Showing 1–50 of 63 results for author: Cha, S

Enhancing resonant second harmonic generation in bilayer WSe2 by layer-dependent exciton-polaron effect

Authors: Soonyoung Cha, Tianyi Ouyang, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Chun Hung Lui

Abstract: Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages s… ▽ More Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages strong exciton resonance and layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. Our method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ~3% of the critical breakdown field. Our findings also reveal significant sensitivity of resonant SHG to carrier density and carrier type, with distinct enhancement and quenching observed across different gating regimes. This advancement offers an innovative approach to manipulating SHG in 2D excitonic materials and provides a potent spectroscopic tool for probing layer-dependent quantum states. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Authors: Hyun-Jae Lee, Kyoung-June Go, Pawan Kumar, Chang Hoon Kim, Yungyeom Kim, Kyoungjun Lee, Takao Shimizu, Seung Chul Chae, Hosub **, Minseong Lee, Umesh Waghmare, Si-Young Choi, Jun Hee Lee

Abstract: Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles… ▽ More Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications. △ Less

Submitted 3 March, 2024; originally announced March 2024.

Comments: 24 pages, 4 figures

Highly-Sensitive Resonance-Enhanced Organic Photodetectors for Shortwave Infrared Sensing

Authors: Hoang Mai Luong, Chokchai Kaiyasuan, Ahra Yi, Sangmin Chae, Brian Minki Kim, Patchareepond Panoy, Hyo Jung Kim, Vinich Promarak, Yasuo Miyata, Hidenori Nakayama, Thuc-Quyen Nguyen

Abstract: Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applic… ▽ More Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applicable strategy to extend the wavelength detection range of OPD to a longer wavelength, using resonant optical microcavity. We demonstrate a proof-of-concept in PTB7-Th:COTIC-4F blend system, achieving external quantum efficiency (EQE) > 50 % over a broad spectrum 450 - 1100 nm with a peak specific detectivity (D*) of 1.1E13 Jones at 1100 nm, while cut-off bandwidth, speed, and linearity are preserved. By employing a novel small-molecule acceptor IR6, a record high EQE = 35 % and D* = 4.1E12 Jones are obtained at 1150 nm. This research emphasizes the importance of optical design in optoelectronic devices, presenting a considerably simpler method to expand the photodetection range compared to a traditional approach that involves develo** absorbers with narrow optical gaps. △ Less

Submitted 13 September, 2023; originally announced September 2023.

In-plane anisotropy in biaxial ReS2 crystals probed by nano-optical imaging of waveguide modes

Authors: Fabian Mooshammer, Sanghoon Chae, Shuai Zhang, Yinming Shao, Siyuan Qiu, Anjaly Rajendran, Aaron J. Sternbach, Daniel J. Rizzo, Xiaoyang Zhu, P. James Schuck, James C. Hone, D. N. Basov

Abstract: Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rheni… ▽ More Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rhenium disulfide (ReS2) crystals across a wide range of near-infrared frequencies. By tracing the evolution of these modes as a function of crystallographic direction, polarization of the electric field and sample thickness, we have determined the anisotropic dielectric tensor including the elusive out-of-plane response. The excitonic absorption at ~1.5 eV manifests itself as a clear backbending feature in the WM dispersion and a reduction of the quality factors as fully supported by numerical calculations. Our results extend the sensitivity of near-field microscopy towards biaxial anisotropy and provide key insights into the optoelectronic properties of ReS2. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics (copyright ©American Chemical Society) after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.1c01841

Journal ref: ACS Photonics 9, 443-451 (2022)

Gate-tunable quantum pathways of high harmonic generation in graphene

Authors: Soonyoung Cha, Minjeong Kim, Youngjae Kim, Shinyoung Choi, Sejong Kang, Hoon Kim, Sangho Yoon, Gunho Moon, Taeho Kim, Ye Won Lee, Gil Young Cho, Moon Jeong Park, Cheol-Joo Kim, B. J. Kim, JaeDong Lee, Moon-Ho Jo, Jonghwan Kim

Abstract: Under strong laser fields, electrons in solids radiate high-harmonic fields by travelling through quantum pathways in Bloch bands in the sub-laser-cycle timescales. Understanding these pathways in the momentum space through the high-harmonic radiation can enable an all-optical ultrafast probe to observe coherent lightwave-driven processes and measure electronic structures as recently demonstrated… ▽ More Under strong laser fields, electrons in solids radiate high-harmonic fields by travelling through quantum pathways in Bloch bands in the sub-laser-cycle timescales. Understanding these pathways in the momentum space through the high-harmonic radiation can enable an all-optical ultrafast probe to observe coherent lightwave-driven processes and measure electronic structures as recently demonstrated for semiconductors. However, such demonstration has been largely limited for semimetals because the absence of the bandgap hinders an experimental characterization of the exact pathways. In this study, by combining electrostatic control of chemical potentials with HHG measurement, we resolve quantum pathways of massless Dirac fermions in graphene under strong laser fields. Electrical modulation of HHG reveals quantum interference between the multi-photon interband excitation channels. As the light-matter interaction deviates beyond the perturbative regime, elliptically polarized laser fields efficiently drive massless Dirac fermions via an intricate coupling between the interband and intraband transitions, which is corroborated by our theoretical calculations. Our findings pave the way for strong-laser-field tomography of Dirac electrons in various quantum semimetals and their ultrafast electronics with a gate control. △ Less

Submitted 16 October, 2022; originally announced October 2022.

Comments: 33 pages, 4 figures, Soonyoung Cha and Minjeong Kim contributed equally to this work, To whom correspondence should be addressed: jonghwankim@postech

Atomically imprinted graphene plasmonic cavities

Authors: Brian S. Y. Kim, Aaron J. Sternbach, Min Sup Choi, Zhiyuan Sun, Francesco L. Ruta, Yinming Shao, Alexander S. McLeod, Lin Xiong, Yinan Dong, Anjaly Rajendran, Song Liu, Ankur Nipane, Sang Hoon Chae, Amirali Zangiabadi, Xiaodong Xu, Andrew J. Millis, P. James Schuck, Cory. R. Dean, James C. Hone, D. N. Basov

Abstract: Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene p… ▽ More Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt do** profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials. △ Less

Submitted 25 June, 2022; originally announced June 2022.

Comments: 17 pages, 4 figures

Infrared Plasmons Propagate through a Hyperbolic Nodal Metal

Authors: Yinming Shao, Aaron J. Sternbach, Brian S. Y. Kim, Andrey A. Rikhter, Xinyi Xu, Umberto De Giovannini, Ran **g, Sang Hoon Chae, Zhiyuan Sun, Seng Huat Lee, Yanglin Zhu, Zhiqiang Mao, J. Hone, Raquel Queiroz, A. J. Millis, P. James Schuck, A. Rubio, M. M. Fogler, D. N. Basov

Abstract: Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and a… ▽ More Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and artificial metamaterials. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. Yet this behavior remains elusive, primarily because interband losses arrest the propagation of infrared modes. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The observed waveguiding originates from polaritonic hybridization between near-infrared light and nodal-line plasmons. Unique nodal electronic structures simultaneously suppress interband loss and boost the plasmonic response, ultimately enabling the propagation of infrared modes through the bulk of the crystal. △ Less

Submitted 3 June, 2022; originally announced June 2022.

