Showing 1–50 of 57 results for author: Chao, J

Topological Fermi-arc surface state covered by floating electrons on a two-dimensional electride

Authors: Chan-young Lim, Min-Seok Kim, Dong Cheol Lim, Sunghun Kim, Yeonghoon Lee, Jaehoon Cha, Gyubin Lee, Sang Yong Song, Dinesh Thapa, Jonathan D. Denlinger, Seong-Gon Kim, Sung Wng Kim, Jungpil Seo, Yeongkwan Kim

Abstract: Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromag… ▽ More Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromagnetic electride $[Gd_{2}$C]^{2+}\cdot2e^{-}$. In particular, the presence of Weyl cones and Fermi-arc states is demonstrated through photon energy-dependent ARPES measurements, agreeing with theoretical band structure calculations. Notably, the STM measurements reveal that the Fermi-arc states exist underneath a floating quantum electron liquid on the top Gd layer, forming double-stacked surface states in a heterostructure. Our work thus not only unveils the non-trivial topology of the $[Gd_{2}$C]^{2+}\cdot2e^{-}$ electride but also realizes a surface heterostructure that can host phenomena distinct from the bulk. △ Less

Submitted 12 July, 2024; originally announced July 2024.

Comments: 22 pages, 6 figures

Journal ref: Nat. Commun. 15 (2024) 5615

Diamond molecular balance: Revolutionizing high-resolution mass spectrometry from MDa to TDa at room temperature

Authors: Donggeun Lee, Seung-Woo Jeon, Chang-Hwan Yi, Yang-Hee Kim, Yeeun Choi, Sang-Hun Lee, **woong Cha, Seung-Bo Shim, Junho Suh, Il-Young Kim, Dongyeon Daniel Kang, Hojoong Jung, Cherlhyun Jeong, Jae-pyoung Ahn, Hee Chul Park, Sang-Wook Han, Chulki Kim

Abstract: The significance of mass spectrometry lies in its unparalleled ability to accurately identify and quantify molecules in complex samples, providing invaluable insights into molecular structures and interactions. Here, we leverage diamond nanostructures as highly sensitive mass sensors by utilizing a self-excitation mechanism under an electron beam in a conventional scanning electron microscope (SEM… ▽ More The significance of mass spectrometry lies in its unparalleled ability to accurately identify and quantify molecules in complex samples, providing invaluable insights into molecular structures and interactions. Here, we leverage diamond nanostructures as highly sensitive mass sensors by utilizing a self-excitation mechanism under an electron beam in a conventional scanning electron microscope (SEM). The diamond molecular balance (DMB) exhibits exceptional mass resolution of a few MDa and an extensive dynamic range from MDa to TDa, positioning itself as a forefront molecular balance operating at room temperature. Notably, the DMB measures the mass of a single bacteriophage T4, achieving a mass resolution of 4.7 MDa for an analyte at 184 MDa, while precisely determining their positional information on the device. These findings highlight the groundbreaking potential of the DMB as a revolutionary tool for mass analysis at room temperature. △ Less

Submitted 6 June, 2024; v1 submitted 4 June, 2024; originally announced June 2024.

Comments: 15 pages, 4 figures

A self-consistent Hartree theory for lattice-relaxed magic-angle twisted bilayer graphene

Authors: Mohammed M. Al Ezzi, Liangtao Peng, Zhengyu Liu, Jonah Huang Zi Chao, Gayani N. Pallewela, Darryl Foo, Shaffique Adam

Abstract: For twisted bilayer graphene close to magic angle, we show that the effects of lattice relaxation and the Hartree interaction both become simultaneously important. Including both effects in a continuum theory reveals a Lifshitz transition to a Fermi surface topology that supports both a ``heavy fermion" pocket and an ultraflat band ($\approx 8~{\rm meV}$) that is pinned to the Fermi energy for a l… ▽ More For twisted bilayer graphene close to magic angle, we show that the effects of lattice relaxation and the Hartree interaction both become simultaneously important. Including both effects in a continuum theory reveals a Lifshitz transition to a Fermi surface topology that supports both a ``heavy fermion" pocket and an ultraflat band ($\approx 8~{\rm meV}$) that is pinned to the Fermi energy for a large range of fillings. We provide analytical and numerical results to understand the narrow ``magic angle range" that supports this pinned ultraflat band and make predictions for its experimental observation. We believe that the bands presented here are accurate at high temperature and provide a good starting point to understand the myriad of complex behaviour observed in this system. △ Less

Submitted 26 April, 2024; originally announced April 2024.

Singular Hall response from a correlated ferromagnetic flat nodal-line semimetal

Authors: Woohyun Cho, Yoon-Gu Kang, Jaehun Cha, Dong Hyun David Lee, Do Hoon Kiem, Jaewhan Oh, Jongho Park, Changyoung Kim, Yongsoo Yang, Yeong Kwan Kim, Myung Joon Han, Heejun Yang

Abstract: Topological quantum phases have been largely understood in weakly correlated systems, which have identified various quantum phenomena such as spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. He… ▽ More Topological quantum phases have been largely understood in weakly correlated systems, which have identified various quantum phenomena such as spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, we report singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in an itinerant, van der Waals ferromagnetic semimetal, Fe3GaTe2, with a high Curie temperature of Tc=360 K. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe3GaTe2, which implies heavy fermion features in this ferromagnetic topological material. Our circular dichroism in angle-resolved photoemission spectroscopy and theoretical calculations support the original electronic features in the material. Thus, low-dimensional Fe3GaTe2 with electronic correlation, topology, and room-temperature ferromagnetic order appears to be a promising candidate for robust quantum devices. △ Less

Submitted 20 December, 2023; originally announced December 2023.

1D-confined crystallization routes for tungsten phosphides

Authors: Gangtae **, Christian D. Multunas, James L. Hart, Mehrdad T. Kiani, Quynh P. Sam, Han Wang, Yeryun Cheon, Khoan Duong, David J. Hynek, Hyeuk ** Han, Ravishankar Sundararaman, Judy J. Cha

Abstract: Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nano… ▽ More Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for topological metal tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter of ~ 35 nm. Four-dimensional scanning transmission electron microscopy was used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations were carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our find-ings suggest a new crystallization route to stabilize topological materials confined in 1D. △ Less

Submitted 20 September, 2023; originally announced September 2023.

