Showing 1–50 of 96 results for author: Brandbyge, M

Robust quantum engineering of current flow in carbon nanostructures at room temperature

Authors: Gaetano Calogero, Isaac Alcón, Onurcan Kaya, Nick Papior, Aron W. Cummings, Mads Brandbyge, Stephan Roche

Abstract: Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI… ▽ More Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI), long studied in the field of single-molecule electronics, has been proposed as the most effective way to achieve such control with molecular-scale precision. However, for practical applications, it is essential that such QI-engineering remains effective near or above room temperature. To assess this important point, here we combine large-scale molecular dynamics simulations and quantum transport calculations and focus our study on NPGs formed as arrays of laterally bonded GNRs. By considering various NPGs with different inter-GNR chemical connections we disentangle the different factors determining electronic transport in these carbon nanomaterials at 300 K. Our findings unequivocally demonstrate that QI survives at room temperature, with thermal vibrations weakly restricting current flow along GNRs while completely blocking transport across GNRs. Our results thus pave the way towards the future realization of QI-engineered carbon nanocircuitry operating at room temperature, which is a fundamental step towards carbon-based nanoelectronics and quantum technologies. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Comments: 21 pages, 4 figures

Strong current in carbon nanoconductors: Mechanical and magnetic stability

Authors: Susanne Leitherer, Nick R. Papior, Mads Brandbyge

Abstract: Carbon nanoconductors are known to have extraordinary mechanical strength and interesting magnetic properties. Moreover, nanoconductors based on one- or two-dimensional carbon allotropes display a very high current-carrying capacity and ballistic transport. Here, we employ a recent, simple approach based on density functional theory to analyze the impact of strong current on the mechanical and mag… ▽ More Carbon nanoconductors are known to have extraordinary mechanical strength and interesting magnetic properties. Moreover, nanoconductors based on one- or two-dimensional carbon allotropes display a very high current-carrying capacity and ballistic transport. Here, we employ a recent, simple approach based on density functional theory to analyze the impact of strong current on the mechanical and magnetic properties of carbon nanoconductors. We find that the influence of the current itself on the bond-strength of carbon in general is remarkably low compared to e.g. typical metals. This is demonstrated for carbon chains, carbon nanotubes, graphene and polyacetylene. We can trace this to the strong binding and electronic bandstructure. On the other hand, we find that the current significanly change the magnetic properties. In particular, we find that currents in graphene zig-zag edge states quench the magnetism. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Comments: 7 pages, 5 figures

First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries

Authors: Aleksander Bach Lorentzen, Fei Gao, Peter Bøggild, Antti-Pekka Jauho, Mads Brandbyge

Abstract: Grain boundaries play a major role for electron transport in graphene sheets grown by chemical vapor deposition. Here we investigate the electronic structure and transport properties of idealized graphene grain boundaries (GBs) in bi-crystals using first principles density functional theory (DFT) and non-equilibrium Greens functions (NEGF). We generated 150 different grain boundaries using an auto… ▽ More Grain boundaries play a major role for electron transport in graphene sheets grown by chemical vapor deposition. Here we investigate the electronic structure and transport properties of idealized graphene grain boundaries (GBs) in bi-crystals using first principles density functional theory (DFT) and non-equilibrium Greens functions (NEGF). We generated 150 different grain boundaries using an automated workflow where their geometry is relaxed with DFT. We find that the GBs generally show a quasi-1D bandstructure along the GB. We group the GBs in four classes based on their conductive properties: transparent, opaque, insulating, and spin-polarizing and show how this is related to angular mismatch, quantum mechanical interference, and out-of-plane buckling. Especially, we find that spin-polarization in the GB correlates with out-of-plane buckling. We further investigate the characteristics of these classes in simulated scanning tunnelling spectroscopy and diffusive transport along the GB which demonstrate how current can be guided along the GB. △ Less

Submitted 12 January, 2024; originally announced January 2024.

Electron-vacancy scattering in SrNbO$_3$ and SrTiO$_3$: A DFT-NEGF study

Authors: Victor Rosendal, Nini Pryds, Dirch Hjorth Petersen, Mads Brandbyge

Abstract: Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically investigate the influence of O vacancies and also A and B-site vacancies, on the electronic transport as characterised by a scattering cross-section. We consider Sr… ▽ More Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically investigate the influence of O vacancies and also A and B-site vacancies, on the electronic transport as characterised by a scattering cross-section. We consider SrNbO$_3$ and n-type SrTiO$_3$ and contrast results for bulk and thin film (slab) geometries. By varying the electron do** in SrTiO$_3$ we get insight into how the electron-vacancy scattering vary for different experimental conditions. We observe a significant increase in the scattering cross-section (in units of square-lattice parameter, $a^2$) from ca. $0.5-2.5a^2$ per vacancy in SrNbO$_3$ and heavily doped SrTiO$_3$ to more than $9a^2$ in SrTiO$_3$ with 0.02 free carriers per unit cell. Furthermore, the scattering strength of O vacancies is enhanced in TiO$_2$ terminated surfaces by more than 6 times in lowly doped SrTiO$_3$ compared to other locations in slabs and bulk systems. Interestingly, we also find that Sr vacancies go from being negligible scattering centers in SrNbO$_3$ and heavily doped SrTiO$_3$, to having a large scattering cross-section in weakly doped SrTiO$_3$. We therefore conclude that the electron-vacancy scattering in these systems is sensitive to the combination of electron concentration and vacancy location. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Journal ref: Phys. Rev. B 109, 205129 (2024)

Tunable interfacial chemisorption with atomic-level precision in a graphene WSe2 heterostructure

Authors: Mo-Han Zhang, Fei Gao, Aleksander Bach Lorentzen, Ya-Ning Ren, Ruo-Han Zhang, Xiao-Feng Zhou, Rui Dong, Shi-Wu Gao, Mads Brandbyge, Lin He

