Showing 1–50 of 89 results for author: Cao, T

Uniaxial plasmon polaritons $\textit{via}$ charge transfer at the graphene/CrSBr interface

Authors: Daniel J. Rizzo, Eric Seewald, Fangzhou Zhao, Jordan Cox, Kaichen Xie, Rocco A. Vitalone, Francesco L. Ruta, Daniel G. Chica, Yinming Shao, Sara Shabani, Evan J. Telford, Matthew C. Strasbourg, Thomas P. Darlington, Suheng Xu, Siyuan Qiu, Aravind Devarakonda, Takashi Taniguchi, Kenji Watanabe, Xiaoyang Zhu, P. James Schuck, Cory R. Dean, Xavier Roy, Andrew J. Millis, Ting Cao, Angel Rubio , et al. (2 additional authors not shown)

Abstract: Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a pla… ▽ More Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a platform for polaritonic lensing and canalization. Here, we present the graphene/CrSBr heterostructure as an engineered 2D interface that hosts highly anisotropic SPP propagation over a wide range of frequencies in the mid-infrared and terahertz. Using a combination of scanning tunneling microscopy (STM), scattering-type scanning near-field optical microscopy (s-SNOM), and first-principles calculations, we demonstrate mutual do** in excess of 10$^{13}$ cm$^{-2}$ holes/electrons between the interfacial layers of graphene/CrSBr heterostructures. SPPs in graphene activated by charge transfer interact with charge-induced anisotropic intra- and interband transitions in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic transport and propagation lengths that differ by an order-of-magnitude between the two in-plane crystallographic axes of CrSBr. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Xiao-Wei Zhang, Xiaoyu Liu, William Holtzmann, Weijie Li, Chong Wang, Chaowei Hu, Yuzhou Zhao, Takashi Taniguchi, Kenji Watanabe, Jihui Yang, David Cobden, Jiun-Haw Chu, Nicolas Regnault, B. Andrei Bernevig, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abe… ▽ More The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abelian anyons, one route is to engineer higher flat Chern bands that mimic higher LLs. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayer (tMoTe2). Around filling factor v = -3, i.e., half-filling of the second miniband, we uncover spontaneous ferromagnetism and an incipient Chern insulator state. By measuring the anomalous Hall effect as a function of twist angle, we find that the Chern numbers (C) of the top two moiré flat bands have opposite sign (C = -+1) at twist angles above 3.1° but the same sign (C = -1) around 2.6°. This observation is consistent with the recently predicted twist-angle dependent band topology, resulting from the competition between moiré ferroelectricity and piezoelectricity. As we increase the magnetic field, only the small twist-angle device (2.6°) experiences a topological phase transition with an emergent C = -2 state. This is attributed to a Zeeman field-induced band crossing between opposite valleys, with the determined C = -1 for the top two bands. Our results lay a firm foundation for understanding the higher flat Chern bands, which is essential for the prediction or discovery of non-Abelian FCIs. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10

Authors: X. Du, Y. D. Li, Y. T. Cao, C. Y. Pei, M. X. Zhang, W. X. Zhao, K. Y. Zhai, R. Z. Xu, Z. K. Liu, Z. W. Li, J. K. Zhao, G. Li, Y. L. Chen, Y. P. Qi, H. J. Guo, L. X. Yang

Abstract: The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular… ▽ More The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

Authors: Ellis Thompson, Keng Tou Chu, Florie Mesple, Xiao-Wei Zhang, Chaowei Hu, Yuzhou Zhao, Heonjoon Park, Jiaqi Cai, Eric Anderson, Kenji Watanabe, Takashi Taniguchi, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav… ▽ More In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, Extended Data, 9 figures, Supplementary Information, 8 pages, 5 figures

Gauge theory of giant phonon magnetic moment in doped Dirac semimetals

Authors: Wenqin Chen, Xiao-Wei Zhang, Ying Su, Ting Cao, Di Xiao, Shi-Zeng Lin

Abstract: We present a quantum theory of phonon magnetic moment in doped Dirac semimetals. Our theory is based on an emergent gauge field approach to the electron-phonon coupling, applicable to both gapless and gapped systems. We find that the magnetic moment is directly proportional to the electrical Hall conductivity through the phonon Hall viscosity. Our theory is combined with the first-principles calcu… ▽ More We present a quantum theory of phonon magnetic moment in doped Dirac semimetals. Our theory is based on an emergent gauge field approach to the electron-phonon coupling, applicable to both gapless and gapped systems. We find that the magnetic moment is directly proportional to the electrical Hall conductivity through the phonon Hall viscosity. Our theory is combined with the first-principles calculations, allowing us to quantitatively implement it to realistic materials. Magnetic moments are found to be on the order of Bohr magneton for certain phonon modes in graphene and $\text{Cd}_3 \text{As}_2$. Our results provide practical guidance for the dynamical generation of large magnetization in the topological quantum materials. △ Less

Submitted 20 May, 2024; v1 submitted 16 May, 2024; originally announced May 2024.

Comments: 7 pages, 3 figures, supplemental materials included

Higher Landau-Level Analogues and Signatures of Non-Abelian States in Twisted Bilayer MoTe$_2$

Authors: Chong Wang, Xiao-Wei Zhang, Xiaoyu Liu, Jie Wang, Ting Cao, Di Xiao

Abstract: Recent experimental discovery of fractional Chern insulators at zero magnetic field in moiré superlattices has sparked intense interests in bringing Landau level physics to flat Chern bands. In twisted MoTe$_2$ bilayers (tMoTe$_2$), recent theoretical and experimental studies have found three consecutive flat Chern bands at twist angle $\sim 2^\circ$. In this work, we investigate whether higher La… ▽ More Recent experimental discovery of fractional Chern insulators at zero magnetic field in moiré superlattices has sparked intense interests in bringing Landau level physics to flat Chern bands. In twisted MoTe$_2$ bilayers (tMoTe$_2$), recent theoretical and experimental studies have found three consecutive flat Chern bands at twist angle $\sim 2^\circ$. In this work, we investigate whether higher Landau level physics can be found in these consecutive Chern bands. At twist angles $2.00^\circ$ and $1.89^\circ$, we identify four consecutive $C = 1$ bands for the $K$ valley in tMoTe$_2$. By constructing Wannier functions directly from density functional theory (DFT) calculations, a six-orbital model is developed to describe the consecutive Chern bands, with the orbitals forming a honeycomb lattice. Exact diagonalization on top of Hartree-Fock calculations are carried out with the Wannier functions. Especially, when the second moiré miniband is half-filled, signatures of non-Abelian states are found. Our Wannier-based approach in modelling moiré superlattices is faithful to DFT wave functions and can serve as benchmarks for continuum models. The possibility of realizing non-Abelian anyons at zero magnetic field also opens up a new pathway for fault-tolerant quantum information processing. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Proximity-Induced Exchange Interaction: a New Pathway for Quantum Sensing using Spin Centers in Hexagonal Boron Nitride

