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Superconductivity in kagome metal ThRu3Si2
Authors:
Yi Liu,
**g Li,
Wu-Zhang Yang,
Jia-Yi Lu,
Bo-Ya Cao,
Hua-Xun Li,
Wan-Li Chai,
Si-Qi Wu,
Bai-Zhuo Li,
Yun-Lei Sun,
Wen-He Jiao,
Wang Cao,
Xiao-Feng Xu,
Ren Zhi,
Guang-Han Cao
Abstract:
We report the physical properties of ThRu$_3$Si$_2$ featured with distorted Ru kagome lattice. The combined experiments of resistivity, magnetization and specific heat reveal bulk superconductivity with $T_{\rm{c}}$ = 3.8 K. The specific heat jump and calculated electron-phonon coupling indicate a moderate coupled BCS superconductor. In comparison with LaRu$_3$Si$_2$, the calculated electronic str…
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We report the physical properties of ThRu$_3$Si$_2$ featured with distorted Ru kagome lattice. The combined experiments of resistivity, magnetization and specific heat reveal bulk superconductivity with $T_{\rm{c}}$ = 3.8 K. The specific heat jump and calculated electron-phonon coupling indicate a moderate coupled BCS superconductor. In comparison with LaRu$_3$Si$_2$, the calculated electronic structure in ThRu$_3$Si$_2$ shows an electron-do** effect with electron filling lifted from 100 meV below flat bands to 300 meV above it. This explains the lower superconducting transition temperature and weaker electron correlations observed in ThRu$_3$Si$_2$. Our work suggests the $T_{\rm{c}}$ and electronic correlations in kagome superconductor could have intimate connection with the flat bands.
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Submitted 8 March, 2024;
originally announced March 2024.
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Superconductivity emerging from density-wave-like order in a correlated kagome metal
Authors:
Yi Liu,
Zi-Yi Liu,
**-Ke Bao,
Peng-Tao Yang,
Liang-Wen Ji,
Si-Qi Wu,
Qin-Xin Shen,
Jun Luo,
Jie Yang,
Ji-Yong Liu,
Chen-Chao Xu,
Wu-Zhang Yang,
Wan-Li Chai,
Jia-Yi Lu,
Chang-Chao Liu,
Bo-Sen Wang,
Hao Jiang,
Qian Tao,
Zhi Ren,
Xiao-Feng Xu,
Chao Cao,
Zhu-An Xu,
Rui Zhou,
**-Guang Cheng,
Guang-Han Cao
Abstract:
Unconventional superconductivity (USC) in a highly correlated kagome system has been theoretically proposed for years, yet the experimental realization is hard to achieve. The recently discovered vanadium-based kagome materials, which exhibit both superconductivity and charge density wave (CDW) orders, are nonmagnetic and weakly correlated, thus unlikely host USC as theories proposed. Here we repo…
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Unconventional superconductivity (USC) in a highly correlated kagome system has been theoretically proposed for years, yet the experimental realization is hard to achieve. The recently discovered vanadium-based kagome materials, which exhibit both superconductivity and charge density wave (CDW) orders, are nonmagnetic and weakly correlated, thus unlikely host USC as theories proposed. Here we report the discovery of a chromium-based kagome metal, CsCr$_3$Sb$_5$, which is contrastingly characterised by strong electron correlations, frustrated magnetism, and characteristic flat bands close to the Fermi level. Under ambient pressure, it undergoes a concurrent structural and magnetic phase transition at 55 K, accompanying with a stripe-like $4a_0$ structural modulation. At high pressure, the phase transition evolves into two transitions, probably associated with CDW and antiferromagnetic spin-density-wave orderings, respectively. These density-wave (DW)-like orders are gradually suppressed with pressure and, remarkably, a superconducting dome emerges at 3.65-8.0 GPa. The maximum of the superconducting transition temperature, $T_\mathrm{c}^{\mathrm{max}}=$ 6.4 K, appears when the DW-like orders are completely suppressed at 4.2 GPa, and the normal state exhibits a non-Fermi-liquid behaviour, reminiscent of USC and quantum criticality in iron-based superconductors. Our work offers an unprecedented platform for investigating possible USC in a correlated kagome system.
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Submitted 16 March, 2024; v1 submitted 23 September, 2023;
originally announced September 2023.
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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
