Showing 1–50 of 58 results for author: Canali, C

Capacitive detection of the topological magnetoelectric effect

Authors: Chao Lei, Perry T. Mahon, C. M. Canali, A. H. MacDonald

Abstract: The topological magnetoelectric effect (TME) is a defining property of 3-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME, and discuss the precision of the effect in real devices with charge and spin disorder. The topological magnetoelectric effect (TME) is a defining property of 3-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME, and discuss the precision of the effect in real devices with charge and spin disorder. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Comments: 5 + 1 pages, 3 figures

Optimal magnetization switching via spin-orbit torque on the surface of a topological insulator

Authors: Grzegorz J. Kwiatkowski, Ivan P. Miranda, Cecilia M. Holmqvist, Carlo M. Canali, Igor S. Lobanov, Valery M. Uzdin, Andrei Manolescu, Pavel F. Bessarab, Sigurður I. Erlingsson

Abstract: An optimal protocol for the current-induced switching of a perpendicularly magnetized nanoelement placed on the surface of a topological insulator is presented. The time dependence of both in-plane components of the surface current that induces the magnetization reversal via Dirac spin-orbit torque with minimal Joule heating is derived analytically as a function of the required switching time and… ▽ More An optimal protocol for the current-induced switching of a perpendicularly magnetized nanoelement placed on the surface of a topological insulator is presented. The time dependence of both in-plane components of the surface current that induces the magnetization reversal via Dirac spin-orbit torque with minimal Joule heating is derived analytically as a function of the required switching time and material properties. It is demonstrated that a particularly energy-efficient switching is realized for vanishing dam**like torque. The optimal reversal time providing a tradeoff between the switching speed and energy efficiency is derived. The obtained switching protocol is contrasted with the one realized in heavy-metal systems. Topological insulators provide a highly tunable platform for the realization of energy-efficient magnetization switching. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Chiral edge transport along domain walls in magnetic topological insulator nanoribbons

Authors: Nezhat Pournaghavi, Carlo M. Canali

Abstract: Quantum anomalous Hall insulators are topologically characterized by non-zero integer Chern numbers, the sign of which depends on the direction of the exchange field that breaks time-reversal symmetry. This feature allows the manipulation of the conducting chiral edge states present at the interface of two magnetic domains with opposite magnetization and opposite Chern numbers. Motivated by this b… ▽ More Quantum anomalous Hall insulators are topologically characterized by non-zero integer Chern numbers, the sign of which depends on the direction of the exchange field that breaks time-reversal symmetry. This feature allows the manipulation of the conducting chiral edge states present at the interface of two magnetic domains with opposite magnetization and opposite Chern numbers. Motivated by this broad understanding, the present study investigates the quantum transport properties of a magnetized $Bi_2Se_3$ topological insulator nanoribbon with a domain wall oriented either parallel or perpendicular to the transport direction. Employing an atomistic tight-binding model and a non-equilibrium Green's function formalism, we calculate the quantum conductance and explore the nature of the edge states. We elucidate the conditions leading to exact conductance quantization and identify the origin of deviations from this behavior. Our analysis shows that although the conductance is quantized in the presence of the horizontal domain wall, the quantization is absent in the perpendicular domain wall case. Furthermore, the investigation of the spin character of the edge modes confirms that the conductance in the horizontal domain wall configuration is spin polarized. This finding underscores the potential of our system as a simple three dimensional spin-filter device. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 9 pages, 6 figures

Non-collinear first-principles studies of the spin-electric coupling in frustrated triangular molecular magnets

Authors: M. F. Islam, Kushantha P. K. Withanage, C. M. Canali, Mark R. Pederson

Abstract: Frustrated triangular molecular magnets (MMs) with anti-ferromagnetic ground states (GS) are an important class of magnetic systems with potential applications in quantum information processing. The two-fold degenerate GS of these molecules, characterized by spin chirality, can be utilized to encode qubits for quantum computing. Furthermore, because of the lack of inversion symmetry in these molec… ▽ More Frustrated triangular molecular magnets (MMs) with anti-ferromagnetic ground states (GS) are an important class of magnetic systems with potential applications in quantum information processing. The two-fold degenerate GS of these molecules, characterized by spin chirality, can be utilized to encode qubits for quantum computing. Furthermore, because of the lack of inversion symmetry in these molecules, an electric field couples directly states of opposite chirality, allowing a very efficient and fast control of the qubits. In this work we present a theoretical method to calculate the spin-electric coupling for triangular MMs with effective {\it local} spins $s$ larger than 1/2, which is amenable to a first-principles implementation based on density functional theory (DFT). In contrast to MMs where the net magnetization at the magnetic atoms is $μ_{\rm B}/2$ ($μ_{\rm B} $ is the Bohr magneton), the DFT treatment of frustrated triangular MMs with larger local magnetizations requires a fully non-collinear approach, which we have implemented in the NRLMOL DFT code. As an example, we have used these methods to evaluate the spin-electric coupling for a spin $s = 5/2$ $\{\mathrm{Fe_3}\}$ triangular MM, where this effect has been observed experimentally for the first time quite recently. Our theoretical and computational methods will help elucidate and further guide ongoing experimental work in the field of quantum molecular spintronics. △ Less

Submitted 16 February, 2024; originally announced February 2024.

Comments: 9 pages, 6 figures

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

Authors: Ghulam Hussain, Giuseppe Cuono, Piotr Dziawa, Dorota Janaszko, Janusz Sadowski, Slawomir Kret, Boguslawa Kurowska, Jakub Polaczynski, Kinga Warda, Shahid Sattar, Carlo M. Canali, Alexander Lau, Wojciech Brzezicki, Tomasz Story, Carmine Autieri

Abstract: We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w… ▽ More We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region. △ Less

Submitted 17 May, 2024; v1 submitted 7 January, 2024; originally announced January 2024.

Comments: 13 pages, 10 figures

Journal ref: Nanoscale Horizons (2024)

Electric control of spin states in frustrated triangular molecular magnets

Authors: J. F. Nossa, M. F. Islam, Mark R. Pederson, C. M. Canali

Abstract: Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate… ▽ More Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate for quantum information processing. The efficiency of the spin-electric coupling depends on the electric dipole coupling between the chiral ground states of these molecules. In this paper, we report on first-principles calculations of spin-electric coupling in $\{V_3\}$ triangular magnetic molecule. We have explicitly calculated the spin-induced charge redistribution within the magnetic centers that is responsible for the spin-electric coupling. Furthermore, we have generalized the method of calculating the strength of the spin-electric coupling to calculate any triangular spin 1/2 molecule with $C_3$ symmetry and have applied it to calculate the coupling strength in $\{V_{15}\}$ molecular magnets. △ Less

Submitted 7 December, 2022; originally announced December 2022.

Engineering axion insulator phase in superlattices with inversion symmetry breaking

Authors: Rajibul Islam, Sougata Mardanya, Alexander Lau, Giuseppe Cuono, Tay-Rong Chang, Bahadur Singh, Carlo M. Canali, Tomasz Dietl, Carmine Autieri

Abstract: We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnT… ▽ More We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnTe, which is the ground state amongst all magnetic configurations. Defining $T$ as the time-reversal symmetry, this axion insulator phase is protected by a magnetic two-fold rotational symmetry $C_2{\cdot}T$. The axion insulator phase evolves into a trivial insulator as we increase the thickness of the magnetic layers. By switching the Néel vector direction into the $ab$ plane, the system realizes different antiferromagnetic topological insulators depending on the thickness of MnTe. These phases feature gapless surface Dirac cones shifted away from high-symmetry points on surfaces perpendicular to the Néel vector direction of the magnetic layers. In the presence of ferromagnetism, the system realizes a magnetic Weyl semimetal and a ferromagnetic semimetal for out-of-plane and in-plane magnetization directions, respectively. We observe large anomalous Hall conductivity in the presence of ferromagnetism in the three-dimensional superlattice. △ Less

Submitted 19 February, 2023; v1 submitted 9 November, 2022; originally announced November 2022.