Authors: Lingnan Shen, Di Xiao, Ting Cao

Abstract: Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close proximity to target material, providing advantages over their 3D counterparts, such as nitrogen-vacancy (NV) center in diamond. Here we propose a novel quantum sen… ▽ More Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close proximity to target material, providing advantages over their 3D counterparts, such as nitrogen-vacancy (NV) center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between spin center in hBN and the underlying magnetic substrate induced by magnetic proximity effect. By first-principle calculation, we demonstrate the induced exchange interaction dominates over dipole-dipole interaction by orders of magnitude when in proximity. The interaction remains antiferromagnetic across all stacking configuration between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Ultrafast Dynamics of Bilayer and Trilayer Nickelate Superconductors

Authors: Y. D. Li, Y. T. Cao, L. Y. Liu, P. Peng, H. Lin, C. Y. Pei, M. X. Zhang, H. Wu, X. Du, W. X. Zhao, K. Y. Zhai, J. K. Zhao, M. -L. Lin, P. H. Tan, Y. P. Qi, G. Li, H. J. Guo, Luyi Yang, L. X. Yang

Abstract: In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ult… ▽ More In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ultrafast dynamics of the bilayer and trilayer nickelates at ambient pressure. Firstly, we observe a coherent phonon mode in La4Ni3O10 involving the collective vibration of La, Ni, and O atoms, which is absent in La3Ni2O7. Secondly, the temperature-dependent relaxation time diverges near the density-wave transition temperature of La4Ni3O10, in drastic contrast to kink-like changes in La3Ni2O7. Moreover, we estimate the electron-phonon coupling constants to be 0.05~0.07 and 0.12~0.16 for La3Ni2O7 and La4Ni3O10, respectively, suggesting a relatively minor role of electron-phonon coupling in the electronic properties of Lan+1NinO3n+1. Our work not only sheds light on the relevant microscopic interaction but also establishes a foundation for further studying the interplay between superconductivity and density-wave transitions in nickelate superconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Interlayer ferroelectric polarization modulated anomalous Hall effects in four-layer MnBi2Te4 antiferromagnets

Authors: Ziyu Niu, Xiang-Long Yu, Dingfu Shao, Xixiang **g, Defeng Hou, Xuhong Li, **g Sun, Junqin Shi, Xiaoli Fan, Tengfei Cao

Abstract: Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic and transport properties of 2D materials. Four-layer antiferromagnetic MnBi2Te4 (F-MBT) of… ▽ More Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic and transport properties of 2D materials. Four-layer antiferromagnetic MnBi2Te4 (F-MBT) offers an excellent platform to explore ferroelectric polarization effects on magnetic order and topological transport properties of nanomaterials. Here, by applying symmetry analyses and density-functional-theory calculations, the ferroelectric interface effects on magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the F-MBT are analyzed. Interlayer ferroelectric polarization in F-MBT efficiently violates the PT symmetry (the combination symmetry of central inversion (P) and time reverse (T) of the F-MBT by conferring magnetoelectric couplings, and stabilizes a specific antiferromagnetic order encompassing a ferromagnetic interface in the F-MBT. We predict that engineering an interlayer polarization in the top or bottom interface of F-MBT allows converting F-MBT from a trivial insulator to a Chern insulator. The switching of ferroelectric polarization at the middle interfaces results in a direction reversal of the quantum anomalous Hall current. Additionally, the interlayer polarization of the top and bottom interfaces can be aligned in the same direction, and the switching of polarization direction also reverses the direction of anomalous Hall currents. Overall, our work highlights the occurrence of quantum-transport phenomena in 2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are absent in the bulk or thin-film in bulk-like stacking forms of MnBi2Te4. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Polarization-driven band topology evolution in twisted MoTe$_2$ and WSe$_2$

Authors: Xiao-Wei Zhang, Chong Wang, Xiaoyu Liu, Yueyao Fan, Ting Cao, Di Xiao

Abstract: Motivated by recent experimental observations of opposite Chern numbers in $R$-type twisted MoTe$_2$ and WSe$_2$ homobilayers, we perform large-scale density-functional-theory (DFT) calculations with machine learning force fields to investigate moiré band topology from large to small twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a functio… ▽ More Motivated by recent experimental observations of opposite Chern numbers in $R$-type twisted MoTe$_2$ and WSe$_2$ homobilayers, we perform large-scale density-functional-theory (DFT) calculations with machine learning force fields to investigate moiré band topology from large to small twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a function of twist angle, and this change is driven by the competition between moiré ferroelectricity and piezoelectricity. Our large-scale calculations, enabled by machine learning methods, reveal crucial insights into interactions across different scales in twisted bilayer systems. The interplay between atomic-level relaxation effects and moiré-scale electrostatic potential variation opens new avenues for the design of intertwined topological and correlated states, including the possibility of mimicking higher Landau-level physics in the absence of a magnetic field. △ Less

Submitted 27 March, 2024; v1 submitted 21 November, 2023; originally announced November 2023.

Comments: 8 pages, 5 figures

Journal ref: Nature Communications 15, 4223 (2024)

Observation of flat and weakly dispersing bands in a van der Waals semiconductor Nb3Br8 with breathing kagome lattice

Authors: Sabin Regmi, Anup Pradhan Sakhya, Tharindu Fernando, Yuzhou Zhao, Dylan Jeff, Milo Sprague, Favian Gonzalez, Iftakhar Bin Elius, Mazharul Islam Mondal, Nathan Valadez, Damani Jarrett, Alexis Agosto, Jihui Yang, Jiun-Haw Chu, Saiful I. Khondaker, Xiaodong Xu, Ting Cao, Madhab Neupane

Abstract: Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are… ▽ More Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are well explained by the theoretical calculations, which show they have Nb d character indicating their origination from the Nb atoms forming the breathing kagome plane. This van der Waals material can be easily thinned down via mechanical exfoliation to the ultrathin limit and such ultrathin samples are stable as depicted from the time-dependent Raman spectroscopy measurements at room temperature. These results demonstrate that Nb3Br8 is an excellent material not only for studying breathing kagome induced flat band physics and its connection with magnetism, but also for heterostructure fabrication for application purposes. △ Less

Submitted 9 September, 2023; originally announced September 2023.

Comments: 24 pages, 12 figures, Supplemental Material included

Journal ref: Phys. Rev. B 108, L121404 (2023)

Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides

Authors: Xiaoyu Liu, Chong Wang, Xiao-Wei Zhang, Ting Cao, Di Xiao

Abstract: A series of recent experimental works on twisted MoTe$_2$ homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole do** of $ν= -1$, and the fractional quantum anomalous Hall effect is observed at $ν= -2/3$ and $ν= -3/5$. In this work, we investigate the electronic properties of AA-stacked twisted bilayer… ▽ More A series of recent experimental works on twisted MoTe$_2$ homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole do** of $ν= -1$, and the fractional quantum anomalous Hall effect is observed at $ν= -2/3$ and $ν= -3/5$. In this work, we investigate the electronic properties of AA-stacked twisted bilayer MoTe$_2$ at $ν=-2$ by $k$-space Hartree-Fock calculations. We find that the phase diagram is qualitatively similar to the phase diagram of a Kane-Mele-Hubbard with staggered onsite potential. A noteworthy phase within the diagram is the antiferromagnetic Chern insulator, stabilized by the external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. We highlight that the antiferromagnetic Chern insulator phase is most evident at a twist angle of approximately $4^\circ$. Our research proposes the potential of realizing a Chern insulator beyond $ν=-1$, and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices. △ Less

Submitted 14 August, 2023; originally announced August 2023.

