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All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Authors:
Johannes Aberl,
Enrique Prado Navarrete,
Merve Karaman,
Diego Haya Enriquez,
Christoph Wilflingseder,
Andreas Salomon,
Daniel Primetzhofer,
Markus Andreas Schubert,
Giovanni Capellini,
Thomas Fromherz,
Peter Deák,
Péter Udvarhelyi,
Li Song,
Ádám Gali,
Moritz Brehm
Abstract:
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically inn…
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Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and do**, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities.
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Submitted 21 May, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials
Authors:
Matteo Savaresi,
Abel Martínez-Suárez,
Davide Tedeschi,
Giuseppe Ronco,
Aurelio Hierro-Rodríguez,
Stephen McVitie,
Sandra Stroj,
Johannes Aberl,
Moritz Brehm,
Victor M. García-Suárez,
Michele B. Rota,
Pablo Alonso-González,
Javier Martín-Sánchez,
Rinaldo Trotta
Abstract:
The discovery of quantum emitters in two-dimensional materials has triggered a surge of research to assess their suitability for quantum photonics. While their microscopic origin is still the subject of intense studies, ordered arrays of quantum emitters are routinely fabricated using static strain-gradients, which are used to drive excitons toward localized regions of the 2D crystals where quantu…
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The discovery of quantum emitters in two-dimensional materials has triggered a surge of research to assess their suitability for quantum photonics. While their microscopic origin is still the subject of intense studies, ordered arrays of quantum emitters are routinely fabricated using static strain-gradients, which are used to drive excitons toward localized regions of the 2D crystals where quantum-light-emission takes place. However, the possibility of using strain in a dynamic fashion to control the appearance of individual quantum emitters has never been explored so far. In this work, we tackle this challenge by introducing a novel hybrid semiconductor-piezoelectric device in which WSe2 monolayers are integrated onto piezoelectric pillars delivering both static and dynamic strains. Static strains are first used to induce the formation of quantum emitters, whose emission shows photon anti-bunching. Their excitonic population and emission energy are then reversibly controlled via the application of a voltage to the piezoelectric pillar. Numerical simulations combined with drift-diffusion equations show that these effects are due to a strain-induced modification of the confining-potential landscape, which in turn leads to a net redistribution of excitons among the different quantum emitters. Our work provides relevant insights into the role of strain in the formation of quantum emitters in 2D materials and suggests a method to switch them on and off on demand.
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Submitted 24 January, 2023;
originally announced January 2023.
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Lattice models from CFT on surfaces with holes I: Torus partition function via two lattice cells
Authors:
Enrico M. Brehm,
Ingo Runkel
Abstract:
We construct a one-parameter family of lattice models starting from a two-dimensional rational conformal field theory on a torus with a regular lattice of holes, each of which is equipped with a conformal boundary condition. The lattice model is obtained by cutting the surface into triangles with clipped-off edges using open channel factorisation. The parameter is given by the hole radius. At fini…
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We construct a one-parameter family of lattice models starting from a two-dimensional rational conformal field theory on a torus with a regular lattice of holes, each of which is equipped with a conformal boundary condition. The lattice model is obtained by cutting the surface into triangles with clipped-off edges using open channel factorisation. The parameter is given by the hole radius. At finite radius, high energy states are suppressed and the model is effectively finite. In the zero-radius limit, it recovers the CFT amplitude exactly. In the touching hole limit, one obtains a topological field theory.
If one chooses a special conformal boundary condition which we call "cloaking boundary condition", then for each value of the radius the fusion category of topological line defects of the CFT is contained in the lattice model. The fact that the full topological symmetry of the initial CFT is realised exactly is a key feature of our lattice models.
We provide an explicit recursive procedure to evaluate the interaction vertex on arbitrary states. As an example, we study the lattice model obtained from the Ising CFT on a torus with one hole, decomposed into two lattice cells. We numerically compare the truncated lattice model to the CFT expression obtained from expanding the boundary state in terms of the hole radius and we find good agreement at intermediate values of the radius.
