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Inverse design of artificial skins
Authors:
Zhiguang Liu,
Minkun Cai,
Shenda Hong,
Junli Shi,
Sai Xie,
Chang Liu,
Huifeng Du,
James D. Morin,
Gang Li,
Wang Liu,
Hong Wang,
Ke Tang,
Nicholas X. Fang,
Chuan Fei Guo
Abstract:
Mimicking the perceptual functions of human cutaneous mechanoreceptors, artificial skins or flexible pressure sensors can transduce tactile stimuli to quantitative electrical signals. Conventional methods to design such devices follow a forward structure-to-property routine based on trial-and-error experiments/simulations, which take months or longer to determine one solution valid for one specifi…
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Mimicking the perceptual functions of human cutaneous mechanoreceptors, artificial skins or flexible pressure sensors can transduce tactile stimuli to quantitative electrical signals. Conventional methods to design such devices follow a forward structure-to-property routine based on trial-and-error experiments/simulations, which take months or longer to determine one solution valid for one specific material. Target-oriented inverse design that shows far higher output efficiency has proven effective in other fields, but is still absent for artificial skins because of the difficulties in acquiring big data. Here, we report a property-to-structure inverse design of artificial skins based on small dataset machine learning, exhibiting a comprehensive efficiency at least four orders of magnitude higher than the conventional routine. The inverse routine can predict hundreds of solutions that overcome the intrinsic signal saturation problem for linear response in hours, and the solutions are valid to a variety of materials. Our results demonstrate that the inverse design allowed by small dataset is an efficient and powerful tool to target multifarious applications of artificial skins, which can potentially advance the fields of intelligent robots, advanced healthcare, and human-machine interfaces.
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Submitted 10 April, 2023;
originally announced April 2023.
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Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix
Authors:
Shengru Chen,
Dongke Rong,
Yue Xu,
Miming Cai,
Xinyan Li,
Qinghua Zhang,
Shuai Xu,
Yan-Xing Shang,
Haitao Hong,
Ting Cui,
Qiao **,
Jia-Ou Wang,
Haizhong Guo,
Lin Gu,
Qiang Zheng,
Can Wang,
**xing Zhang,
Gang-Qin Liu,
Kui-juan **,
Er-Jia Guo
Abstract:
High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate th…
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High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.
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Submitted 14 January, 2023;
originally announced January 2023.
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Manipulating single excess electrons in monolayer transition metal dihalide
Authors:
Min Cai,
Yunfan Liang,
Zeyu Jiang,
Mao-Peng Miao,
Zhen-Yu Liu,
Wen-Hao Zhang,
Xin Liao,
Wei Cheng,
Damien West,
Shengbai Zhang,
Ying-Shuang Fu
Abstract:
Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, but yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons with different ori…
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Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, but yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons with different origin, i.e., electronic and conventional polarons, in monolayer CoCl2, that are grown on HOPG substrate via molecular beam epitaxy. Four types of polarons are identified, all inducing upward local band bending, but exhibiting distinct appearances, lattice occupations, polaronic states and local lattice distortions. First principles calculations unveil three types of polarons are stabilized by electron-electron interaction. The type-4 polaron, however, are driven by conventional lattice distortions. All the four types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, allowing precise control of single polarons unprecedently. This finding identifies the rich category of polarons and their feasibility of manipulation in CoCl2, which can be generalized to other transition metal halides.
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Submitted 11 July, 2022;
originally announced July 2022.