Comments: 14 pages, 13 figures

Journal ref: Phys. Rev. B 107, 125102 (2023)

Monolayer MnX and Janus XMnY (X, Y= S, Se, Te): A New Family of 2D Antiferromagnetic Semiconductors

Authors: Shahid Sattar, Md. Fhokrul Islam, C. M. Canali

Abstract: We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carryin… ▽ More We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer atomic structure (consisting of Mn atoms buckled to chalcogens forming top and bottom ferromagnetic (FM) planes with antiparallel spin orientation) are dynamically and thermally stable. The analysis of the the magnetic properties shows that these materials have robust AFM order, retaining a much lower energy than the FM state even for under strain. Our electronic structure calculations reveal that pristine MnX and their Janus counterparts are indirect-gap semiconductors, covering a wide energy range and displaying tunable band gaps by the application of biaxial tensile and compressive strain. Interestingly, owing to the absence of inversion and time-reversal symmetry, and the presence of an asymmetrical potential in the out-of-plane direction, Janus XMnY become spin-split gapped systems, presenting a rich physics yet to be explored. Our findings provide novel insights in this physics, and highlight the potential for these two-dimensional manganese chalcogenides in AFM spintronics. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Comments: 9 pages, 8 Figures

Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides

Authors: Shahid Sattar, J. Andreas Larsson, C. M. Canali, Stephan Roche, Jose H. Garcia

Abstract: We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys dis… ▽ More We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provides a platform for exploring novel spin-valley physics in low-dimensional semiconductors, with potential spin transport mechanisms such as spin-orbit torques much more resilient to disorder and temperature effects. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 105, L041402 (2022)

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

Authors: A. S. Wadge, G. Grabecki, C. Autieri, B. J. Kowalski, P. Iwanowski, G. Cuono, M. F. Islam, C. M. Canali, K. Dybko, A. Hruban, A. Łusakowski, T. Wojciechowski, R. Diduszko, A. Lynnyk, N. Olszowska, M. Rosmus, J. Kołodziej, A. Wiśniewski

Abstract: We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$… ▽ More We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-do** of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials. △ Less

Submitted 10 January, 2022; v1 submitted 9 August, 2021; originally announced August 2021.

Comments: 12 pages, 13 figures

Journal ref: J. Phys.: Condens. Matter, 34, 2022,125601

Non-local sidewall response and deviation from exact quantization of the topological magnetoelectric effect in axion-insulator thin films

Authors: Nezhat Pournaghavi, Anna Pertsova, Allan H. MacDonald, Carlo Canali

Abstract: Topological insulator (TI) thin films with surface magnetism are expected to exhibit a quantized anomalous Hall effect (QAHE) when the magnetizations on the top and bottom surfaces are parallel, and a quantized topological magnetoelectric (QTME) response when the magnetizations have opposing orientations (axion insulator phase) and the films are sufficiently thick. We present a unified picture of… ▽ More Topological insulator (TI) thin films with surface magnetism are expected to exhibit a quantized anomalous Hall effect (QAHE) when the magnetizations on the top and bottom surfaces are parallel, and a quantized topological magnetoelectric (QTME) response when the magnetizations have opposing orientations (axion insulator phase) and the films are sufficiently thick. We present a unified picture of both effects that associates deviations from exact quantization of the QTME caused by finite thickness with non-locality in the side-wall current response function. Using realistic tight-binding model calculations, we show that in $Bi_2Se_3$ TI thin films deviations from quantization in the axion insulator-phase are reduced in size when the exchange coupling of tight-binding model basis states to the local magnetization near the surface is strengthened. Stronger exchange coupling also reduces the effect of potential disorder, which is unimportant for the QAHE but detrimental for the QTME, which requires that the Fermi energy lie inside the gap at all positions. △ Less

Submitted 10 November, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, L201102 (2021)

Realization of the Chern insulator and Axion insulator phases in antiferromagnetic $MnTe$-$Bi_2(Se, Te)_3$-$MnTe$ heterostructures

Authors: N. Pournaghavi, M. F. Islam, Rajibul Islam, Carmine Autieri, Tomasz Dietl, C. M. Canali

Abstract: Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te… ▽ More Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te$_3$) TI thin film sandwiched between two antiferromagnetic MnTe layers. We find that an orthogonal exchange field from the MnTe layers, stabilized by a small anisotropy barrier, opens an energy gap of the order of 10 meV at the Dirac point of the TI film. A topological analysis demonstrates that, depending on the relative orientation of the exchange field at the two interfaces, the total Chern number of the system is either ${\cal C} = 1$ or ${\cal C} = 0$, characteristic of the CI and the AI phase, respectively. Non-topological surface states inside the energy-gap region, caused by the interface potential, complicate this identification. Remarkably though, the calculation of the anomalous Hall conductivity shows that such non-topological surface states do not affect the topology-induced transport properties. Given the size of the exchange gap, we estimate that gapless chiral edge states, leading to the quantum anomalous Hall effect, should emerge on the sidewalls of these heterostructures in the CI phase for widths $\ge 200$ nm. We also discuss the possibility of inducing transitions between the CI and the AI phases by means of the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer. △ Less

Submitted 15 May, 2021; v1 submitted 15 January, 2021; originally announced January 2021.

Comments: 13 pages, 8 figures

Journal ref: Phys. Rev. B 103, 195308 (2021)

Impurity induced topological phase transitions in Cd$_3$As$_2$ and Na$_3$Bi Dirac semimetals

Authors: A. Rancati, N. Pournaghavi, M. F. Islam, A. Debernardi, C. M. Canali

Abstract: Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices o… ▽ More Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices of the impurity do**, induces phase transitions from the original Dirac semimetal to a variety of topological phases such as, topological insulator, trivial semimetal, non-magnetic and magnetic Weyl semimetal, and Chern insulator. The Dirac semimetal phase can exist only if the rotational symmetry $C_n$ with $n > 2$ is maintained. One particularly interesting phase emerging in doped $Cd_3As_2$ is a coexisting Dirac-Weyl phase, which occurs when only inversion symmetry is broken while time-reversal symmetry and rotational symmetry are both preserved. To further characterize the low-energy excitations of this phase, we have complemented our density functional results with a continuum four-band $k\cdot p$ model, which indeed displays nodal points of both Dirac and Weyl type. The coexisting phase appears as a transition point between two topologically distinct Dirac phases, but may also survive in a small region of parameter space controlled by external strain. △ Less

Submitted 11 November, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. B 102, 195110 (2020)

A Multiferroic Molecular Magnetic Qubit

Authors: Alexander I Johnson, M. Fhokrul Islam, Carlo M. Canali, Mark R Pederson

Abstract: The chiral $Fe_3O(NC_5H_5)_3(O_2CC_6H_5)_6$ molecular cation, with C$_3$ symmetry, is composed of three six-fold coordinated spin-carrying Fe$^{3+}$ cations that form a perfect equilateral triangle. Experimental reports demonstrating the spin-electric effect in this system also identify the presence of a magnetic uni-axis and suggest that this molecule may be a good candidate for an externally con… ▽ More The chiral $Fe_3O(NC_5H_5)_3(O_2CC_6H_5)_6$ molecular cation, with C$_3$ symmetry, is composed of three six-fold coordinated spin-carrying Fe$^{3+}$ cations that form a perfect equilateral triangle. Experimental reports demonstrating the spin-electric effect in this system also identify the presence of a magnetic uni-axis and suggest that this molecule may be a good candidate for an externally controllable molecular qubit. Here we demonstrate, using standard density-functional methods, that the spin-electric behavior of this molecule could be even more interesting as there are energetically competitive reference states associated with both high and low local spins (S=5/2 vs. S=1/2) on the Fe$^{3+}$ ions. Each of these structures allow for spin-electric ground states. We find that qualitative differences in the broadening of the Fe(2s) and O(1s) core levels and the single-spin anisotropy Hamiltonian may be used to confirm whether the high-spin manifold is lower in energy than the low-spin manifold. △ Less

Submitted 15 October, 2019; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: J. Chem. Phys. 151, 174104 (2019)

Impurity-potential-induced gap at the Dirac point of topological insulators with in-plane magnetization

Authors: M. F. Islam, Anna Pertsova, C. M. Canali

Abstract: The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal symmetry. Magnetically-doped topological insulators (TIs) satisfy both these criteria, and are the most promising quantum materials for realizing the QAHE. Beca… ▽ More The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal symmetry. Magnetically-doped topological insulators (TIs) satisfy both these criteria, and are the most promising quantum materials for realizing the QAHE. Because the spin of the surface electrons aligns along the direction of magnetic-impurity exchange field, only magnetic TIs with an out-of-plane magnetization are thought to open a gap at the Dirac point (DP) of the surface states, resulting in the QAHE. Using a continuum model supported by atomistic tight-binding and first-principles calculations of transition-metal doped Bi$_2$Se$_3$, we show that a surface-impurity potential generates an additional effective magnetic field which spin-polarizes the surface electrons along the direction perpendicular to the surface. The predicted gap-opening mechanism results from the interplay of this additional field and the in-plane magnetization that shifts the position of the DP away from the $Γ$ point. This effect is similar to the one originating from the hexagonal war** correction of the bandstructure but is one order of magnitude stronger. Our calculations show that in a doped TI with in-plane magnetization the impurity-potential-induced gap at the DP is comparable to the one opened by an out-of-plane magnetization. △ Less

Submitted 19 March, 2019; v1 submitted 18 January, 2019; originally announced January 2019.

