Showing 1–12 of 12 results for author: Chang, Y H

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Authors: Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar, Jason T. Dong, Shinichi Nishihaya, Yu Hao Chang, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α… ▽ More $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk do** or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response. △ Less

Submitted 29 November, 2023; v1 submitted 27 November, 2023; originally announced November 2023.

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors: Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm

Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an… ▽ More Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. △ Less

Submitted 16 May, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Tuning the Band Topology of GdSb by Epitaxial Strain

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Aaron N. Engel, Shoaib Khalid, Connor P. Dempsey, Mihir Pendharkar, Yu Hao Chang, Shinichi Nishihaya, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b… ▽ More Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature. △ Less

Submitted 18 April, 2023; v1 submitted 28 November, 2022; originally announced November 2022.

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Mihir Pendharkar, Aaron N. Engel, Jason T. Dong, Shoaib Khalid, Yu Hao Chang, Taozhi Guo, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin… ▽ More Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. △ Less

Submitted 25 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.

Report number: Phys. Rev. Materials 6, L121201

Journal ref: Phys. Rev. Materials 6, L121201 (2022)

Generation of ground state structures and electronic properties of ternary Al$_x$Ti$_y$Ni$_z$ clusters (x+y+z=6) with a two-stage DFT global search approach

Authors: Pin Wai Koh, Tiem Leong Yoon, Thong Leng Lim, Yee Hui Robin Chang, Eong Sheng Goh

Abstract: The structural and electronic properties of ternary AlxTiyNiz clusters, where x, y, and z are integers and x + y + z = 6 are investigated. Both SVWN and B3LYP exchange-correlation functionals are employed in a two-stage density functional theory (DFT) calculations to generate these clusters. In the first stage, a minimum energy cluster structure is generated by an unbiased global search algorithm… ▽ More The structural and electronic properties of ternary AlxTiyNiz clusters, where x, y, and z are integers and x + y + z = 6 are investigated. Both SVWN and B3LYP exchange-correlation functionals are employed in a two-stage density functional theory (DFT) calculations to generate these clusters. In the first stage, a minimum energy cluster structure is generated by an unbiased global search algorithm coupled with a DFT code using a light exchange-correlation functional and small basis sets. In the second stage, the obtained cluster structure is further optimized by another round of global minimization search coupled with a DFT calculator using a heavier exchange-correlation functional and more costly basis set. Electronic properties of the structures are illustrated in the form of a ternary diagram. Our DFT calculations find that the stability of the clusters increases with the increment in the number of constituent nickel atoms. These results provide a new insight to the structure, stability, chemical order and electronic properties for the ternary alloy nanoclusters. △ Less

Submitted 8 July, 2019; v1 submitted 4 April, 2019; originally announced April 2019.

Comments: 30 pages. arXiv admin note: substantial text overlap with arXiv:1810.13343

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting

Authors: Yi-Ting Wang, Gil-Ho Kim, C. F. Huang, Shun-Tsung Lo, Wei-Jen Chen, J. T. Nicholls, Li-Hung Lin, D. A. Ritchie, Y. H. Chang, C. -T. Liang, B. P. Dolan

Abstract: We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the form… ▽ More We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting. △ Less

Submitted 5 September, 2012; originally announced September 2012.

Comments: 22 pages

Journal ref: J. Phys.: Condens. Matter 24 405801 (2012)

Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Authors: Kuang Yao Chen, Y. H. Chang, C. -T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, Li-Hung Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, Jau-Yang Wu, Sheng-Di Lin

Abstract: Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and tra… ▽ More Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation. △ Less

Submitted 11 February, 2008; originally announced February 2008.

Comments: 11 pages, 7 figures

Journal ref: J. Phys.: Condens. Matter 20 (2008) 295223.

An experimental study on $Γ$(2) modular symmetry in the quantum Hall system with a small spin-splitting

Authors: C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. -T. Liang, D. R. Hang, H. H. Lin

Abstract: Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quant… ▽ More Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quantization. [B. P. Dolan, Phys. Rev. B 62, 10278.] Universal scaling is found under the reduction of the modular symmetry. It is also shown that the Hall conductivity could still be governed by the scaling law when the semicircle law and the scaling on the longitudinal conductivity are invalid. *corresponding author:[email protected] △ Less

Submitted 26 December, 2006; v1 submitted 13 September, 2006; originally announced September 2006.

Comments: The revised manuscript has been published in J. Phys.: Condens. Matter

Journal ref: Journal of Physics: Condensed Matter 19, 026205 (2007)

Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect

Authors: D. R. Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, D. A. Ritchie, I. Farrer, Y. W. Zhang, C. -T. Liang, Y. H. Chang

Abstract: Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that modifications to the particle-hole transformation should be considered under the coupling between the paired Landau bands. Our study indicates that such a transformation… ▽ More Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that modifications to the particle-hole transformation should be considered under the coupling between the paired Landau bands. Our study indicates that such a transformation should be modified either when the Zeeman gap is much smaller than the cyclotron gap, or when these two gaps are comparable. △ Less

Submitted 24 August, 2005; originally announced August 2005.

Comments: 8 pages, 4 figures

Journal ref: The main results are published in Microelectron. J. 36, 469 (2005).

On the low-field insulator-quantum Hall conductor transitions

Authors: Tsai-Yu Huang, J. R. Juang, C. F. Huang, Gil-Ho Kim, Chao-** Huang, C. -T. Liang, Y. H. Chang, Y. F. Chen, Y. Lee, D. A. Ritchie

Abstract: We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field local… ▽ More We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition. △ Less

Submitted 12 March, 2005; originally announced March 2005.

Comments: Our experimental results are inconsistent with Huckestein's argument [PRL 84, 3141 (2000)]

Journal ref: Physica E 22, 240-243 (2004)

A study on the universality of the magnetic-field-induced phase transitions in the two-dimensional electron system in an AlGaAs/GaAs heterostructure

Authors: C. F. Huang, Y. H. Chang, H. H. Cheng, C. -T. Liang, G. J. Hwang

Abstract: Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, an… ▽ More Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, and universal scaling behavior was found in the P-P transition after map** it to the I-QH transition by the Landau-level addition transformation. We pointed out that in order to get a correct critical exponent, it is essential that the scaling analysis must be performed near the critical point. And with proper analysis, we found that the P-P transition and the insulator quantum Hall conductor transitions are of the same universal class. △ Less

Submitted 10 April, 2004; originally announced April 2004.

Comments: 11 pages, 3 figures

Journal ref: Physica E 22, 232 (2004)

Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System

Authors: C. T. Liang, C. F. Huang, Yu-Ming Cheng, Tsai-Yu Huang, Y. H. Chang, Y. F. Chen

Abstract: We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. T… ▽ More We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<ν<5$, there is a temperature-independent point in $ρ_{xx} (B)$, $ρ_{xy} (B)$, $σ_{xx}$, and $σ_{xy}$ which corresponds to a boundary of the quantum phase transition. △ Less

Submitted 23 March, 2002; v1 submitted 18 January, 2002; originally announced January 2002.

Comments: We correct the errors about the formats for figures in the PDF file

Journal ref: Chinese Journal of Physics, 39, L305 (2001)