Journal ref: Sci. Adv. 8, eadd6169 (2022)

Unzip** hBN with ultrashort mid-infrared pulses

Authors: Cecilia Y. Chen, Jared S. Ginsberg, Samuel L. Moore, M. Mehdi Jadidi, Rishi Maiti, Baichang Li, Sang Hoon Chae, Anjaly Rajendran, Gauri N. Patwardhan, Kenji Watanabe, Takashi Taniguchi, James Hone, D. N. Basov, Alexander L. Gaeta

Abstract: Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation… ▽ More Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzip**" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 11 pages, 4 figures

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Authors: Su-Beom Song, Sangho Yoon, So Young Kim, Sera Yang, Seung-Young Seo, Soonyoung Cha, Hyeon-Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Lee, Jun Sung Kim, Moon-Ho Jo, Jonghwan Kim

Abstract: Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electrolumin… ▽ More Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Comments: 29 pages, 4 figures, Su-Beom Song and Sangho Yoon contributed equally to this work, To whom correspondence should be addressed: [email protected]

Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N$_2$ semiconductors

Authors: Malhar Kute, Zihao Deng, Sieun Chae, Emmanouil Kioupakis

Abstract: The II-IV-N$_2$ class of heterovalent ternary nitrides have gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this study, we apply first-principles calculations based on density functional theory to systematically investigate the effects of structural distortions due to cation size mismatch on the configurational disorder of the cati… ▽ More The II-IV-N$_2$ class of heterovalent ternary nitrides have gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this study, we apply first-principles calculations based on density functional theory to systematically investigate the effects of structural distortions due to cation size mismatch on the configurational disorder of the cation sublattice and the valence band structure in this class of materials. We find that larger size mismatch between the group-II and the group-IV cations results in stronger lattice distortions from the ideal hexagonal ratio, which in turn inhibits the propensity of these materials towards octet-rule violating cation disorder. We also demonstrate that the formation energy of a single cation antisite pair, which is fast and simple to calculate, is a strong indicator of a material's propensity towards disorder. Furthermore, the breaking of in-plane symmetry leads to a splitting of the top three valence bands at $Γ$, which is also directly related to the magnitude of structural distortions. Our work demonstrates that the structural and functional properties of the II-IV-N$_2$ materials can be finely tuned through controllable structural distortions that stem from the choice of cations. △ Less

Submitted 12 September, 2021; originally announced September 2021.

Phonon-Enhanced Nonlinearities in Hexagonal Boron Nitride

Authors: Jared S. Ginsberg, M. Mehdi Jadidi, ** Zhang, Cecilia Y. Chen, Nicolas Tancogne-Dejean, Sang Hoon Chae, Gauri N. Patwardhan, Lede Xian, Kenji Watanabe, Takashi Taniguchi, James Hone, Angel Rubio, Alexander L. Gaeta

Abstract: We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant excitation. The resulting FWM signal allows for time-resolved observation of the crystal motion. In addition, we observe enhancements of third-harmonic generation… ▽ More We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant excitation. The resulting FWM signal allows for time-resolved observation of the crystal motion. In addition, we observe enhancements of third-harmonic generation with resonant pum** at the hBN transverse optical phonon. Phonon-induced nonlinear enhancements are also predicted to yield large increases in high-harmonic efficiencies. △ Less

Submitted 17 July, 2023; v1 submitted 26 July, 2021; originally announced July 2021.

Comments: 9 pages, 5 figures

Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO$_2$

Authors: S. Chae, K. A. Mengle, K. Bushick, J. Lee, N. Sanders, Z. Deng, Z. Mi, P. F. P. Poudeu, H. Paik, J. T. Heron, E. Kioupakis

Abstract: Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMO… ▽ More Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar do** of UWBG materials will enable a wider range of applications in power electronics as well as deep- UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved do** and transport properties. As an example, we discuss the case of rutile GeO$_2$ (r-GeO$_2$), a water-insoluble GeO$_2$ polytype which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than \b{eta}-Ga$_2$O$_3$. The subsequent realization of single-crystalline r-GeO$_2$ thin films by molecular beam epitaxy provides the opportunity to realize r-GeO$_2$ for electronic applications. Future efforts towards the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled do** in high-quality thin films with lower dislocation densities and optimized film properties. △ Less

Submitted 1 July, 2021; v1 submitted 14 May, 2021; originally announced May 2021.

Comments: 30 pages, 5 figures

Journal ref: Appl. Phys. Lett. 118, 260501 (2021)

Assortative clustering in a one-dimensional population with replication strategies

Authors: Sunhee Chae, Nahyeon Lee, Seung Ki Baek, Hyeong-Chai Jeong

Abstract: In a geographically distributed population, assortative clustering plays an important role in evolution by modifying local environments. To examine its effects in a linear habitat, we consider a one-dimensional grid of cells, where each cell is either empty or occupied by an organism whose replication strategy is genetically inherited to offspring. The strategy determines whether to have offspring… ▽ More In a geographically distributed population, assortative clustering plays an important role in evolution by modifying local environments. To examine its effects in a linear habitat, we consider a one-dimensional grid of cells, where each cell is either empty or occupied by an organism whose replication strategy is genetically inherited to offspring. The strategy determines whether to have offspring in surrounding cells, as a function of the neighborhood configuration. If more than one offspring compete for a cell, then they can be all exterminated due to the cost of conflict depending on environmental conditions. We find that the system is more densely populated in an unfavorable environment than in a favorable one because only the latter has to pay the cost of conflict. This observation agrees reasonably well with a mean-field analysis which takes assortative clustering of strategies into consideration. Our finding suggests a possibility of intrinsic nonlinearity between environmental conditions and population density when an evolutionary process is involved. △ Less

Submitted 14 March, 2021; originally announced March 2021.

Comments: 7 pages, 6 figures

Journal ref: Physical Review E 103, 032114 (2021)

Recrystallization Characteristics of Catalytic Alloy and Graphite in Diamond Synthesis

Authors: Sang Jun Cha, Myong Chol Pak, Kwang-Il Kim, Su Gon Kim

Abstract: We first consider the recrystallization characteristics of catalysis alloy and graphite in the process of diamond synthesis under the condition of super high pressure and high temperature in catalysis method. In the process of diamond synthesis catalysis metal is plastically deformed by increase of pressure and then recrystallized as increasing the temperature. As catalysis metal is recrystallized… ▽ More We first consider the recrystallization characteristics of catalysis alloy and graphite in the process of diamond synthesis under the condition of super high pressure and high temperature in catalysis method. In the process of diamond synthesis catalysis metal is plastically deformed by increase of pressure and then recrystallized as increasing the temperature. As catalysis metal is recrystallized, the shape of graphite particle is in spherical shape in the region contacting with the catalyst but in any shape in the opposite region. In addition, we calculate the electron charge density distribution and cohesive energies of cementite structure using the first principle method to investigate the reciprocal interaction between transient metal elements and carbon atoms in high-temperature catalyst synthesis. After determination of lattice constant parameters, we obtain the cohesive energy by subtracting the total energy of the crystal from the summation of total energies of atoms composing the crystal and dividing it by the number of atoms. Therefore, the effect of the catalyst on the diamond synthesis is to be analyzed theoretically. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 11 pages, 5 figures