Comments: 6 pages, 2 figures

Quantum transport by spin-polarized edge states in graphene nanoribbons in the quantum spin Hall and quantum anomalous Hall regimes

Authors: Nezhat Pournaghavi, Cecilia Holmqvist, Anna Pertsova, Carlo Canali

Abstract: Using the non-equilibrium Green\noindent 's function method and the Keldysh formalism, we study the effects of spin-orbit interactions and time-reversal symmetry breaking exchange fields on non-equilibrium quantum transport in graphene armchair nanoribbons. We identify signatures of the quantum spin Hall (QSH) and the quantum anomalous Hall (QAH) phases in non-equilibrium edge transport by calcula… ▽ More Using the non-equilibrium Green\noindent 's function method and the Keldysh formalism, we study the effects of spin-orbit interactions and time-reversal symmetry breaking exchange fields on non-equilibrium quantum transport in graphene armchair nanoribbons. We identify signatures of the quantum spin Hall (QSH) and the quantum anomalous Hall (QAH) phases in non-equilibrium edge transport by calculating the spin-resolved real space charge density and local currents at the nanoribbon edges. We find that the QSH phase, which is realized in a system with intrinsic spin-orbit coupling, is characterized by chiral counter-propagating local spin currents summing up to a net charge flow with opposite spin polarization at the edges. In the QAH phase, emerging in the presence of the Rashba spin-orbit coupling and a ferromagnetic exchange field, two chiral edge channels with opposite spins propagate in the same direction at each edge, generating an unpolarized charge current and a quantized Hall conductance $G = 2 e^2/h$. Increasing the intrinsic spin-orbit coupling causes a transition from the QAH to the QSH phase, evinced by characteristic changes in the non-equilibrium edge transport. In contrast, an antiferromagnetic exchange field can coexist with a QSH phase, but can never induce a QAH phase due to a symmetry that combines time-reversal and sublattice translational symmetry. △ Less

Submitted 18 July, 2018; v1 submitted 7 May, 2018; originally announced May 2018.

Report number: pssr.201800210

Journal ref: Phys. Status Solidi RRL. 2018 doi:10.1002/pssr.201800210

Systematics of electronic and magnetic properties in the transition metal doped Sb$_2$Te$_3$ quantum anomalous Hall platform

Authors: M F. Islam, C. M. Canali, A. Pertsova, A. Balatsky, S. K. Mahatha, C. Carbone, A. Barla, K. A. Kokh, O. E. Tereshchenk, E. Jiménez, N. B. Brookes, P. Gargiani, M. Valvidares, S. Schatz, T. R. F. Peixoto, H. Bentmann, F. Reinert, J. Jung, T. Bathon, K. Fauth, M. Bode, P. Sessi

Abstract: The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (… ▽ More The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state. △ Less

Submitted 14 February, 2018; originally announced February 2018.

Comments: 40 pages, 13 figures

Journal ref: Phys. Rev. B 97, 155429 (2018)

Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties

Authors: J. Sadowski, S. Kret, A. Siusys, T. Wojciechowski, K. Gas, M. F. Islam, C. M. Canali, M. Sawicki

Abstract: (Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a… ▽ More (Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a proper selection/choice of both the core and outer shell materials. △ Less

Submitted 15 December, 2017; originally announced December 2017.

Comments: 13 pages, 7 figures

Journal ref: Nanoscale, 2017, 9, 2129

Spin-electric Berry phase shift in triangular molecular magnets

Authors: Vahid Azimi Mousolou, Carlo M. Canali, Erik Sjöqvist

Abstract: We propose a Berry phase effect on the chiral degrees of freedom of a triangular magnetic molecule. The phase is induced by adiabatically varying an external electric field in the plane of the molecule via a spin-electric coupling mechanism present in these frustrated magnetic molecules. The Berry phase effect depends on spin-orbit interaction splitting and on the electric dipole moment. By varyin… ▽ More We propose a Berry phase effect on the chiral degrees of freedom of a triangular magnetic molecule. The phase is induced by adiabatically varying an external electric field in the plane of the molecule via a spin-electric coupling mechanism present in these frustrated magnetic molecules. The Berry phase effect depends on spin-orbit interaction splitting and on the electric dipole moment. By varying the amplitude of the applied electric field, the Berry phase difference between the two spin states can take any arbitrary value between zero and $π$, which can be measured as a phase shift between the two chiral states by using spin-echo techniques. Our result can be used to realize an electric field induced geometric phase-shift gate acting on a chiral qubit encoded in the ground state manifold of the triangular magnetic molecule. △ Less

Submitted 21 December, 2016; v1 submitted 7 September, 2016; originally announced September 2016.

Comments: Figures 3 and 4 have been updated. Some additional material. Journal reference added. arXiv admin note: substantial text overlap with arXiv:1512.01636

Journal ref: Phys. Rev. B 94, 235423 (2016)

Quantum Hall Edge States in Topological Insulator Nanoribbons

Authors: A. Pertsova, C. M. Canali, A. H. MacDonald

Abstract: We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calcul… ▽ More We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit non-zero longitudinal resistance in samples with accurately quantized Hall conductances. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 121409 (2016)

Effects of short-range electron-electron interactions in doped graphene

Authors: Faluke Aikebaier, Anna Pertsova, Carlo M. Canali

Abstract: We study theoretically the effects of short-range electron-electron interactions on the electronic structure of graphene, in the presence of single substitutional impurities. Our computational approach is based on the $π$ orbital tight-binding approximation for graphene, with the electron-electron interactions treated self-consistently at the level of the mean-field Hubbard model. We compare expli… ▽ More We study theoretically the effects of short-range electron-electron interactions on the electronic structure of graphene, in the presence of single substitutional impurities. Our computational approach is based on the $π$ orbital tight-binding approximation for graphene, with the electron-electron interactions treated self-consistently at the level of the mean-field Hubbard model. We compare explicitly non-interacting and interacting cases with varying interaction strength and impurity potential strength. We focus in particular on the interaction-induced modifications in the local density of states around the impurity, which is a quantity that can be directly probed by scanning tunneling spectroscopy of doped graphene. We find that the resonant character of the impurity states near the Fermi level is enhanced by the interactions. Furthermore, the size of the energy gap, which opens at high-symmetry points of the Brillouin zone of the supercell upon do**, is significantly affected by the interactions. The details of this effect depend subtly on the supercell geometry. We use a perturbative model to explain these features and find quantitative agreement with numerical results. △ Less

Submitted 29 January, 2015; originally announced January 2015.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 92, 155420 (2015)

Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies

Authors: M. R. Mahani, A. H. MacDonald, C. M. Canali

Abstract: We investigate theoretically the effect of nearby As (arsenic) vacancies on the magnetic properties of substitutional Mn (manganese) impurities on the GaAs (110) surface, using a microscopic tight-binding model which captures the salient features of the electronic structure of both types of defects in GaAs. The calculations show that the binding energy of the Mn-acceptor is essentially unaffected… ▽ More We investigate theoretically the effect of nearby As (arsenic) vacancies on the magnetic properties of substitutional Mn (manganese) impurities on the GaAs (110) surface, using a microscopic tight-binding model which captures the salient features of the electronic structure of both types of defects in GaAs. The calculations show that the binding energy of the Mn-acceptor is essentially unaffected by the presence of a neutral As vacancy, even at the shortest possible ${\rm V}_{\rm As}$--Mn separation. On the other hand, in contrast to a simple tip-induced-band-bending theory and in agreement with experiment, for a positively charged As vacancy the Mn-acceptor binding energy is significantly reduced as the As vacancy is brought closer to the Mn impurity. For two Mn impurities aligned ferromagnetically, we find that nearby charged As vacancies enhance the energy level splitting of the associated coupled acceptor levels, leading to an increase of the effective exchange interaction. Neutral vacancies leave the exchange splitting unchanged. Since it is experimentally possible to switch reversibly between the two charge states of the vacancy, such a local electric manipulation of the magnetic dopants could result in an efficient real-time control of their exchange interaction. △ Less

Submitted 12 December, 2014; originally announced December 2014.

