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Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
Authors:
Nick Pant,
Kyle Bushick,
Andrew McAllister,
Woncheol Lee,
Chris G. Van de Walle,
Emmanouil Kioupakis
Abstract:
The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the conf…
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The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.
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Submitted 16 March, 2024;
originally announced March 2024.
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Electron mobility of SnO2 from first principles
Authors:
Amanda Wang,
Kyle Bushick,
Nick Pant,
Woncheol Lee,
Xiao Zhang,
Joshua Leveillee,
Feliciano Giustino,
Samuel Poncé,
Emmanouil Kioupakis
Abstract:
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and do** concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the…
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The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and do** concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and do**-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10^18 cm^-3.
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Submitted 22 April, 2024; v1 submitted 22 January, 2024;
originally announced January 2024.
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Strain Effects on Auger-Meitner Recombination in Silicon
Authors:
Kyle Bushick,
Emmanouil Kioupakis
Abstract:
We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two hole…
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We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. Our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon, and can be leveraged to improve the efficiency of silicon devices.
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Submitted 14 December, 2023; v1 submitted 18 September, 2023;
originally announced September 2023.
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Electron-phonon physics from first principles using the EPW code
Authors:
Hyungjun Lee,
Samuel Poncé,
Kyle Bushick,
Samad Ha**azar,
Jon Lafuente-Bartolome,
Joshua Leveillee,
Chao Lian,
Francesco Macheda,
Hari Paudyal,
Weng Hong Sio,
Marios Zacharias,
Xiao Zhang,
Nicola Bonini,
Emmanouil Kioupakis,
Elena R. Margine,
Feliciano Giustino
Abstract:
EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-d…
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EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-dependent properties and phonon-assisted quantum processes in bulk solids and low-dimensional materials. Here, we report on significant new developments in the code that occurred during the period 2016-2022, namely: a transport module for the calculation of charge carrier mobility and conductivity under electric and magnetic fields within the $\textit{ab initio}$ Boltzmann transport equation; a superconductivity module for the calculation of critical temperature and gap structure in phonon-mediated superconductors within the $\textit{ab initio}$ anisotropic multi-band Eliashberg theory; an optics module for calculations of phonon-assisted indirect transitions; a module for the calculation of small and large polarons without supercells using the $\textit{ab initio}$ polaron equations; and a module for calculating electron-phonon couplings, band structure renormalization, and temperature-dependent optical spectra using the special displacement method. For each capability, we outline the methodology and implementation, and provide example calculations. We describe recent code refactoring to prepare EPW for exascale architectures, we discuss efficient parallelization strategies, and report on extreme parallel scaling tests.
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Submitted 15 February, 2023;
originally announced February 2023.
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Hydrogen in Disordered Titania: Connecting Local Chemistry, Structure, and Stoichiometry through Accelerated Exploration
Authors:
James Chapman,
Kyoung E. Kweon,
Yakun Zhu,
Kyle Bushick,
Leonardus Bimo Bayu Aji,
Christopher Colla,
Nir Goldman,
Nathan Keilbart,
Roger Qui,
Tae Wook Heo,
Brandon C. Wood
Abstract:
Hydrogen incorporation in native surface oxides of metal alloys often controls the onset of metal hydriding, with implications for materials corrosion and hydrogen storage. A key representative example is titania, which forms as a passivating layer on a variety of titanium alloys for structural and functional applications. These oxides tend to be structurally diverse, featuring polymorphic phases,…
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Hydrogen incorporation in native surface oxides of metal alloys often controls the onset of metal hydriding, with implications for materials corrosion and hydrogen storage. A key representative example is titania, which forms as a passivating layer on a variety of titanium alloys for structural and functional applications. These oxides tend to be structurally diverse, featuring polymorphic phases, grain boundaries, and amorphous regions that generate a disparate set of unique local environments for hydrogen. Here, we introduce a workflow that can efficiently and accurately navigate this complexity. First, a machine learning force field, trained on ab initio molecular dynamics simulations, was used to generate amorphous configurations. Density functional theory calculations were then performed on these structures to identify local oxygen environments, which were compared against experimental observations. Second, to classify subtle differences across the disordered configuration space, we employ a graph-based sampling procedure. Finally, local hydrogen binding energies are computed using exhaustive density functional theory calculations on representative configurations. We leverage this methodology to show that hydrogen binding energetics are described by local oxygen coordination, which in turn is affected by stoichiometry. Together these results imply that hydrogen incorporation and transport in TiO$_x$ can be tailored through compositional engineering, with implications for improving performance and durability of titanium-derived alloys in hydrogen environments.
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Submitted 23 August, 2022;
originally announced August 2022.
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Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles
Authors:
Kyle Bushick,
Emmanouil Kioupakis
Abstract:
We present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type…
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We present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type and p-type silicon, demonstrating the critical role of phonons in enabling AMR. We also decompose the overall rates into contributions from specific phonons and electronic valleys to further elucidate the microscopic origins of AMR. Our results highlight potential pathways to modify the AMR rate in silicon via strain engineering.