Observation of Fractionally Quantized Anomalous Hall Effect

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Yinong Zhang, Jiayi Zhu, Xiaoyu Liu, Chong Wang, William Holtzmann, Chaowei Hu, Zhaoyu Liu, Takashi Taniguchi, Kenji Watanabe, Jiun-haw Chu, Ting Cao, Liang Fu, Wang Yao, Cui-Zu Chang, David Cobden, Di Xiao, Xiaodong Xu

Abstract: The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma… ▽ More The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 15 pages, 4 figures for main text. 8 extended data figures

Journal ref: Nature (2023)

A Quantized Interband Topological Index in Two-Dimensional Systems

Authors: Tharindu Fernando, Ting Cao

Abstract: We introduce a novel gauge-invariant, quantized interband index in two-dimensional (2D) multiband systems. It provides a bulk topological classification of a submanifold of parameter space (e.g., an electron valley in a Brillouin zone), and therefore overcomes difficulties in characterizing topology of submanifolds. We confirm its topological nature by numerically demonstrating a one-to-one corres… ▽ More We introduce a novel gauge-invariant, quantized interband index in two-dimensional (2D) multiband systems. It provides a bulk topological classification of a submanifold of parameter space (e.g., an electron valley in a Brillouin zone), and therefore overcomes difficulties in characterizing topology of submanifolds. We confirm its topological nature by numerically demonstrating a one-to-one correspondence to the valley Chern number in $k\cdot p$ models (e.g., gapped Dirac fermion model), and the first Chern number in lattice models (e.g., Haldane model). Furthermore, we derive a band-resolved topological charge and demonstrate that it can be used to investigate the nature of edge states due to band inversion in valley systems like multilayer graphene. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Comments: 6 pages and 3 figures in main text, 2 pages in supplementary material

Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8

Authors: Dylan A. Jeff, Favian Gonzalez, Kamal Harrison, Yuzhou Zhao, Tharindu Fernando, Sabin Regmi, Zhaoyu Liu, Humberto R. Gutierrez, Madhab Neupane, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Saiful I. Khondaker

Abstract: Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is… ▽ More Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications. △ Less

Submitted 25 October, 2023; v1 submitted 20 June, 2023; originally announced June 2023.

Comments: 18 pages, 8 figures, 1 table

Journal ref: 2D Mater. 10 045030 (2023)

Three consecutive quantum anomalous Hall gaps in a metal-organic network

Authors: Xiang-Long Yu, Tengfei Cao, Rui Wang, Ya-Min Quan, Jiansheng Wu

Abstract: In the quantum anomalous Hall (QAH) effect, chiral edge states are present in the absence of magnetic fields due to the intrinsic band topology. In this work, we predict that a synthesized two-dimensional metal-organic material, a Fe(biphenolate)$_3$ network, can be a unique QAH insulator, in which there are three consecutive nontrivial bandgaps. Based on first-principles calculations with effecti… ▽ More In the quantum anomalous Hall (QAH) effect, chiral edge states are present in the absence of magnetic fields due to the intrinsic band topology. In this work, we predict that a synthesized two-dimensional metal-organic material, a Fe(biphenolate)$_3$ network, can be a unique QAH insulator, in which there are three consecutive nontrivial bandgaps. Based on first-principles calculations with effective model analysis, we reveal such nontrivial topology is from the $3$d$_{xz}$ and $3$d$_{yz}$ orbitals of Fe atoms. Moreover, we further study the effect of substrates, and the results shows that the metallic substrates used in the experiments (Ag and Cu) are unfavorable for observing the QAH effect whereas a hexagonal boron nitride substrate with a large bandgap may be a good candidate, where the three consecutive QAH gaps appear inside the substrate gap. The presence of three consecutive bandgaps near the Fermi level will significantly facilitate observations of the QAH effect in experiments. △ Less

Submitted 7 June, 2023; originally announced June 2023.

Fractional Chern Insulator in Twisted Bilayer MoTe$_2$

Authors: Chong Wang, Xiao-Wei Zhang, Xiaoyu Liu, Yuchi He, Xiaodong Xu, Ying Ran, Ting Cao, Di Xiao

Abstract: A recent experiment has reported the first observation of a zero-field fractional Chern insulator (FCI) phase in twisted bilayer MoTe$_2$ moiré superlattices [Nature 622, 63-68 (2023)]. The experimental observation is at an unexpected large twist angle 3.7$^\circ$ and calls for a better understanding of the FCI in real materials. In this work, we perform large-scale density functional theory calcu… ▽ More A recent experiment has reported the first observation of a zero-field fractional Chern insulator (FCI) phase in twisted bilayer MoTe$_2$ moiré superlattices [Nature 622, 63-68 (2023)]. The experimental observation is at an unexpected large twist angle 3.7$^\circ$ and calls for a better understanding of the FCI in real materials. In this work, we perform large-scale density functional theory calculation for the twisted bilayer MoTe$_2$, and find that lattice reconstruction is crucial for the appearance of an isolated flat Chern band. The existence of the FCI state at $ν= -2/3$ are confirmed by exact diagonalization. We establish phase diagrams with respect to the twist angle and electron interaction, which reveal an optimal twist angle of $3.5^\circ$ for the observation of FCI. We further demonstrate that an external electric field can destroy the FCI state by changing band geometry and show evidence of the $ν=-3/5$ FCI state in this system. Our research highlights the importance of accurate single particle band structure in the quest for strong correlated electronic states and provides insights into engineering fractional Chern insulator in moiré superlattices. △ Less

Submitted 9 November, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Gate-tunable phonon magnetic moment in bilayer graphene

Authors: Xiao-Wei Zhang, Yafei Ren, Chong Wang, Ting Cao, Di Xiao

Abstract: We develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phono… ▽ More We develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phonon magnetic moments. Furthermore, the magnetic moment is highly tunable by changing the gate voltage. Our results firmly establish the necessity of the quantum mechanical treatment, and identify small-gap covalent materials as a promising platform for studying tunable phonon magnetic moment. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 130, 226302 (2023)

Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer

Authors: Jiaqi Cai, Eric Anderson, Chong Wang, Xiaowei Zhang, Xiaoyu Liu, William Holtzmann, Yinong Zhang, Fengren Fan, Takashi Taniguchi, Kenji Watanabe, Ying Ran, Ting Cao, Liang Fu, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic fiel… ▽ More The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons - crucial building blocks for topological quantum computation. Flat Chern bands are widely considered as a desirable venue to realize the FQAH state. For this purpose, twisted transition metal dichalcogenide homobilayers in rhombohedral stacking have recently been predicted to be a promising material platform. Here, we report experimental signatures of FQAH states in 3.7-degree twisted MoTe2 bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole filled moiré minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram which shows linear shifts in carrier densities corresponding to the v=-2/3 and -3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of -2/3$e^2/h$ and -3/5$e^2/h$, respectively. Moreover, the v=-1 state exhibits a dispersion corresponding to Chern number -1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron do** side do not disperse, i.e., are trivial correlated insulators. The observed topological states can be further electrically driven into topologically trivial states. Our findings provide clear evidence of the long-sought FQAH states, putting forward MoTe2 moiré superlattices as a fascinating platform for exploring fractional excitations. △ Less

Submitted 18 April, 2023; v1 submitted 17 April, 2023; originally announced April 2023.