Comments: 13 pages, 15 figures, Journal

Journal ref: Phys. Rev. B 92, 045304, 2015

Thin films of a three-dimensional topological insulator in a strong magnetic field: a microscopic study

Authors: A. Pertsova, C. M. Canali, A. H. MacDonald

Abstract: The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated by performing magnetic bandstructure calculations for a realistic multi-band tight-binding model. Several crucial features of Landau quantization in a realistic three-dimensional topological insulator are revealed. The $n=0$ Landau level is absent in ultra-thin films, in agreement with experiment. I… ▽ More The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated by performing magnetic bandstructure calculations for a realistic multi-band tight-binding model. Several crucial features of Landau quantization in a realistic three-dimensional topological insulator are revealed. The $n=0$ Landau level is absent in ultra-thin films, in agreement with experiment. In films with a crossover thickness of five quintuple layers, there is a signature of the $n=0$ level, whose overall trend as a function of magnetic field matches the established low-energy effective-model result. Importantly, we find a field-dependent splitting and a strong spin-polarization of the $n=0$ level which can be measured experimentally at reasonable field strengths. Our calculations show mixing between the surface and bulk Landau levels which causes the character of levels to evolve with magnetic field. △ Less

Submitted 27 February, 2015; v1 submitted 4 November, 2014; originally announced November 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91, 075430 (2015)

Spin dynamics of Mn impurities and their bound acceptors in GaAs

Authors: M. R. Mahani, A. Pertsova, C. M. Canali

Abstract: We present results of tight-binding spin-dynamics simulations of individual and pairs of substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical scheme for spin dynamics, with coupled equations of motions for the quantum subsystem, representing the host, and the localized spins of magnetic dopants, which are treated classically. In the case of a single Mn impurit… ▽ More We present results of tight-binding spin-dynamics simulations of individual and pairs of substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical scheme for spin dynamics, with coupled equations of motions for the quantum subsystem, representing the host, and the localized spins of magnetic dopants, which are treated classically. In the case of a single Mn impurity, we calculate explicitly the time evolution of the Mn spin and the spins of nearest-neighbors As atoms, where the acceptor (hole) state introduced by the Mn dopant resides. We relate the characteristic frequencies in the dynamical spectra to the two dominant energy scales of the system, namely the spin-orbit interaction strength and the value of the p-d exchange coupling between the impurity spin and the host carriers. For a pair of Mn impurities, we find signatures of the indirect (carrier-mediated) exchange interaction in the time evolution of the impurity spins. Finally, we examine temporal correlations between the two Mn spins and their dependence on the exchange coupling and spin-orbit interaction strength, as well as on the initial spin-configuration and separation between the impurities. Our results provide insight into the dynamic interaction between localized magnetic impurities in a nano-scaled magnetic-semiconductor sample, in the extremely dilute (solotronics) regime. △ Less

Submitted 22 October, 2014; originally announced October 2014.

Comments: 12 pages, 11 figures, journal

Journal ref: Phys. Rev. B 90, 245406 (2014)

Interplay between Mn-acceptor state and Dirac surface states in Mn-doped Bi$_2$Se$_3$ topological insulator

Authors: M. R. Mahani, A. Pertsova, M. Fhokru Islam, C. M. Canali

Abstract: We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with ex… ▽ More We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with experiments, we find evidence that the Mn ion is in the ${+2}$-valence state and introduces an acceptor in the bulk band gap. The Mn-acceptor has predominantly $p$-character, and is localized mainly around the Mn impurity and its nearest-neighbor Se atoms. Its electronic structure and spin-polarization are determined by the hybridization between the Mn $d$-levels and the $p$-levels of surrounding Se atoms, which is strongly affected by electronic correlations at the Mn site. The opening of the gap at the Dirac point depends crucially on the quasi-resonant coupling and the strong real-space overlap between the spin-chiral surface states and the mid-gap spin-polarized Mn-acceptor states. △ Less

Submitted 12 November, 2014; v1 submitted 18 June, 2014; originally announced June 2014.

Comments: 5 pages, 5 figures, journal

Journal ref: Physical Review B 90, 195441 (2014)

Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface

Authors: M R Mahani, A Pertsova, C M Canali

Abstract: Using a microscopic finite-cluster tight-binding model, we investigate the trend of the magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity positioned in the vicinity of the (110) GaAs surface,We present results of calculations for large cluster sizes, containing approximately 104 atoms, which have not been investigated so far. Our calculations demonstrate th… ▽ More Using a microscopic finite-cluster tight-binding model, we investigate the trend of the magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity positioned in the vicinity of the (110) GaAs surface,We present results of calculations for large cluster sizes, containing approximately 104 atoms, which have not been investigated so far. Our calculations demonstrate that the anisotropy energy of a Mn dopant in bulk GaAs found to be non-zero in previous tight-binding calculations, is purely a finite size effect, and it vanishes as the inverse cluster size. In contrast to this, we find that the splitting of the three in-gap Mn acceptor energy levels converges to a finite value in the limit of infinite cluster size. For a Mn in bulk GaAs this feature is related to the nature of the mean-field treatment of the coupling between the impurity and its nearest neighbors atoms. Moreover, we calculate the trend of the anisotropy energy in the sublayers, as the Mn dopant is moved away from the surface towards the center of the cluster. Here the use of large cluster sizes allows us to position the impurity in deeper sublayers below the surface, compared to previous calculations. In particular, we show that the anisotropy energy increases up to the fifth sublayer and then decreases as the impurity is moved further away from the surface, approaching its bulk value. The present study provides important insight for experimental control and manipulation of the electronic and magnetic properties of individual Mn dopants at the semiconductor surface by means of advanced scanning tunneling microscopy techniques. △ Less

Submitted 16 April, 2014; v1 submitted 13 February, 2014; originally announced February 2014.

Comments: 18 pages, 8 figures, Journal. arXiv admin note: text overlap with arXiv:1401.0703

Journal ref: J. Phys.: Condens. Matter 26 394006 2014

Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface

Authors: M. R. Mahani, M. Fhokrul Islam, A. Pertsova, C. M. Canali

Abstract: Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[\rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including ex… ▽ More Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[\rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including explicitly the impurity $d$-electrons are in good agreement with approaches that treat the spin of the impurity as an effective classical vector. For the case of Fe, where both the neutral isoelectronic $[\rm Fe^{3+}]^0$ and the ionized $[\rm Fe^{2+}]^-$ states are relevant to address scanning tunneling microscopy (STM) experiments, the inclusion of $d$-orbitals is essential. We find that the in-gap electronic structure of Fe impurities is significantly modified by surface effects. For the neutral acceptor state $[{\rm Fe}^{2+}, h]^0$, the magnetic-anisotropy dependence on the impurity sublayer resembles the case of $[{\rm Mn}^{2+}, h]^0$. In contrast, for $[{\rm Fe}^{3+}]^{0}$ electronic configuration the magnetic anisotropy behaves differently and it is considerably smaller. For this state we predict that it is possible to manipulate the Fe moment, e.g. by an external magnetic field, with detectable consequences in the local density of states probed by STM. △ Less

Submitted 17 April, 2014; v1 submitted 3 January, 2014; originally announced January 2014.

