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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.
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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials
Authors:
S. -C. Lee,
Y. -T. Chen,
C. -R. Liu,
S. -M. Wang,
Y. -T. Tang,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee
Abstract:
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the therma…
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Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
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Submitted 1 June, 2023;
originally announced July 2023.
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Magnetic Properties and Electronic Configurations of Mn Ions in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by X-ray Magnetic Circular Dichroism and Resonant Inelastic X-ray Scattering
Authors:
H. Suzuki,
G. Q. Zhao,
J. Okamoto,
S. Sakamoto,
Z. -Y. Chen,
Y. Nonaka,
G. Shibata,
K. Zhao,
B. J. Chen,
W. -B. Wu,
F. -H. Chang,
H. -J. Lin,
C. -T. Chen,
A. Tanaka,
M. Kobayashi,
Bo Gu,
S. Maekawa,
Y. J. Uemura,
C. Q. **,
D. J. Huang,
A. Fujimori
Abstract:
The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital…
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The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital moment of $0.05μ_{\text{B}}$/Mn. This indicates that the Mn atoms are in the high-spin configurations of $d^{5}$, whereas the presence of competing ferromagnetic and antiferromagnetic interactions between the Mn ions reduces the net spin moment. RIXS spectra show broad peaks from 1 to 6 eV energy loss, which originate from the $d$-$d$ crystal field excitations of the Mn ions. Based on a comparison of the RIXS line shapes with those of Ga$_{1-x}$Mn$_{x}$As, we conclude that the ground state of Mn in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ consists not only of the charge-transferred $3d^{5}\underline{L}$ electron configuration ($\underline{L}$: ligand hole) with weakly bound holes as in Ga$_{1-x}$Mn$_{x}$As, but also of the pure $3d^{5}$ configuration with free holes.
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Submitted 31 January, 2022;
originally announced January 2022.
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Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor Ba$_{1-y}$K$_{y}$(Zn$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$ Isostructural to Fe-based Superconductors
Authors:
H. Suzuki,
K. Zhao,
G. Shibata,
Y. Takahashi,
S. Sakamoto,
K. Yoshimatsu,
B. J. Chen,
H. Kumigashira,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
Bo Gu,
S. Maekawa,
Y. J. Uemura,
C. Q. **,
A. Fujimori
Abstract:
The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray absorption spectroscopy (XAS) and resonance photoemission spectroscopy (RPES). Mn $L_{2,3}$-edge XAS indicates that the doped Mn atoms have the valence 2+ and strong…
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The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray absorption spectroscopy (XAS) and resonance photoemission spectroscopy (RPES). Mn $L_{2,3}$-edge XAS indicates that the doped Mn atoms have the valence 2+ and strongly hybridize with the $4p$ orbitals of the tetrahedrally coordinating As ligands. The Mn $3d$ partial density of states (PDOS) obtained by RPES shows a peak around 4 eV and relatively high between 0-2 eV below the Fermi level ($E_{F}$) with little contribution at $E_{F}$, similar to that of the archetypal DMS Ga$_{1-x}$Mn$_{x}$As. This energy level creates $d^{5}$ electron configuration with $S=5/2$ local magnetic moments at the Mn atoms. Hole carriers induced by K substitution for Ba atoms go into the top of the As $4p$ valence band and are weakly bound to the Mn local spins. The ferromagnetic correlation between the local spins mediated by the hole carriers induces ferromagnetism in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$
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Submitted 26 January, 2015; v1 submitted 9 October, 2014;
originally announced October 2014.
