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Provoking topology by octahedral tilting in strained SrNbO$_3$
Authors:
Alla Chikina,
Victor Rosendal,
Hang Li,
Eduardo B. Guedes,
Marco Caputo,
Nicholas Clark Plumb,
Ming Shi,
Dirch Hjorth Petersen,
Mads Brandbyge,
Walber Hugo Brito,
Ekaterina Pomjakushina,
Valerio Scagnoli,
Jike Lyu,
Marisa Medarde,
Elizabeth Skoropata,
Urs Staub,
Shih-Wen Huang,
Felix Baumberger,
Nini Pryds,
Milan Radovic
Abstract:
Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattic…
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Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides.
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Submitted 10 November, 2023;
originally announced November 2023.
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Experimentally verified, fast analytic and numerical design of superconducting resonators in flip-chip architectures
Authors:
Hang-Xi Li,
Daryoush Shiri,
Sandoko Kosen,
Marcus Rommel,
Lert Chayanun,
Andreas Nylander,
Robert Rehammar,
Giovanna Tancredi,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Jonas Bylander
Abstract:
In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal map** techniques, to p…
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In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal map** techniques, to predict a resonator's parameters directly from its 2D cross-section, without computationally heavy and time-consuming 3D simulation. We demonstrate the method's validity by comparing the calculated resonator frequency and coupling quality factor with those obtained through 3D finite-element-method simulation and by measurement of 15 resonators in a flip-chip-integrated architecture. We achieve a discrepancy of less than 2% between designed and measured frequencies, for 6-GHz resonators. We also propose a design method that reduces the sensitivity of the resonant frequency to variations in the inter-chip spacing.
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Submitted 30 August, 2023; v1 submitted 9 May, 2023;
originally announced May 2023.
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Parallel spin-momentum locking in a chiral topological semimetal
Authors:
Jonas A. Krieger,
Samuel Stolz,
Inigo Robredo,
Kaustuv Manna,
Emily C. McFarlane,
Mihir Date,
Eduardo B. Guedes,
J. Hugo Dil,
Chandra Shekhar,
Horst Borrmann,
Qun Yang,
Mao Lin,
Vladimir N. Strocov,
Marco Caputo,
Banabir Pal,
Matthew D. Watson,
Timur K. Kim,
Cephise Cacho,
Federico Mazzola,
Jun Fujii,
Ivana Vobornik,
Stuart S. P. Parkin,
Barry Bradlyn,
Claudia Felser,
Maia G. Vergniory
, et al. (1 additional authors not shown)
Abstract:
Spin-momentum locking in solids describes a directional relationship between the electron's spin angular momentum and its linear momentum over the entire Fermi surface. While orthogonal spin-momentum locking, such as Rashba spin-orbit coupling, has been studied for decades and inspired a vast number of applications, its natural counterpart, the purely parallel spin-momentum locking, has remained e…
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Spin-momentum locking in solids describes a directional relationship between the electron's spin angular momentum and its linear momentum over the entire Fermi surface. While orthogonal spin-momentum locking, such as Rashba spin-orbit coupling, has been studied for decades and inspired a vast number of applications, its natural counterpart, the purely parallel spin-momentum locking, has remained elusive in experiments. Recently, chiral topological semimetals that host single- and multifold band crossings have been predicted to realize such parallel locking. Here, we use spin- and angle-resolved photoelectron spectroscopy to probe spin-momentum locking of a multifold fermion in the chiral topological semimetal PtGa via the spin-texture of its topological Fermi-arc surface states. We find that the electron spin of the Fermi-arcs points orthogonal to their Fermi surface contour for momenta close to the projection of the bulk multifold fermion, which is consistent with parallel spin-momentum locking of the latter. We anticipate that our discovery of parallel spin-momentum locking of multifold fermions will lead to the integration of chiral topological semimetals in novel spintronic devices, and the search for spin-dependent superconducting and magnetic instabilities in these materials.
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Submitted 15 October, 2022;
originally announced October 2022.
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Terahertz displacive excitation of a coherent Raman-active phonon in V$_2$O$_3$
Authors:
Flavio Giorgianni,
Mattia Udina,
Tommaso Cea,
Eugenio Paris,
Marco Caputo,
Milan Radovic,
Larissa Boie,
Joe Sakai,
Christof W. Schneider,
Steven Lee Johnson
Abstract:
Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a displacive force on the lattice at the difference-frequency mixing of a laser pulse excitation on the electronic system. Here, as a low-frequency counterpart of th…
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Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a displacive force on the lattice at the difference-frequency mixing of a laser pulse excitation on the electronic system. Here, as a low-frequency counterpart of this process, we demonstrate that coherent phonon excitations can be induced by the sum-frequency components of an intense terahertz light field, coupled to intraband electronic transitions. This nonlinear process leads to charge-coupled coherent dynamics of Raman-active phonon modes in the strongly correlated metal V$_2$O$_3$. Our results show a new up-conversion pathway for the optical control of Raman-active modes in solids mediated by terahertz-driven electronic excitation.