Comments: 15 pages, 4 figures, v2: extended data (6 figures) is added. Comments are welcome

Journal ref: Nature (2023)

Kekulé Moiré Superlattices

Authors: Yusen Ye, Jimin Qian, Xiao-Wei Zhang, Chong Wang, Di Xiao, Ting Cao

Abstract: Moiré superlattices from stacks of van der Waals materials offer an exciting arena in the fields of condensed matter physics and materials science. Typically, these moiré superlattices consist of materials with identical or similar structures, and the long moiré period arises from a small twist angle or lattice mismatch. In this article, we discuss that long moiré period appears in a new moiré sys… ▽ More Moiré superlattices from stacks of van der Waals materials offer an exciting arena in the fields of condensed matter physics and materials science. Typically, these moiré superlattices consist of materials with identical or similar structures, and the long moiré period arises from a small twist angle or lattice mismatch. In this article, we discuss that long moiré period appears in a new moiré system by stacking two dissimilar van der Waals layers with large lattice mismatch, resulting in couplings between moiré bands from remote valleys in the momentum space. In this system, the first layer is reconstructed using a $\sqrt{3}$ by $\sqrt{3}$ supercell that resembles the Kekulé distortion in graphene, and such reconstruction becomes nearly commensurate with the second layer. This Kekulé moiré superlattice is realized in heterostructures of transition metal dichalcogenides and metal phosphorus trichalcogenides such as MoTe$_2$/MnPSe$_3$. By first-principles calculations, we demonstrate that the antiferromagnetic MnPSe$_3$ strongly couples the otherwise degenerate Kramers' valleys of MoTe$_2$, resulting in valley pseudospin textures that depend on Néel vector direction, stacking geometry, and external fields. With one hole per moiré supercell, we predict that the system can become a Chern insulator, of which the topology is tunable by external fields. △ Less

Submitted 14 March, 2023; originally announced March 2023.

Tunable phononic coupling in excitonic quantum emitters

Authors: Adina Ripin, Ruoming Peng, Xiaowei Zhang, Srivatsa Chakravarthi, Minhao He, Xiaodong Xu, Kai-Mei Fu, Ting Cao, Mo Li

Abstract: Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupl… ▽ More Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer semiconductor WSe2. The colocalization of quantum confined interlayer excitons and THz interlayer breathing mode phonons, which directly modulate the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Owing to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable in a wide range, promising to reach the strong coupling regime. Our result demonstrates a new type of solid-state quantum excitonic-optomechanical system at the atomic interface that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection. △ Less

Submitted 26 February, 2023; originally announced February 2023.

Comments: 20 pages, 4 figures

Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4

Authors: Tengfei Cao, Ding-Fu Shao, Kai Huang, Gautam Gurung, Evgeny Y. Tsymbal

Abstract: Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to realize novel electronic, magnetic, and transport properties of 2D vdW materials switchable by induced electric polarization. Here, based on symmetry analyses… ▽ More Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to realize novel electronic, magnetic, and transport properties of 2D vdW materials switchable by induced electric polarization. Here, based on symmetry analyses and density-functional calculations, we explore the emergence of the anomalous Hall effect (AHE) in antiferromagnetic MnBi2Te4 films assembled by polar layer stacking. We demonstrate that breaking PT symmetry in an MnBi2Te4 bilayer makes this 2D material magnetoelectric and produces a spontaneous AHE switchable by electric polarization. We find that reversable polarization at one of the interfaces in a three-layer MnBi2Te4 film drives a metal-insulator transition, as well as switching between an AHE and quantum AHE (QAHE). Finally, we predict that engineering an interlayer polarization in a three-layer MnBi2Te4 film allows converting MnBi2Te4 from a trivial insulator to a Chern insulator. Overall, our work emphasizes the emergence of quantum-transport phenomena in 2D vdW antiferromagnets by polar layer stacking, which do not exist in this material in the bulk or bulk-like thin-film forms. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Strain-programmable van der Waals magnetic tunnel junctions

Authors: John Cenker, Dmitry Ovchinnikov, Harvey Yang, Daniel G. Chica, Catherine Zhu, Jiaqi Cai, Geoffrey Diederich, Zhaoyu Liu, Xiaoyang Zhu, Xavier Roy, Ting Cao, Matthew W. Daniels, Jiun-Haw Chu, Di Xiao, Xiaodong Xu

Abstract: The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor u… ▽ More The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flip** of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Mixed-dimensional moiré systems of graphitic thin films with a twisted interface

Authors: Dacen Waters, Ellis Thompson, Esmeralda Arreguin-Martinez, Manato Fujimoto, Yafei Ren, Kenji Watanabe, Takashi Taniguchi, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the pro… ▽ More Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Layered semimetals such as graphite offer a unique platform to challenge this paradigm, owing to distinctive properties arising from their nearly-compensated electron and hole bulk do**. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and small magnetic fields, transport is mediated by a combination of gate-tunable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states owing to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene-graphite as the first in a new class of mixed-dimensional moiré materials. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Comments: 18 pages, 14 figures, 5 supplementary videos in ancillary files

Cascadable in-memory computing based on symmetric writing and read out

Authors: Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, **g**g Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang-Wook Cheong, Haijun Zhang, Shi-Jun Liang, Feng Miao

Abstract: The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anis… ▽ More The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing. △ Less

Submitted 12 November, 2022; originally announced November 2022.

