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Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Authors:
José M. Caridad,
Óscar Castelló,
Sofía M. López Baptista,
Takashi Taniguchi,
Kenji Watanabe,
Hartmut G. Roskos,
Juan A. Delgado-Notario
Abstract:
Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitatio…
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Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitation of constructive interference of plasma waves in such detectors not only promises frequency selectivity, but also a pronounced sensitivity enhancement at the target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been only revealed at cryogenic temperatures so far, and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room-temperature ultimately relies on the weak intrinsic electron-phonon scattering in graphene, which avoids the dam** of the plasma oscillations.
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Submitted 8 January, 2024;
originally announced January 2024.
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Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect
Authors:
Juan Salvador-Sánchez,
Luis M. Canonico,
Ana Pérez-Rodríguez,
Tarik P. Cysne,
Yuriko Baba,
Vito Clericò,
Marc Vila,
Daniel Vaquero,
Juan Antonio Delgado-Notario,
José M. Caridad,
Kenji Watanabe,
Takashi Taniguchi,
Rafael A. Molina,
Francisco Domínguez-Adame,
Stephan Roche,
Enrique Diez,
Tatiana G. Rappoport,
Mario Amado
Abstract:
Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for develo** orbitronics. Here, we report non-local transport mea…
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Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for develo** orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.
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Submitted 9 June, 2022;
originally announced June 2022.
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Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopy
Authors:
Patrick R. Whelan,
Qian Shen,
Binbin Zhou,
I. G. Serrano,
M. Venkata Kamalakar,
David M. A. Mackenzie,
Jie Ji,
De** Huang,
Haofei Shi,
Da Luo,
Meihui Wang,
Rodney S. Ruoff,
Antti-Pekka Jauho,
Peter U. Jepsen,
Peter Bøggild,
José M. Caridad
Abstract:
We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization νF^* of charge carriers in graphene. This allows the quantitative extraction of all electrical parameters (DC conductivity σDC, carrier density n, and carrier mobility μ) of large-scale graphene films placed on arbitrary substrates…
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We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization νF^* of charge carriers in graphene. This allows the quantitative extraction of all electrical parameters (DC conductivity σDC, carrier density n, and carrier mobility μ) of large-scale graphene films placed on arbitrary substrates via THz-TDS. Particularly relevant are substrates with low relative permittivity (< 5) such as polymeric films, where notable renormalization effects are observed even at relatively large carrier densities (> 10^12 cm-2, Fermi level > 0.1 eV). From an application point of view, the ability to rapidly and non-destructively quantify and map the electrical (σDC, n, μ) and electronic (νF^* ) properties of large-scale graphene on generic substrates is key to utilize this material in applications such as metrology, flexible electronics as well as to monitor graphene transfers using polymers as handling layers.
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Submitted 31 May, 2020;
originally announced June 2020.
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Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications
Authors:
Ferney A. Chaves,
David Jimenez,
Jaime E. Santos,
Peter Boggild,
Jose M. Caridad
Abstract:
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in l…
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Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity. In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials.
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Submitted 15 November, 2019;
originally announced November 2019.
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Gate electrostatics and quantum capacitance in ballistic graphene devices
Authors:
José M. Caridad,
Stephen R. Power,
Artsem A. Shylau,
Lene Gammelgaard,
Antti-Pekka Jauho,
Peter Bøggild
Abstract:
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene she…
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We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (< 1 nm roughness) are strongly influenced by the fringing electrostatic field at graphene boundaries, in quantitative agreement with theoretical calculations for pristine systems. Specifically, devices with low edge disorder present a large effective capacitance variation across the device channel with a nontrivial, inhomogeneous profile due not only to classical electrostatics but also to quantum mechanical effects. We show that such quantum capacitance contribution, occurring due to the low density of states (DOS) across the device in the presence of an external magnetic field, is considerably altered as a result of the gate electrostatics in the ballistic graphene device. Our conclusions can be extended to any two dimensional (2D) electronic system confined by a hard-wall potential and are important for understanding the electronic structure and device applications of conducting 2D materials.
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Submitted 1 May, 2019;
originally announced May 2019.
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A Two-dimensional Dirac fermion microscope
Authors:
Peter Bøggild,
Jose M. Caridad,
Christoph Stampfer,
Gaetano Galogero,
Nick Papior,
Mads Brandbyge
Abstract:
The electron microscope has been a powerful, highly versatile workhorse in the fields of material and surface science, micro and nanotechnology, biology and geology, for nearly 80 years. The advent of two-dimensional materials opens new possibilities for realising an analogy to electron microscopy in the solid state. Here we provide a perspective view on how a two-dimensional (2D) Dirac fermion-ba…
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The electron microscope has been a powerful, highly versatile workhorse in the fields of material and surface science, micro and nanotechnology, biology and geology, for nearly 80 years. The advent of two-dimensional materials opens new possibilities for realising an analogy to electron microscopy in the solid state. Here we provide a perspective view on how a two-dimensional (2D) Dirac fermion-based microscope can be realistically implemented and operated, using graphene as a vacuum chamber for ballistic electrons. We use semiclassical simulations to propose concrete architectures and design rules of 2D electron guns, deflectors, tunable lenses and various detectors. The simulations show how simple objects can be imaged with well-controlled and collimated in-plane beams consisting of relativistic charge carriers. Finally, we discuss the potential of such microscopes for investigating edges, terminations and defects, as well as interfaces, including external nanoscale structures such as adsorbed molecules, nanoparticles or quantum dots.
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Submitted 23 April, 2017;
originally announced April 2017.
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The hot pick-up technique for batch assembly of van der Waals heterostructures
Authors:
Filippo Pizzocchero,
Lene Gammelgaard,
Bjarke Sørensen Jessen,
José M. Caridad,
Lei Wang,
James Hone,
Peter Bøggild,
Timothy J. Booth
Abstract:
The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a…
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The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices we found semiclassical mean free paths up to 0.9 micrometer, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures.
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Submitted 8 May, 2016;
originally announced May 2016.
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Plateau insulator transition in graphene
Authors:
M. Amado,
E. Diez,
D. López-Romero,
F. Rossella,
J. M. Caridad,
F. Dionigi,
V. Bellani,
D. K. Maude
Abstract:
The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted u…
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The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.
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Submitted 30 March, 2010; v1 submitted 9 July, 2009;
originally announced July 2009.