Comments: 16 pages, 19 figures, Journal

Journal ref: Physical Review B 89, 165408 (2014)

Probing the wavefunction of the surface states in Bi$_2$Se$_3$ topological insulator: a realistic tight-binding approach

Authors: A. Pertsova, C. M. Canali

Abstract: We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of spin-orbit interaction on the electronic structure of the bulk and of a slab with finite thickness is investigated. In particular, a phenomenological criterion… ▽ More We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of spin-orbit interaction on the electronic structure of the bulk and of a slab with finite thickness is investigated. In particular, a phenomenological criterion of band inversion is formulated for both bulk and slab, based on the calculated atomic- and orbital-projections of the wavefunctions, associated with valence and conduction band extrema at the center of the Brillouin zone. We carry out a thorough analysis of the calculated bandstructures of slabs with varying thickness, where surface states are identified using a quantitative criterion according to their spatial distribution. The thickness-dependent energy gap, attributed to inter-surface interaction, and the emergence of gapless surface states for slabs above a critical thickness are investigated. We map out the transition to the infinite-thickness limit by calculating explicitly the modifications in the spatial distribution and spin-character of the surface states wavefunction with increasing the slab thickness. Our numerical analysis shows that the system must be approximately forty quintuple-layers thick to exhibit completely decoupled surface states, localized on the opposite surfaces. These results have implications on the effect of external perturbations on the surface states near the Dirac point. △ Less

Submitted 4 November, 2013; originally announced November 2013.

Comments: 11 pages, 11 figures

Journal ref: New J. Phys. 16, 063022 (2014)

Cotunneling signatures of Spin-Electric coupling in frustrated triangular molecular magnets

Authors: J. F. Nossa, C. M. Canali

Abstract: The ground state of frustrated (antiferromagnetic) triangular molecular magnets is characterized by two total-spin $S =1/2$ doublets with opposite chirality. According to a group theory analysis [M. Trif \textit{et al.}, Phys. Rev. Lett. \textbf{101}, 217201 (2008)] an external electric field can efficiently couple these two chiral spin states, even when the spin-orbit interaction (SOI) is absent.… ▽ More The ground state of frustrated (antiferromagnetic) triangular molecular magnets is characterized by two total-spin $S =1/2$ doublets with opposite chirality. According to a group theory analysis [M. Trif \textit{et al.}, Phys. Rev. Lett. \textbf{101}, 217201 (2008)] an external electric field can efficiently couple these two chiral spin states, even when the spin-orbit interaction (SOI) is absent. The strength of this coupling, $d$, is determined by an off-diagonal matrix element of the dipole operator, which can be calculated by \textit{ab-initio} methods [M. F. Islam \textit{et al.}, Phys. Rev. B \textbf{82}, 155446 (2010)]. In this work we propose that Coulomb-blockade transport experiments in the cotunneling regime can provide a direct way to determine the spin-electric coupling strength. Indeed, an electric field generates a $d$-dependent splitting of the ground state manifold, which can be detected in the inelastic cotunneling conductance. Our theoretical analysis is supported by master-equation calculations of quantum transport in the cotunneling regime. We employ a Hubbard-model approach to elucidate the relationship between the Hubbard parameters $t$ and $U$, and the spin-electric coupling constant $d$. This allows us to predict the regime in which the coupling constant $d$ can be extracted from experiment. △ Less

Submitted 12 March, 2014; v1 submitted 2 August, 2013; originally announced August 2013.

Journal ref: Phys. Rev. B 89, 235435

Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field

Authors: M. Bozkurt, M. R. Mahani, P. Studer, J. -M. Tang, S. R. Schofield, N. J. Curson, M. E Flatte, A. Yu. Silov, C. F. Hirjibehedin, C. M. Canali, P. M. Koenraad

Abstract: We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. T… ▽ More We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface. △ Less

Submitted 22 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

Comments: None

Journal ref: Physical Review B 88, 205203 (2013)

Electric control of a $\{Fe_4\}$ single-molecule magnet in a single-electron transistor

Authors: J. F. Nossa, M. Fhokrul Islam, C. M. Canali, M. R. Pederson

Abstract: Using first-principles methods we study theoretically the properties of an individual $\{Fe_4\}$ single-molecule magnet (SMM) attached to metallic leads in a single-electron transistor geometry. We show that the conductive leads do not affect the spin ordering and magnetic anisotropy of the neutral SMM. On the other hand, the leads have a strong effect on the anisotropy of the charged states of th… ▽ More Using first-principles methods we study theoretically the properties of an individual $\{Fe_4\}$ single-molecule magnet (SMM) attached to metallic leads in a single-electron transistor geometry. We show that the conductive leads do not affect the spin ordering and magnetic anisotropy of the neutral SMM. On the other hand, the leads have a strong effect on the anisotropy of the charged states of the molecule, which are probed in Coulomb blockade transport. Furthermore, we demonstrate that an external electric potential, modeling a gate electrode, can be used to manipulate the magnetic properties of the system. For a charged molecule, by localizing the extra charge with the gate voltage closer to the magnetic core, the anisotropy magnitude and spin ordering converges to the values found for the isolated $\{Fe_4\}$ SMM. We compare these findings with the results of recent quantum transport experiments in three-terminal devices. △ Less

Submitted 13 March, 2013; originally announced March 2013.

Journal ref: Physical Review B 88, 224423 (2013)

First-principle studies of the spin-orbit and the Dzyaloshinskii-Moriya interactions in the \{Cu$_3$\} single-molecule magnet

Authors: J. F. Nossa, M. F. Islam, C. M. Canali, M. R. Pederson

Abstract: Frustrated triangular molecule magnets such as \{Cu$_3$\} are characterized by two degenerate S=1/2 ground-states with opposite chirality. Recently it has been proposed theoretically [PRL {\bf 101}, 217201 (2008)] and verified by {\it ab-initio} calculations [PRB {\bf 82}, 155446 (2010)] that an external electric field can efficiently couple these two chiral spin states, even in the absence of spi… ▽ More Frustrated triangular molecule magnets such as \{Cu$_3$\} are characterized by two degenerate S=1/2 ground-states with opposite chirality. Recently it has been proposed theoretically [PRL {\bf 101}, 217201 (2008)] and verified by {\it ab-initio} calculations [PRB {\bf 82}, 155446 (2010)] that an external electric field can efficiently couple these two chiral spin states, even in the absence of spin-orbit interaction (SOI). The SOI is nevertheless important, since it introduces a splitting in the ground-state manifold via the Dzyaloshinskii-Moriya interaction. In this paper we present a theoretical study of the effect of the SOI on the chiral states within spin density functional theory. We employ a recently-introduced Hubbard model approach to elucidate the connection between the SOI and the Dzyaloshinskii-Moriya interaction. This allows us to express the Dzyaloshinskii-Moriya interaction constant $D$ in terms of the microscopic Hubbard model parameters, which we calculate from first-principles. The small splitting that we find for the \{Cu$_3$\} chiral state energies ($Δ\approx 0.02$ meV) is consistent with experimental results. The Hubbard model approach adopted here also yields a better estimate of the isotropic exchange constant than the ones obtained by comparing total energies of different spin configurations. The method used here for calculating the DM interaction unmasks its simple fundamental origin which is the off-diagonal spin-orbit interaction between the generally multireference vacuum state and single-electron excitations out of those states. △ Less

Submitted 13 November, 2011; originally announced November 2011.