Journal ref: J. Superhard Mater. 43 (2021) 336-343

Spectral functions of CVD grown MoS$_2$ monolayers after chemical transfer onto Au surface

Authors: Sung Won Jung, Sangyeon Pak, Sanghyo Lee, Sonka Reimers, Saumya Mukherjee, Pavel Dudin, Timur K. Kim, Mattia Cattelan, Neil Fox, Sarnjeet S. Dhesi, Cephise Cacho, SeungNam Cha

Abstract: The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain h… ▽ More The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Electron and hole mobility of rutile GeO$_2$ from first principles: an ultrawide-band-gap semiconductor for power electronics

Authors: Kyle Bushick, Kelsey A. Mengle, Sieun Chae, Emmanouil Kioupakis

Abstract: Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon c… ▽ More Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO$_2$ and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are $μ_{\text{elec},\perp \vec{c}}$=244 cm$^2$ V$^{-1}$ s$^{-1}$, $μ_{\text{elec},||\vec{c}}$=377 cm$^2$ V$^{-1}$ s$^{-1}$, $μ_{\text{hole},\perp \vec{c}}$=27 cm$^2$ V$^{-1}$ s$^{-1}$, and $μ_{\text{hole},||\vec{c}}$=29 cm$^2$ V$^{-1}$ s$^{-1}$. At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n-type r-GeO$_2$ surpasses several incumbent semiconductors such as Si, SiC, GaN, and $β$-Ga$_2$O$_3$, demonstrating its superior performance in high-power electronic devices. △ Less

Submitted 7 November, 2020; v1 submitted 21 November, 2019; originally announced November 2019.

Journal ref: Appl. Phys. Lett. 117, 182104 (2020)

Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility

Authors: Kyle Bushick, Sieun Chae, Zihao Deng, John Heron, Emmanouil Kioupakis

Abstract: BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain d… ▽ More BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain decreases the band gap independent of sign or direction. In addition, biaxial tensile strain increases the in-plane electron and hole mobilities by more than 60% compared to the unstrained values due to a reduction of the electron effective mass and of hole interband scattering. Moreover, BAs is shown to be nearly lattice-matched with InGaN and ZnSnN2, two important optoelectronic semiconductors with tunable band gaps by alloying and cation disorder, respectively. The results predict type-II band alignments and determine the absolute band offsets of these two materials with BAs. The combination of the ultra-high thermal conductivity and intrinsic p-type character of BAs, with its high electron and hole mobilities that can be further increased by tensile strain, as well as the lattice-match and the type-II band alignment with intrinsically n-type InGaN and ZnSnN2 demonstrate the potential of BAs heterostructures for electronic and optoelectronic devices. △ Less

Submitted 3 September, 2019; originally announced September 2019.

Quasiparticle band structure and optical properties of rutile GeO$_2$, an ultra-wide-band-gap semiconductor

Authors: Kelsey A. Mengle, Sieun Chae, Emmanouil Kioupakis

Abstract: Rutile GeO$_2$ is a visible and near-ultraviolet-transparent oxide that has not been explored for semiconducting applications in electronic and optoelectronic devices. We investigate the electronic and optical properties of rutile GeO$_2$ with first-principles calculations based on density functional theory and many-body perturbation theory. Our band-structure calculations indicate a dipole-forbid… ▽ More Rutile GeO$_2$ is a visible and near-ultraviolet-transparent oxide that has not been explored for semiconducting applications in electronic and optoelectronic devices. We investigate the electronic and optical properties of rutile GeO$_2$ with first-principles calculations based on density functional theory and many-body perturbation theory. Our band-structure calculations indicate a dipole-forbidden direct band gap at $Γ$ with an energy of 4.44 eV and effective masses equal to $m^*_{e\perp}$ =0.43$m_0$ , $m^*_{e||}$ =0.23$m_0$ , $m^*_{h\perp}$ =1.28$m_0$ , and $m^*_{h||}$=1.74$m_0$ . In contrast to the self-trapped hole polarons by lattice distortions in other wide-band-gap oxides that reduce the hole mobility, holes in rutile GeO$_2$ are delocalized due to their small effective mass. The first allowed optical transitions at $Γ$ occur at 5.04 eV ($\vec{E} \perp \vec{c}$) and 6.65 eV ($\vec{E} ||\vec{c} $). We also evaluate the optical absorption coefficient and refractive index along both crystallographic directions. Our estimates for the exciton binding energies using the Bohr model are close to the reported experimental value. The ultra-wide-band-gap and light carrier effective masses of rutile GeO$_2$, coupled with its optical transparency in the visible and near UV are promising for applications in UV-transparent conductors and solar-blind photodetectors. △ Less

Submitted 24 August, 2019; v1 submitted 24 May, 2019; originally announced May 2019.

Journal ref: Journal of Applied Physics 126, 085703 (2019)

A pseudo-capacitive chalcogenide-based electrode with dense 1-dimensional nanoarrays for enhanced energy density in asymmetric supercapacitors

Authors: Young-Woo Lee, Byung-Sung Kima, Jong Hong, Juwon Lee, Sangyeon Pak, Hyeon-Sik Jang, Dongmok Whang, SeungNam Cha, Jung Inn Sohn, Jong Min Kim

Abstract: To achieve the further development of supercapacitors (SCs), which have intensively received attention as a next-generation energy storage system, the rational design of active electrode materials with electrochemically more favorable structure is one of the most important factors to improve the SC performance with high specific energy and power density. We propose and successfully grow copper sul… ▽ More To achieve the further development of supercapacitors (SCs), which have intensively received attention as a next-generation energy storage system, the rational design of active electrode materials with electrochemically more favorable structure is one of the most important factors to improve the SC performance with high specific energy and power density. We propose and successfully grow copper sulfide (CuS) nanowires (NWs) as a chalcogenide-based electrode material directly on a Cu mesh current collector using the combination of a facile liquid-solid chemical oxidation process and an anion exchange reaction. We found that the as-prepared CuS NWs have well-arrayed structures with nanosized crystal grains, a high aspect ratio and density, as well as a good mechanical and electrical contact to the Cu mesh. The obtained CuS NW based electrodes, with additional binder- and conductive material-free, exhibit a much higher areal capacitance of 378.0 mF/cm2 and excellent cyclability of an approximately 90.2 percentage retention during 2000 charge/discharge cycles due to their unique structural, electrical, and electrochemical properties. Furthermore, for practical SC applications, an asymmetric supercapacitor is fabricated using active carbon as an anode and CuS NWs as a cathode, and exhibits the good capacitance retention of 91% during 2000 charge/discharge processes and the excellent volumetric energy density of 1.11 mW h/cm3 compared to other reported pseudo-capacitive SCs. △ Less

Submitted 15 May, 2019; originally announced May 2019.

