Showing 1–50 of 100 results for author: Chaves, A

Ultrasensitive acoustic graphene plasmons in a graphene-transition metal dichalcogenide heterostructure: strong plasmon-phonon coupling and wavelength sensitivity enhanced by a metal screen

Authors: Ícaro R. Lavora, Z. H. Tao, H. M. Dongd, Andrey Chaves, F. M. Peeters, Milorad V. Milosevic

Abstract: Acoustic plasmons in graphene exhibit strong confinement induced by a proximate metal surface and hybridize with phonons of transition metal dichalcogenides (TMDs) when these materials are combined in a van der Waals heterostructure, thus forming screened graphene plasmon-phonon polaritons (SGPPPs), a type of acoustic mode. While SGPPPs are shown to be very sensitive to the dielectric properties o… ▽ More Acoustic plasmons in graphene exhibit strong confinement induced by a proximate metal surface and hybridize with phonons of transition metal dichalcogenides (TMDs) when these materials are combined in a van der Waals heterostructure, thus forming screened graphene plasmon-phonon polaritons (SGPPPs), a type of acoustic mode. While SGPPPs are shown to be very sensitive to the dielectric properties of the environment, enhancing the SGPPPs coupling strength in realistic heterostructures is still challenging. Here we employ the quantum electrostatic heterostructure model, which builds upon the density functional theory calculations for monolayers, to show that the use of a metal as a substrate for graphene-TMD heterostructures (i) vigorously enhances the coupling strength between acoustic plasmons and the TMD phonons, and (ii) markedly improves the sensitivity of the plasmon wavelength on the structural details of the host platform in real space, thus allowing one to use the effect of environmental screening on acoustic plasmons to probe the structure and composition of a van der Waals heterostructure down to the monolayer resolution. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Comments: 21 pages, 7 figures

Non-Invasive Readout of the Kinetic Inductance of Superconducting Nanostructures

Authors: Lukas Nulens, Davi A. D. Chaves, Omar J. Y. Harb, Jeroen E. Scheerder, Nicolas Lejeune, Kamal Brahim, Bart Raes, Alejandro V. Silhanek, Margriet J. Van Bael, Joris Van de Vondel

Abstract: The energy landscape of multiply connected superconducting structures is ruled by fluxoid quantization due to the implied single-valuedness of the complex wave function. The transitions and interaction between these energy states, each defined by a specific phase winding number, are governed by classical and/or quantum phase slips. Understanding these events requires the ability to probe, non-inva… ▽ More The energy landscape of multiply connected superconducting structures is ruled by fluxoid quantization due to the implied single-valuedness of the complex wave function. The transitions and interaction between these energy states, each defined by a specific phase winding number, are governed by classical and/or quantum phase slips. Understanding these events requires the ability to probe, non-invasively, the state of the ring. Here, we employ a niobium resonator to examine the superconducting properties of an aluminum loop. By applying a magnetic field, adjusting temperature, and altering the loop's dimensions via focused ion beam milling, we correlate resonance frequency shifts with changes in the loop's kinetic inductance. This parameter is a unique indicator of the superconducting condensate's state, facilitating the detection of phase slips in nanodevices and providing insights into their dynamics. Our method presents a proof-of-principle spectroscopic technique with promising potential for investigating the Cooper pair density in inductively coupled superconducting nanostructures. △ Less

Submitted 20 May, 2024; originally announced May 2024.

Valley-selective confinement of excitons in transition metal dichalcogenides with inhomogeneous magnetic fields

Authors: A. J. Chaves, D. R. da Costa, F. M. Peeters, Nuno M. R. Peres

Abstract: Magnetized ferromagnetic disks or wires support strong inhomogeneous fields in their borders. Such magnetic fields create an effective potential, due to Zeeman and diamagnetic contributions, that can localize charge carriers. For the case of two-dimensional transition metal dichalcogenides, this potential can valley-localize excitons due to the Zeeman term, which breaks the valley symmetry. We sho… ▽ More Magnetized ferromagnetic disks or wires support strong inhomogeneous fields in their borders. Such magnetic fields create an effective potential, due to Zeeman and diamagnetic contributions, that can localize charge carriers. For the case of two-dimensional transition metal dichalcogenides, this potential can valley-localize excitons due to the Zeeman term, which breaks the valley symmetry. We show that the diamagnetic term is negligible when compared to the Zeeman term for monolayers of transition metal dichalcogenides. The latter is responsible for trap** excitons near the magnetized structure border with valley-dependent characteristics, in which, for one of the valleys, the exciton is confined inside the disk, while for the other, it is outside. This spatial valley separation of exciton can be probed by circularly polarized light, and moreover, we show that the inhomogeneous magnetic field magnitude, the dielectric environment, and the magnetized structure parameters can tailor the spatial separation of the exciton wavefunctions. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Comments: 10 pages, 5 figures

Moiré excitons in biased twisted bilayer graphene under pressure

Authors: V. G. M. Duarte, D. R. da Costa, N. M. R. Peres, L. K. Teles, A. J. Chaves

Abstract: Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing… ▽ More Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers. △ Less

Submitted 14 October, 2023; originally announced October 2023.

Comments: 6 pages, 3 figures, supplemental material available from the authors

Using quantitative magneto-optical imaging to reveal why the ac susceptibility of superconducting films is history-independent

Authors: Davi A. D. Chaves, J. C. Corsaletti Filho, E. A. Abbey, D. Bosworth, Z. H. Barber, M. G. Blamire, T. H. Johansen, A. V. Silhanek, W. A. Ortiz, M. Motta

Abstract: Measurements of the temperature-dependent ac magnetic susceptibility of superconducting films reveal reversible responses, i.e., irrespective of the magnetic and thermal history of the sample. This experimental fact is observed even in the presence of stochastic and certainly irreversible magnetic flux avalanches which, in principle, should randomly affect the results. In this work, we explain suc… ▽ More Measurements of the temperature-dependent ac magnetic susceptibility of superconducting films reveal reversible responses, i.e., irrespective of the magnetic and thermal history of the sample. This experimental fact is observed even in the presence of stochastic and certainly irreversible magnetic flux avalanches which, in principle, should randomly affect the results. In this work, we explain such an apparent contradiction by exploring the spatial resolution of magneto-optical imaging. To achieve this, we successfully compare standard frequency-independent first harmonic ac magnetic susceptibility results for a superconducting thin film with those obtained by ac-emulating magneto-optical imaging (acMOI). A quantitative analysis also provides information regarding flux avalanches, reveals the presence of a vortex-antivortex annihilation zone in the region in which a smooth flux front interacts with pre-established avalanches, and demonstrates that the major impact on the flux distribution within the superconductor happens during the first ac cycle. Our results establish acMOI as a reliable approach for studying frequency-independent ac field effects in superconducting thin films while capturing local aspects of flux dynamics, otherwise inaccessible via global magnetometry techniques. △ Less

Submitted 14 September, 2023; originally announced September 2023.