Magnetic properties of Mn impurities on GaAs (110) surfaces

Authors: M. Fhokrul Islam C. M. Canali

Abstract: We present a computational study of individual and pairs of substitutional Mn impurities on the (110) surface of GaAs samples based on density functional theory. We focus on the anisotropy properties of these magnetic centers and their dependence on on-site correlations, spin-orbit interaction and surface-induced symmetry-breaking effects. For a Mn impurity on the surface, the associated acceptor-… ▽ More We present a computational study of individual and pairs of substitutional Mn impurities on the (110) surface of GaAs samples based on density functional theory. We focus on the anisotropy properties of these magnetic centers and their dependence on on-site correlations, spin-orbit interaction and surface-induced symmetry-breaking effects. For a Mn impurity on the surface, the associated acceptor-hole wavefunction tends to be more localized around the Mn than for an impurity in bulk GaAs. The magnetic anisotropy energy for isolated Mn impurities is of the order of 1 meV, and can be related to the anisotropy of the orbital magnetic moment of the Mn acceptor hole. Typically Mn pairs have their spin magnetic moments parallel aligned, with an exchange energy that strongly depends on the pair orientation on the surface. The spin magnetic moment and exchange energies for these magnetic entities are not significantly modified by the spin-orbit interaction, but are more sensitive to on-site correlations. Correlations in general reduce the magnetic anisotropy for most of the ferromagnetic Mn pairs. △ Less

Submitted 26 August, 2011; v1 submitted 17 August, 2011; originally announced August 2011.

Comments: 13 pages, 8 figures

First-principle studies of spin-electric coupling in a $\{Cu_3\}$ single molecular magnet

Authors: M. Fhokrul Islam, Javier F. Nossa, Carlo M. Canali, Mark Pederson

Abstract: We report on a study of the electronic and magnetic properties of the triangular antiferromagnetic $\{Cu_3\}$ single-molecule magnet, based on spin density functional theory. Our calculations show that the low-energy magnetic properties are correctly described by an effective three-site spin $s=1/2$ Heisenberg model, with an antiferromagnetic exchange coupling $J \approx 5$ meV. The ground state m… ▽ More We report on a study of the electronic and magnetic properties of the triangular antiferromagnetic $\{Cu_3\}$ single-molecule magnet, based on spin density functional theory. Our calculations show that the low-energy magnetic properties are correctly described by an effective three-site spin $s=1/2$ Heisenberg model, with an antiferromagnetic exchange coupling $J \approx 5$ meV. The ground state manifold of the model is composed of two degenerate spin $S=1/2$ doublets of opposite chirality. Due to lack of inversion symmetry in the molecule these two states are coupled by an external electric field, even when spin-orbit interaction is absent. The spin-electric coupling can be viewed as originating from a modified exchange constant $δJ$ induced by the electric field. We find that the calculated transition rate between the chiral states yields an effective electric dipole moment $d = 3.38\times 10^{-33} {\rm C\ m} \approx e 10^{-4}a$, where $a$ is the Cu separation. For external electric fields ${\varepsilon} \approx 10^8$ V/m this value corresponds to a Rabi time $τ\approx 1$ ns and to a $δJ$ of the order of a few $μ$eV. △ Less

Submitted 6 August, 2010; originally announced August 2010.

Comments: 10 pages, 10 figures

Chern number spins of Mn acceptor magnets in GaAs

Authors: T. O. Strandberg, C. M. Canali, A. H. MacDonald

Abstract: We determine the effective total spin $J$ of local moments formed from acceptor states bound to Mn ions in GaAs by evaluating their magnetic Chern numbers. We find that when individual Mn atoms are close to the sample surface, the total spin changes from $J = 1$ to $J = 2$, due to quenching of the acceptor orbital moment. For Mn pairs in bulk, the total $J$ depends on the pair orientation in the G… ▽ More We determine the effective total spin $J$ of local moments formed from acceptor states bound to Mn ions in GaAs by evaluating their magnetic Chern numbers. We find that when individual Mn atoms are close to the sample surface, the total spin changes from $J = 1$ to $J = 2$, due to quenching of the acceptor orbital moment. For Mn pairs in bulk, the total $J$ depends on the pair orientation in the GaAs lattice and on the separation between the Mn atoms. We point out that Berry curvature variation as a function of local moment orientation can profoundly influence the quantum spin dynamics of these magnetic entities. △ Less

Submitted 2 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Magnetic interactions of substitutional Mn pairs in GaAs

Authors: T. O. Strandberg, C. M. Canali, A. H. MacDonald

Abstract: We employ a kinetic-exchange tight-binding model to calculate the magnetic interaction and anisotropy energies of a pair of substitutional Mn atoms in GaAs as a function of their separation distance and direction. We find that the most energetically stable configuration is usually one in which the spins are ferromagnetically aligned along the vector connecting the Mn atoms. The ferromagnetic con… ▽ More We employ a kinetic-exchange tight-binding model to calculate the magnetic interaction and anisotropy energies of a pair of substitutional Mn atoms in GaAs as a function of their separation distance and direction. We find that the most energetically stable configuration is usually one in which the spins are ferromagnetically aligned along the vector connecting the Mn atoms. The ferromagnetic configuration is characterized by a splitting of the topmost unoccupied acceptor levels, which is visible in scanning tunneling microscope studies when the pair is close to the surface and is strongly dependent on pair orientation. The largest acceptor splittings occur when the Mn pair is oriented along the <110> symmetry direction, and the smallest when they are oriented along <100>. We show explicitly that the acceptor splitting is not simply related to the effective exchange interaction between the Mn local moments. The exchange interaction constant is instead more directly related to the width of the distribution of all impurity levels -- occupied and unoccupied. When the Mn pair is at the (110) GaAs surface, both acceptor splitting and effective exchange interaction are very small except for the smallest possible Mn separation. △ Less

Submitted 19 January, 2010; v1 submitted 17 January, 2010; originally announced January 2010.

Comments: 25 figures

Journal ref: Phys. Rev. B 81, 054401 (2010)

Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

Authors: T. O. Strandberg, C. M. Canali, A. H. MacDonald

Abstract: Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor… ▽ More Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor wave function is strongly anisotropic in space and its detailed features depend on the depth of the sublayer in which the Mn atom is located. The local-density-of-states (LDOS) on the (110) surface associated with the acceptor level is more sensitive to the direction of the Mn magnetic moment when the Mn atom is located further below the surface. We show that the total magnetic anisotropy energy of the system is due almost entirely to the dependence of the acceptor level energy on Mn spin orientation, and that this quantity is strongly dependent on the depth of the Mn atom. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 14 pages, 13 figures

Journal ref: Phys. Rev. B 80, 024425 (2009)

Theory of Tunneling Spectroscopy in a Mn$_{12}$ Single-Electron Transistor by Density-Functional Theory Methods

Authors: L. Michalak, C. M. Canali, M. R. Pederson, M. Paulsson, V. G. Benza

Abstract: We consider tunneling transport through a Mn$_{12}$ molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wavefunctions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin… ▽ More We consider tunneling transport through a Mn$_{12}$ molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wavefunctions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin multiplets, separated by an energy on the order of the magnetic anisotropy. The energy splitting of the spin multiplets and the spatial part of their many-body wave functions, describing the orbital degrees of freedom of the excess charge, strongly affect the electronic transport, and can lead to negative differential conductance. △ Less

Submitted 7 February, 2010; v1 submitted 4 December, 2008; originally announced December 2008.

Comments: 4 pages, 3 figures, a revised version with minor changes

Journal ref: Phys. Rev. Lett. 104, 017202 (2010)

Chern-number spin Hamiltonians for magnetic nano-clusters by DFT methods

Authors: T. O. Strandberg, C. M. Canali, A. H. MacDonald

Abstract: Combining field-theoretical methods and ab-initio calculations, we construct an effective Hamiltonian with a single giant-spin degree of freedom, capable of the describing the low-energy spin dynamics of ferromagnetic metal nanoclusters consisting of up to a few tens of atoms. In our procedure, the magnetic moment direction of the Kohn-Sham SDFT wave-function is constrained by means of a penalty… ▽ More Combining field-theoretical methods and ab-initio calculations, we construct an effective Hamiltonian with a single giant-spin degree of freedom, capable of the describing the low-energy spin dynamics of ferromagnetic metal nanoclusters consisting of up to a few tens of atoms. In our procedure, the magnetic moment direction of the Kohn-Sham SDFT wave-function is constrained by means of a penalty functional, allowing us to explore the entire parameter space of directions, and to extract the magnetic anisotropy energy and Berry curvature functionals. The average of the Berry curvature over all magnetization directions is a Chern number - a topological invariant that can only take on values equal to multiples of one half, representing the dimension of the Hilbert space of the effective spin system. The spin Hamiltonian is obtained by quantizing the classical anisotropy energy functional, after performing a change of variables to a constant Berry curvature space. The purpose of this article is to examine the impact of the topological effect from the Berry curvature on the low-energy total-spin-system dynamics. To this end, we study small transition metal clusters: Co$_{n}$ ($n=2,...,5$), Rh$_{2}$, Ni$_{2}$, Pd$_{2}$, Mn$_{x}$N$_{y}$, Co$_{3}$Fe$_{2}$. △ Less

Submitted 31 March, 2008; originally announced March 2008.