Comments: 5 figures

In operando cryo-STEM of pulse-induced charge density wave switching in TaS$_2$

Authors: James L Hart, Saif Siddique, Noah Schnitzer, Stephen D. Funni, Lena F. Kourkoutis, Judy J. Cha

Abstract: The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS$_2$ devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we oper… ▽ More The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS$_2$ devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS$_2$ device within a scanning transmission electron microscope (STEM) at cryogenic temperature, and directly visualize the changing CDW structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to nearly commensurate and incommensurate CDW phases, depending on the applied voltage amplitude. With our in operando cryo-STEM experiments, we directly correlate the CDW structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS$_2$ devices critical for engineering reliable and scalable TaS$_2$ electronics. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Wafer-scale fabrication of 2D nanostructures via thermomechanical nanomolding

Authors: Mehrdad T Kiani, Quynh P Sam, Yeon Sik Jung, Hyeuk ** Han, Judy J Cha

Abstract: With shrinking dimensions in integrated circuits, sensors, and functional devices, there is a pressing need to develop nanofabrication techniques with simultaneous control of morphology, microstructure, and material composition over wafer length scales. Current techniques are largely unable to meet all these conditions, suffering from poor control of morphology and defect structure or requiring ex… ▽ More With shrinking dimensions in integrated circuits, sensors, and functional devices, there is a pressing need to develop nanofabrication techniques with simultaneous control of morphology, microstructure, and material composition over wafer length scales. Current techniques are largely unable to meet all these conditions, suffering from poor control of morphology and defect structure or requiring extensive optimization or post-processing to achieve desired nanostructures. Recently, thermomechanical nanomolding (TMNM) has been shown to yield single-crystalline, high aspect ratio nanowires of metals, alloys, and intermetallics over wafer-scale distances. Here, we extend TMNM for wafer-scale fabrication of 2D nanostructures. Using Cu, we successfully nanomold Cu nanoribbons with widths < 50 nm, depths ~ 0.5-1 microns and lengths ~ 7 mm into Si trenches at conditions compatible with back end of line processing. Through SEM cross-section imaging and 4D-STEM grain orientation maps, we show that the grain size of the bulk feedstock is transferred to the nanomolded structures up to and including single crystal Cu. Based on the retained microstructures of molded 2D Cu, we discuss the deformation mechanism during molding for 2D TMNM. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 4 figures

Single-particle-exact density functional theory

Authors: Martin-Isbjörn Trappe, Jun Hao Hue, Jonah Huang Zi Chao, Mikołaj Paraniak, Djamila Hiller, Jerzy Ciosłowski, Berthold-Georg Englert

Abstract: We introduce 'single-particle-exact density functional theory' (1pEx-DFT), a novel density functional approach that represents all single-particle contributions to the energy with exact functionals. Here, we parameterize interaction energy functionals by utilizing two new schemes for constructing density matrices from 'participation numbers' of the single-particle states of quantum many-body syste… ▽ More We introduce 'single-particle-exact density functional theory' (1pEx-DFT), a novel density functional approach that represents all single-particle contributions to the energy with exact functionals. Here, we parameterize interaction energy functionals by utilizing two new schemes for constructing density matrices from 'participation numbers' of the single-particle states of quantum many-body systems. These participation numbers play the role of the variational variables akin to the particle densities in standard orbital-free density functional theory. We minimize the total energies with the help of evolutionary algorithms and obtain ground-state energies that are typically accurate at the one-percent level for our proof-of-principle simulations that comprise interacting Fermi gases as well as the electronic structure of atoms and ions, with and without relativistic corrections. We thereby illustrate the ingredients and practical features of 1pEx-DFT and reveal its potential of becoming an accurate, scalable, and transferable technology for simulating mesoscopic quantum many-body systems. △ Less

Submitted 16 October, 2023; v1 submitted 4 May, 2023; originally announced May 2023.

Comments: 45 pages, 6 figures, 4 tables

Journal ref: Annals of Physics 459 (2023) 169497

Stacking disorder and thermal transport properties of $α$-RuCl$_3$

Authors: Heda Zhang, Michael A McGuire, Andrew F May, Joy Chao, Qiang Zheng, Miaofang Chi, Brian C Sales, David G Mandrus, Stephen E Nagler, Hu Miao, Feng Ye, Jiaqiang Yan

Abstract: $α$-RuCl$_3… ▽ More $α$-RuCl$_3$, a well-known candidate material for Kitaev quantum spin liquid, is prone to stacking disorder due to the weak van der Waals bonding between the honeycomb layers. After a decade of intensive experimental and theoretical studies, the detailed correlation between stacking degree of freedom, structure transition, magnetic and thermal transport properties remains unresolved. In this work, we reveal the effects of a small amount of stacking disorder inherent even in high quality $α$-RuCl$_3$ crystals. This small amount of stacking disorder results in the variation of the magnetic ordering temperature, suppresses the structure transition and thermal conductivity. Crystals with minimal amount of stacking disorder have a T$_N>$7.4\,K and exhibit a well-defined structure transition around 140\,K upon cooling. For those with more stacking faults and a T$_N$ below 7\,K, the structure transition occurs well below 140\,K upon cooling and is incomplete, manifested by the diffuse streaks and the coexistence of both high temperature and low temperature phases down to the lowest measurement temperature. Both types of crystals exhibit oscillatory field dependent thermal conductivity and a plateau-like feature in thermal Hall resistivity in the field-induced quantum spin liquid state. However, $α$-RuCl$_3$ crystals with minimal amount of stacking disorder have a higher thermal conductivity that pushes the thermal Hall conductivity to be closer to the half-integer quantized value. These findings demonstrate a strong correlation between layer stacking, structure transition, magnetic and thermal transport properties, underscoring the importance of interlayer coupling in $α$-RuCl$_3$ despite the weak van der Waals bonding. △ Less

Submitted 5 December, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Materials 8, 014402 (2024)

Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$

Authors: James L Hart, Lopa Bhatt, Yanbing Zhu, Myung-Geun Han, Elisabeth Bianco, Shunran Li, David J Hynek, John A Schneeloch, Yu Tao, Despina Louca, Peijun Guo, Yimei Zhu, Felipe Jornada, Evan J Reed, Lena F Kourkoutis, Judy J Cha

Abstract: The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative sta… ▽ More The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe$_2$, which is isostructural and isoelectronic to MoTe$_2$, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe$_2$ devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: 6 figures, 2 tables

Nanomolding of Metastable Mo$_{4}$P$_{3}$

Authors: Mehrdad T Kiani, Quynh P Sam, Gangtae **, Betül Pamuk, Hyeuk ** Han, James L. Hart, J. R. Stauff, Judy J Cha

Abstract: Reduced dimensionality leads to emergent phenomena in quantum materials and there is a need for accelerated materials discovery of nanoscale quantum materials in reduced dimensions. Thermomechanical nanomolding is a rapid synthesis method that produces high quality single-crystalline quantum nanowires with controlled dimensions over wafer-scale sizes. Herein, we apply nanomolding to fabricate nano… ▽ More Reduced dimensionality leads to emergent phenomena in quantum materials and there is a need for accelerated materials discovery of nanoscale quantum materials in reduced dimensions. Thermomechanical nanomolding is a rapid synthesis method that produces high quality single-crystalline quantum nanowires with controlled dimensions over wafer-scale sizes. Herein, we apply nanomolding to fabricate nanowires from bulk feedstock of MoP, a triple-point topological metal with extremely high conductivity that is promising for low-resistance interconnects. Surprisingly, we obtained single-crystalline Mo$_{4}$P$_{3}$ nanowires, a metastable phase at room temperature in atmospheric pressure. We thus demonstrate nanomolding can create metastable phases inaccessible by other nanomaterial syntheses and can explore a previously inaccessible synthesis space at high temperatures and pressures. Furthermore, our results suggest that the current understanding of interfacial solid diffusion for nanomolding is incomplete, providing opportunities to explore solid-state diffusion at high-pressure and high-temperature regimes in confined dimensions. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: 3 figures

Topological Metal MoP Nanowire for Interconnect

Authors: Hyeuk ** Han, Sushant Kumar, Xiaoyang Ji, James L. Hart, Gangtae **, David J. Hynek, Quynh P. Sam, Vicky Hasse, Claudia Felser, David G. Cahill, Ravishankar Sundararaman, Judy J. Cha

Abstract: The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semime… ▽ More The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Comments: 4 figures

