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Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe
Authors:
Michael Chilcote,
Alessandro R. Mazza,
Qiangsheng Lu,
Isaiah Gray,
Qi Tian,
Qinwen Deng,
Duncan Moseley,
An-Hsi Chen,
Jason Lapano,
Jason S. Gardner,
Gyula Eres,
T. Zac Ward,
Erxi Feng,
Huibo Cao,
Valeria Lauter,
Michael A. McGuire,
Raphael Hermann,
David Parker,
Myung-Geun Han,
Asghar Kayani,
Gaurab Rimal,
Liang Wu,
Timothy R. Charlton,
Robert G. Moore,
Matthew Brahlek
Abstract:
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/In…
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The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.
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Submitted 6 June, 2024;
originally announced June 2024.
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Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure
Authors:
Arpita Mitra,
Run Xiao,
Wilson Yanez,
Yongxi Ou,
Juan Chamorro,
Tyrel McQueen,
Alexander J. Grutter,
Julie A. Borchers,
Michael R. Fitzsimmons,
Timothy R. Charlton,
Nitin Samarth
Abstract:
Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through do** with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn…
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Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through do** with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$).
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Submitted 1 June, 2023;
originally announced June 2023.
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Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Authors:
Alessandro R. Mazza,
Jason Lapano,
Harry M. Meyer III,
Christopher T. Nelson,
Tyler Smith,
Yun-Yi Pai,
Kyle Noordhoek,
Benjamin J. Lawrie,
Timothy R. Charlton,
Robert G. Moore,
T. Zac Ward,
Mao-Hua Du,
Gyula Eres,
Matthew Brahlek
Abstract:
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for develo** novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox…
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Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for develo** novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.
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Submitted 22 May, 2022;
originally announced May 2022.
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Designer Magnetism in High Entropy Oxides
Authors:
Alessandro R. Mazza,
Elizabeth Skoropata,
Yogesh Sharma,
Jason Lapano,
Thomas W. Heitmann,
Brianna L. Musico,
Veerle Keppens,
Zheng Gai,
John W. Freeland,
Timothy R. Charlton,
Matthew J. Brahlek,
Adriana Moreo,
Elbio Dagotto,
Thomas Z. Ward
Abstract:
Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate…
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Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate that high entropy oxides present an unexplored route to designing quantum materials in which the presence of strong local compositional disorder hosted on a positionally ordered lattice can be used to generate highly tunable emergent magnetic behavior--from macroscopically ordered states to frustration-driven dynamic spin interactions. Single crystal La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films are used as a structurally uniform model system hosting a magnetic sublattice with massive microstate disorder in the form of site-to-site spin and exchange type inhomogeneity. A classical Heisenberg model is found to be sufficient to describe how compositionally disordered systems can paradoxically host long-range magnetic uniformity and demonstrates that balancing the populating elements based on their discrete quantum parameters can be used to give continuous control over ordering types and critical temperatures. Theory-guided experiments show that composite exchange values derived from the complex mix of microstate interactions can be used to design the required compositional parameters for a desired response. These predicted materials are synthesized and found to possess an incipient quantum critical point when magnetic ordering types are designed to be in direct competition; this leads to highly controllable exchange bias sensitivity in the monolithic single crystal films previously accessible only in intentionally designed bilayer heterojunctions.
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Submitted 12 August, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism
Authors:
R. O. M. Aboljadayel,
C. J. Kinane,
C. A. F. Vaz,
D. M. Love,
R. S. Weatherup,
P. Braeuninger-Weimer,
M. -B. Martin,
A. Ionescu,
A. J. Caruana,
T. R. Charlton,
J. Llandro,
P. M. S. Monteiro,
C. H. W. Barnes,
S. Hofmann,
S. Langridge
Abstract:
We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to…
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We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization.
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Submitted 21 March, 2022; v1 submitted 25 January, 2021;
originally announced January 2021.
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Study of magnetic interface and its effect in Fe/NiFe bilayers of alternating order
Authors:
Sagarika Nayak,
Sudhansu Sekhar Das,
Braj Bhusan Singh,
Timothy R. Charlton,
Christy J. Kinane,
Subhankar Bedanta
Abstract:
We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coup…
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We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coupling being dependent on the interface changes upon alternating the order of magnetic layers. The magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when NiFe layer is grown over the Fe layers. This enhancement in the magnetic parameters is primarily dependent on the increase of the thickness and magnetic moment of Fe-NiFe interfacial layer as revealed from the polarized neutron reectivity (PNR) data of the bilayer samples. The difference in the thickness and magnetization of the Fe-NiFe interfacial layer indicates the modification of the microstructure by alternating the order of the magnetic layers of the bilayers. The interfacial magnetic moment increased by almost 18 % when NiFe layer is grown over the Fe layer. In spite of the different values of anisotropy fields and modified interfacial exchange coupling, the Gilbert dam** constant values of the ferromagnetic bilayers remain similar to single NiFe layer.