Comments: 15 pages, 10 figures

Computational prediction of high thermoelectric performance in As$_{2}$Se$_{3}$ by engineering out-of-equilibrium defects

Authors: Anderson S. Chaves, Murilo Aguiar Silva, Alex Antonelli

Abstract: We employed first-principles calculations to investigate the thermoelectric transport properties of the compound As$_2$Se$_3$. Early experiments and calculations have indicated that these properties are controlled by a kind of native defect called antisites. Our calculations using the linearized Boltzmann transport equation within the relaxation time approximation show good agreement with the expe… ▽ More We employed first-principles calculations to investigate the thermoelectric transport properties of the compound As$_2$Se$_3$. Early experiments and calculations have indicated that these properties are controlled by a kind of native defect called antisites. Our calculations using the linearized Boltzmann transport equation within the relaxation time approximation show good agreement with the experiments for defect concentrations of the order of 10$^{19}$ cm$^{-3}$. Based on our total energy calculations, we estimated the equilibrium concentration of antisite defects to be about 10$^{14}$ cm$^{-3}$. These results suggest that the large concentration of defects in the experiments is due to kinetic and/or off-stoichiometry effects and in principle it could be lowered, yielding relaxation times similar to those found in other chalcogenide compounds. In this case, for relaxation time higher than 10 fs, we obtained high thermoelectric figures of merit of 3 for the p-type material and 2 for the n-type one. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Comments: 8 pages, 5 figures, regular article

Magnetic field-induced weak-to-strong-link transformation in patterned superconducting films

Authors: D. A. D. Chaves, M. I. Valerio-Cuadros, L. Jiang, E. A. Abbey, F. Colauto, A. A. M. Oliveira, A. M. H. Andrade, L. B. L. G. Pinheiro, T. H. Johansen, C. Xue, Y. -H. Zhou, A. V. Silhanek, W. A. Ortiz, M. Motta

Abstract: Ubiquitous in most superconducting materials and a common result of nanofabrication processes, weak-links are known for their limiting effects on the transport of electric currents. Still, they are at the root of key features of superconducting technology. By performing quantitative magneto-optical imaging experiments and thermomagnetic model simulations, we correlate the existence of local maxima… ▽ More Ubiquitous in most superconducting materials and a common result of nanofabrication processes, weak-links are known for their limiting effects on the transport of electric currents. Still, they are at the root of key features of superconducting technology. By performing quantitative magneto-optical imaging experiments and thermomagnetic model simulations, we correlate the existence of local maxima in the magnetization loops of FIB-patterned Nb films to a magnetic field-induced weak-to-strong-link transformation increasing their critical current. This phenomenon arises from the nanoscale interaction between quantized magnetic flux lines and FIB-induced modifications of the device microstructure. Under an ac drive field, this leads to a rectified vortex motion along the weak-link. The reported tunable effect can be exploited in the development of new superconducting electronic devices, such as flux pumps and valves, to attenuate or amplify the supercurrent through a circuit element, and as a strategy to enhance the critical current in weak-link-bearing devices. △ Less

Submitted 9 October, 2023; v1 submitted 7 May, 2023; originally announced May 2023.

Comments: 11 pages and 8 figures

Tunable properties of excitons in double monolayer semiconductor heterostructures

Authors: Luiz G. M. Tenório, Teldo A. S. Pereira, K. Mohseni, T. Frederico, M. R. Hadizadeh, Diego R. da Costa, André J. Chaves

Abstract: We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a co… ▽ More We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a continuum model. We systematically investigated hetero double-layer systems for TMDs with chemical compounds MX2, showing the dependence of the inter- and intralayer excitons binding energies as a function of the spacer width and the dielectric constant. Moreover, we discussed how the exciton energy and its wave function, which includes the effects of the changing bandgap, depend on the geometric system setup. △ Less

Submitted 5 May, 2023; originally announced May 2023.

Comments: 13 pages, 10 figures

Flattening conduction and valence bands for interlayer excitons in a moiré MoS$_2$/WSe$_2$ heterobilayer

Authors: Sara Conti, Andrey Chaves, Tribhuwan Pandey, Lucian Covaci, François M. Peeters, David Neilson, Milorad V. Milošević

Abstract: We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moi… ▽ More We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moiré potential is too weak to produce significant flattening. Moreover, we draw attention to the fact that the quasi-particle effective masses around the $Γ$-point and the band flattening are \textit{reduced} with twisting. As an alternative approach, we show (i) that reducing the interlayer distance by uniform vertical pressure can significantly increase the effective mass of the moiré hole, and (ii) that the moiré depth and its band flattening effects are strongly enhanced by accessible electric gating fields perpendicular to the heterobilayer, with resulting electron and hole effective masses increased by more than an order of magnitude leading to record-flat bands. These findings impose boundaries on the commonly generalized benefits of moiré twistronics, while also revealing alternate feasible routes to achieve truly flat electron and hole bands to carry us to strongly correlated excitonic phenomena on demand. △ Less

Submitted 14 March, 2023; originally announced March 2023.

Journal ref: Nanoscale, 2023,15, 14032-14042

Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics

Authors: Ferney A. Chaves, Anibal Pacheco-Sanchez, David Jimenez

Abstract: The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic do** by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielec… ▽ More The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic do** by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielectric and the 2D semiconductor are obtained for both the symmetrical and asymmetrical cases. In contrast to the case of devices with chemical do**, the obtained depletion width model of devices with electrostatic do** do not depend on the dielectric constant but only on the electrostatic potential and oxide thickness. The models describe the electrostatics of gate-tunable 2D pn junctions at arbitrary bias. A benchmark against numerical device simulations of MoS2-based pn junctions validate the analytical models. △ Less

Submitted 30 January, 2023; originally announced February 2023.

Journal ref: IEEE Transactions on Nanotechnology, 2023

Semiclassical Electron and Phonon Transport from First Principles: Application to Layered Thermoelectrics

Authors: Anderson S. Chaves, Michele Pizzochero, Daniel T. Larson, Alex Antonelli, Efthimios Kaxiras

Abstract: Thermoelectrics are a promising class of materials for renewable energy owing to their capability to generate electricity from waste heat, with their performance being governed by a competition between charge and thermal transport. A detailed understanding of energy transport at the nanoscale is thus of paramount importance for develo** efficient thermoelectrics. Here, we provide a comprehensive… ▽ More Thermoelectrics are a promising class of materials for renewable energy owing to their capability to generate electricity from waste heat, with their performance being governed by a competition between charge and thermal transport. A detailed understanding of energy transport at the nanoscale is thus of paramount importance for develo** efficient thermoelectrics. Here, we provide a comprehensive overview of the methodologies adopted for the computational design and optimization of thermoelectric materials from first-principles calculations. First, we introduce density-functional theory, the fundamental tool to describe the electronic and vibrational properties of solids. Next, we review charge and thermal transport in the semiclassical framework of the Boltzmann transport equation, with a particular emphasis on the various scattering mechanisms between phonons, electrons, and impurities. Finally, we illustrate how these approaches can be deployed in determining the figure of merit of tin and germanium selenides, an emerging family of layered thermoelectrics that exhibits a promising figure of merit. Overall, this review article offers practical guidelines to achieve an accurate assessment of the thermoelectric properties of materials by means of computer simulations. △ Less

Submitted 31 May, 2023; v1 submitted 31 January, 2023; originally announced February 2023.