Comments: Accepted by Science Advances

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for develo** novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Designing magnetic properties in CrSBr through hydrostatic pressure and ligand substitution

Authors: Evan J. Telford, Daniel G. Chica, Kaichen Xie, Nicholas S. Manganaro, Chun-Ying Huang, Jordan Cox, Avalon H. Dismukes, Xiaoyang Zhu, James P. S. Walsh, Ting Cao, Cory R. Dean, Xavier Roy, Michael E. Ziebel

Abstract: The ability to control magnetic properties of materials is crucial for fundamental research and underpins many information technologies. In this context, two-dimensional materials are a particularly exciting platform due to their high degree of tunability and ease of implementation into nanoscale devices. Here we report two approaches for manipulating the A-type antiferromagnetic properties of the… ▽ More The ability to control magnetic properties of materials is crucial for fundamental research and underpins many information technologies. In this context, two-dimensional materials are a particularly exciting platform due to their high degree of tunability and ease of implementation into nanoscale devices. Here we report two approaches for manipulating the A-type antiferromagnetic properties of the layered semiconductor CrSBr through hydrostatic pressure and ligand substitution. Hydrostatic pressure compresses the unit cell, increasing the interlayer exchange energy while lowering the Néel temperature. Ligand substitution, realized synthetically through Cl alloying, anisotropically compresses the unit cell and suppresses the Cr-halogen covalency, reducing the magnetocrystalline anisotropy energy and decreasing the Néel temperature. A detailed structural analysis combined with first-principles calculations reveal that alterations in the magnetic properties are intricately related to changes in direct Cr-Cr exchange interactions and the Cr-anion superexchange pathways. Further, we demonstrate that Cl alloying enables chemical tuning of the interlayer coupling from antiferromagnetic to ferromagnetic, which is unique amongst known two-dimensional magnets. The magnetic tunability, combined with a high ordering temperature, chemical stability, and functional semiconducting properties, make CrSBr an ideal candidate for pre- and post-synthetic design of magnetism in two-dimensional materials. △ Less

Submitted 4 November, 2022; originally announced November 2022.

Comments: Main text: 17 pages, 4 figures. Supporting Information: 34 pages, 32 figures, 4 tables

Tunable Exciton-Hybridized Magnon Interactions in a Layered Semiconductor

Authors: Geoffrey M. Diederich, John Cenker, Yafei Ren, Jordan Fonseca, Daniel G. Chica, Youn Jue Bae, Xiaoyang Zhu, Xavier Roy, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors provides a powerful platform for exploring these exciton-magnon interactions… ▽ More The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors provides a powerful platform for exploring these exciton-magnon interactions and their fundamental properties, such as strong correlation, as well as their photo-spintronic and quantum transduction applications. Here we demonstrate precise control of coherent exciton-magnon interactions in the layered magnetic semiconductor CrSBr. We show that by controlling the direction of applied magnetic fields relative to the crystal axes, and thus the rotational symmetry of the magnetic system, we can tune not only the exciton coupling to the bright magnon, but also to an optically dark mode via magnon hybridization. The exciton-magnon coupling and associated magnon dispersion curves can be further modulated by applying a uniaxial strain. At the critical strain, a dispersionless dark magnon band emerges. Our results demonstrate unprecedented control of the opto-mechanical-magnonic coupling, and a step towards the predictable and controllable implementation of hybrid quantum magnonics. △ Less

Submitted 27 September, 2022; originally announced September 2022.

Stabilizing polar phases in binary metal oxides by hole do**

Authors: Tengfei Cao, Guodong Ren, Ding-Fu Shao, Evgeny Y. Tsymbal, Rohan Mishra

Abstract: The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial growth, alloying, or defect engineering. Here, we propose hole do** plays a key role in stabilizing the polar phases in binary metal oxides. Using… ▽ More The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial growth, alloying, or defect engineering. Here, we propose hole do** plays a key role in stabilizing the polar phases in binary metal oxides. Using first-principles density-functional-theory calculations, we show that holes in these oxides mainly occupy one of the two oxygen sublattices. This hole localization, which is more pronounced in the polar phase than in the nonpolar phase, lowers the electrostatic energy of the system, and makes the polar phase more stable at sufficiently large concentrations. We demonstrate that this electrostatic mechanism is responsible for stabilization of the ferroelectric phase of HfO2 aliovalently doped with elements that introduce holes to the system, such as La and N. Finally, we show that the spontaneous polarization in HfO2 is robust to hole do**, and a large polarization persists even under a high concentration of holes. △ Less

Submitted 1 March, 2023; v1 submitted 19 September, 2022; originally announced September 2022.

Intercell Moiré Exciton Complexes in Electron Lattices

Authors: Xi Wang, Xiaowei Zhang, Jiayi Zhu, Heonjoon Park, Yingqi Wang, Chong Wang, William Holtzmann, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, Daniel R. Gamelin, Wang Yao, Di Xiao, Ting Cao, Xiaodong Xu

Abstract: Excitons, Coulomb-bound electron-hole pairs, play a fundamental role in both optical excitation and correlated phenomena in solids. When an exciton interacts with other quasi-particles, few- and many-body excited states, such as trions, exciton Fermi-polarons, Mahan excitons can appear. Here, we report a new interaction between exciton and charges enabled by unusual quantum confinement in 2D moiré… ▽ More Excitons, Coulomb-bound electron-hole pairs, play a fundamental role in both optical excitation and correlated phenomena in solids. When an exciton interacts with other quasi-particles, few- and many-body excited states, such as trions, exciton Fermi-polarons, Mahan excitons can appear. Here, we report a new interaction between exciton and charges enabled by unusual quantum confinement in 2D moiré superlattices, which results in novel exciton many-body ground states composed of moiré excitons and correlated electron lattices. Unique to H-stacked (or 60o-twisted) WS2/WSe2 heterobilayer, we found that the interlayer atomic registry and moiré structural reconstruction leads to an interlayer moiré exciton (IME) whose hole in one layer is surrounded by its partner electron's wavefunction spread among three adjacent moiré traps in the other layer. This 3D excitonic structure can enable large in-plane electrical quadrupole moments in addition to the vertical dipole. Upon do**, the electric quadrupole facilitates the binding of IME to the charges in neighboring moiré cells, forming an intercell charged exciton complex. The exciton complex is unveiled by the IME photoluminescence energy jumps when the electron lattices form at both fractional and integer-filled moiré minibands, with replica-like spectral features between successive integer moiré fillings. Our work provides the framework in understanding and engineering emergent exciton many-body states in correlated moiré charge orders. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

Authors: Sabin Regmi, Tharindu Fernando, Yuzhou Zhao, Anup Pradhan Sakhya, Gyanendra Dhakal, Iftakhar Bin Elius, Hector Vazquez, Jonathan D Denlinger, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Madhab Neupane

Abstract: Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evid… ▽ More Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material. △ Less

Submitted 21 December, 2022; v1 submitted 20 March, 2022; originally announced March 2022.

Comments: 7 pages, 4 figures; supplementary information included

Journal ref: Communications Materials, 3, 100 (2022)

Ab initio calculations of spin-nonconserving exciton-phonon scattering in monolayer transition metal dichalcogenides

Authors: Xiaowei Zhang, Ting Cao

Abstract: We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation method and density functional perturbation theory, we calculate the electron-phonon and exciton-phonon coupling matrix elements for the spin-flip scattering in mo… ▽ More We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation method and density functional perturbation theory, we calculate the electron-phonon and exciton-phonon coupling matrix elements for the spin-flip scattering in monolayer WSe$_{\text{2}}$, and further analyze the microscopic mechanisms influencing these scattering strengths. We find that phonons could produce effective in-plane magnetic fields which flip spin of excitons, giving rise to relaxation channels complimentary to the spin-conserving relaxation. Finally, we calculate temperature-dependent spin-flip exciton-phonon relaxation times. Our method and analysis can be generalized to study other two-dimensional materials and would stimulate experimental measurements of spin-flip exciton relaxation dynamics. △ Less

Submitted 6 February, 2022; originally announced February 2022.

