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Geodesic nature and quantization of shift vector
Authors:
Hua Wang,
Kai Chang
Abstract:
We present the geodesic nature and quantization of geometric shift vector in quantum systems, with the parameter space defined by the Bloch momentum, using the Wilson loop approach. Our analysis extends to include bosonic phonon drag shift vectors with non-vertical transitions. We demonstrate that the gauge invariant shift vector can be quantized as integer values, analogous to the Euler character…
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We present the geodesic nature and quantization of geometric shift vector in quantum systems, with the parameter space defined by the Bloch momentum, using the Wilson loop approach. Our analysis extends to include bosonic phonon drag shift vectors with non-vertical transitions. We demonstrate that the gauge invariant shift vector can be quantized as integer values, analogous to the Euler characteristic based on the Gauss-Bonnet theorem for a manifold with a smooth boundary. We reveal intricate relationships among geometric quantities such as the shift vector, Berry curvature, and quantum metric. Our findings demonstrate that the loop integral of the shift vector in the quantized interband formula contributes to the non-quantized component of the trace of conductivity in the circular photogalvanic effect. The Wilson loop method facilitates first-principles calculations, providing insights in the geometric underpinnings of these interband gauge invariant quantities and shedding light on their nonlinear optical manifestations in real materials.
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Submitted 17 June, 2024; v1 submitted 22 May, 2024;
originally announced May 2024.
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Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces
Authors:
Xu Zhang,
Tongshuai Zhu,
Shuai Zhang,
Zhongqiang Chen,
Anke Song,
Chong Zhang,
Rongzheng Gao,
Wei Niu,
Yequan Chen,
Fucong Fei,
Yilin Tai,
Guoan Li,
Binghui Ge,
Wenkai Lou,
Jie Shen,
Haijun Zhang,
Kai Chang,
Fengqi Song,
Rong Zhang,
Xuefeng Wang
Abstract:
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e…
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Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Submitted 7 March, 2024;
originally announced March 2024.
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Data-driven compression of electron-phonon interactions
Authors:
Yao Luo,
Dhruv Desai,
Benjamin K. Chang,
**soo Park,
Marco Bernardi
Abstract:
First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques lev…
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First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e-ph interactions based on singular value decomposition (SVD), a widely used matrix / image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e-ph interactions - including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature - while using only a small fraction (1-2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e-ph interactions. Furthermore, they accelerate state-of-the-art first-principles e-ph calculations by about two orders of magnitudes without sacrificing accuracy. Our Pareto-optimal parametrization of e-ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter.
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Submitted 31 March, 2024; v1 submitted 20 January, 2024;
originally announced January 2024.
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First-Principles Electron-Phonon Interactions and Polarons in the Parent Cuprate La$_2$CuO$_4$
Authors:
Benjamin K. Chang,
Iurii Timrov,
**soo Park,
**-Jian Zhou,
Nicola Marzari,
Marco Bernardi
Abstract:
Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped…
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Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped) cuprate, La$_2$CuO$_4$ (LCO), by means of first-principles calculations. Leveraging parameter-free Hubbard-corrected density functional theory, we obtain a ground state with band gap and Cu magnetic moment in nearly exact agreement with experiments. This enables a quantitative characterization of $e$-ph interactions. Our calculations reveal two classes of longitudinal optical (LO) phonons with strong $e$-ph coupling to hole states. These modes consist of Cu-O plane bond-stretching and bond-bending as well as vibrations of apical O atoms. The hole spectral functions, obtained with a cumulant method that can capture strong $e$-ph coupling, exhibit broad quasiparticle peaks with a small spectral weight ($Z\approx0.25$) and pronounced LO-phonon sidebands characteristic of polaron effects. Our calculations predict features observed in photoemission spectra, including a 40-meV peak in the $e$-ph coupling distribution function not explained by existing models. These results show that the universal strong $e$-ph coupling found experimentally in lanthanum cuprates is an intrinsic feature of the parent compound, and elucidates its microscopic origin.
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Submitted 20 January, 2024;
originally announced January 2024.
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One-dimensional Multiferroic Semiconductor WOI3: Unconventional Anisotropic d^1 Rule and Bulk Photovoltaic Effect
Authors:
Zhihao Gong,
Yechen Xun,
Zhuang Qian,
Kai Chang,
**gshan Qi,
Hua Wang
Abstract:
The pursuit of multiferroic magnetoelectrics, combining simultaneous ferroelectric and magnetic orders, remains a central focus in condensed matter physics. Here we report the centrosymmetric, one-dimensional (1D) antiferromagnetic WOI$_3$ undergoes a strain-induced ferroelectric distortion. The paraelectric-ferroelectric transition is originated from the unconventional anisotropic $d^1$ mechanism…
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The pursuit of multiferroic magnetoelectrics, combining simultaneous ferroelectric and magnetic orders, remains a central focus in condensed matter physics. Here we report the centrosymmetric, one-dimensional (1D) antiferromagnetic WOI$_3$ undergoes a strain-induced ferroelectric distortion. The paraelectric-ferroelectric transition is originated from the unconventional anisotropic $d^1$ mechanism, where an unpaired d electron of each W$^{5+}$ ion contributes to magnetic orders. Employing a Heisenberg model with Dzyaloshinskii-Moriya interaction, we predict an antiferromagnetic spin configuration as the paraelectric ground state, transitioning to a ferroelectric phase with noncollinear spin arrangement under uniaxial strain. The ferroelectric polarization and noncollinear spin arrangement can be manipulated by varying the applied strain. While the energy barriers for switching ferroelectric polarizations with magnetic orders are on the order of a few dozen of meV, the shift current bulk photovoltaic effect (BPVE) exhibits remarkable differences, providing a precise and valuable tool for experimentally probing the interplay of ferroelectric and magnetic orders in 1D WOI$_3$.
