Showing 1–50 of 390 results for author: Chang, C

Electrical control of intrinsic nonlinear Hall effect in antiferromagnetic topological insulator sandwiches

Authors: Ruobing Mei, Daniel Kaplan, Binghai Yan, Cui-Zu Chang, Chao-Xing Liu

Abstract: Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry via external electric fields can lead to a dramatic enhancement of NHE, thus allowing for an electric control of NHE. Microscopically, this is because breaking… ▽ More Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry via external electric fields can lead to a dramatic enhancement of NHE, thus allowing for an electric control of NHE. Microscopically, this is because breaking PT symmetry can lift spin degeneracy of a Kramers' pair, giving rise to additional contributions within one Kramers' pair of bands. We demonstrate this enhancement through a model Hamiltonian that describes an antiferromagnetic topological insulator sandwich structure. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Physical properties and electronic structure of the two-gap superconductor V$_{2}$Ga$_{5}$

Authors: P. -Y. Cheng, Mohamed Oudah, T. -L. Hung, C. -E. Hsu, C. -C. Chang, J. -Y. Haung, T. -C. Liu, C. -M. Cheng, M. -N. Ou, W. -T. Chen, L. Z. Deng, C. -C. Lee, Y. -Y. Chen, C. -N. Kuo, C. -S. Lue, Janna Machts, Kenji M. Kojima, Alannah M. Hallas, C. -L. Huang

Abstract: We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrah… ▽ More We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrahigh quality of the single crystal studied. The resistivity measurements under high pressure reveal that the Tsc is suppressed linearly with pressure and reaches absolute zero around 20 GPa. Specific heat and muon spin relaxation measurements both indicate that the two-gap s-wave model best describes the superconductivity of V2Ga5. The spectra obtained from angle-resolved photoemission spectroscopy measurements suggest that two superconducting gaps open at the Fermi surface around the Z and Γ points. These results are verified by first-principles band structure calculations. We therefore conclude that V2Ga5 is a phonon-mediated two-gap s-wave superconductor △ Less

Submitted 6 May, 2024; originally announced May 2024.

Comments: Some images experience distortion during the conversion process to EPS format

Unveiling dynamic bifurcation of Resch-patterned origami for self-adaptive impact mitigation structure

Authors: Yasuhiro Miyazawa, Chia-Yung Chang, Qixun Li, Ryan Tenu Ahn, Koshiro Yamaguchi, Seonghyun Kim, Minho Cha, Junseo Kim, Yuyang Song, Shinnosuke Shimokawa, Umesh Gandhi, **kyu Yang

Abstract: In the classic realm of impact mitigation, targeting different impact scenarios with a universally designed device still remains an unassailable challenge. In this study, we delve into the untapped potential of Resch-patterned origami for impact mitigation, specifically considering the adaptively reconfigurable nature of the Resch origami structure. Our unit-cell-level analyses reveal two distinct… ▽ More In the classic realm of impact mitigation, targeting different impact scenarios with a universally designed device still remains an unassailable challenge. In this study, we delve into the untapped potential of Resch-patterned origami for impact mitigation, specifically considering the adaptively reconfigurable nature of the Resch origami structure. Our unit-cell-level analyses reveal two distinctive modes of deformation, each characterized by contrasting mechanical responses: the folding mode that displays monostability coupled with strain-hardening, and the unfolding mode that manifests bistability, facilitating energy absorption through snap-through dynamics. Drop tests further unveil a novel dynamic bifurcation phenomenon, where the origami switches between folding and unfolding depending on impact speed, thereby showcasing its innate self-reconfigurability in a wide range of dynamic events. The tessellated meter-scale Resch structure mimicking an automotive bumper inherits this dynamically bifurcating behavior, demonstrating the instantaneous morphing into favorable deformation mode to minimize the peak acceleration upon impact. This suggests a self-adaptive and universally applicable impact-absorbing nature of the Resch-patterned origami system. We believe that our findings pave the way for develo** smart, origami-inspired impact mitigation devices capable of real-time response and adaptation to external stimuli, offering insights into designing universally protective structures with enhanced performance in response to various impact scenarios. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Quantifying the U $5f$ covalence and degree of localization in U intermetallics

Authors: Andrea Marino, Denise S. Christovam, Daisuke Takegami, Johannes Falke, Miguel M. F. Carvalho, Takaki Okauchi, Chung-Fu Chang, Simone G. Altendorf, Andrea Amorese, Martin Sundermann, Andrei Gloskovskii, Hlynur Gretarsson, Bernhard Keimer, Alexandr V. Andreev, Ladislav Havela, Andreas Leithe-Jasper, Andrea Severing, Jan Kunes, Liu Hao Tjeng, Atsushi Hariki

Abstract: A procedure for quantifying the U $5f$ electrons' covalence and degree of localization in U intermetallic compounds is presented. To this end, bulk sensitive hard and soft x-ray photoelectron spectroscopy were utilized in combination with density-functional theory (DFT) plus dynamical mean-field theory (DMFT) calculations. The energy dependence of the photoionization cross-sections allows the dise… ▽ More A procedure for quantifying the U $5f$ electrons' covalence and degree of localization in U intermetallic compounds is presented. To this end, bulk sensitive hard and soft x-ray photoelectron spectroscopy were utilized in combination with density-functional theory (DFT) plus dynamical mean-field theory (DMFT) calculations. The energy dependence of the photoionization cross-sections allows the disentanglement of the U\,$5f$ contribution to the valence band from the various other atomic subshells so that the computational parameters in the DFT\,+\,DMFT can be reliably determined. Applying this method to UGa$_2$ and UB$_2$ as model compounds from opposite ends of the (de)localization range, we have achieved excellent simulations of the valence band and core-level spectra. The width in the distribution of atomic U\,$5f$ configurations contributing to the ground state, as obtained from the calculations, quantifies the correlated nature and degree of localization of the U\,5$f$. The findings permit answering the longstanding question why different spectroscopic techniques give seemingly different numbers for the U 5$f$ valence in intermetallic U compounds. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: 14 pages, 9 figures

On-demand higher-harmonic generation through nonlinear Hall effects in curved nanomembranes

Authors: Botsz Huang, You-Ting Huang, Jan-Chi Yang, Tse-Ming Chen, Ali G. Moghaddam, Ching-Hao Chang

Abstract: The high-order Hall effects, which go beyond the ordinary, unlock more possibilities of electronic transport properties and functionalities. Pioneer works focus on the manufacture of complex nanostructures with low lattice symmetry to produce them. In this paper, we theoretically show that such high-order Hall effects can alternatively be generated by curving a conducting nanomembrane which is hig… ▽ More The high-order Hall effects, which go beyond the ordinary, unlock more possibilities of electronic transport properties and functionalities. Pioneer works focus on the manufacture of complex nanostructures with low lattice symmetry to produce them. In this paper, we theoretically show that such high-order Hall effects can alternatively be generated by curving a conducting nanomembrane which is highly tunable and also enables anisotropy. Its Hall response can be tuned from first to fourth order by simply varying the direction and magnitude of the applied magnetic field. The dominant Hall current frequency can also be altered from zero to double, or even four times that of the applied alternating electric field. This phenomenon is critically dependent on the occurrence of high-order snake orbits associated with the effective magnetic-field dipoles and quadruples induced by the curved geometry. Our results offer pathways for spatially engineering magnetotransport, current rectification, and frequency multiplication in the bent conducting nanomembrane. △ Less

Submitted 4 April, 2024; originally announced April 2024.

Comments: 7+3 pages,5+2 figures

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Authors: Bo Chen, Xiaoda Liu, Yu-Hang Li, Han Tay, Takashi Taniguchi, Kenji Watanabe, Moses. H. W. Chan, Jiaqiang Yan, Fengqi Song, Ran Cheng, Cui-Zu Chang

Abstract: Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a… ▽ More Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields and a square hysteresis loop near zero magnetic field in all these devices. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Our theoretical calculations interpret this even-odd layer-dependent exchange bias effect as a consequence of contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices. △ Less

Submitted 3 April, 2024; originally announced April 2024.

