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Reducing the error rate of a superconducting logical qubit using analog readout information
Authors:
Hany Ali,
Jorge Marques,
Ophelia Crawford,
Joonas Majaniemi,
Marc Serra-Peralta,
David Byfield,
Boris Varbanov,
Barbara M. Terhal,
Leonardo DiCarlo,
Earl T. Campbell
Abstract:
Quantum error correction enables the preservation of logical qubits with a lower logical error rate than the physical error rate, with performance depending on the decoding method. Traditional error decoding approaches, relying on the binarization (`hardening') of readout data, often ignore valuable information embedded in the analog (`soft') readout signal. We present experimental results showcas…
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Quantum error correction enables the preservation of logical qubits with a lower logical error rate than the physical error rate, with performance depending on the decoding method. Traditional error decoding approaches, relying on the binarization (`hardening') of readout data, often ignore valuable information embedded in the analog (`soft') readout signal. We present experimental results showcasing the advantages of incorporating soft information into the decoding process of a distance-three ($d=3$) bit-flip surface code with transmons. To this end, we use the $3\times3$ data-qubit array to encode each of the $16$ computational states that make up the logical state $\ket{0_{\mathrm{L}}}$, and protect them against bit-flip errors by performing repeated $Z$-basis stabilizer measurements. To infer the logical fidelity for the $\ket{0_{\mathrm{L}}}$ state, we average across the $16$ computational states and employ two decoding strategies: minimum weight perfect matching and a recurrent neural network. Our results show a reduction of up to $6.8\%$ in the extracted logical error rate with the use of soft information. Decoding with soft information is widely applicable, independent of the physical qubit platform, and could reduce the readout duration, further minimizing logical error rates.
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Submitted 1 March, 2024;
originally announced March 2024.
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Phase transitions of Fe$_2$O$_3$ under laser shock compression
Authors:
A. Amouretti,
C. Crépisson,
S. Azadi,
D. Cabaret,
T. Campbell,
D. A. Chin,
B. Colin,
G. R. Collins,
L. Crandall,
G. Fiquet,
A. Forte,
T. Gawne,
F. Guyot,
P. Heighway,
H. Lee,
D. McGonegle,
B. Nagler,
J. Pintor,
D. Polsin,
G. Rousse,
Y. Shi,
E. Smith,
J. S. Wark,
S. M. Vinko,
M. Harmand
Abstract:
We present in-situ x-ray diffraction and velocity measurements of Fe$_2$O$_3$ under laser shock compression at pressures between 38-116 GPa. None of the phases reported by static compression studies were observed. Instead, we observed an isostructural phase transition from $α$-Fe$_2$O$_3$ to a new $α^\prime$-Fe$_2$O$_3$ phase at a pressure of 50-62 GPa. The $α^\prime$-Fe$_2$O$_3$ phase differs fro…
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We present in-situ x-ray diffraction and velocity measurements of Fe$_2$O$_3$ under laser shock compression at pressures between 38-116 GPa. None of the phases reported by static compression studies were observed. Instead, we observed an isostructural phase transition from $α$-Fe$_2$O$_3$ to a new $α^\prime$-Fe$_2$O$_3$ phase at a pressure of 50-62 GPa. The $α^\prime$-Fe$_2$O$_3$ phase differs from $α$-Fe$_2$O$_3$ by an 11% volume drop and a different unit cell compressibility. We further observed a two-wave structure in the velocity profile, which can be related to an intermediate regime where both $α$ and $α^\prime$ phases coexist. Density functional theory calculations with a Hubbard parameter indicate that the observed unit cell volume drop can be associated with a spin transition following a magnetic collapse.
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Submitted 28 February, 2024;
originally announced February 2024.