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Origami-controlled strain engineering of tunable flat bands and correlated states in folded graphene
Authors:
Li-Zhen Yang,
Ling-Hui Tong,
Cheng-Sheng Liao,
Qilong Wu,
Xiaoshuai Fu,
Yue-Ying Zhou,
Yuan Tian,
Li Zhang,
Lijie Zhang,
Meng-Qiu Cai,
Lin He,
Zhihui Qin,
Long-**g Yin
Abstract:
Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges…
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Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges with scanning tunneling microscope manipulation, we create strain-induced pseudo-magnetic fields as well as resulting flat electronic bands in the curved edges of folded graphene. We show that the intensity of the pseudo-magnetic field can be readily tuned by changing the width of the folding edge due to the edge-width-dependent lattice deformation, leading to the well adjustability of the geometry of flat bands in folded graphene. Furthermore, by creating expected dispersionless flat bands using this technique, the correlation-induced splits of flat bands are successfully observed in the density of states when these bands are partially filled. Our experiment provides a feasible and effective pathway to engineer the system with tunable flat band structures, and establishes a new platform that can be used to realize devisable strain and interaction induced quantum phases.
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Submitted 21 April, 2022;
originally announced April 2022.
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Small polarom formation by electron-electron interaction
Authors:
Yunfan Liang,
Min Cai,
Lang Peng,
Zeyu Jiang,
Damien West,
Ying-Shuang Fu,
Shengbai Zhang
Abstract:
In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in which a lattice distortion traps an itinerant electron (or hole) such that the distortion and carrier move in unison as a single particle with larger effective mass. While this is the traditional view of polarons, the rise o…
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In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in which a lattice distortion traps an itinerant electron (or hole) such that the distortion and carrier move in unison as a single particle with larger effective mass. While this is the traditional view of polarons, the rise of 2D systems, especially strongly correlated ones, open the prospect of electron scattering taking on a larger role in spontaneous carrier localization for such material systems. Here, we show that in transition metal halides, such electron-electron interactions can lead to polaron formation even in the absence of lattice distortion. This suggests an alternative direction for polaron formation, transport, and control in solids. This new mechanism of polaron formation is confirmed by first-principles calculation of 2D transition metal halides, CrI2, CoCl2 and CoBr2. These theoretical predictions are supported by scanning tunneling microscopy/spectroscopy measurements of polarons in CrI2.
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Submitted 16 January, 2023; v1 submitted 4 October, 2021;
originally announced October 2021.
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Pressure-tailored lithium deposition and dissolution in lithium metal batteries
Authors:
Chengcheng Fang,
Bingyu Lu,
Gorakh Pawar,
Minghao Zhang,
Diyi Cheng,
Shuru Chen,
Miguel Ceja,
Jean-Marie Doux,
Mei Cai,
Boryann Liaw,
Ying Shirley Meng
Abstract:
A porous electrode resulting from unregulated Li growth is the major cause of the low Coulombic efficiency and potential safety hazards of rechargeable Li metal batteries. Strategies aiming to achieve large granular Li deposits have been extensively explored; yet, the ideal Li deposits, which consist of large Li particles that are seamlessly packed on the electrode and can be reversibly deposited…
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A porous electrode resulting from unregulated Li growth is the major cause of the low Coulombic efficiency and potential safety hazards of rechargeable Li metal batteries. Strategies aiming to achieve large granular Li deposits have been extensively explored; yet, the ideal Li deposits, which consist of large Li particles that are seamlessly packed on the electrode and can be reversibly deposited and stripped, have never been achieved. Here, by controlling the uniaxial stack pressure during battery operation, a dense Li deposition (99.49% electrode density) with an ideal columnar structure has been achieved. Using multi-scale characterization and simulation, we elucidated the critical role of stack pressure on Li nucleation, growth and dissolution processes, and developed innovative strategies to maintain the ideal Li morphology during extended cycling. The precision manipulation of Li deposition and dissolution is a critical step to enable fast charging and low temperature operation for Li metal batteries.
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Submitted 17 August, 2020;
originally announced August 2020.
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Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na3Bi Films
Authors:
Huinan Xia,
Yang Li,
Min Cai,
Le Qin,
Nianlong Zou,
Lang Peng,
Wenhui Duan,
Yong Xu,
Wenhao Zhang,
Ying-Shuang Fu
Abstract:
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain u…
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Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na3Bi thin films with R3*R3 reconstruction on graphene, and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na3Bi films, providing spectroscopic evidences of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on 3 and 4 monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na3Bi film can be tuned via certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na3Bi films and achieving potential applications in topological devices.