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Submitted 7 March, 2022;
originally announced March 2022.
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Metal to insulator transition at the surface of $V_2O_3$ thin films: an in-situ view
Authors:
Marco Caputo,
Jasmin Jandke,
Edoardo Cappelli,
Sandeep Kumar Chaluvadi,
Eduardo Bonini Guedes,
Muntaser Naamneh,
Giovanni Vinai,
Jun Fujii,
Piero Torelli,
Ivana Vobornik,
Andrea Goldoni,
Pasquale Orgiani,
Felix Baumberger,
Milan Radovic,
Giancarlo Panaccione
Abstract:
$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by mean of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk $V_2O_3…
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$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by mean of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk $V_2O_3$. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition (MIT) in $V_2O_3$ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of $V_2O_3$ thin films in device-oriented heterostructures.
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Submitted 16 June, 2021;
originally announced June 2021.
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Low-Temperature Insulating Phase of the Si(111)--7$\times$7 Surface
Authors:
S. Modesti,
P. M. Sheverdyaeva,
P. Moras,
C. Carbone,
M. Caputo,
M. Marsi,
E. Tosatti,
G. Profeta
Abstract:
We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductan…
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We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductance spectra instead show the opening of an energy gap at the Fermi level and a significant temperature dependence of the electronic properties, especially for the adatoms at the center of the unfaulted half of the unit cell. Complementary photoemission spectra with improved correction of the surface photovoltage shift corroborate the differential conductance data and demonstrate the absence of surface bands crossing the Fermi level at 17 K. These consistent experimental observations point to an insulating ground state and contradict the prediction of a metallic surface obtained by density functional theory in the generalized gradient approximation. The calculations indicate that this surface has or is near a magnetic instability, but remains metallic in the magnetic phases even including correlation effects at mean-field level. We discuss possible origins of the observed discrepancies between experiments and calculations.
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Submitted 19 April, 2021;
originally announced April 2021.
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Universal Structural Influence on the 2D Electron Gas at SrTiO$_3$ Surfaces
Authors:
Eduardo B. Guedes,
Stefan Muff,
Walber H. Brito,
Marco Caputo,
Nicholas C. Plumb,
J. Hugo Dil,
Milan Radović
Abstract:
The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to structural changes and surface modification must be understood in detail. Here, we present a study of the detailed electronic structure evolution of the 2DEG as…
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The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to structural changes and surface modification must be understood in detail. Here, we present a study of the detailed electronic structure evolution of the 2DEG as a function of sample temperature and surface step density. By comparing our experimental results with \textit{ab initio} calculations, we found that a SrO-rich surface layer is a prerequisite for electronic confinement. We also show that local structure relaxations cause a metal-insulator transition of the system around 135~K. Our study presents a new and simple way of tuning the 2DEG via surface vicinality and identifies how the operation of prospective devices will respond to changes in temperature.
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Submitted 12 February, 2021;
originally announced February 2021.
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Triple point fermions in ferroelectric GeTe
Authors:
Juraj Krempaský,
Laurent Nicolaï,
Martin Gmitra,
Houke Chen,
Mauro Fanciulli,
Eduardo B. Guedes,
Marco Caputo,
Milan Radović,
V. V. Volobuev,
Ondrej Caha,
Gunther Springholz,
Jan Minár,
J. Hugo Dil
Abstract:
Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory,…
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Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone. The rich manifold of effects opens up promising perspectives for studying non-trivial phenomena and multi-component fermions in condensed matter systems.
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Submitted 3 December, 2020;
originally announced December 2020.
