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AFM-IR of EHD-Printed PbS Quantum Dots: Quantifying Ligand Exchange at the Nanoscale
Authors:
Lorenzo J. A. Ferraresi,
Gökhan Kara,
Nancy A. Burnham,
Roman Furrer,
Dmitry N. Dirin,
Fabio La Mattina,
Maksym V. Kovalenko,
Michel Calame,
Ivan Shorubalko
Abstract:
Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive photolithography steps. Post-deposition ligand exchange is necessary for the introduction of new functionalities into cQD solids. However, achieving a complete bul…
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Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive photolithography steps. Post-deposition ligand exchange is necessary for the introduction of new functionalities into cQD solids. However, achieving a complete bulk exchange is challenging and conventional infrared spectroscopy lacks the required spatial resolution. Infrared nanospectroscopy (AFM-IR) enables quantitative analysis of the evolution of vibrational signals and structural topography on the nano-metre scale upon ligand substitution on lead sulphide (PbS) cQDs. A solution of ethane-dithiol in acetonitrile demonstrated rapid (~60 s) and controllable exchange of approximately 90% of the ligands, encompassing structures up to ~800 nm in thickness. Prolonged exposures (>1 h) led to the degradation of the microstructures, with a systematic removal of cQDs regulated by surface-to-bulk ratios and solvent interactions. This study establishes a method for the development of devices through a combination of tuneable photoactive materials, additive manufacturing of microstructures, and their quantitative nanometre-scale analysis.
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Submitted 9 January, 2024;
originally announced January 2024.
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Scaling of Hybrid QDs-Graphene Photodetectors to Subwavelength Dimension
Authors:
Gökhan Kara,
Patrik Rohner,
Erfu Wu,
Dmitry N. Dirin,
Roman Furrer,
Dimos Poulikakos,
Maksym V. Kovalenko,
Michel Calame,
Ivan Shorubalko
Abstract:
Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved or flexible substrates. Hybrid phototransistors based on 2D materials and cQDs, in particular, are promising due to their inherent photogain enabling direct ph…
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Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved or flexible substrates. Hybrid phototransistors based on 2D materials and cQDs, in particular, are promising due to their inherent photogain enabling direct photosignal enhancement. The photogain is sensitive to both, measurement conditions and photodetector geometry. This makes the cross-comparison of devices reported in the literature rather involved. Here, the effect of device length L and width W scaling to subwavelength dimensions (sizes down to 500 nm) on the photoresponse of graphene-PbS cQD phototransistors was experimentally investigated. Photogain and responsivity were found to scale with 1/LW, whereas the photocurrent and specific detectivity were independent of geometrical parameters. The measurements were performed at scaled bias voltage conditions for comparable currents. Contact effects were found to limit the photoresponse for devices with L < 3 μm. The relation of gate voltage, bias current, light intensity, and frequency on the photoresponse was investigated in detail, and a photogating efficiency to assess the cQD-graphene interface is presented. In particular, the specific detectivity values in the range between 10^8 to 10^9 Jones (wavelength of 1550 nm, frequency 6 Hz, room temperature) were found to be limited by the charge transfer across the photoactive interface.
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Submitted 8 December, 2023;
originally announced December 2023.
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On-surface synthesis and characterization of Teranthene and Hexanthene: Ultrashort graphene nanoribbons with mixed armchair and zigzag edges
Authors:
Gabriela Borin Barin,
Marco Di Giovannantonio,
Thorsten G. Lohr,
Shantanu Mishra,
Amogh Kinikar,
Mickael L. Perrin,
Jan Overbeck,
Michel Calame,
Xinliang Feng,
Roman Fasel,
Pascal Ruffieux
Abstract:
Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. Ho…
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Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. However, these states significantly increase their reactivity. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.
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Submitted 31 July, 2023;
originally announced July 2023.
