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Quantum Hall effect in InAsSb quantum wells at elevated temperatures
Authors:
M. E. Bal,
E. Cheah,
Z. Lei,
R. Schott,
C. A. Lehner,
H. Engelkamp,
W. Wegscheider,
U. Zeitler
Abstract:
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb…
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We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective $g$-factor was determined to be $g^{\ast} \approx$ 21.9. These results are also corroborated by $k \cdot p$ band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the $g$-factor is significantly enhanced by electron-electron interactions, reaching a value as large as $g^{\ast}$ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.
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Submitted 15 December, 2023;
originally announced December 2023.
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Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction
Authors:
M. Coraiola,
A. E. Svetogorov,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and…
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We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and sign - as a function of magnetic fluxes and gate voltages. Our observations are supported by a circuit model of three parallel Josephson junctions with non-sinusoidal current-phase relation. With respect to conventional Josephson interferometers, phase-tunable multiterminal Josephson junctions enable large diode efficiencies in structurally symmetric devices, where local magnetic fluxes break both time-reversal and spatial-inversion symmetries. Our work establishes a pathway to develop Josephson diodes with wide-range tunability and that do not rely on exotic materials or externally applied magnetic fields.
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Submitted 11 December, 2023; v1 submitted 7 December, 2023;
originally announced December 2023.
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Flip-chip-based fast inductive parity readout of a planar superconducting island
Authors:
M. Hinderling,
S. C. ten Kate,
D. Z. Haxell,
M. Coraiola,
S. Paredes,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
D. Sabonis,
F. Nichele
Abstract:
Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time par…
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Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time parity measurement in a superconducting island embedded in a superconducting loop and realized in a hybrid two-dimensional heterostructure using a microwave resonator. Device and readout resonator are located on separate chips, connected via flip-chip bonding, and couple inductively through vacuum. The superconducting resonator detects the parity-dependent circuit inductance, allowing for fast and non-destructive parity readout. We resolved even and odd parity states with signal-to-noise ratio SNR $\approx3$ with an integration time of $20~μ$s and detection fidelity exceeding 98%. Real-time parity measurement showed state lifetime extending into millisecond range. Our approach will lead to better understanding of coherence-limiting mechanisms in superconducting quantum hardware and provide novel readout schemes for hybrid qubits.
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Submitted 13 July, 2023;
originally announced July 2023.
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Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hy…
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Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hybrid three-terminal Josephson junction. Andreev bands reveal spin-degeneracy breaking, with level splitting in excess of 9 GHz, and zero-energy crossings associated to ground state fermion parity transitions, in agreement with theoretical predictions. Both effects occur without the need of external magnetic fields or sizable charging energies and are tuned locally by controlling superconducting phase differences. Our results highlight the potential of multiterminal hybrid devices for engineering quantum states.
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Submitted 13 July, 2023;
originally announced July 2023.
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Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe…
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We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to ${\varphi_{0}=0.5π}$ which are consistent with a Zeeman field coupling to highly-transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit and orbital effects in InAs/Al JJs, giving new understanding to phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.
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Submitted 5 June, 2023; v1 submitted 2 June, 2023;
originally announced June 2023.
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Demonstration of nonlocal Josephson effect in Andreev molecules
Authors:
D. Z. Haxell,
M. Coraiola,
M. Hinderling,
S. C. ten Kate,
D. Sabonis,
A. E. Svetogorov,
W. Belzig,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the impl…
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We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the implementation of a $\varphi_0$-junction which is tunable both electrostatically and magnetically. The anomalous phase shift was larger for shorter distances between the JJs and vanished for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of ABSs, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source, and could enable new coupling schemes for hybrid quantum devices.
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Submitted 4 July, 2023; v1 submitted 1 June, 2023;
originally announced June 2023.
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Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Authors:
Clemens Todt,
Sjoerd Telkamp,
Filip Krizek,
Christian Reichl,
Mihai Gabureac,
Rüdiger Schott,
Erik Cheah,
Peng Zeng,
Thomas Weber,
Arnold Müller,
Christof Vockenhuber,
Mohsen Bahrami Panah,
Werner Wegscheider
Abstract:
We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber…
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We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.
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Submitted 18 April, 2023; v1 submitted 17 April, 2023;
originally announced April 2023.
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Phase-engineering the Andreev band structure of a three-terminal Josephson junction
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
H. Weisbrich,
A. E. Svetogorov,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure.…
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In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure. The three terminals are connected to form two loops, enabling independent control over two phase differences and access to a synthetic Andreev band structure in the two-dimensional phase space. Our results demonstrate a phase-controlled Andreev molecule, originating from two discrete Andreev levels that spatially overlap and hybridise. Signatures of hybridisation are observed in the form of avoided crossings in the spectrum and band structure anisotropies in the phase space, all explained by a numerical model. Future extensions of this work could focus on addressing spin-resolved energy levels, ground state fermion parity transitions and Weyl bands in multiterminal geometries.