Comments: 19 pages, 13 figures

Journal ref: Phys. Rev. B 77, 174416 (2008)

Transition-metal dimers and physical limits on magnetic anisotropy

Authors: Tor O. Strandberg, Carlo. M. Canali, Allan H. MacDonald

Abstract: Recent advances in nanoscience have raised interest in the minimum bit size required for classical information storage, i.e. for bistability with suppressed quantum tunnelling and energy barriers that exceed ambient temperatures. In the case of magnetic information storage much attention has centred on molecular magnets[1] with bits consisting of ~ 100 atoms, magnetic uniaxial anisotropy energy… ▽ More Recent advances in nanoscience have raised interest in the minimum bit size required for classical information storage, i.e. for bistability with suppressed quantum tunnelling and energy barriers that exceed ambient temperatures. In the case of magnetic information storage much attention has centred on molecular magnets[1] with bits consisting of ~ 100 atoms, magnetic uniaxial anisotropy energy barriers ~ 50 K, and very slow relaxation at low temperatures. In this article we draw attention to the remarkable magnetic properties of some transition metal dimers which have energy barriers approaching ~ 500 K with only two atoms. The spin dynamics of these ultra small nanomagnets is strongly affected by a Berry phase which arises from quasi-degeneracies at the electronic Highest Occupied Molecular Orbital (HOMO) energy. In a giant spin-approximation, this Berry phase makes the effective reversal barrier thicker. [1] Gatteschi, D., Sessoli, R. & Villain, J. Molecular Nanomagnets. (Oxford, New York 2006). △ Less

Submitted 24 October, 2007; v1 submitted 23 March, 2007; originally announced March 2007.

Comments: 14 pages, 1 figure

Journal ref: Nature Materials 6, 648 - 651 (2007)

Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors

Authors: R. S. Liu, H. Pettersson, L. Michalak, C. M. Canali, D. Suyatin, L. Samuelson

Abstract: We report on magnetotransport investigations of nano-scaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2K. Magnetotransport measurements carried out at 1.8K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which we interpret in terms of a switching mechanism dri… ▽ More We report on magnetotransport investigations of nano-scaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2K. Magnetotransport measurements carried out at 1.8K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which we interpret in terms of a switching mechanism driven by the shape anisotropy of the central wire-like Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which we tentatively attribute to excitation of magnons in the central island. △ Less

Submitted 15 February, 2007; originally announced February 2007.

Comments: 12 pages (including 4 figures). Accepted for publishing on APL

Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

Authors: R. S. Liu, H. Pettersson, L. Michalak, C. M. Canali, L. Samuelson

Abstract: We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing… ▽ More We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. Using an atomic force microscope with specially designed software, a single non-magnetic Au nanodisc is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real-time while the Au disc is manipulated step-by-step with Angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disc. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few ns on the spin-relaxation time for electrons in the Au disc. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the SETs. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum TMR of 10%, from which we deduced a spin-polarization of about 22% in the Ni electrodes. △ Less

Submitted 14 December, 2006; originally announced December 2006.

Comments: 10 pages, 5 figures

Electron-magnon coupling and nonlinear tunneling transport in magnetic nanoparticles

Authors: L. Michalak, C. M. Canali, V. G. Benza

Abstract: We present a theory of single-electron tunneling transport through a ferromagnetic nanoparticle in which particle-hole excitations are coupled to spin collective modes. The model employed to describe the interaction between quasiparticles and collective excitations captures the salient features of a recent microscopic study. Our analysis of nonlinear quantum transport in the regime of weak coupl… ▽ More We present a theory of single-electron tunneling transport through a ferromagnetic nanoparticle in which particle-hole excitations are coupled to spin collective modes. The model employed to describe the interaction between quasiparticles and collective excitations captures the salient features of a recent microscopic study. Our analysis of nonlinear quantum transport in the regime of weak coupling to the external electrodes is based on a rate-equation formalism for the nonequilibrium occupation probability of the nanoparticle many-body states. For strong electron-boson coupling, we find that the tunneling conductance as a function of bias voltage is characterized by a large and dense set of resonances. Their magnetic field dependence in the large-field regime is linear, with slopes of the same sign. Both features are in agreement with recent tunneling experiments. △ Less

Submitted 23 January, 2007; v1 submitted 29 December, 2005; originally announced December 2005.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 97, 096804 (2006)

Magnetic Anisotropy of Isolated Cobalt Nanoplatelets

Authors: T. O. Strandberg, C. M. Canali, A. H. MacDonald

Abstract: Motivated in part by experiments performed by M.H. Pan et al. (nanoletters, v.5, p 83, 2005), we have undertaken a theoretical study of the the magnetic properties of two-monolayer thick Co nanoplatelets with an equilateral triangular shape. The analysis is carried out using a microscopic Slater-Koster tight-binding model with atomic exchange and spin-orbit interactions designed to realistically… ▽ More Motivated in part by experiments performed by M.H. Pan et al. (nanoletters, v.5, p 83, 2005), we have undertaken a theoretical study of the the magnetic properties of two-monolayer thick Co nanoplatelets with an equilateral triangular shape. The analysis is carried out using a microscopic Slater-Koster tight-binding model with atomic exchange and spin-orbit interactions designed to realistically capture the salient magnetic features of large nanoclusters containing up to 350 atoms. Two different truncations of the FCC lattice are studied, in which the nanoplatelet surface is aligned parallel to the FCC (111) and (001)crystal planes respectively. We find that the higher coordination number in the (111) truncated crystal is more likely to reproduce the perpendicular easy direction found in experiment. Qualitatively, the most important parameter governing the anisotropy of the model is found to be the value of the intra-atomic exchange integral J. If we set the value of J near the bulk value in order to reproduce the experimentally observed magnitude of the magnetic moments, we find both quasi-easy-planes and perpendicular easy directions. At larger values of J we find that the easy-axis of magnetization is perpendicular to the surface, and the value of the magnetic anisotropy energy per atom is larger. The possible role of hybridization with substrate surface states in the experimental systems is discussed. △ Less

Submitted 2 February, 2006; v1 submitted 20 December, 2005; originally announced December 2005.

Comments: 15 pages, 13 figures

Journal ref: Physical Review B 73, 144415 (2006)

Landau-Zener quantum tunneling in disordered nanomagnets

Authors: V. G. Benza, C. M. Canali, G. Strini

Abstract: We study Landau-Zener macroscopic quantum transitions in ferromagnetic metal nanoparticles containing on the order of 100 atoms. The model that we consider is described by an effective giant-spin Hamiltonian, with a coupling to a random transverse magnetic field mimicking the effect of quasiparticle excitations and structural disorder on the gap structure of the spin collective modes. We find di… ▽ More We study Landau-Zener macroscopic quantum transitions in ferromagnetic metal nanoparticles containing on the order of 100 atoms. The model that we consider is described by an effective giant-spin Hamiltonian, with a coupling to a random transverse magnetic field mimicking the effect of quasiparticle excitations and structural disorder on the gap structure of the spin collective modes. We find different types of time evolutions depending on the interplay between the disorder in the transverse field and the initial conditions of the system. In the absence of disorder, if the system starts from a low-energy state, there is one main coherent quantum tunneling event where the initial-state amplitude is completely depleted in favor of a few discrete states, with nearby spin quantum numbers; when starting from the highest excited state, we observe complete inversion of the magnetization through a peculiar ``backward cascade evolution''. In the random case, the disorder-averaged transition probability for a low-energy initial state becomes a smooth distribution, which is nevertheless still sharply peaked around one of the transitions present in the disorder-free case. On the other hand, the coherent backward cascade phenomenon turns into a damped cascade with frustrated magnetic inversion. △ Less

Submitted 22 September, 2004; originally announced September 2004.