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Quantifying Alignment and Quality of Graphene Nanoribbons: A Polarized Raman Spectroscopy Approach
Authors:
Rimah Darawish,
Jan Overbeck,
Klaus Müllen,
Michel Calame,
Pascal Ruffieux,
Roman Fasel,
Gabriela Borin Barin
Abstract:
Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist in GNR processing and characterization, particularly regarding GNR alignment during device integration. In this study, we quantitatively assess the alignment and…
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Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist in GNR processing and characterization, particularly regarding GNR alignment during device integration. In this study, we quantitatively assess the alignment and quality of 9-atom-wide armchair graphene nanoribbons (9-AGNRs) on different substrates using polarized Raman spectroscopy. Our approach incorporates an extended model that describes GNR alignment through a Gaussian distribution of angles. We not only extract the angular distribution of GNRs but also analyze polarization-independent intensity contributions to the Raman signal, providing insights into surface disorder on the growth substrate and after substrate transfer. Our findings reveal that low-coverage samples grown on Au(788) exhibit superior uniaxial alignment compared to high-coverage samples, attributed to preferential growth along step edges, as confirmed by scanning tunneling microscopy (STM). Upon substrate transfer, the alignment of low-coverage samples deteriorates, accompanied by increased surface disorder. On the other hand, high-coverage samples maintain alignment and exhibit reduced disorder on the target substrate. Our extended model enables a quantitative description of GNR alignment and quality, facilitating the development of GNR-based nanoelectronic devices.
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Submitted 18 July, 2023;
originally announced July 2023.
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Nanoscale electronic transport at graphene/pentacene van der Waals interface
Authors:
Michel Daher Mansour,
Jacopo Oswald,
Davide Beretta,
Michael Stiefe,
Roman Furrer,
Michel Calame,
Dominique Vuillaume
Abstract:
We report a study on the relationship between structure and electron transport properties of nanoscale graphene/pentacene interfaces. We fabricated graphene/pentacene interfaces from 10-30 nm thick needle-like pentacene nanostructures down to two-three layers (2L-3L) dendritic pentacene islands, and we measured their electron transport properties by conductive atomic force microscopy (C-AFM). The…
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We report a study on the relationship between structure and electron transport properties of nanoscale graphene/pentacene interfaces. We fabricated graphene/pentacene interfaces from 10-30 nm thick needle-like pentacene nanostructures down to two-three layers (2L-3L) dendritic pentacene islands, and we measured their electron transport properties by conductive atomic force microscopy (C-AFM). The energy barrier at the interfaces, i.e. the energy position of the pentacene highest occupied molecular orbital (HOMO) with respect to the Fermi energy of the graphene and the C-AFM metal tip, are determined and discussed with the appropriate electron transport model (double Schottky diode model and Landauer-Buttiker model, respectively) taking into account the voltage-dependent charge do** of graphene. In both types of samples, the energy barrier at the graphene/pentacene interface is slightly larger than that at the pentacene/metal tip interface, resulting in 0.47-0.55 eV and 0.21-0.34 eV, respectively, for the 10-30 nm thick needle-like pentacene islands, and in 0.92-1.44 eV and 0.67-1.05 eV, respectively, for the 2L-3L thick dendritic pentacene nanostructures. We attribute this difference to the molecular organization details of the pentacene/graphene heterostructures, with pentacene molecules lying flat on the graphene in the needle-like pentacene nansotructures, while standing upright in 2L-3L dendritic islands, as observed from Raman spectroscopy.
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Submitted 4 May, 2023; v1 submitted 20 April, 2023;
originally announced April 2023.
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Exciton-assisted electron tunneling in van der Waals heterostructures
Authors:
Lujun Wang,
Sotirios Papadopoulos,
Fadil Iyikanat,
Jian Zhang,
**g Huang,
Kenji Watanabe,
Takashi Taniguchi,
Michel Calame,
Mickael L. Perrin,
F. Javier García de Abajo,
Lukas Novotny
Abstract:
The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect int…
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The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here, we use a novel tunneling process that involves excitons in transition metal dichalcogenides (TMDs). We study tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent TMD monolayer and observe prominent resonant features in $I-V$ measurements. These resonances appear at bias voltages that correspond to TMD exciton energies. By placing the TMD outside of the tunneling pathway, we demonstrate that this phonon-exciton mediated tunneling process does not require any charge injection into the TMD. This work demonstrates the appearance of optical modes in electrical transport measurements and introduces a new functionality for optoelectronic devices based on van der Waals materials.