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Submitted 30 August, 2023; v1 submitted 16 July, 2022;
originally announced July 2022.
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Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO$_2$
Authors:
S. Chae,
K. A. Mengle,
K. Bushick,
J. Lee,
N. Sanders,
Z. Deng,
Z. Mi,
P. F. P. Poudeu,
H. Paik,
J. T. Heron,
E. Kioupakis
Abstract:
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMO…
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Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar do** of UWBG materials will enable a wider range of applications in power electronics as well as deep- UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved do** and transport properties. As an example, we discuss the case of rutile GeO$_2$ (r-GeO$_2$), a water-insoluble GeO$_2$ polytype which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than \b{eta}-Ga$_2$O$_3$. The subsequent realization of single-crystalline r-GeO$_2$ thin films by molecular beam epitaxy provides the opportunity to realize r-GeO$_2$ for electronic applications. Future efforts towards the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled do** in high-quality thin films with lower dislocation densities and optimized film properties.
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Submitted 1 July, 2021; v1 submitted 14 May, 2021;
originally announced May 2021.
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Electron and hole mobility of rutile GeO$_2$ from first principles: an ultrawide-band-gap semiconductor for power electronics
Authors:
Kyle Bushick,
Kelsey A. Mengle,
Sieun Chae,
Emmanouil Kioupakis
Abstract:
Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon c…
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Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO$_2$ and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are $μ_{\text{elec},\perp \vec{c}}$=244 cm$^2$ V$^{-1}$ s$^{-1}$, $μ_{\text{elec},||\vec{c}}$=377 cm$^2$ V$^{-1}$ s$^{-1}$, $μ_{\text{hole},\perp \vec{c}}$=27 cm$^2$ V$^{-1}$ s$^{-1}$, and $μ_{\text{hole},||\vec{c}}$=29 cm$^2$ V$^{-1}$ s$^{-1}$. At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n-type r-GeO$_2$ surpasses several incumbent semiconductors such as Si, SiC, GaN, and $β$-Ga$_2$O$_3$, demonstrating its superior performance in high-power electronic devices.
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Submitted 7 November, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
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Optical properties of cubic boron arsenide
Authors:
Bai Song,
Ke Chen,
Kyle Bushick,
Kelsey A. Mengle,
Fei Tian,
Geethal Amila Gamage,
Zhifeng Ren,
Emmanouil Kioupakis,
Gang Chen
Abstract:
The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at…
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The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at room temperature using spectroscopic ellipsometry as well as transmission and reflection spectroscopy. We further calculate the optical response using density functional and many-body perturbation theory, considering quasiparticle and excitonic corrections. The computed values for the direct and indirect band gaps (4.25 eV and 2.07 eV) agree well with the measured results (4.12 eV and 2.02 eV). Our findings contribute to the effort of using boron arsenide in novel electronic and optoelectronic applications that take advantage of its demonstrated ultrahigh thermal conductivity and predicted high ambipolar carrier mobility.
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Submitted 12 November, 2019;
originally announced November 2019.
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Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility
Authors:
Kyle Bushick,
Sieun Chae,
Zihao Deng,
John Heron,
Emmanouil Kioupakis
Abstract:
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain d…
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BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain decreases the band gap independent of sign or direction. In addition, biaxial tensile strain increases the in-plane electron and hole mobilities by more than 60% compared to the unstrained values due to a reduction of the electron effective mass and of hole interband scattering. Moreover, BAs is shown to be nearly lattice-matched with InGaN and ZnSnN2, two important optoelectronic semiconductors with tunable band gaps by alloying and cation disorder, respectively. The results predict type-II band alignments and determine the absolute band offsets of these two materials with BAs. The combination of the ultra-high thermal conductivity and intrinsic p-type character of BAs, with its high electron and hole mobilities that can be further increased by tensile strain, as well as the lattice-match and the type-II band alignment with intrinsically n-type InGaN and ZnSnN2 demonstrate the potential of BAs heterostructures for electronic and optoelectronic devices.
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Submitted 3 September, 2019;
originally announced September 2019.
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Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections
Authors:
Kyle Bushick,
Kelsey Mengle,
Nocona Sanders,
Emmanouil Kioupakis
Abstract:
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental band gap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate…
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We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental band gap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate the carrier effective masses and report smaller values for the holes than the electrons, indicating higher hole mobility and easier p-type do**. The small difference between the static and high frequency dielectric constants indicates that BAs is only weakly ionic. We also observe that the imaginary part of the dielectric function exhibits a strong absorption peak, which corresponds to parallel bands in the band structure. Our estimated exciton binding energy of 43 meV indicates that excitons are relatively stable against thermal dissociation at room temperature. Our work provides theoretical insights on the fundamental electronic properties of BAs to guide experimental characterization and device applications.
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Submitted 15 January, 2019; v1 submitted 25 September, 2018;
originally announced September 2018.