A Gapped Phase in Semimetallic T$_{d}$-WTe$_{2}$ Induced by Lithium Intercalation

Authors: Meng**g Wang, Aakash Kumar, Hao Dong, John M. Woods, Joshua V. Pondick, Shiyu Xu, Peijun Guo, Diana Y. Qiu, Judy J. Cha

Abstract: The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivi… ▽ More The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivity with decreasing temperature and its carrier density is almost two orders of magnitude lower than the carrier density of the semi-metallic T$_{d}$ phase, probed by in situ Hall measurements as a function of lithium intercalation. Our theoretical calculations predict the new lithiated phase to be a charge density wave (CDW) phase with a bandgap of ~ 0.14 eV, in good agreement with the in situ transport data. The new phase is structurally distinct from the initial T$_{d}$ phase, characterized by polarization angle-dependent Raman spectroscopy, and large lattice distortions close to 6 % are predicted in the new phase. Thus, we report the first experimental evidence of CDW in T$_{d}$-WTe$_{2}$, projecting WTe$_{2}$ as a new playground for studying the interplay between CDW and superconductivity. Our finding of a new gapped phase in a two-dimensional (2D) semi-metal also demonstrates electrochemical intercalation as a powerful tuning knob for modulating electron density and phase stability in 2D materials. △ Less

Submitted 6 January, 2022; originally announced January 2022.

Comments: 6 figures

Axial Higgs Mode Detected by Quantum Pathway Interference in RTe3

Authors: Yi** Wang, Ioannis Petrides, Grant McNamara, Md Mofazzel Hosen, Shiming Lei, Yueh-Chun Wu, James L. Hart, Hongyan Lv, Jun Yan, Di Xiao, Judy J. Cha, Prineha Narang, Leslie M. Schoop, Kenneth S. Burch

Abstract: The observation of the Higgs boson solidified the standard model of particle physics. However, explanations of anomalies (e.g. dark matter) rely on further symmetry breaking calling for an undiscovered axial Higgs mode. In condensed matter the Higgs was seen in magnetic, superconducting and charge density wave(CDW) systems. Uncovering a low energy mode's vector properties is challenging, requiring… ▽ More The observation of the Higgs boson solidified the standard model of particle physics. However, explanations of anomalies (e.g. dark matter) rely on further symmetry breaking calling for an undiscovered axial Higgs mode. In condensed matter the Higgs was seen in magnetic, superconducting and charge density wave(CDW) systems. Uncovering a low energy mode's vector properties is challenging, requiring going beyond typical spectroscopic or scattering techniques. Here, we discover an axial Higgs mode in the CDW system RTe3 using the interference of quantum pathways. In RTe3 (R=La,Gd), the electronic ordering couples bands of equal or different angular momenta. As such, the Raman scattering tensor associated to the Higgs mode contains both symmetric and antisymmetric components, which can be excited via two distinct, but degenerate pathways. This leads to constructive or destructive interference of these pathways, depending on the choice of the incident and Raman scattered light polarization. The qualitative behavior of the Raman spectra is well-captured by an appropriate tight-binding model including an axial Higgs mode. The elucidation of the antisymmetric component provides direct evidence that the Higgs mode contains an axial vector representation (i.e. a pseudo-angular momentum) and hints the CDW in RTe3 is unconventional. Thus we provide a means for measuring collective modes quantum properties without resorting to extreme experimental conditions. △ Less

Submitted 4 December, 2021; originally announced December 2021.

Effects of Steric Factors on Molecular Do** to MoS$_2$

Authors: Serrae N. Reed, Yifeng Chen, Milad Yarali, David J. Charboneau, Julia B. Curley, Nilay Hazari, Su Ying Quek, Judy J. Cha

Abstract: Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the do** mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fer… ▽ More Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the do** mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fermi level of the 2D host. Our limited knowledge about the impact of factors other than the redox properties of the molecule on do** makes it challenging to controllably use molecules to dope 2D materials and design new OEDs. Here, we functionalize monolayer MoS$_2$ using two molecular dopants, Me- and $^t$Bu-OED, which have the same redox potential but different steric properties to probe the effects of molecular size on the do** level of MoS$_2$. We show that, for the same functionalization conditions, the do** powers of Me- and $^t$Bu-OED are 0.22 - 0.44 and 0.11 electrons per molecule, respectively, demonstrating that the steric properties of the molecule critically affect do** levels. Using the stronger dopant, Me-OED, a carrier density of 1.10 +/- 0.37 x 10$^{14}$ cm$^{-2}$ is achieved in MoS$_2$, the highest do** level to date for MoS$_2$ using surface functionalization. Overall, we establish that tuning of the steric properties of the dopant is essential in the rational design of molecular dopants. △ Less

Submitted 5 August, 2021; v1 submitted 26 July, 2021; originally announced July 2021.

Comments: 5 figures and 1 table

Heterointerface control over lithium-induced phase transitions in MoS2 heterostructures

Authors: Joshua V. Pondick, Aakash Kumar, Meng**g Wang, Sajad Yazdani, John M. Woods, Diana Y. Qiu, Judy J. Cha

Abstract: Phase transitions of two-dimensional materials and their heterostructures enable many applications including electrochemical energy storage, catalysis, and memory; however, the nucleation pathways by which these transitions proceed remain underexplored, prohibiting engineering control for these applications. Here, we demonstrate that the lithium intercalation-induced 2H-1T' phase transition in MoS… ▽ More Phase transitions of two-dimensional materials and their heterostructures enable many applications including electrochemical energy storage, catalysis, and memory; however, the nucleation pathways by which these transitions proceed remain underexplored, prohibiting engineering control for these applications. Here, we demonstrate that the lithium intercalation-induced 2H-1T' phase transition in MoS2 proceeds via nucleation of the 1T' phase at a heterointerface by monitoring the phase transition of MoS2/graphene and MoS2/hexagonal boron nitride (hBN) heterostructures with Raman spectroscopy in situ during intercalation. We observe that graphene-MoS2 heterointerfaces require an increase of 0.8 V in applied electrochemical potential to nucleate the 1T' phase in MoS2 compared to hBN-MoS2 heterointerfaces. The increased nucleation barrier at graphene-MoS2 heterointerfaces is due to the reduced charge transfer from lithium to MoS2 at the heterointerface as lithium also dopes graphene based on ab initio calculations. Further, we show that the growth of the 1T' domain propagates along the heterointerface, rather than through the interior of MoS2. Our results provide the first experimental observations of the heterogeneous nucleation and growth of intercalation-induced phase transitions in two-dimensional materials and heterointerface effects on their phase transition. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Comments: 5 figures

Journal ref: ACS Applied Nano Materials 2021

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Authors: Xurui Zhang, Vivek Kakani, John M. Woods, Judy J. Cha, Xiaoyan Shi

Abstract: We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies fur… ▽ More We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe$_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe$_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases. △ Less

Submitted 29 April, 2021; originally announced April 2021.

