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Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers
Authors:
Tatyana V. Ivanova,
Daniel Andres-Penares,
Yi** Wang,
Jiaqiang Yan,
Daniel Forbes,
Servet Ozdemir,
Kenneth S. Burch,
Brian D. Gerardot,
Mauro Brotons-Gisbert
Abstract:
α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thic…
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α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.
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Submitted 9 May, 2024;
originally announced May 2024.
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The interplay of field-tunable strongly correlated states in a multi-orbital moiré system
Authors:
Aidan J. Campbell,
Valerio Vitale,
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Takashi Taniguchi,
Kenji Watanabe,
Johannes Lischner,
Brian D. Gerardot
Abstract:
The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moiré systems, recent observations of Mott insulators and generalized Wigner crystals are well described by triangular lattice single-orbital Hubbard models based on K-valley derived moiré bands. Richer p…
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The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moiré systems, recent observations of Mott insulators and generalized Wigner crystals are well described by triangular lattice single-orbital Hubbard models based on K-valley derived moiré bands. Richer phase diagrams, mapped onto multi-orbital Hubbard models, are possible with hexagonal lattices in $Γ$-valley derived moiré bands and additional layer degrees of freedom. Here we report the tunable interaction between strongly correlated hole states hosted by $Γ$- and K-derived moiré bands in a monolayer MoSe$_2$ / natural WSe$_2$ bilayer device. To precisely probe the nature of the correlated states, we optically characterise the behaviour of exciton-polarons and distinguish the layer and valley degrees of freedom. We find that the honeycomb $Γ$-band gives rise to a charge-transfer insulator described by a two-orbital Hubbard model with inequivalent $Γ_\mathrm{A}$ and $Γ_\mathrm{B}$ orbitals. With an out-of-plane electric field, we re-order the $Γ_\mathrm{B}$- and K-derived bands energetically, driving an abrupt redistribution of carriers to the layer-polarized K orbital where new correlated states are observed. Finally, by fine-tuning the band-alignment, we obtain degeneracy of the $Γ_\mathrm{B}$ and K orbitals at the Fermi level. In this critical condition, stable Wigner crystals with carriers distributed across the two orbitals are observed until the Fermi-level reaches one hole per lattice site, whereupon the system collapses into a filled $Γ_\mathrm{B}$ orbital. Our results establish a platform to investigate the interplay of charge, spin, lattice, and layer geometry in multi-orbital Hubbard model Hamiltonians.
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Submitted 9 March, 2023;
originally announced March 2023.
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Highly Tunable Ground and Excited State Excitonic Dipoles in Multilayer 2H-MoSe$_2$
Authors:
Shun Feng,
Aidan Campbell,
Mauro Brotons-Gisbert,
Daniel Andres-Penares,
Hyeonjun Baek,
Takashi Taniguchi,
Kenji Watanabe,
Bernhard Urbaszek,
Iann C. Gerber,
Brian D. Gerardot
Abstract:
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-p…
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The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe$_2$ crystals exhibit electric-field-driven coupling with the ground ($1s$) and excited states ($2s$) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to $0.73 \pm 0.01$ enm), high energy tunability (up to $\sim$ 200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state ($2s$) interlayer excitons and their coupling with the intralayer excitons states ($1s$ and $2s$). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe$_2$ as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.
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Submitted 19 January, 2023; v1 submitted 29 December, 2022;
originally announced December 2022.
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Van der Waals Materials for Applications in Nanophotonics
Authors:
Panaiot G. Zotev,
Yue Wang,
Daniel Andres-Penares,
Toby Severs Millard,
Sam Randerson,
Xuerong Hu,
Luca Sortino,
Charalambos Louca,
Mauro Brotons-Gisbert,
Tahiyat Huq,
Stefano Vezzoli,
Riccardo Sapienza,
Thomas F. Krauss,
Brian Gerardot,
Alexander I. Tartakovskii
Abstract:
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v…
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Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.
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Submitted 31 October, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Moiré straintronics: a universal platform for reconfigurable quantum materials
Authors:
M. Kögl,
P. Soubelet,
M. Brotons-Gisbert,
A. V. Stier,
B. D. Gerardot,
J. J. Finley
Abstract:
Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a give…
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Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in-situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.
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Submitted 25 July, 2022;
originally announced July 2022.