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Submitted 2 March, 2023;
originally announced March 2023.
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Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs
Authors:
Wenhao Huang,
Tathagata Paul,
Kenji Watanabe,
Takashi Taniguchi,
Mickael L. Perrin,
Michel Calame
Abstract:
Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene FETs. In two complementary measurement schemes, we monitor differenti…
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Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene FETs. In two complementary measurement schemes, we monitor differential resistance of graphene for different channel widths and for different effective electron temperatures. By combining both approaches, the presence of viscous effects is verified in a temperature range starting from 178 K and extending up to room temperature. Our experimental findings are supported by finite element calculations of the graphene channel, which also provide design guidelines for device geometries that exhibit increased viscous effects. The presence of viscous effects near room temperature opens up avenues for functional hydrodynamic devices such as geometric rectifiers like a Tesla valve and charge amplifiers based on electronic Venturi effect.
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Submitted 1 November, 2022;
originally announced November 2022.
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Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
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Redox-controlled conductance of polyoxometalate molecular junctions
Authors:
Cécile Huez,
David Guérin,
Stéphane Lenfant,
Florence Volatron,
Michel Calame,
Mickael L. Perrin,
Anna Proust,
Dominique Vuillaume
Abstract:
We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The…
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We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The analysis of a large current-voltage dataset by unsupervised machine learning and clustering algorithms reveals that the electron transport in the pristine phosphomolybdate junctions leads to symmetric current-voltage curves, controlled by the lowest unoccupied molecular orbital (LUMO) at 0.6 - 0.7 eV above the Fermi energy with ca. 25% of the junctions having a better electronic coupling to the electrodes than the main part of the dataset. This analysis also shows that a small fraction (ca. 18% of the dataset) of the molecules is already reduced. The UV light in situ photoreduced phosphomolybdate junctions are systematically featuring slightly asymmetric current - voltage behaviors, which is ascribed to electron transport mediated by the single occupied molecular orbital (SOMO) nearly at resonance with the Fermi energy of the electrode and by a closely located single unoccupied molecular orbital (SUMO) at ca. 0.3 eV above the SOMO with a weak electronic coupling to the electrodes (ca. 50% of the dataset) or at ca. 0.4 eV but with a better electrode coupling (ca. 50% of the dataset). These results shed lights to the electronic properties of reversible switchable redox polyoxometalates, a key point for potential applications in nanoelectronic devices.
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Submitted 20 September, 2022;
originally announced September 2022.
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Ultimately-scaled electrodes for contacting individual atomically-precise graphene nanoribbons
Authors:
Jian Zhang,
Liu Qian,
Gabriela Borin Barin,
Abdalghani H. S. Daaoub,
Peipei Chen,
Klaus Müllen,
Sara Sangtarash,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
** Zhang,
Michel Calame,
Mickael L. Perrin
Abstract:
Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting in…
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Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical characterization of individual GNRs in a multi-gate device architecture using single-walled carbon nanotubes (SWNTs) as ultimately-scaled electrodes. The GNR-SWNT devices exhibit well-defined quantum transport phenomena, including Coulomb blockade, excited states, and Franck-Condon blockade, all characteristics pointing towards the contacting of an individual GNR. Combined with the multi-gate architecture, this contacting method opens a road for the integration of GNRs in quantum devices to exploit their topologically trivial and non-trivial nature.
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Submitted 9 September, 2022;
originally announced September 2022.
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Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Optimized Graphene Electrodes for contacting Graphene Nanoribbons
Authors:
Oliver Braun,
Jan Overbeck,
Maria El Abbassi,
Silvan Käser,
Roman Furrer,
Antonis Olziersky,
Alexander Flasby,
Gabriela Borin Barin,
Rimah Darawish,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Ivan Shorubalko,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo…
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Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.