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Submitted 10 June, 2020;
originally announced June 2020.
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Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films
Authors:
Charles S. Spencer,
Jacob Gayles,
Nicholas A. Porter,
Satoshi Sugimoto,
Zabeada Aslam,
Christian J. Kinane,
Timothy R. Charlton,
Frank Freimuth,
Stanislav Chadov,
Sean Langridge,
Jairo Sinova,
Claudia Felser,
Stefan Blügel,
Yuriy Mokrousov,
Christopher H. Marrows
Abstract:
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed usin…
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Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content $y$ and diverges at $y \sim 0.45$. This indicates a zero-crossing of the DMI, which we reproduced in calculations using first principle methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content $y$. The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around $y \sim 0.5$. Our first principles calculations show a peak in the topological Hall constant at this value of $y$, related to the strong spin-polarisation predicted for intermediate values of $y$. Half-metallicity is predicted for $y = 0.6$, consistent with the experimentally observed linear magnetoresistance at this composition. Whilst it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for $y \sim 0.5$ are much larger then expected when the very small emergent fields associated with the divergence in the DMI are taken into account.
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Submitted 8 June, 2018; v1 submitted 8 March, 2018;
originally announced March 2018.
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Manipulation of the spin helix in FeGe thin films and FeGe/Fe multilayers
Authors:
Nicholas A. Porter,
Charles S. Spencer,
Rowan C. Temple,
Christian J. Kinane,
Timothy R. Charlton,
Sean Langridge,
Christopher H. Marrows
Abstract:
Magnetic materials without structural inversion symmetry can display the Dzyaloshinskii-Moriya interaction, which manifests itself as chiral magnetic ground states. These chiral states can interact in complex ways with applied fields and boundary conditions provided by finite sample sizes that are of the order of the lengthscale of the chiral states. Here we study epitaxial thin films of FeGe with…
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Magnetic materials without structural inversion symmetry can display the Dzyaloshinskii-Moriya interaction, which manifests itself as chiral magnetic ground states. These chiral states can interact in complex ways with applied fields and boundary conditions provided by finite sample sizes that are of the order of the lengthscale of the chiral states. Here we study epitaxial thin films of FeGe with a thickness close to the helix pitch of the helimagnetic ground state, which is about 70 nm, by conventional magnetometry and polarized neutron reflectometry. We show that the helix in an FeGe film reverses under the application of a field by deforming into a helicoidal form, with twists in the helicoid being forced out of the film surfaces on the way to saturation. An additional boundary condition was imposed by exchange coupling a ferromagnetic Fe layer to one of the interfaces of an FeGe layer. This forces the FeGe spins at the interface to point in the same direction as the Fe, preventing node expulsion and giving a handle by which the reversal of the helical magnet may be controlled.
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Submitted 4 June, 2015;
originally announced June 2015.
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Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer
Authors:
C. Le Graët,
T. R. Charlton,
M. McLaren,
M. Loving,
S. A. Morley,
C. J. Kinane,
R. M. D. Brydson,
L. H. Lewis,
S. Langridge,
C. H. Marrows
Abstract:
Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by do** other metals onto the Rh site. We have taken advantage of thi…
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Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by do** other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed do** gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350~K and 500~K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications.
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Submitted 23 December, 2014;
originally announced December 2014.
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Observation of a temperature dependent asymmetry in the domain structure of a Pd doped FeRh epilayer
Authors:
C. J. Kinane,
M. Loving,
M. A. de Vries,
R. Fan,
T. R. Charlton,
J. S. Claydon,
D. A. Arena,
F. Maccherozzi,
S. S. Dhesi,
D. Heiman,
C. H. Marrows,
L. H. Lewis,
Sean Langridge
Abstract:
Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both…
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Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both four and twofold symmetries at higher temperature. It is postulated that the lowered symmetry Ising-like nematic phase resides at the near-surface of the epilayer. This behavior is different to that of undoped FeRh suggesting that the variation in symmetry is driven by the competing structural and electronic interactions in the nanoscale FeRh film coupled with the effect of the chemical do** disorder.