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Strain-engineering of the charge and spin-orbital interactions in Sr2IrO4
Authors:
Eugenio Paris,
Yi Tseng,
Ekaterina M. Pärschke,
Wenliang Zhang,
Mary H. Upton,
Anna Efimenko,
Katharina Rolfs,
Daniel E. McNally,
Laura Maurel,
Muntaser Naamneh,
Marco Caputo,
Vladimir N. Strocov,
Zhiming Wang,
Diego Casa,
Christof W. Schneider,
Ekaterina Pomjakushina,
Krzysztof Wohlfeld,
Milan Radovic,
Thorsten Schmitt
Abstract:
In the high spin-orbit coupled Sr2IrO4, the high sensitivity of the ground state to the details of the local lattice structure shows a large potential for the manipulation of the functional properties by inducing local lattice distortions. We use epitaxial strain to modify the Ir-O bond geometry in Sr2IrO4 and perform momentum-dependent Resonant Inelastic X-ray Scattering (RIXS) at the metal and a…
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In the high spin-orbit coupled Sr2IrO4, the high sensitivity of the ground state to the details of the local lattice structure shows a large potential for the manipulation of the functional properties by inducing local lattice distortions. We use epitaxial strain to modify the Ir-O bond geometry in Sr2IrO4 and perform momentum-dependent Resonant Inelastic X-ray Scattering (RIXS) at the metal and at the ligand sites to unveil the response of the low energy elementary excitations. We observe that the pseudospin-wave dispersion for tensile-strained Sr2IrO4 films displays large softening along the [h,0] direction, while along the [h,h] direction it shows hardening. This evolution reveals a renormalization of the magnetic interactions caused by a strain-driven crossover from anisotropic to isotropic interactions between the magnetic moments. Moreover, we detect dispersive electron-hole pair excitations which shift to lower (higher) energies upon compressive (tensile) strain, manifesting a reduction (increase) in the size of the charge gap. This behavior shows an intimate coupling between charge excitations and lattice distortions in Sr2IrO4, originating from the modified hop** elements between the t2g orbitals. Our work highlights the central role played by the lattice degrees of freedom in determining both the pseudospin and charge excitations of Sr2IrO4 and provides valuable information towards the control of the ground state of complex oxides in the presence of high spin-orbit coupling.
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Submitted 25 September, 2020;
originally announced September 2020.
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Photoinduced renormalization of Dirac states in BaNiS$_2$
Authors:
Niloufar Nilforoushan,
Michele Casula,
Marco Caputo,
Evangelos Papalazarou,
Jonathan Caillaux,
Zhesheng Cheng,
Luca Perfetti,
Adriano Amaricci,
David Santos-Cottin,
Yannick Klein,
Andrea Gauzzi,
Marino Marsi
Abstract:
By means of pump-probe time- and angle-resolved photoelectron spectroscopy, we provide evidence of a sizeable reduction of the Fermi velocity of out-of-equilibrium Dirac bands in the quasi-two-dimensional semimetal BaNiS$_2$. First-principle calculations indicate that this band renormalization is ascribed to a change in non-local electron correlations driven by a photo-induced enhancement of scree…
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By means of pump-probe time- and angle-resolved photoelectron spectroscopy, we provide evidence of a sizeable reduction of the Fermi velocity of out-of-equilibrium Dirac bands in the quasi-two-dimensional semimetal BaNiS$_2$. First-principle calculations indicate that this band renormalization is ascribed to a change in non-local electron correlations driven by a photo-induced enhancement of screening properties. This effect is accompanied by a slowing down of the Dirac fermions and by a non-rigid shift of the bands at the center of the Brillouin zone. This result suggests that other similar electronic structure renormalizations may be photoinduced in other materials in presence of strong non-local correlations.
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Submitted 31 December, 2019;
originally announced December 2019.
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Band bending profile and band offset extraction at semiconductor-metal interfaces
Authors:
Sergej Schuwalow,
Niels B. M. Schroeter,
Jan Gukelberger,
Candice Thomas,
Vladimir Strocov,
John Gamble,
Alla Chikina,
Marco Caputo,
Jonas Krieger,
Geoffrey C. Gardner,
Matthias Troyer,
Gabriel Aeppli,
Michael J. Manfra,
Peter Krogstrup
Abstract:
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band…
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The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band alignment of buried semiconductor-metal interfaces using core level photoemission spectroscopy and self-consistent electronic structure simulations. As a proof of principle we apply the method to a clean in-situ grown InAs(100)/Al interface, a system with a strong in-built band bending. Due to the high signal-to-noise ratio of the core level spectra the proposed methodology can be used on previously inaccessible semiconductor-metal interfaces and support targeted design of novel hybrid devices and form the foundation for a interface parameter database for specified synthesis processes of semiconductor-metal systems.
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Submitted 7 October, 2019;
originally announced October 2019.
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Single spin-polarised Fermi surface in SrTiO$_3$ thin films
Authors:
Eduardo B. Guedes,
Stefan Muff,
Mauro Fanciulli,
Andrew P. Weber,
Marco Caputo,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radović,
J. Hugo Dil
Abstract:
The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growi…
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The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.