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Submitted 25 February, 2021;
originally announced February 2021.
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Spatially map** the thermal conductivity of graphene by an opto-thermal method
Authors:
Oliver Braun,
Roman Furrer,
Pascal Butti,
Kishan R. Thodkar,
Ivan Shorubalko,
Ilaria Zardo,
Michel Calame,
Mickael L. Perrin
Abstract:
Map** the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved…
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Map** the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved assessment of the thermal conductivity of suspended graphene by using a combination of confocal Raman thermometry and a finite-element calculations-based fitting procedure. We demonstrate the working principle of our method by extracting the two-dimensional thermal conductivity map of one pristine suspended single-layer graphene sheet and one irradiated using helium ions. Our method paves the way for spatially resolving the thermal conductivity of other types of layered materials. This is particularly relevant for the design and engineering of nanoscale thermal circuits (e.g. thermal diodes).
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Submitted 15 March, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Benchmark and application of unsupervised classification approaches for univariate data
Authors:
Maria El Abbassi,
Jan Overbeck,
Oliver Braun,
Michel Calame,
Herre S. J. van der Zant,
Mickael L. Perrin
Abstract:
Unsupervised machine learning, and in particular data clustering, is a powerful approach for the analysis of datasets and identification of characteristic features occurring throughout a dataset. It is gaining popularity across scientific disciplines and is particularly useful for applications without a priori knowledge of the data structure. Here, we introduce an approach for unsupervised data cl…
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Unsupervised machine learning, and in particular data clustering, is a powerful approach for the analysis of datasets and identification of characteristic features occurring throughout a dataset. It is gaining popularity across scientific disciplines and is particularly useful for applications without a priori knowledge of the data structure. Here, we introduce an approach for unsupervised data classification of any dataset consisting of a series of univariate measurements. It is therefore ideally suited for a wide range of measurement types. We apply it to the field of nanoelectronics and spectroscopy to identify meaningful structures in data sets. We also provide guidelines for the estimation of the optimum number of clusters. In addition, we have performed an extensive benchmark of novel and existing machine learning approaches and observe significant performance differences. Careful selection of the feature space construction method and clustering algorithms for a specific measurement type can therefore greatly improve classification accuracies.
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Submitted 22 March, 2021; v1 submitted 29 April, 2020;
originally announced April 2020.
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Controlled quantum dot formation in atomically engineered graphene nanoribbons field-effect transistors
Authors:
Maria El Abbassi,
Mickael Perrin,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Oliver Braun,
Colin Lambert,
Qiang Sun,
Thorsten Prechtl,
Akimitsu Narita,
Klaus Mullen,
Pascal Ruffieux,
Hatef Sadeghi,
Roman Fasel,
Michel Calame
Abstract:
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combi…
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Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior resulting in linear IV curves for low bias voltages at room temperature and single-electron transistor behavior for temperatures below 150~K. By performing spectroscopy of the molecular levels at 13~K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs electronic properties upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.
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Submitted 23 December, 2019;
originally announced December 2019.
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A Universal Length-Dependent Vibrational Mode in Graphene Nanoribbons
Authors:
Jan Overbeck,
Gabriela Borin Barin,
Colin Daniels,
Mickael L. Perrin,
Oliver Braun,
Qiang Sun,
Rimah Darawish,
Marta De Luca,
Xiao-Ye Wang,
Tim Dumslaff,
Akimitsu Narita,
Klaus Müllen,
Pascal Ruffieux,
Vincent Meunier,
Roman Fasel,
Michel Calame
Abstract:
Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characteriza…
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Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman active low-energy vibrational mode that is present in atomically precise, bottom-up synthesized armchair graphene nanoribbons (AGNRs). Our Raman study demonstrates that this mode is present in all families of AGNRs and provides information on their length. Our spectroscopic findings are corroborated by scanning tunneling microscopy images and supported by first-principles calculations that allow us to attribute this mode to a longitudinal acoustic phonon. Finally, we show that this mode is a sensitive probe for the overall structural integrity of the ribbons and their interaction with technologically relevant substrates.