Comments: 64 pages, 7 figures, revised version

Trion clustering structure and binding energy in 2D semiconductor materials: Faddeev equations approach

Authors: K. Mohseni, M. R. Hadizadeh, T. Frederico, D. R. da Costa, A. J. Chaves

Abstract: In this work, we develop the basic formalism to study trions in semiconductor layered materials using the Faddeev equations in momentum space for three different particles lying in two dimensions. We solve the trion Faddeev coupled integral equations for both short-range one-term separable Yamaguchi potential and Rytova-Keldysh (RK) interaction applied to the MoS$_2$ layer. We devise two distinct… ▽ More In this work, we develop the basic formalism to study trions in semiconductor layered materials using the Faddeev equations in momentum space for three different particles lying in two dimensions. We solve the trion Faddeev coupled integral equations for both short-range one-term separable Yamaguchi potential and Rytova-Keldysh (RK) interaction applied to the MoS$_2$ layer. We devise two distinct regularization methods to overcome the challenge posed by the repulsive electron-electron RK potential in the numerical solution of the Faddeev equations in momentum space. The first method regulates the repulsive interaction in the infrared region, while the second regulates it in the ultraviolet region. By extrapolating the trion energy to the situation without screening, the two methods gave consistent results for the MoS$_2$ layer with a trion binding energy of $-49.5(1)$~meV for the exciton energy of $-753.3$~meV. We analyzed the trion structure for the RK and Yamaguchi potentials in detail, showing their overall similarities and the dominant cluster structure, where the strongly bound exciton is weakly bound to an electron. We found that this property is manifested in the dominance of two of the Faddeev components over the one where the hole is a spectator of the interacting electron pair. △ Less

Submitted 21 March, 2023; v1 submitted 19 December, 2022; originally announced December 2022.

Comments: 16 pages, 11 figues, 8 tables

Journal ref: Phys. Rev. B 107, 165427 (2023)

Nanobridge SQUIDs as multilevel memory elements

Authors: Davi A. D. Chaves, Lukas Nulens, Heleen Dausy, Bart Raes, Donghua Yue, Wilson A. Ortiz, Maycon Motta, Margriet J. Van Bael, Joris Van de Vondel

Abstract: With the development of novel computing schemes working at cryogenic temperatures, superconducting memory elements have become essential. In this context, superconducting quantum interference devices (SQUIDs) are promising candidates, as they may trap different discrete amounts of magnetic flux. We demonstrate that a field-assisted writing scheme allows such a device to operate as a multilevel mem… ▽ More With the development of novel computing schemes working at cryogenic temperatures, superconducting memory elements have become essential. In this context, superconducting quantum interference devices (SQUIDs) are promising candidates, as they may trap different discrete amounts of magnetic flux. We demonstrate that a field-assisted writing scheme allows such a device to operate as a multilevel memory by the readout of eight distinct vorticity states at zero magnetic field. We present an alternative mechanism based on single phase slips which allows to switch the vorticity state while preserving superconductivity. This mechanism provides a possibly deterministic channel for flux control in SQUID-based memories, under the condition that the field-dependent energy of different vorticity states are nearby. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Magnetic flux penetration in nanoscale wedge-shaped superconducting thin films

Authors: L. B. L. G. Pinheiro, L. Jiang, E. A. Abbey, Davi A. D. Chaves, A. J. Chiquito, T. H. Johansen, J. Van de Vondel, C. Xue, Y. -H. Zhou, A. V. Silhanek, W. A. Ortiz, M. Motta

Abstract: Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the gradual change of film composition. This work deals with superconducting Pb thin films with a thickness gradient prepared with the aid of a diffuse stencil mask… ▽ More Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the gradual change of film composition. This work deals with superconducting Pb thin films with a thickness gradient prepared with the aid of a diffuse stencil mask. Atomic Force Microscopy and Energy-Dispersive X-ray Spectroscopy show variations ranging from 90~nm to 154~nm. Quantitative magneto-optical images reveal interesting features during both the abrupt and the smooth penetration regimes of magnetic flux, as well as the thickness-dependent critical current density ($J_c$). In addition, we observe a gradual superconducting transition as the upper critical field is progressively reached for certain thicknesses. Furthermore, the hysteresis observed for triggering flux avalanches when increasing and decreasing magnetic fields is also accounted for by the $J_c$ profile evolution along the thickness gradient. Numerical simulations based on the Thermomagnetic Model are in fair agreement with the experimental data. These findings demonstrate that wedge-shaped films are a viable approach to investigate, in a continuous fashion, thickness-dependent properties of a superconducting materials. △ Less

Submitted 18 October, 2022; originally announced October 2022.

Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

Authors: Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis, Aníbal Pacheco-Sanchez, Ferney A. Chaves, David Jiménez

Abstract: In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (fr… ▽ More In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Other set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trap**/detrap**-, self-heating-, and non-quasi static-effects, which could have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, we provide a perspective of the challenges during the scale up of the GFET modeling technology towards higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: 61 pages, 18 figures, Supplementary Information 3 pages

Distinctive g-factor of moire-confined excitons in van der Waals heterostructures

Authors: Y. Galvão Gobato, C. Serati de Brito, Andrey Chaves, M. A. Prosnikov, T. Woźniak, Shi Guo, Ingrid D. Barcelos, M. V. Milošević, F. Withers, P. C. M. Christianen

Abstract: We investigated experimentally the valley Zeeman splitting of excitonic peaks in the photoluminescence (PL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures at near-zero twist angles under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the PL spectra: the lower energy one exhibits a reduced g-factor relative to that of the higher energy peak, and much… ▽ More We investigated experimentally the valley Zeeman splitting of excitonic peaks in the photoluminescence (PL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures at near-zero twist angles under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the PL spectra: the lower energy one exhibits a reduced g-factor relative to that of the higher energy peak, and much lower than the recently reported values for interlayer excitons in other van der Waals (vdW) heterostructures. We provide evidence that such a discernible g-factor stems from the spatial confinement of the exciton in the potential landscape created by the moire pattern, due tolattice mismatch and/or inter-layer twist in heterobilayers. This renders magneto-PL an important tool to reach deeper understanding of the effect of moire patterns on excitonic confinement in vdW heterostructures. △ Less

Submitted 4 April, 2022; originally announced April 2022.

Comments: 6 pages, 3 figures. Submitted

Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe

Authors: Anderson S. Chaves, Daniel T. Larson, Efthimios Kaxiras, Alex Antonelli

Abstract: The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic p… ▽ More The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total thermal conductivity, and relatively large band gap. In particular, the out-of-plane direction in GeSe presents equivalent or even higher performance than SnSe for temperatures above 500 K. By extending the analysis to 900 K, we obtained an ultrahigh value for the thermoelectric figure of merit (zT = 3.2) at the optimal hole density of 4x10^19 cm^-3. Our work provides strong motivation for continued experimental work focusing on improving the GeSe do** efficiency in order to achieve this optimal hole density. △ Less

Submitted 12 February, 2022; originally announced February 2022.

Comments: 13 pages, 7 figures

The gate tunable 2D pn junction driven out-of-equilibrium

Authors: Ferney A. Chaves, David Jiménez

Abstract: We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presenc… ▽ More We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presence of interface states. The impact of parameters such as gate capacitance, energy gap and interface trap states density have been considered to model properties such as the depletion width, rectification factor and depletion and diffusion capacitances. The present work opens the door to a wider exploration of potential advantages that gate tunable 2D pn junctions could bring in terms of figures of merit. △ Less

Submitted 21 October, 2021; originally announced October 2021.

Comments: 12 pages, 8 figures

Journal ref: Journal of Applied Physics 130, 174505 (2021)

Prediction of hyperbolic exciton-polaritons in monolayer black phosphorus

Authors: Fanjie Wang, Chong Wang, Andrey Chaves, Chaoyu Song, Guowei Zhang, Shenyang Huang, Yuchen Lei, Qiaoxia Xing, Lei Mu, Yuangang Xie, Hugen Yan

Abstract: Hyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon… ▽ More Hyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon and plasmon resonances respectively. Here, by determining the anisotropic optical conductivity (dielectric function) through optical spectroscopy, we predict that monolayer black phosphorus naturally hosts hyperbolic exciton-polaritons due to the pronounced in-plane anisotropy and strong exciton resonances. We simultaneously observe a strong and sharp ground state exciton peak and weaker excited states in high quality monolayer samples in the reflection spectrum, which enables us to determine the exciton binding energy of ~452 meV. Our work provides another appealing platform for the in-plane natural hyperbolic polaritons, which is based on excitons rather than phonons or plasmons. △ Less

Submitted 26 September, 2021; originally announced September 2021.