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Phase diagram of Ca$_{1-x}$Ce$_x$MnO$_3$ thin films studied by X-ray magnetic circular dichroism
Authors:
T. Harano,
G. Shibata,
K. Yoshimatsu,
K. Ishigami,
V. K. Verma,
Y. Takahashi,
T. Kadono,
T. Yoshida,
A. Fujimori,
T. Koide,
F. -H. Chang,
H. -J. Lin,
D. -J. Huang,
C. -T. Chen,
P. -H. Xiang,
H. Yamada,
A. Sawa
Abstract:
In the perovskite-type Ca$_{1-x}$Ce$_{x}$MnO$_{3}$ (CCMO), one can control the transport and magnetic properties through varying Ce content. In the case of thin films, the properties can also be controlled by epitaxial strain from the substrate through changing it such as YAlO$_{3}$ (YAO), NdAlO$_{3}$ (NAO), and LaSrAlO$_{4}$ (LSAO). However, one cannot measure the magnetization of thin films on N…
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In the perovskite-type Ca$_{1-x}$Ce$_{x}$MnO$_{3}$ (CCMO), one can control the transport and magnetic properties through varying Ce content. In the case of thin films, the properties can also be controlled by epitaxial strain from the substrate through changing it such as YAlO$_{3}$ (YAO), NdAlO$_{3}$ (NAO), and LaSrAlO$_{4}$ (LSAO). However, one cannot measure the magnetization of thin films on NAO substrates by conventional magnetization measurements because of the strong paramagnetic signals from the Nd$^{3+}$ ions. In order to eliminate the influence of Nd$^{3+}$ and to identify magnetic phases of the CCMO thin films, we have performed element-selective X-ray magnetic circular dichroism (XMCD) measurements of the Mn 2{\it p} core level. By studying the anisotropy of the XMCD intensity, we could unambiguously determine the magnetic phase diagram of the CCMO thin films.
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Submitted 23 October, 2013;
originally announced October 2013.
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Observation of magnetically hard grain boundaries in double-perovskite Sr$_{2}$FeMoO$_{6}$
Authors:
Y. Takahashi,
V. K. Verma,
G. Shibata,
T. Harano,
K. Ishigami,
K. Yoshimatsu,
T. Kadono,
A. Fujimori,
A. Tanaka,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
B. Pal,
D. D. Sarma
Abstract:
Unusual low temperature magneto-resistance (MR) of ferromagnetic Sr$_{2}$FeMoO$_{6}$ polycrystals has been attributed to magnetically hard grain boundaries which act as spin valves. We detected the different magnetic hysteresis curves for the grains and the grain boundaries of polycrystalline Sr$_{2}$FeMoO$_{6}$ by utilizing the different probing depths of the different detection modes of x-ray ab…
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Unusual low temperature magneto-resistance (MR) of ferromagnetic Sr$_{2}$FeMoO$_{6}$ polycrystals has been attributed to magnetically hard grain boundaries which act as spin valves. We detected the different magnetic hysteresis curves for the grains and the grain boundaries of polycrystalline Sr$_{2}$FeMoO$_{6}$ by utilizing the different probing depths of the different detection modes of x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), namely, the total electron yield (TEY) mode (probing depth $\sim$5 nm) and the total fluorescence yield (TFY) mode (probing depth $\sim$100 nm). At 20 K, the magnetic coercivity detected in the TEY mode ($H_{\rm c,TEY}$) was several times larger than that in the TFY mode ($H_{\rm c,TFY}$), indicating harder ferromagnetism of the grain boundaries than that of the grains. At room temperature, the grain boundary magnetism became soft and $H_{\rm c,TEY}$ and $H_{\rm c,TFY}$ were nearly the same. From line-shape analysis of the XAS and XMCD spectra, we found that in the grain boundary region the ferromagnetic component is dominated by Fe$^{2+}$ or well-screened signals while the non-magnetic component is dominated by Fe$^{3+}$ or poorly-screened signals.
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Submitted 20 May, 2013;
originally announced May 2013.
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X-ray absorption spectroscopy and X-ray magnetic circular dichroism studies of transition-metal-co-doped ZnO nano-particles
Authors:
T. Kataoka,
Y. Yamazaki,
V. R. Singh,
Y. Sakamoto,
K. Ishigami,
V. K. Verma,
A. Fujimori,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
D. Asakura,
T. Koide,
A. Tanaka,
D. Karmakar,
S. K. Mandal,
T. K. Nath,
I. Dagupta
Abstract:
We report on x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) studies of the paramagnetic (Mn,Co)-co-doped ZnO and ferromagnetic (Fe,Co)-co-doped ZnO nano-particles. Both the surface-sensitive total-electron-yield mode and the bulk-sensitive total-fluorescence-yield mode have been employed to extract the valence and spin states of the surface and inner core regions…
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We report on x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) studies of the paramagnetic (Mn,Co)-co-doped ZnO and ferromagnetic (Fe,Co)-co-doped ZnO nano-particles. Both the surface-sensitive total-electron-yield mode and the bulk-sensitive total-fluorescence-yield mode have been employed to extract the valence and spin states of the surface and inner core regions of the nano-particles. XAS spectra reveal that significant part of the doped Mn and Co atoms are found in the trivalent and tetravalent state in particular in the surface region while majority of Fe atoms are found in the trivalent state both in the inner core region and surface region. The XMCD spectra show that the Fe$^{3+}$ ions in the surface region give rise to the ferromagnetism while both the Co and Mn ions in the surface region show only paramagnetic behaviors. The transition-metal atoms in the inner core region do not show magnetic signals, meaning that they are antiferromagnetically coupled. The present result combined with the previous results on transition-metal-doped ZnO nano-particles and nano-wires suggest that doped holes, probably due to Zn vacancy formation at the surfaces of the nano-particles and nano-wires, rather than doped electrons are involved in the occurrence of ferromagnetism in these systems.