Abstract: It has long been an ultimate goal to introduce chemical do** at the atomic level to precisely tune properties of materials. Two-dimensional materials have natural advantage because of its highly-exposed surface atoms, however, it is still a grand challenge to achieve this goal experimentally. Here, we demonstrate the ability to introduce chemical do** in graphene with atomic-level precision by… ▽ More It has long been an ultimate goal to introduce chemical do** at the atomic level to precisely tune properties of materials. Two-dimensional materials have natural advantage because of its highly-exposed surface atoms, however, it is still a grand challenge to achieve this goal experimentally. Here, we demonstrate the ability to introduce chemical do** in graphene with atomic-level precision by controlling chemical adsorption of individual Se atoms, which are extracted from the underneath WSe2, at the interface of graphene-WSe2 heterostructures. Our scanning tunneling microscopy (STM) measurements, combined with first-principles calculations, reveal that individual Se atoms can chemisorbed on three possible positions in graphene, which generate distinct pseudospin-mediated atomic-scale vortices in graphene. We demonstrate that the chemisorbed positions of individual Se atoms can be manipulated by STM tip, which enables us to achieve atomic-scale controlling quantum interference of the pseudospin-mediated vortices in graphene. This result offers the promise of controlling properties of materials through chemical do** with atomic-level precision. △ Less

Submitted 11 November, 2023; originally announced November 2023.

Provoking topology by octahedral tilting in strained SrNbO$_3$

Authors: Alla Chikina, Victor Rosendal, Hang Li, Eduardo B. Guedes, Marco Caputo, Nicholas Clark Plumb, Ming Shi, Dirch Hjorth Petersen, Mads Brandbyge, Walber Hugo Brito, Ekaterina Pomjakushina, Valerio Scagnoli, Jike Lyu, Marisa Medarde, Elizabeth Skoropata, Urs Staub, Shih-Wen Huang, Felix Baumberger, Nini Pryds, Milan Radovic

Abstract: Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattic… ▽ More Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Comments: 6 pages, 4 figures

Manipulation of magnetization and spin transport in hydrogenated graphene with THz pulses

Authors: Jakob Kjærulff Svaneborg, Aleksander Bach Lorentzen, Fei Gao, Antti-Pekka Jauho, Mads Brandbyge

Abstract: Terahertz (THz) field pulses can now be applied in Scanning Tunnelling Microscopy (THz-STM) junction experiments to study time resolved dynamics. The relatively slow pulse compared to the typical electronic time-scale calls for approximations based on a time-scale separation. Here, we contrast three methods based on non-equilibrium Green's functions (NEGF): (i) the steady-state, adiabatic results,… ▽ More Terahertz (THz) field pulses can now be applied in Scanning Tunnelling Microscopy (THz-STM) junction experiments to study time resolved dynamics. The relatively slow pulse compared to the typical electronic time-scale calls for approximations based on a time-scale separation. Here, we contrast three methods based on non-equilibrium Green's functions (NEGF): (i) the steady-state, adiabatic results, (ii) the lowest order dynamic expansion in the time-variation (DE), and (iii) the auxiliary mode (AM) propagation method without approximations in the time-variation. We consider a concrete THz-STM junction setup involving a hydrogen adsorbate on graphene where the localized spin polarization can be manipulated on/off by a local field from the tip electrode and/or a back-gate affecting the in-plane transport. We use steady-state NEGF combined with Density Functional Theory (DFT-NEGF) to obtain a Hubbard model for the study of the junction dynamics. Solving the Hubbard model in a mean-field approximation, we find that the near-adiabatic first order dynamical expansion provides a good description for STM voltage pulses up to the 1 V range. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: The Supplementary Material for this article can be found online at: https://www.frontiersin.org/articles/10.3389/fphy.2023.1237383/ full#supplementary-material

Octahedral distortions in SrNbO$_3$: Unraveling the structure-property relation

Authors: Victor Rosendal, Walber Hugo Brito, Milan Radovic, Alla Chikina, Mads Brandbyge, Nini Pryds, Dirch Hjorth Petersen

Abstract: Strontium niobate has triggered a lot of interest as a transparent conductor and as a possible realization of a correlated Dirac semi-metal. Using the lattice parameters as a tunable knob, the energy landscape of octahedral tilting was mapped using density functional theory calculations. We find that biaxial compressive strain induces tilting around the out-of-plane axis, while tensile strain indu… ▽ More Strontium niobate has triggered a lot of interest as a transparent conductor and as a possible realization of a correlated Dirac semi-metal. Using the lattice parameters as a tunable knob, the energy landscape of octahedral tilting was mapped using density functional theory calculations. We find that biaxial compressive strain induces tilting around the out-of-plane axis, while tensile strain induces tilting around the two in-plane axes. The two competing distorted structures for compressive strain show semi-Dirac dispersions above the Fermi level in their electronic structure. Our density functional theory calculations combined with dynamical mean field theory (DFT+DMFT) reveals that dynamical correlations downshift these semi-Dirac like cones towards the Fermi energy. More generally, our study reveals that the competition between the in-phase and out-of-phase tilting in SrNbO$_3$ provides a new degree of freedom which allows for tuning the thermoelectric and optical properties. We show how the tilt angle and mode is reflected in the behavior of the Seebeck coefficient and the plasma frequency, due to changes in the band structure. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Materials 7, 075002 (2023)

Mach--Zehnder-like interferometry with graphene nanoribbon networks

Authors: Sofia Sanz, Nick Papior, Géza Giedke, Daniel Sánchez-Portal, Mads Brandbyge, Thomas Frederiksen