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Resonant inelastic x-ray scattering in warm-dense Fe compounds beyond the SASE FEL resolution limit
Authors:
Alessandro Forte,
Thomas Gawne,
Karim K. Alaa El-Din,
Oliver S. Humphries,
Thomas R. Preston,
Céline Crépisson,
Thomas Campbell,
Pontus Svensson,
Sam Azadi,
Patrick Heighway,
Yuanfeng Shi,
David A. Chin,
Ethan Smith,
Carsten Baehtz,
Victorien Bouffetier,
Hauke Höppner,
David McGonegle,
Marion Harmand,
Gilbert W. Collins,
Justin S. Wark,
Danae N. Polsin,
Sam M. Vinko
Abstract:
Resonant inelastic x-ray scattering (RIXS) is a widely used spectroscopic technique, providing access to the electronic structure and dynamics of atoms, molecules, and solids. However, RIXS requires a narrow bandwidth x-ray probe to achieve high spectral resolution. The challenges in delivering an energetic monochromated beam from an x-ray free electron laser (XFEL) thus limit its use in few-shot…
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Resonant inelastic x-ray scattering (RIXS) is a widely used spectroscopic technique, providing access to the electronic structure and dynamics of atoms, molecules, and solids. However, RIXS requires a narrow bandwidth x-ray probe to achieve high spectral resolution. The challenges in delivering an energetic monochromated beam from an x-ray free electron laser (XFEL) thus limit its use in few-shot experiments, including for the study of high energy density systems. Here we demonstrate that by correlating the measurements of the self-amplified spontaneous emission (SASE) spectrum of an XFEL with the RIXS signal, using a dynamic kernel deconvolution with a neural surrogate, we can achieve electronic structure resolutions substantially higher than those normally afforded by the bandwidth of the incoming x-ray beam. We further show how this technique allows us to discriminate between the valence structures of Fe and Fe$_2$O$_3$, and provides access to temperature measurements as well as M-shell binding energies estimates in warm-dense Fe compounds.
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Submitted 11 January, 2024;
originally announced February 2024.
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Voltage dependent first-principles barriers to Li transport within Li ion battery Solid Electrolyte Interphases
Authors:
Quinn T. Campbell
Abstract:
Charging a Li ion battery requires Li ion transport between the cathode and the anode. This Li ion transport is dependent upon (among other factors) the electrostatic environment the ion encounters within the Solid Electrolyte Interphase (SEI), which separates the anode from the surrounding electrolyte. Previous first principles work has illuminated the reaction barriers through likely atomistic S…
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Charging a Li ion battery requires Li ion transport between the cathode and the anode. This Li ion transport is dependent upon (among other factors) the electrostatic environment the ion encounters within the Solid Electrolyte Interphase (SEI), which separates the anode from the surrounding electrolyte. Previous first principles work has illuminated the reaction barriers through likely atomistic SEI environments, but has had difficulty accurately reflecting the larger electrostatic potential landscape that an ion encounters moving through the SEI. In this work, we apply the recently developed Quantum Continuum Approximation (QCA) technique to provide an equilibrium electronic potentiostat for first-principles interface calculations. Using QCA, we calculate the potential barrier for Li ion transport through LiF, Li$_2$O, and Li$_2$CO$_3$ SEIs along with LiF-LiF, and LiF-Li$_2$O grain boundaries, all paired with Li metal anodes. We demonstrate that the SEI potential barrier is dependent on the anode electrochemical potentials in each system. Finally, we use these techniques to estimate the change in the diffusion barrier for a Li ion moving in a LiF SEI as a function of anode potential. We find that properly accounting for interface and electronic voltage effects significantly lowers reaction barriers compared to previous literature results.
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Submitted 4 June, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
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Electronic structure of boron and aluminum $δ$-doped layers in silicon
Authors:
Quinn T. Campbell,
Shashank Misra,
Andrew D. Baczewski
Abstract:
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $δ$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such $δ$ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant i…
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Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $δ$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such $δ$ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant impact on the impurity band energies and effective masses of the boron layers, but not the aluminum layers. However, disorder in the $δ$ layers is found to lead to significant flattening of the bands in both cases. We calculate the local density of states and do** potential for these $δ$-doped layers, demonstrating that their influence is highly localized with spatial extents at most 4 nm. We conclude that acceptor $δ$-doped layers exhibit different electronic structure features dependent on both the dopant atom and spatial ordering. This suggests prospects for controlling the electronic properties of these layers if the local details of the incorporation chemistry can be fine tuned.
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Submitted 17 April, 2023;
originally announced April 2023.