Journal ref: Nat. Commun. (2021), 12, 5628

Tunable coupling of terahertz Dirac plasmons and phonons in transition metal dicalchogenide-based van der Waals heterostructures

Authors: I. R. Lavor, Andrey Chaves, F. M. Peeters, B. Van Duppen

Abstract: Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations tha… ▽ More Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations that account for the contribution of each layer of the vdWh separately, we calculate how the strength of plasmon-phonon coupling depends on the number and composition of TMD layers, on the graphene Fermi energy and the specific phonon mode. From this, we present a semiclassical theory that is capable of capturing all relevant characteristics of the SPPPs. We find that it is possible to realize both strong and ultra-strong coupling regimes by tuning graphene's Fermi energy and changing TMD layer number. △ Less

Submitted 14 August, 2021; originally announced August 2021.

Comments: 9 pages, 6 figures

Microscopic origin of the excellent thermoelectric performance in n-doped SnSe

Authors: Anderson S. Chaves, Daniel T. Larson, Efthimios Kaxiras, Alex Antonelli

Abstract: Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present work, by applying extensive first-principles calculations of electron-phonon coupling associate… ▽ More Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present work, by applying extensive first-principles calculations of electron-phonon coupling associated with the calculation of the scattering by ionized impurities, we investigate the reasons behind the superior figure of merit as well as the enhancement of zT above 600 K in n-doped out-of-layer SnSe, as compared to p-doped SnSe with similar carrier densities. For the n-doped case, the relaxation time is dominated by ionized impurity scattering and increases with temperature, a feature that maintains the power factor at high values at higher temperatures and simultaneously causes the carrier thermal conductivity at zero electric current (k_el) to decrease faster for higher temperatures, leading to an ultrahigh-zT = 3.1 at 807 K. We rationalize the roles played by k_el and k^0 (the thermal conductivity due to carrier transport under isoelectrochemical conditions) in the determination of zT. Our results show the ratio between k^0 and the lattice thermal conductivity indeed corresponds to the upper limit for zT, whereas the difference between calculated zT and the upper limit is proportional to k_el. △ Less

Submitted 6 July, 2021; originally announced July 2021.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 104, 115204 (2021)

Zitterbewegung of moiré excitons in twisted MoS$_2$/WSe$_2$ hetero-bilayers

Authors: I. R. Lavor, D. R. da Costa, L. Covaci, M. V. Milošević, F. M. Peeters, A. Chaves

Abstract: The moiré pattern observed in stacked non-commensurate crystal lattices, such as hetero-bilayers of transition metal dichalcogenides, produces a periodic modulation of their bandgap. Excitons subjected to this potential landscape exhibit a band structure that gives rise to a quasi-particle dubbed moiré exciton. In the case of MoS$_2$/WSe$_2$ hetero-bilayers, the moiré trap** potential has honeyc… ▽ More The moiré pattern observed in stacked non-commensurate crystal lattices, such as hetero-bilayers of transition metal dichalcogenides, produces a periodic modulation of their bandgap. Excitons subjected to this potential landscape exhibit a band structure that gives rise to a quasi-particle dubbed moiré exciton. In the case of MoS$_2$/WSe$_2$ hetero-bilayers, the moiré trap** potential has honeycomb symmetry and, consequently, the moiré exciton band structure is the same as that of a Dirac-Weyl fermion, whose mass can be further tuned down to zero with a perpendicularly applied field. Here we show that, analogously to other Dirac-like particles, moiré exciton exhibits a trembling motion, also known as zitterbewegung, whose long timescales are compatible with current experimental techniques for exciton dynamics. This promotes the study of the dynamics of moiré excitons in van der Waals heterostructures as an advantageous solid-state platform to probe zitterbewegung, broadly tunable by gating and inter-layer twist angle. △ Less

Submitted 30 June, 2021; originally announced July 2021.

Comments: https://journals.aps.org/prl/accepted/ea07cYf6O1518a78f1ac7684907511e93e68803ff

Journal ref: Phys. Rev. Lett. 127, 106801 (2021)

Enhancing the effective critical current density in a Nb superconducting thin film by cooling in an inhomogeneous magnetic field

Authors: D. A. D. Chaves, I. M. de Araújo, D. Carmo, F. Colauto, A. A. M. de Oliveira, A. M. H. de Andrade, T. H. Johansen, A. V. Silhanek, W. A. Ortiz, M. Motta

Abstract: Quantitative magneto-optical imaging of a type-II superconductor thin film cooled under zero, homogeneous, and inhomogeneous applied magnetic fields, indicates that the latter procedure leads to an enhancement of the screening capacity. Such an observation is corroborated by both B-independent and B-dependent critical state model analyses. Furthermore, repulsive (attractive) vortex-(anti)vortex in… ▽ More Quantitative magneto-optical imaging of a type-II superconductor thin film cooled under zero, homogeneous, and inhomogeneous applied magnetic fields, indicates that the latter procedure leads to an enhancement of the screening capacity. Such an observation is corroborated by both B-independent and B-dependent critical state model analyses. Furthermore, repulsive (attractive) vortex-(anti)vortex interactions were found to have a decisive role in the shielding ability, with initial states prepared with vortices resulting in a shorter magnetic flux front penetration depth than those prepared with antivortices. The proposed strategy could be implemented to boost the performance of thin superconducting devices. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Comments: 6 pages and 5 figures

Tunable effective masses of magneto-excitons in two-dimensional materials

Authors: Andrey Chaves, F. M. Peeters

Abstract: Excitonic properties of Ge$_2$H$_2$ and Sn$_2$H$_2$, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the ef… ▽ More Excitonic properties of Ge$_2$H$_2$ and Sn$_2$H$_2$, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values. △ Less

Submitted 28 May, 2021; originally announced May 2021.

Journal ref: Solid State Communications 334-335, 114371 (2021)

Signatures of sub-band excitons in few-layer black phosphorus

Authors: A. Chaves, G. O. Sousa, K. Khaliji, D. R. da Costa, G. A. Farias, Tony Low

Abstract: Recent experimental measurements of light absorption in few-layer black phosphorus (BP) reveal a series of high and sharp peaks, interspersed by pairs of lower and broader features. Here, we propose a theoretical model for these excitonic states in few-layer black phosphorus (BP) within a continuum approach for the in-plane degrees of freedom and a tight-binding approximation that accounts for int… ▽ More Recent experimental measurements of light absorption in few-layer black phosphorus (BP) reveal a series of high and sharp peaks, interspersed by pairs of lower and broader features. Here, we propose a theoretical model for these excitonic states in few-layer black phosphorus (BP) within a continuum approach for the in-plane degrees of freedom and a tight-binding approximation that accounts for inter-layer couplings. This yields excitonic transitions between different combinations of the sub-bands created by the coupled BP layers, which leads to a series of high and low oscillator strength excitonic states, consistent with the experimentally observed bright and dark exciton peaks, respectively. The main characteristics of such sub-band exciton states, as well as the possibility to control their energies and oscillator strengths via applied electric and magnetic fields, are discussed, towards a full understanding of the excitonic spectrum of few-layer BP and its tunability. △ Less

Submitted 27 April, 2021; originally announced April 2021.