Comments: 18 pages, 4 figures

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

Authors: Kyeong Tae Kang, Chang Jae Roh, **young Lim, Taewon Min, Jun Han Lee, Kyoungjun Lee, Tae Yoon Lee, Seunghun Kang, Daehee Seol, Jiwoong Kim, Hiromichi Ohta, Amit Khare, Sungkyun Park, Yunseok Kim, Seung Chul Chae, Yoon Seok Oh, Jaekwang Lee, Jaejun Yu, Jong Seok Lee, Woo Seok Choi

Abstract: Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Be… ▽ More Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Comments: 28 pages, 1 table, 3 figures, 5 supplementary figures

Journal ref: published in 2019

Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar do**

Authors: Sieun Chae, Jihang Lee, Kelsey A. Mengle, John T. Heron, Emmanouil Kioupakis

Abstract: Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar do**, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currentl… ▽ More Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar do**, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currently be realized. Using hybrid density functional theory, we demonstrate rutile germanium oxide (r-GeO2) to be an alternative UWBG (4.68 eV) material that can be ambipolarly doped. We identify SbGe, AsGe, and FO as possible donors with low ionization energies and propose growth conditions to avoid charge compensation by deep acceptors such as VGe and NO. On the other hand, acceptors such as AlGe have relatively large ionization energies (0.45 eV) due to the formation of localized hole polarons and are likely to be passivated by VO, Gei, and self-interstitials. Yet, we find that the co-incorporation of AlGe with interstitial H can increase the solubility limit of Al and enable hole conduction in the impurity band. Our results show that r-GeO2 is a promising UWBG semiconductor that can overcome current do** challenges and enable the next generation of power electronics devices. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: Applied Physics Letters 114, 102104 (2019)

Point defects and dopants of boron arsenide from first-principles calculations: donor compensation and do** asymmetry

Authors: Sieun Chae, Kelsey Mengle, John T. Heron, Emmanouil Kioupakis

Abstract: We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects such as V_B, B_As, B_i-V_B complexes, and antisite pairs are the dominant intrinsic defects. Native BAs is expected to exhibit p-type conduction due to the acce… ▽ More We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects such as V_B, B_As, B_i-V_B complexes, and antisite pairs are the dominant intrinsic defects. Native BAs is expected to exhibit p-type conduction due to the acceptor-type characteristics of V_B and B_As. Among the common impurities we explored, we found that C substitutional defects and H interstitials have relatively low formation energies and are likely to contribute free holes. Interstitial hydrogen is surprisingly also found to be stable in the neutral charge state. Be_B, Si_As and Ge_As are predicted to be excellent shallow acceptors with low ionization energy (< 0.03 eV) and negligible compensation by other point defects considered here. On the other hand, donors such as Se_As, Te_As, Si_B, and Ge_B have a relatively large ionization energy (~0.15 eV) and are likely to be passivated by native defects such as B_As and V_B, as well as C_As, H_i, and H_B. The hole and electron do** asymmetry originates from the heavy effective mass of the conduction band due to its boron orbital character, as well as from boron-related intrinsic defects that compensate donors. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Journal ref: Appl. Phys. Lett. 113, 212101 (2018)

Superconductivity in the Bi/Ni bilayer

Authors: Sung-Po Chao

Abstract: Motivated by the recent observations of possible p-wave superconductivity in the bismuth-nickel (Bi/Ni) bilayer, we explore theoretically the possibilities of realizing p-wave superconductivity in this bilayer. We begin with a literature survey on this system and related materials which have similar superconducting transition temperature. From the survey, the superconducting mechanism in this bila… ▽ More Motivated by the recent observations of possible p-wave superconductivity in the bismuth-nickel (Bi/Ni) bilayer, we explore theoretically the possibilities of realizing p-wave superconductivity in this bilayer. We begin with a literature survey on this system and related materials which have similar superconducting transition temperature. From the survey, the superconducting mechanism in this bilayer system is suggested to be phonon mediated type II superconductivity. A simple model is proposed to explain why the p-wave like Andreev reflection signals are likely to be observed in the surface probe, assuming the strong spin-orbit coupled surface state of Bi thin film is not completely destroyed by the formation of alloys. △ Less

Submitted 27 March, 2019; v1 submitted 15 August, 2018; originally announced August 2018.

Comments: v.2: 11 pages, 4 figures; Appendix and update on recent experimental results added

Journal ref: Phys. Rev. B 99, 064504 (2019)

Surface reconstruction and charge modulation in BaFe2As2 superconducting film

Authors: S. Kim, S. Yi, M. Oh, B. G. Jang, W. Nam, Y. -C. Yoo, M. Lee, H. Jeon, I. Zoh, H. Lee, C. Zhang, K. H. Kim, J. Seo, J. H. Shim, J. S. Chae, Y. Kuk

Abstract: Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those… ▽ More Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those of as-cleaved surfaces from bulk crystals. The electronic structure of the grown film is different from that in bulk, and it is notable that the film exhibits the same superconducting transport properties. We found that the superconducting gap at the surface is screened at the Ba layer surface in STS measurements, and the charge density wave was observed at the surface in sample in the superconducting state. △ Less

Submitted 7 March, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 24 pages 8 figures

Roton entanglement in quenched dipolar Bose-Einstein condensates

Authors: Zehua Tian, Seok-Yeong Chä, Uwe R. Fischer

Abstract: We study quasi-two-dimensional dipolar Bose-Einstein condensates, in which the Bogoliubov excitation spectrum displays, at sufficiently large gas density, a deep roton minimum due to the spatially anisotropic behavior of the dipolar two-body potential. A rapid quench, performed on the speed of sound of excitations propagating on the condensate background, leads to the dynamical Casimir effect, whi… ▽ More We study quasi-two-dimensional dipolar Bose-Einstein condensates, in which the Bogoliubov excitation spectrum displays, at sufficiently large gas density, a deep roton minimum due to the spatially anisotropic behavior of the dipolar two-body potential. A rapid quench, performed on the speed of sound of excitations propagating on the condensate background, leads to the dynamical Casimir effect, which can be characterized by measuring the density-density correlation function. It is shown, for both zero and finite initial temperatures, that the continuous-variable bipartite quantum state of the created quasiparticle pairs with opposite momenta, resulting from the quench, displays an enhanced potential for the presence of entanglement (represented by nonseparable and steerable quasiparticle states), when compared to a gas with solely repulsive contact interactions. Steerable quasiparticle pairs contain momenta from close to the roton, and hence quantum correlations significantly increase in the presence of a deep roton minimum. △ Less

Submitted 28 June, 2018; v1 submitted 21 November, 2017; originally announced November 2017.