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Submitted 13 March, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
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Strain effects in twisted spiral antimonene
Authors:
Ding-Ming Huang,
Xu Wu,
Kai Chang,
Hao Hu,
Ye-Liang Wang,
H. Q. Xu,
Jian-Jun Zhang
Abstract:
van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain eff…
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van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few-atomic-layers of antimonene (\b{eta}-phase). The as-grown spiral is intrinsically strained and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter-layer twist and in-plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of milli-electron-volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices.
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Submitted 26 October, 2023;
originally announced October 2023.
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Topological phase transition in a narrow bandgap semiconductor nanolayer
Authors:
Zhi-Hai Liu,
Wenkai Lou,
Kai Chang,
H. Q. Xu
Abstract:
Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development toward…
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Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer.
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Submitted 26 October, 2023;
originally announced October 2023.
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Electronic Structure Modulation from Configuring Anatase TiO2 into a Bicontinuous Mesostructure
Authors:
Ying-Hao Lu,
Bor Kae Chang,
Yi-Fan Chen
Abstract:
Configuring TiO2 into bicontinuous mesostructures greatly improves its photocatalytic efficiency. This is often ascribed to the expanded surface area. Yet, whether mesostructuring modulates TiO2's electronic structure and how that contributes to the improvement are rarely discussed. Here, we employed spectroscopic and density functional theory approaches to address the question. It is found that t…
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Configuring TiO2 into bicontinuous mesostructures greatly improves its photocatalytic efficiency. This is often ascribed to the expanded surface area. Yet, whether mesostructuring modulates TiO2's electronic structure and how that contributes to the improvement are rarely discussed. Here, we employed spectroscopic and density functional theory approaches to address the question. It is found that the improved efficacy could arise from an expansion in surface area and elevation in density of states, both of which might collectively lead to the observed reduction in charge-carrier recombination.
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Submitted 20 October, 2023;
originally announced October 2023.
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Ferroelastic twin wall mediated ferro-flexoelectricity and bulk photovoltaic effect in SrTiO$_3$
Authors:
Ri He,
Haowei Xu,
Peijun Yang,
Kai Chang,
Hua Wang,
Zhicheng Zhong
Abstract:
Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bi-stable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO$_3$ twin walls can be switched by ultra-low strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the…
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Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bi-stable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO$_3$ twin walls can be switched by ultra-low strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the twin walls can be deterministically rotated and realigned in specific directions under strain gradient, which breaks the inversion symmetry of a sequence of walls and leads to a macroscopic polarization. The system can maintain polarity even after the strain gradient is removed. As a result, the polarization of twin walls can exhibit ferroelectric-like hysteresis loop upon cyclic bending, namely ferro-flexoelectricity. Finally, we propose a scheme to experimentally detect the polarity of twin wall by measuring the bulk photovoltaic responses. Our findings suggest a twin-wall-mediated ferro-flexoelectricity in SrTiO$_3$, which could be potentially exploited as functional elements in nano-electronic devices design.
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Submitted 16 October, 2023;
originally announced October 2023.
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Geometric density of states of electronic structures for local responses: Phase information from the amplitudes of STM measurement
Authors:
Shu-Hui Zhang,
** Yang,
Ding-Fu Shao,
Jia-Ji Zhu,
Wen Yang,
Kai Chang
Abstract:
Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel applications. Inspired by geometry phases, we introduce a geometric amplitude named as the geometric density of states (GDOS) dictated by the differential curvature of the constant-energy contour. The GDOS determines the amp…
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Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel applications. Inspired by geometry phases, we introduce a geometric amplitude named as the geometric density of states (GDOS) dictated by the differential curvature of the constant-energy contour. The GDOS determines the amplitude of the real-space Green's function making it attain the ultimate expression with transparent physics. The local responses of crystalline materials are usually formulated by the real-space Green's function, so the relevant physics should be refreshed by GDOS. As an example of local responses, we suggest using scanning tunneling microscopy (STM) to characterize the surface states of three-dimensional topological insulator under an in-plane magnetic field. The GDOS favors the straightforward simulation of STM measurement without resorting to Fourier transform of the real-space measurement, and also excavates the unexplored potential of STM measurement to extract the phase information of wavefunction through its amplitude, i.e., the spin and curvature textures. Therefore, the proposed GDOS deepens the understanding of electronic band structures and is indispensable in local responses, and it should be universal for any periodic systems.
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Submitted 25 September, 2023;
originally announced September 2023.
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Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition
Authors:
Ya-Xun Wang,
Jian-Gao Li,
Gotthard Seifert,
Kai Chang,
Dong-Bo Zhang
Abstract:
We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high strain gradient-induced insulator-to-metal transition. We show that an unusual type-II band alignment is formed between the compress…
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We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high strain gradient-induced insulator-to-metal transition. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film, resulting in a spatial separation of electron and hole. Therefore, upon the insulator-to-metal transition, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to pronounced polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high, with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.
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Submitted 7 September, 2023;
originally announced September 2023.
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Gate voltage induced injection and shift currents in AA- and AB-stacked bilayer graphene
Authors:
Ze Zheng,
Kainan Chang,
** Luo Cheng
Abstract:
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for develo** passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe t…
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Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for develo** passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe the electronic states, the injection coefficients for circular photogalvanic effects and shift conductivities for linear photogalvanic effects are calculated for both materials with light wavelengths ranging from THz to visible. We find that gate voltage induced photogalvanic effects can be very significant for AB-stacked bilayer graphene, with generating a maximal dc current in the order of mA for a 1 $μ$m wide sample illuminated by a light intensity of 0.1 GW/cm$^2$, which is determined by the optical transition around the band gap and van Hove singularity points. Although such effects in AA-stacked bilayer graphene are about two orders of magnitude smaller than those in AB-stacked bilayer graphene, the spectrum is interestingly limited in a very narrow photon energy window, which is associated with the interlayer coupling strength. A detailed analysis of the light polarization dependence is also performed. The gate voltage and chemical potential can be used to effectively control the photogalvanic effects.
