Showing 1–50 of 78 results for author: Brandt, O

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

Authors: **gxuan Kang, Rose-Mary Jose, Miriam Oliva, Thomas Auzelle, Mikel Gómez Ruiz, Abbes Tahraoui, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar

Abstract: The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceeds in good agreement with the void growth model. With increasing annealing duration, the size and shape uniformity of the nanoislands improves. This im… ▽ More The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceeds in good agreement with the void growth model. With increasing annealing duration, the size and shape uniformity of the nanoislands improves. This improvement speeds up for higher annealing temperature. After an optimum annealing duration, the size uniformity deteriorates due to the coalescence of neighboring islands. By changing the Pt film thickness, the nanoisland diameter and density can be quantitatively controlled in a way predicted by a simple thermodynamic model. We demonstrate the uniformity of the nanoisland ensembles for an area larger than 1 cm$^2$. GaN nanowires are fabricated by a sequence of dry and wet etching steps, and these nanowires inherit the diameters and density of the Pt nanoisland ensemble used as a mask. Our study achieves advancements in size uniformity and range of obtainable diameters compared to previous works. This simple, economical, and scalable approach to the top-down fabrication of nanowires is useful for applications requiring large and uniform nanowire ensembles with controllable dimensions. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Authors: Sergio Fernández-Garrido, Johannes K. Zettler, Lutz Geelhaar, Oliver Brandt

Abstract: We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. The analysis of the temporal evolution of nanowire ensembles prepared under a wide variety of growth conditions allows us to construct a growth diagram… ▽ More We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. The analysis of the temporal evolution of nanowire ensembles prepared under a wide variety of growth conditions allows us to construct a growth diagram which can be used to predict the average delay time that precedes nanowire formation. △ Less

Submitted 30 January, 2024; originally announced February 2024.

Journal ref: Nano Lett. 2015, 15, 3, 1930

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Authors: Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld, Tobias Gotschke, Javier Grandal, Enrique Calleja, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for bo… ▽ More We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets towards the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratios. △ Less

Submitted 30 January, 2024; originally announced February 2024.

Journal ref: Nano Lett. 2013, 13, 7, 3274

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Authors: Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, Raffaella Calarco, Lutz Geelhaar, Achim Trampert, Oliver Brandt

Abstract: We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(000$\bar{1}$) substrates to ensure a well-defined polarity and an absence of structural and morphological defects.… ▽ More We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(000$\bar{1}$) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si$_{x}$N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance. △ Less

Submitted 30 January, 2024; originally announced February 2024.

Journal ref: Nano Lett. 2012, 12, 12, 6119

ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Authors: Philipp John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle

Abstract: We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congrue… ▽ More We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds. △ Less

Submitted 1 February, 2024; originally announced February 2024.

Comments: Main Paper: 10 pages, 5 figures; Supplementary Information: 2 pages, 1 figure

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Authors: J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, S. Fernández-Garrido

Abstract: In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) usin… ▽ More In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy. △ Less

Submitted 30 January, 2024; originally announced February 2024.

Journal ref: Cryst. Growth Des. 2015, 15, 8, 4104

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

Authors: Sergio Fernàndez-Garrido, Kai U. Ubben, Jens Herfort, Cunxu Gao, Oliver Brandt

Abstract: We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si] = 5 $\times$ 10$^{18}$ cm$^{-3}$. The Schottky barrier height of th… ▽ More We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si] = 5 $\times$ 10$^{18}$ cm$^{-3}$. The Schottky barrier height of the clean, epitaxial Fe/GaN interface is determined by both current-voltage-temperature and capacitance-voltage techniques to be (1.47 $\pm$ 0.09) eV. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Journal ref: Appl. Phys. Lett. 101, 032404 (2012)

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Authors: Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao, Lauren A. Galves, Bharat Sharma, Pierre Corfdir, Gabriele Calabrese, Ziani de Souza Schiaber, Carsten Pfüller, Achim Trampert, João Marcelo J. Lopes, Oliver Brandt, Lutz Geelhaar

Abstract: We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N expos… ▽ More We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Journal ref: Nano Lett. 2017, 17, 9, 5213

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Authors: Johannes K. Zettler, Pierre Corfdir, Christian Hauswald, Esperanza Luna, Uwe Jahn, Timur Flissikowski, Emanuel Schmidt, Carsten Ronning, Achim Trampert, Lutz Geelhaar, Holger T. Grahn, Oliver Brandt, Sergio Fernández-Garrido