Comments: 13+ε pages of RevTex4-1, 7 figures; has been published in Physical Review A

Journal ref: Phys. Rev. A 97, 063611 (2018)

Probing the scale invariance of the inflationary power spectrum in expanding quasi-two-dimensional dipolar condensates

Authors: Seok-Yeong Chä, Uwe R. Fischer

Abstract: We consider an analogue de Sitter cosmos in an expanding quasi-two-dimensional Bose-Einstein condensate with dominant dipole-dipole interactions between the atoms or molecules in the ultracold gas. It is demonstrated that a hallmark signature of inflationary cosmology, the scale invariance of the power spectrum of inflaton field correlations, experiences strong modifications when, at the initial s… ▽ More We consider an analogue de Sitter cosmos in an expanding quasi-two-dimensional Bose-Einstein condensate with dominant dipole-dipole interactions between the atoms or molecules in the ultracold gas. It is demonstrated that a hallmark signature of inflationary cosmology, the scale invariance of the power spectrum of inflaton field correlations, experiences strong modifications when, at the initial stage of expansion, the excitation spectrum displays a roton minimum. Dipolar quantum gases thus furnish a viable laboratory tool to experimentally investigate, with well-defined and controllable initial conditions, whether primordial oscillation spectra deviating from Lorentz invariance at trans-Planckian momenta violate standard predictions of inflationary cosmology. △ Less

Submitted 24 April, 2017; v1 submitted 20 September, 2016; originally announced September 2016.

Comments: 6+epsilon+14 pages, 4+3 figures

Journal ref: Phys. Rev. Lett. 118, 130404 (2017)

A low-field temperature-dependent EPR signal in terraced MgO:Mn2+ nanoparticles: an enhanced Zeeman splitting in the wide-bandgap oxide

Authors: Peter V. Pikhitsa, Sukbyung Chae, Seungha Shin, Mansoo Choi

Abstract: Mn2+ ion do** is used as an electron paramagnetic resonance (EPR) probe to investigate the influence of low-coordination structural defects such as step edges at the surface of terraced (001) MgO nanoparticles on the electronic properties. Beside the well-known hyperfine sextet of Mn2+ ions in the cubic crystal field of MgO, an additional EPR feature with a striking non-monotonous temperature de… ▽ More Mn2+ ion do** is used as an electron paramagnetic resonance (EPR) probe to investigate the influence of low-coordination structural defects such as step edges at the surface of terraced (001) MgO nanoparticles on the electronic properties. Beside the well-known hyperfine sextet of Mn2+ ions in the cubic crystal field of MgO, an additional EPR feature with a striking non-monotonous temperature dependent shift of the g-factor is observed in terraced nanoparticles in the temperature range from 4K to room temperature. By linking the difference in the temperature dependence of the Mn2+ sextet intensity in cubic and terraced nanoparticles with the possible s-d exchange shift and enhanced Zeeman splitting we conclude that the novel EPR feature originates from the loosely trapped charge-compensating carriers at the abundant structural defects at the surface of terraced nanoparticles due to their exchange interaction with neighboring Mn2+ ions. △ Less

Submitted 22 May, 2016; originally announced May 2016.

Comments: 13 pages, 4 figures

Formation of non-cubic nanoparticles from cubic MgO in intensified self-burning of magnesium

Authors: Sukbyung Chae, Peter V. Pikhitsa, Seungha Shin, Chang Hyuk Kim, Sekwon Jung, Mansoo Choi

Abstract: When Mg metal burns in air the resulting rock-salt MgO smoke consists of perfect [100] cubes of about 100 nm. On contrast, we found that intensification of self-burning of Mg micropowder either by injecting it into oxy-hydrogen diffusion flame or under an infrared laser beam switches the growth mechanism producing mostly single-crystalline spheres and terraced nanoparticles. MgO molecule condensat… ▽ More When Mg metal burns in air the resulting rock-salt MgO smoke consists of perfect [100] cubes of about 100 nm. On contrast, we found that intensification of self-burning of Mg micropowder either by injecting it into oxy-hydrogen diffusion flame or under an infrared laser beam switches the growth mechanism producing mostly single-crystalline spheres and terraced nanoparticles. MgO molecule condensation onto primary spherical nanoparticles can account for generation of terraced nanoparticles with regular steps proportional to the nanoparticle size. △ Less

Submitted 26 November, 2015; originally announced November 2015.

Comments: 16 pages, 5 figures

Controversy over large proximity induced s wave like pairing from a d wave superconductor

Authors: Wan-Ju Li, Sung-Po Chao, Ting-Kuo Lee

Abstract: Proximity effect is used to generate effective topological superconductor by placing strong spin orbit interacting metals with superconducting materials, aiming to produce Majorana zero modes useful for topologically protected quantum computations. In recent experiments high $T_c$ material $\text{Bi}_2\text{Sr}_2\text{CaCu}_2\text{O}_{8+δ}$ is put in contact with a few quintuple layer thick… ▽ More Proximity effect is used to generate effective topological superconductor by placing strong spin orbit interacting metals with superconducting materials, aiming to produce Majorana zero modes useful for topologically protected quantum computations. In recent experiments high $T_c$ material $\text{Bi}_2\text{Sr}_2\text{CaCu}_2\text{O}_{8+δ}$ is put in contact with a few quintuple layer thick $\text{Bi}_2\text{Se}_3$, and conflicting experimental results are reported. We use standard mean field approach to study this heterostructure, and find it is unlikely to have large proximity induced superconducting gap. The claimed observed s-wave gap might not be purely superconducting coherence gap despite its seemingly correct temperature dependence. Further study on the proximity induced bulk coherence gap and the band structure at the interface should shed light on this issue. △ Less

Submitted 14 January, 2016; v1 submitted 20 September, 2015; originally announced September 2015.

Comments: v4: Improvement in English; v.3: typos in Eq.6 of v.2 corrected; accepted by PRB

Journal ref: Phys. Rev. B 93, 035140 (2016)

Low-temperature, dry transfer-printing of a patterned graphene monolayer

Authors: Sugkyun Cha, Minjeong Cha, Seojun Lee, ** Hyoun Kang, Changsoon Kim

Abstract: Graphene has recently attracted much interest as a material for flexible, transparent electrodes or active layers in electronic and photonic devices. However, realization of such graphene-based devices is limited due to difficulties in obtaining patterned graphene monolayers on top of materials that are degraded when exposed to a high-temperature or wet process. We demonstrate a low-temperature, d… ▽ More Graphene has recently attracted much interest as a material for flexible, transparent electrodes or active layers in electronic and photonic devices. However, realization of such graphene-based devices is limited due to difficulties in obtaining patterned graphene monolayers on top of materials that are degraded when exposed to a high-temperature or wet process. We demonstrate a low-temperature, dry process capable of transfer-printing a patterned graphene monolayer grown on Cu foil onto a target substrate using an elastomeric stamp. A challenge in realizing this is to obtain a high-quality graphene layer on a hydrophobic stamp made of poly(dimethylsiloxane), which is overcome by introducing two crucial modifications to the conventional wet-transfer method - the use of a support layer composed of Au and the decrease in surface tension of the liquid bath. Using this technique, patterns of a graphene monolayer were transfer-printed on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate and MoO3 both of which are easily degraded when exposed to an aqueous or aggressive patterning process. We discuss the range of application of this technique, which is currently limited by oligomer contaminants, and possible means to expand it by eliminating the contamination problem. △ Less

Submitted 20 July, 2015; originally announced July 2015.