Comments: to appear in Phys. Rev. B

Stark shift of excitons and trions in two-dimensional materials

Authors: L. S. R. Cavalcante, D. R. da Costa, G. A. Farias, D. R. Reichman, A. Chaves

Abstract: The effect of an external in-plane electric field on neutral and charged exciton states in two-dimensional (2D) materials is theoretically investigated. These states are argued to be strongly bound, so that electron-hole dissociation is not observed up to high electric field intensities. Trions in the anisotropic case of monolayer phosphorene are demonstrated to especially robust under electric fi… ▽ More The effect of an external in-plane electric field on neutral and charged exciton states in two-dimensional (2D) materials is theoretically investigated. These states are argued to be strongly bound, so that electron-hole dissociation is not observed up to high electric field intensities. Trions in the anisotropic case of monolayer phosphorene are demonstrated to especially robust under electric fields, so that fields as high as 100 kV/cm yield no significant effect on the trion binding energy or probability density distribution. Polarizabilities of excitons are obtained from the parabolicity of numerically calculated Stark shifts. For trions, a fourth order Stark shift is observed, which enables the experimental verification of hyperpolarizability in 2D materials, as observed in the highly excited states of the Rydberg series of atoms and ions. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Comments: 7 pages, 4 figures, 3 tables

Journal ref: Phys. Rev. B 98, 245309, 2018

Boosting quantum yields in 2D semiconductors via proximal metal plates

Authors: Yongjun Lee, Anshuman Kumar, Johnathas D'arf Severo Forte, Andrey Chaves, Shrawan Roy, Takashi Taniguchi, Kenji Watanabe, Alexey Chernikov, Joon I. Jang, Tony Low, Jeongyong Kim

Abstract: Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of mat… ▽ More Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton dipolar field interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed inside the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A semiclassical model accounting for the screening of the dipole-dipole interaction qualitatively captures the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters. △ Less

Submitted 30 December, 2020; originally announced December 2020.

Probing the structure and composition of van der Waals heterostructures using the nonlocality of Dirac plasmons in the terahertz regime

Authors: I. R. Lavor, L. S. R. Cavalcante, Andrey Chaves, F. M. Peeters, B. Van Duppen

Abstract: Dirac plasmons in graphene are very sensitive to the dielectric properties of the environment. We show that this can be used to probe the structure and composition of van der Waals heterostructures (vdWh) put underneath a single graphene layer. In order to do so, we assess vdWh composed of hexagonal boron nitride and different types of transition metal dichalcogenides (TMDs). By performing realist… ▽ More Dirac plasmons in graphene are very sensitive to the dielectric properties of the environment. We show that this can be used to probe the structure and composition of van der Waals heterostructures (vdWh) put underneath a single graphene layer. In order to do so, we assess vdWh composed of hexagonal boron nitride and different types of transition metal dichalcogenides (TMDs). By performing realistic simulations that account for the contribution of each layer of the vdWh separately and including the importance of the substrate phonons, we show that one can achieve single-layer resolution by investigating the nonlocal nature of the Dirac plasmon-polaritons. The composition of the vdWh stack can be inferred from the plasmon-phonon coupling once it is composed by more than two TMD layers. Furthermore, we show that the bulk character of TMD stacks for plasmonic screening properties in the terahertz regime is reached only beyond 100 layers. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: 12 pages, 7 figures

Optimum heat treatment to enhance the weak-linkresponse of Y123 nanowires prepared by SolutionBlow Spinning

Authors: Ana M. Caffer, Davi A. D. Chaves, Alexsander L. Pessoa, Claudio L. Carvalho, Wilson A. Ortiz, Rafael Zadorosny, Maycon Motta

Abstract: Although the production of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (Y123) has been extensively reported, there is still a lack of information on the ideal heat treatment to produce this material in the form of one dimension nanostructures. Thus, by means of the Solution Blow Spinning technique, metals embedded in polymer fibers were prepared. These polymer composite fibers were fired and then investigated by t… ▽ More Although the production of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (Y123) has been extensively reported, there is still a lack of information on the ideal heat treatment to produce this material in the form of one dimension nanostructures. Thus, by means of the Solution Blow Spinning technique, metals embedded in polymer fibers were prepared. These polymer composite fibers were fired and then investigated by thermogravimetric analysis. The maximum sintering temperatures of heat treatment were chosen in the interval \SI{850}{\celsius}-\SI{925}{\celsius} for one hour under oxygen flux. SEM images allowed us to determine the wire diameter as approximately 350~nm for all samples, as well as to map the evolution of the entangled wire morphology with the sintering temperature. XRD analysis indicated the presence of Y123 and secondary phases in all samples. Ac magnetic susceptibility and dc magnetization measurements demonstrated that the sample sintered at \SI{925}{\celsius}/1h is the one with the highest weak-link critical temperature and the largest diamagnetic response. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: 13 pages, 6 figures, 2 tables

Journal ref: Supercond. Sci. Technol. 34 (2021) 025009 (8pp)

Wave-packet scattering at a normal-superconductor interface in two-dimensional materials: a generalized theoretical approach

Authors: F. J. A. Linard, V. N. Moura, L. Covaci, M. V. Milošević, A. Chaves

Abstract: A wave-packet time evolution method, based on the split-operator technique, is developed to investigate the scattering of quasi-particles at a normal-superconductor interface of arbitrary profile and shape. As a practical application, we consider a system where low energy electrons can be described as Dirac particles, which is the case for most two-dimensional materials, such as graphene and trans… ▽ More A wave-packet time evolution method, based on the split-operator technique, is developed to investigate the scattering of quasi-particles at a normal-superconductor interface of arbitrary profile and shape. As a practical application, we consider a system where low energy electrons can be described as Dirac particles, which is the case for most two-dimensional materials, such as graphene and transition metal dichalcogenides. However the method is easily adapted for other cases such as electrons in few layer black phosphorus, or any Schrödinger quasi-particles within the effective mass approximation in semiconductors. We employ the method to revisit Andreev reflection in graphene, where specular and retro reflection cases are observed for electrons scattered by a step-like superconducting region. The effect of opening a zero-gap channel across the superconducting region on the electron and hole scattering is also addressed, as an example of the versatility of the technique proposed here. △ Less

Submitted 16 September, 2020; originally announced September 2020.

Electronic and transport properties of anisotropic semiconductor quantum wires

Authors: S. M. Cunha, D. R. da Costa, L. C. Felix, Andrey Chaves, J. Milton Pereira Jr

Abstract: Within the effective-mass approximation, we theoretically investigated the electronic and transport properties of 2D semiconductor quantum wires (QWs) with anisotropic effective masses and different orientations with respect to the anisotropic axis. The energy levels in the absence and presence of an external magnetic field are analytically calculated, showing: (i) a strong dependence on the spaci… ▽ More Within the effective-mass approximation, we theoretically investigated the electronic and transport properties of 2D semiconductor quantum wires (QWs) with anisotropic effective masses and different orientations with respect to the anisotropic axis. The energy levels in the absence and presence of an external magnetic field are analytically calculated, showing: (i) a strong dependence on the spacing of energy levels related to the alignment QW angle and the anisotropy axis; and (ii) for non-null magnetic field, the quantum Hall edge states are significantly affected by the edge orientation. Moreover, by means of the split-operator technique, we analyzed the time evolution of wavepackets in straight and V-shaped anisotropic QWs and compared the transmission probabilities with those of isotropic systems. In the anisotropic case we found damped oscillations in the average values of velocity in both x and y directions for a symmetric Gaussian wavepacket propagating along a straight wide QW, with the oscillation being more evident as the non-collinearity between the group velocity and momentum vectors increases. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Comments: 12 pages, 11 figures