Abstract: We study theoretically electron interference in a Mach--Zehnder-like geometry formed by four zigzag graphene nanoribbons (ZGNRs) arranged in parallel pairs, one on top of the other, such that they form intersection angles of 60$^\circ$. Depending on the interribbon separation, each intersection can be tuned to act either as an electron beam splitter or as a mirror, enabling tuneable circuitry with… ▽ More We study theoretically electron interference in a Mach--Zehnder-like geometry formed by four zigzag graphene nanoribbons (ZGNRs) arranged in parallel pairs, one on top of the other, such that they form intersection angles of 60$^\circ$. Depending on the interribbon separation, each intersection can be tuned to act either as an electron beam splitter or as a mirror, enabling tuneable circuitry with interfering pathways. Based on the mean-field Hubbard model and Green's function techniques, we evaluate the electron transport properties of such 8-terminal devices and identify pairs of terminals that are subject to self-interference. We further show that the scattering matrix formalism in the approximation of independent scattering at the four individual junctions provides accurate results as compared with the Green's function description, allowing for a simple interpretation of the interference process between two dominant pathways. This enables us to characterize the device sensitivity to phase shifts from an external magnetic flux according to the Aharonov--Bohm effect as well as from small geometric variations in the two path lengths. The proposed devices could find applications as magnetic field sensors and as detectors of phase shifts induced by local scatterers on the different segments, such as adsorbates, impurities or defects. The setup could also be used to create and study quantum entanglement. △ Less

Submitted 24 May, 2023; v1 submitted 9 February, 2023; originally announced February 2023.

Journal ref: J. Phys.: Condens. Matter 35, 374001 (2023)

Tunable spin and transport in porphyrin-graphene nanoribbon hybrids

Authors: Fei Gao, Rodrigo E. Menchón, Aran Garcia-Lekue, Mads Brandbyge

Abstract: Recently, porphyrin units have been attached to graphene nanoribbons (Por-GNR) enabling a multitude of possible structures. Here we report first principles calculations of two prototypical, experimentally feasible, Por-GNR hybrids, one of which displays a small band gap relevant for its use as electrode in a device. Embedding a Fe atom in the porphyrin causes spin polarization with a spin ground s… ▽ More Recently, porphyrin units have been attached to graphene nanoribbons (Por-GNR) enabling a multitude of possible structures. Here we report first principles calculations of two prototypical, experimentally feasible, Por-GNR hybrids, one of which displays a small band gap relevant for its use as electrode in a device. Embedding a Fe atom in the porphyrin causes spin polarization with a spin ground state $S=1$. We employ density functional theory and nonequilibrium Green's function transport calculations to examine a 2-terminal setup involving one Fe-Por-GNR between two metal-free, small band gap, Por-GNR electrodes. The coupling between the Fe-$d$ and GNR band states results in a Fano anti-resonance feature in the spin transport close to the Fermi energy. This feature makes transport highly sensitive to the Fe spin state. We demonstrate how mechanical strain or chemical adsorption on the Fe give rise to a spin-crossover to $S=1$ and $S=0$, respectively, directly reflected in a change in transport. Our theoretical results provide a clue for the on-surface synthesis of Por-GNRs hybrids, which can open a new avenue for carbon-based spintronics and chemical sensing. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Negative Differential Resistance in Spin-Crossover Molecular Devices

Authors: Dongzhe Li, Yongfeng Tong, Kaushik Bairagi, Massine Kelai, Yannick J. Dappe, Jérôme Lagoute, Yann Girard, Sylvie Rousset, Vincent Repain, Cyrille Barreteau, Mads Brandbyge, Alexander Smogunov, Amandine Bellec

Abstract: We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates… ▽ More We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with non-equilibrium Green's functions (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically-sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure. △ Less

Submitted 9 August, 2022; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: 4 figures

Journal ref: J. Phys. Chem. Lett. 13, 7514-7520 (2022)

Characterization and manipulation of intervalley scattering induced by an individual monovacancy in graphene

Authors: Yu Zhang, Fei Gao, Shiwu Gao, Mads Brandbyge, Lin He

Abstract: Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on nanometer length scales. Although central to our understanding of electronic properties of materials, direct characterization and manipulation of range and strength of the intervalley scattering induced by an individual atomic defect have so far been elusive. Using scanning tunneling micro… ▽ More Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on nanometer length scales. Although central to our understanding of electronic properties of materials, direct characterization and manipulation of range and strength of the intervalley scattering induced by an individual atomic defect have so far been elusive. Using scanning tunneling microscope, we visualized and controlled intervalley scattering from an individual monovacancy in graphene. By directly imaging the affected range of intervalley scattering of the monovacancy, we demonstrated that it is inversely proportional to the energy, i.e., it is proportional to the wavelength of massless Dirac Fermions. A giant electron-hole asymmetry of the intervalley scattering is observed because that the monovacancy is charged. By further charging the monovacancy, the bended electronic potential around the monovacancy softened the scattering potential, which, consequently, suppressed the intervalley scattering of the monovacancy. △ Less

Submitted 13 June, 2022; originally announced June 2022.

Comments: 18 pages, 4 figures

Proposal for all-electrical spin manipulation and detection for a single molecule on boron-substituted graphene

Authors: Fei Gao, Dongzhe Li, Cyrille Barreteau, Mads Brandbyge

Abstract: All-electrical writing and reading of spin states attract considerable attention for their promising applications in energy-efficient spintronics devices. Here we show, based on rigorous first-principles calculations, that the spin properties can be manipulated and detected in molecular spinterfaces, where an iron tetraphenyl porphyrin (FeTPP) molecule is deposited on boron-substituted graphene (B… ▽ More All-electrical writing and reading of spin states attract considerable attention for their promising applications in energy-efficient spintronics devices. Here we show, based on rigorous first-principles calculations, that the spin properties can be manipulated and detected in molecular spinterfaces, where an iron tetraphenyl porphyrin (FeTPP) molecule is deposited on boron-substituted graphene (B-G). Notably, a reversible spin switching between the $S=1$ and $S=3/2$ states is achieved by a gate electrode. We can trace the origin to a strong hybridization between the Fe-$d_{{z}^2}$ and B-$p_z$ orbitals. Combining density functional theory with nonequilibrium Green's function formalism, we propose an experimentally feasible 3-terminal setup to probe the spin state. Furthermore, we show how the in-plane quantum transport for the B-G, which is non-spin polarized, can be modified by FeTPP, yielding a significant transport spin polarization near the Fermi energy ($>10\%$ for typical coverage). Our work paves the way to realize all-electrical spintronics devices using molecular spinterfaces. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Comments: accepted in Physical Review Letters