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Submitted 11 July, 2023;
originally announced July 2023.
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Self-supervised Representations and Node Embedding Graph Neural Networks for Accurate and Multi-scale Analysis of Materials
Authors:
Jian-Gang Kong,
Ke-Lin Zhao,
Jian Li,
Qing-Xu Li,
Yu Liu,
Rui Zhang,
Jia-Ji Zhu,
Kai Chang
Abstract:
Supervised machine learning algorithms, such as graph neural networks (GNN), have successfully predicted material properties. However, the superior performance of GNN usually relies on end-to-end learning on large material datasets, which may lose the physical insight of multi-scale information about materials. And the process of labeling data consumes many resources and inevitably introduces erro…
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Supervised machine learning algorithms, such as graph neural networks (GNN), have successfully predicted material properties. However, the superior performance of GNN usually relies on end-to-end learning on large material datasets, which may lose the physical insight of multi-scale information about materials. And the process of labeling data consumes many resources and inevitably introduces errors, which constrains the accuracy of prediction. We propose to train the GNN model by self-supervised learning on the node and edge information of the crystal graph. Compared with the popular manually constructed material descriptors, the self-supervised atomic representation can reach better prediction performance on material properties. Furthermore, it may provide physical insights by tuning the range information. Applying the self-supervised atomic representation on the magnetic moment datasets, we show how they can extract rules and information from the magnetic materials. To incorporate rich physical information into the GNN model, we develop the node embedding graph neural networks (NEGNN) framework and show significant improvements in the prediction performance. The self-supervised material representation and the NEGNN framework may investigate in-depth information from materials and can be applied to small datasets with increased prediction accuracy.
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Submitted 5 June, 2024; v1 submitted 19 October, 2022;
originally announced November 2022.
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Theory of Optical Activity in Doped Systems with Application to Twisted Bilayer Graphene
Authors:
K. Chang,
Z. Zheng,
J. E. Sipe,
J. L. Cheng
Abstract:
We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are descri…
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We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are described by a finite band effective Hamiltonian, such as a few-band tight-binding model. The expression we obtain for the optical activity tensor is in good numerical agreement with a recent theory derived for an undoped topologically trivial gapped system. We apply our theory to the optical activity of a gated twisted bilayer graphene, with a detailed discussion of the dependence of the results on twist angle, chemical potential, gate voltage, and location of rotation center forming the twisted bilayer graphene.
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Submitted 8 October, 2022;
originally announced October 2022.
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Temperature-Induced Magnonic Chern Insulator in Collinear Antiferromagnets
Authors:
Yun-Mei Li,
Xi-Wang Luo,
Kai Chang
Abstract:
Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a Chern insulating phase in two-dimensional collinear antiferromagnets with sublattice asymmetries by increasing temperature. We present the phase diagram of the…
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Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a Chern insulating phase in two-dimensional collinear antiferromagnets with sublattice asymmetries by increasing temperature. We present the phase diagram of the system and show that the trivial magnon bands at zero temperature exhibit Chern insulating phase above a critical temperature before the paramagnetic phase transition. The self-energy corrections close and reopen the bandgap at Γ or K points, accompanied by a magnon chirality switch and nontrivial Berry curvature transition. The thermal Hall effect of magnons or detecting the magnon polarization can give experimentally prominent signatures of topological transitions. We include the numerical results based on van der Waals magnet MnPS3, calling for experimental implementation. Our work presents a new paradigm for constructing topological phase that is beyond the linear spin wave theory.
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Submitted 4 February, 2023; v1 submitted 21 September, 2022;
originally announced September 2022.
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Selectively controlled ferromagnets by electric fields in van der Waals ferromagnetic heterojunctions
Authors:
Zi-Ao Wang,
Weishan Xue,
Faguang Yan,
Wenkai Zhu,
Yi Liu,
Xinhui Zhang,
Zhongming Wei,
Kai Chang,
Zhe Yuan,
Kaiyou Wang
Abstract:
Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be…
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Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the magnetic properties of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 remarkably modifies magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of ferromagnets demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.
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Submitted 27 July, 2022;
originally announced July 2022.
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Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction
Authors:
Chong Liu,
Kai Chang,
Ke Zou
Abstract:
Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic…
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Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.
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Submitted 24 August, 2022; v1 submitted 13 July, 2022;
originally announced July 2022.
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Comparison of the canonical transformation and energy functional formalisms for ab initio calculations of self-localized polarons
Authors:
Yao Luo,
Benjamin K. Chang,
Marco Bernardi
Abstract:
In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been…
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In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been proposed in the recent literature [2,3]. In this work, we analyze and compare these two methods in detail. We show that the small polaron energy is identical in the two formalisms when using the same polaron wave function. We also show that our canonical transformation formalism can predict polaron band structures and can properly treat zero- and finite-temperature lattice vibration effects, although at present using a fixed polaron wave function. Conversely, the energy functional approach can compute the polaron wave function, but as we show here it neglects lattice vibrations and cannot address polaron self-localization and thermal band narrowing. Taken together, this work relates two different methods developed recently to study polarons from first-principles, highlighting their merits and shortcomings and discussing them both in a unified formalism.
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Submitted 1 March, 2022;
originally announced March 2022.
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Higher-order Topological Phases of Magnons in van der Waals Honeycomb Ferromagnets
Authors:
Yun-Mei Li,
Ya-Jie Wu,
Xi-Wang Luo,
Yongwei Huang,
Kai Chang
Abstract:
We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational s…
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We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational symmetry which protects a second-order topological phase with corner modes in bilayer and hinge modes along stacking direction. Moreover, an introduced staggered interlayer coupling establishes a Z$_{2}$$\times$Z topology, giving rise to gapped topological surface modes carrying non-zero Chern numbers. Consequently, chiral hinge modes propagate along the horizontal hinges in a cuboid geometry and are robust against disorders. Our work bridges the higher-order topology and magnons in van der Waals platforms, and could be used for constructing topological magnonic devices.