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Submitted 25 May, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Electronic phase separation at LaAlO3/SrTiO3 interfaces tunable by oxygen deficiency
Authors:
V. N. Strocov,
A. Chikina,
M. Caputo,
M. -A. Husanu,
F. Bisti,
D. Bracher,
T. Schmitt,
F. Miletto Granozio,
C. A. F. Vaz,
F. Lechermann
Abstract:
Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation all…
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Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation allow access to fundamental electronic structure characteristics (momentum-resolved spectral function, dispersions and ordering of energy bands, Fermi surface) of buried interfaces. Our experiment uses X-ray irradiation of the LAO/STO interface to tune its oxygen deficiency, building up a dichotomic system where mobile weakly correlated Ti t2g-electrons co-exist with localized strongly correlated Ti eg-ones. The ARPES spectra dynamics under X-ray irradiation shows a gradual intensity increase under constant Luttinger count of the Fermi surface. This fact identifies electronic phase separation (EPS) where the mobile electrons accumulate in conducting puddles with fixed electronic structure embedded in an insulating host phase, and allows us to estimate the lateral fraction of these puddles. We discuss the physics of EPS invoking a theoretical picture of oxygen-vacancy clustering, promoted by the magnetism of the localized Ti eg-electrons, and repelling of the mobile t2g-electrons from these clusters. Our results on the irradiation-tuned EPS elucidate the intrinsic one taking place at the stoichiometric LAO/STO interfaces.
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Submitted 17 August, 2019;
originally announced August 2019.
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Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}
Authors:
N. Nilforoushan,
M. Casula,
A. Amaricci,
M. Caputo,
J. Caillaux,
L. Khalil,
E. Papalazarou,
P. Simon,
L. Perfetti,
I. Vobornik,
P. K. Das,
J. Fujii,
A. Barinov,
D. Santos-Cottin,
Y. Klein,
M. Fabrizio,
A. Gauzzi,
M. Marsi
Abstract:
Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here…
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Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here we show that Dirac states can be effectively tuned by do** a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across its phase diagram, lead to the formation of Dirac lines whose position in k-space can be displaced along the Gamma M symmetry direction, and their form reshaped. Not only does the do** x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials by varying the strength of electron correlations.
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Submitted 27 November, 2021; v1 submitted 29 May, 2019;
originally announced May 2019.
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Artificial quantum confinement in LAO3/STO heterostructure
Authors:
Marco Caputo,
Margherita Boselli,
Alessio Filippetti,
Sebastien Lamal,
Danfeng Li,
Alla Chickina,
Claudia Cancellieri,
Thorsten Schmitt,
Jean-Marc Triscone,
Philippe Ghosez,
Stefano Gariglio,
Vladimir N. Strocov
Abstract:
Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation o…
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Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.
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Submitted 26 March, 2019;
originally announced March 2019.
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Do topology and ferromagnetism cooperate at the EuS/Bi$_2$Se$_3$ interface?
Authors:
J. A. Krieger,
Y. Ou,
M. Caputo,
A. Chikina,
M. Döbeli,
M. -A. Husanu,
I. Keren,
T. Prokscha,
A. Suter,
C. -Z. Chang,
J. S. Moodera,
V. N. Strocov,
Z. Salman
Abstract:
We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer…
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We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer and cause a complete depolarization of the muons. However, in both Bi$_2$Se$_3$ and titanium we measure similar local magnetic fields, implying that their origin is mostly independent of the topological properties of the interface electronic states. In addition, we use resonant soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) to probe the electronic band structure at the interface between EuS and Bi$_2$Se$_3$. By tuning the photon energy to the Eu anti-resonance at the Eu $M_5$ pre-edge we are able to detect the Bi$_2$Se$_3$ conduction band, through a protective Al$_2$O$_3$ cap** layer and the EuS layer. Moreover, we observe a signature of an interface-induced modification of the buried Bi$_2$Se$_3$ wave functions and/or the presence of interface states.
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Submitted 31 January, 2019;
originally announced January 2019.