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Optimizing accuracy and efficacy in data-driven materials discovery for the solar production of hydrogen
Authors:
Yihuang Xiong,
Quinn T. Campbell,
Julian Fanghanel,
Catherine K. Badding,
Huaiyu Wang,
Nicole E. Kirchner-Hall,
Monica J. Theibault,
Iurii Timrov,
Jared S. Mondschein,
Kriti Seth,
Rebecca Katz,
Andres Molina Villarino,
Betül Pamuk,
Megan E. Penrod,
Mohammed M. Khan,
Tiffany Rivera,
Nathan C. Smith,
Xavier Quintana,
Paul Orbe,
Craig J. Fennie,
Senorpe Asem-Hiablie,
James L. Young,
Todd G. Deutsch,
Matteo Cococcioni,
Venkatraman Gopalan
, et al. (3 additional authors not shown)
Abstract:
The production of hydrogen fuels, via water splitting, is of practical relevance for meeting global energy needs and mitigating the environmental consequences of fossil-fuel-based transportation. Water photoelectrolysis has been proposed as a viable approach for generating hydrogen, provided that stable and inexpensive photocatalysts with conversion efficiencies over 10% can be discovered, synthes…
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The production of hydrogen fuels, via water splitting, is of practical relevance for meeting global energy needs and mitigating the environmental consequences of fossil-fuel-based transportation. Water photoelectrolysis has been proposed as a viable approach for generating hydrogen, provided that stable and inexpensive photocatalysts with conversion efficiencies over 10% can be discovered, synthesized at scale, and successfully deployed (Pinaud et al., Energy Environ. Sci., 2013, 6, 1983). While a number of first-principles studies have focused on the data-driven discovery of photocatalysts, in the absence of systematic experimental validation, the success rate of these predictions may be limited. We address this problem by develo** a screening procedure with co-validation between experiment and theory to expedite the synthesis, characterization, and testing of the computationally predicted, most desirable materials. Starting with 70,150 compounds in the Materials Project database, the proposed protocol yielded 71 candidate photocatalysts, 11 of which were synthesized as single-phase materials. Experiments confirmed hydrogen generation and favorable band alignment for 6 of the 11 compounds, with the most promising ones belonging to the families of alkali and alkaline-earth indates and orthoplumbates. This study shows the accuracy of a nonempirical, Hubbard-corrected density-functional theory method to predict band gaps and band offsets at a fraction of the computational cost of hybrid functionals, and outlines an effective strategy to identify photocatalysts for solar hydrogen generation.
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Submitted 1 February, 2021;
originally announced February 2021.
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Nearly tight Trotterization of interacting electrons
Authors:
Yuan Su,
Hsin-Yuan Huang,
Earl T. Campbell
Abstract:
We consider simulating quantum systems on digital quantum computers. We show that the performance of quantum simulation can be improved by simultaneously exploiting commutativity of the target Hamiltonian, sparsity of interactions, and prior knowledge of the initial state. We achieve this using Trotterization for a class of interacting electrons that encompasses various physical systems, including…
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We consider simulating quantum systems on digital quantum computers. We show that the performance of quantum simulation can be improved by simultaneously exploiting commutativity of the target Hamiltonian, sparsity of interactions, and prior knowledge of the initial state. We achieve this using Trotterization for a class of interacting electrons that encompasses various physical systems, including the plane-wave-basis electronic structure and the Fermi-Hubbard model. We estimate the simulation error by taking the transition amplitude of nested commutators of the Hamiltonian terms within the $η$-electron manifold. We develop multiple techniques for bounding the transition amplitude and expectation of general fermionic operators, which may be of independent interest. We show that it suffices to use $\left(\frac{n^{5/3}}{η^{2/3}}+n^{4/3}η^{2/3}\right)n^{o(1)}$ gates to simulate electronic structure in the plane-wave basis with $n$ spin orbitals and $η$ electrons, improving the best previous result in second quantization up to a negligible factor while outperforming the first-quantized simulation when $n=η^{2-o(1)}$. We also obtain an improvement for simulating the Fermi-Hubbard model. We construct concrete examples for which our bounds are almost saturated, giving a nearly tight Trotterization of interacting electrons.