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Submitted 18 August, 2012; v1 submitted 15 August, 2012;
originally announced August 2012.
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Ferromagnetism of cobalt-doped anatase TiO$_2$ studied by bulk- and surface-sensitive soft x-ray magnetic circular dichroism
Authors:
V. R. Singh,
K. Ishigami,
V. K. Verma,
G. Shibata,
Y. Yamazaki,
T. Kataoka,
A. Fujimori,
F. -H. Chang,
D. -J. Huang,
H. -J. Lin,
C. T. Chen,
Y. Yamada,
T. Fukumura,
M. Kawasaki
Abstract:
We have studied magnetism in anatase Ti$_{1-x}$Co$_x$O$_{2-δ}$ ({\it x} = 0.05) thin films with various electron carrier densities, by soft x-ray magnetic circular dichroism (XMCD) measurements at the Co $L_{2,3}$ absorption edges. For electrically conducting samples, the magnetic moment estimated by XMCD was $<$ 0.3 $μ_B$/Co using the surface-sensitive total electron yield (TEY) mode, while it wa…
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We have studied magnetism in anatase Ti$_{1-x}$Co$_x$O$_{2-δ}$ ({\it x} = 0.05) thin films with various electron carrier densities, by soft x-ray magnetic circular dichroism (XMCD) measurements at the Co $L_{2,3}$ absorption edges. For electrically conducting samples, the magnetic moment estimated by XMCD was $<$ 0.3 $μ_B$/Co using the surface-sensitive total electron yield (TEY) mode, while it was 0.3-2.4 $μ_B$/Co using the bulk-sensitive total fluorescence yield (TFY) mode. The latter value is in the same range as the saturation magnetization 0.6-2.1 $μ_B$/Co deduced by SQUID measurement. The magnetization and the XMCD intensity increased with carrier density, consistent with the carrier-induced origin of the ferromagnetism.
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Submitted 1 June, 2012;
originally announced June 2012.
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Ferromagnetic interaction between Cu ions in the bulk region of Cu-doped ZnO nanowires
Authors:
T. Kataoka,
Y. Yamazaki,
V. R. Singh,
A. Fujimori,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
G. Z. Xing,
J. W. Seo,
C. Panagopoulos,
T. Wu
Abstract:
We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [G. Z. Xing ${et}$ ${al}$., Adv. Mater. {\bf 20}, 3521 (2008).], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the XPS and XAS results, we find that the Cu atoms…
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We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [G. Z. Xing ${et}$ ${al}$., Adv. Mater. {\bf 20}, 3521 (2008).], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the XPS and XAS results, we find that the Cu atoms are in the "Cu$^{3+}$" state with mixture of Cu$^{2+}$ in the bulk region ($\sim$ 100 nm), and that "Cu$^{3+}$" ions are dominant in the surface region ($\sim$ 5 nm), i.e., the surface electronic structure of the surface region differs from the bulk one. From the magnetic field and temperature dependences of the XMCD intensity, we conclude that the ferromagnetic interaction in ZnO:Cu NWs comes from the Cu$^{2+}$ and "Cu$^{3+}$" states in the bulk region, and that most of the doped Cu ions are magnetically inactive probably because they are antiferromagnetically coupled with each other.
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Submitted 16 October, 2011;
originally announced October 2011.
