Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
Authors:
C. A. Paz de Araujo,
Jolanta Celinska,
Chris R. McWilliams,
Lucian Shifren,
Greg Yeric,
X. M. Henry Huang,
Saurabh Vinayak Suryavanshi,
Glen Rosendale,
Valeri Afanas'ev,
Eduardo C. Marino,
Dushyant Madhav Narayan,
Daniel S Dessau
Abstract:
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. O…
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Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory.
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Submitted 15 April, 2022;
originally announced April 2022.
A Local Mott Transition in NiO Resistance Random Access Memory
Authors:
Kan-Hao Xue,
Carlos A. Paz de Araujo,
Jolanta Celinska,
Christopher McWilliams
Abstract:
The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in details and it is shown that the Wannier functions in the definition of Hubbard U should not be replaced by atomic s-functions when it comes to the metallic side of the transition. The corresponding effective Hubbard U i…
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The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in details and it is shown that the Wannier functions in the definition of Hubbard U should not be replaced by atomic s-functions when it comes to the metallic side of the transition. The corresponding effective Hubbard U is subject to variations, which may also be understood by introducing an effective permittivity of the solid as an ansatz. Furthermore, the transition could be demonstrated in the Brinkman-Rice picture. Finally, the anodic characteristics of such transition show that it is a local Mott transition. Therefore, the unipolar switching NiO RRAM can still have asymmetric I-V curves when a cap** layer is inserted, which is explained qualitatively by quantum mechanics.
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Submitted 29 June, 2010;
originally announced June 2010.