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Submitted 14 August, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Quantifying Inactive Lithium in Lithium Metal Batteries
Authors:
Chengcheng Fang,
**xing Li,
Minghao Zhang,
Yihui Zhang,
Fan Yang,
Jungwoo Z. Lee,
Min-Han Lee,
Judith Alvarado,
Marshall A. Schroeder,
Yangyuchen Yang,
Bingyu Lu,
Nicholas Williams,
Miguel Ceja,
Li Yang,
Mei Cai,
**g Gu,
Kang Xu,
Xuefeng Wang,
Ying Shirley Meng
Abstract:
Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacte…
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Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacted metallic Li0, which together comprise the inactive Li. Here, by introducing a new analytical method, Titration Gas Chromatography (TGC), we can accurately quantify the contribution from metallic Li0 to the total amount of inactive Li. We uncover that the Li0, rather than the electrochemically formed SEI, dominates the inactive Li and capacity loss. Using cryogenic electron microscopies to further study the microstructure and nanostructure of inactive Li, we find that the Li0 is surrounded by insulating SEI, losing the electronic conductive pathway to the bulk electrode. Coupling the measurements of the Li0 global content to observations of its local atomic structure, we reveal the formation mechanism of inactive Li in different types of electrolytes, and identify the true underlying cause of low Coulombic efficiency in Li metal deposition and strip**. We ultimately propose strategies to enable the highly efficient Li deposition and strip** to enable Li metal anode for next generation high energy batteries.
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Submitted 31 May, 2019; v1 submitted 2 November, 2018;
originally announced November 2018.
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Longitudinal Spin Seebeck Effect in Silver Strip on CoFe Film
Authors:
Y. Sheng,
M. Y. Yang,
Y. Cao,
K. M. Cai,
G. N. Wei,
G. H. Yu,
B. Zhang,
X. Q. Ma,
K. Y. Wang
Abstract:
We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared…
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We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared the experimental results between the Ag/CoFe/Cu strip and Cu/CoFe/Cu strip, where two samples processed with the heating power instead of the temperature difference through the thin CoFe film. The respective contributions of the ANE and SSE to thermal voltage were determined, and they have the ratio of 4:1. The spin current injected through CoFe/Ag interface is calculated to be 1.76 mA/W.
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Submitted 28 October, 2015;
originally announced October 2015.
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Transport and Capacitance properties of Charge Density Wave in few layer 2H-TaS2 Devices
Authors:
Y. F. Cao,
K. M. Cai,
L. J. Li,
W. J. Lu,
Y. P. Sun,
K. Y. Wang
Abstract:
We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H…
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We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs.
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Submitted 9 July, 2014;
originally announced July 2014.
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Nanosize confinement induced enhancement of spontaneous polarization in a ferroelectric nanowire
Authors:
M. Q. Cai,
Y. Zheng,
B. Wang,
G. W. Yang
Abstract:
We theoretically showed that the spontaneous polarization in ferroelectric (FE) nanowires (NWs) can be considerably enhanced due to the nanosize confinement by the first-principles calculations. The spontaneous polarization along the wire direction in a fully-relaxed PbTiO3 NW with 1.8 nm diameter is 1.26 times higher than that of bulk counterpart. The tension induced by NW surface curvature count…
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We theoretically showed that the spontaneous polarization in ferroelectric (FE) nanowires (NWs) can be considerably enhanced due to the nanosize confinement by the first-principles calculations. The spontaneous polarization along the wire direction in a fully-relaxed PbTiO3 NW with 1.8 nm diameter is 1.26 times higher than that of bulk counterpart. The tension induced by NW surface curvature counteracts the near-surface depolarizing effect and meanwhile leads to the unusual enhancement of spontaneous polarization. These findings indicated that FE NWs can be promising in the applications of nanodevices.
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Submitted 17 May, 2010;
originally announced May 2010.
