Showing 1–50 of 192 results for author: Chang, S

A Novel Interface Database of Graphene Nanoribbon from Density Functional Theory

Authors: Ao Wu, Jiangxue Huang, Qijun Huang, ** He, Hao Wang, Sheng Chang

Abstract: Interfaces play a crucial role in determining the overall performance and functionality of electronic devices and systems. Driven by the data science, machine learning (ML) reveals excellent guidance for material selection and device design, in which an advanced database is crucial for training models with state-of-the-art (SOTA) precision. However, a systematic database of interfaces is still in… ▽ More Interfaces play a crucial role in determining the overall performance and functionality of electronic devices and systems. Driven by the data science, machine learning (ML) reveals excellent guidance for material selection and device design, in which an advanced database is crucial for training models with state-of-the-art (SOTA) precision. However, a systematic database of interfaces is still in its infancy due to the difficulties in collecting raw data in experiment and the expensive first-principles computational cost in density functional theory (DFT). In this paper, we construct ample interface structures of graphene nanoribbons (GNR), whose interfacial morphology can be precisely fabricated based on specific molecular precursors. The GNR interfaces serve as promising candidates since their bandgaps can be modulated. Their physical properties including energy bands and density of states (DOS) maps are obtained under reasonable calculation parameters. This database can provide theoretical guidance for the design of electronic devices and accelerate the ML study of various physical quantities. △ Less

Submitted 19 December, 2023; v1 submitted 29 November, 2023; originally announced November 2023.

Electrical conductivity enhancement of epitaxially grown TiN thin films

Authors: Yeong Gwang Khim, Beom** Park, ** Eun Heo, Young Hun Khim, Young Rok Khim, Minsun Gu, Tae Gyu Rhee, Seo Hyoung Chang, Moonsup Han, Young Jun Chang

Abstract: Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of sur… ▽ More Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications. △ Less

Submitted 22 October, 2023; originally announced October 2023.

Comments: 14 pages, 3 figures

Journal ref: Journal of the Korean Physical Society 82, 486 (2023)

Atomic arrangement of van der Waals heterostructures using X-ray scattering and crystal truncation rod analysis

Authors: Ryung Kim, Byoung Ki Choi, Kyeong Jun Lee, Hyuk ** Kim, Hyun Hwi Lee, Tae Gyu Rhee, Yeong Gwang Khim, Young Jun Chang, Seo Hyoung Chang

Abstract: Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bi… ▽ More Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bilayer graphene (BLG) hetero-structures grown on a 6H-SiC(0001) substrate. Using non-destructive CTR analysis, we were able to obtain electron density profiles and detailed crystal structure of the VSe2/BLG heterostructures. Specifically, the out-of-plane lattice parameters of each VSe2 layer were modulated by the interface compared to that of the bulk VSe2 1T phase. The atomic arrangement of the VSe2/BLG heterostructure provides deeper understanding and insight for elucidating the magnetic properties of the van der Waals heterostructure. △ Less

Submitted 22 October, 2023; originally announced October 2023.

Comments: 17 pages, 4 figures

Journal ref: Current Applied Physics 46, 70 (2023)

Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films

Authors: Seokje Lee, Muhammad S. Abbas, Dongha Yoo, Keundong Lee, Tobiloba G. Fabunmi, Eunsu Lee, Han Ik Kim, Imhwan Kim, Daniel Jang, Sangmin Lee, Jusang Lee, Ki-Tae Park, Changgu Lee, Miyoung Kim, Yun Seog Lee, Celesta S. Chang, Gyu-Chul Yi

Abstract: We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal… ▽ More We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices. △ Less

Submitted 5 December, 2023; v1 submitted 8 October, 2023; originally announced October 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright 2023 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03333

Quantum Simulation of the Bosonic Kitaev Chain

Authors: J. H. Busnaina, Z. Shi, A. McDonald, D. Dubyna, I. Nsanzineza, Jimmy S. C. Hung, C. W. Sandbo Chang, A. A. Clerk, C. M. Wilson

Abstract: Superconducting quantum circuits are a natural platform for quantum simulations of a wide variety of important lattice models describing topological phenomena, spanning condensed matter and high-energy physics. One such model is the bosonic analogue of the well-known fermionic Kitaev chain, a 1D tight-binding model with both nearest-neighbor hop** and pairing terms. Despite being fully Hermitian… ▽ More Superconducting quantum circuits are a natural platform for quantum simulations of a wide variety of important lattice models describing topological phenomena, spanning condensed matter and high-energy physics. One such model is the bosonic analogue of the well-known fermionic Kitaev chain, a 1D tight-binding model with both nearest-neighbor hop** and pairing terms. Despite being fully Hermitian, the bosonic Kitaev chain exhibits a number of striking features associated with non-Hermitian systems, including chiral transport and a dramatic sensitivity to boundary conditions known as the non-Hermitian skin effect. Here, using a multimode superconducting parametric cavity, we implement the bosonic Kitaev chain in synthetic dimensions. The lattice sites are mapped to frequency modes of the cavity, and the $\textit{in situ}$ tunable complex hop** and pairing terms are created by parametric pum** at the mode-difference and mode-sum frequencies, respectively. We experimentally demonstrate important precursors of nontrivial topology and the non-Hermitian skin effect in the bosonic Kitaev chain, including chiral transport, quadrature wavefunction localization, and sensitivity to boundary conditions. Our experiment is an important first step towards exploring genuine many-body non-Hermitian quantum dynamics. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Journal ref: Nature Communications 15, 3065 (2024)

First-principles Prediction of Potential Candidate Materials MCu$_3$X$_4$ (M = V, Nb, Ta; X = S, Se, Te) for Neuromorphic Computing

Authors: Baoxing Zhai, Ruiqing Cheng, Tianxing Wang, Li Liu, Lei Yin, Yao Wen, Hao Wang, Sheng Chang, Jun He

Abstract: Inspired by the neuro-synaptic frameworks in the human brain, neuromorphic computing is expected to overcome the bottleneck of traditional von-Neumann architecture and be used in artificial intelligence. Here, we predict a class of potential candidate materials, MCu$_3$X$_4$ (M = V, Nb, Ta; X = S, Se, Te), for neuromorphic computing applications through first-principles calculations based on densi… ▽ More Inspired by the neuro-synaptic frameworks in the human brain, neuromorphic computing is expected to overcome the bottleneck of traditional von-Neumann architecture and be used in artificial intelligence. Here, we predict a class of potential candidate materials, MCu$_3$X$_4$ (M = V, Nb, Ta; X = S, Se, Te), for neuromorphic computing applications through first-principles calculations based on density functional theory. We find that when MCu$_3$X$_4$ are inserted with Li atom, the systems would transform from semiconductors to metals due to the considerable electron filling [~0.8 electrons per formula unit (f.u.)] and still maintain well structural stability. Meanwhile, the inserted Li atom also has a low diffusion barrier (~0.6 eV/f.u.), which ensures the feasibility to control the insertion/extraction of Li by gate voltage. These results establish that the system can achieve the reversible switching between two stable memory states, i.e., high/low resistance state, indicating that it could potentially be used to design synaptic transistor to enable neuromorphic computing. Our work provides inspiration for advancing the search of candidate materials related to neuromorphic computing from the perspective of theoretical calculations. △ Less

Submitted 28 April, 2023; originally announced April 2023.