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Submitted 28 April, 2022; v1 submitted 2 December, 2021;
originally announced December 2021.
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Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Authors:
Jeffrey Schuster,
Johannes Aberl,
Lada Vukušić,
Lukas Spindlberger,
Heiko Groiss,
Thomas Fromherz,
Moritz Brehm,
Friedrich Schäffler
Abstract:
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs.…
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The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.
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Submitted 27 October, 2021;
originally announced October 2021.
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Correlation functions and quantum measures of descendant states
Authors:
Enrico M. Brehm,
Matteo Broccoli
Abstract:
We discuss a computer implementation of a recursive formula to calculate correlation functions of descendant states in two-dimensional CFT. This allows us to obtain any $N$-point function of vacuum descendants, or to express the correlator as a differential operator acting on the respective primary correlator in case of non-vacuum descendants. With this tool at hand, we then study some entanglemen…
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We discuss a computer implementation of a recursive formula to calculate correlation functions of descendant states in two-dimensional CFT. This allows us to obtain any $N$-point function of vacuum descendants, or to express the correlator as a differential operator acting on the respective primary correlator in case of non-vacuum descendants. With this tool at hand, we then study some entanglement and distinguishability measures between descendant states, namely the Rényi entropy, trace square distance and sandwiched Rényi divergence. Our results provide a test of the conjectured Rényi QNEC and new tools to analyse the holographic description of descendant states at large $c$.
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Submitted 21 May, 2021; v1 submitted 21 December, 2020;
originally announced December 2020.
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From flat to tilted: gradual interfaces in organic thin film growth
Authors:
Laura Katharina Scarbath-Evers,
René Hammer,
Dorothea Golze,
Martin Brehm,
Daniel Sebastiani,
Wolf Widdra
Abstract:
We investigate domain formation and local morphology of thin films of $α$-sexithiophene ($α$-6T) on Au(100) beyond monolayer coverage by combining high resolution scanning tunneling microscopy (STM) experiments with electronic structure theory calculations and computational structure search. We report a layerwise growth of highly-ordered enantiopure domains. For the second and third layer, we show…
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We investigate domain formation and local morphology of thin films of $α$-sexithiophene ($α$-6T) on Au(100) beyond monolayer coverage by combining high resolution scanning tunneling microscopy (STM) experiments with electronic structure theory calculations and computational structure search. We report a layerwise growth of highly-ordered enantiopure domains. For the second and third layer, we show that the molecular orbitals of individual $α$-6T molecules can be well resolved by STM, providing access to detailed information on the molecular orientation. We find that already in the second layer the molecules abandon the flat adsorption structure of the monolayer and adopt a tilted conformation. Although the observed tilted arrangement resembles the orientation of $α$-6T in the bulk, the observed morphology does not yet correspond to a well-defined surface of the $α$-6T bulk structure. A similar behavior is found for the third layer indicating a growth mechanism where the bulk structure is gradually adopted over several layers.
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Submitted 17 March, 2020;
originally announced March 2020.
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Aspects of the S transformation Bootstrap
Authors:
Enrico M. Brehm,
Diptarka Das
Abstract:
We review and systematize two (analytic) bootstrap techniques in two-dimensional conformal field theories using the S-modular transformation. The first one gives universal results in asymptotic regimes by relating extreme temperatures. Along with the presentation of known results, we use this technique to also derive asymptotic formulae for the Zamolodchikov recursion coefficients which match prev…
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We review and systematize two (analytic) bootstrap techniques in two-dimensional conformal field theories using the S-modular transformation. The first one gives universal results in asymptotic regimes by relating extreme temperatures. Along with the presentation of known results, we use this technique to also derive asymptotic formulae for the Zamolodchikov recursion coefficients which match previous conjectures from numerics and from Regge asymptotic analysis. The second technique focuses on intermediate temperatures. We use it to sketch a methodology to derive a bound on off-diagonal squared OPE coefficients, as well as to improve existing bounds on the spectrum in case of non-negative diagonal OPE coefficients.