Comments: 21 pages, 7 figures, to be published in Phys.Rev.B

Orbital and spin contributions to the $g$-tensors in metal nanoparticles

Authors: A. Cehovin, C. M. Canali, A. H. MacDonald

Abstract: We present a theoretical study of the mesoscopic fluctuations of $g$-tensors in a metal nanoparticle. The calculations were performed using a semi-realistic tight-binding model, which contains both spin and orbital contributions to the $g$-tensors. The results depend on the product of the spin-orbit scattering time $τ_{\textrm{\small so}}$ and the mean-level spacing $δ$, but are otherwise weakly… ▽ More We present a theoretical study of the mesoscopic fluctuations of $g$-tensors in a metal nanoparticle. The calculations were performed using a semi-realistic tight-binding model, which contains both spin and orbital contributions to the $g$-tensors. The results depend on the product of the spin-orbit scattering time $τ_{\textrm{\small so}}$ and the mean-level spacing $δ$, but are otherwise weakly affected by the specific shape of a {\it generic} nanoparticle. We find that the spin contribution to the $g$-tensors agrees with Random Matrix Theory (RMT) predictions. On the other hand, in the strong spin-orbit coupling limit $δτ_{\textrm{\small so}}/\hbar \to 0$, the orbital contribution depends crucially on the space character of the quasi-particle wavefunctions: it levels off at a small value for states of $d$ character but is strongly enhanced for states of $sp$ character. Our numerical results demonstrate that when orbital coupling to the field is included, RMT predictions overestimate the typical $g$-factor of orbitals that have dominant $d$-character. This finding points to a possible source of the puzzling discrepancy between theory and experiment. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 21 pages, 6 figures; accepted for publication in Physical Review B

Elementary Excitations of Ferromagnetic Metal Nanoparticles

Authors: A. Cehovin, C. M. Canali, A. H. MacDonald

Abstract: We present a theory of the elementary spin excitations in transition metal ferromagnet nanoparticles which achieves a unified and consistent quantum description of both collective and quasiparticle physics. The theory starts by recognizing the essential role played by spin-orbit interactions in determining the energies of ferromagnetic resonances in the collective excitation spectrum and the str… ▽ More We present a theory of the elementary spin excitations in transition metal ferromagnet nanoparticles which achieves a unified and consistent quantum description of both collective and quasiparticle physics. The theory starts by recognizing the essential role played by spin-orbit interactions in determining the energies of ferromagnetic resonances in the collective excitation spectrum and the strength of their coupling to low-energy particle-hole excitations. We argue that a crossover between Landau-damped ferromagnetic resonance and pure-state collective magnetic excitations occurs as the number of atoms in typical transition metal ferromagnet nanoparticles drops below approximately $10^4$, approximately where the single-particle level spacing, $δ$, becomes larger than, $\sqrtα E_{\rm res}$, where $E_{\rm res}$ is the ferromagnetic resonance frequency and $α$ is the Gilbert dam** parameter. We illustrate our ideas by studying the properties of semi-realistic model Hamiltonians, which we solve numerically for nanoparticles containing several hundred atoms. For small nanoparticles, we find one isolated ferromagnetic resonance collective mode below the lowest particle-hole excitation energy, at $E_{\rm res} \approx 0.1$ meV. The spectral weight of this pure excitation nearly exhausts the transverse dynamical susceptibility spectral weight. As $δ$ approaches $\sqrtα E_{\rm res}$, the ferromagnetic collective excitation is more likely to couple strongly with discrete particle-hole excitations. In this regime the distinction between the two types of excitations blurs. We discuss the significance of this picture for the interpretation of recent single-electron tunneling experiments. △ Less

Submitted 18 April, 2003; originally announced April 2003.

Comments: 19 pages, 13 figures

Chern Numbers for Spin Models of Transition Metal Nanomagnets

Authors: C. M. Canali, A. Cehovin, A. H. MacDonald

Abstract: We argue that ferromagnetic transition metal nanoparticles with fewer than approximately 100 atoms can be described by an effective Hamiltonian with a single giant spin degree of freedom. The total spin $S$ of the effective Hamiltonian is specified by a Berry curvature Chern number that characterizes the topologically non-trivial dependence of a nanoparticle's many-electron wavefunction on magne… ▽ More We argue that ferromagnetic transition metal nanoparticles with fewer than approximately 100 atoms can be described by an effective Hamiltonian with a single giant spin degree of freedom. The total spin $S$ of the effective Hamiltonian is specified by a Berry curvature Chern number that characterizes the topologically non-trivial dependence of a nanoparticle's many-electron wavefunction on magnetization orientation. The Berry curvatures and associated Chern numbers have a complex dependence on spin-orbit coupling in the nanoparticle and influence the semiclassical Landau-Liftshitz equations that describe magnetization orientation dynamics. △ Less

Submitted 26 March, 2003; originally announced March 2003.

Magnetization orientation dependence of the quasiparticle spectrum and hysteresis in ferromagnetic metal nanoparticles

Authors: A. Cehovin, C. M. Canali, A. H. MacDonald

Abstract: We use a microscopic Slater-Koster tight-binding model with short-range exchange and atomic spin-orbit interactions that realistically captures generic features of ferromagnetic metal nanoparticles to address the mesoscopic physics of magnetocrystalline anisotropy and hysteresis in nanoparticle quasiparticle excitation spectra. Our analysis is based on qualitative arguments supported by self-con… ▽ More We use a microscopic Slater-Koster tight-binding model with short-range exchange and atomic spin-orbit interactions that realistically captures generic features of ferromagnetic metal nanoparticles to address the mesoscopic physics of magnetocrystalline anisotropy and hysteresis in nanoparticle quasiparticle excitation spectra. Our analysis is based on qualitative arguments supported by self-consistent Hartree-Fock calculations for nanoparticles containing up to 260 atoms. Calculations of the total energy as a function of magnetization direction demonstrate that the magnetic anisotropy per atom fluctuates by several percents when the number of electrons in the particle changes by one, even for the largest particles we consider. Contributions of individual orbitals to the magnetic anisotropy are characterized by a broad distribution with a mean more than two orders of magnitude smaller than its variance and with no detectable correlations between anisotropy contribution and quasiparticle energy. We find that the discrete quasiparticle excitation spectrum of a nanoparticle displays a complex non-monotonic dependence on an external magnetic field, with abrupt jumps when the magnetization direction is reversed by the field, explaining recent spectroscopic studies of magnetic nanoparticles. Our results suggests the existence of a broad cross-over from a weak spin-orbit coupling to a strong spin-orbit coupling regime, occurring over the range from approximately 200- to 1000-atom nanoparticles. △ Less

Submitted 26 September, 2002; v1 submitted 26 September, 2002; originally announced September 2002.

Comments: 39 pages, 18 figures, to be published in Physical Review B

Theory of Tunneling Spectroscopy in Ferromagnetic Nanoparticles

Authors: C. M. Canali, A. H. MacDonald

Abstract: We present a theory of the low-energy excitations of a ferromagnetic metal nanoparticle. In addition to the particle-hole excitations, which occur in a paramagnetic metal nanoparticle, we predict a branch of excitations involving the magnetization-orientation collective coordinate. Tunneling matrix elements are in general sizable for several different collective states associated with the same b… ▽ More We present a theory of the low-energy excitations of a ferromagnetic metal nanoparticle. In addition to the particle-hole excitations, which occur in a paramagnetic metal nanoparticle, we predict a branch of excitations involving the magnetization-orientation collective coordinate. Tunneling matrix elements are in general sizable for several different collective states associated with the same band configuration. We point out that the average change in ground state spin per added electron differs from non-interacting quasiparticle expectations, and that the change in the spin-polarization, due to Zeeman coupling, is strongly influenced by Coulomb blockade physics. △ Less

Submitted 28 October, 2000; originally announced October 2000.

Comments: RevTex, 4 pages, 2 Postscript figures

Report number: LU-FTT-20-10

Journal ref: Phys.Rev.Lett. 85 (26): 5623-5626,(Dec. 25, 2000)