Comments: 28+8 pages, 18 figures

Journal ref: Phys. Rev. Applied 19, 054045 (2023)

Measures of Spin Ordering in the Potts Model with a Generalized External Magnetic Field

Authors: Shu-Chiuan Chang, Robert Shrock

Abstract: We formulate measures of spin ordering in the $q$-state ferromagnetic Potts model in a generalized external magnetic field that favors or disfavors spin values in a subset $I_s = \{1,...,s\}$ of the total set of $q$ values. The results are contrasted with the corresponding measures of spin ordering in the case of a conventional external magnetic field that favors or disfavors a single spin value o… ▽ More We formulate measures of spin ordering in the $q$-state ferromagnetic Potts model in a generalized external magnetic field that favors or disfavors spin values in a subset $I_s = \{1,...,s\}$ of the total set of $q$ values. The results are contrasted with the corresponding measures of spin ordering in the case of a conventional external magnetic field that favors or disfavors a single spin value out of total set of $q$ values. Some illustrative calculations are included. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 22 pages, 6 figures, accepted for publication in Physica A

Report number: Stony Brook report YITP-SB-2022-27, NCKU report

Journal ref: Physica A 613, 128532 (2023)

Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy

Authors: S. Shrestha, C. S. Chang, S. Lee, N. L. Kothalawala, D. Y. Kim, M. Minola, J. Kim, A. Seo

Abstract: Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samp… ▽ More Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 6 pages, 3 figures

Experimental verification of polar structures in ultrathin BaTiO_{3} layers using resonant x-ray reflectivity

Authors: Kook Tae Kim, Yeong Jae Shinb, Sung-** Kang, Ryung Kim, Miyoung Kim, Tae Won Noh, Yongseong Choi, Seo Hyoung Chang, Dong Ryeol Lee

Abstract: Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventio… ▽ More Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventional methods such as electrical measurements and piezoelectric response force microscopy are very limited due to leakage currents and the smallness of the ferroelectric signals. Here, we show that the ferroelectricity of ultrathin SrRuO3/BaTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates can be measured using resonant x-ray reflectivity (RXRR). This experimental technique can provide an element-specific electronic depth profile as well as increased sensitivity to Ti off-center displacements at the Ti K pre-edge. The depth-sensitivity of RXRR selectively detects the strong polarization dependence of the Ti pre-edge features of ultrathin BaTiO3 layers while discriminating the contribution of the SrTiO3 substrate. This technique verified that the BaTiO3 layer can be ferroelectric down to the lowest experimental limit of a critical thickness of 2.5 unit cells. Our results can open a novel way to explore ultrathin ferroelectric-based nano-electronic devices. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Comments: 26 pages, 5 figures

Direct Hydrogen Production from Water/Seawater by Irradiation/Vibration-Activated Using Defective Ferroelectric BaTiO3-x Nanoparticles

Authors: Yue Jiang, Cui Ying Toe, Sajjad S. Mofarah, Claudio Cazorla, Shery L. Y. Chang, Yanting Yin, Qi Zhang, Sean Lim, Yin Yao, Ruoming Tian, Yuan Wang, Tasmia Zaman, Hamidreza Arandiyan, Gunther G. Andersson, Jason Scott, Pramod Koshy, Danyang Wang, Charles C. Sorrell

Abstract: Hydrogen is a promising fossil-fuel alternative fuel owing to its environmentally neutral emissions and high energy density. However, the need for purified water and external power are critical hindrances to implementation of hydrogen production. The present work reveals the potential to overcome these shortcomings through piezo-photocatalysis of seawater using BaTiO3-x (BTO) nanoparticles. This m… ▽ More Hydrogen is a promising fossil-fuel alternative fuel owing to its environmentally neutral emissions and high energy density. However, the need for purified water and external power are critical hindrances to implementation of hydrogen production. The present work reveals the potential to overcome these shortcomings through piezo-photocatalysis of seawater using BaTiO3-x (BTO) nanoparticles. This material was made piezoelectrically active by annealing under different atmospheres, including O2, N2, Ar, and H2, the latter of which caused Ti4+ to Ti(4-x)+ multiple reductions and structural expansions that stabilized piezoelectric tetragonal BTO domains. The resultant defect equilibria combine ionic and electron effects, including Ti redox reactions, charge-compensating surface oxygen vacancy formation, and color centre alterations. Further, variety of experimental techniques revealed the effects of reduction on the energy band structure. A strong piezoelectric effect and the presence of self-polarization were confirmed by piezoresponse force microscopy, while simulation work clarified the role of vibration on band bending deriving from the former. The performance data contrasted H2 evolution using deionized (DI) water, simulated seawater, and natural seawater subjected to photocatalysis, piezocatalysis, and piezo-photocatalysis. An efficient H2 evolution rate of 132.4 micromol/g/h was achieved from DI water using piezo-photocatalysis for 5 h. In contrast, piezocatalysis for 2 h followed by piezo-photocatalysis for 3 h resulted in H2 evolution rates of 100.7 micromol/g/h for DI water, 63.4 micromol/g/h for simulated seawater, and 48.7 micromol/g/h for natural seawater. This work provides potential new strategies for large-scale green H2 production using abundant natural resources with conventional piezoelectric material while leveraging the effects of ions dissolved in seawater. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 34 pages, 9 figures

Hole Mobility Calculation for Monolayer Molybdenum Tungsten Alloy Disulfide

Authors: Ming-Ting Wu, Cheng-Hsien Yang, Yun-Fang Chung, Kuan-Ting Chen, Shu-Tong Chang

Abstract: A simple band model using higher order non-parabolic effect was adopted for single layer molybdenum tungsten alloy disulfide (i.e., $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$). The first-principles method considering $2\times2$ supercell was used to study band structure of single layer alloy $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$ and a simple band (i.e., effective mass approximation model, E… ▽ More A simple band model using higher order non-parabolic effect was adopted for single layer molybdenum tungsten alloy disulfide (i.e., $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$). The first-principles method considering $2\times2$ supercell was used to study band structure of single layer alloy $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$ and a simple band (i.e., effective mass approximation model, EMA) model with higher order non-parabolic effect was used to fit the first-principle band structures in order to calculate corresponding the hole mobility. In addition, we investigate the alloy scattering effect on the hole mobility of $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Journal ref: Journal of Nanoscience and Nanotechnology 20, 7175 (2020)

Band structure of molybdenum disulfide: from first principle to analytical band model

Authors: Cheng-Hsien Yang, Yun-Fang Chung, Yen-Shuo Su, Kuan-Ting Chen, Yi-Sheng Huang, Shu-Tong Chang

Abstract: A simple band model such as the effective mass approximation (EMA) can be used to quickly obtain the lower-energy region for the band structure of monolayer molybdenum disulfide. But the EMA band model cannot give the correct description for the band structure in the higher-energy region. To address this major issue, we propose an analytical band calculation (ABC) model to study monolayer molybden… ▽ More A simple band model such as the effective mass approximation (EMA) can be used to quickly obtain the lower-energy region for the band structure of monolayer molybdenum disulfide. But the EMA band model cannot give the correct description for the band structure in the higher-energy region. To address this major issue, we propose an analytical band calculation (ABC) model to study monolayer molybdenum disulfide. Important parameters of the ABC model are obtained by fitting the three-direction band structure of monolayer molybdenum disulfide obtained from the first-principles (FP) method. The proposed ABC model fits well with the FP band structure calculation result for monolayer molybdenum disulfide. We also use the ABC model to calculate physical quantities used in carrier transport such as density of states and group velocity. Our ABC model can be extended and further utilized for calculating the key physical quantities of ballistic transport of 2D semiconductor materials. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Journal ref: J. Comput. Electron. 21, 571-581 (2022)