Recrystallization Characteristics of Catalytic Alloy and Graphite in Diamond Synthesis

Authors: Sang Jun Cha, Myong Chol Pak, Kwang-Il Kim, Su Gon Kim

Abstract: We first consider the recrystallization characteristics of catalysis alloy and graphite in the process of diamond synthesis under the condition of super high pressure and high temperature in catalysis method. In the process of diamond synthesis catalysis metal is plastically deformed by increase of pressure and then recrystallized as increasing the temperature. As catalysis metal is recrystallized… ▽ More We first consider the recrystallization characteristics of catalysis alloy and graphite in the process of diamond synthesis under the condition of super high pressure and high temperature in catalysis method. In the process of diamond synthesis catalysis metal is plastically deformed by increase of pressure and then recrystallized as increasing the temperature. As catalysis metal is recrystallized, the shape of graphite particle is in spherical shape in the region contacting with the catalyst but in any shape in the opposite region. In addition, we calculate the electron charge density distribution and cohesive energies of cementite structure using the first principle method to investigate the reciprocal interaction between transient metal elements and carbon atoms in high-temperature catalyst synthesis. After determination of lattice constant parameters, we obtain the cohesive energy by subtracting the total energy of the crystal from the summation of total energies of atoms composing the crystal and dividing it by the number of atoms. Therefore, the effect of the catalyst on the diamond synthesis is to be analyzed theoretically. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 11 pages, 5 figures

Journal ref: J. Superhard Mater. 43 (2021) 336-343

Heterointerface effects on lithium-induced phase transitions in intercalated MoS2

Authors: Sajad Yazdani, Joshua V. Pondick, Aakash Kumar, Milad Yarali, John M. Woods, David J. Hynek, Diana Y. Qiu, Judy J. Cha

Abstract: The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN)… ▽ More The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ~ 100 mJ m-2, suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during electrochemical intercalation of Li+ shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 4 figures and 1 table

Journal ref: ACS Applied Materials Interfaces 2021

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David

Authors: David J. Hynek, Raivat M. Singhania, Shiyu Xu, Benjamin Davis, Lei Wang, Milad Yarali, Joshua V. Pondick, John M. Woods, Nicholas C. Strandwitz, Judy J. Cha

Abstract: Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum… ▽ More Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe2 and its potential applications require large area MoTe2 thin films with high crystallinity and thickness control. Here, we present cm2 scale synthesis of 2H MoTe2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoOx thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe2 films: MoTe2 grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2 substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results, and is applicable to grow other transition metal dichalcogenides with layer control. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 6 figure

Journal ref: ACS Nano 2021

Synthesis of narrow SnTe nanowires using alloy nanoparticles

Authors: Pengzi Liu, Hyeuk ** Han, Julia Wei, David J. Hynek, James L. Hart, Myung Geun Han, Christie J. Trimble, James R. Williams, Yimei Zhu, Judy J. Cha

Abstract: Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. Making SnTe into nanowires further induces novel electronic states due to one-dimensional (1D) confinement effects. Thus, for transport measurements, SnTe nanowires must be made narrow… ▽ More Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. Making SnTe into nanowires further induces novel electronic states due to one-dimensional (1D) confinement effects. Thus, for transport measurements, SnTe nanowires must be made narrow in their diameters to ensure the 1D confinement and phase coherence of the topological surface electrons. This study reports a facile growth method to produce narrow SnTe nanowires with a high yield using alloy nanoparticles as growth catalysts. The average diameter of the SnTe nanowires grown using the alloy nanoparticles is 85 nm, nearly a factor of three reduction from the previous average diameter of 240 nm using gold nanoparticles as growth catalysts. Transport measurements reveal the effect of the nanowire diameter on the residual resistance ratio and magnetoresistance. Particularly, the ferroelectric transition temperature for SnTe is observed to change systematically with the nanowire diameter. In situ cryogenic cooling of narrow SnTe nanowires in a transmission electron microscope directly reveals the cubic to rhombohedral structural transition, which is associated with the ferroelectric transition. Thus, these narrow SnTe nanowires represent a model system to study electronic states arising from the 1D confinement, such as 1D topological superconductivity as well as a potential multi-band superconductivity. △ Less

Submitted 15 October, 2020; originally announced October 2020.

Comments: 5 figures

Journal ref: ACS Applied Electronic Materials 2021

A weak topological insulator state in quasi-one-dimensional superconductor TaSe$_3$

Authors: Jounghoon Hyun, Min Yong Jeong, Sunghun Kim, Myung-Chul Jung, Yeonghoon Lee, Chan-young Lim, Jaehun Cha, Gyubin Lee, Yeo** An, Makoto Hashimoto, Donghui Lu, Jonathan D. Denlinger, Myung Joon Han, Yeongkwan Kim

Abstract: A well-established way to find novel Majorana particles in a solid-state system is to have superconductivity arising from the topological electronic structure. To this end, the heterostructure systems that consist of normal superconductor and topological material have been actively explored in the past decade. However, a search for the single material system that simultaneously exhibits intrinsic… ▽ More A well-established way to find novel Majorana particles in a solid-state system is to have superconductivity arising from the topological electronic structure. To this end, the heterostructure systems that consist of normal superconductor and topological material have been actively explored in the past decade. However, a search for the single material system that simultaneously exhibits intrinsic superconductivity and topological phase has been largely limited, although such a system is far more favorable especially for the quantum device applications. Here, we report the electronic structure study of a quasi-one-dimensional (q1D) superconductor TaSe$_3$. Our results of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculation clearly show that TaSe$_3$ is a topological superconductor. The characteristic bulk inversion gap, in-gap state and its shape of non-Dirac dispersion concurrently point to the topologically nontrivial nature of this material. The further investigations of the Z$_2$ indices and the topologically distinctive surface band crossings disclose that it belongs to the weak topological insulator (WTI) class. Hereby, TaSe$_3$ becomes the first verified example of an intrinsic 1D topological superconductor. It hopefully provides a promising platform for future applications utilizing Majorana bound states localized at the end of 1D intrinsic topological superconductors. △ Less

Submitted 13 September, 2020; originally announced September 2020.

The Effect of Mechanical Strain on Lithium Staging in Graphene

Authors: Joshua V. Pondick, Sajad Yazdani, Milad Yarali, Serrae N. Reed, David J. Hynek, Judy J. Cha

Abstract: Lithium intercalation into graphite is the foundation for the lithium-ion battery, and the thermodynamics of the lithiation of graphitic electrodes have been heavily investigated. Intercalated lithium in bulk graphite undergoes structural ordering known as staging to minimize electrostatic repulsions within the crystal lattice. While this process is well-understood for bulk graphite, confinement e… ▽ More Lithium intercalation into graphite is the foundation for the lithium-ion battery, and the thermodynamics of the lithiation of graphitic electrodes have been heavily investigated. Intercalated lithium in bulk graphite undergoes structural ordering known as staging to minimize electrostatic repulsions within the crystal lattice. While this process is well-understood for bulk graphite, confinement effects become important at the nanoscale, which can significantly impact the electrochemistry of nanostructured electrodes. Therefore, graphene offers a model platform to study intercalation dynamics at the nanoscale by combining on-chip device fabrication and electrochemical intercalation with in situ characterization. We show that microscale mechanical strain significantly affects the formation of ordered lithium phases in graphene. In situ Raman spectroscopy of graphene microflakes mechanically constrained at the edge during lithium intercalation reveals a thickness-dependent increase of up to 1.26 V in the electrochemical potential that induces lithium staging. While the induced mechanical strain energy increases with graphene thickness to the fourth power, its magnitude is small compared to the observed increase in electrochemical energy. We hypothesize that the mechanical strain energy increases a nucleation barrier for lithium staging, greatly delaying the formation of ordered lithium phases. Our results indicate that electrode assembly can critically impact lithium staging dynamics important for cycling rates and power generation for batteries. We demonstrate strain engineering in two-dimensional nanomaterials as an approach to manipulate phase transitions and chemical reactivity. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: 4 figures