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Bulk and Surface Magnetization of Co atoms in Rutile Ti_[1-x]Co_xO_[2-delta] Thin Films Revealed by X-Ray Magnetic Circular Dichroism
Authors:
V. R. Singh,
Y. Sakamoto,
T. Kataoka,
M. Kobayashi,
Y. Yamazaki,
A. Fujimori,
F. -H. Chang,
D. -J. Huang,
H. -J. Lin,
C. T. Chen,
H. Toyosaki,
T. Fukumura,
M. Kawasaki
Abstract:
We have studied magnetism in Ti_[1-x]Co_xO_[2-δ] thin films with various x and δby soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was 0.15-0.24 μβ/Co in the surface, while in the bulk it was 0.82-2.25 μβ/Co, which is in the same range as the saturation magnetization of 1.0-1.5 μβ/Co. Theseresults suggest tha…
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We have studied magnetism in Ti_[1-x]Co_xO_[2-δ] thin films with various x and δby soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was 0.15-0.24 μβ/Co in the surface, while in the bulk it was 0.82-2.25 μβ/Co, which is in the same range as the saturation magnetization of 1.0-1.5 μβ/Co. Theseresults suggest that the intrinsic origin of the erromagnetism. The smaller moment of Co atom at surface is an indication of a magnetically dead layer of a few nm thick at the surface of the thin films.
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Submitted 1 April, 2011; v1 submitted 31 March, 2011;
originally announced March 2011.
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Effect of co-do** of donor and acceptor impurities in the ferromagnetic semiconductor Zn1-xCrxTe studied by soft x-ray magnetic circular dichroism
Authors:
Y. Yamazaki,
T. Kataoka,
V. R. Singh,
A. Fujimori,
F. -H. Chang,
D. -J. Huang,
H. -J. Lin,
C. T. Chen,
K. Ishikawa,
K. Zhang,
S. Kuroda
Abstract:
We have performed x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) studies of the diluted ferromagnetic semiconductor Zn$_{1-\textit{x}}$Cr$_\textit{x}$Te doped with iodine (I) or nitrogen (N), corresponding to electron or hole do**, respectively. From the shape of the Cr $2p$ absorption peak in the XAS spectra, it was concluded that Cr ions in the undoped, I-dope…
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We have performed x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) studies of the diluted ferromagnetic semiconductor Zn$_{1-\textit{x}}$Cr$_\textit{x}$Te doped with iodine (I) or nitrogen (N), corresponding to electron or hole do**, respectively. From the shape of the Cr $2p$ absorption peak in the XAS spectra, it was concluded that Cr ions in the undoped, I-doped and lightly N-doped samples are divalent (Cr$^{2+}$), while Cr$^{2+}$ and trivalent (Cr$^{3+}$) coexist in the heavily N-doped sample. This result indicates that the doped nitrogen atoms act as acceptors but that doped holes are located on the Cr ions. In the magnetic-field dependence of the XMCD signal at the Cr $2p$ absorption edge, ferromagnetic behaviors were observed in the undoped, I-doped, and lightly N-doped samples, while ferromagnetism was considerably suppressed in heavily N-doped sample, which is consistent with the results of magnetization measurements.
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Submitted 25 March, 2011;
originally announced March 2011.
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Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nano-particles
Authors:
T. Kataoka,
M. Kobayashi,
Y. Sakamoto,
G. S. Song,
A. Fujimori,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
T. Ohkochi,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
A. Tanaka,
S. K. Mandal,
T. K. Nath,
D. Karmakar,
I. Dasgupta
Abstract:
We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe a…
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We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe$^{3+}$ ionic state with mixture of a small amount of Fe$^{2+}$ and that Fe$^{3+}$ ions are dominant in the surface region of the nano-particles. It is shown that the room temperature ferromagnetism in the Zn$_{0.9}$Fe$_{0.1}$O nano-particles is primarily originated from the antiferromagnetic coupling between unequal amounts of Fe$^{3+}$ ions occupying two sets of nonequivalent positions in the region of the XMCD probing depth of $\sim$ 2-3 nm.
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Submitted 12 April, 2009;
originally announced April 2009.
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Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-do** effects studied by photoemission and X-ray absorption spectroscopy
Authors:
G. S. Song,
M. Kobayashi,
J. I. Hwang,
T. Kataoka,
M. Takizawa,
A. Fujimori,
T. Ohkouchi,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
F. -H. Chang,
L. Lee,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
S. Kimura,
M. Funakoshi,
S. Hasegawa,
H. Asahi
Abstract:
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si do** on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si…
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The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si do** on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si do**, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron do**. Possibility of Cr-rich cluster growth by Si do** are discussed based on the spectroscopic and magnetization data.
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Submitted 21 May, 2008;
originally announced May 2008.