Comments: 23 pages, 4 figures, comments are very much welcome

Observation of Kosterlitz-Thouless Metal-to-Insulator Transition in Quantum Anomalous Hall Insulators

Authors: Ruoxi Zhang, Yi-Fan Zhao, Ling-Jie Zhou, Deyi Zhuo, Zi-Jie Yan, Chao-Xing Liu, Moses H. W. Chan, Chui-Zhen Chen, Cui-Zu Chang

Abstract: Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in sha** the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observ… ▽ More Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in sha** the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observed in this sandwich heterostructure originates from the combined contribution of the top and bottom surface states. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle undoped TI layer. The well-quantized QAH effect is observed in all these samples and its critical behavior is modulated by the IEC between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), we find that thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance, whereas thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. The IEC-induced critical-metal-to-insulator transition in the QAH PPT regime can be understood through a two-channel Chalker-Coddington network model by tuning inter-channel tunneling. The agreement between experiment and theory strongly supports the QAH PPT within the Kosterlitz-Thouless framework, where the critical metal and disordered insulator phases exist in bound and unbound states of vortex-antivortex pairs, respectively. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 19 pages, 4 figures, comments are very much welcome

Diamond Micro-Chip for Quantum Microscopy

Authors: Shahidul Asif, Hang Chen, Johannes Cremer, Shantam Ravan, Jeyson Tamara-Isaza, Saurabh Lamsal, Reza Ebadi, Yan Li, Ling-Jie Zhou, Cui-Zu Chang, John Q. Xiao, Amir Yacoby, Ronald L. Walsworth, Mark J. H. Ku

Abstract: The nitrogen vacancy (NV) center in diamond is an increasingly popular quantum sensor for microscopy of electrical current, magnetization, and spins. However, efficient NV-sample integration with a robust, high-quality interface remains an outstanding challenge to realize scalable, high-throughput microscopy. In this work, we characterize a diamond micro-chip (DMC) containing a (111)-oriented NV e… ▽ More The nitrogen vacancy (NV) center in diamond is an increasingly popular quantum sensor for microscopy of electrical current, magnetization, and spins. However, efficient NV-sample integration with a robust, high-quality interface remains an outstanding challenge to realize scalable, high-throughput microscopy. In this work, we characterize a diamond micro-chip (DMC) containing a (111)-oriented NV ensemble; and demonstrate its utility for high-resolution quantum microscopy. We perform strain imaging of the DMC and find minimal detrimental strain variation across a field-of-view of tens of micrometer. We find good ensemble NV spin coherence and optical properties in the DMC, suitable for sensitive magnetometry. We then use the DMC to demonstrate wide-field microscopy of electrical current, and show that diffraction-limited quantum microscopy can be achieved. We also demonstrate the deterministic transfer of DMCs with multiple materials of interest for next-generation electronics and spintronics. Lastly, we develop a polymer-based technique for DMC placement. This work establishes the DMC's potential to expand the application of NV quantum microscopy in materials, device, geological, biomedical, and chemical sciences. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Comments: Includes supplementary materials section

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-do**

Authors: Chao Zhou, Liyang Ma, Yanpeng Feng, Chang-Yang Kuo, Yu-Chieh Ku, Cheng-En Liu, Xianlong Cheng, **gxuan Li, Yangyang Si, Haoliang Huang, Yan Huang, Hongjian Zhao, Chun-Fu Chang, Sujit Das, Shi Liu, Zuhuang Chen

Abstract: In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also… ▽ More In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-do** to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-do** ensure the enhanced ferroelectricity and shortened switching time. The co-do** strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Direct Visualization of Disorder Driven Electronic Liquid Crystal Phases in Dirac Nodal Line Semimetal GdSbTe

Authors: Balaji Venkatesan, Syu-You Guan, Jen-Te Chang, Shiang-Bin Chiu, Po-Yuan Yang, Chih-Chuan Su, Tay-Rong Chang, Kalaivanan Raju, Raman Sankar, Somboon Fongchaiya, Ming-Wen Chu, Chia-Seng Chang, Guoqing Chang, Hsin Lin, Adrian Del Maestro, Ying-Jer Kao, Tien-Ming Chuang

Abstract: Electronic liquid crystal (ELC) phases are spontaneous symmetry breaking states believed to arise from strong electron correlation in quantum materials such as cuprates and iron pnictides. Here, we report a direct observation of ELC phases in a Dirac nodal line (DNL) semimetal GdSbxTe2-x. Electronic nanostructures consisting of incommensurate smectic charge modulation and intense local nematic ord… ▽ More Electronic liquid crystal (ELC) phases are spontaneous symmetry breaking states believed to arise from strong electron correlation in quantum materials such as cuprates and iron pnictides. Here, we report a direct observation of ELC phases in a Dirac nodal line (DNL) semimetal GdSbxTe2-x. Electronic nanostructures consisting of incommensurate smectic charge modulation and intense local nematic order are visualized by using spectroscopic imaging - scanning tunneling microscopy. As topological materials with symmetry protected Dirac or Weyl fermions are mostly weakly correlated, the discovery of such ELC phases are anomalous and raise questions on the origin of their emergence. Specifically, we demonstrate how chemical substitution generates these symmetry breaking phases before the system undergoes a charge density wave - orthorhombic structural transition. We further show how dopants can induce nematicity via quasiparticle scattering interference. Our results highlight the importance of impurities in realizing ELC phases and present a new material platform for exploring the interplay among quenched disorder, topology and electron correlation. △ Less

Submitted 7 May, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Sustained Robust Exciton Emission in Suspended Monolayer WSe_2 within the Low Carrier Density Regime for Quantum Emitter Applications

Authors: Zheng-Zhe Chen, Chiao-Yun Chang, Ya-Ting Tsai, Po-Cheng Tsai, Shih-Yen Lin, Min-Hsiung Shih

Abstract: The development of semiconductor optoelectronic devices is moving toward low power consumption and miniaturization, especially for high-efficiency quantum emitters. However, most of these quantum sources work at low carrier density region, where the Shockley-Read-Hall recombination may dominant and seriously reduce the emission efficiency. In order to diminish the affection of carrier trap** and… ▽ More The development of semiconductor optoelectronic devices is moving toward low power consumption and miniaturization, especially for high-efficiency quantum emitters. However, most of these quantum sources work at low carrier density region, where the Shockley-Read-Hall recombination may dominant and seriously reduce the emission efficiency. In order to diminish the affection of carrier trap** and sustain a strong photoluminescence emission under low power pum** condition, we investigated on the influence of Suspending to monolayered tungsten diselenide, novel two-dimensional quantum material. Not only the PL intensity, but also the fundamental photoluminescence quantum yield has exhibited a huge, order-scale enhancement through suspending, even surprisingly, we found the PLQY improvement revealed far significantly under small pum** power and came out an exponential increase tendency toward even lower carrier density region. With its strong excitonic effect, suspended WSe_2 offers a solution to reduce carrier trap** and participate in non-radiative processes. Moreover, in the low-power range where SRH recombination dominates, suspended WSe_2 exhibited remarkably higher percentage of excitonic radiation compared to contacted WSe_2. Herein, we quantitatively demonstrate the significance of suspended WSe_2 monolayer at low carrier density region, highlighting its potential for develo** compact, low-power quantum emitters in the future. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

Authors: Wei Yuan, Zi-Jie Yan, Hemian Yi, Zihao Wang, Stephen Paolini, Yi-Fan Zhao, Ling-Jie Zhou, Annie G. Wang, Ke Wang, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Laurel E. Winter, John Singleton, Moses H. W. Chan, Cui-Zu Chang

Abstract: The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe.… ▽ More The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the interaction between superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures. △ Less

Submitted 14 February, 2024; originally announced February 2024.