Abstract: The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s… ▽ More The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, after peer review

Journal ref: Nano Letters 2016, 16, 2, 973

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Authors: M Gómez Ruiz, Aron Castro, Jesús Herranz, Alessandra da Silva, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Jonas Lähnemann

Abstract: (In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanow… ▽ More (In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) fl ux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In,Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

Authors: David van Treeck, Jonas Lähnemann, Guanhui Gao, Sergio Fernández Garrido, Oliver Brandt, Lutz Geelhaar

Abstract: Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accord… ▽ More Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accordingly. Using multiple iterations of this process, we achieve the growth of homogeneous shells on a single side facet of the nanowires. For higher In content and thus lattice mismatch, we observe a strain-induced bending of the nanowire heterostructures. The incorporation of In and the resulting emission spectra are systematically investigated as a function of both the growth temperature and the In/Ga flux ratio. △ Less

Submitted 1 September, 2023; v1 submitted 20 July, 2023; originally announced July 2023.

Journal ref: APL Materials 11, 091120 (2023)

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Authors: David van Treeck, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar

Abstract: Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. T… ▽ More Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the NW length than their binary GaN counterparts. △ Less

Submitted 18 August, 2023; v1 submitted 22 June, 2023; originally announced June 2023.

Journal ref: Nanotechnology 34, 485603 (2023)

Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy

Authors: Duc V. Dinh, Frank Peiris, Jonas Lähnemann, Oliver Brandt

Abstract: An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic applications. Using spectroscopic ellipsometry in a spectral range from far infrared to far ultraviolet (0.045-8.5 eV), we determine $n$ and $k$ of ScN layers gro… ▽ More An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic applications. Using spectroscopic ellipsometry in a spectral range from far infrared to far ultraviolet (0.045-8.5 eV), we determine $n$ and $k$ of ScN layers grown on Al$_{2}$O$_{3}$(0001) substrates by plasma-assisted molecular beam epitaxy. Fits of ellipsometry data return the energies of four oscillators representing critical points in the band structure of ScN, namely, 2.03, 3.89, 5.33, and 6.95 eV. As the infrared range is dominated by free carriers, the vibrational properties of the layers are examined by Raman spectroscopy. Despite the rocksalt structure of ScN, several first-order phonon modes are observed, suggesting a high density of point defects consistent with the high electron density deduced from Hall measurements. Finally, photoluminescence measurements reveal an emission band slightly above the lowest direct bandgap. We attribute the redshift of the peak emission energy from 2.3 to 2.2 eV with increasing layer thickness to a reduction of the O concentration in the layers. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Authors: Philipp John, Mikel Gómez Ruiz, Len van Deurzen, Jonas Lähnemann, Achim Trampert, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle

Abstract: We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of… ▽ More We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length is maximised at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al$_2$O$_3$ substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy do** of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiN$_x$ or AlO$_x$ passivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require an ex situ surface passivation. △ Less

Submitted 1 February, 2024; v1 submitted 15 June, 2023; originally announced June 2023.

Comments: Main Paper: 13 pages, 5 figures; Supporting Information: 4 pages, 4 figures

Journal ref: Nanotechnology 34, 465605 (2023)

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang, Yong** Cho, David Anthony Muller, Huili Grace Xing, Debdeep Jena, Oliver Brandt, Jonas Lähnemann

Abstract: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission… ▽ More Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the $Γ_{5}$ free exciton binding energy of 57 meV. △ Less

Submitted 23 July, 2023; v1 submitted 17 May, 2023; originally announced May 2023.

Journal ref: APL Materials 11, 081109 (2023)

Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency

Authors: Miriam Oliva, Timur Flissikowski, Michał Góra, Jonas Lähnemann, Jesús Herranz, Ryan B. Lewis, Oliver Marquardt, Manfred Ramsteiner, Lutz Geelhaar, Oliver Brandt