Journal ref: Phys. Rev. Lett. 129, 027201 (2022)

Simple approach to current-induced effects -- bond weakening in metal chains

Authors: Nick Papior, Susanne Leitherer, Mads Brandbyge

Abstract: We present a simple, first principles scheme for calculating mechanical properties of nonequilibrium bulk systems assuming an ideal ballistic distribution function for the electronic states described by the external voltage bias. This allows for fast calculations of estimates of the current-induced stresses inside bulk systems carrying a ballistic current. The stress is calculated using the Hellma… ▽ More We present a simple, first principles scheme for calculating mechanical properties of nonequilibrium bulk systems assuming an ideal ballistic distribution function for the electronic states described by the external voltage bias. This allows for fast calculations of estimates of the current-induced stresses inside bulk systems carrying a ballistic current. The stress is calculated using the Hellmann-Feynman theorem, and is in agreement with the derivative of the nonequilibrium free energy. We illustrate the theory and present results for one-dimensional (1D) metal chains. We find that the susceptibility of the yield stress to the applied voltage agrees with the ordering of break voltages among the metals found in experiments. In particular, gold is seen to be the most stable under strong current, while aluminum is the least stable. △ Less

Submitted 4 February, 2022; originally announced February 2022.

Spin-polarizing electron beam splitter from crossed graphene nanoribbons

Authors: Sofia Sanz, Nick Papior, Géza Giedke, Daniel Sánchez-Portal, Mads Brandbyge, Thomas Frederiksen

Abstract: Junctions composed of two crossed graphene nanoribbons (GNRs) have been theoretically proposed as electron beam splitters where incoming electron waves in one GNR can be split coherently into propagating waves in \emph{two} outgoing terminals with nearly equal amplitude and zero back-scattering. Here we scrutinize this effect for devices composed of narrow zigzag GNRs taking explicitly into accoun… ▽ More Junctions composed of two crossed graphene nanoribbons (GNRs) have been theoretically proposed as electron beam splitters where incoming electron waves in one GNR can be split coherently into propagating waves in \emph{two} outgoing terminals with nearly equal amplitude and zero back-scattering. Here we scrutinize this effect for devices composed of narrow zigzag GNRs taking explicitly into account the role of Coulomb repulsion that leads to spin-polarized edge states within mean-field theory. We show that the beam-splitting effect survives the opening of the well-known correlation gap and, more strikingly, that a \emph{spin-dependent} scattering potential emerges which spin-polarizes the transmitted electrons in the two outputs. A near-perfect polarization can be achieved by joining several junctions in series. Our findings suggest that GNRs are interesting building blocks in spintronics and quantum technologies with applications for interferometry and entanglement. △ Less

Submitted 12 July, 2022; v1 submitted 18 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Lett. 129, 037701 (2022)

Current shot noise in atomic contacts: Fe and FeH$_2$ between Au electrodes

Authors: Michael Mohr, Alexander Weismann, Dongzhe Li, Mads Brandbyge, Richard Berndt

Abstract: Single Fe atoms on Au(111) surfaces were hydrogenated and dehydrogenated with the Au tip of a low-temperature scanning tunneling microscope (STM). Fe and FeH$_2$ were contacted with the tip of the microscope and show distinctly different evolutions of the conductance with the tip-substrate distance. The current shot noise of these contacts has been measured and indicates a single relevant conducta… ▽ More Single Fe atoms on Au(111) surfaces were hydrogenated and dehydrogenated with the Au tip of a low-temperature scanning tunneling microscope (STM). Fe and FeH$_2$ were contacted with the tip of the microscope and show distinctly different evolutions of the conductance with the tip-substrate distance. The current shot noise of these contacts has been measured and indicates a single relevant conductance channel with the spin-polarized transmission. For FeH$_2$ the spin polarization reaches values up to 80\% for low conductances and is reduced if the tip-surface distance is decreased. These observations are partially reproduced using density functional theory (DFT) based transport calculations. We suggest that the quantum motion of the hydrogen atoms, which is not taken into account in our DFT modeling, may have a significant effect on the results. △ Less

Submitted 18 October, 2021; originally announced October 2021.

Comments: 10 pages

Journal ref: Phys. Rev. B 104, 115431 (2021)

Electric-field control of a single-atom polar bond

Authors: M. Omidian, S. Leitherer, N. Neel, M. Brandbyge, J. Kröger

Abstract: The polar covalent bond between a single Au atom terminating the apex of an atomic force microscope tip and a C atom of graphene on SiC(0001) is exposed to an external electric field. For one field orientation the Au-C bond is strong enough to sustain the mechanical load of partially detached graphene, whilst for the opposite orientation the bond breaks easily. Calculations based on density functi… ▽ More The polar covalent bond between a single Au atom terminating the apex of an atomic force microscope tip and a C atom of graphene on SiC(0001) is exposed to an external electric field. For one field orientation the Au-C bond is strong enough to sustain the mechanical load of partially detached graphene, whilst for the opposite orientation the bond breaks easily. Calculations based on density functional theory and nonequilibrium Green's function methods support the experimental observations by unveiling bond forces that reflect the polar character of the bond. Field-induced charge transfer between the atomic orbitals modifies the polarity of the different electronegative reaction partners and the Au-C bond strength. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Surface states and related quantum interference in \textit{ab initio} electron transport

Authors: Dongzhe Li, Jonas L. Bertelsen, Nick Papior, Alexander Smogunov, Mads Brandbyge