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Submitted 16 February, 2022;
originally announced February 2022.
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Imaging of sub-$μ$A currents in bilayer graphene using a scanning diamond magnetometer
Authors:
M. L. Palm,
W. S. Huxter,
P. Welter,
S. Ernst,
P. J. Scheidegger,
S. Diesch,
K. Chang,
P. Rickhaus,
T. Taniguchi,
K. Wantanabe,
K. Ensslin,
C. L. Degen
Abstract:
Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in…
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Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in a diamond probe, we acquire magnetic field and current density maps with excellent sensitivities of 4.6 nT and 20 nA/$μ$m, respectively. The spatial resolution is 50-100 nm. We further introduce a set of methods for increasing the technique's dynamic range and for mitigating undesired back-action of magnetometry operation on the electronic transport. Current density maps reveal local variations in the flow pattern and global tuning of current flow via the back-gate potential. No signatures of hydrodynamic transport are observed. Our experiments demonstrate the feasibility for imaging subtle features of nanoscale transport in two-dimensional materials and conductors.
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Submitted 18 January, 2022;
originally announced January 2022.
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Picocavity-controlled Sub-nanometer Resolved Single Molecule Non-linear Fluorescence
Authors:
Siyuan Lyu,
Yuan Zhang,
Yao Zhang,
Kainan Chang,
Guangchao Zheng,
Luxia Wang
Abstract:
In this article, we address fluorescence of single molecule inside a plasmonic picocavity by proposing a semi-classical theory via combining the macroscopic quantum electrodynamics theory and the open quantum system theory. To gain insights into the experimental results [Nat. Photonics, 14, 693 (2020)], we have further equipped this theory with the classical electromagnetic simulation of the pico-…
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In this article, we address fluorescence of single molecule inside a plasmonic picocavity by proposing a semi-classical theory via combining the macroscopic quantum electrodynamics theory and the open quantum system theory. To gain insights into the experimental results [Nat. Photonics, 14, 693 (2020)], we have further equipped this theory with the classical electromagnetic simulation of the pico-cavity, formed by single atom decorated silver STM tip and a silver substrate, and the time-dependent density functional theory calculation of zinc phthalocyanine molecule. Our simulations not only reproduce the fluorescence spectrum as measured in the experiment, confirming the influence of extreme field confinement afforded by the picocavity, but also reveal Rabi oscillation dynamics and Mollow triplets spectrum for moderate laser excitation. Thus, our study highlights the possibility of coherently manipulating the molecular state and exploring non-linear optical phenomena with the plasmonic picocavity.
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Submitted 17 December, 2021;
originally announced December 2021.
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Quantum Hall phase in graphene engineered by interfacial charge coupling
Authors:
Yaning Wang,
Xiang Gao,
Kaining Yang,
**fan Gu,
Xin Lu,
Shihao Zhang,
Yuchen Gao,
Naijie Ren,
Baojuan Dong,
Yuhang Jiang,
Kenji Watanabe,
Takashi Taniguchi,
Jun Kang,
Wenkai Lou,
**hai Mao,
Jianpeng Liu,
Yu Ye,
Zheng Vitto Han,
Kai Chang,
**g Zhang,
Zhidong Zhang
Abstract:
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain ch…
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Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain challenging. Here we demonstrate the observation of an unusual QHE, which differs markedly from the known picture, in graphene samples in contact with an anti-ferromagnetic insulator CrOCl equipped with dual gates. Owing to the peculiar interfacial coupling, Landau levels in monolayer graphene remain intact at negative filling fractions, but largely deviated for the positive gate-do** range. The latter QHE phase even presents in the limit of zero magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field $D$ and the magnetic field $B$. This characteristic prevails up to 100 K in a sufficiently wide effective do** range from 0 to 10$^{13}$ cm$^{-2}$. Our findings thus open up new routes for manipulating the quantum electronic states, which may find applications in such as quantum metrology.
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Submitted 25 September, 2022; v1 submitted 6 October, 2021;
originally announced October 2021.
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Intermediate Polaronic Charge Transport in Organic Crystals from a Many-Body First-Principles Approach
Authors:
Benjamin K. Chang,
**-Jian Zhou,
Nien-En Lee,
Marco Bernardi
Abstract:
Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hop** due to localized polarons formed by strong e-ph interactions. However…
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Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hop** due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hop**. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in OMCs in the intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5$-$2 of experiment between 100$-$300 K. Our analysis reveals that electrons couple strongly with both inter- and intramolecular phonons in the intermediate regime, as evidenced by the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation. Our study advances quantitative modeling of charge transport in complex organic crystals.
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Submitted 7 January, 2022; v1 submitted 17 June, 2021;
originally announced June 2021.
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Dynamical prediction of two meteorological factors using the deep neural network and the long short-term memory $(2)$
Authors:
Ki-Hong Shin,
Jae-Won Jung,
Ki-Ho Chang,
Dong-In Lee,
Cheol-Hwan You,
Kyungsik Kim
Abstract:
This paper presents the predictive accuracy using two-variate meteorological factors, average temperature and average humidity, in neural network algorithms. We analyze result in five learning architectures such as the traditional artificial neural network, deep neural network, and extreme learning machine, long short-term memory, and long-short-term memory with peephole connections, after manipul…
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This paper presents the predictive accuracy using two-variate meteorological factors, average temperature and average humidity, in neural network algorithms. We analyze result in five learning architectures such as the traditional artificial neural network, deep neural network, and extreme learning machine, long short-term memory, and long-short-term memory with peephole connections, after manipulating the computer-simulation. Our neural network modes are trained on the daily time-series dataset during seven years (from 2014 to 2020). From the trained results for 2500, 5000, and 7500 epochs, we obtain the predicted accuracies of the meteorological factors produced from outputs in ten metropolitan cities (Seoul, Daejeon, Daegu, Busan, Incheon, Gwangju, Pohang, Mokpo, Tongyeong, and Jeonju). The error statistics is found from the result of outputs, and we compare these values to each other after the manipulation of five neural networks. As using the long-short-term memory model in testing 1 (the average temperature predicted from the input layer with six input nodes), Tonyeong has the lowest root mean squared error (RMSE) value of 0.866 $(%)$ in summer from the computer-simulation in order to predict the temperature. To predict the humidity, the RMSE is shown the lowest value of 5.732 $(%)$, when using the long short-term memory model in summer in Mokpo in testing 2 (the average humidity predicted from the input layer with six input nodes). Particularly, the long short-term memory model is is found to be more accurate in forecasting daily levels than other neural network models in temperature and humidity forecastings. Our result may provide a computer-simuation basis for the necessity of exploring and devel** a novel neural network evaluation method in the future.