Comments: 24 pages, 4 figures, comments are welcome

Curvature effect induce topological phase transitions in two dimensional topological superconductor

Authors: Huan-Wen Lai, Meng-Chien Wang, Ching-Ray Chang, Seng-Ghee Tan

Abstract: Recently, topological superconductor is one of the important topics in condensed matter physics due to the exotic features of quasiparticles resided on the edge, surface and vortex core. In our work, we analyze the two dimensional s+p wave noncentrosymmetric superconductor(NCS) with Rashba spin-orbit coupling in 2D cylindrical coordinate to find the relationship between the topological phase trans… ▽ More Recently, topological superconductor is one of the important topics in condensed matter physics due to the exotic features of quasiparticles resided on the edge, surface and vortex core. In our work, we analyze the two dimensional s+p wave noncentrosymmetric superconductor(NCS) with Rashba spin-orbit coupling in 2D cylindrical coordinate to find the relationship between the topological phase transition and the curvature. With analytical calculation and numerical analyze, we confirm that the topological phase transition in s+p wave NCS in 2D cylindrical coordinate is related to the curvature from band theory perspective. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Comments: 9 pages, 2 figures

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

Authors: Deyi Zhuo, Ling-Jie Zhou, Yi-Fan Zhao, Ruoxi Zhang, Zi-Jie Yan, Annie G. Wang, Moses H. W. Chan, Chao-Xing Liu, Chui-Zhen Chen, Cui-Zu Chang

Abstract: The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow… ▽ More The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with ΔC=1 and ΔC=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC=1 and ΔC=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices. △ Less

Submitted 14 January, 2024; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: 18 pages, 4 figures. Comments are welcome

Flux coupled tunable superconducting resonator

Authors: Juliang Li, Pete Barry, Tom Cecil, Marharyta Lisovenko, Volodymyr Yefremenko, Gensheng Wang, Serhii Kruhlov, Goran Karapetrov, Clarence Chang

Abstract: We present a design and implementation of frequency-tunable superconducting resonator. The resonance frequency tunability is achieved by flux-coupling a superconducting LC-loop to a current-biased feedline; the resulting screening current leads to a change of the kinetic inductance and shift in the resonance frequency. The thin film aluminum resonator consists of an interdigitated capacitor and th… ▽ More We present a design and implementation of frequency-tunable superconducting resonator. The resonance frequency tunability is achieved by flux-coupling a superconducting LC-loop to a current-biased feedline; the resulting screening current leads to a change of the kinetic inductance and shift in the resonance frequency. The thin film aluminum resonator consists of an interdigitated capacitor and thin line inductors forming a closed superconducting loop. The magnetic flux from the nearby current feedline induces Meissner shielding currents in the resonator loop leading to change in the kinetic part of the total inductance of the resonator. We demonstarte continuous frequency tuning within 160 MHz around the resonant frequency of 2.7 GHz. We show that: (1) frequency upconversion is achieved when kHz AC modulation signal is superimposed onto the DC bias resulting in sidebands to the resonator tone; (2) three-wave mixing is attained by parametrically pum** the nonlinear kinetic inductance using a strong RF pump signal in the feedline. The simple architecture is amenable to large array multiplexing and on-chip integration with other circuit components. The concept could be applied in flux magnetometers, upconverters, and parametric amplifiers operating above 4 Kelvin cryogenic temperatures when alternative high critical temperature material with high kinetic inductance is used. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Yi-Fan Zhao, Ying-Ting Chan, Jiaqi Cai, Ruobing Mei, Xianxin Wu, Zi-Jie Yan, Ling-Jie Zhou, Ruoxi Zhang, Zihao Wang, Stephen Paolini, Run Xiao, Ke Wang, Anthony R. Richardella, John Singleton, Laurel E. Winter, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Moses H. W. Chan, Nitin Samarth, Xiaodong Xu, Weida Wu , et al. (2 additional authors not shown)

Abstract: When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferr… ▽ More When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 14 pages, 4 figures. Accepted by Science. Comments are welcome

Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness

Authors: Yi-Fan Zhao, Ruoxi Zhang, Zi-Ting Sun, Ling-Jie Zhou, Deyi Zhuo, Zi-Jie Yan, Hemian Yi, Ke Wang, Moses H. W. Chan, Chao-Xing Liu, K. T. Law, Cui-Zu Chang

Abstract: Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less… ▽ More Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10nm. The thick QAH insulators in the three-dimensional(3D) regime are limited, largely due to inevitable bulk carriers being introduced in thick magnetic TI samples. Here, we employ molecular beam epitaxy (MBE) to synthesize magnetic TI trilayers with a thickness of up to ~106 nm. We find these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying magnetic dopants, gate voltages, temperature, and external magnetic fields, we examine the properties of these thick QAH insulators and demonstrate the robustness of the 3D QAH effect. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of our thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law. △ Less

Submitted 7 December, 2023; v1 submitted 3 December, 2023; originally announced December 2023.

Comments: 24 pages, 5 figures. Comments are welcome

Design and performance of an ultrahigh vacuum spectroscopic-imaging scanning tunneling microscope with a hybrid vibration isolation system

Authors: Pei-Fang Chung, Balaji Venkatesan, Chih-Chuan Su, Jen-Te Chang, Hsu-Kai Cheng, Che-An Liu, Henry Yu, Chia-Seng Chang, Syu-You Guan, Tien-Ming Chuang

Abstract: A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance, low vibration facility is required. Here, we describe the design and the performance of an ultrahigh vacuum STM system supported by a hybrid vibration isolation s… ▽ More A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance, low vibration facility is required. Here, we describe the design and the performance of an ultrahigh vacuum STM system supported by a hybrid vibration isolation system that consists of a pneumatic passive and a piezoelectric active vibration isolation stages. The STM system is equipped with a 1K pot cryogenic insert and a 9 Tesla superconducting magnet, capable of continuous SI-STM measurements for 7 days. A field ion microscopy system is installed for in situ STM tip treatment. We present the detailed vibrational noise analysis of the hybrid vibration isolation system and demonstrate the performance of our STM system by taking high resolution spectroscopic maps and topographic images on several quantum materials. Our results establish a new strategy to achieve an effective vibration isolation system for high-resolution STM and other scanning probe microscopy to investigate the nanoscale quantum phenomena. △ Less

Submitted 27 November, 2023; v1 submitted 17 November, 2023; originally announced November 2023.

Linear dichroic x-ray absorption response of Ti-Ti dimers along the $c$ axis in Ti$_2$O$_3$ upon Mg substitution

Authors: M. Okawa, D. Takegami, D. S. Christovam, M. Ferreira-Carvalho, C. -Y. Kuo, C. T. Chen, T. Miyoshino, K. Takasu, T. Okuda, C. F. Chang, L. H. Tjeng, T. Mizokawa

Abstract: Corundum oxide Ti$_2$O$_3$ shows the metal-insulator transition around 400-600 K accompanying the nearest Ti$^{3+}$-Ti$^{3+}$ bond ($a_{1g}a_{1g}$ singlet state) formation along the $c$ axis. In order to clarify the hole-do** effect for the $a_{1g}a_{1g}$ singlet bond in Ti$_2$O$_3$, we investigated Ti $3d$ orbital anisotropy between corundum-type Ti$_2$O$_3$ and ilmenite-type MgTiO$_3$ using li… ▽ More Corundum oxide Ti$_2$O$_3$ shows the metal-insulator transition around 400-600 K accompanying the nearest Ti$^{3+}$-Ti$^{3+}$ bond ($a_{1g}a_{1g}$ singlet state) formation along the $c$ axis. In order to clarify the hole-do** effect for the $a_{1g}a_{1g}$ singlet bond in Ti$_2$O$_3$, we investigated Ti $3d$ orbital anisotropy between corundum-type Ti$_2$O$_3$ and ilmenite-type MgTiO$_3$ using linear dichroism of soft x-ray absorption spectroscopy of the Ti $L_{2,3}$ edge. From the linear dichroic spectral weight in Mg$_y$Ti$_{2-y}$O$_3$, we confirmed that the $a_{1g}a_{1g}$ state is dominant not only in $y=0.01$ (almost Ti$_2$O$_3$), but also in $y = 0.29$, indicating that the Ti-Ti bond survives against a certain level of hole do**. In $y=0.63$ corresponding to 46% hole do** per Ti, the $3d$ orbital symmetry changes from $a_{1g}$ to $e_g^π$. △ Less

Submitted 8 November, 2023; originally announced November 2023.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 108, 195108 (2023)