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Submitted 8 July, 2014;
originally announced July 2014.
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Giant topological Hall effect in strained Fe$_{0.7}$Co$_{0.3}$Si epilayers
Authors:
Nicholas A. Porter,
Priyasmita Sinha,
Michael B. Ward,
Alexey N. Dobrynin,
Rik M. D. Brydson,
Timothy R. Charlton,
Christian J. Kinane,
Michael D. Robertson,
Sean Langridge,
Christopher H. Marrows
Abstract:
The coupling of electron spin to real-space magnetic textures leads to a variety of interesting magnetotransport effects. The skyrmionic spin textures often found in chiral B20-lattice magnets give rise, via real-space Berry phases, to the topological Hall effect, but it is typically rather small. Here, B20-ordered Fe$_{0.7}$Co$_{0.3}$Si epilayers display a giant topological Hall effect due to the…
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The coupling of electron spin to real-space magnetic textures leads to a variety of interesting magnetotransport effects. The skyrmionic spin textures often found in chiral B20-lattice magnets give rise, via real-space Berry phases, to the topological Hall effect, but it is typically rather small. Here, B20-ordered Fe$_{0.7}$Co$_{0.3}$Si epilayers display a giant topological Hall effect due to the combination of three favourable properties: they have a high spin-polarisation, a large ordinary Hall coefficient, and dense chiral spin textures. The topological Hall resistivity is as large as 820 n$Ω$cm at helium temperatures. Moreover, we observed a drop in the longitudinal resistivity of 100 n$Ω$cm at low temperatures in the same field range, suggesting that it is also of topological origin. That such strong effects can be found in material grown in thin film form on commercial silicon wafer bodes well for skyrmion-based spintronics.
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Submitted 5 December, 2013;
originally announced December 2013.
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Thickness-dependent magnetic properties of oxygen-deficient EuO
Authors:
M. Barbagallo,
T. Stollenwerk,
J. Kroha,
N. -J. Steinke,
N. D. M. Hine,
J. F. K. Cooper,
C. H. W. Barnes,
A. Ionescu,
P. M. D. S. Monteiro,
J. -Y. Kim,
K. R. A. Ziebeck,
C. J. Kinane,
R. M. Dalgliesh,
T. R. Charlton,
S. Langridge
Abstract:
We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that…
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We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.
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Submitted 21 April, 2011;
originally announced April 2011.
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Neutron Reflection from the Surface of Liquid 4He with and without a Layer of 3He
Authors:
T. R. Charlton,
R. M. Dalgliesh,
A. Ganshin,
O. Kirichek,
S. Langridge,
P. V. E. McClintock
Abstract:
We report and discuss the first neutron reflection measurements from the free surface of normal and superfluid 4He and of liquid 3He-4He mixture. In case of liquid 4He the surface roughness is different above and below the lambda transition, being smoother in the superfluid state. For the superfluid, we also observe the formation of a surface layer ~200 A thick which has a subtly different neutr…
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We report and discuss the first neutron reflection measurements from the free surface of normal and superfluid 4He and of liquid 3He-4He mixture. In case of liquid 4He the surface roughness is different above and below the lambda transition, being smoother in the superfluid state. For the superfluid, we also observe the formation of a surface layer ~200 A thick which has a subtly different neutron scattering cross-section. The results can be interpreted as an enhancement of Bose-Einstein condensate fraction close to the helium surface. We find that the addition of 3He isotopic impurities leads to the formation of Andreev levels at low temperatures.
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Submitted 19 November, 2008;
originally announced November 2008.
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Neutron reflection from the surface of normal and superfluid 4He
Authors:
T. R. Charlton,
R. M. Dalgliesh,
A. Ganshin,
O. Kirichek,
S. Langridge,
P. V. E. McClintock
Abstract:
The reflection of neutrons from a helium surface has been observed for the first time. The 4He surface is smoother in the superfluid state at 1.54 K than in the case of the normal liquid at 2.3 K. In the superfluid state we also observe a surface layer ~200 Angstroms thick which has a subtly different neutron scattering cross-section, which may be explained by an enhanced Bose-Einstein condensat…
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The reflection of neutrons from a helium surface has been observed for the first time. The 4He surface is smoother in the superfluid state at 1.54 K than in the case of the normal liquid at 2.3 K. In the superfluid state we also observe a surface layer ~200 Angstroms thick which has a subtly different neutron scattering cross-section, which may be explained by an enhanced Bose-Einstein condensate fraction close to the helium surface.
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Submitted 5 December, 2007;
originally announced December 2007.