First Principle Study for Optical Properties of TMDC/Graphene Heterostructures

Authors: Cheng-Hsien Yang, Shu-Tong Chang

Abstract: The transition-metal dichalcogenide (TMDC) in the family of $\mathrm{MX}_2$ ($\mathrm{M}=\mathrm{Mo},\mathrm{W}$; $\mathrm{X}=\mathrm{S},\mathrm{Se}$) and the graphene monolayer are atomically thin semiconductors and semimetal, respectively. The monolayer $\mathrm{MX}_2$ have been discovered as a new class of semiconductors for electronics and optoelectronics applications. Because of the hexagonal… ▽ More The transition-metal dichalcogenide (TMDC) in the family of $\mathrm{MX}_2$ ($\mathrm{M}=\mathrm{Mo},\mathrm{W}$; $\mathrm{X}=\mathrm{S},\mathrm{Se}$) and the graphene monolayer are atomically thin semiconductors and semimetal, respectively. The monolayer $\mathrm{MX}_2$ have been discovered as a new class of semiconductors for electronics and optoelectronics applications. Because of the hexagonal lattice structure of both the materials, $\mathrm{MX}_2$ and graphene are often combined with each other to make van der Waals heterostructures. Here, the $\mathrm{MX}_2/\mathrm{Gr}$ heterostructures are investigated theoretically based on the Density Functional Theory (DFT). The electronic structure and the optical properties of four different $\mathrm{MX}_2/\mathrm{Gr}$ heterostructures are computed. We systematically compare these $\mathrm{MX}_2/\mathrm{Gr}$ heterostructures for their complex permittivity, absorption coefficient, reflectivity and refractive index. △ Less

Submitted 14 June, 2022; v1 submitted 2 May, 2022; originally announced May 2022.

Journal ref: Photonics 9, 387 (2022)

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Authors: Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Kuan Qiao, Ki Seok Kim, Bo-In Park, Junseok Jeong, Menglin Zhu, Jun Min Suh, Yongmin Baek, You ** Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Haozhe Wang, Ling** Kong, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, **woo Hwang , et al. (4 additional authors not shown)

Abstract: Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to… ▽ More Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Absence of Friedel oscillations in the entanglement entropy profile of one-dimensional intrinsically gapless topological phases

Authors: Shun-Chiao Chang, Pavan Hosur

Abstract: Topological quantum matter is typically associated with gapped phases and edge modes protected by the bulk gap. In contrast, recent work (Phys. Rev. B 104, 075132) proposed intrinsically gapless topological phases that, in one dimension, carry protected edge modes only when the bulk is a gapless Luttinger liquid. The edge modes of such a topological Luttinger liquid (TLL) descend from a nonlocal s… ▽ More Topological quantum matter is typically associated with gapped phases and edge modes protected by the bulk gap. In contrast, recent work (Phys. Rev. B 104, 075132) proposed intrinsically gapless topological phases that, in one dimension, carry protected edge modes only when the bulk is a gapless Luttinger liquid. The edge modes of such a topological Luttinger liquid (TLL) descend from a nonlocal string order that is forbidden in gapped phases and whose precise form depends on the symmetry class of the system. In this work, we propose a powerful and unbiased entanglement-based smoking gun signature of the TLL. In particular, we show that the entanglement entropy profile of a TLL lacks Friedel oscillations that are invariably present in other gapless one dimensional phases such as ordinary Luttinger liquids, and argue that their absence is closely related to a long-ranged string order which is an intrinsic property of the TLL. Crucially, such a diagnostic is more robust against numerical errors and relatively easier to measure in experiments as it relies on the entanglement entropy rather than entanglement spectrum, unlike the entanglement-based diagnostics of gapped topological phases in one dimension. △ Less

Submitted 6 March, 2022; v1 submitted 18 January, 2022; originally announced January 2022.

Comments: References added

ImageMech: From image to particle spring network for mechanical characterization

Authors: Yuan Chiang, Ting-Wai Chiu, Shu-Wei Chang

Abstract: The emerging demand for advanced structural and biological materials calls for novel modeling tools that can rapidly yield high-fidelity estimation on materials properties in design cycles. Lattice spring model (LSM), a coarse-grained particle spring network, has gained attention in recent years for predicting the mechanical properties and giving insights into the fracture mechanism with high repr… ▽ More The emerging demand for advanced structural and biological materials calls for novel modeling tools that can rapidly yield high-fidelity estimation on materials properties in design cycles. Lattice spring model (LSM), a coarse-grained particle spring network, has gained attention in recent years for predicting the mechanical properties and giving insights into the fracture mechanism with high reproducibility and generalizability. However, to simulate the materials in sufficient detail for guaranteed numerical stability and convergence, most of the time a large number of particles are needed, greatly diminishing the potential for high-throughput computation and therewith data generation for machine learning frameworks. Here, we implement CuLSM, a GPU-accelerated CUDA C++ code realizing parallelism over the spring list instead of the commonly used spatial decomposition, which requires intermittent updates on the particle neighbor list. Along with the image-to-particle conversion tool Img2Particle, our toolkit offers a fast and flexible platform to characterize the elastic and fracture behaviors of materials, expediting the design process between additive manufacturing and computer-aided design. With the growing demand for new lightweight, adaptable, and multi-functional materials and structures, such tailored and optimized modeling platform has profound impacts, enabling faster exploration in design spaces, better quality control for 3D printing by digital twin techniques, and larger data generation pipelines for image-based generative machine learning models. △ Less

Submitted 24 February, 2022; v1 submitted 12 January, 2022; originally announced January 2022.

Journal ref: Front. Mater. 8:803875 (2022)

Encoding protein dynamic information in graph representation for functional residue identification

Authors: Yuan Chiang, Wei-Han Hui, Shu-Wei Chang

Abstract: Recent advances in protein function prediction exploit graph-based deep learning approaches to correlate the structural and topological features of proteins with their molecular functions. However, proteins in vivo are not static but dynamic molecules that alter conformation for functional purposes. Here we apply normal mode analysis to native protein conformations and augment protein graphs by co… ▽ More Recent advances in protein function prediction exploit graph-based deep learning approaches to correlate the structural and topological features of proteins with their molecular functions. However, proteins in vivo are not static but dynamic molecules that alter conformation for functional purposes. Here we apply normal mode analysis to native protein conformations and augment protein graphs by connecting edges between dynamically correlated residue pairs. In the multilabel function classification task, our method demonstrates a remarkable performance gain based on this dynamics-informed representation. The proposed graph neural network, ProDAR, increases the interpretability and generalizability of residue-level annotations and robustly reflects structural nuance in proteins. We elucidate the importance of dynamic information in graph representation by comparing class activation maps for hMTH1, nitrophorin, and SARS-CoV-2 receptor binding domain. Our model successfully learns the dynamic fingerprints of proteins and pinpoints the residues of functional impacts, with vast untapped potential for broad biotechnology and pharmaceutical applications. △ Less

Submitted 10 June, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Journal ref: Cell Reports Physical Science, Volume 3, Issue 7, 2022, 100975, ISSN 2666-3864

Tailoring Luminescent Properties of SrS:Ce by Modulating Defects: Sr-Deficiency and Na+ Do**

Authors: Shuqin Chang, Jipeng Fu, Xuan Sun, Guangcan Bai, Guoquan Liu, Kaina Wang, Ligang Xu, Qi Wei, Thomas Meier, Mingxue Tang

Abstract: Ce3+ doped SrS phosphors with a charge-compensating Na+ for light-emitting diode (LED) applications have been successfully synthesized via a solid-state reaction method, which can be indexed to rock-salt-like crystal structures of Fm-3m space group. SrS:(Ce3+)x(x=0.005-0.05) and SrS:(Ce3+)0.01,(Na+)y(y=0.005-0.030) phosphors were excited by 430nm UV-VIS light, associated to the 5d1-4f1 transition… ▽ More Ce3+ doped SrS phosphors with a charge-compensating Na+ for light-emitting diode (LED) applications have been successfully synthesized via a solid-state reaction method, which can be indexed to rock-salt-like crystal structures of Fm-3m space group. SrS:(Ce3+)x(x=0.005-0.05) and SrS:(Ce3+)0.01,(Na+)y(y=0.005-0.030) phosphors were excited by 430nm UV-VIS light, associated to the 5d1-4f1 transition of Ce3+. The composition-optimized SrS:(Ce3+)0.01,(Na+)0.015 phosphors showed an intense broad emission band at 430-700nm. The do** of Na+ was probed by solid-state nuclear magnetic resonance. The 430 nm pumped with white LED (w-LED) combining SrS:(Ce3+)0.01,(Na+)0.015 phosphors and Sr2Si5N8:Eu2+ phosphors shows a color-rendering index (Ra) of 89.7. The proposed strategy provides new avenues for design and realization of novel high color quality solid-state lighting emitting diodes (SS-LEDS). △ Less

Submitted 22 November, 2021; originally announced November 2021.