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Submitted 28 April, 2021;
originally announced April 2021.
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Dynamical prediction of two meteorological factors using the deep neural network and the long short term memory $(1)$
Authors:
Ki Hong Shin,
Jae Won Jung,
Sung Kyu Seo,
Cheol Hwan You,
Dong In Lee,
Jisun Lee,
Ki Ho Chang,
Woon Seon Jung,
Kyungsik Kim
Abstract:
It is important to calculate and analyze temperature and humidity prediction accuracies among quantitative meteorological forecasting. This study manipulates the extant neural network methods to foster the predictive accuracy. To achieve such tasks, we analyze and explore the predictive accuracy and performance in the neural networks using two combined meteorological factors (temperature and humid…
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It is important to calculate and analyze temperature and humidity prediction accuracies among quantitative meteorological forecasting. This study manipulates the extant neural network methods to foster the predictive accuracy. To achieve such tasks, we analyze and explore the predictive accuracy and performance in the neural networks using two combined meteorological factors (temperature and humidity). Simulated studies are performed by applying the artificial neural network (ANN), deep neural network (DNN), extreme learning machine (ELM), long short-term memory (LSTM), and long short-term memory with peephole connections (LSTM-PC) machine learning methods, and the accurate prediction value are compared to that obtained from each other methods. Data are extracted from low frequency time-series of ten metropolitan cities of South Korea from March 2014 to February 2020 to validate our observations. To test the robustness of methods, the error of LSTM is found to outperform that of the other four methods in predictive accuracy. Particularly, as testing results, the temperature prediction of LSTM in summer in Tongyeong has a root mean squared error (RMSE) value of 0.866 lower than that of other neural network methods, while the mean absolute percentage error (MAPE) value of LSTM for humidity prediction is 5.525 in summer in Mokpo, significantly better than other metropolitan cities.
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Submitted 16 January, 2021;
originally announced January 2021.
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Development of Si based anodes for Li-ion batteries from a rational component design
Authors:
Keke Chang,
Yong Du
Abstract:
Inspired by the wisdom of metallurgists in designing new alloys, the Integrated Computational Materials Engineering (ICME) based design strategy is proposed for development of Si based anodes for Li-ion batteries (LIBs). The strategy starts with a rational component design of Si-X, where X is the additive component(s) hel** to overcome the problems of the pure Si anodes. An optimization of the c…
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Inspired by the wisdom of metallurgists in designing new alloys, the Integrated Computational Materials Engineering (ICME) based design strategy is proposed for development of Si based anodes for Li-ion batteries (LIBs). The strategy starts with a rational component design of Si-X, where X is the additive component(s) hel** to overcome the problems of the pure Si anodes. An optimization of the composition, structure, property and performance of the Si-X anode is followed to fulfill the requirements for its commercialization. In addition to the widely applied designing scheme for the nanostructured Si anodes, the presently proposed one from the ICME based rational component design is expected to accelerate the discovery of the promising Si based anodes for commercial LIBs.
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Submitted 7 December, 2020;
originally announced December 2020.
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Exciton vortices in two-dimensional hybrid perovskite monolayers
Authors:
Yingda Chen,
Dong Zhang,
Kai Chang
Abstract:
We study theoretically the exciton Bose-Einstein condensation and exciton vortices in a two-dimensional (2D) perovskite (PEA)2PbI4 monolayer. Combining the first-principles calculations and the Keldysh model, the exciton binding energy of (PEA)2PbI4 in a monolayer can approach hundreds meV, which make it possible to observe the excitonic effect at room temperature. Due to the large exciton binding…
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We study theoretically the exciton Bose-Einstein condensation and exciton vortices in a two-dimensional (2D) perovskite (PEA)2PbI4 monolayer. Combining the first-principles calculations and the Keldysh model, the exciton binding energy of (PEA)2PbI4 in a monolayer can approach hundreds meV, which make it possible to observe the excitonic effect at room temperature. Due to the large exciton binding energy, and hence the high density of excitons, we find that the critical temperature of the exciton condensation could approach the liquid nitrogen regime. In presence of perpendicular electric fields, the dipole-dipole interaction between excitons is found to drive the condensed excitons into patterned vortices, as the evolution time of vortex patterns is comparable to the exciton lifetime.
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Submitted 5 November, 2020;
originally announced November 2020.
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Colloquium: Physical properties of group-IV monochalcogenide monolayers
Authors:
Salvador Barraza-Lopez,
Benjamin M. Fregoso,
John W. Villanova,
Stuart S. P. Parkin,
Kai Chang
Abstract:
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also d…
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We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.
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Submitted 9 September, 2020;
originally announced September 2020.
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Giant Flexoelectricity in Bent Silicon Thinfilms
Authors:
Dong-Bo Zhang,
Kai Chang
Abstract:
We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variatio…
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We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.
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Submitted 26 August, 2020;
originally announced August 2020.
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Geometric photon-drag effect and nonlinear shift current in centrosymmetric crystals
Authors:
Li-kun Shi,
Dong Zhang,
Kai Chang,
Justin C. W. Song
Abstract:
The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a non-zero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a `shift current dipole' (a geometric quantity characterizing in…
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The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a non-zero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a `shift current dipole' (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.