Abstract: GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to understand their interaction with light governing the absorption and extraction efficiency, as well as the carrier recombination dynamics determining the… ▽ More GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to understand their interaction with light governing the absorption and extraction efficiency, as well as the carrier recombination dynamics determining the radiative efficiency. Here, we study the spontaneous emission of zincblende GaAs/(Al,Ga)As core/shell nanowire arrays by $μ$-photoluminescence spectroscopy. These ordered arrays are synthesized on patterned Si(111) substrates using molecular beam epitaxy, and exhibit an exceptionally low degree of polytypism for interwire separations exceeding a critical value. We record emission spectra over more than five orders of excitation density for both steady-state and pulsed excitation to identify the nature of the recombination channels. An abrupt Mott transition from excitonic to electron-hole-plasma recombination is observed, and the corresponding Mott density is derived. Combining these experiments with simulations and additional direct measurements of the external quantum efficiency using a perfect diffuse reflector as reference, we are able to extract the internal quantum efficiency as a function of carrier density and temperature as well as the extraction efficiency of the nanowire array. The results vividly document the high potential of GaAs/(Al,Ga)As core/shell nanowires for efficient light emitters integrated on the Si platform. Furthermore, the methodology established in this work can be applied to nanowires of any other materials system of interest for optoelectronic applications. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Journal ref: ACS Appl. Nano Mater. 6, 15278-15293 (2023)

Lattice parameters of Sc$_{\boldsymbol{\mathsf{x}}}$Al$_{\boldsymbol{\mathsf{1-x}}}$N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Authors: Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt

Abstract: An accurate knowledge of the lattice parameters of the new nitride Sc$_\textit{x}$Al$_\textit{1-x}$N is essential for understanding the elastic and piezoelectric properties of this compound as well as for the ability to engineer its strain state in heterostructures. Using high-resolution x-ray diffractometry, we determine the lattice parameters of 100-nm-thick undoped Sc$_\textit{x}$Al… ▽ More An accurate knowledge of the lattice parameters of the new nitride Sc$_\textit{x}$Al$_\textit{1-x}$N is essential for understanding the elastic and piezoelectric properties of this compound as well as for the ability to engineer its strain state in heterostructures. Using high-resolution x-ray diffractometry, we determine the lattice parameters of 100-nm-thick undoped Sc$_\textit{x}$Al$_\textit{1-x}$N layers grown on GaN(0001) templates by plasma-assisted molecular beam epitaxy. The Sc content $\textit{x}$ of the layers is measured independently by both x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy and ranges from 0 to 0.25. The in-plane lattice parameter of the layers linearly increases with increasing $\textit{x}$, while their out-of-plane lattice parameter remains constant. Layers with $\textit{x}$ $\approx$ 0.09 are found to be lattice matched to GaN, resulting in a smooth surface and a structural perfection equivalent to that of the GaN underlayer. In addition, a two-dimensional electron gas is induced at the Sc$_\textit{x}$Al$_\textit{1-x}$N/GaN heterointerface, with the highest sheet electron density and mobility observed for lattice-matched conditions. △ Less

Submitted 14 February, 2023; v1 submitted 30 November, 2022; originally announced November 2022.

Journal ref: Appl. Phys. Lett. 122, 152103 (2023)

Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111)

Authors: Thomas Auzelle, Miriam Oliva, Philipp John, Manfred Ramsteiner, Lutz Geelhaar, Oliver Brandt

Abstract: The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we e… ▽ More The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN$_x$ patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by \{100\} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN$_x$ atoms prior to the GaN growth. By varying the amount of pre-deposited SiN$_x$, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN$_x$ patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials. △ Less

Submitted 8 August, 2023; v1 submitted 11 November, 2022; originally announced November 2022.

Journal ref: Nanotechnology, 34, 375602 (2023)

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Authors: Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski, Sebastian Meister, Abbes Tahraoui, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle

Abstract: Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, f… ▽ More Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, followed by dry etching and wet etching in hot KOH. The SiN$_x$ is found to work as an etch stop during wet etching in hot KOH. Arrays with NW diameters down to $(33 \pm5)\,$nm can be achieved with a yield exceeding $99.9\,\%$. Further reduction of the NW diameter down to $5\,$nm is obtained by applying digital etching which consists in plasma oxidation followed by wet etching in hot KOH. The NW radial etching depth is tuned by varying the RF power during plasma oxidation. NW breaking or bundling is observed for diameters below $\approx 20\,$nm, an effect that is associated to capillary forces acting on the NWs during sample drying in air. This effect can be principally mitigated using critical point dryers. Interestingly, this mechanical instability of the NWs is found to occur at much smaller aspect ratios than what is predicted for models dealing with macroscopic elastic rods. Explicit calculations of buckling states show an improved agreement when considering an inclined water surface, as can be expected if water assembles into droplets. The proposed fabrication route can be principally applied to any GaN/SiN$_{x}$ nanostructures and allows regrowth after removal of the SiN$_{x}$ mask. △ Less

Submitted 6 November, 2022; originally announced November 2022.