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Submitted 5 February, 2020; v1 submitted 6 November, 2019;
originally announced November 2019.
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On KdV characters in large c CFTs
Authors:
Enrico M. Brehm,
Diptarka Das
Abstract:
Two-dimensional conformal field theories with just Virasoro symmetry are endowed with integrable structure. We review how to construct the integrable charges in a two-dimensional conformal field theory and how to relate them to the charges of quantum Sinh-Gordon theory when c>25. We then explicitly calculate the single charge characters in the large c limit for all charges and thereby reveal how t…
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Two-dimensional conformal field theories with just Virasoro symmetry are endowed with integrable structure. We review how to construct the integrable charges in a two-dimensional conformal field theory and how to relate them to the charges of quantum Sinh-Gordon theory when c>25. We then explicitly calculate the single charge characters in the large c limit for all charges and thereby reveal how their degeneracies grow within one module. This, in particular, allows us to approximate the characters in the limit of small chemical potential, which source the respective charges. The latter give us insights into possible transformation properties of the characters. We also comment on the full generalized Gibbs ensemble and approximations to pure states.
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Submitted 9 October, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Probing thermality beyond the diagonal
Authors:
Enrico M. Brehm,
Diptarka Das,
Shouvik Datta
Abstract:
We investigate the off-diagonal sector of eigenstate thermalization using both local and non-local probes in 2-dimensional conformal field theories. A novel analysis of the asymptotics of OPE coefficients via the modular bootstrap is performed to extract the behaviour of the off-diagonal matrix elements. We also probe this sector using semi-classical heavy-light Virasoro blocks. The results demons…
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We investigate the off-diagonal sector of eigenstate thermalization using both local and non-local probes in 2-dimensional conformal field theories. A novel analysis of the asymptotics of OPE coefficients via the modular bootstrap is performed to extract the behaviour of the off-diagonal matrix elements. We also probe this sector using semi-classical heavy-light Virasoro blocks. The results demonstrate signatures of thermality and confirms the entropic suppression of the off-diagonal elements as necessitated by the eigenstate thermalization hypothesis.
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Submitted 21 April, 2018;
originally announced April 2018.
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Free-running Sn precipitates: an efficient phase separation mechanism for metastable GeSn epilayers
Authors:
Heiko Groiss,
Martin Glaser,
Magdalena Schatzl,
Moritz Brehm,
Dagmar Gerthsen,
Dietmar Roth,
Peter Bauer,
Friedrich Schäffler
Abstract:
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we observe that decomposition of metastable epilayers with Sn concentrations around 10% sets in above 230°C, the eutectic temperature of the Ge/Sn system. T…
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We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we observe that decomposition of metastable epilayers with Sn concentrations around 10% sets in above 230°C, the eutectic temperature of the Ge/Sn system. Time-resolved annealing experiments in a scanning electron microscope reveal the crucial role of liquid Sn droplets in this phase separation process. Driven by a gradient of the chemical potential, the Sn droplets move on the surface along preferential crystallographic directions, thereby taking up Sn and Ge from the strained GeSn layer at their leading edge. While Sn-uptake increases the volume of the melt, dissolved Ge becomes re-deposited by a liquid-phase epitaxial process at the trailing edge of the droplet. Secondary droplets are launched from the rims of the single-crystalline Ge trails into intact regions of the GeSn film, leading to an avalanche-like transformation front between the GeSn film and re-deposited Ge. This process makes phase separation of metastable GeSn layers particularly efficient at rather low temperatures.
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Submitted 15 May, 2017;
originally announced May 2017.