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Submitted 11 June, 2020;
originally announced June 2020.
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Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer
Authors:
Amilcar Bedoya-Pinto,
**g-Rong Ji,
Avanindra Pandeya,
Pierluigi Gargiani,
Manuel Valvidares,
Paolo Sessi,
Florin Radu,
Kai Chang,
Stuart Parkin
Abstract:
Long before the recent fascination with two-dimensional materials, the critical behaviour and universality scaling of phase transitions in low-dimensional systems has been a topic of great interest. Particularly intriguing is the case of long-range magnetic order in two dimensions, once considered to be excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an o…
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Long before the recent fascination with two-dimensional materials, the critical behaviour and universality scaling of phase transitions in low-dimensional systems has been a topic of great interest. Particularly intriguing is the case of long-range magnetic order in two dimensions, once considered to be excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an out-of-plane anisotropy has been shown to stabilize 2D magnetic order, this proof has remained elusive for a 2D magnet with in-plane rotational symmetry. Here, we construct a nearly ideal easy-plane system, a CrCl3 monolayer grown on Graphene/6H-SiC (0001), and unambiguously demonstrate robust in-plane ferromagnetic ordering with a critical scaling behaviour characteristic of a 2D-XY system. These observations suggest the first realization of a finite-size Berezinskii-Kosterlitz-Thouless (BKT) phase transition in a large-area, quasi-freestanding, van der Waals monolayer magnet with a XY universality class; and further constitute an ideal platform to study exotic phenomena like superfluid spin transport or 2D topological in-plane spin textures -- such as merons.
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Submitted 16 February, 2021; v1 submitted 13 June, 2020;
originally announced June 2020.
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Experimental formation of monolayer group-IV monochalcogenides
Authors:
Kai Chang,
Stuart S. P. Parkin
Abstract:
Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A fu…
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Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-develo** field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.
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Submitted 12 June, 2020;
originally announced June 2020.
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Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa
Authors:
Paolo Sessi,
Feng-Ren Fan,
Felix Küster,
Kaustuv Manna,
Niels B. M. Schröter,
**g-Rong Ji,
Samuel Stolz,
Jonas A. Krieger,
Ding Pei,
Timur K. Kim,
Pavel Dudin,
Cephise Cacho,
Roland Widmer,
Horst Borrmann,
Wujun Shi,
Kai Chang,
Yan Sun,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they…
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It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.
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Submitted 6 May, 2020;
originally announced May 2020.
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Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature
Authors:
Kai Chang,
Felix Küster,
Brandon J. Miller,
**g-Rong Ji,
Jia-Lu Zhang,
Paolo Sessi,
Salvador Barraza-Lopez,
Stuart S. P. Parkin
Abstract:
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarizat…
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Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
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Submitted 25 August, 2020; v1 submitted 8 April, 2020;
originally announced April 2020.
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Spin-Triplet Excitonic Insulator: The Case of Graphone
Authors:
Zeyu Jiang,
Wenkai Lou,
Yu Liu,
Yuanchang Li,
Haifeng Song,
Kai Chang,
Wenhui Duan,
Shengbai Zhang
Abstract:
While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detect…
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While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in graphone, which offers yet another test by experiment.
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Submitted 31 March, 2020; v1 submitted 12 November, 2019;
originally announced November 2019.
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Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films
Authors:
Amilcar Bedoya-Pinto,
Avanindra Kumar Pandeya,
Defa Liu,
Hakan Deniz,
Kai Chang,
Hengxin Tan,
Hyeon Han,
Jagannath Jena,
Ilya Kostanovskiy,
Stuart Parkin
Abstract:
Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here,…
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Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled do** to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.
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Submitted 27 September, 2019;
originally announced September 2019.
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Electrical Control of Large Rashba Effect in Oxide Heterostructures
Authors:
Yan Song,
Dong Zhang,
Ben Xu,
Kai Chang,
Ce-Wen Nan
Abstract:
Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin…
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Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin texture and drastic change of Rashba splitting strength with ferroelectric polarization switching are realized in the symmetric and asymmetric heterostructures, respectively. By artificially tuning the local ferroelectric displacement and the orbital hybridization, the synergetic effect of local potential gradient and orbital overlap on the dramatic change of splitting strength is confirmed. These results improve the feasibility of utilizing Rashba spin-orbit coupling in spintronic devices.
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Submitted 9 September, 2019;
originally announced September 2019.
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Multielemental single-atom-thick A layers in nanolaminated V2(Sn, A)C (A=Fe, Co, Ni, Mn) for tailoring magnetic properties
Authors:
Youbing Li,
Jun Lu,
Mian Li,
Keke Chang,
Xianhu Zha,
Yiming Zhang,
Ke Chen,
Per O. A. Persson,
Lars Hultman,
Per Eklund,
Shiyu Du,
Zhifang Chai,
Zhengren Huang,
Qing Huang
Abstract:
Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report a series of inherently nanolaminated V2(A'xSn1-x)C (A'=Fe, Co, Ni and Mn, and combinations thereof, with x=1/3) synthesized by an alloy-guided reaction…
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Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report a series of inherently nanolaminated V2(A'xSn1-x)C (A'=Fe, Co, Ni and Mn, and combinations thereof, with x=1/3) synthesized by an alloy-guided reaction. The simultaneous occupancy of the four magnetic elements and Sn, the individual single-atom-thick A layers in the compound constitute high-entropy-alloy analogues, two-dimensional in the sense that the alloying exclusively occurs in the A layers. V2(A'xSn1-x)C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. This two-dimensional alloying provides a structural-design route with expanded chemical space for discovering materials and exploit properties.
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Submitted 10 August, 2019;
originally announced August 2019.