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Submitted 14 December, 2019;
originally announced December 2019.
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Optimized substrates and measurement approaches for Raman spectroscopy of graphene nanoribbons
Authors:
Jan Overbeck,
Gabriela Borin Barin,
Colin Daniels,
Mickael Perrin,
Liangbo Liang,
Oliver Braun,
Rimah Darawish,
Bryanna Burkhardt,
Tim Dumslaff,
Xiao-Ye Wang,
Akimitsu Narita,
Klaus Müllen,
Vincent Meunier,
Roman Fasel,
Michel Calame,
Pascal Ruffieux
Abstract:
The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and t…
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The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and to track their quality upon substrate transfer. We present a Raman-optimized (RO) device substrate and an optimized map** approach that allows for acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substrates. We show that this approach is well-suited to routinely monitor the geometry-dependent low-frequency modes of GNRs. In particular, we track the radial breathing-like mode (RBLM) and the shear-like mode (SLM) for 5-, 7- and 9-atom wide armchair GNRs (AGNRs) and compare their frequencies with first-principles calculations.
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Submitted 22 July, 2019; v1 submitted 3 July, 2019;
originally announced July 2019.
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Spin signatures in the electrical response of graphene nanogaps
Authors:
V. M. Garcia-Suarez,
A. Garcia-Fuente,
D. Carrascal,
E. Burzuri,
M. Koole,
H. S. J. van der Zant,
M. El Abbassi,
M. Calame,
J. Ferrer
Abstract:
We analyse the electrical response of narrow graphene nanogaps in search for transport signatures stemming from spin-polarized edge states. We find that the electrical transport across graphene nanogaps having perfectly defined zigzag edges does not carry any spin-related signature. We also analyse the magnetic and electrical properties of nanogaps whose electrodes have wedges that possibly occur…
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We analyse the electrical response of narrow graphene nanogaps in search for transport signatures stemming from spin-polarized edge states. We find that the electrical transport across graphene nanogaps having perfectly defined zigzag edges does not carry any spin-related signature. We also analyse the magnetic and electrical properties of nanogaps whose electrodes have wedges that possibly occur in the currently fabricated nanogaps. These wedges can host spin polarized wedge low-energy states due to the bipartite nature of the graphene lattice. We find that these spin-polarized low-energy modes give rise to low-voltage signatures in the differential conductance and to distinctive features in the stability diagrams. These are caused by fully spin-polarized currents.
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Submitted 19 September, 2018;
originally announced September 2018.
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Light-stimulable molecules/nanoparticles networks for switchable logical functions and reservoir computing
Authors:
Y. Viero,
D. Guerin,
A. Vladyka,
F. Alibart,
S. Lenfant,
M. Calame,
D. Vuillaume
Abstract:
We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are pro…
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We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are prone for light-stimulable reservoir computing. The complex non-linearity of electron transport and dynamics in these highly connected and recurrent networks of molecular junctions exhibit rich high harmonics generation (HHG) required for reservoir computing (RC) approaches. Logical functions and HHG are controlled by the isomerization of the molecules upon light illumination. These results, without direct analogs in semiconductor devices, open new perspectives to molecular electronics in unconventional computing.
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Submitted 7 August, 2018;
originally announced August 2018.
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Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications
Authors:
W. Fu,
M. El Abbassi,
T. Hasler,
M. Jung,
M. Steinacher,
M. Calame,
C. Schönenberger,
G. Puebla-Hellmann,
S. Hellmüller,
T. Ihn,
A. Wallraff
Abstract:
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity…
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We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.
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Submitted 2 January, 2014;
originally announced January 2014.
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Graphene transistors are insensitive to pH changes in solution
Authors:
Wangyang Fu,
Cornelia Nef,
Oren Knopfmacher,
Alexey Tarasov,
Markus Weiss,
Michel Calame,
Christian Schönenberger
Abstract:
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applie…
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We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.
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Submitted 4 May, 2011;
originally announced May 2011.