Journal ref: Advanced Electronic Materials 2021

Multiplicative noise and the diffusion of conserved densities

Authors: **gyi Chao, Thomas Schaefer

Abstract: Stochastic fluid dynamics governs the long time tails of hydrodynamic correlation functions, and the critical slowing down of relaxation phenomena in the vicinity of a critical point in the phase diagram. In this work we study the role of multiplicative noise in stochastic fluid dynamics. Multiplicative noise arises from the dependence of transport coefficients, such as the diffusion constants for… ▽ More Stochastic fluid dynamics governs the long time tails of hydrodynamic correlation functions, and the critical slowing down of relaxation phenomena in the vicinity of a critical point in the phase diagram. In this work we study the role of multiplicative noise in stochastic fluid dynamics. Multiplicative noise arises from the dependence of transport coefficients, such as the diffusion constants for charge and momentum, on fluctuating hydrodynamic variables. We study long time tails and relaxation in the diffusion of a conserved density (model B), and a conserved density coupled to the transverse momentum density (model H). Careful attention is paid to fluctuation-dissipation relations. We observe that multiplicative noise contributes at the same order as non-linear interactions in model B, but is a higher order correction to the relaxation of a scalar density and the tail of the stress tensor correlation function in model H. △ Less

Submitted 17 November, 2020; v1 submitted 3 August, 2020; originally announced August 2020.

Comments: add an appendix, updated the references, 17 pages, 5 figures

Near Unity Molecular Do** Efficiency in Monolayer MoS2

Authors: Milad Yarali, Yiren Zhong, Serrae N. Reed, Juefan Wang, Kanchan A. Ulman, David J. Charboneau, Julia B. Curley, David J. Hynek, Joshua V. Pondick, Sajad Yazdani, Nilay Hazari, Su Ying Quek, Hailiang Wang, Judy J. Cha

Abstract: Surface functionalization with organic electron donors (OEDs) is an effective do** strategy for two-dimensional (2D) materials, which can achieve do** levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the do** efficiencies of OEDs have largely been unmeasured, which is in stark… ▽ More Surface functionalization with organic electron donors (OEDs) is an effective do** strategy for two-dimensional (2D) materials, which can achieve do** levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the do** efficiencies of OEDs have largely been unmeasured, which is in stark contrast to their precision syntheses and tailored redox potentials. Here, using monolayer MoS2 as a model system and an organic reductant based on 4,4-bipyridine (DMAP-OED) as a strong organic dopant, we establish that the do** efficiency of DMAP-OED to MoS2 is in the range of 0.63 to 1.26 electrons per molecule. We also achieve the highest do** level to date in monolayer MoS2 by surface functionalization and demonstrate that DMAP-OED is a stronger dopant than benzyl viologen, which was the previous best OED dopant. The measured range of the do** efficiency is in good agreement with the values predicted from first-principles calculations. Our work provides a basis for the rational design of OEDs for high-level do** of 2D materials. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 19 pages, 4 figures, 1 table

Journal ref: Advanced Electronic Materials 2021

Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe$_2$

Authors: Xurui Zhang, John M. Woods, Judy J. Cha, Xiaoyan Shi

Abstract: We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the… ▽ More We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existences and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin hall state in WTe2 at the monolayer limit. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 115161 (2020)

Josephson Detection of Time Reversal Symmetry Broken Superconductivity in SnTe Nanowires

Authors: C. J. Trimble, M. T. Wei, N. F. Q. Yuan, S. S. Kalantre, P. Liu, H. -J Han, M. -G. Han, Y. Zhu, J. J. Cha, L. Fu, J. R. Williams

Abstract: Exotic superconductors, such as high T$_C$, topological, and heavy-fermion superconductors, require phase sensitive measurements to determine the underlying pairing. Here we investigate the proximity-induced superconductivity in nanowires of SnTe, where an $s\pm is^{\prime}$ superconducting state is produced that lacks the time-reversal and valley-exchange symmetry of the parent SnTe. This effect,… ▽ More Exotic superconductors, such as high T$_C$, topological, and heavy-fermion superconductors, require phase sensitive measurements to determine the underlying pairing. Here we investigate the proximity-induced superconductivity in nanowires of SnTe, where an $s\pm is^{\prime}$ superconducting state is produced that lacks the time-reversal and valley-exchange symmetry of the parent SnTe. This effect, in conjunction with a ferroelectric distortion of the lattice at low temperatures, results in a marked alteration of the properties of Josephson junctions fabricated using SnTe nanowires. This work establishes the existence of a ferroelectric transition in SnTe nanowires and elucidates the role of ferroelectric domain walls on the flow of supercurrent through SnTe weak links. We detail two unique characteristics of these junctions: an asymmetric critical current in the DC Josephson effect and a prominent second harmonic in the AC Josephson effect. Each reveals the broken time-reversal symmetry in the junction. The novel $s\pm is^{\prime}$ superconductivity and the new Josephson effects can be used to investigate fractional vortices [1,2], topological superconductivity in multiband materials [3-5], and new types of Josephson-based devices in proximity-induced multiband and ferroelectric superconductors [6,7]. △ Less

Submitted 19 February, 2020; v1 submitted 9 July, 2019; originally announced July 2019.

Idiosyncratic Approach to Visualize Degradation of Black Phosphorus

Authors: Bilal Abbas Naqvi, Muhammad Arslan Shehzad, Janghwan Cha, Kyung Ah Min, M. Farooq Khan, Sajjad Hussain, Seo Yongho, Suklyun Hong, Eom Jonghwa, Jung Jongwan

Abstract: Black Phosphorus (BP) is an excellent material for post graphene era due to its layer dependent band gap, high mobility and high Ion/Ioff. However, its poor stability in ambient poses a great challenge in its practical and long-term usage. Optical visualization of oxidized BP is the key and foremost step for its successful passivation from the ambience. Here, we have done a systematic study of the… ▽ More Black Phosphorus (BP) is an excellent material for post graphene era due to its layer dependent band gap, high mobility and high Ion/Ioff. However, its poor stability in ambient poses a great challenge in its practical and long-term usage. Optical visualization of oxidized BP is the key and foremost step for its successful passivation from the ambience. Here, we have done a systematic study of the oxidation of BP and developed a technique to optically identify the oxidation of BP using Liquid Crystal (LC). Interestingly we found that rapid oxidation of thin layers of BP makes them disappear and can be envisaged by using the alignment of LC. The molecular dynamics simulations also proved the preferential alignment of LC on oxidized BP. We believe that this simple technique will be effective in passivation efforts of BP and will enable it for exploitation of its properties in the field of electronics. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Report number: 12966

Journal ref: https://www.nature.com/articles/s41598-018-31067-4 2018

Surface reconstruction and charge modulation in BaFe2As2 superconducting film

Authors: S. Kim, S. Yi, M. Oh, B. G. Jang, W. Nam, Y. -C. Yoo, M. Lee, H. Jeon, I. Zoh, H. Lee, C. Zhang, K. H. Kim, J. Seo, J. H. Shim, J. S. Chae, Y. Kuk