Boosting the efficiency of ab initio electron-phonon coupling calculations through dual interpolation

Authors: Anderson S. Chaves, Alex Antonelli, Daniel T. Larson, Efthimios Kaxiras

Abstract: The coupling between electrons and phonons in solids plays a central role in describing many phenomena, including superconductivity and thermoelecric transport. Calculations of this coupling are exceedingly demanding as they necessitate integrations over both the electron and phonon momenta, both of which span the Brillouin zone of the crystal, independently. We present here an ab initio method fo… ▽ More The coupling between electrons and phonons in solids plays a central role in describing many phenomena, including superconductivity and thermoelecric transport. Calculations of this coupling are exceedingly demanding as they necessitate integrations over both the electron and phonon momenta, both of which span the Brillouin zone of the crystal, independently. We present here an ab initio method for efficiently calculating electron-phonon mediated transport properties by dramatically accelerating the computation of the double integrals with a dual interpolation technique that combines maximally localized Wannier functions with symmetry-adapted plane waves. The performance gain in relation to the current state-of-the-art Wannier-Fourier interpolation is approximately 2n_s \times M, where n_s is the number of crystal symmetry operations and M, a number in the range 5 - 60, governs the expansion in star functions. We demonstrate with several examples how our method performs some ab initio calculations involving electron-phonon interactions. △ Less

Submitted 10 July, 2020; v1 submitted 30 June, 2020; originally announced June 2020.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 102, 125116 (2020)

Investigating charge carrier scattering processes in anisotropic semiconductors through first-principles calculations: The case of p-type SnSe

Authors: Anderson S. Chaves, Robert Luis González-Romero, Juan J. Meléndez, Alex Antonelli

Abstract: Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually… ▽ More Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually does not hold for real materials. Here, we extended the implementation of the BoltzTraP code by incorporating realistic k-dependent RT models of the temperature dependence of the main scattering processes, namely, screened polar and nonpolar scattering by optical phonons, scattering by acoustic phonons, and scattering by ionized impurities with screening. Our RT models are based on a smooth Fourier interpolation of Kohn-Sham eigenvalues and its derivatives, taking into account non-parabolicity (beyond the parabolic or Kane models), degeneracy and multiplicity of the energy bands on the same footing, within very low computational cost. In order to test our methodology, we calculated the anisotropic thermoelectric transport properties of low temperature phase (Pnma) of intrinsic p-type and hole-doped tin selenide (SnSe). Our results are in quantitative agreement with experimental data, regarding the evolution of the anisotropic thermoelectric coefficients with both temperature and chemical potential. Hence, from this picture, we also obtained the evolution and understanding of the main scattering processes of the overall thermoelectric transport in p-type SnSe. △ Less

Submitted 9 June, 2020; originally announced June 2020.

The 2D pn Junction Driven Out-of-Equilibrium

Authors: Ferney A. Chaves, Pedro C. Feijoo, David Jiménez

Abstract: The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilib… ▽ More The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilibrium. To fill the current gap in understanding, we investigate the electrostatics and electronic transport of 2D lateral pn junctions. To do so we implement a physics-based simulator that selfconsistently solves the 2D Poisson's equation coupled to the drift-diffusion and continuity equations. Notably, the simulator takes into account the strong influence of the out of plane electric field through the surrounding dielectric, capturing the weak screening of charge carriers. Supported by simulations, we propose a Shockley-like equation for the ideal current voltage characteristics, in full analogy to the bulk junction after defining an effective depletion layer (EDL). We also discuss the impact of recombination generation processes inside the EDL, which actually produce a significant deviation with respect to the ideal behavior, consistently with experimental data. Moreover, we analyze the capacitances and conductance of the 2D lateral pn junction. Based on its equivalent circuit we investigate its cut-off frequency targeting RF applications. To gain deeper insight into the role played by material dimensionality, we benchmark the performances of single-layer MoS2 (2D) lateral pn junctions against those of the Si (3D) junction. Finally, a practical discussion on the short length 2D junction case together with the expected impact of interface states has been provided. Given the available list of 2D materials, this work opens the door to a wider exploration of material dependent performances. △ Less

Submitted 6 July, 2020; v1 submitted 18 March, 2020; originally announced March 2020.

Journal ref: Nanoscale Advances, 2020, 2, 3252 - 3262

Effect of zitterbewegung on the propagation of wave packets in ABC-stacked multilayer graphene: an analytical and computational approach

Authors: I. R. Lavor, D. R. da Costa, Andrey Chaves, S. H. R. Sena, G. A. Farias, B. Van Duppen, F. M. Peeters

Abstract: The time evolution of a low-energy two-dimensional Gaussian wave packet in ABC-stacked $n$-layer graphene (ABC-NLG) is investigated. Expectation values of the position $(x,y)$ of center-of-mass and the total probability densities of the wave packet are calculated analytically using the Green's function method. These results are confirmed using an alternative numerical method based on the split-ope… ▽ More The time evolution of a low-energy two-dimensional Gaussian wave packet in ABC-stacked $n$-layer graphene (ABC-NLG) is investigated. Expectation values of the position $(x,y)$ of center-of-mass and the total probability densities of the wave packet are calculated analytically using the Green's function method. These results are confirmed using an alternative numerical method based on the split-operator technique within the Dirac approach for ABC-NLG, which additionally allows to include external fields and potentials. The main features of the zitterbewegung (trembling motion) of wave packets in graphene are demonstrated and are found to depend not only on the wave packet width and initial pseudospin polarization, but also on the number of layers. Moreover, the analytical and numerical methods proposed here allow to investigate wave packet dynamics in graphene systems with an arbitrary number of layers and arbitrary potential landscapes. △ Less

Submitted 1 October, 2020; v1 submitted 13 March, 2020; originally announced March 2020.

Comments: 14 pages, 8 figures

Journal ref: J. Phys.: Condens. Matter 0, 0 (2020)

Exciton g-factors of van der Waals heterostructures from first principles calculations

Authors: Tomasz Woźniak, Paulo E. Faria Junior, Gotthard Seifert, Andrey Chaves, Jens Kunstmann

Abstract: External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interl… ▽ More External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors. △ Less

Submitted 26 April, 2020; v1 submitted 6 February, 2020; originally announced February 2020.

Comments: 29 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. B 101, 235408 (2020)

Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications

Authors: Ferney A. Chaves, David Jimenez, Jaime E. Santos, Peter Boggild, Jose M. Caridad

Abstract: Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in l… ▽ More Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity. In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Comments: 48 pages, 9 figures

Journal ref: Nanoscale, 2019, 11, 10273-10281

Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity

Authors: Itai Epstein, Bernat Terrés, André J. Chaves, Varun-Varma Pusapati, Daniel A. Rhodes, Bettina Frank, Valentin Zimmermann, Ying Qin, Kenji Watanabe, Takashi Taniguchi, Harald Giessen, Sefaattin Tongay, James C. Hone, Nuno M. R. Peres, Frank Koppens

Abstract: Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has no… ▽ More Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultra-low excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, non-radiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices. △ Less

Submitted 9 September, 2019; v1 submitted 20 August, 2019; originally announced August 2019.