Abstract: Shockley surface states (SS) have attracted much attention due to their role in various physical phenomena occurring at surfaces. It is also clear from experiments that they can play an important role in electron transport. However, accurate incorporation of surface states in $\textit{ab initio}$ quantum transport simulations remains still an unresolved problem. Here we go beyond the state-of-the-… ▽ More Shockley surface states (SS) have attracted much attention due to their role in various physical phenomena occurring at surfaces. It is also clear from experiments that they can play an important role in electron transport. However, accurate incorporation of surface states in $\textit{ab initio}$ quantum transport simulations remains still an unresolved problem. Here we go beyond the state-of-the-art non-equilibrium Green's function formalism through the evaluation of the self-energy in real-space, enabling electron transport without using artificial periodic in-plane conditions. We demonstrate the method on three representative examples based on Au(111): a clean surface, a metallic nanocontact, and a single-molecule junction. We show that SS can contribute more than 30\% of the electron transport near the Fermi energy. A significant and robust transmission drop is observed at the SS band edge due to quantum interference in both metallic and molecular junctions, in good agreement with experimental measurements. The origin of this interference phenomenon is attributed to the coupling between bulk and SS transport channels and it is reproduced and understood by tight-binding model. Furthermore, our method predicts much better quantized conductance for metallic nanocontacts. △ Less

Submitted 3 July, 2021; v1 submitted 20 March, 2021; originally announced March 2021.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. Research 3, 033017 (2021)

SIESTA: recent developments and applications

Authors: Alberto García, Nick Papior, Arsalan Akhtar, Emilio Artacho, Volker Blum, Emanuele Bosoni, Pedro Brandimarte, Mads Brandbyge, J. I. Cerdá, Fabiano Corsetti, Ramón Cuadrado, Vladimir Dikan, Jaime Ferrer, Julian Gale, Pablo García-Fernández, V. M. García-Suárez, Sandra García, Georg Huhs, Sergio Illera, Richard Korytár, Peter Koval, Irina Lebedeva, Lin Lin, Pablo López-Tarifa, Sara G. Mayo , et al. (11 additional authors not shown)

Abstract: A review of the present status, recent enhancements, and applicability of the SIESTA program is presented. Since its debut in the mid-nineties, SIESTA's flexibility, efficiency and free distribution has given advanced materials simulation capabilities to many groups worldwide. The core methodological scheme of SIESTA combines finite-support pseudo-atomic orbitals as basis sets, norm-conserving pse… ▽ More A review of the present status, recent enhancements, and applicability of the SIESTA program is presented. Since its debut in the mid-nineties, SIESTA's flexibility, efficiency and free distribution has given advanced materials simulation capabilities to many groups worldwide. The core methodological scheme of SIESTA combines finite-support pseudo-atomic orbitals as basis sets, norm-conserving pseudopotentials, and a real-space grid for the representation of charge density and potentials and the computation of their associated matrix elements. Here we describe the more recent implementations on top of that core scheme, which include: full spin-orbit interaction, non-repeated and multiple-contact ballistic electron transport, DFT+U and hybrid functionals, time-dependent DFT, novel reduced-scaling solvers, density-functional perturbation theory, efficient Van der Waals non-local density functionals, and enhanced molecular-dynamics options. In addition, a substantial effort has been made in enhancing interoperability and interfacing with other codes and utilities, such as Wannier90 and the second-principles modelling it can be used for, an AiiDA plugin for workflow automatization, interface to Lua for steering SIESTA runs, and various postprocessing utilities. SIESTA has also been engaged in the Electronic Structure Library effort from its inception, which has allowed the sharing of various low level libraries, as well as data standards and support for them, in particular the PSML definition and library for transferable pseudopotentials, and the interface to the ELSI library of solvers. Code sharing is made easier by the new open-source licensing model of the program. This review also presents examples of application of the capabilities of the code, as well as a view of on-going and future developments. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 29 pages, 23 figures

Journal ref: J. Chem. Phys. 152, 204108 (2020)

Ab initio current-induced molecular dynamics

Authors: **g-Tao Lu, Susanne Leitherer, Nick R. Papior, Mads Brandbyge

Abstract: We extend the ab initio molecular dynamics (AIMD) method based on density functional theory to the nonequilibrium situation where an electronic current is present in the electronic system. The dynamics is treated using the semi-classical generalized Langevin equation. We demonstrate how the full anharmonic description of the inter-atomic forces is important in order to understand the current-induc… ▽ More We extend the ab initio molecular dynamics (AIMD) method based on density functional theory to the nonequilibrium situation where an electronic current is present in the electronic system. The dynamics is treated using the semi-classical generalized Langevin equation. We demonstrate how the full anharmonic description of the inter-atomic forces is important in order to understand the current-induced heating and the energy distribution both in frequency and in real space. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 201406 (2020)

Quantum interference engineering of nanoporous graphene for carbon nanocircuitry

Authors: Gaetano Calogero, Isaac Alcón, Nick Papior, Antti-Pekka Jauho, Mads Brandbyge

Abstract: Bottom-up prepared carbon nanostructures appear as promising platforms for future carbon-based nanoelectronics, due to their atomically precise and versatile structure. An important breakthrough is the recent preparation of nanoporous graphene (NPG) as an ordered covalent array of graphene nanoribbons (GNRs). Within NPG, the GNRs may be thought of as 1D electronic nanochannels through which electr… ▽ More Bottom-up prepared carbon nanostructures appear as promising platforms for future carbon-based nanoelectronics, due to their atomically precise and versatile structure. An important breakthrough is the recent preparation of nanoporous graphene (NPG) as an ordered covalent array of graphene nanoribbons (GNRs). Within NPG, the GNRs may be thought of as 1D electronic nanochannels through which electrons preferentially move, highlighting NPG's potential for carbon nanocircuitry. However, the π-conjugated bonds bridging the GNRs give rise to electronic cross-talk between the individual 1D channels, leading to spatially dispersing electronic currents. Here, we propose a chemical design of the bridges resulting in destructive quantum interference, which blocks the cross-talk between GNRs in NPG, electronically isolating them. Our multiscale calculations reveal that injected currents can remain confined within a single, 0.7 nm wide, GNR channel for distances as long as 100 nm. The concepts developed in this work thus provide an important ingredient for the quantum design of future carbon nanocircuitry. △ Less

Submitted 11 August, 2019; originally announced August 2019.