Abstract: Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those… ▽ More Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those of as-cleaved surfaces from bulk crystals. The electronic structure of the grown film is different from that in bulk, and it is notable that the film exhibits the same superconducting transport properties. We found that the superconducting gap at the surface is screened at the Ba layer surface in STS measurements, and the charge density wave was observed at the surface in sample in the superconducting state. △ Less

Submitted 7 March, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 24 pages 8 figures

Selective resolution of phonon modes in STM-IETS on clean and oxygen-adsorbed Cu(100) surfaces

Authors: Minjun Lee, Myungchul Oh, Hoyeon Jeon, Sunwouk Yi, Inhae Zoh, Chao Zhang, Jungseok Chae, Young Kuk

Abstract: The observation of surface phonon dispersion using local probes can provide important information related to local structural and thermal properties. In this study, surface phonon modes on a Cu(100) surface were measured using the inelastic tunneling spectroscopy of scanning tunneling microscopy (STM-IETS) with atomically sharp tips. Different phonon modes were selectively measured depending on th… ▽ More The observation of surface phonon dispersion using local probes can provide important information related to local structural and thermal properties. In this study, surface phonon modes on a Cu(100) surface were measured using the inelastic tunneling spectroscopy of scanning tunneling microscopy (STM-IETS) with atomically sharp tips. Different phonon modes were selectively measured depending on the structures of the probing tips or the surfaces. Two different surface phonon modes, at 19.0 meV on a clean Cu(100) surface and at 13.5 meV on an oxygen-adsorbed Cu(100) surface, are explained by the selection rules. Additionally, the spatial variation in STM-IETS showed surface stress relaxation. △ Less

Submitted 5 March, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 19 pages, 4 figures, supplementary material with 2 figures

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures

Authors: Chanyeol Choi, Jiahui Huang, Hung-Chieh Cheng, Hyunseok Kim, Abhinav Kumar Vinod, Sang-Hoon Bae, V. Ongun Ozcelik, Roberto Grassi, Jongjae Chae, Shu-Wei Huang, Xiangfeng Duan, Kristen Kaasbjerg, Tony Low, Chee Wei Wong

Abstract: Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quan… ▽ More Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quantum yields and tunable spectral resonance compared to its bilayer heterostructures at cryogenic temperatures. The observed enhancement in the photoluminescence quantum yield is due to significantly larger electron-hole overlap and higher light absorbance in the trilayer heterostructure, supported via first-principle pseudopotential calculations based on spin-polarized density functional theory. We further uncover the temperature- and power-dependence, as well as time-resolved photoluminescence of the trilayer heterostructure interlayer neutral excitons and trions. Our study elucidates the prospects of manipulating light emission from interlayer excitons and designing atomic heterostructures from first-principles for optoelectronics. △ Less

Submitted 16 September, 2018; v1 submitted 19 June, 2017; originally announced June 2017.

Comments: 25 pages, 5 figures(Maintext). 9 pages, 7 figures(Supplementary Information). - Accepted for publication in npg: 2D materials and applications and reformatted to its standard. - Updated co-authors and references. - Title and abstract are modified for clarity. - Errors have been corrected, npg: 2D materials and applications (2018)

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Authors: Bingchen Deng, Vy Tran, Hao Jiang, Cheng Li, Yujun Xie, Qiushi Guo, Xiaomu Wang, He Tian, Han Wang, Judy J. Cha, Qiangfei Xia, Li Yang, Fengnian Xia

Abstract: Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that… ▽ More Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometer is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we demonstrate the tuning of bandgap in intrinsic black phosphorus using an electric field directly and reveal the unique thickness-dependent bandgap tuning properties, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10-nm-thick black phosphorus in which the field-induced potential difference across the film dominates over the interlayer coupling, we continuously tune its bandgap from ~300 to below 50 milli-electron volts, using a moderate displacement field up to 1.1 volts per nanometer. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and topological nodal semimetals. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Journal ref: Nat. Commun. 8, 14474 (2017)

Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation

Authors: J. M. Woods, J. Shen, P. Kumaravadivel, Y. Pang, Y. Xie, G. A. Pan, M. Li, E. I. Altman, L. Lu, J. J. Cha

Abstract: Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Here, using semimetallic $WTe_2$ that exhibits large magnetoresistance, we show that surface oxidation… ▽ More Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Here, using semimetallic $WTe_2$ that exhibits large magnetoresistance, we show that surface oxidation and Fermi level pinning degrade the transport properties of thin $WTe_2$ flakes significantly. With decreasing $WTe_2$ flake thickness, we observe a dramatic suppression of the large magnetoresistance. This is explained by fitting a two-band model to the transport data, which shows that mobility of the electron and hole carriers decreases significantly for thin flakes. The microscopic origin of this mobility decrease is attributed to a ~ 2 nm-thick amorphous surface oxide layer that introduces disorder. The oxide layer also shifts the Fermi level by ~ 300 meV at the $WTe_2$ surface. However, band bending due to this Fermi level shift is not the dominant cause for the suppression of magnetoresistance as the electron and hole carrier densities are balanced down to ~ 13 nm based on the two-band model. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials. △ Less

Submitted 18 June, 2016; originally announced June 2016.

Comments: 4 Figures

Fast Fabrication of Sub-200-nm Nanogrooves using Liquid Crystal Material

Authors: Dae Seok Kim, Yun Jeong Cha, Min-Jun Gim, Dong Ki Yoon

Abstract: Self-assembly of soft materials attracts keen interest for patterning applications owing to its ease and spontaneous behavior. We report the fabrication of nanogrooves using sublimation and recondensation of liquid crystal (LC) materials. First, well-aligned smectic LC structures are obtained on the micron-scale topographic patterns of the microchannel; then the sublimation and recondensation proc… ▽ More Self-assembly of soft materials attracts keen interest for patterning applications owing to its ease and spontaneous behavior. We report the fabrication of nanogrooves using sublimation and recondensation of liquid crystal (LC) materials. First, well-aligned smectic LC structures are obtained on the micron-scale topographic patterns of the microchannel; then the sublimation and recondensation process directly produces nanogrooves having sub-200-nm scale. The entire process can be completed in less than 30 min. After it is replicated using an ultraviolet-curable polymer, our platform can be used as an alignment layer to control other guest LC materials. △ Less

Submitted 25 April, 2016; originally announced April 2016.

Comments: 5 figures and 2 supporting imformation, in ACS Applied Materials & Interfaces 2016

Chiral nematic self-assembly of minimally surface damaged chitin nanofibrils and its load bearing functions

Authors: Dongyeop X. Oh, Yun Jeong Cha, Hoang-Linh Nguyen, Hwa Heon Je, Yong Seok Jho, Dong Soo Hwang, Dong Ki Yoon

Abstract: Chitin is one of the most abundant biomaterials in nature, with 10^10 tons produced annually as hierarchically organized nanofibril fillers to reinforce the exoskeletons of arthropods. This green and cheap biomaterial has attracted great attention due to its potential application to reinforce biomedical materials. Despite that, its practical use is limited since the extraction of chitin nanofibril… ▽ More Chitin is one of the most abundant biomaterials in nature, with 10^10 tons produced annually as hierarchically organized nanofibril fillers to reinforce the exoskeletons of arthropods. This green and cheap biomaterial has attracted great attention due to its potential application to reinforce biomedical materials. Despite that, its practical use is limited since the extraction of chitin nanofibrils requires surface modification involving harsh chemical treatments, leading to difficulties in reproducing their natural prototypal hierarchical structure, i.e. chiral nematic phase. Here, we develop a chemical etching-free approach using calcium ions, called natural way, to disintegrate the chitin nanofibrils while kee** the essential moiety for the self-assembly, ultimately resulting in the reproduction of chitins natural chiral structure in a polymeric matrix. This chiral chitin nanostructure exceptionally toughens the composite. Our resultant chiral nematic phase of chitin materials can contribute to the understanding and use of the reinforcing strategy in nature. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Comments: 29 pages, 4 figures