Journal ref: Nano Lett. 2020, 20, 5, 3545-3552

Electron collimation at van der Waals domain walls in bilayer graphene

Authors: Hasan M. Abdullah, D. R. da Costa, H. Bahlouli, A. Chaves, F. M. Peeters, Ben Van Duppen

Abstract: We show that a domain wall separating single layer graphene (SLG) and AA-stacked bilayer graphene (AA-BLG) can be used to generate highly collimated electron beams which can be steered by a magnetic field. Such system exists in two distinct configurations, namely, locally delaminated AA-BLG and terminated AA-BLG whose terminal edge-type can be either zigzag or armchair. We investigate the electron… ▽ More We show that a domain wall separating single layer graphene (SLG) and AA-stacked bilayer graphene (AA-BLG) can be used to generate highly collimated electron beams which can be steered by a magnetic field. Such system exists in two distinct configurations, namely, locally delaminated AA-BLG and terminated AA-BLG whose terminal edge-type can be either zigzag or armchair. We investigate the electron scattering using semi-classical dynamics and verify the results independently with wave-packed dynamics simulations. We find that the proposed system supports two distinct types of collimated beams that correspond to the lower and upper cones in AA-BLG. Our computational results also reveal that collimation is robust against the number of layers connected to AA-BLG and terminal edges. △ Less

Submitted 16 July, 2019; originally announced July 2019.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 100, 045137 (2019)

Quantization of graphene plasmons

Authors: Beatriz A. Ferreira, B. Amorim, A. J. Chaves, N. M. R. Peres

Abstract: In this article we perform the quantization of graphene plasmons using both a macroscopic approach based on the classical average electromagnetic energy and a quantum hydrodynamic model, in which graphene charge carriers are modeled as a charged fluid. Both models allow to take into account the dispersion of graphenes optical response, with the hydrodynamic model also allowing for the inclusion of… ▽ More In this article we perform the quantization of graphene plasmons using both a macroscopic approach based on the classical average electromagnetic energy and a quantum hydrodynamic model, in which graphene charge carriers are modeled as a charged fluid. Both models allow to take into account the dispersion of graphenes optical response, with the hydrodynamic model also allowing for the inclusion of non-local effects. Using both methods, the electromagnetic field mode-functions, and the respective frequencies, are determined for two different graphene structures. we show how to quantize graphene plasmons, considering that graphene is a dispersive medium, and taking into account both local and nonlocal descriptions. It is found that the dispersion of graphene's optical response leads to a non-trivial normalization condition for the mode-functions. The obtained mode-functions are then used to calculate the decay of an emitter, represented by a dipole, via the excitation of graphene surface plasmon-polaritons. The obtained results are compared with the total spontaneous decay rate of the emitter and a near perfect match is found in the relevant spectral range. It is found that non-local effects in graphene's conductivity, become relevant for the emission rate for small Fermi energies and small distances between the dipole and the graphene sheet. △ Less

Submitted 27 May, 2019; originally announced May 2019.

Comments: 14 pages, 7 figures

Journal ref: Phys. Rev. A 101, 033817 (2020)

Luminescent emission of excited Rydberg excitons from monolayer WSe2

Authors: Shao-Yu Chen, Zhengguang Lu, Thomas Goldstein, Jiayue Tong, Andrey Chaves, Jens Kunstmann, L. S. R. Cavalcante, Tomasz Woźniak, Gotthard Seifert, D. R. Reichman, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Jun Yan

Abstract: We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4s excited state is directly observed in photoluminescence spectroscopy in an out-of-plane magnetic field up to 31 Tesla. We confirm the progressively larger exciton size for higher energy e… ▽ More We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4s excited state is directly observed in photoluminescence spectroscopy in an out-of-plane magnetic field up to 31 Tesla. We confirm the progressively larger exciton size for higher energy excited states through diamagnetic shift measurements. This also enables us to estimate the 1s exciton binding energy to be about 170 meV, which is significantly smaller than most previous reports. The Zeeman shift of the 1s to 3s states, from both luminescence and absorption measurements, exhibits a monotonic increase of g-factor, reflecting nontrivial magnetic-dipole-moment differences between ground and excited exciton states. This systematic evolution of magnetic dipole moments is theoretically explained from the spreading of the Rydberg states in momentum space. △ Less

Submitted 17 March, 2019; originally announced March 2019.

Propagation of surface plasmons on plasmonic Bragg gratings

Authors: A. J. Chaves, N. M. R. Peres

Abstract: We use coupled-mode theory to describe the scattering of a surface-plasmon polariton (SPP) from a square wave grating (Bragg grating) of finite extension written on the surface of either a metal-dielectric interface or a dielectric-dielectric interface covered with a patterned graphene sheet. We find analytical solutions for the reflectance and transmittance of SPP's when only two modes (forward-… ▽ More We use coupled-mode theory to describe the scattering of a surface-plasmon polariton (SPP) from a square wave grating (Bragg grating) of finite extension written on the surface of either a metal-dielectric interface or a dielectric-dielectric interface covered with a patterned graphene sheet. We find analytical solutions for the reflectance and transmittance of SPP's when only two modes (forward- and back-scattered) are considered. We show that in both cases the reflectance spectrum presents stop-bands where the SPP is completely back-scattered, if the grating is not too shallow. In addition, the reflectance coefficient shows Fabry-Pérot oscillations when the frequency of the SPP is out of the stop-band region. For a single dielectric well, we show that there are frequencies of transmission equal to 1. We also provide simple analytical expression for the different quantities in the electrostatic limit. △ Less

Submitted 9 September, 2019; v1 submitted 11 December, 2018; originally announced December 2018.

Comments: 10 pages, 7 figures

Journal ref: Journal of Applied Physics 125, 243106 (2019)

Plasmons in bias-induced topological phase transition in black phosphorus

Authors: D. J. P. de Sousa, L. S. R. Cavalcante, Andrey Chaves, J. Milton Pereira Jr., Tony Low

Abstract: We investigate the plasmons in bilayer black phosphorus (BP) with bias-driven formation of Dirac cones, by develo** an effective two-band Hamiltonian that captures this electronic transition with great accuracy. We show that the appearance of the Dirac cones lead to additional linearly dispersing acoustic plasmon mode, in conjunction to the conventional plasmon. In addition, the change in the Fe… ▽ More We investigate the plasmons in bilayer black phosphorus (BP) with bias-driven formation of Dirac cones, by develo** an effective two-band Hamiltonian that captures this electronic transition with great accuracy. We show that the appearance of the Dirac cones lead to additional linearly dispersing acoustic plasmon mode, in conjunction to the conventional plasmon. In addition, the change in the Fermi surface topology from a disc to ring or dual pockets also modifies the dielectric loss. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 5 pages, 3 figures

Excitons in hexagonal boron nitride single-layer: a new platform for polaritonics in the ultraviolet

Authors: F. Ferreira, A. J. Chaves, N. M. R. Peres, R. M. Ribeiro

Abstract: The electronic and optical properties of 2D hexagonal boron nitride are studied using first principle calculations. GW and BSE methods are employed in order to predict with better accuracy the excited and excitonic properties of this material. We determine the values of the band gap, optical gap, excitonic binding energies and analyse the excitonic wave functions. We also calculate the exciton ene… ▽ More The electronic and optical properties of 2D hexagonal boron nitride are studied using first principle calculations. GW and BSE methods are employed in order to predict with better accuracy the excited and excitonic properties of this material. We determine the values of the band gap, optical gap, excitonic binding energies and analyse the excitonic wave functions. We also calculate the exciton energies following an equation of motion formalism and the Elliot formula, and find a very good agreement with the GW+BSE method. The optical properties are studied for both the TM and TE modes, showing that 2D hBN is a good candidate to polaritonics in the UV range. In particular it is shown that a single layer of h-BN can act as an almost perfect mirror for ultraviolet electromagnetic radiation. △ Less

Submitted 17 July, 2018; originally announced July 2018.