Tunneling between helical Majorana modes and helical Luttinger liquids

Authors: Sung-Po Chao, Thomas L. Schmidt, Chung-Hou Chung

Abstract: We propose and study the charge transport through single and double quantum point contacts setup between helical Majorana modes and an interacting helical Luttinger liquid. We show that the differential conductance decreases for stronger repulsive interactions and that the point contacts become insulating above a critical interaction strength. For a single point contact, the differential conductan… ▽ More We propose and study the charge transport through single and double quantum point contacts setup between helical Majorana modes and an interacting helical Luttinger liquid. We show that the differential conductance decreases for stronger repulsive interactions and that the point contacts become insulating above a critical interaction strength. For a single point contact, the differential conductance as a function of bias voltage shows a series of peaks due to Andreev reflection of electrons in the Majorana modes. In the case of two point contacts, interference phenomena make the structure of the individual resonance peaks less universal and show modulations with different separation distance between the contacts. For small separation distance the overall features remain similar to the case of a single point contact. △ Less

Submitted 1 June, 2015; v1 submitted 27 March, 2015; originally announced March 2015.

Comments: v.2: 14 pages, 11 figures; adding one figure, an appendix, and some minor changes

Journal ref: Phys. Rev. B 91, 235125 (2015)

Decoherence Patterns of Topological Qubits from Majorana Modes

Authors: Shih-Hao Ho, Sung-Po Chao, Chung-Hsien Chou, Feng-Li Lin

Abstract: We investigate the decoherence patterns of topological qubits in contact with the environment by a novel way of deriving the open system dynamics other than the Feynman-Vernon. Each topological qubit is made of two Majorana modes of a 1D Kitaev's chain. These two Majorana modes interact with the environment in an incoherent way which yields peculiar decoherence patterns of the topological qubit. M… ▽ More We investigate the decoherence patterns of topological qubits in contact with the environment by a novel way of deriving the open system dynamics other than the Feynman-Vernon. Each topological qubit is made of two Majorana modes of a 1D Kitaev's chain. These two Majorana modes interact with the environment in an incoherent way which yields peculiar decoherence patterns of the topological qubit. More specifically, we consider the open system dynamics of the topological qubits which are weakly coupled to the fermionic/bosonic Ohmic-like environments. We find atypical patterns of quantum decoherence. In contrast to the cases of non-topological qubits for which they always decohere completely in all Ohmic-like environments, the topological qubits decohere completely in the Ohmic and sub-Ohmic environments but not in the super-Ohmic ones. Moreover, we find that the fermion parities of the topological qubits though cannot prevent the qubit states from decoherence in the sub-Ohmic environments, can prevent from thermalization turning into Gibbs state. We also study the cases in which each Majorana mode can couple to different Ohmic-like environments and the time dependence of concurrence for two topological qubits. △ Less

Submitted 20 October, 2014; v1 submitted 24 June, 2014; originally announced June 2014.

Comments: 20 pages, 10 figures; v2 ref updated to match NJP version

Long-range interaction induced phases in Weyl semimetals

Authors: Huazhou Wei, Sung-Po Chao, Vivek Aji

Abstract: The interplay of spin orbit coupling and electron electron interaction condensing new phases of matter is an important new phenomena in solid state physics. In this paper we explore the nature of excitonic phases induced in Weyl semimetals by long range Coulomb repulsion. Its has been previously shown that short range repulsion leads to a ferromagnetic insulator while short range attraction result… ▽ More The interplay of spin orbit coupling and electron electron interaction condensing new phases of matter is an important new phenomena in solid state physics. In this paper we explore the nature of excitonic phases induced in Weyl semimetals by long range Coulomb repulsion. Its has been previously shown that short range repulsion leads to a ferromagnetic insulator while short range attraction results in a charge density wave state. Here we show the the charge density wave is the energetically favored state in the presence of long range repulsion. △ Less

Submitted 10 March, 2014; originally announced March 2014.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B. 89, 235109 (2014)

Kane-Mele Hubbard model on a zigzag ribbon: stability of the topological edge states and quantum phase transitions

Authors: Chung-Hou Chung, Der-Hau Lee, Sung-Po Chao

Abstract: We study the quantum phases and phase transitions of the Kane-Mele Hubbard (KMH) model on a zigzag ribbon of honeycomb lattice at a finite size via the weak-coupling renormalization group (RG) approach. In the non-interacting limit, the KM model is known to support topological edge states where electrons show helical property with orientations of the spin and momentum being locked. The effective i… ▽ More We study the quantum phases and phase transitions of the Kane-Mele Hubbard (KMH) model on a zigzag ribbon of honeycomb lattice at a finite size via the weak-coupling renormalization group (RG) approach. In the non-interacting limit, the KM model is known to support topological edge states where electrons show helical property with orientations of the spin and momentum being locked. The effective inter-edge hop** terms are generated due to finite-size effect. In the presence of an on-site Coulomb repulsive interaction and the inter-edge hop**s, special focus is put on the stability of the topological edge states (TI phase) in the KMH model against (i) the charge and spin gaped (II) phase, (ii) the charge gaped but spin gapless (IC) phase and (iii) the spin gaped but charge gapless (CI) phase depending on the number (even/odd) of the zigzag ribbons, do** level (electron filling factor) and the ratio of the Coulomb interaction to the inter-edge tunneling. We discuss different phase diagrams for even and odd numbers of zigzag ribbons. We find the TI-CI, II-IC, and II-CI quantum phase transitions are of the Kosterlitz-Thouless (KT) type. By computing various correlation functions, we further analyze the nature and leading instabilities of these phases. △ Less

Submitted 20 January, 2014; originally announced January 2014.

Comments: 14 pages, 17 figures

Journal ref: Phys. Rev. B 90, 035116 (2014)

Ultrafast zero balance of the oscillator-strength sum rule in graphene

Authors: Jaeseok Kim, Seong Chu Lim, Seung ** Chae, Inhee Maeng, Younghwan Choi, Soonyoung Cha, Young Hee Lee, Hyunyong Choi

Abstract: Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating th… ▽ More Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating this question due to the linear Dirac-like energy dispersion. Here, we employed both ultrafast terahertz and optical spectroscopy to directly monitor the transient oscillator-strength balancing between quasi-free low-energy oscillators and high-energy Fermi-edge ones. Upon photo-excitation of hot Dirac fermions, we observed that the ultrafast depletion of high-energy oscillators precisely complements the increased terahertz absorption oscillators. Our results may provide an experimental priori to understand, for example, the intrinsic free-carrier dynamics to the high-energy photo-excitation, responsible for optoelectronic operation such as graphene-based phototransistor or solar-energy harvesting devices. △ Less

Submitted 10 September, 2013; originally announced September 2013.

Ultrafast spin-resolved spectroscopy reveals dominant exciton dynamics in conducting polymer polyaniline

Authors: Soonyoung Cha, Yoochan Hong, Jaemoon Yang, Inhee Maeng, Seung Jae Oh, Kiyoung Jeong, **-Suck Suh, Seungjoo Haam, Yong-Min Huh, Hyunyong Choi

Abstract: The conducting polymer polyaniline (PANI) has a wide range of optoelectronic applications due to its unique electronic and optical characteristics. Although extensive works have been performed to understand the equilibrium properties, the nature of the charge type that governs its non-equilibrium optical response has been barely understood; a number of studies have debated the nature of photo-gene… ▽ More The conducting polymer polyaniline (PANI) has a wide range of optoelectronic applications due to its unique electronic and optical characteristics. Although extensive works have been performed to understand the equilibrium properties, the nature of the charge type that governs its non-equilibrium optical response has been barely understood; a number of studies have debated the nature of photo-generated charge type in PANI, specifically whether it is polaron or exciton based. Here, we report experimental evidence that the charge relaxation dynamics of PANI are dominated by excitons. Utilizing ultrafast spin-resolved pump-probe spectroscopy, we observed that PANI charge dynamics are strongly spin-polarized, exhibiting a spin Pauli-blocking effect. Investigations including both spin-independent and spindependent dynamics reveal that there is no spin-flip process involved in charge relaxation. This provides compelling evidence of an exciton-dominated photo-response in PANI. △ Less

Submitted 10 September, 2013; originally announced September 2013.