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Three-dimensional Fermi surface of 2H-NbSe$_2$ - Implications for the mechanism of charge density waves
Authors:
F. Weber,
R. Hott,
R. Heid,
L. L. Lev,
M. Caputo,
T. Schmitt,
V. N. Strocov
Abstract:
We investigate the three-dimensional electronic structure of the seminal charge-density-wave (CDW) material 2H-NbSe$_2$ by soft x-ray angle-resolved photoelectron spectroscopy and density-functional theory. Our results reveal the pronounced 3D character of the electronic structure formed in the quasi-two-dimensional layered crystal structure. In particular, we find a strong dispersion along $k_z$…
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We investigate the three-dimensional electronic structure of the seminal charge-density-wave (CDW) material 2H-NbSe$_2$ by soft x-ray angle-resolved photoelectron spectroscopy and density-functional theory. Our results reveal the pronounced 3D character of the electronic structure formed in the quasi-two-dimensional layered crystal structure. In particular, we find a strong dispersion along $k_z$ excluding a nesting-driven CDW formation based on experimental data. The 3D-like band structure of 2H-NbSe$_2$ has strong implications for the intriguing phase competition of CDW order with superconductivity.
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Submitted 23 July, 2018;
originally announced July 2018.
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Observation of bulk nodal lines in topological semimetal ZrSiS
Authors:
Binbin Fu,
Changjiang Yi,
Tiantian Zhang,
Marco Caputo,
Junzhang Ma,
Xin Gao,
Baiqing Lv,
Lingyuan Kong,
Yaobo Huang,
Ming Shi,
Strokov Vladimir,
Chen Fang,
Hongming Weng,
Youguo Shi,
Tian Qian,
Hong Ding
Abstract:
ZrSiS is the most intensively studied topological nodal-line semimetal candidate, which is proposed to host multiple nodal lines in its bulk electronic structure. However, previous angle-resolved photoemission spectroscopy (ARPES) experiments with vacuum ultraviolet lights mainly probed the surface states. Here using bulk-sensitive soft X-ray ARPES, we acquire the bulk electronic states of ZrSiS w…
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ZrSiS is the most intensively studied topological nodal-line semimetal candidate, which is proposed to host multiple nodal lines in its bulk electronic structure. However, previous angle-resolved photoemission spectroscopy (ARPES) experiments with vacuum ultraviolet lights mainly probed the surface states. Here using bulk-sensitive soft X-ray ARPES, we acquire the bulk electronic states of ZrSiS without any interference from surface states. Our results clearly show two groups of three-dimensional bulk nodal lines located on high-symmetry planes and along high-symmetry lines in the bulk Brillouin zone, respectively. The nodal lines on high-symmetry planes are enforced to pin at the Fermi level by carrier compensation and constitute the whole Fermi surfaces. This means that the carriers in ZrSiS are entirely contributed by nodal-line fermions, suggesting that ZrSiS is a remarkable platform for studying physical properties related to nodal lines.
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Submitted 3 December, 2017;
originally announced December 2017.
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Electron-hole balanced dynamics in the type-II Weyl semimetal candidate WTe2
Authors:
M. Caputo,
L. Khalil,
E. Papalazarou,
N. Nilforoushan,
L. Perfetti,
Q. D. Gibson,
R. J. Cava,
M. Marsi
Abstract:
We present a time- and angular-resolved photoemission (TR-ARPES) study of the transition- metal dichalcogenide WTe2, a candidate type II Weyl semimetal exhibiting extremely large magne- toresistence. Using femtosecond light pulses, we characterize the unoccupied states of the electron pockets above the Fermi level. We track the relaxation dynamics of photoexcited electrons along the unoccupied ban…
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We present a time- and angular-resolved photoemission (TR-ARPES) study of the transition- metal dichalcogenide WTe2, a candidate type II Weyl semimetal exhibiting extremely large magne- toresistence. Using femtosecond light pulses, we characterize the unoccupied states of the electron pockets above the Fermi level. We track the relaxation dynamics of photoexcited electrons along the unoccupied band structure and into a bulk hole pocket. Following the ultrafast carrier relaxation, we report remarkably similar decay dynamics for electrons and holes. Our results corroborate the hypothesis that carrier compensation is a key factor in the exceptional magnetotransport properties of WTe2.
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Submitted 14 November, 2017;
originally announced November 2017.
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Time resolved photoemission of Sr$_2$IrO$_4$
Authors:
C. Piovera,
V. Brouet,
E. Papalazarou,
M. Caputo,
M. Marsi,
A. Taleb-Ibrahimi,
B. J. Kim,
L. Perfetti
Abstract:
We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than…
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We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than $70$ fs. The subsequent cooling of low energy excitations takes place in two step: a rapid dynamics of $\cong120$ fs is followed by a slower decay of $\cong 1$ ps. The reported timescales endorse the analogies between Sr$_2$IrO$_4$ and copper oxides.
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Submitted 10 July, 2016; v1 submitted 15 March, 2016;
originally announced March 2016.