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Submitted 30 June, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
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Creation and confirmation of Hopfions in magnetic multilayer systems
Authors:
N. Kent,
N. Reynolds,
D. Raftrey,
I. T. G. Campbell,
S. Virasawmy,
S. Dhuey,
R. V. Chopdekar,
A. Hierro-Rodriguez,
A. Sorrentino,
E. Pereiro,
S. Ferrer,
F. Hellman,
P. Sutcliffe,
P. Fischer
Abstract:
Topological solitons have been studied for decades in classical field theories, and have started recently to impact condensed matter physics. Among those solitons, magnetic skyrmions are two-dimensional particle-like objects with a continuous winding of the magnetization, and magnetic Hopfions are three-dimensional topological solitons that can be formed from a closed loop of a twisted skyrmion st…
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Topological solitons have been studied for decades in classical field theories, and have started recently to impact condensed matter physics. Among those solitons, magnetic skyrmions are two-dimensional particle-like objects with a continuous winding of the magnetization, and magnetic Hopfions are three-dimensional topological solitons that can be formed from a closed loop of a twisted skyrmion string. Whereas intense research is underway with magnetic skyrmions towards a fundamental understanding and potential applications in advanced storage and logic devices, the experimental creation and confirmation of magnetic Hopfions has been elusive so far. Theoretical models suggest that Hopfions can be stabilized in frustrated or chiral magnetic systems, and that target skymions can be transformed into Hopfions by adapting their perpendicular magnetic anisotropy. Here, we present experimental evidence of magnetic Hopfions that were created in magnetic Ir/Co/Pt multilayers shaped into nanoscale disks, which are known to host target skyrmions. The three-dimensional spin texture, which distinguishes magnetic Hopfions from target skyrmions was confirmed by combining two advanced element-specific magnetic X-ray microscopy techniques with about 20-30nm lateral resolution, using X-ray magnetic circular dichroism effect as magnetic contrast mechanism in surface-sensitive X-ray photoemission electron microscopy and bulk-sensitive soft x-ray transmission microscopy. We anticipate that these results will stimulate further investigations of Hopfions with different topologies and their potential application in three-dimensional spintronics devices.
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Submitted 16 October, 2020;
originally announced October 2020.
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Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Authors:
Shruti Subramanian,
Quinn T. Campbell,
Simon Moser,
Jonas Kiemle,
Philipp Zimmermann,
Paul Seifert,
Florian Sigger,
Deeksha Sharma,
Hala Al-Sadeg,
Michael Labella III,
Dacen Waters,
Randall M. Feenstra,
Roland J. Koch,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Ismaila Dabo,
Alexander Holleitner,
Thomas E. Beechem,
Ursula Wurstbauer,
Joshua A. Robinson
Abstract:
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large…
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Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent map** allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.
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Submitted 25 June, 2020;
originally announced June 2020.
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Cellular automaton decoders of topological quantum memories in the fault tolerant setting
Authors:
M. Herold,
M. J. Kastoryano,
E. T. Campbell,
J. Eisert
Abstract:
Active error decoding and correction of topological quantum codes - in particular the toric code - remains one of the most viable routes to large scale quantum information processing. In contrast, passive error correction relies on the natural physical dynamics of a system to protect encoded quantum information. However, the search is ongoing for a completely satisfactory passive scheme applicable…
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Active error decoding and correction of topological quantum codes - in particular the toric code - remains one of the most viable routes to large scale quantum information processing. In contrast, passive error correction relies on the natural physical dynamics of a system to protect encoded quantum information. However, the search is ongoing for a completely satisfactory passive scheme applicable to locally-interacting two-dimensional systems. Here, we investigate dynamical decoders that provide passive error correction by embedding the decoding process into local dynamics. We propose a specific discrete time cellular-automaton decoder in the fault tolerant setting and provide numerical evidence showing that the logical qubit has a survival time extended by several orders of magnitude over that of a bare unencoded qubit. We stress that (asynchronous) dynamical decoding gives rise to a Markovian dissipative process. We hence equate cellular-automaton decoding to a fully dissipative topological quantum memory, which removes errors continuously. In this sense, uncontrolled and unwanted local noise can be corrected for by a controlled local dissipative process. We analyze the required resources, commenting on additional polylogarithmic factors beyond those incurred by an ideal constant resource dynamical decoder.
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Submitted 30 June, 2017; v1 submitted 17 November, 2015;
originally announced November 2015.