X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

Authors: Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese, David van Treeck, Albert Kwasniewski, Carsten Richter, Sergio Fernández-Garrido, Oliver Brandt

Abstract: GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate bet… ▽ More GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al$_{2}$O$_{3}$ and GaN. These topotaxial crystallites in Ti film, formed due to interfacial reactions and N exposure, possess fairly little misorientation with respect to Al$_{2}$O$_{3}$. As a result, GaN NWs grow on the top TiN layer possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modeled by the Monte Carlo method taking into account the orientational distributions of NWs, a variety of their cross-sectional shapes and sizes, and roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of $(1\bar{1}00)$ and $(11\bar{2}0)$ side facets are determined. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Journal ref: J. Appl. Cryst. 56, 439-448 (2023)

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Authors: Thomas Auzelle, Chiara Sinito, Jonas Lähnemann, Guanhui Gao, Timur Flissikowski, Achim Trampert, Sergio Fernández-Garrido, Oliver Brandt

Abstract: We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially ident… ▽ More We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially identical quantum well widths and Al content. Regardless of the crystal orientation, the exciton decay in the MQWs at 10 K is dominantly radiative and the photoluminescence (PL) energy follows the quantum confined Stark effect (QCSE) for different quantum well widths. A prominent free-to-bound transition involving interface shallow donors is, however, visible for the N-polar MQWs. At room-temperature, in contrast, the exciton decay in all samples is dominated by nonradiative recombination taking place at point defects, presumably Ca or V N located at the bottom QW interface. Remarkably, the N-polar MQWs exhibit a higher PL intensity and longer decay times than the Ga-polar MQWs at room-temperature. This improved internal quantum efficiency is attributed to the beneficial orientation of the internal electric field that effectively reduces the capture rate of minority carriers by interface trap states. △ Less

Submitted 13 May, 2022; v1 submitted 25 November, 2021; originally announced November 2021.

Journal ref: Physical Review Applied, 17, 044030 (2022)

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Authors: Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen

Abstract: In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by several orders of magnitude for low source temperatures. Using line-of-sight quadrupole mass spectrometry, we identify the dominant contribution to the total flux emanating from Sn and Ga sources at these temperatures t… ▽ More In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by several orders of magnitude for low source temperatures. Using line-of-sight quadrupole mass spectrometry, we identify the dominant contribution to the total flux emanating from Sn and Ga sources at these temperatures to be due to the unintentional formation and evaporation of the respective suboxides SnO and Ga$_{2}$O. We quantitatively describe this phenomenon by a rate-equation model that takes into account the O background pressure, the resulting formation of the suboxides via oxidation of the metal source, and their subsequent thermally activated evaporation. As a result, the total flux composed of the metal and the suboxide fluxes exhibit an \textsf{S}-shape temperature dependence instead of the expected linear one in an Arrhenius plot, in excellent agreement with the available experimental data. Our model reveals that the thermally activated regimes at low and high temperatures are almost exclusively due to suboxide and metal evaporation, respectively, joined by an intermediate plateau-like regime in which the flux is limited by the available amount of O. An important suboxide contribution is expected for all elemental sources whose suboxide exhibits a higher vapor pressure than the element, such as B, Ga, In, La, Si, Ge, Sn, Sb, Mo, Nb, Ru, Ta, V, and W. This contribution can play a decisive role in the molecular beam epitaxy of oxides, including multicomponent or complex oxides, from elemental sources. Finally, our model predicts suboxide-dominated growth in low-pressure chemical vapor deposition of Ga$_{2}$O$_{3}$ and In$_{2}$O$_{3}$. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells

Authors: Hanno Küpers, Ryan B. Lewis, Pierre Corfdir, Michael Niehle, Timur Flissikowski, Holger T. Grahn, Achim Trampert, Oliver Brandt, Lutz Geelhaar

Abstract: Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell qu… ▽ More Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not im**e at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlap** fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells. △ Less

Submitted 23 June, 2021; originally announced June 2021.