Comments: 7 pages, 6 figures

Capture Agent Free Biosensing using Porous Silicon Arrays and Machine Learning

Authors: Simon J. Ward, Tengfei Cao, Xiang Zhou, Catie Chang, Sharon M. Weiss

Abstract: Biosensors are an essential tool for medical diagnostics, environmental monitoring and food safety. Typically, biosensors are designed to detect specific analytes through functionalization with the appropriate capture agents. However, the use of capture agents limits the number of analytes that can be simultaneously detected and reduces the robustness of the biosensor. In this work, we report a ve… ▽ More Biosensors are an essential tool for medical diagnostics, environmental monitoring and food safety. Typically, biosensors are designed to detect specific analytes through functionalization with the appropriate capture agents. However, the use of capture agents limits the number of analytes that can be simultaneously detected and reduces the robustness of the biosensor. In this work, we report a versatile, capture agent free biosensor platform based on an array of porous silicon (PSi) thin films, which has the potential to robustly detect a wide variety of analytes based on their physical and chemical properties in the nanoscale porous media. The ability of this system to reproducibly classify, quantify, and discriminate three proteins is demonstrated to concentrations down to at least 0.02g/L (between 300nM and 450nM) by utilizing PSi array elements with a unique combination of pore size and buffer pH, employing linear discriminant analysis for dimensionality reduction, and using support vector machines as a classifier. This approach represents a significant step towards a low cost, simple and robust biosensor platform that is able to detect a vast range of biomolecules. △ Less

Submitted 22 January, 2022; originally announced January 2022.

Comments: 15 pages, 3 figures, 2 tables

Journal ref: Biosensors 13 (2023) 1-12

Phonon-mediated exciton relaxation in two-dimensional semiconductors: selection rules and relaxation pathways

Authors: Xiao-Wei Zhang, Kaichen Xie, En-Ge Wang, Ting Cao, Xin-Zheng Li

Abstract: Exciton-phonon coupling (ExPC) is crucial for energy relaxation in semiconductors, yet the first-principles calculation of such coupling remains challenging, especially for low-dimensional systems. Here, an accurate algorithm for calculating ExPC is developed and applied in exciton relaxation problems in monolayer WSe2. Considering the interplay between the exciton wave functions and electron-phon… ▽ More Exciton-phonon coupling (ExPC) is crucial for energy relaxation in semiconductors, yet the first-principles calculation of such coupling remains challenging, especially for low-dimensional systems. Here, an accurate algorithm for calculating ExPC is developed and applied in exciton relaxation problems in monolayer WSe2. Considering the interplay between the exciton wave functions and electron-phonon coupling (EPC) matrix elements, we find that ExPC shows distinct selection rules from the ones of EPC. By employing the Wannier exciton model, we generalize these selection rules, which state that the angular quantum numbers of the exciton must match the winding numbers of the EPC matrix elements for the ExPC to be allowed. To verify our theory and algorithm, we calculate inter-valley exciton relaxation pathways, which agrees well with a recent experiment. △ Less

Submitted 19 October, 2021; v1 submitted 17 October, 2021; originally announced October 2021.

Comments: 6 pages, 4 figures

Long-range transport of 2D excitons with acoustic waves

Authors: Ruoming Peng, Adina Ripin, Yusen Ye, Jiayi Zhu, Changming Wu, Seokhyeong Lee, Huan Li, Takashi Taniguchi, Kenji Watanabe, Ting Cao, Xiaodong Xu, Mo Li

Abstract: Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunabili… ▽ More Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature. △ Less

Submitted 22 February, 2022; v1 submitted 3 August, 2021; originally announced August 2021.

Comments: 16 pages, 5 figures

Modeling Temperature, Frequency, and Strain Effects on the Linear Electro-Optic Coefficients of Ferroelectric Oxides

Authors: Yang Liu, Guodong Ren, Tengfei Cao, Rohan Mishra, Jayakanth Ravichandran

Abstract: An electro-optic modulator offers the function of modulating the propagation of light in a material with electric field and enables seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We pre… ▽ More An electro-optic modulator offers the function of modulating the propagation of light in a material with electric field and enables seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We present a semi-empirical method to compute the electro-optic coefficients of ferroelectric materials by combining first-principles density-functional theory calculations with Landau-Devonshire phenomenological modeling. We apply the method to study the electro-optic constants, also called Pockels coefficients, of three paradigmatic ferroelectric oxides: BaTiO3, LiNbO3, and LiTaO3. We present their temperature-, frequency- and strain-dependent electro-optic tensors calculated using our method. The predicted electro-optic constants agree with the experimental results, where available, and provide benchmarks for experimental verification. △ Less

Submitted 18 November, 2021; v1 submitted 5 June, 2021; originally announced June 2021.

Comments: 30 pages, 6 figures, 2 tables and 2 boxes

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Authors: Xiaowei Liu, Yaojia Wang, Qiqi Guo, Shijun Liang, Tao Xu, Bo Liu, Jiabin Qiao, Shengqiang Lai, Junwen Zeng, Song Hao, Chenyi Gu, Tianjun Cao, Chenyu Wang, Yu Wang, Chen Pan, Guangxu Su, Yuefeng Nie, Xiangang Wan, Litao Sun, Zhenlin Wang, Lin He, Bin Cheng, Feng Miao

Abstract: Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco… ▽ More Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Comments: 24 pages, 12 figures, accepted by Physical Review Materials

Interlayer Electronic Coupling on Demand in a 2D Magnetic Semiconductor

Authors: Nathan P. Wilson, Kihong Lee, John Cenker, Kaichen Xie, Avalon H. Dismukes, Evan J. Telford, Jordan Fonseca, Shivesh Sivakumar, Cory Dean, Ting Cao, Xavier Roy, Xiaodong Xu, Xiaoyang Zhu

Abstract: When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tun… ▽ More When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayer and above can be drastically changed when the magnetic order is switched from layered antiferromagnetic to the field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by GW-BSE calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: 16 pages, 4 figures, 10 pages SI

Spin Photovoltaic Effect in Magnetic van der Waals Heterostructures

Authors: Tiancheng Song, Eric Anderson, Matisse Wei-Yuan Tu, Kyle Seyler, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, Xiaosong Li, Ting Cao, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics with spontaneous time-reversal symmetry breaking. Here, we report spin photovol… ▽ More The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics with spontaneous time-reversal symmetry breaking. Here, we report spin photovoltaic effects in vdW heterostructures of atomically thin magnet chromium triiodide (CrI3) sandwiched by graphene contacts. In the absence of a magnetic field, the photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization-resolved absorption measurements reveal that these observations originate from magnetic-order-coupled and thus helicity-dependent charge-transfer exciton states. The photocurrent displays multiple plateaus as the magnetic field is swept, which are associated with different spin configurations enabled by the layered antiferromagnetism and spin-flip transitions in CrI3. Remarkably, giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photo-spintronics by engineering magnetic vdW heterostructures. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Imaging graphene moiré superlattices via scanning Kelvin probe microscopy