Dirac-Fermion-Assisted Interfacial Superconductivity in Epitaxial Topological Insulator/Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Lun-Hui Hu, Yi-Fan Zhao, Ling-Jie Zhou, Zi-Jie Yan, Ruoxi Zhang, Wei Yuan, Zihao Wang, Ke Wang, Danielle Reifsnyder Hickey, Anthony R. Richardella, John Singleton, Laurel E. Winter, Xianxin Wu, Moses H. W. Chan, Nitin Samarth, Chao-Xing Liu, Cui-Zu Chang

Abstract: Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate mater… ▽ More Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate material platforms to this end. Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host emergent interfacial superconductivity when a non-superconducting antiferromagnet (FeTe) is interfaced with a topological insulator (TI) (Bi, Sb)2Te3 wherein the chemical potential can be tuned through varying the Bi/Sb ratio. By performing in-vacuo angle-resolved photoemission spectroscopy (ARPES) and ex-situ electrical transport measurements, we find that the superconducting transition temperature and the upper critical magnetic field are suppressed when the chemical potential approaches the Dirac point. This observation implies a direct correlation between the interfacial superconductivity and Dirac electrons of the TI layer. We provide evidence to show that the observed interfacial superconductivity and its chemical potential dependence is the result of the competition between the Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling mediated by Dirac surface states and antiferromagnetic exchange couplings that generate the bicollinear antiferromagnetic order in the FeTe layer. The Dirac-fermion-assisted interfacial superconductivity in (Bi,Sb)2Te3/FeTe heterostructures provides a new approach to probe TSC and Majorana physics in hybrid devices and potentially constitutes an alternative platform for topological quantum computation. △ Less

Submitted 13 October, 2023; originally announced October 2023.

Comments: 32 pages and 4 figures. Accepted by Nature Communications

Journal ref: Nature Commun. 14,7119 (2023)

Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films

Authors: Seokje Lee, Muhammad S. Abbas, Dongha Yoo, Keundong Lee, Tobiloba G. Fabunmi, Eunsu Lee, Han Ik Kim, Imhwan Kim, Daniel Jang, Sangmin Lee, Jusang Lee, Ki-Tae Park, Changgu Lee, Miyoung Kim, Yun Seog Lee, Celesta S. Chang, Gyu-Chul Yi

Abstract: We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal… ▽ More We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices. △ Less

Submitted 5 December, 2023; v1 submitted 8 October, 2023; originally announced October 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright 2023 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03333

Hidden non-collinear spin-order induced topological surface states

Authors: Zengle Huang, Hemian Yi, Daniel Kaplan, Lu** Min, Hengxin Tan, Ying-ting Chan, Zhiqiang Mao, Binghai Yan, Cui-Zu Chang, Weida Wu

Abstract: Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report the observation of non-c… ▽ More Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report the observation of non-collinear antiferromagnetic order with multiple modulations using spin-polarized scanning tunneling microscopy. Moreover, we discover a hidden spin-rotation transition of single-to-multiple modulations 2 K below the Neel temperature. The hidden transition coincides with the onset of the surface states splitting observed by our angle-resolved photoemission spectroscopy measurements. Single modulation gives rise to a band inversion with induced topological surface states in a local momentum region while the full Brillouin zone carries trivial topological indices, and multiple modulation further splits the surface bands via non-collinear spin tilting, as revealed by our calculations. The direct evidence of the non-collinear spin order in NdSb not only clarifies the mechanism of the emergent topological surface states, but also opens up a new paradigm of control and manipulation of band topology with magnetism. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Comments: 32 pages, 4 figures, 10 extended figures

Quantum Simulation of the Bosonic Kitaev Chain

Authors: J. H. Busnaina, Z. Shi, A. McDonald, D. Dubyna, I. Nsanzineza, Jimmy S. C. Hung, C. W. Sandbo Chang, A. A. Clerk, C. M. Wilson

Abstract: Superconducting quantum circuits are a natural platform for quantum simulations of a wide variety of important lattice models describing topological phenomena, spanning condensed matter and high-energy physics. One such model is the bosonic analogue of the well-known fermionic Kitaev chain, a 1D tight-binding model with both nearest-neighbor hop** and pairing terms. Despite being fully Hermitian… ▽ More Superconducting quantum circuits are a natural platform for quantum simulations of a wide variety of important lattice models describing topological phenomena, spanning condensed matter and high-energy physics. One such model is the bosonic analogue of the well-known fermionic Kitaev chain, a 1D tight-binding model with both nearest-neighbor hop** and pairing terms. Despite being fully Hermitian, the bosonic Kitaev chain exhibits a number of striking features associated with non-Hermitian systems, including chiral transport and a dramatic sensitivity to boundary conditions known as the non-Hermitian skin effect. Here, using a multimode superconducting parametric cavity, we implement the bosonic Kitaev chain in synthetic dimensions. The lattice sites are mapped to frequency modes of the cavity, and the $\textit{in situ}$ tunable complex hop** and pairing terms are created by parametric pum** at the mode-difference and mode-sum frequencies, respectively. We experimentally demonstrate important precursors of nontrivial topology and the non-Hermitian skin effect in the bosonic Kitaev chain, including chiral transport, quadrature wavefunction localization, and sensitivity to boundary conditions. Our experiment is an important first step towards exploring genuine many-body non-Hermitian quantum dynamics. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Journal ref: Nature Communications 15, 3065 (2024)

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Authors: Hyunsue Kim, Mengke Liu, Lisa Frammolino, Yanxing Li, Fan Zhang, Woojoo Lee, Chengye Dong, Yi-Fan Zhao, Guan-Yu Chen, Pin-Jui Hsu, Cui-Zu Chang, Joshua Robinson, Jiaqiang Yan, Xiaoqin Li, Allan H. MacDonald, Chih-Kang Shih

Abstract: Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth… ▽ More Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials. △ Less

Submitted 11 September, 2023; originally announced September 2023.

Comments: 20 pages, 4 figures

Fe substitution in URu$_2$Si$_2$: singlet magnetism in an extended Doniach phase diagram

Authors: Andrea Marino, Denise S. Christovam, Chun-Fu Chang, Johannes Falke, Chang-Yang Kuo, Chi-Nan Wu, Martin Sundermann, Andrea Amorese, Hlynur Gretarsson, Eric Lee Wong, Camilla M. Moir, Yuang Deng, M. Brian Maple, Peter Thalmeier, Liu Hao Tjeng, Andrea Severing

Abstract: The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ from $x$\,=\,0.0 to 2.0 by U\,4$f$ core-level photoelectron spectroscopy and have observed non-monotonic changes in the s… ▽ More The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ from $x$\,=\,0.0 to 2.0 by U\,4$f$ core-level photoelectron spectroscopy and have observed non-monotonic changes in the spectra. The initial increase and subsequent decrease of the spectral weight of the 4$f$ core level satellite with increasing $x$ stands for a non-monotonic 5$f$ filling across the substitution series. The competition of chemical pressure and increase of the density of states at the Fermi energy, both due to substitution of Ru with Fe, can explain such a behavior. An extended Doniach phase diagram including the $x$ dependence of the density of states is proposed. Also in URu$_{2-x}$Fe$_x$Si$_2$ the ground state is a singlet or quasi-doublet state consisting of two singlets. Hence, the formation of magnetic order in the URu$_{2-x}$Fe$_x$Si$_2$ substitution series must be explained within a singlet magnetism model. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 108, 085128 (2023)

Observation of Fractionally Quantized Anomalous Hall Effect

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Yinong Zhang, Jiayi Zhu, Xiaoyu Liu, Chong Wang, William Holtzmann, Chaowei Hu, Zhaoyu Liu, Takashi Taniguchi, Kenji Watanabe, Jiun-haw Chu, Ting Cao, Liang Fu, Wang Yao, Cui-Zu Chang, David Cobden, Di Xiao, Xiaodong Xu

Abstract: The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma… ▽ More The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 15 pages, 4 figures for main text. 8 extended data figures

Journal ref: Nature (2023)

Singlet magnetism in intermetallic UGa$_2$ unveiled by inelastic x-ray scattering