Comments: 22 pages, 8figures

MSC Class: C.1.1 ACM Class: C.1.1

Direct Geometric Probe of Singularities in Band Structure

Authors: Charles D. Brown, Shao-Wen Chang, Malte N. Schwarz, Tsz-Him Leung, Vladyslav Kozii, Alexander Avdoshkin, Joel E. Moore, Dan Stamper-Kurn

Abstract: The band structure of a crystal may have points where two or more bands are degenerate in energy and where the geometry of the Bloch state manifold is singular, with consequences for material and transport properties. Ultracold atoms in optical lattices have been used to characterize such points only indirectly, e.g., by detection of an Abelian Berry phase, and only at singularities with linear di… ▽ More The band structure of a crystal may have points where two or more bands are degenerate in energy and where the geometry of the Bloch state manifold is singular, with consequences for material and transport properties. Ultracold atoms in optical lattices have been used to characterize such points only indirectly, e.g., by detection of an Abelian Berry phase, and only at singularities with linear dispersion (Dirac points). Here, we probe band-structure singularities through the non-Abelian transformation produced by transport directly through the singular points. We prepare atoms in one Bloch band, accelerate them along a quasi-momentum trajectory that enters, turns, and then exits the singularities at linear and quadratic touching points of a honeycomb lattice. Measurements of the band populations after transport identify the winding numbers of these singularities to be 1 and 2, respectively. Our work opens the study of quadratic band touching points in ultracold-atom quantum simulators, and also provides a novel method for probing other band geometry singularities. △ Less

Submitted 16 September, 2022; v1 submitted 7 September, 2021; originally announced September 2021.

Journal ref: Science 377 1319-1322 (2022)

Exact Results for Average Cluster Numbers in Bond Percolation on Infinite-Length Lattice Strips

Authors: Shu-Chiuan Chang, Robert Shrock

Abstract: We calculate exact analytic expressions for the average cluster numbers $\langle k \rangle_{Λ_s}$ on infinite-length strips $Λ_s$, with various widths, of several different lattices, as functions of the bond occupation probability, $p$. It is proved that these expressions are rational functions of $p$. As special cases of our results, we obtain exact values of $\langle k \rangle_{Λ_s}$ and derivat… ▽ More We calculate exact analytic expressions for the average cluster numbers $\langle k \rangle_{Λ_s}$ on infinite-length strips $Λ_s$, with various widths, of several different lattices, as functions of the bond occupation probability, $p$. It is proved that these expressions are rational functions of $p$. As special cases of our results, we obtain exact values of $\langle k \rangle_{Λ_s}$ and derivatives of $\langle k \rangle_{Λ_s}$ with respect to $p$, evaluated at the critical percolation probabilities $p_{c,Λ}$ for the corresponding infinite two-dimensional lattices $Λ$. We compare these exact results with an analytic finite-size correction formula and find excellent agreement. We also analyze how unphysical poles in $\langle k \rangle_{Λ_s}$ determine the radii of convergence of series expansions for small $p$ and for $p$ near to unity. Our calculations are performed for infinite-length strips of the square, triangular, and honeycomb lattices with several types of transverse boundary conditions. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Comments: 29 pages, latex

Report number: NCKU - YITP-SB-2021-6

Journal ref: Phys. Rev. E 104, 044107 (2021)

Dynamical localization simulated on actual quantum hardware

Authors: Andrea Pizzamiglio, Su Yeon Chang, Maria Bondani, Simone Montangero, Dario Gerace, Giuliano Benenti

Abstract: Quantum computers are invaluable tools to explore the properties of complex quantum systems. We show that dynamical localization of the quantum sawtooth map, a highly sensitive quantum coherent phenomenon, can be simulated on actual, small-scale quantum processors. Our results demonstrate that quantum computing of dynamical localization may become a convenient tool for evaluating advances in quant… ▽ More Quantum computers are invaluable tools to explore the properties of complex quantum systems. We show that dynamical localization of the quantum sawtooth map, a highly sensitive quantum coherent phenomenon, can be simulated on actual, small-scale quantum processors. Our results demonstrate that quantum computing of dynamical localization may become a convenient tool for evaluating advances in quantum hardware performances. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Comments: 9 pages. 5 figures

Journal ref: Entropy 23, 654 (2021)

Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics

Authors: In Hak Lee, Byoung Ki Choi, Hyuk ** Kim, Min Jay Kim, Hu Young Jeong, Jong Hoon Lee, Seung-Young Park, Younghun Jo, Chanki Lee, Jun Woo Choi, Seong Won Cho, Suyuon Lee, Younghak Kim, Beom Hyun Kim, Kyeong Jun Lee, ** Eun Heo, Seo Hyoung Chang, Feng** Li, Bheema Lingam Chittari, Jeil Jung, Young Jun Chang

Abstract: Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}… ▽ More Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: 30 pages, 6 figures, accepted in ACS Applied Nano Materials

A Machine Learning Inversion Scheme for Determining Interaction from Scattering

Authors: Chi-Huan Tung, Shou-Yi Chang, Jan-Michael Carrillo, Bobby G. Sumpter, Changwoo Do, Wei-Ren Chen

Abstract: We outline a machine learning strategy for determining the effective interaction in the condensed phases of matter using scattering. Via a case study of colloidal suspensions, we showed that the effective potential can be probabilistically inferred from the scattering spectra without any restriction imposed by model assumptions. Comparisons to existing parametric approaches demonstrate the superio… ▽ More We outline a machine learning strategy for determining the effective interaction in the condensed phases of matter using scattering. Via a case study of colloidal suspensions, we showed that the effective potential can be probabilistically inferred from the scattering spectra without any restriction imposed by model assumptions. Comparisons to existing parametric approaches demonstrate the superior performance of this method in accuracy, efficiency, and applicability. This method can effectively enable quantification of interaction in highly correlated systems using scattering and diffraction experiments. △ Less

Submitted 27 March, 2021; originally announced March 2021.

Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Authors: Tianlun Yu, John Wright, Guru Khalsa, Betül Pamuk, Celesta S. Chang, Yury Matveyev, Thorsten Schmitt, Donglai Feng, David Muller, Grace Xing, Debdeep Jena, Vladimir N. Strocov

Abstract: The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituen… ▽ More The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN are aligned against the band gap in GaN, which excludes any significant electronic cross-talk of the superconducting states in NbN through the interface to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties elucidated by the combined materials advances and experimental methods in our work opens up new possibilities in systems where interfacial states play a defining role. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Exponential Growth Constants for Spanning Forests on Archimedean Lattices: Values and Comparisons of Upper Bounds

Authors: Shu-Chiuan Chang, Robert Shrock

Abstract: We compare our upper bounds on the exponential growth constant $φ(Λ)$ characterizing the asymptotic behavior of spanning forests on Archimedean lattices $Λ$ with recently derived upper bounds. Our upper bounds on $φ(Λ)$, which are very close to the respective values of $φ(Λ)$ that we have calculated, are shown to be significantly better for these lattices than the new upper bounds. We compare our upper bounds on the exponential growth constant $φ(Λ)$ characterizing the asymptotic behavior of spanning forests on Archimedean lattices $Λ$ with recently derived upper bounds. Our upper bounds on $φ(Λ)$, which are very close to the respective values of $φ(Λ)$ that we have calculated, are shown to be significantly better for these lattices than the new upper bounds. △ Less

Submitted 24 December, 2020; originally announced December 2020.