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Exciton-polarons in the presence of strongly correlated electronic states in a MoSe$_2$/WSe$_2$ moiré superlattice
Authors:
Aidan J. Campbell,
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Valerio Vitale,
Takashi Taniguchi,
Kenji Watanabe,
Johannes Lischner,
Brian D. Gerardot
Abstract:
Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sens…
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Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sensitive to strong correlations. Here, we investigate the behaviour of excitons dressed by a Fermi sea localised by the moiré superlattice of a molybdenum diselenide (MoSe$_2$) / tungsten diselenide (WSe$_2$) twisted hetero-bilayer. At a multitude of fractional fillings of the moiré lattice, we observe ordering of both electrons and holes into stable correlated electronic states. Magneto-optical measurements reveal extraordinary Zeeman splittings of the exciton-polarons due to exchange interactions in the correlated hole phases, with a maximum close to the correlated state at one hole per site. The temperature dependence of the Zeeman splitting reveals antiferromagnetic ordering of the correlated holes across a wide range of fractional fillings. Our results illustrate the nature of exciton-polarons in the presence of strongly correlated electronic states and reveal the rich potential of the MoSe$_2$/WSe$_2$ platform for investigations of Fermi-Hubbard and Bose-Hubbard physics.
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Submitted 28 April, 2022; v1 submitted 17 February, 2022;
originally announced February 2022.
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Optical and dielectric properties of MoO$_3$ nanosheets for van der Waals heterostructures
Authors:
Daniel Andres-Penares,
Mauro Brotons-Gisbert,
Cristian Bonato,
Juan F. Sánchez-Royo,
Brian D. Gerardot
Abstract:
Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nit…
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Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportunities to replace hBN in certain applications that require transparent thin layers with additional optical degrees of freedom. Here we investigate the potential of single-crystalline Molybdenum Oxide (MoO$_3$) as an alternative 2D insulator for the design of nanodevices that require precise adjustment of the light polarization at the nanometer scale. First, we measure the wavelength-dependent refractive indices of MoO$_3$ along its three main crystal axes and determine the in-plane and out-of-plane anisotropy of its optical properties. We find the birefringence in MoO$_3$ nanosheets compares favorably with other 2D materials that exhibit strong birefringence, such as black phosphorus, ReS$_2$, or ReSe$_2$, in particular in the visible spectral range where MoO$_3$ has the unique advantage of transparency. Finally, we demonstrate the suitability of MoO$_3$ for dielectric encapsulation by reporting linewidth narrowing and reduced inhomogeneous broadening of 2D excitons and optically active quantum emitters, respectively, in a prototypical monolayer transition-metal dichalcogenide semiconductor. These results show the potential of MoO$_3$ as a 2D dielectric layer for manipulation of the light polarization in vertical 2D heterostructures.
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Submitted 8 November, 2021;
originally announced November 2021.
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Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks
Authors:
Lukas Sigl,
Mirco Troue,
Manuel Katzer,
Malte Selig,
Florian Sigger,
Jonas Kiemle,
Mauro Brotons-Gisbert,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot,
Andreas Knorr,
Ursula Wurstbauer,
Alexander W. Holleitner
Abstract:
We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out…
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We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles.
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Submitted 2 November, 2021;
originally announced November 2021.
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Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions
Authors:
Hyeonjun Baek,
Mauro Brotons-Gisbert,
Aidan Campbell,
Valerio Vitale,
Johannes Lischner,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transitio…
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Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transition metal dichalcogenide (TMD) based systems. In addition, in TMD based systems, the moiré potential landscape can trap interlayer excitons (IX) at specific atomic registries. Here we report that spatially isolated trapped IX in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By map** the spatial positions of individual trapped IX, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial do** of the heterobilayer, neutral trapped IX form charged IX (IX trions) uniformly with a binding energy of ~7 meV. Upon further do**, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterise Coulomb interaction energies, visualise charge correlated states, or probe local disorder in a moiré superlattice.