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From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films
Authors:
Thaneshwor P. Kaloni,
Kai Chang,
Brandon J. Miller,
Qi-Kun Xue,
Xi Chen,
Shuai-Hua Ji,
Stuart S. P. Parkin,
Salvador Barraza-Lopez
Abstract:
SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic band…
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SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.
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Submitted 2 April, 2019;
originally announced April 2019.
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Few-shot machine learning in the three-dimensional Ising model
Authors:
Rui Zhang,
Bin Wei,
Dong Zhang,
Jia-Ji Zhu,
Kai Chang
Abstract:
We investigate theoretically the phase transition in three dimensional cubic Ising model utilizing state-of-the-art machine learning algorithms. Supervised machine learning models show high accuracies (~99\%) in phase classification and very small relative errors ($< 10^{-4}$) of the energies in different spin configurations. Unsupervised machine learning models are introduced to study the spin co…
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We investigate theoretically the phase transition in three dimensional cubic Ising model utilizing state-of-the-art machine learning algorithms. Supervised machine learning models show high accuracies (~99\%) in phase classification and very small relative errors ($< 10^{-4}$) of the energies in different spin configurations. Unsupervised machine learning models are introduced to study the spin configuration reconstructions and reductions, and the phases of reconstructed spin configurations can be accurately classified by a linear logistic algorithm. Based on the comparison between various machine learning models, we develop a few-shot strategy to predict phase transitions in larger lattices from trained sample in smaller lattices. The few-shot machine learning strategy for three dimensional(3D) Ising model enable us to study 3D ising model efficiently and provides a new integrated and highly accurate approach to other spin models.
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Submitted 20 March, 2019; v1 submitted 19 March, 2019;
originally announced March 2019.
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Quantum Spin Hall-like Phononic States in van der Waals Bilayers with Antiferromagnetic Ordering
Authors:
W. H. Han,
K. J. Chang
Abstract:
Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Chern numbers for each layer are opposite to each other. In bilayer CrI3 where antiferromagnetic ordering has been experimentally demonstrated, we show t…
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Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Chern numbers for each layer are opposite to each other. In bilayer CrI3 where antiferromagnetic ordering has been experimentally demonstrated, we show that the quantum spin Hall-like states appear with spatially separated chiral edge modes.
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Submitted 12 March, 2019;
originally announced March 2019.
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Even-odd dependent optical transitions of zigzag monolayer black phosphorus nanoribbons
Authors:
Pu Liu,
Xianzhe Zhu,
Xiaoying Zhou,
Benliang Zhou,
Wenhu Liao,
Guanghui Zhou,
Kai Chang
Abstract:
We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to t…
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We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the $N$-ZPNR with even- or odd-$N$ is qualitatively different. In specification, for even-$N$ ZPNRs the inter- (intra-) band selection rule is $Δn=$odd (even), since the parity of the wavefunction corresponding to the $n$th subband in the conduction (valence) band is $(-1)^{n}[(-1)^{(n+1)}]$ due to the presence of the $C_{2x}$ symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the $C_{2x}$ symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples.
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Submitted 10 March, 2019;
originally announced March 2019.
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Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
Authors:
Xingjun Wu,
Wenkai Lou,
Kai Chang,
Gerard Sullivan,
Rui-Rui Du
Abstract:
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy tha…
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We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy that are solely from the InAs layer, while swee** p in the InGaSb layer. We found a strongly enhanced resistive scattering signal as the carrier densities approach a total charge neutrality, n = p, which cannot be described by the Fermi-liquid theory. Results of data analysis for density, temperature, and magnetic field dependences are consistent with the emergence of excitonic coupling between the two layers, stressing the dominance of Coulomb interaction even in the presence of disorder.
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Submitted 10 March, 2019;
originally announced March 2019.
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A Metal-Insulator Transition via Wigner Crystallization in Boron Triangular Kagome Lattice
Authors:
Woo Hyun Han,
Sunghyun Kim,
In-Ho Lee,
Kee Joo Chang
Abstract:
The flat band has attracted a lot of attention because it gives rise to many exotic phases, as recently demonstrated in magic angle twisted bilayer graphene. Here, based on first-principles calculations, we identify a metal-insulator transition in boron triangular Kagome lattice with a spin-polarized flat band at 2/3-filling. This phase transition is accompanied by the formation of a Wigner crysta…
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The flat band has attracted a lot of attention because it gives rise to many exotic phases, as recently demonstrated in magic angle twisted bilayer graphene. Here, based on first-principles calculations, we identify a metal-insulator transition in boron triangular Kagome lattice with a spin-polarized flat band at 2/3-filling. This phase transition is accompanied by the formation of a Wigner crystal, which is driven by Fermi surface nesting effect and thereby strong electron-phonon interactions, kee** ferromagnetism. Our calculation results suggest that boron triangular Kagome lattices with partially filled flat bands may open a new playground for many exotic quantum phases in two-dimensional systems, such as Winger crystallization and fractional quantum Hall states.
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Submitted 22 February, 2019;
originally announced February 2019.
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Element Replacement Approach by Reaction with Lewis Acidic Molten Salts to Synthesize Nanolaminated MAX Phases and MXenes
Authors:
Mian Li,
Jun Lu,
Kan Luo,
Youbing Li,
Keke Chang,
Ke Chen,
Jie Zhou,
Johanna Rosen,
Lars Hultman,
Per Eklund,
Per O. Å. Persson,
Shiyu Du,
Zhifang Chai,
Zhengren Huang,
Qing Huang
Abstract:
Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesize a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition metal halides. The approach is a top-down route that enables the late transitional element…
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Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesize a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition metal halides. The approach is a top-down route that enables the late transitional element atom (Zn in the present case) to occupy the A site in the pre-existing MAX phase structure. Using this replacement reaction between Zn element from molten ZnCl2 and Al element in MAX phase precursors (Ti3AlC2, Ti2AlC, Ti2AlN, and V2AlC), novel MAX phases Ti3ZnC2, Ti2ZnC, Ti2ZnN, and V2ZnC were synthesized. When employing excess ZnCl2, Cl terminated MXenes (such as Ti3C2Cl2 and Ti2CCl2) were derived by a subsequent exfoliation of Ti3ZnC2 and Ti2ZnC due to the strong Lewis acidity of molten ZnCl2. These results indicate that A-site element replacement in traditional MAX phases by late transition metal halides opens the door to explore MAX phases that are not thermodynamically stable at high temperature and would be difficult to synthesize through the commonly employed powder metallurgy approach. In addition, this is the first time that exclusively Cl-terminated MXenes were obtained, and the etching effect of Lewis acid in molten salts provides a green and viable route to prepare MXenes through an HF-free chemical approach.