Comments: 5 pages, latex. arXiv admin note: text overlap with arXiv:2002.07150, arXiv:1810.07357

Report number: YITP-SB-2020-44 and NCKU

Journal ref: IJMPB (Internat. J. Mod. Phys. B) 35, 2150085 (2021)

Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order

Authors: Kayla X. Nguyen, Yi Jiang, Michael C. Cao, Prafull Purohit, Ajay K. Yadav, Pablo García-Fernández, Mark W. Tate, Celesta S. Chang, Pablo Aguado-Puente, Jorge Íñiguez, Fernando Gomez-Ortiz, Sol M. Gruner, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, D. A. Muller

Abstract: Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl… ▽ More Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties. △ Less

Submitted 9 December, 2020; v1 submitted 7 December, 2020; originally announced December 2020.

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films

Authors: Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

Abstract: $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

Novel $J_{\rm{eff}}$=3/2 Metallic Phase and Unconventional Superconductivity in GaTa$_4$Se$_8$

Authors: Min Yong Jeong, Seo Hyoung Chang, Hyeong Jun Lee, Jae-Hoon Sim, Kyeong Jun Lee, Etienne Janod, Laurent Cario, Ayman Said, Wenli Bi, Philipp Werner, Ara Go, Jungho Kim, Myung Joon Han

Abstract: By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic… ▽ More By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic excitation peak in the RIXS spectrum maintains its destructive quantum interference of $J_{\rm{eff}}$ at the Ta $L_2$-edge up to 10.4 GPa. Our exact diagonalization based DFT+DMFT calculations including spin-orbit coupling also reveal that the $J_{\rm{eff}}=3/2$ character can be clearly identified under high pressure. These results establish the intriguing nature of the correlated metallic magnetic phase, which represents the first confirmed example of $J_{\rm{eff}}$=3/2 moments residing in a metal. They also indicate that the pressure-induced superconductivity is likely unconventional and influenced by these $J_{\rm{eff}}=3/2$ moments. Based on a self-energy analysis, we furthermore propose the possibility of do**-induced superconductivity related to a spin-freezing crossover. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 7 pages, 5 figures (additional 4 pages and 6 figures for supplemental materials)

Journal ref: Phys. Rev. B 103, 081112 (2021)

Solid-State Lifshitz-van der Waals Repulsion through Two-Dimensional Materials

Authors: Tian Tian, Gianluca Vagli, Franzisca Naef, Kemal Celebi, Yen-Ting Li, Shu-Wei Chang, Frank Krumeich, Elton J. G. Santos, Yu-Cheng Chiu, Chih-Jen Shih

Abstract: In the 1960s, Lifshitz et al. predicted that quantum fluctuations can change the van der Waals (vdW) interactions from attraction to repulsion. However, the vdW repulsion, or its long-range counterpart - the Casimir repulsion, has only been demonstrated in liquid. Here we show that the atomic thickness and birefringent nature of two-dimensional materials make them a versatile medium to tailor the… ▽ More In the 1960s, Lifshitz et al. predicted that quantum fluctuations can change the van der Waals (vdW) interactions from attraction to repulsion. However, the vdW repulsion, or its long-range counterpart - the Casimir repulsion, has only been demonstrated in liquid. Here we show that the atomic thickness and birefringent nature of two-dimensional materials make them a versatile medium to tailor the Lifshitz-vdW interactions. Based on our theoretical prediction, we present direct force measurement of vdW repulsion on 2D material surfaces without liquid immersion and demonstrate their substantial influence on epitaxial properties. For example, heteroepitaxy of gold on a sheet of freestanding graphene leads to the growth of ultrathin platelets, owing to the vdW repulsion-induced ultrafast diffusion of gold clusters. The creation of repulsive force in nanoscale proximity offers technological opportunities such as single-molecule actuation and atomic assembly. △ Less

Submitted 11 July, 2022; v1 submitted 24 August, 2020; originally announced August 2020.

Interaction-Enhanced Group Velocity of Bosons in the Flat Band of an Optical Kagome Lattice

Authors: Tsz-Him Leung, Malte N. Schwarz, Shao-Wen Chang, Charles D. Brown, Govind Unnikrishnan, Dan Stamper-Kurn

Abstract: Geometric frustration of particle motion in a kagome lattice causes the single-particle band structure to have a flat s-orbital band. We probe this band structure by exciting a Bose-Einstein condensate into excited Bloch states of an optical kagome lattice, and then measuring the group velocity through the atomic momentum distribution. We find that interactions renormalize the band structure of th… ▽ More Geometric frustration of particle motion in a kagome lattice causes the single-particle band structure to have a flat s-orbital band. We probe this band structure by exciting a Bose-Einstein condensate into excited Bloch states of an optical kagome lattice, and then measuring the group velocity through the atomic momentum distribution. We find that interactions renormalize the band structure of the kagome lattice, greatly increasing the dispersion of the third band that, according to non-interacting band theory, should be nearly non-dispersing. Measurements at various lattice depths and gas densities agree quantitatively with predictions of the lattice Gross-Pitaevskii equation, indicating that the observed distortion of band structure is caused by the disortion of the overall lattice potential away from the kagome geometry by interactions. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 125, 133001 (2020)

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena **no, Celesta S. Chang, Takeyoshi Onuma, Yong** Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

Enhanced graphitic domains of unreduced graphene oxide and the interplay of hydration behaviour and catalytic activity

Authors: Tobias Foller, Rahman Daiyan, Xiaoheng **, Joshua Leverett, Hangyel Kim, Richard Webster, Jeaniffer E. Yap, Xinyue Wen, Aditya Rawal, K. Kanishka H. DeSilva, Masamichi Yoshimura, Heriberto Bustamante, Shery L. Y. Chang, Priyank Kumar, Yi You, Gwan Hyoung Lee, Rose Amal, Rakesh Joshi

Abstract: Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place below the decomposition temperature of the functional groups and thus allows fine-tuning of graphitic domains without compromising with the functionality of GO… ▽ More Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place below the decomposition temperature of the functional groups and thus allows fine-tuning of graphitic domains without compromising with the functionality of GO. By studying the transformation of GO under mild thermal treatment, we directly observe this size enhancement of graphitic domains from originally 40 nm2 to 200 nm2 through an extensive transmission electron microscopy (TEM) study. Additionally, we confirm the integrity of the functional groups during this process by comprehensive chemical analysis. A closer look into the process confirms the theoretically predicted relevance for the room temperature stability of GO. We further investigate the influence of enlarged graphitic domains on the hydration behaviour of GO and catalytic performance of single-atom catalysts supported by GO. △ Less

Submitted 21 May, 2021; v1 submitted 1 July, 2020; originally announced July 2020.