Authors: Andrea Marino, Martin Sundermann, Denise S. Christovam, Andrea Amorese, Chun-Fu Chang, Paulius Dolmantas, Ayman H. Said, Hlynur Grrtarsson, Bernhard Keimer, Maurits W. Haverkort, Alexander V. Andreev, Ladilav Havela, Peter Thalmeier, Liu Hao Tjeng, Andrea Severing

Abstract: Using high resolution tender-x-ray resonant inelastic scattering and hard-x-ray non-resonant inelastic scattering beyond the dipole limit we were able to detect electronic excitations in intermetallic UGa$_2$ that are highly atomic in nature. Analysis of the spectral lineshape reveals that the local $5f^2$ configuration characterizes the correlated nature of this ferromagnet. The orientation and d… ▽ More Using high resolution tender-x-ray resonant inelastic scattering and hard-x-ray non-resonant inelastic scattering beyond the dipole limit we were able to detect electronic excitations in intermetallic UGa$_2$ that are highly atomic in nature. Analysis of the spectral lineshape reveals that the local $5f^2$ configuration characterizes the correlated nature of this ferromagnet. The orientation and directional dependence of the spectra indicate that the ground state is made of the $Γ_1$ singlet and/or $Γ_6$ doublet symmetry. With the ordered moment in the $ab$ plane, we infer that the magnetism originates from the higher lying $Γ_6$ doublet being mixed with the $Γ_1$ singlet due to inter-site exchange, qualifying UGa$_2$ to be a true quantum magnet. The ability to observe atomic excitations is crucial to resolve the on-going debate about the degree of localization versus itineracy in U intermetallics. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 108, 045142 (2023)

Light-Driven Nanoscale Vectorial Currents

Authors: Jacob Pettine, Prashant Padmanabhan, Teng Shi, Lauren Gingras, Luke McClintock, Chun-Chieh Chang, Kevin W. C. Kwock, Long Yuan, Yue Huang, John Nogan, Jon K. Baldwin, Peter Adel, Ronald Holzwarth, Abul K. Azad, Filip Ronning, Antoinette J. Taylor, Rohit P. Prasankumar, Shi-Zeng Lin, Hou-Tong Chen

Abstract: Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics, and as a means of revealing or even inducing broken symmetries. Emerging methods for light-based current control offer promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. How… ▽ More Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics, and as a means of revealing or even inducing broken symmetries. Emerging methods for light-based current control offer promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. However, optical generation and manipulation of currents at nanometer spatial scales remains a basic challenge and a crucial step towards scalable optoelectronic systems for microelectronics and information science. Here, we introduce vectorial optoelectronic metasurfaces in which ultrafast light pulses induce local directional charge flows around symmetry-broken plasmonic nanostructures, with tunable responses and arbitrary patterning down to sub-diffractive nanometer scales. Local symmetries and vectorial current distributions are revealed by polarization- and wavelength-sensitive electrical readout and terahertz (THz) emission, while spatially-tailored global currents are demonstrated in the direct generation of elusive broadband THz vector beams. We show that in graphene, a detailed interplay between electrodynamic, thermodynamic, and hydrodynamic degrees of freedom gives rise to rapidly-evolving nanoscale driving forces and charge flows under extreme temporal and spatial confinement. These results set the stage for versatile patterning and optical control over nanoscale currents in materials diagnostics, THz spectroscopies, nano-magnetism, and ultrafast information processing. △ Less

Submitted 21 October, 2023; v1 submitted 21 July, 2023; originally announced July 2023.

Journal ref: Nature 626, 984-989 (2024)

Hamiltonian Phase Error in Resonantly Driven CNOT Gate Above the Fault-Tolerant Threshold

Authors: Yi-Hsien Wu, Leon C. Camenzind, Akito Noiri, Kenta Takeda, Takashi Nakajima, Takashi Kobayashi, Chien-Yuan Chang, Amir Sammak, Giordano Scappucci, Hsi-Sheng Goan, Seigo Tarucha

Abstract: Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fledged quantum computer will need quantum error correction, which requires high-fidelity quantum gates. Analyzing and mitigating the gate errors are useful to improve the gate fidelity. Here, we demonstrate a simple yet rel… ▽ More Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fledged quantum computer will need quantum error correction, which requires high-fidelity quantum gates. Analyzing and mitigating the gate errors are useful to improve the gate fidelity. Here, we demonstrate a simple yet reliable calibration procedure for a high-fidelity controlled-rotation gate in an exchange-always-on Silicon quantum processor allowing operation above the fault-tolerance threshold of quantum error correction. We find that the fidelity of our uncalibrated controlled-rotation gate is limited by coherent errors in the form of controlled-phases and present a method to measure and correct these phase errors. We then verify the improvement in our gate fidelities by randomized benchmark and gate-set tomography protocols. Finally, we use our phase correction protocol to implement a virtual, high-fidelity controlled-phase gate. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: Main article: 22 pages, 4 figures; Supplementary material: 6 pages, 5 figures, 1 table

Disordered $\mathcal{N} = (2, 2)$ Supersymmetric Field Theories

Authors: Chi-Ming Chang, Xiaoyang Shen

Abstract: We investigate a large class of $\mathcal{N} = (2, 2)$ supersymmetric field theories in two dimensions, which contains the Murugan-Stanford-Witten model, and can be naturally regarded as a disordered generalization of the two-dimensional Landau-Ginzburg models. We analyze the two and four-point functions of chiral superfields, and extract from them the central charge, the operator spectrum, and th… ▽ More We investigate a large class of $\mathcal{N} = (2, 2)$ supersymmetric field theories in two dimensions, which contains the Murugan-Stanford-Witten model, and can be naturally regarded as a disordered generalization of the two-dimensional Landau-Ginzburg models. We analyze the two and four-point functions of chiral superfields, and extract from them the central charge, the operator spectrum, and the chaos exponent in these models. Some of the models exhibit a conformal manifold parameterized by the variances of the random couplings. We compute the Zamolodchikov metrics on the conformal manifold, and demonstrate that the chaos exponent varies nontrivally along the conformal manifolds. Finally, we introduce and perform some preliminary analysis of a disordered generalization of the gauged linear sigma models, and discuss the low energy theories as ensemble averages of Calabi-Yau sigma models over complex structure moduli space. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Comments: 43 pages, 6 figures

Journal ref: SciPost Phys. 16, 140 (2024)

Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

Authors: Deyi Zhuo, Zi-Jie Yan, Zi-Ting Sun, Ling-Jie Zhou, Yi-Fan Zhao, Ruoxi Zhang, Ruobing Mei, Hemian Yi, Ke Wang, Moses H. W. Chan, Chao-Xing Liu, K. T. Law, Cui-Zu Chang

Abstract: An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number… ▽ More An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number layer. All these samples have a thickness of ~10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase. △ Less

Submitted 3 October, 2023; v1 submitted 22 June, 2023; originally announced June 2023.

Comments: 25 pages, 5 figures. Comments are very much welcome

Hidden Hydroxides in KOH-Grown BaNiO3 Crystals: A Potential Link to Their Catalytic Behavior

Authors: Lun **, Haozhe Wang, Xianghan Xu, Danrui Ni, Chen Yang, Yu-Chieh Ku, Cheng-En Liu, Chang-Yang Kuo, Chun-Fu Chang, Raimundas Sereika, Wenli Bi, Weiwei Xie, Robert. J. Cava

Abstract: The hexagonal perovskite BaNiO3, prepared via non-ceramic approaches, is known to act as a good catalyst for the oxygen-evolution reaction (OER) in alkaline media. Here we report our observation that BaNiO3 synthesized via KOH flux growth and high O2 pressure ceramic synthesis have different magnetic properties. We show that this is because the KOH flux-grown crystals made in open-air are actually… ▽ More The hexagonal perovskite BaNiO3, prepared via non-ceramic approaches, is known to act as a good catalyst for the oxygen-evolution reaction (OER) in alkaline media. Here we report our observation that BaNiO3 synthesized via KOH flux growth and high O2 pressure ceramic synthesis have different magnetic properties. We show that this is because the KOH flux-grown crystals made in open-air are actually a hydroxide-containing form of BaNiO3 that can be dried upon annealing in O2 flow. This work not only unveils a previously unknown aspect of the BaNiO3 OER catalyst and offers some insights into the underlying mechanism, but also suggests that hydroxide ions may be present in other hexagonal perovskite oxides prepared in wet conditions. △ Less

Submitted 27 October, 2023; v1 submitted 8 June, 2023; originally announced June 2023.