Journal ref: Sci. Rep., 2016, 6, 23245

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

Authors: He Tian, Qiushi Guo, Yunjun Xie, Huan Zhao, Cheng Li, Judy J. Cha, Fengnian Xia, Han Wang

Abstract: Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging f… ▽ More Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging from perception and recognition, to memory and reasoning. Realizing such heterogeneity in synaptic electronics is critical towards building artificial neural network with the potential for achieving the level of complexity in biological systems. However, such intrinsic heterogeneity has been very challenging to realize in current synaptic devices. Here, we demonstrate the first black phosphorus (BP) synaptic device, which offers intrinsic anisotropy in its synaptic characteristics directly resulting from its low crystal symmetry. The charge transfer between the 2-nm native oxide of BP and the BP channel is utilized to achieve the synaptic behavior. Key features of biological synapses such as long-term plasticity with heterogeneity, including long-term potentiation/depression and spike-timing-dependent plasticity, are mimicked. With the anisotropic BP synaptic devices, we also realize a simple compact heterogeneous axon-multi-synapses network. This demonstration represents an important step towards introducing intrinsic heterogeneity to artificial neuromorphic systems. △ Less

Submitted 12 March, 2016; originally announced March 2016.

Comments: 24 pages, 7 figures, Advanced Materials, In press

Structural Phase Transition and Carrier Density Tuning in SnSexTe1-x Nanoplates for Topological Crystalline Insulators

Authors: Jie Shen, John M. Woods, Y. Xie, M. D. Morales-Acosta, Judy J. Cha

Abstract: For topological insulators and topological crystalline insulators (TCIs), their exotic surface states are promising for fundamental condensed matter physics research as well as future electronics such as low-dissipation electronics and spintronics. However, the high bulk carrier density that often dominates the transport property is the major materials challenge, critically hindering our ability t… ▽ More For topological insulators and topological crystalline insulators (TCIs), their exotic surface states are promising for fundamental condensed matter physics research as well as future electronics such as low-dissipation electronics and spintronics. However, the high bulk carrier density that often dominates the transport property is the major materials challenge, critically hindering our ability to study and manipulate the surface states. In this manuscript, we demonstrate an alloying strategy, SnSexTe1-x, to effectively reduce the bulk carrier density. As long as SnSexTe1-x remains in the cubic crystal structure, it is predicted to be a TCI. We show systematic decrease of the bulk carrier density with the increasing Se concentration, demonstrating that the alloying principle works. In addition, we map out the phase diagram of the cubic to the orthorhombic structural transition as a function of the Se concentration. This was made possible by studying alloy nanoplates which remain single-crystalline and is either in the cubic or the orthorhombic phase, in contrast to bulk alloys that would exhibit polycrystalline grains. Lastly, we investigate systematically the ferroelectric transition associated with the structural transition from the cubic to the rhombohedral phase for SnSexTe1-x. This is the first ferroelectric transition study of the alloy system SnSexTe1-x. △ Less

Submitted 7 March, 2016; originally announced March 2016.

Comments: 25 pages, 4 figures

Controlling Gaussian and mean curvatures at microscale by sublimation and condensation of smectic liquid crystals

Authors: Dae Seok Kim, Yun Jeong Cha, Mun Ho Kim, Oleg D. Lavrentovich, Dong Ki Yoon

Abstract: Soft materials with layered structure such as membranes, block copolymers, and smectics exhibit intriguing morphologies with nontrivial curvatures. We report on restructuring the Gaussian and mean curvatures of smectic A films with free surface in the process of sintering, i.e. resha** at elevated temperatures. The pattern of alternating patches of negative, zero, and positive mean curvature of… ▽ More Soft materials with layered structure such as membranes, block copolymers, and smectics exhibit intriguing morphologies with nontrivial curvatures. We report on restructuring the Gaussian and mean curvatures of smectic A films with free surface in the process of sintering, i.e. resha** at elevated temperatures. The pattern of alternating patches of negative, zero, and positive mean curvature of the air-smectic interface has a profound effect on the rate of sublimation. As a result of sublimation, condensation, and restructuring, initially equilibrium smectic films with negative and zero Gaussian curvature are transformed into structures with pronounced positive Gaussian curvature of layers packing, seldom seen in samples obtained by cooling from the isotropic melt. The observed relationship between the curvatures, bulk elastic behaviour, and interfacial geometries in sintering of smectic liquid crystals paves the way for new approaches to control soft morphologies at micron and submicron scales. △ Less

Submitted 24 November, 2015; originally announced November 2015.

Comments: 34pages, 7 figures and supplementary information with 9 figures and 1 table

Synthesis of thin-film black phosphorus on a flexible substrate

Authors: Xuesong Li, Bingchen Deng, Xiaomu Wang, Sizhe Chen, Michelle Vaisman, Shun-ichiro Karato, Grace Pan, Minjoo Larry Lee, Judy Cha, Han Wang, Fengnian Xia

Abstract: We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a… ▽ More We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2/Vs, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film black phosphorus. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: 2D Materials 2, 031002 (2015)

Topological Crystalline Insulator Nanostructures

Authors: Jie Shen, Judy J. Cha

Abstract: Topological crystalline insulators are topological insulators whose surface states are protected by the crystalline symmetry, instead of the time reversal symmetry. Similar to the first generation of three-dimensional topological insulators such as Bi2Se3 and Bi2Te3, topological crystalline insulators also possess surface states with exotic electronic properties such as spin-momentum locking and D… ▽ More Topological crystalline insulators are topological insulators whose surface states are protected by the crystalline symmetry, instead of the time reversal symmetry. Similar to the first generation of three-dimensional topological insulators such as Bi2Se3 and Bi2Te3, topological crystalline insulators also possess surface states with exotic electronic properties such as spin-momentum locking and Dirac dispersion. Experimentally verified topological crystalline insulators to date are SnTe, Pb1-xSnxSe, and Pb1-xSnxTe. Because topological protection comes from the crystal symmetry, magnetic impurities or in-plane magnetic fields are not expected to open a gap in the surface states in topological crystalline insulators. Additionally, because they are cubic structure instead of layered structure, branched structures or strong coupling with other materials for large proximity effects are possible, which are difficult with layered Bi2Se3 and Bi2Te3. Thus, additional fundamental phenomena inaccessible in three-dimensional topological insulators can be pursued. In this review, topological crystalline insulator SnTe nanostructures will be discussed. For comparison, experimental results based on SnTe thin films will be covered. Surface state properties of topological crystalline insulators will be discussed briefly. △ Less

Submitted 20 October, 2014; originally announced October 2014.