Structural origin of plasticity in strained high-entropy alloy

Authors: Chi-Huan Tung, Guan-Rong Huang, Zhitong Bai, Yue Fan, Wei-Ren Chen, Shou-Yi Chang

Abstract: High-entropy alloys (HEAs) are solid solutions of multiple elements with equal atomic ratios which present an innovative pathway for de novo alloy engineering. While there exist extensive studies to ascertain the important structural aspects governing their mechanical behaviors, elucidating the underlying deformation mechanisms still remains a challenge. Using atomistic simulations, we probe the p… ▽ More High-entropy alloys (HEAs) are solid solutions of multiple elements with equal atomic ratios which present an innovative pathway for de novo alloy engineering. While there exist extensive studies to ascertain the important structural aspects governing their mechanical behaviors, elucidating the underlying deformation mechanisms still remains a challenge. Using atomistic simulations, we probe the particle rearrangements in a yielding, model HEA system to understand the structural origin of its plasticity. We find the plastic deformation is initiated by irreversible topological fluctuations which tend to spatially localize in regions termed as soft spots which consist of particles actively participating in slow vibrational motions, an observation strikingly reminiscent of nonlinear glassy rheology. Due to the varying local elastic moduli resulting from the loss of compositional periodicity, these plastic responses exhibit significant spatial heterogeneity and are found to be inversely correlated with the distribution of local electronegativity. Further mechanical loading promotes the cooperativity among these local plastic events and triggers the formation of dislocation loops. As in strained crystalline solids, different dislocation loops can further merge together and propagate as the main carrier of large-scale plastic deformation. However, the energy barriers located at the spatial regions with higher local electronegativity severely hinders the motion of dislocations. By delineating the transient mechanical response in terms of atomic configuration, our computational findings shed new light on understanding the nature of plasticity of single-phase HEA. △ Less

Submitted 14 May, 2020; originally announced May 2020.

A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction

Authors: Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta, Sou-Chi Chang, Chia-Sheng Hsu, Ian A. Young, Azad Naeemi

Abstract: The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe… ▽ More The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated by the rotation of the Neel vector in BiFeO3 rather than the unidirectional exchange bias at the interface. We also quantify the magnitude of the interface exchange coupling coefficient J_int to be 0.32 pJ/m by comparing our simulation results with the giant magnetoresistance (GMR) curves and the magnetic hysteresis loop in the experiments. To the best of our knowledge, this is the first time that J_int is extracted quantitatively from experiments. Furthermore, we demonstrate that the switching success rate and the thermal stability of the BiFeO3/CoFe heterojunction can be improved by reducing the thickness of CoFe and increasing the length to width aspect ratio of the BiFeO3/CoFe heterojunction. Our theoretical model provides a comprehensive framework to study the magnetoelectric properties and the manipulation of the magnetic order of CoFe in the BiFeO3/CoFe heterojunction. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Engineering the Level Structure of a Giant Artificial Atom in Waveguide Quantum Electrodynamics

Authors: A. M. Vadiraj, Andreas Ask, T. G. McConkey, I. Nsanzineza, C. W. Sandbo Chang, Anton Frisk Kockum, C. M. Wilson

Abstract: Engineering light-matter interactions at the quantum level has been central to the pursuit of quantum optics for decades. Traditionally, this has been done by coupling emitters, typically natural atoms and ions, to quantized electromagnetic fields in optical and microwave cavities. In these systems, the emitter is approximated as an idealized dipole, as its physical size is orders of magnitude sma… ▽ More Engineering light-matter interactions at the quantum level has been central to the pursuit of quantum optics for decades. Traditionally, this has been done by coupling emitters, typically natural atoms and ions, to quantized electromagnetic fields in optical and microwave cavities. In these systems, the emitter is approximated as an idealized dipole, as its physical size is orders of magnitude smaller than the wavelength of light. Recently, artificial atoms made from superconducting circuits have enabled new frontiers in light-matter coupling, including the study of "giant" atoms which cannot be approximated as simple dipoles. Here, we explore a new implementation of a giant artificial atom, formed from a transmon qubit coupled to propagating microwaves at multiple points along an open transmission line. The nature of this coupling allows the qubit radiation field to interfere with itself leading to some striking giant-atom effects. For instance, we observe strong frequency-dependent couplings of the qubit energy levels to the electromagnetic modes of the transmission line. Combined with the ability to in situ tune the qubit energy levels, we show that we can modify the relative coupling rates of multiple qubit transitions by more than an order of magnitude. By doing so, we engineer a metastable excited state, allowing us to operate the giant transmon as an effective lambda system where we clearly demonstrate electromagnetically induced transparency. △ Less

Submitted 31 March, 2020; originally announced March 2020.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. A 103, 023710 (2021)

In situ modification of delafossite type PdCoO2 bulk single crystal for reversible hydrogen sorption and fast hydrogen evolution

Authors: Guowei Li, Seunghyun Khim, Celesta S. Chang, Chenguang Fu, Nabhanila Nandi, Fan Li, Qun Yang, Graeme R. Blake, Stuart Parkin, Gudrun Auffermann, Yan Sun, David A. Muller, Andrew P. Mackenzie, Claudia Felser

Abstract: The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising… ▽ More The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising electrocatalyst for hydrogen evolution reactions (HERs). An overpotential of only 31 mV results in a current density of 10 mA cm^(-2), accompanied by high long-term stability. We have precisely determined that the crystal surface structure is modified after electrochemical activation with the formation of strained Pd nanoclusters in the surface layer. These nanoclusters exhibit reversible hydrogen sorption and desorption, creating more active sites for hydrogen access. The bulk PdCoO2 single crystal with ultra-high conductivity, which acts as a natural substrate for the Pd nanoclusters, provides a high-speed channel for electron transfer △ Less

Submitted 25 March, 2020; originally announced March 2020.

Asymptotic Behavior of Spanning Forests and Connected Spanning Subgraphs on Two-Dimensional Lattices

Authors: Shu-Chiuan Chang, Robert Shrock

Abstract: We calculate exponential growth constants $φ$ and $σ$ describing the asymptotic behavior of spanning forests and connected spanning subgraphs on strip graphs, with arbitrarily great length, of several two-dimensional lattices, including square, triangular, honeycomb, and certain heteropolygonal Archimedean lattices. By studying the limiting values as the strip widths get large, we infer lower and… ▽ More We calculate exponential growth constants $φ$ and $σ$ describing the asymptotic behavior of spanning forests and connected spanning subgraphs on strip graphs, with arbitrarily great length, of several two-dimensional lattices, including square, triangular, honeycomb, and certain heteropolygonal Archimedean lattices. By studying the limiting values as the strip widths get large, we infer lower and upper bounds on these exponential growth constants for the respective infinite lattices. Since our lower and upper bounds are quite close to each other, we can infer very accurate approximate values for these exponential growth constants, with fractional uncertainties ranging from $O(10^{-4})$ to $O(10^{-2})$. We show that $φ$ and $σ$, are monotonically increasing functions of vertex degree for these lattices. △ Less

Submitted 15 February, 2020; originally announced February 2020.

Comments: 33 pages, 30 tables. arXiv admin note: text overlap with arXiv:1810.07357

Report number: Stony Brook preprint YITP-SB-2019-42

Journal ref: Int. J. Mod. Phys. B 34, 2050249 (2020)

Exfoliation of Two-Dimensional Nanosheets of Metal Diborides

Authors: Ahmed Yousaf, Matthew S. Gilliam, Shery L. Y. Chang, Mathias Augustin, Yuqi Guo, Fraaz Tahir, Meng Wang, Alexandra Schwindt, Ximo S. Chu, Duo O. Li, Suneet Kale, Abhishek Debnath, Yongming Liu, Matthew D. Green, Elton J. G. Santos, Alexander A. Green, Qing Hua Wang