Journal ref: Journal of the Optical Society of America B Vol. 36, Issue 3, pp. 674-683 (2019)

Conditions for the occurrence of Coulomb blockade in phosphorene quantum dots at room temperature

Authors: H. A. Melo, M. A. Lino, D. R. da Costa, A. Chaves, J. M. Pereira Jr., G. A. Farias, J. S. de Sousa

Abstract: We study the addition energy spectra of phosphorene quantum dots focusing on the role of dot size, edges passivation, number of layers and dielectric constant of the substrate where the dots are deposited. We show that for sufficiently low dielectric constants ($\varepsilon_{sub} < 4$), Coulomb blockade can be observed in dot sizes larger than 10 nm, for both passivated and unpassivated edges. For… ▽ More We study the addition energy spectra of phosphorene quantum dots focusing on the role of dot size, edges passivation, number of layers and dielectric constant of the substrate where the dots are deposited. We show that for sufficiently low dielectric constants ($\varepsilon_{sub} < 4$), Coulomb blockade can be observed in dot sizes larger than 10 nm, for both passivated and unpassivated edges. For higher dielectric constants (up to $\varepsilon_{sub} = 30$), Coulomb blockade demands smaller dot sizes, but this depends whether the edges are passivated or not. This dramatic role played by the substrate is expected to impact on the development of application based on phosphorene quantum dots. △ Less

Submitted 14 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 115438 (2018)

Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures

Authors: Jens Kunstmann, Fabian Mooshammer, Philipp Nagler, Andrey Chaves, Frederick Stein, Nicola Paradiso, Gerd Plechinger, Christoph Strunk, Christian Schüller, Gotthard Seifert, David R. Reichman, Tobias Korn

Abstract: Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges… ▽ More Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual monolayers allows to tune various properties via choice of materials and relative orientation of the layers. In these structures, a new type of exciton emerges, where electron and hole are spatially separated. These interlayer excitons allow exploration of many-body quantum phenomena and are ideally suited for valleytronic applications. Mostly, a basic model of fully spatially-separated electron and hole stemming from the $K$ valleys of the monolayer Brillouin zones is applied to describe such excitons. Here, we combine photoluminescence spectroscopy and first principle calculations to expand the concept of interlayer excitons. We identify a partially charge-separated electron-hole pair in MoS$_2$/WSe$_2$ heterostructures residing at the $Γ$ and $K$ valleys. We control the emission energy of this new type of momentum-space indirect, yet strongly-bound exciton by variation of the relative orientation of the layers. These findings represent a crucial step towards the understanding and control of excitonic effects in TMDC heterostructures and devices. △ Less

Submitted 13 March, 2018; originally announced March 2018.

Comments: Nature Physics (2018), in press [main article (letter) and Supporting Information]

Journal ref: Nature Physics (2018)

Electrostatics of Two-Dimensional Lateral Junctions

Authors: Ferney A. Chaves, David Jiménez

Abstract: The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS$_2$ homojunction, the WSe$_2$-MoS$_2$ monolayer and MoS$_2$ monolayer/multilayer heterojunctions, have been demonstra… ▽ More The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS$_2$ homojunction, the WSe$_2$-MoS$_2$ monolayer and MoS$_2$ monolayer/multilayer heterojunctions, have been demonstrated. Here we report the investigation of 2D lateral junction electrostatics, which differs from the bulk case because of the weaker screening, producing a much longer transition region between the space charge region and the quasi-neutral region, making inappropriate the use of the complete-depletion approximation. For such a purpose we have developed a method based on the conformal map** technique to solve the 2D electrostatics, which is widely applicable to every kind of junctions, giving accurate results for even large asymmetric charge distribution scenarios. △ Less

Submitted 27 March, 2019; v1 submitted 13 February, 2018; originally announced February 2018.

Comments: 8 pages. 7 figures, Supplementary material

Journal ref: Nanotechnology, Volume 29, Number 27 (2018)

Localized surface plasmons in a continuous and flat graphene sheet

Authors: André J. Chaves, Diego R. Costa, Gil A. Farias, Nuno M. R. Peres

Abstract: We derive an integral equation describing surface-plasmon polaritons in graphene deposited on a substrate with a planar surface and a dielectric protrusion in the opposite surface of the dielectric slab. We show that the problem is mathematically equivalent to the solution of a Fredholm equation, which we solve exactly. In addition, we show that the dispersion relation of the localized surface pla… ▽ More We derive an integral equation describing surface-plasmon polaritons in graphene deposited on a substrate with a planar surface and a dielectric protrusion in the opposite surface of the dielectric slab. We show that the problem is mathematically equivalent to the solution of a Fredholm equation, which we solve exactly. In addition, we show that the dispersion relation of the localized surface plasmons is determined by the geometric parameters of the protrusion alone. We also show that such system supports both even and odd modes. We give the electrostatic potential and the stream plot of the electrostatic field, which clearly show the localized nature of the surface plasmons in a continuous and flat graphene sheet. △ Less

Submitted 11 May, 2018; v1 submitted 11 January, 2018; originally announced January 2018.

Comments: 11 pages, 9 figures, Accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 97, 205435 (2018)

Scattering of graphene plasmons at abrupt interfaces: an analytic and numeric study

Authors: A. J. Chaves, B. Amorim, Yu. V. Bludov, P. A. D. Gonçalves, N. M. R. Peres

Abstract: We discuss the scattering of graphene surface plasmon-polaritons (SPPs) at an interface between two semi-infinite graphene sheets with different do** levels and/or different underlying dielectric substrates. We take into account retardation effects and the emission of free radiation in the scattering process. We derive approximate analytic expressions for the reflection and the transmission coef… ▽ More We discuss the scattering of graphene surface plasmon-polaritons (SPPs) at an interface between two semi-infinite graphene sheets with different do** levels and/or different underlying dielectric substrates. We take into account retardation effects and the emission of free radiation in the scattering process. We derive approximate analytic expressions for the reflection and the transmission coefficients of the SPPs as well as the same quantities for the emitted free radiation. We show that the scattering problem can be recast as a Fredholm equation of the second kind. Such equation can then be solved by a series expansion, with the first term of the series correspond to our approximated analytical solution for the reflection and transmission amplitudes. We have found that almost no free radiation is emitted in the scattering process and that under typical experimental conditions the back-scattered SPP transports very little energy. This work provides a theoretical description of graphene plasmon scattering at an interface between distinct Fermi levels which could be relevant for the realization of plasmonic circuitry elements such as plasmonic lenses or reflectors, and for controlling plasmon propagation by modulating the potential landscape of graphene. △ Less

Submitted 6 November, 2017; originally announced November 2017.

Comments: 28 pages

Journal ref: Phys. Rev. B 97, 035434 (2018)

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

Authors: Guowei Zhang, Andrey Chaves, Shenyang Huang, Fanjie Wang, Qiaoxia Xing, Tony Low, Hugen Yan

Abstract: The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems. Mono- and few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investiga… ▽ More The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems. Mono- and few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. Here, we report the first systematic measurement of exciton binding energies in ultrahigh quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2-6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer number can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications. △ Less

Submitted 16 March, 2018; v1 submitted 5 November, 2017; originally announced November 2017.

Comments: updated version, now 2 layer BP exciton binding energy is included

Journal ref: Science Advances,Vol. 4, no. 3, eaap9977 (2018)