Authors: Junxi Yu, Rajiv Giridharagopal, Yuhao Li, Kaichen Xie, Jiangyu Li, Ting Cao, Xiaodong Xu, David S. Ginger

Abstract: Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral P… ▽ More Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral Piezoresponse Force Microscopy (LPFM) and Scanning Kelvin Probe Microscopy (SKPM), we distinguish between Bernal (ABAB) and rhombohedral (ABCA) stacked graphene and directly correlate these stacking configurations with local surface potential. We find that the surface potential of the ABCA domains is ~15 mV higher (smaller work function) than that of the ABAB domains. First-principles calculations based on density functional theory further show that the different work functions between ABCA and ABAB domains arise from the stacking dependent electronic structure. We show that, while the moiré superlattice visualized by LPFM can change with time, imaging the surface potential distribution via SKPM appears more stable, enabling the map** of ABAB and ABCA domains without tip-sample contact-induced effects. Our results provide a new means to visualize and probe local domain stacking in moiré superlattices along with its impact on electronic properties. △ Less

Submitted 17 February, 2021; originally announced February 2021.

Comments: 15 pages, 4 figures

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Authors: Thomas Orvis, Tengfei Cao, Mythili Surendran, Harish Kumarasubramanian, Austin Cunniff, Rohan Mishra, Jayakanth Ravichandran

Abstract: The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive characterization are critical for active monitoring and control of epitaxial synthesis, and hence the atomic-scale engineering of heterostructures and superlattices. Terminat… ▽ More The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive characterization are critical for active monitoring and control of epitaxial synthesis, and hence the atomic-scale engineering of heterostructures and superlattices. Termination switching, especially as an interfacial process in ternary complex oxides, has been studied using a variety of probes, often ex situ; however, direct observation of this phenomena is lacking. To address this need, we establish in situ and real time reflection high energy electron diffraction and Auger electron spectroscopy for pulsed laser deposition, which provide structural and compositional information of the surface during film deposition. Using this unique capability, we show, for the first time, the direct observation and control of surface termination in complex oxide heterostructures of SrTiO3 and SrRuO3. Density-functional-theory calculations capture the energetics and stability of the observed structures and elucidate their electronic behavior. This demonstration opens up a novel approach to monitor and control the composition of materials at the atomic scale to enable next-generation heterostructures for control over emergent phenomena, as well as electronics, photonics, and energy applications. △ Less

Submitted 9 February, 2021; originally announced February 2021.

Comments: 23 pages, 3 figures, submitted to ACS Nano Letters

Electric Field Tunable Topological Phases in Graphene Nanoribbons

Authors: Fangzhou Zhao, Ting Cao, Steven G. Louie

Abstract: Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field (TEF), certain boron and nitrogen periodically co-doped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conductio… ▽ More Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field (TEF), certain boron and nitrogen periodically co-doped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valance-band states to the electric field. With a spatially-varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topological junction states, each may be occupied with charge or spin. Our findings not only show that electric field may be used as an easy tuning knob for topological phases in quasi-one-dimensional systems, but also provide new design principles for future GNR-based quantum electronic devices through their topological characters. △ Less

Submitted 8 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Lett. 127, 166401 (2021)

Strain-Rate-Dependent Deformation Behavior of Ti29Zr24Nb23Hf24 High Entropy Alloys at Elevated and Room Temperature

Authors: Tangqing Cao, Wenqi Guo, Wang Lu, Yunfei Xue, Wenjun Lu, **g Su, Christian H. Liebscher, Chang Liu, Gerhard Dehm

Abstract: We investigate the strain-rate-dependent mechanical behavior and deformation mechanisms of a refractory high entropy alloy, Ti29Zr24Nb23Hf24 (at.%), with a single-phase body-centered cubic (BCC) structure. High-temperature compression tests were conducted at temperatures from 700 to 1100°C at strain rates ranging from 10-3 to 10 s-1. A sudden stress drop after yield point was observed at higher te… ▽ More We investigate the strain-rate-dependent mechanical behavior and deformation mechanisms of a refractory high entropy alloy, Ti29Zr24Nb23Hf24 (at.%), with a single-phase body-centered cubic (BCC) structure. High-temperature compression tests were conducted at temperatures from 700 to 1100°C at strain rates ranging from 10-3 to 10 s-1. A sudden stress drop after yield point was observed at higher temperatures and lower strain rates with the Zener-Holloman parameter, lnZ, in the range of 17.2-20.7. Such a softening behavior can be related to the interaction of dislocations with short-range clustering. However, at higher strain rates or lower temperatures (lnZ>25.0), kink bands were activated being responsible for the continuous strengthening of the alloy in competition with the softening mechanism. Systematic TEM investigations reveal that dislocation walls formed along {110} planes and dislocation loops were observed at a low strain of 6% at a high strain rate of 1 s-1 and 800°C. Kink band induced dynamic recrystallization is evident upon further straining. On the other hand, at low strain rate of 10-3 s-1 and 800°C, discontinuous recrystallization mechanisms become dominant with arrays of dislocations forming in front of the bulged boundaries of parent grains. These sub-grain boundaries eventually turn into high-angle grain boundaries. We also investigate the deformation mechanism of the alloy under extremely high strain rate (103 s-1) at room temperature. The specimen exhibits extensive kink bands with arrays of dislocation walls. As further strained, multiple slip systems can be activated and the interaction of dislocation walls plays a vital role in the strain hardening of the alloy. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Experimental measurement of the intrinsic excitonic wavefunction

Authors: Michael K. L. Man, Julien Madéo, Chakradhar Sahoo, Kaichen Xie, Marshall Campbell, Vivek Pareek, Arka Karmakar, E Laine Wong, Abdullah Al-Mahboob, Nicholas S. Chan, David R. Bacon, Xing Zhu, Mohamed Abdelrasoul, Xiaoquin Li, Tony F. Heinz, Felipe H. da Jornada, Ting Cao, Keshav M. Dani

Abstract: An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoem… ▽ More An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoemitted from excitons in monolayer WSe2. By transforming to real space, we obtain a visual of the distribution of the electron around the hole in an exciton. Further, by also resolving the energy coordinate, we confirm the elusive theoretical prediction that the photoemitted electron exhibits an inverted energy-momentum dispersion relationship reflecting the valence band where the partner hole remains, rather than that of conduction-band states of the electron. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 27 pages

Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution

Authors: Yunfan Guo, Yuxuan Lin, Kaichen Xie, Biao Yuan, Jiadi Zhu, Pin-Chun Shen, Ang-Yu Lu, Cong Su, Enzheng Shi, Kunyan Zhang, Zhengyang Cai, Jihoon Park, Qingqing Ji, Jiangtao Wang, Xiaochuan Dai, Xuezeng Tian, Shengxi Huang, Letian Dou, Ju Li, Yi Yu, Juan-Carlos Idrobo, Ting Cao, Tomás Palacios, **g Kong