Comments: 20 pages, 5 figures

Journal ref: Chem. Mater. 2023, 35, 21, 9434-9443

Triplet State and Auger-Type Excitation Originating from Two-Electron Tunneling in Field Emission Resonance on Ag(100)

Authors: Shin-Ming Lu, Ho-Hsiang Chang, Wei-Bin Su, Wen-Yuan Chan, Kung-Hsuan Lin, Chia-Seng Chang

Abstract: In this study, we discovered that the energy gap above the vacuum level in the projected bulk band structure of Ag(100) prevents electrons in the first-order field emission resonance (FER) from inducing the surface plasmons. This mechanism allows light emission from FER to reveal characteristics of triplet states and Auger-type excitation resulting from two-electron tunneling in FER. According to… ▽ More In this study, we discovered that the energy gap above the vacuum level in the projected bulk band structure of Ag(100) prevents electrons in the first-order field emission resonance (FER) from inducing the surface plasmons. This mechanism allows light emission from FER to reveal characteristics of triplet states and Auger-type excitation resulting from two-electron tunneling in FER. According to optical spectra, surface plasmons can be induced by electrons in the zeroth-order FER. However, corresponding radiative decay can also trigger Auger-type excitation, whose energy state is influenced by the sharpness-dependent image potential acting on the scanning tunneling microscope tip. △ Less

Submitted 7 June, 2023; originally announced June 2023.

Comments: 19 pages, 8 figures

MSC Class: 81-02

Ultra-small topological spin textures with size of 1.3nm at above room temperature in Fe78Si9B13 amorphous alloy

Authors: Weiwei Wu, Hua** Zhang, Hong Wang, Chao Chang, Hongyu Jiang, **feng Li, Zhichao Lv, Laiquan Shen, Hanqiu Jiang, Chunyong He, Yubin Ke, Yuhua Su, Kosuke Hiroi, Zhendong Fu, Zi-An Li, Lin Gu, Maozhi Li, Dong Ma, Haiyang Bai

Abstract: Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of to… ▽ More Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of topological transport10,11 and the higher memory density or integration for topological quantum devices5-9. However, finding ultra-small topological spin textures at high temperatures is still a great challenge up to now. Here we find ultra-small topological spin textures in Fe78Si9B13 amorphous alloy. We measured a large topological Hall effect (THE) up to above room temperature, indicating the existence of highly densed and ultra-small topological spin textures in the samples. Further measurements by small-angle neutron scattering (SANS) reveal that the average size of ultra-small magnetic texture is around 1.3nm. Our Monte Carlo simulations show that such ultra-small spin texture is topologically equivalent to skyrmions, which originate from competing frustration and Dzyaloshinskii-Moriya interaction12,13 coming from amorphous structure14-17. Taking a single topological spin texture as one bit and ignoring the distance between them, we evaluated the ideal memory density of Fe78Si9B13, which reaches up to 4.44*104 gigabits (43.4 TB) per in2 and is 2 times of the value of GdRu2Si218 at 5K. More important, such high memory density can be obtained at above room temperature, which is 4 orders of magnitude larger than the value of other materials at the same temperature. These findings provide a unique candidate for magnetic memory devices with ultra-high density. △ Less

Submitted 29 May, 2023; originally announced May 2023.

Comments: 26 pages, 4 figures

Terminal Velocity Motion Model Used to Analyze the Mutual Phase-locking of STNOs

Authors: Hao-Hsuan Chen, Ching-Ming Lee, Ching-Ray Chang

Abstract: Using Legendre transformation, a standard theoretical approach extensively used in classical mechanics as well as thermal dynamics, two-dimensional non-linear auto-oscillators including spin torque nano-oscillators (STNOs) can be equivalently expressed either in phase space or in configuration space where all of them can be modeled by terminal velocity motion (TVM) particles. The transformation co… ▽ More Using Legendre transformation, a standard theoretical approach extensively used in classical mechanics as well as thermal dynamics, two-dimensional non-linear auto-oscillators including spin torque nano-oscillators (STNOs) can be equivalently expressed either in phase space or in configuration space where all of them can be modeled by terminal velocity motion (TVM) particles. The transformation completely preserves the dynamic information about the canonical momenta, leading to very precise analytical predictions about the phase-locking of a coupled pair of perpendicular to plane STNOs (PERP-STNOs) including dynamical phase diagrams, (un)phase-locked frequencies, phase-locked angles, and transient evolutions, which are all solved based on Newton mechanics. Notably, the TVM model successfully solves the difficulty of the generalized pendulum-like model [Chen \textit{et al}. \textbf{J. Appl. Phys. 130}, 043904 (2021)] failing to make precise predictions for the higher range of current in serial connection. Additionally, how to simply search for the critical currents for phase-locked (PL) and asynchronized (AS) states by numerically simulating the macrospin as well as TVM model, which gets inspired through analyzing the excitations of a forced pendulum, is also supplied here. Therefore, we believe that the TVM model can bring a more intuitive and precise way to explore all types of two-dimensional non-linear auto-oscillators. △ Less

Submitted 18 May, 2023; originally announced May 2023.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang, Yong** Cho, David Anthony Muller, Huili Grace Xing, Debdeep Jena, Oliver Brandt, Jonas Lähnemann

Abstract: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission… ▽ More Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the $Γ_{5}$ free exciton binding energy of 57 meV. △ Less

Submitted 23 July, 2023; v1 submitted 17 May, 2023; originally announced May 2023.

Journal ref: APL Materials 11, 081109 (2023)

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4

Authors: Ruobing Mei, Yi-Fan Zhao, Chong Wang, Yafei Ren, Di Xiao, Cui-Zu Chang, Chao-Xing Liu

Abstract: In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron do**. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measur… ▽ More In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron do**. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measurements for even-SLs MnBi2Te4 films are originated from two different anti-ferromagnetic (AFM) states with opposite magnetoelectric coefficients that give rise to different energies of zeroth Landau levels of the surface states in this model. The complex form of the anomalous Hall hysteresis loop in even-SLs MnBi2Te4 films can be understood from two magnetic transitions, a transition from one AFM state to the other AFM state followed by a second transition to the ferromagnetic state. Our model also provides a microscopic understanding of the electrical switching between two AFM states via the axion electrodynamics in even-SL MnBi2Te4 films. We further study orbital magnetization and magnetoelectric coefficient in MnBi2Te4 films, and find an even-odd oscillation behavior of the magnetoelectric coefficient. △ Less

Submitted 18 March, 2024; v1 submitted 10 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Lett. 132, 066604 (2024)

Finding Natural, Dense, and Stable Frustrated Lewis Pairs on Wurtzite Crystal Surfaces

Authors: Xi-Yang Yu, Zheng-Qing Huang, Tao Ban, Yun-Hua Xu, Zhong-Wen Liu, Chun-Ran Chang

Abstract: The surface frustrated Lewis pairs (SFLPs) open up new opportunities for substituting noble metals in the activation and conversion of stable molecules. However, the applications of SFLPs on a larger scale are impeded by the complex construction process, low surface density, and sensitivity to the reaction environment. Herein, wurtzite-structured crystals such as GaN, ZnO, and AlP are found for de… ▽ More The surface frustrated Lewis pairs (SFLPs) open up new opportunities for substituting noble metals in the activation and conversion of stable molecules. However, the applications of SFLPs on a larger scale are impeded by the complex construction process, low surface density, and sensitivity to the reaction environment. Herein, wurtzite-structured crystals such as GaN, ZnO, and AlP are found for develo** natural, dense, and stable SFLPs. It is revealed that the SFLPs can naturally exist on the (100) and (110) surfaces of wurtzite-structured crystals. All the surface cations and anions serve as the Lewis acid and Lewis base in SFLPs, respectively, contributing to the surface density of SFLPs as high as 7.26 x 1014 cm-2. Ab initio molecular dynamics simulations indicate that the SFLPs can keep stable under high temperatures and the reaction atmospheres of CO and H2O. Moreover, outstanding performance for activating the given small molecules is achieved on these natural SFLPs, which originates from the optimal orbital overlap between SFLPs and small molecules. Overall, these findings not only provide a simple method to obtain dense and stable SFLPs but also unfold the nature of SFLPs toward the facile activation of small molecules. △ Less

Submitted 5 February, 2024; v1 submitted 13 February, 2023; originally announced February 2023.

