-
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Authors:
Sergio Fernández-Garrido,
Vladimir M. Kaganer,
Karl K. Sabelfeld,
Tobias Gotschke,
Javier Grandal,
Enrique Calleja,
Lutz Geelhaar,
Oliver Brandt
Abstract:
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for bo…
▽ More
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets towards the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratios.
△ Less
Submitted 30 January, 2024;
originally announced February 2024.
-
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
Authors:
S. Fernández-Garrido,
J. Pereiro,
F. González-Posada,
E. Muñoz,
E. Calleja,
A. Redondo-Cubero,
R. Gago
Abstract:
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization reveal…
▽ More
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization revealed by the S- and W-shaped temperature dependences of the photoluminescence emission energy and bandwidth respectively. Present results point to these materials as a promising choice for the active region in efficient light emitters. An In-related bowing parameter of 1.6 eV was derived from optical absorption data.
△ Less
Submitted 30 January, 2024;
originally announced February 2024.
-
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Authors:
S. Fernández-Garrido,
A. Redondo-Cubero,
R. Gago,
F. Bertram,
J. Christen,
E. Luna,
A. Trampert,
J. Pereiro,
E. Muñoz,
E. Calleja
Abstract:
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuousl…
▽ More
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodo-luminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.
△ Less
Submitted 30 January, 2024;
originally announced February 2024.
-
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Authors:
P. Aseev,
Ž. Gačević,
J. M. Mánuel,
J. J. Jiménez,
R. García,
F. M. Morales,
E. Calleja
Abstract:
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in form…
▽ More
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in formation of metallic In droplets on the substrate surface, and then to an im**ing active nitrogen flux, resulting in In conversion into polycrystalline InN islands. During the second stage, the substrate, which is still kept exposed to active nitrogen, is heated up to T = 300 °C, to allow for the reorganization of extended polycrystalline InN islands into groups of independent single crystalline wurtzite InN QDs. This work provides a detailed experimental insight into both fabrication stages and their qualitative explanations within the scopes of adatom surface kinetics (stage I) and total energy per unit crystal volume minimization (stage II). Finally, the formation mechanisms of InN QDs on the three different substrates (Si(111), Si(001) and In0.3Ga0.7N/Si(111)) are compared, and also linked to the formation mechanisms of other more studied nanostructures, such as self assembled GaN/AlN QDs and self assembled and selective area grown GaN nanowires.
△ Less
Submitted 31 January, 2024;
originally announced February 2024.
-
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
Authors:
G. Koblmüller,
S. Fernández-Garrido,
E. Calleja,
J. S. Speck
Abstract:
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer…
▽ More
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
Authors:
S. Fernández-Garrido,
Ž. Gačević,
E. Calleja
Abstract:
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the im**ing In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased…
▽ More
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the im**ing In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the im**ing In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behaviour characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
Authors:
S. Fernández-Garrido,
G. Koblmüller,
E. Calleja,
J. S. Speck
Abstract:
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity o…
▽ More
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
Authors:
S. Fernández-Garrido,
J. Grandal,
E. Calleja,
M. A. Sánchez-García,
D. López-Romero
Abstract:
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of im**ing Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing und…
▽ More
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of im**ing Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
Effect of different buffer layers on the quality of InGaN layers grown on Si
Authors:
V. J. Gómez,
J. Grandal,
A. Núñez-Cascajero,
F. B. Naranjo,
M. Varela,
M. A. Sánchez-García,
E. Calleja
Abstract:
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet e…
▽ More
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while kee** a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
△ Less
Submitted 29 August, 2019;
originally announced August 2019.
-
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Authors:
Z. Gacevic,
M. Holmes,
E. Chernysheva,
M. Muller,
A. Torres-Pardo,
P. Veit,
F. Bertram,
J. Christen,
J. M. Gonzalez-Calbet,
Y. Arakawa,
E. Calleja,
S. Lazic
Abstract:
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot types exhibit single photon emission with narrow emission line widths and high degrees of linear optical polarization. The host crystal region strongly affects bo…
▽ More
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot types exhibit single photon emission with narrow emission line widths and high degrees of linear optical polarization. The host crystal region strongly affects both single photon wavelength and emission lifetime, reaching subnanosecond time scales for the non- and semipolar quantum dots. Localization sites in the InGaN potential landscape, most likely induced by indium fluctuations across the InGaN nanoshell, are identified as the driving mechanism for the single photon emission. The hereby reported pencil-like InGaN nanoshell is the first single nanostructure able to host all three types of single photon sources and is, thus, a promising building block for tunable quantum light devices integrated into future photonic circuits.
△ Less
Submitted 28 June, 2017; v1 submitted 12 June, 2017;
originally announced June 2017.
-
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
Authors:
S. Lazic,
E. Chernysheva,
Z. Gacevic,
H. P. van der Meulen,
E. Calleja,
J. M. Calleja Pardo
Abstract:
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. T…
▽ More
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.
△ Less
Submitted 12 June, 2017;
originally announced June 2017.
-
Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
Authors:
E. Chernysheva,
Z. Gacevic,
N. Garcia-Lepetit,
H. P. van der Meulen,
M. Muller,
F. Bertram,
P. Veit,
A. Torres-Pardo,
J. M. Gonzalez Calbet,
J. Christen,
E. Calleja,
J. M. Calleja,
S. Lazic
Abstract:
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical…
▽ More
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single-photon emission is determined by photon correlation measurements showing deep anti-bunching minima in the second-order correlation function. The present results are a promising step towards the realization of on-site/on-demand single-photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.
△ Less
Submitted 12 June, 2017;
originally announced June 2017.