Abstract: Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these… ▽ More Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these materials have led to fabrication of heterostructures, superlattices, and twisted structures with breakthrough discoveries and applications. Here, we report a novel atomic-scale material design tool that selectively breaks and forms chemical bonds of 2D materials at room temperature, called atomic-layer substitution (ALS), through which we can substitute the top layer chalcogen atoms within the 3-atom-thick transition-metal dichalcogenides using arbitrary patterns. Flip** the layer via transfer allows us to perform the same procedure on the other side, yielding programmable in-plane multi-heterostructures with different out-of-plane crystal symmetry and electric polarization. First-principle calculations elucidate how the ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. Optical characterizations confirm the fidelity of this design approach, while TEM shows the direct evidence of Janus structure and suggests the atomic transition at the interface of designed heterostructure. Finally, transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y corresponding to the bottom and top layers) lateral multi-heterostructures reveal the surface potential and dipole orientation of each region, and the barrier height between them. Our approach for designing artificial 2D landscape down to a single layer of atoms can lead to unique electronic, photonic and mechanical properties previously not found in nature. △ Less

Submitted 15 November, 2020; originally announced November 2020.

Phase Change Material Photonics

Authors: Robert E. Simpson, Tun Cao

Abstract: In the last decade phase change materials (PCM) research has switched from practical application in optical data storage toward electrical phase change random access memory technologies (PCRAM). As these devices are commercialised, we expect the research direction to switch once again toward electrical-photonic devices. The objective of this review is to introduce the concepts in PCM-tuned photoni… ▽ More In the last decade phase change materials (PCM) research has switched from practical application in optical data storage toward electrical phase change random access memory technologies (PCRAM). As these devices are commercialised, we expect the research direction to switch once again toward electrical-photonic devices. The objective of this review is to introduce the concepts in PCM-tuned photonics. We will start by highlighting the key works in the field, before concentrating on PCM-tuned Metal-Dielectric-Metal (MDM) structures. We will discuss how to design tuneable-MDM photonics devices, their advantages, and their limitations. Finally we will discuss new materials for phase change photonics. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Comments: 28 pages, 14 figures, adapted from a chapter to be published in the World Scientific Reference of Amorphous Materials

Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors

Authors: Julien Madéo, Michael K. L. Man, Chakradhar Sahoo, Marshall Campbell, Vivek Pareek, E Laine Wong, Abdullah Al Mahboob, Nicholas S. Chan, Arka Karmakar, Bala Murali Krishna Mariserla, Xiaoqin Li, Tony F. Heinz, Ting Cao, Keshav M. Dani

Abstract: Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical t… ▽ More Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Comments: 34 pages

Journal ref: Science, 04 Dec 2020: Vol. 370, Issue 6521, pp. 1199-1204

Momentum-Dark Intervalley Exciton in Monolayer Tungsten Diselenide Brightened via Chiral Phonon

Authors: Zhipeng Li, Tianmeng Wang, Chenhao **, Zhengguang Lu, Zhen Lian, Yuze Meng, Mark Blei, Mengnan Gao, Takashi Taniguchi, Kenji Watanabe, Tianhui Ren, Ting Cao, Sefaattin Tongay, Dmitry Smirnov, Lifa Zhang, Su-Fei Shi

Abstract: Inversion symmetry breaking and three-fold rotation symmetry grant the valley degree of freedom to the robust exciton in monolayer transition metal dichalcogenides (TMDCs), which can be exploited for valleytronics applications. However, the short lifetime of the exciton significantly constrains the possible applications. In contrast, dark exciton could be long-lived but does not necessarily posses… ▽ More Inversion symmetry breaking and three-fold rotation symmetry grant the valley degree of freedom to the robust exciton in monolayer transition metal dichalcogenides (TMDCs), which can be exploited for valleytronics applications. However, the short lifetime of the exciton significantly constrains the possible applications. In contrast, dark exciton could be long-lived but does not necessarily possess the valley degree of freedom. In this work, we report the identification of the momentum-dark, intervalley exciton in monolayer WSe2 through low-temperature magneto-photoluminescence (PL) spectra. Interestingly, the intervalley exciton is brightened through the emission of a chiral phonon at the corners of the Brillouin zone (K point), and the pseudoangular momentum (PAM) of the phonon is transferred to the emitted photon to preserve the valley information. The chiral phonon energy is determined to be ~ 23 meV, based on the experimentally extracted exchange interaction (~ 7 meV), in excellent agreement with the theoretical expectation of 24.6 meV. The long-lived intervalley exciton with valley degree of freedom adds an exciting quasiparticle for valleytronics, and the coupling between the chiral phonon and intervalley exciton furnishes a venue for valley spin manipulation. △ Less

Submitted 27 November, 2019; originally announced November 2019.

Journal ref: published in ACS Nano, 2019

Local electric field induced spin photocurrent in ReS2

Authors: Yang Zhang, Yu Wang, Yu Liu, Xiao-Lin Zeng, **g Wu, ** ling Yu, Tian-Jun Cao, Shi-Jun Liang, Yong-Hai Chen

Abstract: Circular polarized photocurrent is observed near the electrodes on a few-layer ReS2sample at room temperature. For both electrodes, the spatial distribution of the circular polarized photocurrent shows a feature of two wings, with one positive and the other negative. We suggest that this phenomenon arises from the inverse spin Hall effect due to local electric field near the electrode. Bias voltag… ▽ More Circular polarized photocurrent is observed near the electrodes on a few-layer ReS2sample at room temperature. For both electrodes, the spatial distribution of the circular polarized photocurrent shows a feature of two wings, with one positive and the other negative. We suggest that this phenomenon arises from the inverse spin Hall effect due to local electric field near the electrode. Bias voltage that modulates this field further controls the sign and magnitude of the inverse spin Hall effect photocurrent. Our research shows that electric field near electrodes has a significant impact on spin transmission operation, hence it could be taken into account for manufacturing spintronic devices in future. △ Less

Submitted 18 November, 2019; originally announced November 2019.

Comments: 14 pages,6 figures

Inducing Metallicity in Graphene Nanoribbons via Zero-Mode Superlattices

Authors: Daniel J. Rizzo, Gregory Veber, **gwei Jiang, Ryan McCurdy, Ting Cao, Christopher Bronner, Ting Chen, Steven G. Louie, Felix R. Fischer, Michael F. Crommie

Abstract: The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies fo… ▽ More The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies for realizing GNR metallicity have been elusive. Here we demonstrate a general technique for inducing metallicity in GNRs by inserting a symmetric superlattice of zero-energy modes into otherwise semiconducting GNRs. We verify the resulting metallicity using scanning tunneling spectroscopy as well as first-principles density-functional theory and tight binding calculations. Our results reveal that the metallic bandwidth in GNRs can be tuned over a wide range by controlling the overlap of zero-mode wavefunctions through intentional sublattice symmetry-breaking. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Comments: The first three authors listed contributed equally