Comments: Accepted Manuscript Nanoscale, 2014

Journal ref: Nanoscale 6 (23), 14133-14140, 2014

Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility

Authors: Jie Shen, Yujun Xie, Judy J. Cha

Abstract: Indium (In) do** in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, InxSn1-xTe, with x ranging from 0 to 0.1 and show they superconduct. More importan… ▽ More Indium (In) do** in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, InxSn1-xTe, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In do** reduces the bulk mobility of InxSn1-xTe such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in InxSn1-xTe nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors. △ Less

Submitted 21 January, 2015; v1 submitted 15 October, 2014; originally announced October 2014.

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Authors: Jie Shen, Yeonwoong Jung, Ankit S. Disa, Fred J. Walker, Charles H. Ahn, Judy J. Cha

Abstract: SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morpholog… ▽ More SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with lateral dimensions spanning tens of microns and thicknesses of a hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high temperature rock salt to low temperature rhombohedral structure. For nanoplates with very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Comments: Nano Lett., Article ASAP,2014

Journal ref: Nano letters 14 (7), 4183-4188, 2014

Ultrafast zero balance of the oscillator-strength sum rule in graphene

Authors: Jaeseok Kim, Seong Chu Lim, Seung ** Chae, Inhee Maeng, Younghwan Choi, Soonyoung Cha, Young Hee Lee, Hyunyong Choi

Abstract: Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating th… ▽ More Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating this question due to the linear Dirac-like energy dispersion. Here, we employed both ultrafast terahertz and optical spectroscopy to directly monitor the transient oscillator-strength balancing between quasi-free low-energy oscillators and high-energy Fermi-edge ones. Upon photo-excitation of hot Dirac fermions, we observed that the ultrafast depletion of high-energy oscillators precisely complements the increased terahertz absorption oscillators. Our results may provide an experimental priori to understand, for example, the intrinsic free-carrier dynamics to the high-energy photo-excitation, responsible for optoelectronic operation such as graphene-based phototransistor or solar-energy harvesting devices. △ Less

Submitted 10 September, 2013; originally announced September 2013.

One-dimensional helical transport in topological insulator nanowire interferometers

Authors: Seung Sae Hong, Yi Zhang, Judy J. Cha, Xiao-Liang Qi, Yi Cui

Abstract: The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the helical electron transport is a crucial step to both physics and device applications of topological insulators. Topological insulator nanowires, of which spin-texture… ▽ More The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the helical electron transport is a crucial step to both physics and device applications of topological insulators. Topological insulator nanowires, of which spin-textured surface electrons form 1D band manipulated by enclosed magnetic flux, offer a unique nanoscale platform to realize quantum transport of spin-momentum locking nature. Here, we report an observation of a topologically protected 1D mode of surface electrons in topological insulator nanowires existing at only two values of half magnetic quantum flux ($\pm$h/2e) due to a spin Berry's phase ($π$). The helical 1D mode is robust against disorder but fragile against a perpendicular magnetic field breaking time-reversal-symmetry. This result demonstrates a device with robust and easily accessible 1D helical electronic states from 3D topological insulators, a unique nanoscale electronic system to study topological phenomena. △ Less

Submitted 2 April, 2014; v1 submitted 6 March, 2013; originally announced March 2013.

Comments: 5 figures

Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor

Authors: Myong Chol Pak, Kwang-Il Kim, Hak Chol Pak, Chol Won Ri, Sang Jun Cha

Abstract: In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase g… ▽ More In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase gets lower and approaches to the equilibrium state. Additionally, the higher interface conductivity, the weaker spin injection efficiency, and the transmission due to Fermi energy of spin up and spin down is different from each other. In the same structure, the spin injection efficiency changes depending on the magnetic field, and the spin injection efficiency vibrates sensitively according to the magnetic field. In TI / DMS heterogeneous structure, the spin current changes according to magnetic field were investigated. Here, when the magnetic field is low, the spin current oscillates, and as the magnetic field increases, the vibration is attenuated. It also decreases with increasing temperature and weakens vibrations. This is due to the competitive effect of the chiral properties of Dirac type quasiparticles in the topological insulator and the unique properties of exchange interaction between electrons and ions in DMS. This result allows us to expect the possibility of spintronic devices with high sensitivity to magnetic field. △ Less

Submitted 27 November, 2020; v1 submitted 11 September, 2012; originally announced September 2012.

Comments: 11 pages, 4 figures

Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

Authors: Seung Sae Hong, Judy J. Cha, Desheng Kong, Yi Cui

Abstract: A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report… ▽ More A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. △ Less

Submitted 12 September, 2011; originally announced September 2011.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Nature Communications 3, 757 (2012)

Conformal symmetry and non-relativistic second order fluid dynamics

Authors: **gyi Chao, Thomas Schaefer

Abstract: We study the constraints imposed by conformal symmetry on the equations of fluid dynamics at second order in gradients of the hydrodynamic variables. At zeroth order conformal symmetry implies a constraint on the equation of state, E=2/3 P, where E is the energy density and P is the pressure. At first order, conformal symmetry implies that the bulk viscosity must vanish. We show that at second ord… ▽ More We study the constraints imposed by conformal symmetry on the equations of fluid dynamics at second order in gradients of the hydrodynamic variables. At zeroth order conformal symmetry implies a constraint on the equation of state, E=2/3 P, where E is the energy density and P is the pressure. At first order, conformal symmetry implies that the bulk viscosity must vanish. We show that at second order conformal invariance requires that two-derivative terms in the stress tensor must be traceless, and that it determines the relaxation of dissipative stresses to the Navier-Stokes form. We verify these results by solving the Boltzmann equation at second order in the gradient expansion. We find that only a subset of the terms allowed by conformal symmetry appear. △ Less

Submitted 24 August, 2011; originally announced August 2011.

Comments: 25 pages

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3

Authors: Desheng Kong, Yulin Chen, Judy J. Cha, Qianfan Zhang, James G. Analytis, Keji Lai, Zhongkai Liu, Seung Sae Hong, Kristie J. Koski, Sung-Kwan Mo, Zahid Hussain, Ian R. Fisher, Zhi-Xun Shen, Yi Cui

Abstract: Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurem… ▽ More Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental do** which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics. △ Less

Submitted 4 July, 2011; originally announced July 2011.

Comments: 7 pages, 4 figures

Journal ref: Nature Nanotechnology 6, 705-709 (2011)

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Authors: Desheng Kong, Judy J. Cha, Keji Lai, Hailin Peng, James G. Analytis, Stefan Meister, Yulin Chen, Hai-Jun Zhang, Ian R. Fisher, Zhi-Xun Shen, Yi Cui

Abstract: Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type do** after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental do** process. Syste… ▽ More Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type do** after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental do** process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type do** at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements. △ Less

Submitted 18 February, 2011; originally announced February 2011.

Journal ref: ACS Nano 5 (6), 4698-4703 (2011)

Controlled Growth of ZnO Nanowire, Nanowall, and Hybrid Nanostructures on Graphene for Piezoelectric Nanogenerators

Authors: Brijesh Kumar, Keun Young Lee, Hyun-Kyu Park, Seung ** Chae, Young Hee Lee, Sang-Woo Kim

Abstract: Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer… ▽ More Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer flatness with π electrons. Here, we report that by using graphene directly as a substrate, vertically well-aligned ZnO nanowires and nanowalls were obtained systematically by controlling Au catalyst thickness and growth time, without invoking significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 oC. We further demonstrate a piezoelectric nanogenerator that was fabricated from the vertically aligned nanowire-nanowall ZnO hybrid/graphene structure generates a new type of direct current. △ Less

Submitted 1 February, 2011; originally announced February 2011.