Odd parity superconductivity in Weyl semimetals

Authors: Huazhou Wei, Sung-Po Chao, Vivek Aji

Abstract: Unconventional superconducting states of matter are realized in the presence of strong spin orbit coupling. In particular, non degenerate bands can support odd parity superconductivity with rich topological content. Here we study whether this is the case for Weyl semimetals. These are systems whose low energy sector, in the absence of interactions, is described by linearly dispersing chiral fermio… ▽ More Unconventional superconducting states of matter are realized in the presence of strong spin orbit coupling. In particular, non degenerate bands can support odd parity superconductivity with rich topological content. Here we study whether this is the case for Weyl semimetals. These are systems whose low energy sector, in the absence of interactions, is described by linearly dispersing chiral fermions in three dimensions. The energy spectrum has nodes at an even number of points in the Brillouin zone. Consequently both intranodal finite momentum pairing and internodal BCS superconductivity are allowed. For local attractive interaction the finite momentum pairing state with chiral p-wave symmetry is found to be most favorable at finite chemical potential. The state is an analog of the superfluid $^{3}$He A phase, with cooper pairs having finite center of mass momentum. For chemical potential at the node the state is preempted by a fully gapped charge density wave. For long range attraction the BCS state wins out for all values of the chemical potential. △ Less

Submitted 30 May, 2013; originally announced May 2013.

Nonequilibrium transport of helical Luttinger liquids through a quantum dot

Authors: Sung-Po Chao, Salman A. Silotri, Chung-Hou Chung

Abstract: We study a steady state non-equilibrium transport between two interacting helical edge states of a two dimensional topological insulator, described by helical Luttinger liquids, through a quantum dot. For non-interacting dot the current is obtained analytically by including the self-energy correction to the dot Green's function. For interacting dot we use equation of motion method to study the inf… ▽ More We study a steady state non-equilibrium transport between two interacting helical edge states of a two dimensional topological insulator, described by helical Luttinger liquids, through a quantum dot. For non-interacting dot the current is obtained analytically by including the self-energy correction to the dot Green's function. For interacting dot we use equation of motion method to study the influence of weak on-site Coulomb interaction on the transport. We find the metal-to-insulator quantum phase transition for attractive or repulsive interactions in the leads when the magnitude of the interaction strength characterized by a charge sector Luttinger parameter $K$ goes beyond a critical value. The critical Luttinger parameter $K_{cr}$ depends on the ho** strength between dot and the leads as well as the energy level of the dot with respect to the Fermi levels of the leads, ranging from weak interaction regime for dot level off resonance to strong interaction regime for dot in resonance with the equilibrium Fermi level. Nearby the transition various singular behaviors of current noise, dot density of state, and the decoherence rate (inverse of lifetime) of the dot are briefly discussed. △ Less

Submitted 19 May, 2013; v1 submitted 12 May, 2013; originally announced May 2013.

Comments: 12 pages, 9 sets of figures; v.2 fig.5 corrected and reference added

Journal ref: Phys. Rev. B 88, 085109 (2013)

Evolution of the domain topology in a ferroelectric

Authors: S. C. Chae, Y. Horibe, D. Y. Jeong, N. Lee, K. Iida, M. Tanimura, S. -W. Cheong

Abstract: Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of… ▽ More Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of crystals with a self-poling tendency near surfaces reveal that the partial dislocation (i.e., wall-wall) interaction, not the interaction between vortices and antivortices, is primarily responsible for topological condensation through the macroscopic breaking of the Z2-symmetry. △ Less

Submitted 31 March, 2013; originally announced April 2013.

Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite

Authors: Myung-Geun Han, Yimei Zhu, Lijun Wu, Toshihiro Aoki, Vyacheslav Volkov, Xueyun Wang, Seung Chul Chae, Yoon Seok Oh, Sang-Wook Cheong

Abstract: Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite. Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite. △ Less

Submitted 14 March, 2013; originally announced March 2013.

Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor

Authors: Myong Chol Pak, Kwang-Il Kim, Hak Chol Pak, Chol Won Ri, Sang Jun Cha

Abstract: In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase g… ▽ More In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase gets lower and approaches to the equilibrium state. Additionally, the higher interface conductivity, the weaker spin injection efficiency, and the transmission due to Fermi energy of spin up and spin down is different from each other. In the same structure, the spin injection efficiency changes depending on the magnetic field, and the spin injection efficiency vibrates sensitively according to the magnetic field. In TI / DMS heterogeneous structure, the spin current changes according to magnetic field were investigated. Here, when the magnetic field is low, the spin current oscillates, and as the magnetic field increases, the vibration is attenuated. It also decreases with increasing temperature and weakens vibrations. This is due to the competitive effect of the chiral properties of Dirac type quasiparticles in the topological insulator and the unique properties of exchange interaction between electrons and ions in DMS. This result allows us to expect the possibility of spintronic devices with high sensitivity to magnetic field. △ Less

Submitted 27 November, 2020; v1 submitted 11 September, 2012; originally announced September 2012.

Comments: 11 pages, 4 figures

Excitonic Phases from Weyl Semi-Metals

Authors: Huazhou Wei, Sung-Po Chao, Vivek Aji

Abstract: Systems with strong spin-orbit coupling, which competes with other interactions and energy scales, offer a fertile playground to explore new correlated phases of matter. Weyl semimetals are an example where the phenomenon leads to a low energy effective theory in terms of massless linearly dispersing fermions in three dimensions. In the absence of interactions chirality is a conserved quantum numb… ▽ More Systems with strong spin-orbit coupling, which competes with other interactions and energy scales, offer a fertile playground to explore new correlated phases of matter. Weyl semimetals are an example where the phenomenon leads to a low energy effective theory in terms of massless linearly dispersing fermions in three dimensions. In the absence of interactions chirality is a conserved quantum number, protecting the semi-metallic physics against perturbations that are translationally invariant. In this letter we show that the interplay between interaction and topology yields a novel chiral excitonic insulator. The state is characterized by a complex vectorial order parameter leading to a gap** out of the Weyl nodes. A striking feature is that it is ferromagnetic, with the phase of the order parameter determining the direction of the induced magnetic moment. △ Less

Submitted 20 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 sets of figures

Journal ref: Phys. Rev. Lett. 109, 196403 (2012)

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

Authors: Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Pei Zhao, Aniruddha Konar, Huili, Xing, Alan Seabaugh, Debdeep Jena

Abstract: We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs sho… ▽ More We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices. △ Less

Submitted 2 April, 2012; originally announced April 2012.