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Submitted 15 March, 2019; v1 submitted 15 January, 2019;
originally announced January 2019.
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Tilted Klein tunneling across atomically sharp interfaces
Authors:
Shu-Hui Zhang,
Wen Yang,
Kai Chang
Abstract:
Despite many similarities between electronics and optics, the hop** of the electron on a discrete atomic lattice gives rise to energy band nonparabolicity and anisotropy. The crucial influences of this effect on material properties and its incorporation into the continuum model have received widespread attention in the past half century. Here we predict the existence of a different effect due to…
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Despite many similarities between electronics and optics, the hop** of the electron on a discrete atomic lattice gives rise to energy band nonparabolicity and anisotropy. The crucial influences of this effect on material properties and its incorporation into the continuum model have received widespread attention in the past half century. Here we predict the existence of a different effect due to the hop** of the electron across an atomically sharp interface. For a general lattice, its influence on transport could be equally important as the energy band nonparabolicity/anisotropy, but cannot be incorporated into the continuum model. On the honeycomb lattice of graphene, it leads to the breakdown of the conventional Klein tunneling -- one of the exotic phenomena of relativistic particles -- and the onset of tilted Klein tunneling. This works identifies a unique feature of the discrete atomic lattice for transport, which is relevant for ballistic electronic devices at high carrier densities.
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Submitted 28 April, 2019; v1 submitted 18 December, 2018;
originally announced December 2018.
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Selective generation and amplification of RKKY interactions by P-N interface
Authors:
Shu-Hui Zhang,
Jia-Ji Zhu,
Wen Yang,
Kai Chang
Abstract:
We propose a physical mechanism to generate and selectively amplify anisotropic Rudermann-Kittel-Kasuya-Yosida (RKKY) interactions between two local spins. The idea is to combine the deflection of the carrier velocity by a P-N interface and the locking of this velocity to the carrier spin orientation via spin-orbit coupling. We provide analytical and numerical results to demonstrate this mechanism…
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We propose a physical mechanism to generate and selectively amplify anisotropic Rudermann-Kittel-Kasuya-Yosida (RKKY) interactions between two local spins. The idea is to combine the deflection of the carrier velocity by a P-N interface and the locking of this velocity to the carrier spin orientation via spin-orbit coupling. We provide analytical and numerical results to demonstrate this mechanism on the surface of a topological insulator P-N junction. This work identifies the P-N interface as a second knob which, together with the carrier density, enables independent control of the strength and anisotropy of the RKKY interaction over a wide range. These findings may be relevant to scalable quantum computation and two-impurity quantum criticality.
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Submitted 5 December, 2018;
originally announced December 2018.
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Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
Authors:
Fangyuan Yang,
Zuocheng Zhang,
Nai Zhou Wang,
Guo Jun Ye,
Wenkai Lou,
Xiaoying Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Kai Chang,
Xian Hui Chen,
Yuanbo Zhang
Abstract:
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement…
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The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement in the sample quality of the 2D electron gas (2DEG) has however been only moderate; quantum Hall effect remained elusive. Here, we obtain high quality black phosphorus 2DEG by defining the 2DEG region with a prepatterned graphite local gate. The graphite local gate screens the impurity potential in the 2DEG. More importantly, it electrostatically defines the edge of the 2DEG, which facilitates the formation of well-defined edge channels in the quantum Hall regime. The improvements enable us to observe precisely quantized Hall plateaus in electron-doped black phosphorus FET. Magneto-transport measurements under high magnetic fields further revealed a large effective mass and an enhanced Landé g-factor, which points to strong electron-electron interaction in black phosphorus 2DEG. Such strong interaction may lead to exotic many-body quantum states in the fractional quantum Hall regime.
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Submitted 20 September, 2018;
originally announced September 2018.
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In-Plane Ferroelectric Tunnel Junction
Authors:
Huitao Shen,
Junwei Liu,
Kai Chang,
Liang Fu
Abstract:
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ferroelectric tunnel junction". Apart from non-volatilit…
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The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ferroelectric tunnel junction". Apart from non-volatility, lower power usage and faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of faster reading operation and non-destructive reading process, thus overcomes the write-after-read problem that widely exists in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films is a promising material platform to realize our proposal.
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Submitted 20 February, 2019; v1 submitted 19 July, 2018;
originally announced July 2018.
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Juggling with light
Authors:
Albert Johann Bae,
Dag Hanstorp,
Kelken Chang
Abstract:
We discovered that when a pair of small particles is optically levitated, the particles execute a dance whose motion resembles the orbits of balls being juggled. This motion lies in a plane perpendicular to the polarization of the incident light. We ascribe the dance to a mechanism by which the dominant force on each particle cyclically alternates between radiation pressure and gravity as each par…
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We discovered that when a pair of small particles is optically levitated, the particles execute a dance whose motion resembles the orbits of balls being juggled. This motion lies in a plane perpendicular to the polarization of the incident light. We ascribe the dance to a mechanism by which the dominant force on each particle cyclically alternates between radiation pressure and gravity as each particle takes turns eclipsing the other. We explain the plane of motion by considering the anisotropic scattering of polarized light at a curved interface.
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Submitted 17 January, 2019; v1 submitted 6 April, 2018;
originally announced April 2018.