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Linear and Non-linear Response of Lithographically Defined Plasmonic Nanoantennas
Authors:
K. Schraml,
M. Kaniber,
J. Bartl,
G. Glashagen,
A. Regler,
T. Campbell,
J. J. Finley
Abstract:
We present numerical studies, nano-fabrication and optical characterization of bowtie nanoantennas demonstrating their superior performance with respect to the electric field enhancement as compared to other Au nanoparticle shapes. For optimized parameters, we found mean intensity enhancement factors >2300x in the feed-gap of the antenna, decreasing to 1300x when introducing a 5nm titanium adhesio…
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We present numerical studies, nano-fabrication and optical characterization of bowtie nanoantennas demonstrating their superior performance with respect to the electric field enhancement as compared to other Au nanoparticle shapes. For optimized parameters, we found mean intensity enhancement factors >2300x in the feed-gap of the antenna, decreasing to 1300x when introducing a 5nm titanium adhesion layer. Using electron beam lithography we fabricated gold bowties on various substrates with feed-gaps and tip radii as small as 10nm. In polarization resolved measurement we experimentally observed a blue shift of the surface plasmon resonance from 1.72eV to 1.35eV combined with a strong modification of the electric field enhancement in the feed-gap. Under excitation with a 100fs pulsed laser source, we observed non-linear light emission arising from two-photon photoluminescence and second harmonic generation from the gold. The bowtie nanoantenna shows a high potential for outstanding conversion efficiencies and the enhancement of other optical effects which could be exploited in future nanophotonic devices.
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Submitted 20 February, 2015; v1 submitted 18 February, 2015;
originally announced February 2015.
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Cellular-automaton decoders for topological quantum memories
Authors:
Michael Herold,
Earl T. Campbell,
Jens Eisert,
Michael J. Kastoryano
Abstract:
We introduce a new framework for constructing topological quantum memories, by recasting error recovery as a dynamical process on a field generating cellular automaton. We envisage quantum systems controlled by a classical hardware composed of small local memories, communicating with neighbours, and repeatedly performing identical simple update rules. This approach does not require any global oper…
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We introduce a new framework for constructing topological quantum memories, by recasting error recovery as a dynamical process on a field generating cellular automaton. We envisage quantum systems controlled by a classical hardware composed of small local memories, communicating with neighbours, and repeatedly performing identical simple update rules. This approach does not require any global operations or complex decoding algorithms. Our cellular automata draw inspiration from classical field theories, with a Coulomb-like potential naturally emerging from the local dynamics. For a 3D automaton coupled to a 2D toric code, we present evidence of an error correction threshold above 6.1% for uncorrelated noise. A 2D automaton equipped with a more complex update rule yields a threshold above 8.2%. Our framework provides decisive new tools in the quest for realising a passive dissipative quantum memory.
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Submitted 27 October, 2015; v1 submitted 9 June, 2014;
originally announced June 2014.
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Optical properties and interparticle coupling of plasmonic bowtie nanoantennas on a semiconducting substrate
Authors:
K. Schraml,
M. Spiegl,
M. Kammerlocher,
G. Bracher,
J. Bartl,
T. Campbell,
J. J. Finley,
M. Kaniber
Abstract:
We present the simulation, fabrication and optical characterization of plasmonic gold bowtie nanoantennas on a semiconducting GaAs substrate as geometrical parameters such as size, feed gap, height and polarization of the incident light are varied. The surface plasmon resonance was probed using white light reflectivity on an array of nominally identical, 35nm thick Au antennas. To elucidate the in…
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We present the simulation, fabrication and optical characterization of plasmonic gold bowtie nanoantennas on a semiconducting GaAs substrate as geometrical parameters such as size, feed gap, height and polarization of the incident light are varied. The surface plasmon resonance was probed using white light reflectivity on an array of nominally identical, 35nm thick Au antennas. To elucidate the influence of the semiconducting, high refractive index substrate, all experiments were compared using nominally identical structures on glass. Besides a linear shift of the surface plasmon resonance from 1.08eV to 1.58eV when decreasing the triangle size from 170nm to 100nm on GaAs, we observed a global redshift by 0.25 +- 0.05eV with respect to nominally identical structures on glass. By performing polarization resolved measurements and comparing results with finite difference time domain simulations, we determined the near field coupling between the two triangles composing the bowtie antenna to be 8x stronger when the antenna is on a glass substrate compared to when it is on a GaAs substrate. The results obtained are of strong relevance for the integration of lithographically defined plasmonic nanoantennas on semiconducting substrates and, therefore, for the development of novel optically active plasmonic-semiconducting nanostructures.
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Submitted 13 May, 2014;
originally announced May 2014.