Abstract: The metal diborides are a class of ceramic materials with crystal structures consisting of hexagonal sheets of boron atoms alternating with planes of metal atoms held together with mixed character ionic/covalent bonds. Many of the metal diborides are ultrahigh temperature ceramics like HfB$_2$, TaB$_2$, and ZrB$_2$, which have melting points above 3000$^\circ$C, high mechanical hardness and streng… ▽ More The metal diborides are a class of ceramic materials with crystal structures consisting of hexagonal sheets of boron atoms alternating with planes of metal atoms held together with mixed character ionic/covalent bonds. Many of the metal diborides are ultrahigh temperature ceramics like HfB$_2$, TaB$_2$, and ZrB$_2$, which have melting points above 3000$^\circ$C, high mechanical hardness and strength at high temperatures, and high chemical resistance, while MgB$_2$ is a superconductor with a transition temperature of 39 K. Here we demonstrate that this diverse family of non-van der Waals materials can be processed into stable dispersions of two-dimensional (2D) nanosheets using ultrasonication-assisted exfoliation. We generate 2D nanosheets of the metal diborides AlB$_2$, CrB$_2$, HfB$_2$, MgB$_2$, NbB$_2$, TaB$_2$, TiB$_2$, and ZrB$_2$, and use electron and scanning probe microscopies to characterize their structures, morphologies, and compositions. The exfoliated layers span up to micrometers in lateral dimension and reach thicknesses down to 2-3 nm, while retaining their hexagonal atomic structure and chemical composition. We exploit the convenient solution-phase dispersions of exfoliated CrB$_2$ nanosheets to incorporate them directly into polymer composites. In contrast to the hard and brittle bulk CrB$_2$, we find that CrB$_2$ nanocomposites remain very flexible and simultaneously provide increases in the elastic modulus and the ultimate tensile strength of the polymer. The successful liquid-phase production of 2D metal diborides enables their processing using scalable low-temperature solution-phase methods, extending their use to previously unexplored applications, and reveals a new family of non-van der Waals materials that can be efficiently exfoliated into 2D forms. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches

Authors: Seungho Kim, Gyuho Myeong, Wongil Shin, Hongsik Lim, Boram Kim, Taehyeok **, Sung** Chang, Kenji Watanabe, Takashi Taniguchi, Sungjae Cho

Abstract: The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (… ▽ More The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec). Alternative tunnel field-effect transistors (TFETs) are widely studied to achieve a sub-thermionic SS and high I60 (the current where SS becomes 60 mV/dec). Heterojunction (HJ) TFETs show promise for delivering a high I60, but experimental results do not meet theoretical expectations due to interface problems in the HJs constructed from different materials. Here, we report a natural HJ-TFET with spatially varying layer thickness in black phosphorus without interface problems. We achieved record-low average SS values over 4-5 dec of current (SSave_4dec = ~22.9 mV/dec and SSave_5dec = ~26.0 mV/dec) with record-high I60 (I60 = 0.65-1 uA/um), paving the way for application in low-power switches. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 18 pages, 3 figures, accepted by Nature Nanotechnology

Disentangling magnetic and grain contrast in polycrystalline FeGe thin films using four-dimensional Lorentz scanning transmission electron microscopy

Authors: Kayla X. Nguyen, Xiyue S. Zhang, Emrah Turgut, Michael C. Cao, Jack Glaser, Zhen Chen, Matthew J. Stolt, Celesta S. Chang, Yu-Tsun Shao, Song **, Gregory D. Fuchs, David A. Muller

Abstract: The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable materi… ▽ More The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable material platform. Although conventional Lorentz electron microscopy provides the requisite spatial resolution to probe chiral magnetic textures in single-crystal FeGe, probing the magnetism of sputtered B20 FeGe is more challenging because the sub-micron crystal grains add confounding contrast. We address the challenge of disentangling magnetic and grain contrast by applying 4-dimensional Lorentz scanning transmission electron microscopy using an electron microscope pixel array detector. Supported by analytical and numerical models, we find that the most important parameter for imaging magnetic materials with polycrystalline grains is the ability for the detector to sustain large electron doses, where having a high-dynamic range detector becomes extremely important. Despite the small grain size in sputtered B20 FeGe on Si, using this approach we are still able to observe helicity switching of skyrmions and magnetic helices across two adjacent grains as they thread through neighboring grains. We reproduce this effect using micromagnetic simulations by assuming that the grains have distinct orientation and magnetic chirality and find that magnetic helicity couples to crystal chirality. Our methodology for imaging magnetic textures is applicable to other thin-film magnets used for spintronics and memory applications, where an understanding of how magnetic order is accommodated in polycrystalline materials is important. △ Less

Submitted 7 March, 2022; v1 submitted 19 January, 2020; originally announced January 2020.

Comments: 22 pages, 8 figures, 2 appendix figures

Controlled introduction of defects to delafossite metals by electron irradiation

Authors: V. Sunko, P. H. McGuinness, C. S. Chang, E. Zhakina, S. Khim, C. E. Dreyer, M. Konczykowski, M. König, D. A. Muller, A. P. Mackenzie

Abstract: The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence o… ▽ More The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence of highly unusual levels of crystalline perfection. We report the results of experiments in which high energy electron irradiation was used to introduce point disorder to the Pd and Pt layers in which the conduction occurs. We obtain the cross-section for formation of Frenkel pairs in absolute units, and cross-check our analysis with first principles calculations of the relevant atomic displacement energies. We observe an increase of resistivity that is linear in defect density with a slope consistent with scattering in the unitary limit. Our results enable us to deduce that the as-grown crystals contain extremely low levels of in-plane defects of approximately $0.001\%$. This confirms that crystalline perfection is the most important factor in realizing the long mean free paths, and highlights how unusual these delafossite metals are in comparison with the vast majority of other multi-component oxides and alloys. We discuss the implications of our findings for future materials research. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. X 10, 021018 (2020)

$q$-Plane Zeros of the Potts Partition Function on Diamond Hierarchical Graphs

Authors: Shu-Chiuan Chang, Roland K. W. Roeder, Robert Shrock

Abstract: We report exact results concerning the zeros of the partition function of the Potts model in the complex $q$ plane, as a function of a temperature-like Boltzmann variable $v$, for the $m$'th iterate graphs $D_m$ of the Diamond Hierarchical Lattice (DHL), including the limit $m \to \infty$. In this limit we denote the continuous accumulation locus of zeros in the $q$ planes at fixed $v = v_0$ as… ▽ More We report exact results concerning the zeros of the partition function of the Potts model in the complex $q$ plane, as a function of a temperature-like Boltzmann variable $v$, for the $m$'th iterate graphs $D_m$ of the Diamond Hierarchical Lattice (DHL), including the limit $m \to \infty$. In this limit we denote the continuous accumulation locus of zeros in the $q$ planes at fixed $v = v_0$ as ${\mathcal B}_q(v_0)$. We apply theorems from complex dynamics to establish properties of ${\mathcal B}_q(v_0)$. For $v=-1$ (the zero-temperature Potts antiferromagnet, or equivalently, chromatic polynomial), we prove that ${\mathcal B}_q(-1)$ crosses the real-$q$ axis at (i) a minimal point $q=0$, (ii) a maximal point $q=3$ (iii) $q=32/27$, (iv) a cubic root that we give, with the value $q = q_1 = 1.6388969..$, and (v) an infinite number of points smaller than $q_1$, converging to $32/27$ from above. Similar results hold for ${\mathcal B}_q(v_0)$ for any $-1 < v < 0$ (Potts antiferromagnet at nonzero temperature). The locus ${\mathcal B}_q(v_0)$ crosses the real-$q$ axis at only two points for any $v > 0$ (Potts ferromagnet). We also provide computer-generated plots of ${\mathcal B}_q(v_0)$ at various values of $v_0$ in both the antiferromagnetic and ferromagnetic regimes and compare them to numerically computed zeros of $Z(D_4,q,v_0)$. △ Less

Submitted 10 November, 2019; originally announced November 2019.

Comments: 41 pages, 16 figures. Comments welcome!