Journal ref: Journal of the American Chemical Society, 2019

Removing all periodic boundary conditions: Efficient non-equilibrium Green function calculations

Authors: Nick Papior, Gaetano Calogero, Susanne Leitherer, Mads Brandbyge

Abstract: We describe a method and its implementation for calculating electronic structure and electron transport without approximating the structure using periodic super-cells. This effectively removes spurious periodic images and interference effects. Our method is based on already established methods readily available in the non-equilibrium Green function formalism and allows for non-equilibrium transpor… ▽ More We describe a method and its implementation for calculating electronic structure and electron transport without approximating the structure using periodic super-cells. This effectively removes spurious periodic images and interference effects. Our method is based on already established methods readily available in the non-equilibrium Green function formalism and allows for non-equilibrium transport. We present examples of a N defect in graphene, finite voltage bias transport in a point-contact to graphene, and a graphene-nanoribbon junction. This method is less costly, in terms of CPU-hours, than the super-cell approximation. △ Less

Submitted 27 August, 2019; v1 submitted 27 May, 2019; originally announced May 2019.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 100, 195417 (2019)

QuantumATK: An integrated platform of electronic and atomic-scale modelling tools

Authors: Søren Smidstrup, Troels Markussen, Pieter Vancraeyveld, Jess Wellendorff, Julian Schneider, Tue Gunst, Brecht Verstichel, Daniele Stradi, Petr A. Khomyakov, Ulrik G. Vej-Hansen, Maeng-Eun Lee, Samuel T. Chill, Filip Rasmussen, Gabriele Penazzi, Fabiano Corsetti, Ari Ojanperä, Kristian Jensen, Mattias L. N. Palsgaard, Umberto Martinez, Anders Blom, Mads Brandbyge, Kurt Stokbro

Abstract: QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously presented, the purpose of this paper is to give a general overview of the platform. The QuantumATK simulation engines enable electronic-structure calcul… ▽ More QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously presented, the purpose of this paper is to give a general overview of the platform. The QuantumATK simulation engines enable electronic-structure calculations using density functional theory or tight-binding model Hamiltonians, and also offers bonded or reactive empirical force fields in many different parametrizations. Density functional theory is implemented using either a plane-wave basis or expansion of electronic states in a linear combination of atomic orbitals. The platform includes a long list of advanced modules, including Green's-function methods for electron transport simulations and surface calculations, first-principles electron-phonon and electron-photon couplings, simulation of atomic-scale heat transport, ion dynamics, spintronics, optical properties of materials, static polarization, and more. Seamless integration of the different simulation engines into a common platform allows for easy combination of different simulation methods into complex workflows. Besides giving a general overview and presenting a number of implementation details not previously published, we also present four different application examples. These are calculations of the phonon-limited mobility of Cu, Ag and Au, electron transport in a gated 2D device, multi-model simulation of lithium ion drift through a battery cathode in an external electric field, and electronic-structure calculations of the composition-dependent band gap of SiGe alloys. △ Less

Submitted 21 August, 2019; v1 submitted 7 May, 2019; originally announced May 2019.

Comments: Submitted to Journal of Physics: Condensed Matter

Journal ref: Søren Smidstrup et. al. 2020 J. Phys.: Condens. Matter 32 015901

Current-induced atomic forces in gated graphene nanoconstrictions

Authors: Susanne Leitherer, Nick Papior, Mads Brandbyge

Abstract: Electronic current densities can reach extreme values in highly conducting nanostructures where constrictions limit current. For bias voltages on the 1 volt scale, the highly non-equilibrium situation can influence the electronic density between atoms, leading to significant inter-atomic forces. An easy interpretation of the non-equilibrium forces is currently not available. In this work, we prese… ▽ More Electronic current densities can reach extreme values in highly conducting nanostructures where constrictions limit current. For bias voltages on the 1 volt scale, the highly non-equilibrium situation can influence the electronic density between atoms, leading to significant inter-atomic forces. An easy interpretation of the non-equilibrium forces is currently not available. In this work, we present an ab-initio study based on density functional theory of bias-induced atomic forces in gated graphene nanoconstrictions consisting of junctions between graphene electrodes and graphene nano-ribbons in the presence of current. We find that current-induced bond-forces and bond-charges are correlated, while bond-forces are not simply correlated to bond-currents. We discuss, in particular, how the forces are related to induced charges and the electrostatic potential profile (voltage drop) across the junctions. For long current-carrying junctions we may separate the junction into a part with a voltage drop, and a part without voltage drop. The latter situation can be compared to a nano-ribbon in the presence of current using an ideal ballistic velocity-dependent occupation function. This shows how the combination of voltage drop and current give rise to the strongest current-induced forces in nanostructures. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 100, 035415 (2019)

Multi-scale approach to first-principles electron transport beyond 100 nm

Authors: Gaetano Calogero, Nick R. Papior, Mohammad Koleini, Matthew Helmi Leth Larsen, Mads Brandbyge

Abstract: Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables… ▽ More Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables calculations of electronic currents in two-dimensional devices larger than 100 nm$^2$, where multiple perturbed regions described by density functional theory (DFT) are embedded into an extended unperturbed region described by a DFT-parametrized tight-binding model. We explain the details of the method, provide examples, and point out the main challenges regarding its practical implementation. Finally we apply it to study current propagation in pristine, defected and nanoporous graphene devices, injected by chemically accurate contacts simulating scanning tunneling microscopy probes. △ Less

Submitted 3 April, 2019; v1 submitted 19 December, 2018; originally announced December 2018.