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Authors: Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld, Anastasya E. Kireeva, Uwe Jahn, Caroline Chèze, Raffaella Calarco, Oliver Brandt

Abstract: We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and compari… ▽ More We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipole-like energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk GaN and hence also in buried heterostructures. △ Less

Submitted 23 November, 2021; v1 submitted 30 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 17, 024019 (2022)

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion

Authors: Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann, Timur Flissikowski, Carsten Pfüller, Karl K. Sabelfeld, Anastasya E. Kireeva, Caroline Chèze, Raffaella Calarco, Holger T. Grahn, Uwe Jahn

Abstract: We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatur… ▽ More We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatures lower than 120 K, a quantum capture process has to be taken into account in addition. Combining the diffusion length extracted from these profiles and the effective carrier lifetime measured by time-resolved photoluminescence experiments, we deduce the carrier diffusivity as a function of temperature. The experimental values are found to be close to theoretical ones for the ambipolar diffusivity of free carriers limited only by intrinsic phonon scattering. This agreement is shown to be fortuitous. The high diffusivity at low temperatures instead originates from an increasing participation of excitons in the diffusion process. △ Less

Submitted 23 November, 2021; v1 submitted 29 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 17, 024018 (2022)

External control of GaN band bending using phosphonate self-assembled monolayers

Authors: T. Auzelle, F. Ullrich, S. Hietzschold, C. Sinito, S. Brackmann, W. Kowalsky, E. Mankel, O. Brandt, R. Lovrincic, S. Fernández-Garrido

Abstract: We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN… ▽ More We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Journal ref: ACS Appl. Mater. Interfaces 2021, 13, 3, 4626-4635

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

Authors: G. Calabrese, D. van Treeck, V. M. Kaganer, O. Konovalov, P. Corfdir, C. Sinito, L. Geelhaar, O. Brandt, S. Fernández-Garrido

Abstract: We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the… ▽ More We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the average nanowire radius and results from the surface stress acting on the nanowire sidewalls. The superposition of strain from nanowires with different radii in the same ensemble results in a broadening of the Bragg peaks that mimics an inhomogeneous strain on a macroscopic scale. The nanowire ensembles show a small blueshift of the bound-exciton transitions in photoluminescence spectra, reflecting the existence of a compensating in-plane compressive strain, as further supported by grazing incidence x-ray diffraction measurements carried out at a synchrotron. By combining X-ray diffraction and photoluminescence spectroscopy, the surface stress components $f_{x}$ and $f_{z}$ of the air-exposed GaN$\{1\bar100\}$ planes that constitute the nanowire sidewalls are determined experimentally to be 2.25 and $-0.7$~N/m, respectively. △ Less

Submitted 22 February, 2020; originally announced February 2020.

Comments: 22 pages, 8 figures

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

Authors: Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld, Anastasya E. Kireeva, Jonas Lähnemann, Carsten Pfüller, Timur Flissikowski, Caroline Chèze, Klaus Biermann, Raffaella Calarco, Oliver Brandt

Abstract: The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded… ▽ More The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded in thick GaN and GaAs layers. Thin (Al,Ga)N and (Al,Ga)As barriers, respectively, prevent carriers diffusing in the GaN and GaAs layers to reach the well, which would broaden the profiles. The experimental cathodoluminescence profiles are found to be systematically wider than the energy loss distributions calculated by means of the Monte Carlo program CASINO, with the width monotonically increasing with decreasing temperature. This effect is observed for both GaN and GaAs and becomes more pronounced for higher acceleration voltages. We discuss this phenomenon in terms of both, the electron-phonon interaction controlling the energy relaxation of hot carriers, and the shape of the initial carrier distribution. Finally, we present a phenomenological approach to simulate the carrier generation volume that can be used for the investigation of the temperature dependence of carrier diffusion. △ Less

Submitted 23 November, 2021; v1 submitted 20 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Applied 17, 024017 (2022)

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields

Authors: T. Auzelle, M. Azadmand, T. Flissikowski, M. Ramsteiner, K. Morgenroth, C. Stemmler, S. Fernández-Garrido, S. Sanguinetti, H. T. Grahn, L. Geelhaar, O. Brandt

Abstract: GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a… ▽ More GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter. △ Less

Submitted 4 February, 2021; v1 submitted 17 January, 2020; originally announced January 2020.

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

Authors: Mani Azadmand, Tomas Auzelle, Jonas Lähnemann, Guanhui Gao, Lars Nicolai, Manfred Ramsteiner, Achim Trampert, Stefano Sanguinetti, Oliver Brandt, Lutz Geelhaar

Abstract: We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the subst… ▽ More We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Journal ref: physica status solidi: rapid research letters 14, 1900615 (2020)

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Authors: Jesús Herranz, Pierre Corfdir, Esperanza Luna, Uwe Jahn, Ryan B. Lewis, Lutz Schrottke, Jonas Lähnemann, Abbes Tahraoui, Achim Trampert, Oliver Brandt, Lutz Geelhaar

Abstract: Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonic… ▽ More Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $μ$m. △ Less

Submitted 18 December, 2019; v1 submitted 27 August, 2019; originally announced August 2019.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Nano Materials (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see this https://doi.org/10.1021/acsanm.9b01866, the supporting information is available (free of charge) under the same link

Journal ref: ACS Applied Nano Materials 3, 165 (2020)

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

Authors: David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann, Mattia Musolino, Abbes Tahraoui, Oliver Brandt, Andreas Waag, Henning Riechert, Lutz Geelhaar

Abstract: We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single… ▽ More We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by the modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool. △ Less

Submitted 23 August, 2019; originally announced August 2019.