MSC Class: 82B20; 05C31 (Primary); 37F45 (Secondary)

Journal ref: J. Math. Phys. 61, 073301 (2020)

Spontaneous time-reversal symmetry breaking without magnetism in a $S=1$ chain

Authors: Shun-Chiao Chang, Pavan Hosur

Abstract: States of matter that break time-reversal symmetry are invariably associated with magnetism or circulating currents. Recently, one of us proposed a phase, the directional scalar spin chiral order (DSSCO), as an exception: it breaks time-reversal symmetry via chiral ordering of spins along a particular direction, but is spin-rotation symmetric. In this work, we prove the existence of this state via… ▽ More States of matter that break time-reversal symmetry are invariably associated with magnetism or circulating currents. Recently, one of us proposed a phase, the directional scalar spin chiral order (DSSCO), as an exception: it breaks time-reversal symmetry via chiral ordering of spins along a particular direction, but is spin-rotation symmetric. In this work, we prove the existence of this state via state-of-the-art density matrix renormalization group (DMRG) analysis on a spin-1 chain with nearest-neighbor bilinear-biquadratic interactions and additional third-neighbor ferromagnetic Heisenberg exchange. Despite the large entanglement introduced by the third-neighbor coupling, we are able to access system sizes up to $L=918$ sites. We find first order phase transitions from the DSSCO into the famous Haldane phase as well as a spin-quadrupolar phase where spin nematic correlations dominate. In the Haldane phase, we propose and demonstrate a method for detecting the topological edge states using DMRG that could be useful for other topological phases too. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 102, 174404 (2020)

Hump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect

Authors: Byungmin Sohn, Bongju Kim, Jun Woo Choi, Seo Hyoung Chang, Jung Hoon Han, Changyoung Kim

Abstract: A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic… ▽ More A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $ρ_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $ρ_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $ρ_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 6 pages, 4 figures

Observation of Three-Photon Spontaneous Parametric Downconversion in a Superconducting Parametric Cavity

Authors: C. W. Sandbo Chang, Carlos Sabín, P. Forn-Díaz, Fernando Quijandría, A. M. Vadiraj, I. Nsanzineza, G. Johansson, C. M. Wilson

Abstract: Spontaneous parametric downconversion (SPDC) has been a key enabling technology in exploring quantum phenomena and their applications for decades. For instance, traditional SPDC, which splits a high energy pump photon into two lower energy photons, is a common way to produce entangled photon pairs. Since the early realizations of SPDC, researchers have thought to generalize it to higher order, e.g… ▽ More Spontaneous parametric downconversion (SPDC) has been a key enabling technology in exploring quantum phenomena and their applications for decades. For instance, traditional SPDC, which splits a high energy pump photon into two lower energy photons, is a common way to produce entangled photon pairs. Since the early realizations of SPDC, researchers have thought to generalize it to higher order, e.g., to produce entangled photon triplets. However, directly generating photon triplets through a single SPDC process has remained elusive. Here, using a flux-pumped superconducting parametric cavity, we demonstrate direct three-photon SPDC, with photon triplets generated in a single cavity mode or split between multiple modes. With strong pum**, the states can be quite bright, with flux densities exceeding 60 photon/s/Hz. The observed states are strongly non-Gaussian, which has important implications for potential applications. In the single-mode case, we observe a triangular star-shaped distribution of quadrature voltages, indicative of the long-predicted "star state". The observed star state shows strong third-order correlations, as expected for a state generated by a cubic Hamiltonian. By pum** at the sum frequency of multiple modes, we observe strong three-body correlations between multiple modes, strikingly, in the absence of second-order correlations. We further analyze the third-order correlations under mode transformations by the symplectic symmetry group, showing that the observed transformation properties serve to "fingerprint" the specific cubic Hamiltonian that generates them. The observed non-Gaussian, third-order correlations represent an important step forward in quantum optics and may have a strong impact on quantum communication with microwave fields as well as continuous-variable quantum computation. △ Less

Submitted 19 July, 2019; originally announced July 2019.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. X 10, 011011 (2020)

Beyond the Isotropic Lifshitz Endpoint

Authors: Tom T. S. Chang

Abstract: The puzzle of the disappearance of isotropic Lifshitz points in condensed matter physics is explained from the point of view of the Wilsonian renormalization group. In analogy to the commensurate ideas of metamagnetic phase transitions, we describe the physics of thermodynamic states beyond an isotropic Lifshitz endpoint. Such phenomenon may be understood in terms of a statistically isotropic envi… ▽ More The puzzle of the disappearance of isotropic Lifshitz points in condensed matter physics is explained from the point of view of the Wilsonian renormalization group. In analogy to the commensurate ideas of metamagnetic phase transitions, we describe the physics of thermodynamic states beyond an isotropic Lifshitz endpoint. Such phenomenon may be understood in terms of a statistically isotropic environment of coexisting multi-incommensurate helicoidal states. In addition to the magnetic and condensed matter discussions, we consider also an interesting example in the context of dynamical evolution. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Comments: 10 pages, one figure

Mid-infrared (3-8 μm) $\text{Ge}_{1-y}\text{Sn}_y$ alloys (0.15 < $y$ < 0.30): synthesis, structural, and optical properties

Authors: Chi Xu, Patrick M. Wallace, Dhruve A. Ringwala, Shery L. Y. Chang, Christian D. Poweleit, John Kouvetakis, José Menéndez

Abstract: $\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth temperatures as high as 290 $^{\circ}… ▽ More $\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth temperatures as high as 290 $^{\circ}$C. The films show structural properties that are consistent with results from earlier materials with much lower Sn concentrations. These include the lattice parameter and the Ge-Ge Raman frequency, which are found to depend linearly on composition. The simplicity of the structures, directly grown on Si, makes it possible to carry out detailed optical studies. Sharp absorption edges are found, reaching 8 $μ$m near $y$ =0.3. The compositional dependence of edge energies shows a cubic deviation from the standard quadratic alloy expression. The cubic term may dramatically impact the ability of the alloys to cover the long-wavelength (8-12 $μ$m) mid-IR atmospheric window. △ Less

Submitted 11 May, 2019; v1 submitted 15 April, 2019; originally announced April 2019.

Journal ref: Appl. Phys. Lett. 114, 212104 (2019)

Protecting superconducting qubits from phonon mediated decay

Authors: Yaniv J. Rosen, Matthew Horsley, Sara E. Harrison, Eric T. Holland, Allan S. Chang, Tiziana Bond, Jonathan L DuBois

Abstract: For quantum computing to become fault tolerant, the underlying quantum bits must be effectively isolated from the noisy environment. It is well known that including an electromagnetic bandgap around the qubit operating frequency improves coherence for superconducting circuits. However, investigations of bandgaps to other environmental coupling mechanisms remain largely unexplored. Here we present… ▽ More For quantum computing to become fault tolerant, the underlying quantum bits must be effectively isolated from the noisy environment. It is well known that including an electromagnetic bandgap around the qubit operating frequency improves coherence for superconducting circuits. However, investigations of bandgaps to other environmental coupling mechanisms remain largely unexplored. Here we present a method to enhance the coherence of superconducting circuits by introducing a phononic bandgap around the device operating frequency. The phononic bandgaps block resonant decay of defect states within the gapped frequency range, removing the electromagnetic coupling to phonons at the gap frequencies. We construct a multi-scale model that derives the decrease in the density of states due to the bandgap and the resulting increase in defect state $T_1$ times. We demonstrate that emission rates from in-plane defect states can be suppressed by up to two orders of magnitude. We combine these simulations with theory for resonators operated in the continuous-wave regime and show that improvements in quality factors are expected by up to the enhancement in defect $T_1$ times. Furthermore, we use full master equation simulation to demonstrate the suppression of qubit energy relaxation even when interacting with 200 defects states. We conclude with an exploration of device implementation including tradeoffs between fabrication complexity and qubit performance. △ Less

Submitted 1 May, 2019; v1 submitted 14 March, 2019; originally announced March 2019.

Comments: The following article has been submitted to Applied Physics Letters

Journal ref: Applied Physics Letters 114, 202601 (2019)

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

Authors: Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta, Sou-Chi Chang, Sasikanth Manipatruni, Ian A. Young, Azad Naeemi

Abstract: The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a… ▽ More The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps. △ Less

Submitted 8 February, 2019; originally announced February 2019.