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films

Authors: Shanquan Chen, Jhong-Yi Chang, Qinghua Zhang, Qiuyue Li, Ting Lin, Fanqi Meng, Haoliang Huang, Shengwei Zeng, Xinmao Yin, My Ngoc Duong, Yalin Lu, Lang Chen, Er-Jia Guo, Hanghui Chen, Chun-Fu Chang, Chang-Yang Kuo, Zuhuang Chen

Abstract: The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induce… ▽ More The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Journal ref: Advanced Science, 2303630 (2023)

The Aharonov Casher phase of a bipartite entanglement pair traversing a quantum square ring

Authors: Che-Chun Huang, Seng Ghee Tan, Ching-Ray Chang

Abstract: We propose in this article a quantum square ring that conveniently generates, annihilates and distills the Aharonov Casher phase with the aid of entanglement. The non-Abelian phase is carried by a pair of spin-entangled particles traversing the square ring. At maximal entanglement, dynamic phases are eliminated from the ring and geometric phases are generated in discrete values. By contrast, at pa… ▽ More We propose in this article a quantum square ring that conveniently generates, annihilates and distills the Aharonov Casher phase with the aid of entanglement. The non-Abelian phase is carried by a pair of spin-entangled particles traversing the square ring. At maximal entanglement, dynamic phases are eliminated from the ring and geometric phases are generated in discrete values. By contrast, at partial to no entanglement, both geometric and dynamic phases take on discrete or locally continuous values depending only on the wavelength and the ring size. We have shown that entanglement in a non-Abelian system could greatly simplify future experimental efforts revolving around the studies of geometric phases. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 7 pages, 5 figures, 1 table

A Coarse-Grained Simulation Model for Self-Assembly of Liquid Droplets Featuring Explicit Mobile Binders

Authors: Gaurav Mitra, Chuan Chang, Angus McMullen, Daniela Puchall, Jasna Brujic, Glen M. Hocky

Abstract: Colloidal particles with mobile binding molecules constitute a powerful platform for probing the physics of self-assembly. Binding molecules are free to diffuse and rearrange on the surface, giving rise to spontaneous control over the number of droplet-droplet bonds, i.e., valence, as a function of the concentration of binders. This type of valence control has been realized experimentally by tunin… ▽ More Colloidal particles with mobile binding molecules constitute a powerful platform for probing the physics of self-assembly. Binding molecules are free to diffuse and rearrange on the surface, giving rise to spontaneous control over the number of droplet-droplet bonds, i.e., valence, as a function of the concentration of binders. This type of valence control has been realized experimentally by tuning the interaction strength between DNA-coated emulsion droplets. Optimizing for valence two yields droplet polymer chains, termed `colloidomers', which have recently been used to probe the physics of folding. To understand the underlying self-assembly mechanisms, here we present a coarse-grained molecular dynamics (CGMD) model to study the self-assembly of this class of systems using explicit representations of mobile binding sites. We explore how valence of assembled structures can be tuned through kinetic control in the strong binding limit. More specifically, we optimize experimental control parameters to obtain the highest yield of long linear colloidomer chains. Subsequently tuning the dynamics of binding and unbinding via a temperature-dependent model allows us to observe the heptamer chain collapse into all possible rigid structures, in good agreement with recent folding experiments. Our CGMD platform and dynamic bonding model (implemented as an open-source custom plugin to HOOMD-Blue) reveal the molecular features governing the binding patch size and valence control, and opens the study of pathways in colloidomer folding. This model can therefore guide programmable design in experiments. △ Less

Submitted 14 February, 2023; v1 submitted 22 December, 2022; originally announced December 2022.

Comments: 14 pages + 11 pages SI. 10 figures + 9 supplemental figures + 6 supplemental tables

Journal ref: Soft Matter 2023

Environmental Do**-Induced Degradation of the Quantum Anomalous Hall Insulators

Authors: Han Tay, Yi-Fan Zhao, Ling-Jie Zhou, Ruoxi Zhang, Zi-Jie Yan, Deyi Zhuo, Moses H. W. Chan, Cui-Zu Chang

Abstract: The quantum anomalous Hall (QAH) insulator is a topological quantum state with quantized Hall resistance and zero longitudinal resistance in the absence of an external magnetic field. The QAH insulator carries spin-polarized dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances on th… ▽ More The quantum anomalous Hall (QAH) insulator is a topological quantum state with quantized Hall resistance and zero longitudinal resistance in the absence of an external magnetic field. The QAH insulator carries spin-polarized dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances on the QAH effect over the past decade, the QAH insulator has thus far eluded any practical applications. In addition to its low working temperature, the QAH state in magnetically doped topological insulator (TI) films/heterostructures usually deteriorates with time in ambient conditions. In this work, we prepare three QAH devices with similar initial properties and store them in different environments to investigate the evolution of their transport properties. The QAH device without a protection layer in air show clear degradation and becomes hole-doped with the charge neutral point shifting significantly to positive gate voltages. The QAH device kept in an argon glove box without a protection layer shows no measurable degradation after 560 hours and the device protected by a 3 nm AlOx protection layer in air shows minimal degradation with stable QAH properties. Our work shows a route to preserve the dissipation-free chiral edge state in QAH devices for potential applications in quantum information technology. △ Less

Submitted 16 December, 2022; originally announced December 2022.

Comments: 18 pages, 4 figures. A REU project. Comments are welcome

Journal ref: Nano Lett. 23, 1093-1099(2023)

Ion-beam Assisted Sputtering of Titanium Nitride Thin Films

Authors: Timothy Draher, Tomas Polakovic, Juliang Li, Yi Li, Ulrich Welp, Jidong Samuel Jiang, John Pearson, Whitney Armstrong, Zein-Eddine Meziani, Clarence Chang, Wai-Kwong Kwok, Zhili Xiao, Valentine Novosad

Abstract: Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In previous work on niobium nitride, ion beam-assisted sputtering (IBAS) reduced nitrogen sensitivity during deposition in tandem with an increase in nominal critical t… ▽ More Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In previous work on niobium nitride, ion beam-assisted sputtering (IBAS) reduced nitrogen sensitivity during deposition in tandem with an increase in nominal critical temperature. We have deposited thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method and compare their superconducting critical temperatures Tc as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and X-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature and 33% reduced sensitivity to nitrogen flow, without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting Tc in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting Tc due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models. △ Less

Submitted 12 April, 2023; v1 submitted 26 October, 2022; originally announced October 2022.

Creation of Chiral Interface Channels for Quantized Transport in Magnetic Topological Insulator Multilayer Heterostructures

Authors: Yi-Fan Zhao, Ruoxi Zhang, Jiaqi Cai, Deyi Zhuo, Ling-Jie Zhou, Zi-Jie Yan, Moses H. W. Chan, Xiaodong Xu, Cui-Zu Chang

Abstract: One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero m… ▽ More One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy (MBE) to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a 1D junction. For the junction between C = 1 and C = -1 QAH insulators, we observe quantized transport and demonstrate the appearance of the two parallel propagating CICs along the magnetic domain wall at zero magnetic field. Moreover, since the Chern number of the QAH insulators in magnetic topological insulator (TI)/TI multilayers can be tuned by altering magnetic TI/TI bilayer periods, the junction between two QAH insulators with arbitrary Chern numbers can be achieved by growing different periods of magnetic TI/TI on the two sides of the sample. For the junction between C = 1 and C = 2 QAH insulators, our quantized transport shows that a single CIC appears at the interface. Our work lays down the foundation for the development of QAH insulator-based electronic and spintronic devices, topological chiral networks, and topological quantum computations. △ Less

Submitted 8 October, 2022; originally announced October 2022.

