Self-assembling of multilayered polymorphs with ion beams
Authors:
Alexander Azarov,
Cristian Radu,
Augustinas Galeckas,
Ionel Florinel Mercioniu,
Adrian Cernescu,
Vishnukanthan Venkatachalapathy,
Edouard Monakhov,
Flyura Djurabekova,
Corneliu Ghica,
Junlei Zhao,
Andrej Kuznetsov
Abstract:
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallizatio…
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Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; e.g. opting for step-like changes of temperature and/or pressure correlated with switching from one polymorph to another during synthesis is tricky, since it may cause degradation of the structural quality. In the present work, applying the disorder-induced ordering approach we fabricated such multilayered polymorph structures using ion beams. We show that during ion irradiation of gallium oxide, the dynamic annealing of disorder may be tuned towards self-assembling of several polymorph interfaces, consistently with theoretical modelling. Specifically, we demonstrated multilayers with two polymorph interface repetitions obtained in one ion beam assisted fabrication step. Importantly, single crystal structure of the polymorphs was maintained in between interfaces exhibiting repeatable crystallographic relationships, correlating with optical cross-sectional maps. This data paves the way for enhancing functionalities in materials with not previously thought capabilities of ion beam technology.
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Submitted 30 April, 2024;
originally announced April 2024.
Nanoscale optical and structural characterisation of silk
Authors:
Meguya Ryu,
Reo Honda,
Adrian Cernescu,
Arturas Vailionis,
Armandas Balcytis,
Jitraporn Vongsvivut,
**g-Liang Li,
Denver P. Linklater,
Elena P. Ivanova,
Vygantas Mizeikis,
Mark J. Tobin,
Junko Morikawa,
Saulius Juodkazis
Abstract:
Background: Nanoscale composition of silk defining its unique properties via a hierarchical structural anisotropy has to be analysed at the highest spatial resolution of tens-of-nanometers corresponding to the size of fibrils made of b-sheets, which are the crystalline building blocks of silk. Results: Nanoscale optical and structural properties of silk have been measured from 100-nm thick longitu…
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Background: Nanoscale composition of silk defining its unique properties via a hierarchical structural anisotropy has to be analysed at the highest spatial resolution of tens-of-nanometers corresponding to the size of fibrils made of b-sheets, which are the crystalline building blocks of silk. Results: Nanoscale optical and structural properties of silk have been measured from 100-nm thick longitudinal slices of silk fibers with ~10 nm resolution, the highest so far. Optical sub-wavelength resolution in hyperspectral map** of absorbance and molecular orientation were carried out for comparison at IR wavelengths 2-10 micrometers using synchrotron radiation. Conclusion: Reliable distinction of transmission changes by only 1-2% due to anisotropy of amide bands was obtained from nano-thin slices of silk.
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Submitted 7 February, 2019;
originally announced February 2019.