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Submitted 29 July, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Moiré-trapped interlayer trions in a charge-tunable WSe$_2$/MoSe$_2$ heterobilayer
Authors:
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Aidan Campbell,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Transition metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moiré patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with $C_3$ symmetry. However, the narrow emission linewid…
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Transition metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moiré patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with $C_3$ symmetry. However, the narrow emission linewidths of the quantum emitters contrast with a broad ensemble IX emission observed in nominally identical heterobilayers, opening a debate regarding the origin of IX emission. Here we report the continuous evolution from a few trapped IXs to an ensemble of IXs with both triplet and singlet spin configurations in a gate-tunable $2H$-MoSe$_2$/WSe$_2$ heterobilayer. We observe signatures of dipolar interactions in the IX ensemble regime which, when combined with magneto-optical spectroscopy, reveal that the narrow quantum-dot-like and broad ensemble emission originate from IXs trapped in moiré potentials with the same atomic registry. Finally, electron do** leads to the formation of three different species of localised negative trions with contrasting spin-valley configurations, among which we observe both intervalley and intravalley IX trions with spin-triplet optical transitions. Our results identify the origin of IX emission in MoSe$_2$/WSe$_2$ heterobilayers and highlight the important role of exciton-exciton interactions and Fermi-level control in these highly tunable quantum materials.
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Submitted 13 August, 2021; v1 submitted 19 January, 2021;
originally announced January 2021.
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Coherent Dynamics in Quantum Emitters under Dichromatic Excitation
Authors:
Z. X. Koong,
E. Scerri,
M. Rambach,
M. Cygorek,
M. Brotons-Gisbert,
R. Picard,
Y. Ma,
S. I. Park,
J. D. Song,
E. M. Gauger,
B. D. Gerardot
Abstract:
We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exci…
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We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exciting pulse and the quantum emitter transition for ideal two-level systems due to cancellation of the accumulated pulse area. However, any additional interactions that interfere with cancellation of the accumulated pulse area may lead to a finite stationary population inversion. Our spectroscopic results of a solid-state two-level system show that while coupling to lattice vibrations helps to improve the inversion efficiency up to 50\% under symmetric driving, coherent population control and a larger amount of inversion are possible using asymmetric dichromatic excitation, which we achieve by adjusting the ratio of the intensities between the red and blue-detuned pulses. Our measured results, supported by simulations using a real-time path-integral method, offer a new perspective towards realising efficient, background-free photon generation and extraction.
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Submitted 4 September, 2020;
originally announced September 2020.
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Highly tunable quantum light from moiré trapped excitons
Authors:
Hyeonjun Baek,
Mauro Brotons-Gisbert,
Zhe Xian Koong,
Aidan Campbell,
Markus Rambach,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moiré trap** potentials for excitons which are predicted to create…
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Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moiré trap** potentials for excitons which are predicted to create arrays of quantum emitters. While signatures of moiré trapped excitons have been observed, their quantum nature has yet to be confirmed. Here we report photon antibunching from single moiré trapped interlayer excitons in a heterobilayer. Via polarization resolved magneto-optical spectroscopy, we demonstrate the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moiré potentials. Finally, using an out-of-plane electric field, we exploit the large permanent dipole of interlayer excitons to achieve large DC Stark tuning, up to 40 meV, of the quantum emitters. Our results confirm the quantum nature of moiré confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or tune single emitters into resonance with cavity modes or other emitters.
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Submitted 15 January, 2020; v1 submitted 13 January, 2020;
originally announced January 2020.
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Spin-layer locking of interlayer excitons trapped in moiré potentials
Authors:
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Alejandro Molina-Sánchez,
Aidan Campbell,
Eleanor Scerri,
Daniel White,
Kenji Watanabe,
Takashi Taniguchi,
Cristian Bonato,
Brian D. Gerardot
Abstract:
Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moiré patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlay…
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Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moiré patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlayer exciton (IXs). Here we report the observation of spin-layer locking of IXs trapped in moiré potentials formed in a heterostructure of bilayer 2H-MoSe$_2$ and monolayer WSe$_2$. The phenomenon of locked electron spin and layer index leads to two quantum-confined IX species with distinct spin-layer-valley configurations. Furthermore, we observe that the atomic registries of the moiré trap** sites in the three layers are intrinsically locked together due to the 2H-type stacking characteristic of bilayer TMDs. These results identify the layer index as a useful degree of freedom to engineer tunable few-level quantum systems in two-dimensional heterostructures.
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Submitted 2 June, 2020; v1 submitted 10 August, 2019;
originally announced August 2019.