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Entanglement and topological interfaces
Authors:
Enrico M. Brehm,
Ilka Brunner,
Daniel Jaud,
Cornelius Schmidt-Colinet
Abstract:
In this paper we consider entanglement entropies in two-dimensional conformal field theories in the presence of topological interfaces. Tracing over one side of the interface, the leading term of the entropy remains unchanged. The interface however adds a subleading contribution, which can be interpreted as a relative (Kullback-Leibler) entropy with respect to the situation with no defect inserted…
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In this paper we consider entanglement entropies in two-dimensional conformal field theories in the presence of topological interfaces. Tracing over one side of the interface, the leading term of the entropy remains unchanged. The interface however adds a subleading contribution, which can be interpreted as a relative (Kullback-Leibler) entropy with respect to the situation with no defect inserted. Reinterpreting boundaries as topological interfaces of a chiral half of the full theory, we rederive the left/right entanglement entropy in analogy with the interface case. We discuss WZW models and toroidal bosonic theories as examples.
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Submitted 25 February, 2016; v1 submitted 18 December, 2015;
originally announced December 2015.
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Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
Authors:
M. Grydlik,
F. Hackl,
H. Groiss,
M. Glaser,
A. Halilovic,
T. Fromherz,
W. Jantsch,
F. Schäffler,
M. Brehm
Abstract:
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a…
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Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system.
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Submitted 13 May, 2015;
originally announced May 2015.
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Entanglement entropy through conformal interfaces in the 2D Ising model
Authors:
Enrico M. Brehm,
Ilka Brunner
Abstract:
We consider the entanglement entropy for the 2D Ising model at the conformal fixed point in the presence of interfaces. More precisely, we investigate the situation where the two subsystems are separated by a defect line that preserves conformal invariance. Using the replica trick, we compute the entanglement entropy between the two subsystems. We observe that the entropy, just like in the case wi…
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We consider the entanglement entropy for the 2D Ising model at the conformal fixed point in the presence of interfaces. More precisely, we investigate the situation where the two subsystems are separated by a defect line that preserves conformal invariance. Using the replica trick, we compute the entanglement entropy between the two subsystems. We observe that the entropy, just like in the case without defects, shows a logarithmic scaling behavior with respect to the size of the system. Here, the prefactor of the logarithm depends on the strength of the defect encoded in the transmission coefficient. We also comment on the supersymmetric case.
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Submitted 22 May, 2015; v1 submitted 11 May, 2015;
originally announced May 2015.
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Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Authors:
P. Klenovský,
M. Brehm,
V. Křápek,
E. Lausecker,
D. Munzar,
F. Hackl,
H. Steiner,
T. Fromherz,
G. Bauer,
J. Humlíček
Abstract:
The pum** intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attri…
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The pum** intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At approximately I>3W/cm^2, additional bands with a nearly quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
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Submitted 27 September, 2012;
originally announced September 2012.
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Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
Authors:
M. M. Qazilbash,
M. Brehm,
G. O. Andreev,
A. Frenzel,
P. -C. Ho,
Byung-Gyu Chae,
Bong-Jun Kim,
Sun ** Yun,
Hyun-Tak Kim,
A. V. Balatsky,
O. G. Shpyrko,
M. B. Maple,
F. Keilmann,
D. N. Basov
Abstract:
We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the I…
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We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model.
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Submitted 2 April, 2009;
originally announced April 2009.
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Electrostatic modification of infrared response in gated structures based on VO2
Authors:
M. M. Qazilbash,
Z. Q. Li,
V. Podzorov,
M. Brehm,
F. Keilmann,
B. G. Chae,
H. T. Kim,
D. N. Basov
Abstract:
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic do** of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal tr…
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We investigate the changes in the infrared response due to charge carriers introduced by electrostatic do** of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.
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Submitted 30 June, 2008;
originally announced June 2008.
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Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
Authors:
M. M. Qazilbash,
M. Brehm,
Byung-Gyu Chae,
P. -C. Ho,
G. O. Andreev,
Bong-Jun Kim,
Sun ** Yun,
A. V. Balatsky,
M. B. Maple,
F. Keilmann,
Hyun-Tak Kim,
D. N. Basov
Abstract:
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator…
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Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by do** or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.
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Submitted 8 January, 2008;
originally announced January 2008.