-
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Authors:
Snezana Lazic,
Ekaterina Chernysheva,
Zarko Gacevic,
Noemi Garcia-Lepetit,
Herko P. van der Meulen,
Marcus Muller,
Frank Bertram,
Peter Veit,
Jürgen Christen,
Almudena Torres-Pardo,
José M. González Calbet,
Enrique Calleja,
Jose M. Calleja
Abstract:
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epi…
▽ More
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
△ Less
Submitted 12 June, 2017;
originally announced June 2017.
-
Topology of DNA: a honeycomb stable structure under salt effect
Authors:
Elsa de la Calleja,
R. F Bazoni,
M. S. Rocha,
Marcia Barbosa
Abstract:
Atomic Force Microscopy analysis is employed to study the geometrical and topological properties of $3000$kbp DNA molecules fixed in mica substrates with $MgCl_{2}$. We found that the aggregates on the substrate surface for certain salt concentrations form a honeycomb stable structure with the addition of salt. The honeycomb, and the transition to other structures, were characterized by the \emph{…
▽ More
Atomic Force Microscopy analysis is employed to study the geometrical and topological properties of $3000$kbp DNA molecules fixed in mica substrates with $MgCl_{2}$. We found that the aggregates on the substrate surface for certain salt concentrations form a honeycomb stable structure with the addition of salt. The honeycomb, and the transition to other structures, were characterized by the \emph{Betti numbers}, which is a topological invariant property and by \emph{Hausdorff-Besicovitch fractal dimension}.
△ Less
Submitted 8 June, 2017;
originally announced June 2017.
-
Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
Authors:
E Luna,
J Grandal,
E Gallardo,
J M Calleja,
M A Sánchez-García,
E Calleja,
A Trampert
Abstract:
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specific…
▽ More
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN <11-20>.
△ Less
Submitted 29 September, 2014; v1 submitted 17 December, 2013;
originally announced December 2013.
-
Local density of states study of a spin-orbit-coupling induced Mott insulator Sr$_2$IrO$_4$
Authors:
Jixia Dai,
Eduardo Calleja,
Gang Cao,
Kyle McElroy
Abstract:
We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we…
▽ More
We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects shows that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.
△ Less
Submitted 27 June, 2014; v1 submitted 15 March, 2013;
originally announced March 2013.
-
Microscopic evidence for strong periodic lattice distortion in 2D charge-density wave systems
Authors:
Jixia Dai,
Eduardo Calleja,
Jacob Alldredge,
Xiangde Zhu,
Lijun Li,
Wenjian Lu,
Yu** Sun,
Thomas Wolf,
Helmuth Berger,
Kyle McElroy
Abstract:
In the quasi-2D electron systems of the layered transition metal dichalcogenides (TMD) there is still a controversy about the nature of the transitions to charge-density wave (CDW) phases, i.e. whether they are described by a Peierls-type mechanism or by a lattice-driven model. By performing scanning tunneling microscopy (STM) experiments on the canonical TMD-CDW systems, we have imaged the electr…
▽ More
In the quasi-2D electron systems of the layered transition metal dichalcogenides (TMD) there is still a controversy about the nature of the transitions to charge-density wave (CDW) phases, i.e. whether they are described by a Peierls-type mechanism or by a lattice-driven model. By performing scanning tunneling microscopy (STM) experiments on the canonical TMD-CDW systems, we have imaged the electronic modulation and the lattice distortion separately in 2H-TaS$_2$, TaSe$_2$, and NbSe$_2$. Across the three materials, we found dominant lattice contributions instead of the electronic modulation expected from Peierls transitions, in contrast to the CDW states that show the hallmark of contrast inversion between filled and empty states. Our results imply that the periodic lattice distortion (PLD) plays a vital role in the formation of CDW phases in the TMDs and illustrate the importance of taking into account the more complicated lattice degree of freedom when studying correlated electron systems.
△ Less
Submitted 1 May, 2014; v1 submitted 5 March, 2013;
originally announced March 2013.
-
The k-space Origins of Scattering in Bi2Sr2CaCu2O8+x
Authors:
Jacob W. Alldredge,
Eduardo M. Calleja,
Jixia Dai,
H. Eisaki,
S. Uchida,
Kyle McElroy
Abstract:
We demonstrate a general, computer automated procedure that inverts the q-space scattering data measured by spectroscopic imaging scanning tunneling microscopy (SI-STM) to determine the k-space scattering structure. This allows a detailed examination of the k-space origins of the quasiparticle interference (QPI) pattern in Bi2Sr2CaCu2O8+x. This new method allows the measurements of the differences…
▽ More
We demonstrate a general, computer automated procedure that inverts the q-space scattering data measured by spectroscopic imaging scanning tunneling microscopy (SI-STM) to determine the k-space scattering structure. This allows a detailed examination of the k-space origins of the quasiparticle interference (QPI) pattern in Bi2Sr2CaCu2O8+x. This new method allows the measurements of the differences between the positive and negative energy dispersions, the gap structure and it also measures energy dependent scattering length scale. Furthermore, the transitions between the dispersive QPI, the checkerboard and the pseudogap are mapped in detail allowing the exact nature of these transitions to be determined for both positive and negative energies. We are also able to measure the k-space scattering structure over a wide range of do** (p ~ 0.22 to 0.08), including regions where the octet model is not applicable. Our technique allows a complete picture of the k-space origins of the spatial excitations in Bi2Sr2CaCu2O8+x to be mapped out, providing for better comparisons between SI-STM and other experimental probes of the band structure and validating our new general approach for determining the k-space scattering origins from SI-STM data.
△ Less
Submitted 22 February, 2013;
originally announced February 2013.