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Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe$_2$-WSe$_2$ Heterointerface
Authors:
Malte Kremser,
Mauro Brotons-Gisbert,
Johannes Knörzer,
Janine Gückelhorn,
Moritz Meyer,
Matteo Barbone,
Andreas V. Stier,
Brian D. Gerardot,
Kai Müller,
Jonathan J. Finley
Abstract:
Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation eff…
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Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar within a nanoscale confinement potential induced by placing a MoSe$_2$-WSe$_2$ hetero-bilayer (HBL) onto an array of SiO$_2$ nanopillars. We control the mean occupation of the IX trap via the optical excitation level and observe discrete sharp-line emission from different configurations of interacting IXs. We identify these features as different multiparticle states with $N_{IX}\sim1-5$ via their power dependencies and directly measure the hierarchy of dipolar and exchange interactions as $N_{IX}$ increases. The interlayer biexciton ($N_{IX}=2$) is found to be an emission doublet that is blue-shifted from the single exciton by $ΔE=(8.4\pm0.6)$ meV and split by $2J=(1.2\pm0.5)$ meV. The blueshift is even more pronounced for triexcitons ($(12.4\pm0.4)$ meV), quadexcitons ($(15.5\pm0.6)$ meV) and quintexcitons ($(18.2\pm0.8)$ meV). These values are shown to be mutually consistent with numerical modelling of dipolar excitons confined to a harmonic trap** potential having a confinement lengthscale in the range $\ell\approx 3$ nm. Our results contribute to the understanding of interactions between IXs in TMD HBLs at the discrete limit of only a few excitations and represent a key step towards exploring quantum correlations between them.
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Submitted 24 June, 2020; v1 submitted 20 July, 2019;
originally announced July 2019.
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Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
Authors:
Mauro Brotons-Gisbert,
Raphaël Proux,
Raphaël Picard,
Daniel Andres-Penares,
Artur Branny,
Alejandro Molina-Sánchez,
Juan F. Sánchez-Royo,
Brian D. Gerardot
Abstract:
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and…
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Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe$_2$ and MoSe$_2$. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe$_2$ and MoSe$_2$ at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
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Submitted 26 September, 2019; v1 submitted 20 January, 2019;
originally announced January 2019.
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Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
Authors:
Mauro Brotons-Gisbert,
Artur Branny,
Santosh Kumar,
Raphaël Picard,
Raphaël Proux,
Mason Gray,
Kenneth S. Burch,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes ca…
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Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot. Depending on the tunnel-coupling strength, this capability facilitates single spin quantum bits or coherent many-body interactions between the confined spin and the Fermi reservoir. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins, tunnel barriers down to the atomic limit or a Fermi reservoir beyond the conventional flat density of states. However, gate-control of vdW nanostructures at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (~8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.
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Submitted 24 April, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Resonance fluorescence and laser spectroscopy of three-dimensionally confined excitons in monolayer WSe$_2$
Authors:
S. Kumar,
M. Brotons-Gisbert,
R. Al-Khuzheyri,
A. Branny,
G. Ballesteros-Garcia,
J. F. Sanchez-Royo,
B. D. Gerardot
Abstract:
Resonant optical excitation of few-level quantum systems enables coherent quantum control, resonance fluorescence, and direct characterization of dephasing mechanisms. Experimental demonstrations have been achieved in a variety of atomic and solid-state systems. An alternative but intriguing quantum photonic platform is based on single layer transition metal chalcogenide semiconductors, which exhi…
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Resonant optical excitation of few-level quantum systems enables coherent quantum control, resonance fluorescence, and direct characterization of dephasing mechanisms. Experimental demonstrations have been achieved in a variety of atomic and solid-state systems. An alternative but intriguing quantum photonic platform is based on single layer transition metal chalcogenide semiconductors, which exhibit a direct band-gap with optically addressable exciton valley-pseudospins in a uniquely two-dimensional form. Here we perform resonance and near-resonance excitation of three-dimensionally confined excitons in monolayer WSe$_2$ to reveal near ideal single photon fluorescence with count rates up to 3 MHz and uncover a weakly-fluorescent exciton state ~ 5 meV blue-shifted from the ground-state exciton. We perform high-resolution photoluminescence excitation spectroscopy of the localized excitons, providing important information to unravel the precise nature of the quantum states. Successful demonstration of resonance fluorescence paves the way to probe the localized exciton coherence. Moreover, these results yield a route for investigations of the spin and valley coherence of confined excitons in two-dimensional semiconductors.
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Submitted 19 April, 2016;
originally announced April 2016.