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Submitted 11 December, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Authors:
E. Cheah,
D. Z. Haxell,
R. Schott,
P. Zeng,
E. Paysen,
S. C. ten Kate,
M. Coraiola,
M. Landstetter,
A. B. Zadeh,
A. Trampert,
M. Sousa,
H. Riel,
F. Nichele,
W. Wegscheider,
F. Krizek
Abstract:
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a…
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In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system.
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Submitted 17 January, 2023;
originally announced January 2023.
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Flip-chip-based microwave spectroscopy of Andreev bound states in a planar Josephson junction
Authors:
M. Hinderling,
D. Sabonis,
S. Paredes,
D. Z. Haxell,
M. Coraiola,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modul…
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We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modulation of supercurrent in the junction. Two-tone spectroscopy measurements revealed an isolated Andreev bound state consistent with an average induced superconducting gap of $184~\mathrm{μeV}$ and a gate-tunable transmission approaching $0.98$. Our results represent the feasibility of using the flip-chip technique to address and study Andreev bound states in planar Josephson junctions, and they give a promising path towards microwave applications with superconductor-semiconductor two-dimensional materials.
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Submitted 17 January, 2023; v1 submitted 21 December, 2022;
originally announced December 2022.
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Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
W. Belzig,
J. C. Cuevas,
F. Nichele
Abstract:
Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of condu…
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Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of conductance features as evidence of steady Floquet-Andreev states. Here we realise a similar device in a hybrid superconducting-semiconducting heterostructure, which utilises a tunnelling probe with gate-tunable transparency and allows simultaneous measurements of Andreev spectrum and current-phase relation of the planar Josephson junction. We show that, in our devices, spectral replicas in sub-gap conductance emerging under microwave irradiation are caused by photon assisted tunnelling of electrons into Andreev states. The current-phase relation under microwave irradiation is also explained by the interaction of Andreev states with microwave photons, without the need to invoke Floquet states. The techniques outlined in this study establish a baseline to distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices, a crucial development towards understanding light-matter coupling in hybrid nanostructures.
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Submitted 16 June, 2023; v1 submitted 7 December, 2022;
originally announced December 2022.
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Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
Authors:
Zi** Lei,
Erik Cheah,
Filip Krizek,
Rüdiger Schott,
Thomas Bähler,
Peter Märki,
Werner Wegscheider,
Mansour Shayegan,
Thomas Ihn,
Klaus Ensslin
Abstract:
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependenc…
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Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.
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Submitted 22 August, 2022;
originally announced August 2022.
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Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs
Authors:
D. Z. Haxell,
E. Cheah,
F. Křížek,
R. Schott,
M. F. Ritter,
M. Hinderling,
W. Belzig,
C. Bruder,
W. Wegscheider,
H. Riel,
F. Nichele
Abstract:
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature…
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We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature $T^{*}$ is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate dam**, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, $T^*$ is also tuned by a magnetic flux.
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Submitted 21 November, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells
Authors:
Zi** Lei,
Erik Cheah,
Km Rubi,
Maurice E. Bal,
Christoph Adam,
Rüdiger Schott,
Uli Zeitler,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation do**, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit intera…
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We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation do**, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at filling factor $ν$ = 2 for tilt angles where the Landau level energy equals the Zeeman energy. Despite the high mobility, the undoped InSb quantum wells exhibit no fractional quantum Hall effect up to magnetic fields of 25 T.
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Submitted 21 October, 2021;
originally announced October 2021.
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Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas
Authors:
Zi** Lei,
Christian A. Lehner,
Erik Cheah,
Christopher Mittag,
Matija Karalic,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor…
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We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{\parallel}^* | \approx$ 40. The out-of-plane g factor is measured to be $|g_{\perp}^* | \approx$ 50, which is close to the g factor in the bulk.
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Submitted 13 April, 2021; v1 submitted 5 November, 2020;
originally announced November 2020.
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Electronic g-factor and Magneto-transport in InSb Quantum Wells
Authors:
Zi** Lei,
Christian A. Lehner,
Km Rubi,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Peter Märki,
Uli Zeitler,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of…
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High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
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Submitted 10 February, 2020;
originally announced February 2020.
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Quantum transport in high-quality shallow InSb quantum wells
Authors:
Zi** Lei,
Christian A. Lehner,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells clo…
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InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-do** and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $\rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor.
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Submitted 25 June, 2019; v1 submitted 1 April, 2019;
originally announced April 2019.