Journal ref: Beilstein J. Nanotechnol. 10, 1177 (2019)

Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

Authors: Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller, Karl K. Sabelfeld, Anastasya E. Kireeva, Oliver Brandt

Abstract: We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN{0001} surface. We calculate and measure hyperspectral cathodoluminescence maps around the dislocation outcrop for temperatures between 10 to 200 K. Contrary to common belief, the cathodoluminescence intensity contrast i… ▽ More We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN{0001} surface. We calculate and measure hyperspectral cathodoluminescence maps around the dislocation outcrop for temperatures between 10 to 200 K. Contrary to common belief, the cathodoluminescence intensity contrast is only weakly affected by exciton diffusion, but is caused primarily by exciton dissociation in the piezoelectric field at the dislocation outcrop. Hence, the extension of the dark spots around dislocations in the luminescence maps cannot be used to determine the exciton diffusion length. However, the cathodoluminescence energy contrast, reflecting the local bandgap variation in the dislocation strain field, does sensitively depend on the exciton diffusion length and hence enables its experimental determination. △ Less

Submitted 6 September, 2019; v1 submitted 13 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Applied 12, 054038 (2019)

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Authors: Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann, Kilian Wimmer, Abbes Tahraoui, Oliver Brandt

Abstract: We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 $μ$m, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under h… ▽ More We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 $μ$m, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under high vacuum conditions, is analyzed \emph{in situ} by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectromety. During the sublimation process, the GaN(0001) surface vanishes, giving way to the formation of semi-polar $\lbrace1\bar{1}03\rbrace$ facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of ($3.54 \pm 0.07$) eV and an exponential prefactor of $1.58\times10^{31}$ atoms cm$^{-2}$ s$^{-1}$. The analysis of the samples by low-temperature cathodoluminescence spectroscopy reveals that, in contrast to dry etching, the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Comments: This is the accepted manuscript version of an article that appeared in Nanoscale Advances. The CC BY-NC 3.0 license applies, see http://creativecommons.org/licenses/by-nc/3.0/

Journal ref: Nanoscale Advances 1, 1893 (2019)

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Authors: C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé Vílchez, S. Kölling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernández-Garrido, O. Brandt

Abstract: Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua… ▽ More Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization do** of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature. △ Less

Submitted 8 August, 2019; v1 submitted 10 May, 2019; originally announced May 2019.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01521, the supporting information is available (free of charge) under the same link

Journal ref: Nano Letters 19, 5938 (2019)

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Authors: Vladimir M. Kaganer, Karl K. Sabelfeld, Oliver Brandt

Abstract: The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a piezoelectric volume charge. The electric field produced by this charge distribution is strong enough to dissociate free excitons at distances over 100 nm from the… ▽ More The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a piezoelectric volume charge. The electric field produced by this charge distribution is strong enough to dissociate free excitons at distances over 100 nm from the dislocation line. We evaluate the impact of this effect on cathodoluminescence images of dislocations. △ Less

Submitted 10 January, 2018; originally announced January 2018.

Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

Authors: David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz, Vladimir M. Kaganer, Oliver Brandt, Sergio Fernández-Garrido, Lutz Geelhaar

Abstract: We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number… ▽ More We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number density and exceeds here 1.5 μm, coalescence takes place by bundling, i.e. the same process as on Si. By analyzing the nearest neighbor distance distribution, we identify diffusion-induced repulsion of neighboring nanowires as the main mechanism limiting the nanowire number density during nucleation on TiN. Since on Si the final number density is determined by shadowing of the im**ing molecular beams by existing nanowires, it is the difference in adatom surface diffusion that enables on TiN the formation of nanowire ensembles with reduced number density. These nanowire ensembles combine properties that make them a promising basis for the growth of core-shell heterostructures. △ Less

Submitted 9 January, 2018; originally announced January 2018.