Journal ref: Nanoscale, 2019,11, 6153-6164

Full-scale Simulation of Electron Transport in Nanoporous Graphene: Probing the Talbot Effect

Authors: Gaetano Calogero, Nick R. Papior, Bernhard Kretz, Aran Garcia-Lekue, Thomas Frederiksen, Mads Brandbyge

Abstract: Designing platforms to control phase-coherence and interference of electron waves is a cornerstone for future quantum electronics, computing or sensing. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly [Moreno et al., Science 360, 199 (2018)] opening an avenue for controlling the electronic current in… ▽ More Designing platforms to control phase-coherence and interference of electron waves is a cornerstone for future quantum electronics, computing or sensing. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly [Moreno et al., Science 360, 199 (2018)] opening an avenue for controlling the electronic current in a two-dimensional material. By simulating electron transport in real-sized NPG samples we predict that electron waves injected from the tip of a scanning tunneling microscope (STM) behave similarly to photons in coupled waveguides, displaying a Talbot interference pattern. We link the origins of this effect to the band structure of the NPG and further demonstrate how this pattern may be mapped out by a second STM probe. We enable atomistic parameter-free calculations beyond the 100 nm scale by develo** a new multi-scale method where first-principles density functional theory regions are seamlessly embedded into a large-scale tight-binding. △ Less

Submitted 19 November, 2018; originally announced November 2018.

Comments: 11 pages, 10 figures, Supporting Information included

Journal ref: Nano Lett. 19, 576-581 (2019)

Understanding and engineering phonon-mediated tunneling into graphene on metal surfaces

Authors: J. Halle, N. Néel, M. Fonin, M. Brandbyge, J. Kröger

Abstract: Metal-intercalated graphene on Ir(111) exhibits phonon signatures in inelastic elec- tron tunneling spectroscopy with strengths that depend on the intercalant. Extraor- dinarily strong graphene phonon signals are observed for Cs intercalation. Li interca- lation likewise induces clearly discriminable phonon signatures, albeit less pronounced than observed for Cs. The signal can be finely tuned by… ▽ More Metal-intercalated graphene on Ir(111) exhibits phonon signatures in inelastic elec- tron tunneling spectroscopy with strengths that depend on the intercalant. Extraor- dinarily strong graphene phonon signals are observed for Cs intercalation. Li interca- lation likewise induces clearly discriminable phonon signatures, albeit less pronounced than observed for Cs. The signal can be finely tuned by the alkali metal coverage and gradually disappears upon increasing the junction conductance from tunneling to con- tact ranges. In contrast to Cs and Li, for Ni-intercalated graphene the phonon signals stay below the detection limit in all transport ranges. Going beyond the conventional two-terminal approach, transport calculations provide a comprehensive understanding of the subtle interplay between the graphene{electrode coupling and the observation of graphene phonon spectroscopic signatures. △ Less

Submitted 29 October, 2018; originally announced October 2018.

Journal ref: Nano Lett. 18, 5697 (2018)

Large-scale tight-binding simulations of quantum transport in ballistic graphene

Authors: Gaetano Calogero, Nick R. Papior, Peter Bøggild, Mads Brandbyge

Abstract: Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the standard principles of optics is rapidly evolving, calling for a deeper understanding of transport in large-scale devices at a quantum level. Here we perform large-sc… ▽ More Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the standard principles of optics is rapidly evolving, calling for a deeper understanding of transport in large-scale devices at a quantum level. Here we perform large-scale quantum transport calculations based on a tight-binding model of graphene and the non-equilibrium Green's function method and include the effects of $p-n$ junctions of different shape, magnetic field, and absorptive regions acting as drains for current. We stress the importance of choosing absorbing boundary conditions in the calculations to correctly capture how current flows in the limit of infinite devices. As a specific application we present a fully quantum-mechanical framework for the "2D Dirac fermion microscope" recently proposed by Bøggild $et\, al.$ [Nat. Comm. 8, 10.1038 (2017)], tackling several key electron-optical effects therein predicted via semiclassical trajectory simulations, such as electron beam collimation, deflection and scattering off Veselago dots. Our results confirm that a semiclassical approach to a large extend is sufficient to capture the main transport features in the mesoscopic limit and the optical regime, but also that a richer electron-optical landscape is to be expected when coherence or other purely quantum effects are accounted for in the simulations. △ Less

Submitted 21 August, 2018; v1 submitted 25 May, 2018; originally announced May 2018.

Comments: 12 pages, 10 figures

Directed Growth of Hydrogen Lines on Graphene: High Throughput Simulations Powered by Evolutionary Algorithm

Authors: G. Ozbal, J. T. Falkenberg, M. Brandbyge, R. T. Senger, H. Sevincli

Abstract: We set up an evolutionary algorithm combined with density functional tight-binding (DFTB) calculations to investigate hydrogen adsorption on flat graphene and graphene monolayers curved over substrate steps. During the evolution, candidates for the new generations are created by adsorption of an additional hydrogen atom to the stable configurations of the previous generation, where a mutation mech… ▽ More We set up an evolutionary algorithm combined with density functional tight-binding (DFTB) calculations to investigate hydrogen adsorption on flat graphene and graphene monolayers curved over substrate steps. During the evolution, candidates for the new generations are created by adsorption of an additional hydrogen atom to the stable configurations of the previous generation, where a mutation mechanism is also incorporated. Afterwards a two-stage selection procedure is employed. Selected candidates act as the parents of the next generation. In curved graphene, the evolution follows a similar path except for a new mechanism, which aligns hydrogen atoms on the line of minimum curvature. The mechanism is due to the increased chemical reactivity of graphene along the minimum radius of curvature line (MRCL) and to sp$^3$ bond angles being commensurate with the kinked geometry of hydrogenated graphene at the substrate edge. As a result, the reaction barrier is reduced considerably along the MRCL, and hydrogenation continues like a mechanical chain reaction. This growth mechanism enables lines of hydrogen atoms along the MRCL, which has the potential to overcome substrate or rippling effects and could make it possible to define edges or nanoribbons without actually cutting the material. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Comments: 10 pages of main text, 37 pages of supplementary information, 1 supplementary video

Journal ref: Phys. Rev. Materials 2, 073406 (2018)

Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene

Authors: Jose E. Barrios Vargas, Jesper T. Falkenberg, David Soriano, Aron W. Cummings, Mads Brandbyge, Stephan Roche