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Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors
Authors:
A. Tarasov,
W. Fu,
O. Knopfmacher,
J. Brunner,
M. Calame,
C. Schönenberger
Abstract:
Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage rang…
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Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hz bandwidth can be reached.
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Submitted 6 January, 2011; v1 submitted 15 October, 2010;
originally announced October 2010.
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Surface Plasmon Enhanced Photoconductance of Gold Nanoparticle Arrays with Incorporated Alkane Linkers
Authors:
M. A. Mangold,
C. Weiss,
M. Calame,
A. W. Holleitner
Abstract:
We report on a photoconductive gain effect in two-dimensional arrays of gold nanoparticles, in which alkane molecules are inserted. The nanoparticle arrays are formed by a self-assembly process from alkanethiol-coated gold nanoparticles, and subsequently they are patterned on a Si/SiO2 chip by a microcontact printing technique. We find that the photoconductance of the arrays is strongly enhanced…
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We report on a photoconductive gain effect in two-dimensional arrays of gold nanoparticles, in which alkane molecules are inserted. The nanoparticle arrays are formed by a self-assembly process from alkanethiol-coated gold nanoparticles, and subsequently they are patterned on a Si/SiO2 chip by a microcontact printing technique. We find that the photoconductance of the arrays is strongly enhanced at the frequency of the surface plasmon of the nanoparticles. We interpret the observation as a bolometric enhancement of the conductance of the nanoparticle arrays upon excitation of the surface plasmon resonance.
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Submitted 27 February, 2009;
originally announced February 2009.
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Scaling of 1/f noise in tunable break-junctions
Authors:
ZhengMing Wu,
SongMei Wu,
S. Oberholzer,
M. Steinacher,
M. Calame,
C. Schönenberger
Abstract:
We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $Ω$ (many channels) to 10 k$Ω$ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the $S_V\propto V^2$ dependence of the power spectral density $S_V$ on the applied DC voltage $V$. As…
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We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $Ω$ (many channels) to 10 k$Ω$ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the $S_V\propto V^2$ dependence of the power spectral density $S_V$ on the applied DC voltage $V$. As a function of $R$ the normalized noise $S_V/V^2$ shows a pronounced cross-over from $\propto R^3$ for low-ohmic junctions to $\propto R^{1.5}$ for high-ohmic ones. The measured powers of 3 and 1.5 are in agreement with $1/f$-noise generated in the bulk and reflect the transition from diffusive to ballistic transport.
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Submitted 28 September, 2008;
originally announced September 2008.
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Controlled formation of metallic nanowires via Au nanoparticle ac trap**
Authors:
L. Bernard,
M. Calame,
S. J. van der Molen,
J. Liao,
C. Schoenenberger
Abstract:
Applying ac voltages, we trapped gold nanoparticles between microfabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, th…
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Applying ac voltages, we trapped gold nanoparticles between microfabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions.
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Submitted 15 May, 2007;
originally announced May 2007.
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Feedback controlled electromigration in four-terminal nano-junctions
Authors:
Zheng-Ming Wu,
Michael Steinacher,
Roman Huber,
Michel Calame,
Sense Jan van der Molen,
Christian Schonenberger
Abstract:
We have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). We employ four-terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage $U$ over the junction constant. After the initialization phase ($U < 0.2V), during which the temperature $T…
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We have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). We employ four-terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage $U$ over the junction constant. After the initialization phase ($U < 0.2V), during which the temperature $T$ increases by 80-150 degs C, EM sets in shrinking the wire locally. This quickly leads to a transition from the diffusive to a quasi-ballistic regime ($0.2V < U < 0.6V). At the end of this second regime, a gap forms (U > 0.6V). Remarkably, controlled electromigration is still possible in the quasi-ballistic regime.
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Submitted 25 March, 2007;
originally announced March 2007.