Comments: 11 pages, 3 figures

Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs

Authors: S. C. Chae, N. Lee, Y. Horibe, M. Tanimura, S. Mori, B. Gao, S. Carr, S. -W. Cheong

Abstract: We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to… ▽ More We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to vortex-antivortex domain patterns through a freezing process when crystals cross Tc even though the phase transition appears not to be Kosterlitz-Thouless-type. The experimental systematics are compared with the results of our six-state clock model simulation and also the Kibble-Zurek Mechanism for trapped topological defects. △ Less

Submitted 23 March, 2012; originally announced March 2012.

Effect of inplane electric field on magnetotransport in helical metal

Authors: Huazhou Wei, Sung-Po Chao, Vivek Aji

Abstract: The existence of helical surface states in a bulk insulator, with anomalous magneto-electric properties, is a remarkable new development in solid state physics. The linear dispersion of the the fermions leads to a form of Lorentz invariance, with the Fermi velocity playing the role of the velocity of light ($c$). In a crossed electric and magnetic field the single particle states form Landau level… ▽ More The existence of helical surface states in a bulk insulator, with anomalous magneto-electric properties, is a remarkable new development in solid state physics. The linear dispersion of the the fermions leads to a form of Lorentz invariance, with the Fermi velocity playing the role of the velocity of light ($c$). In a crossed electric and magnetic field the single particle states form Landau levels whose energies can be changed by varying the applied \emph{in-plane electric} field. The degeneracy remains constant and is determined by the magnetic field. In the letter we study the nature of the mangeto-oscillation in conductivity and thermopower as a function of the \emph{in-plane electric} field. △ Less

Submitted 9 July, 2012; v1 submitted 9 January, 2012; originally announced January 2012.

Comments: 5 pages, version 2 is the published one with slight modifications

Journal ref: Phys. Rev. B. 86 (Rapid communication), 041403 (2012)

Electric and thermoelectric transport in graphene and helical metal in finite magnetic fields

Authors: Sung-Po Chao, Vivek Aji

Abstract: We study electrical and thermoelectric transport properties of the surface state of the topological insulator and graphene in the presence of randomly distributed impurities. For finite impurity strength, the dependence of the transport coefficients as a function of gate voltage, magnetic field and impurity potential, are obtained numerically. In the limit of zero impurities (clean limit), analyti… ▽ More We study electrical and thermoelectric transport properties of the surface state of the topological insulator and graphene in the presence of randomly distributed impurities. For finite impurity strength, the dependence of the transport coefficients as a function of gate voltage, magnetic field and impurity potential, are obtained numerically. In the limit of zero impurities (clean limit), analytic results for the peak values of the magneto-oscillations in thermopower are derived. Analogous with the conventional two dimensional electron gas, the peak values are universal in the clean limit. Unlike graphene, in topological insulators the coupling of the electron spin to its momentum leads to a dependence of the transport coefficients on the gyromagnetic ratio ($g$). We compare our results with data on graphene and identify unique signatures expected in topological insulators due to the magnetoelectric coupling. △ Less

Submitted 8 September, 2011; v1 submitted 26 May, 2011; originally announced May 2011.

Comments: 13 pages, 8 figures, significant rewriting in v2

Journal ref: Phys Rev B.84,155430 (2011)

Controlled Growth of ZnO Nanowire, Nanowall, and Hybrid Nanostructures on Graphene for Piezoelectric Nanogenerators

Authors: Brijesh Kumar, Keun Young Lee, Hyun-Kyu Park, Seung ** Chae, Young Hee Lee, Sang-Woo Kim

Abstract: Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer… ▽ More Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer flatness with π electrons. Here, we report that by using graphene directly as a substrate, vertically well-aligned ZnO nanowires and nanowalls were obtained systematically by controlling Au catalyst thickness and growth time, without invoking significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 oC. We further demonstrate a piezoelectric nanogenerator that was fabricated from the vertically aligned nanowire-nanowall ZnO hybrid/graphene structure generates a new type of direct current. △ Less

Submitted 1 February, 2011; originally announced February 2011.

Kondo and charge fluctuation resistivity due to Anderson impurities in graphene

Authors: Sung-Po Chao, Vivek Aji

Abstract: Motivated by experiments on ion irradiated graphene, we compute the resistivity of graphene with dilute impurities. In the local moment regime we employ the perturbation theory up to third order in the exchange coupling to determine the behavior at high temperatures within the Kondo model. Resistivity due to charge fluctuations is obtained within the mean field approach on the Anderson impurity mo… ▽ More Motivated by experiments on ion irradiated graphene, we compute the resistivity of graphene with dilute impurities. In the local moment regime we employ the perturbation theory up to third order in the exchange coupling to determine the behavior at high temperatures within the Kondo model. Resistivity due to charge fluctuations is obtained within the mean field approach on the Anderson impurity model. Due to the linear spectrum of the graphene the Kondo behavior is shown to depend on the gate voltage applied. The location of the impurity on the graphene sheet is an important variable determining its effect on the Kondo scale and resistivity. Our results show that for chemical potential nearby the node the charge fluctuations is responsible for the observed temperature dependence of resistivity while away from the node the spin fluctuations take over. Quantitative agreement with experimental data is achieved if the energy of the impurity level varies linearly with the chemical potential. △ Less

Submitted 8 September, 2011; v1 submitted 2 September, 2010; originally announced September 2010.

Comments: 17 pages, 15 figures, published version

Journal ref: Phys Rev B 83 165449 (2011)

Non-equilibrium Transport in the Anderson model of a biased Quantum Dot: Scattering Bethe Ansatz Phenomenology

Authors: Sung-Po Chao, Guillaume Palacios

Abstract: We derive the transport properties of a quantum dot subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz, a generalization of the traditional Thermodynamic Bethe Ansatz to open systems out of equilibrium, we derive exact results for the quantum dot occupation out of equilibrium and, by introducing phenomenological spin- and charge-fluctua… ▽ More We derive the transport properties of a quantum dot subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz, a generalization of the traditional Thermodynamic Bethe Ansatz to open systems out of equilibrium, we derive exact results for the quantum dot occupation out of equilibrium and, by introducing phenomenological spin- and charge-fluctuation distribution functions in the computation of the current, obtain the differential conductance for large U/Γ. The Hamiltonian to describe the quantum dot system is the Anderson impurity Hamiltonian and the current and dot occupation as a function of voltage are obtained numerically. We also vary the gate voltage and study the transition from the mixed valence to the Kondo regime in the presence of a non-equilibrium current. We conclude with the difficulty we encounter in this model and possible way to solve them without resorting to a phenomenological method. △ Less

Submitted 17 May, 2011; v1 submitted 28 March, 2010; originally announced March 2010.

Comments: 20 pages, 20 figures, published version

Journal ref: Phys Rev B83: 195314,2011

Large 1/f noise of unipolar resistance switching and its percolating nature

Authors: S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M. -J. Lee, T. W. Noh

Abstract: We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resist… ▽ More We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices. △ Less

Submitted 11 August, 2009; originally announced August 2009.

Comments: 15 pages, 3 figures