Comments: The final publication is available at link.springer.com

Journal ref: Nano Research, Volume 11, Issue 1, 565 (2018)

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Authors: C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, O. Brandt, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, O. Brandt

Abstract: N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperatur… ▽ More N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: 10 pages, 2 figures, 1 table

MSC Class: 00A79; 74A35

Journal ref: Appl. Phys. Lett. 112, 022102 (2018)

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Authors: Pierre Corfdir, Ryan B. Lewis, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spe… ▽ More We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spectroscopy reveals that for small quantum dots emitting between 1.3 and 1.4 eV, the electron-hole coherence length in and perpendicular to the (110) plane is on the order of 5 and 2 nm, respectively. The quantum dot photoluminescence is linearly polarized, and both binding and antibinding biexcitons are observed, two findings that we associate with the strain in the (110) plane This strain leads to piezoelectric fields and to a strong mixing between heavy and light hole states, and offers the possibility to tune the degree of linear polarization of the exciton photoluminescence as well as the sign of the binding energy of biexcitons. △ Less

Submitted 27 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 045435 (2017)

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character

Authors: Oliver Marquardt, Manfred Ramsteiner, Pierre Corfdir, Lutz Geelhaar, Oliver Brandt

Abstract: We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures… ▽ More We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the non-negligible lattice mismatch between the two crystal phases in polytype GaAs nanostructures, a fact that was ignored in previous studies of these structures. We present a systematic study of the influence of intrinsic and extrinsic strain on the electron ground state for both purely zincblende and wurtzite nanowires as well as for polytype superlattices. The coexistence of the two conduction bands and their opposite strain dependence results in complex electronic and optical properties of GaAs polytype nanostructures. In particular, both the energy and the polarization of the lowest intersubband transition depends on the relative fraction of the two crystal phases in the nanowire. △ Less

Submitted 27 April, 2017; originally announced April 2017.

Comments: 8 pages / 6 figures

Journal ref: Phys. Rev. B 95, 245309 (2017)

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

Authors: Ryan B. Lewis, Pierre Corfdir, Jesús Herranz, Hanno Küpers, Uwe Jahn, Oliver Brandt, Lutz Geelhaar

Abstract: Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {1-10} sidewall facets of GaAs nan… ▽ More Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {1-10} sidewall facets of GaAs nanowires. The presence of surface Bi induces the formation of InAs 3D islands by a process resembling the Stranski-Krastanov mechanism, which does not occur in the absence of Bi on these surfaces. The InAs 3D islands nucleate at the corners of the {1-10} facets above a critical shell thickness and then elongate along <110> directions in the plane of the nanowire sidewalls. Exploiting this growth mechanism, we realize a series of novel hierarchical nanostructures, ranging from InAs quantum dots on single {1-10} nanowire facets to zig-zag shaped nanorings completely encircling nanowire cores. Photoluminescence spectroscopy and cathodoluminescence spectral line scans reveal that small surfactant-induced InAs 3D islands behave as optically active quantum dots. This work illustrates how surfactants can provide an unprecedented level of external control over nanostructure self-assembly. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Comments: 12 pages, 4 figures

Journal ref: Nano Lett. 2017, 17, 4255-4260

Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency

Authors: F. Feix, T. Flissikowski, K. K. Sabelfeld, V. M. Kaganer, M. Wölz, L. Geelhaar, H. T. Grahn, O. Brandt

Abstract: We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence… ▽ More We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of photoluminescence transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power law decay for (In,Ga)N/GaN{0001} quantum wells and disks. △ Less

Submitted 20 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Applied 8, 014032 (2017)

Quantum dot self-assembly driven by a surfactant-induced morphological instability

Authors: Ryan B. Lewis, Pierre Corfdir, Hong Li, Jesús Herranz, Carsten Pfüller, Oliver Brandt, Lutz Geelhaar

Abstract: In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a morphological phase transition can be induced on-demand using surfactants. We explore Bi as a surfactant in the growth of InAs on GaAs(110), and find that the presenc… ▽ More In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a morphological phase transition can be induced on-demand using surfactants. We explore Bi as a surfactant in the growth of InAs on GaAs(110), and find that the presence of surface Bi induces Stranski-Krastanov growth of 3D islands, while growth without Bi always favors 2D layer formation. Exposing a static two monolayer thick InAs layer to Bi rapidly transforms the layer into 3D islands. Density functional theory calculations reveal that Bi reduces the energetic cost of 3D island formation by modifying surface energies. These 3D nanostructures behave as optically active quantum dots. This work illustrates how surfactants can enable quantum dot self-assembly where it otherwise would not occur. △ Less

Submitted 15 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Lett. 119, 086101 (2017)

In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Authors: C. Chèze, F. Feix, M. Anikeeva, T. Schulz, M. Albrecht, H. Riechert, O. Brandt, R. Calarco

Abstract: We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 mo… ▽ More We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures. △ Less

Submitted 17 January, 2017; originally announced January 2017.