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Electrical conductance of molecular junctions by a robust statistical analysis
Authors:
M. Teresa González,
Songmei Wu,
Roman Huber,
Sense J. van der Molen,
Christian Schönenberger,
Michel Calame
Abstract:
We propose an objective and robust method to extract the electrical conductance of single molecules connected to metal electrodes from a set of measured conductance data. Our method roots in the physics of tunneling and is tested on octanedithiol using mechanically controllable break junctions. The single molecule conductance values can be deduced without the need for data selection.
We propose an objective and robust method to extract the electrical conductance of single molecules connected to metal electrodes from a set of measured conductance data. Our method roots in the physics of tunneling and is tested on octanedithiol using mechanically controllable break junctions. The single molecule conductance values can be deduced without the need for data selection.
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Submitted 11 October, 2006;
originally announced October 2006.
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Resonant tunneling through a C60 molecular junction in liquid environment
Authors:
Lucia Grueter,
Fuyong Cheng,
Tero T. Heikkilä,
M. Teresa González,
Francois Diederich,
Christian Schoenenberger,
Michel Calame
Abstract:
We present electronic transport measurements through thiolated C$_{60}$ molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C$_{60}$-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by th…
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We present electronic transport measurements through thiolated C$_{60}$ molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C$_{60}$-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by the environment of the junction as shown by measurements in two distinct solvents. In the framework of a simple resonant tunneling model, we can extract the electronic tunneling rates governing the transport properties of the junctions.
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Submitted 12 July, 2005;
originally announced July 2005.
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Electrical conductance of atomic contacts in liquid environments
Authors:
L. Grüter,
M. T. González,
R. Huber,
M. Calame,
C. Schönenberger
Abstract:
We present measurements of the electrical conductance $G$ at room temperature of mechanically controllable break junctions (MCBJ) fabricated from Au in different solvents (octane, DCM, DMSO, and toluene) and compare with measurements in air and vacuum. In the high conductance regime $G \agt G_0=2e^2/h$, the environment plays a minor role, as proven by the measured conductance histograms, which d…
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We present measurements of the electrical conductance $G$ at room temperature of mechanically controllable break junctions (MCBJ) fabricated from Au in different solvents (octane, DCM, DMSO, and toluene) and compare with measurements in air and vacuum. In the high conductance regime $G \agt G_0=2e^2/h$, the environment plays a minor role, as proven by the measured conductance histograms, which do not depend on the environment. In contrast, the environment significantly affects the electrical properties in the low conductance (tunneling) regime {$G << G_0$}. Here, we observe a systematic and reproducible lowering of the tunneling barrier height $φ$. At shorter distances, a transition to a strongly suppressed apparent barrier height is observed in octane, providing evidence for the layering of solvent molecules at small inter-electrodes separations. The presented experimental configuration offers interesting perspectives for the electrical characterization of single molecules in a controlled environment.
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Submitted 20 April, 2005; v1 submitted 26 October, 2004;
originally announced October 2004.
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Collective pinning of a frozen vortex liquid in ultrathin superconducting YBa_2Cu_3O_7 films
Authors:
M. Calame,
S. E. Korshunov,
Ch. Leemann,
P. Martinoli
Abstract:
The linear dynamic response of the two-dimensional (2D) vortex medium in ultrathin YBa_2Cu_3O_7 films was studied by measuring their ac sheet impedance Z over a broad range of frequencies ω. With decreasing temperature the dissipative component of Z exhibits, at a temperature T*(ω) well above the melting temperature of a 2D vortex crystal, a crossover from a thermally activated regime involving…
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The linear dynamic response of the two-dimensional (2D) vortex medium in ultrathin YBa_2Cu_3O_7 films was studied by measuring their ac sheet impedance Z over a broad range of frequencies ω. With decreasing temperature the dissipative component of Z exhibits, at a temperature T*(ω) well above the melting temperature of a 2D vortex crystal, a crossover from a thermally activated regime involving single vortices to a regime where the response has features consistent with a description in terms of a collectively pinned vortex manifold. This suggests the idea of a vortex liquid which, below T*(ω), appears to be frozen at the time scales 1/ωof the experiments.
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Submitted 20 September, 2000;
originally announced September 2000.