Comments: 20 pages, 4 figures, comments are welcome

Journal ref: Nature Commun. 14, 770 (2023)

Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy

Authors: S. Shrestha, C. S. Chang, S. Lee, N. L. Kothalawala, D. Y. Kim, M. Minola, J. Kim, A. Seo

Abstract: Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samp… ▽ More Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 6 pages, 3 figures

Fully saturated hydrocarbons as hosts of optical cycling centers

Authors: Claire E. Dickerson, Cecilia Chang, Han Guo, Anastassia N. Alexandrova

Abstract: Designing closed, laser-induced optical cycling transitions in trapped atoms or molecules is useful for quantum information processing, precision measurement, and quantum sensing. Larger molecules that feature such closed transitions are particularly desirable, as they extend the scope of applicability of such systems. The search for molecules with robust optically cycling centers has been a chall… ▽ More Designing closed, laser-induced optical cycling transitions in trapped atoms or molecules is useful for quantum information processing, precision measurement, and quantum sensing. Larger molecules that feature such closed transitions are particularly desirable, as they extend the scope of applicability of such systems. The search for molecules with robust optically cycling centers has been a challenge, and requires design principles beyond trial-and-error. Here, two design principles are proposed for the particular architecture of M-O-R, where M is an alkaline earth metal radical, and R is a ligand: 1) Fairly large saturated hydrocarbons can serve as ligands, R, due to a substantial HOMO-LUMO gap that encloses the cycling transition, so long as the R group is rigid. 2) Electron-withdrawing groups, via induction, can enhance Franck-Condon factors (FCFs) of the optical cycling transition, as long as they do not disturb the locally linear structure in the M-O-R motif. With these tools in mind, larger molecules can be trapped and used as optical cycling centers, sometimes with higher FCFs than smaller molecules. △ Less

Submitted 22 August, 2023; v1 submitted 20 September, 2022; originally announced September 2022.

Comments: Erratum: The original publication used an incorrect grant number for the NSF Center for Chemical Innovation, Phase I. The correct number should be CHE-2221453

A Stress Induced Source of Phonon Bursts and Quasiparticle Poisoning

Authors: Robin Anthony-Petersen, Andreas Biekert, Raymond Bunker, Clarence L. Chang, Yen-Yung Chang, Luke Chaplinsky, Eleanor Fascione, Caleb W. Fink, Maurice Garcia-Sciveres, Richard Germond, Wei Guo, Scott A. Hertel, Ziqing Hong, Noah Kurinsky, Xinran Li, Junsong Lin, Marharyta Lisovenko, Rupak Mahapatra, Adam Mayer, Daniel McKinsey, Siddhant Mehrotra, Nader Mirabolfathi, Brian Neblosky, William A. Page, Pratyush K. Patel , et al. (21 additional authors not shown)

Abstract: The performance of superconducting qubits is degraded by a poorly characterized set of energy sources breaking the Cooper pairs responsible for superconductivity, creating a condition often called "quasiparticle poisoning." Recently, a superconductor with one of the lowest average quasiparticle densities ever measured exhibited quasiparticles primarily produced in bursts which decreased in rate wi… ▽ More The performance of superconducting qubits is degraded by a poorly characterized set of energy sources breaking the Cooper pairs responsible for superconductivity, creating a condition often called "quasiparticle poisoning." Recently, a superconductor with one of the lowest average quasiparticle densities ever measured exhibited quasiparticles primarily produced in bursts which decreased in rate with time after cooldown. Similarly, several cryogenic calorimeters used to search for dark matter have also observed an unknown source of low-energy phonon bursts that decrease in rate with time after cooldown. Here, we show that a silicon crystal glued to its holder exhibits a rate of low-energy phonon events that is more than two orders of magnitude larger than in a functionally identical crystal suspended from its holder in a low-stress state. The excess phonon event rate in the glued crystal decreases with time since cooldown, consistent with a source of phonon bursts which contributes to quasiparticle poisoning in quantum circuits and the low-energy events observed in cryogenic calorimeters. We argue that relaxation of thermally induced stress between the glue and crystal is the source of these events, and conclude that stress relaxation contributes to quasiparticle poisoning in superconducting qubits and the athermal phonon background in a broad class of rare-event searches. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Comments: 13 pages, 6 figures. W. A. Page and R. K. Romani contributed equally to this work. Correspondence should be addressed to R. K. Romani

Topological Defect Lines in Two Dimensional Fermionic CFTs

Authors: Chi-Ming Chang, ** Chen, Fengjun Xu

Abstract: We consider topological defect lines (TDLs) in two-dimensional fermionic conformal field theories (CFTs). Besides inheriting all the properties of TDLs in bosonic CFTs, TDLs in fermionic CFTs could host fermionic defect operators at their endpoints and junctions. Furthermore, there is a new type of TDLs, called q-type TDLs, that have no analog in bosonic CFTs. Their distinguishing feature is an ex… ▽ More We consider topological defect lines (TDLs) in two-dimensional fermionic conformal field theories (CFTs). Besides inheriting all the properties of TDLs in bosonic CFTs, TDLs in fermionic CFTs could host fermionic defect operators at their endpoints and junctions. Furthermore, there is a new type of TDLs, called q-type TDLs, that have no analog in bosonic CFTs. Their distinguishing feature is an extra one-dimensional Majorana fermion living on the worldline of the TDLs. The properties of TDLs in fermionic CFTs are captured in the mathematical language of the super fusion category. We propose a classification of the rank-2 super fusion categories generalizing the $\mathbb Z_8$ classification for the anomalies of $\mathbb Z_2$ symmetry. We explicitly solve the F-moves for all the nontrivial categories, and derive the corresponding spin selection rules that constrain the spectrum of the defect operators. We find the full set of TDLs in the standard fermionic minimal models and a partial set of TDLs in the two exceptional models, which give CFT realizations to the rank-2 super fusion categories. Finally, we discuss a constraint on the renormalization group flow that preserves a q-type TDL. △ Less

Submitted 3 April, 2023; v1 submitted 4 August, 2022; originally announced August 2022.

Comments: 48+21 pages, added references, added sec.4.2 and sec.5, minor corrections

Journal ref: SciPost Phys. 15, 216 (2023)

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

Authors: Ling-Jie Zhou, Ruobing Mei, Yi-Fan Zhao, Ruoxi Zhang, Deyi Zhuo, Zi-Jie Yan, Wei Yuan, Morteza Kayyalha, Moses H. W. Chan, Chao-Xing Liu, Cui-Zu Chang

Abstract: In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the one-dimensional (1D) edges and exponentially decay in the two-dimensional (2D) bulk. In this work, we present the results of a systematic study of QAH de… ▽ More In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the one-dimensional (1D) edges and exponentially decay in the two-dimensional (2D) bulk. In this work, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~72 nm, implying the intrinsic decaying length of CECs is less than ~36 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 um. Our theoretical calculations suggest that the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Comments: 19 pages, 5 figures, comments are welcome

Journal ref: Phys. Rev. Lett. 130, 086201(2023)

Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity

Authors: Tilo H. Yang, Hsiang-Chi Hu, Fu-Xiang Rikudo Chen, Po-Yen Lin, Yu-Fan Chiang, Wen-Hao Chang, Yi-Hao Kuo, Yu-Seng Ku, Bor-Wei Liang, Alice Chinghsuan Chang, Han-Chieh Lo, Yu-Chen Chang, Yi-Cheng Chen, Ting-Hua Lu, Chun-Liang Lin, Yann-Wen Lan

Abstract: The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest… ▽ More The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect to common chemical vapor deposition synthesis. The alternation of 3R polytypes in the MoS2 homoepitaxial patterns, observed by scanning transmission electron microscopy, accounts for ferroelectricity switching. The MoS2 field-effect transistors with 3R polytypic domains exhibit a repeatable counterclockwise hysteresis with gate voltage swee**, an indication of ferroelectricity switching, and the memory window exceeds those measured for compact-shaped 3R bilayer devices. This work provides a direct growth concept for layered 3R-based ferroelectric memory. △ Less

Submitted 24 May, 2022; originally announced May 2022.