Comments: 9 pages, 2 figures Submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 110 (2017) 072104

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)

Authors: K. K. Sabelfeld, V. M. Kaganer, C. Pfüller, O. Brandt

Abstract: We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a… ▽ More We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of $6\times10^{5}$~cm$^{-2}$. △ Less

Submitted 21 November, 2016; originally announced November 2016.

Journal ref: J. Phys. D: Appl. Phys. 50, 405101 (2017)

Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study

Authors: Vladimir M. Kaganer, Bernd Jenichen, Oliver Brandt

Abstract: The coalescence in dense arrays of spontaneously formed GaN nanowires proceeds by bundling: adjacent nanowires bend and merge at their top, thus reducing their surface energy at the expense of the elastic energy of bending. We give a theoretical description of the energetics of this bundling process. The bending energy is shown to be substantially reduced by the creation of dislocations at the coa… ▽ More The coalescence in dense arrays of spontaneously formed GaN nanowires proceeds by bundling: adjacent nanowires bend and merge at their top, thus reducing their surface energy at the expense of the elastic energy of bending. We give a theoretical description of the energetics of this bundling process. The bending energy is shown to be substantially reduced by the creation of dislocations at the coalescence joints. A comparison of experimental and calculated x-ray diffraction profiles from ensembles of bundled nanowires demonstrates that a large part of the bending energy is indeed relaxed by plastic deformation. The residual bending manifests itself by extended tails of the diffraction profiles. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Applied 6, 064023 (2016)

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

Authors: Oliver Marquardt, Thilo Krause, Vladimir Kaganer, Javier Martin-Sanchez, Michael Hanke, Oliver Brandt

Abstract: We present a systematic study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures. We employ and evaluate analytical and numerical approaches to compute strain and polarization potentials. These two ingredients then enter an eight-band k.p model to compute electron and hole ground state… ▽ More We present a systematic study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures. We employ and evaluate analytical and numerical approaches to compute strain and polarization potentials. These two ingredients then enter an eight-band k.p model to compute electron and hole ground states and energies. Our analysis reveals that for a sufficiently large ratio between the thickness of the (In,Ga)N disk and the diameter of the nanowire, the elastic relaxation leads to a significant reduction of the built-in electrostatic potential in comparison to a planar system of similar layer thickness and In content. However, a complete elimination of the built-in potential cannot be achieved in axial nanowire heterostructures. Nevertheless, the reduction of the built-in electrostatic potential leads to a significant modification of the electron and hole energies. Our findings indicate that the range of accessible ground state transition energies in an axial (In,Ga)N/GaN nanowire heterostructure is limited due to the reduced influence of polarization potentials for thicker disks. Additionally, we find that strain and polarization potentials induce complex confinement features of electrons and holes, which depend on the In content, shape, and dimensions of the heterostructure. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Authors: Carsten Pfüller, Pierre Corfdir, Christian Hauswald, Timur Flissikowski, Xiang Kong, Johannes K. Zettler, Sergio Fernández-Garrido, Pınar Doğan, Holger T. Grahn, Achim Trampert, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of sho… ▽ More We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of N- and Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries. △ Less

Submitted 19 October, 2016; v1 submitted 14 July, 2016; originally announced July 2016.

Comments: 24 pages, 12 figures, 1 table

Journal ref: Phys. Rev. B 94, 155308 (2016)

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

Authors: Jonas Lähnemann, Timur Flissikowski, Martin Wölz, Lutz Geelhaar, Holger T. Grahn, Oliver Brandt, Uwe Jahn

Abstract: Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trap** at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewall… ▽ More Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trap** at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics. △ Less

Submitted 12 October, 2017; v1 submitted 12 July, 2016; originally announced July 2016.

Comments: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/27/45/455706

Journal ref: Nanotechnology 27, 455706 (2016)

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Authors: Felix Feix, Timur Flissikowski, Caroline Chèze, Raffaella Calarco, Holger T. Grahn, Oliver Brandt

Abstract: We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power la… ▽ More We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model. △ Less

Submitted 19 July, 2016; v1 submitted 3 May, 2016; originally announced May 2016.

Comments: 10 pages, 3 figures

Journal ref: Appl. Phys. Lett. 109, 042104 (2016)