Abstract: Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. Meanwhile, graphene grown by chemical vapor deposition is the most suitable for large-scale production, but the resulting material t… ▽ More Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. Meanwhile, graphene grown by chemical vapor deposition is the most suitable for large-scale production, but the resulting material tends to be polycrystalline. Up to now there has been relatively little focus on how chemical functionalization, and hydrogenation in particular, impacts the properties of polycrystalline graphene. In this work, we use numerical simulations to study the electrical properties of hydrogenated polycrystalline graphene. We find a strong correlation between the spatial distribution of the hydrogen adsorbates and the charge transport properties. Charge transport is weakly sensitive to hydrogenation when adsorbates are confined to the grain boundaries, while a uniform distribution of hydrogen degrades the electronic mobility. This difference stems from the formation of the hydrogen-induced resonant impurity states, which are inhibited when the honeycomb symmetry is locally broken by the grain boundaries. These findings suggest a tunability of electrical transport of polycrystalline graphene through selective hydrogen functionalization, and also have implications for hydrogen-induced magnetization and spin lifetime of this material. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Simple and efficient LCAO basis sets for the diffuse states in carbon nanostructures

Authors: Nick R. Papior, Gaetano Calogero, Mads Brandbyge

Abstract: We present a simple way to describe the lowest unoccupied diffuse states in carbon nanostructures in density functional theory (DFT) calculations using a minimal LCAO (linear combination of atomic orbitals) basis set. By comparing plane wave basis calculations, we show how these states can be captured by adding long-range orbitals to the standard LCAO basis sets for the extreme cases of planar <it… ▽ More We present a simple way to describe the lowest unoccupied diffuse states in carbon nanostructures in density functional theory (DFT) calculations using a minimal LCAO (linear combination of atomic orbitals) basis set. By comparing plane wave basis calculations, we show how these states can be captured by adding long-range orbitals to the standard LCAO basis sets for the extreme cases of planar <it>sp2</it> (graphene) and curved carbon (C60). In particular, using Bessel functions with a long range as additional basis functions retain a minimal basis size. This provides a smaller and simpler atom-centered basis set compared to the standard pseudo-atomic orbitals (PAOs) with multiple polarization orbitals or by adding non-atom-centered states to the basis. △ Less

Submitted 16 May, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 3 pages, 3 figures

Efficient first-principles calculation of phonon assisted photocurrent in large-scale solar cell devices

Authors: Mattias Palsgaard, Troels Markussen, Tue Gunst, Mads Brandbyge, Kurt Stokbro

Abstract: We present a straightforward and computationally cheap method to obtain the phonon-assisted photocurrent in large-scale devices from first-principles transport calculations. The photocurrent is calculated using nonequilibrium Green's function with light-matter interaction from the first-order Born approximation while electron-phonon coupling (EPC) is included through special thermal displacements… ▽ More We present a straightforward and computationally cheap method to obtain the phonon-assisted photocurrent in large-scale devices from first-principles transport calculations. The photocurrent is calculated using nonequilibrium Green's function with light-matter interaction from the first-order Born approximation while electron-phonon coupling (EPC) is included through special thermal displacements (STD). We apply the method to a silicon solar cell device and demonstrate the impact of including EPC in order to properly describe the current due to the indirect band-to-band transitions. The first-principles results are successfully compared to experimental measurements of the temperature and light intensity dependence of the open-circuit voltage of a silicon photovoltaic module. Our calculations illustrate the pivotal role played by EPC in photocurrent modelling to avoid underestimation of the open-circuit voltage, short-circuit current and maximum power. This work represents a recipe for computational characterization of future photovoltaic devices including the combined effects of light-matter interaction, phonon-assisted tunneling and the device potential at finite bias from the level of first-principles simulations. △ Less

Submitted 11 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Applied 10, 014026 (2018)

Semi-classical generalized Langevin equation for equilibrium and nonequilibrium molecular dynamics simulation

Authors: **g-Tao Lü, Bing-Zhong Hu, Per Hedegård, Mads Brandbyge

Abstract: Molecular dynamics (MD) simulation based on Langevin equation has been widely used in the study of structural, thermal properties of matters in difference phases. Normally, the atomic dynamics are described by classical equations of motion and the effect of the environment is taken into account through the fluctuating and frictional forces. Generally, the nuclear quantum effects and their coupling… ▽ More Molecular dynamics (MD) simulation based on Langevin equation has been widely used in the study of structural, thermal properties of matters in difference phases. Normally, the atomic dynamics are described by classical equations of motion and the effect of the environment is taken into account through the fluctuating and frictional forces. Generally, the nuclear quantum effects and their coupling to other degrees of freedom are difficult to include in an efficient way. This could be a serious limitation on its application to the study of dynamical properties of materials made from light elements, in the presence of external driving electrical or thermal fields. One example of such system is single molecular dynamics on metal surface, an important system that has received intense study in surface science. In this review, we summarize recent effort in extending the Langevin MD to include nuclear quantum effect and their coupling to flowing electrical current. We discuss its applications in the study of adsorbate dynamics on metal surface, current-induced dynamics in molecular junctions, and quantum thermal transport between different reservoirs. △ Less

Submitted 3 February, 2018; v1 submitted 11 December, 2017; originally announced December 2017.

Comments: 23 pages, 16 figure

First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost

Authors: Tue Gunst, Troels Markussen, Mattias L. N. Palsgaard, Kurt Stokbro, Mads Brandbyge

Abstract: Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special thermal displacement" (STD) of the atomic coordinates at almost the same cost as elastic transport calculations. We apply the method to ultra-scaled silicon devic… ▽ More Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special thermal displacement" (STD) of the atomic coordinates at almost the same cost as elastic transport calculations. We apply the method to ultra-scaled silicon devices and demonstrate the importance of phonon-assisted band-to-band and source-to-drain tunneling. In a diode the phonons lead to a rectification ratio suppression in good agreement with experiments, while in an ultra-thin body transistor the phonons increase off-currents by four orders of magnitude, and the subthreshold swing by a factor of four, in agreement with perturbation theory. △ Less

Submitted 18 October, 2017; v1 submitted 28 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 161404 (2017)

A Two-dimensional Dirac fermion microscope

Authors: Peter Bøggild, Jose M. Caridad, Christoph Stampfer, Gaetano Galogero, Nick Papior, Mads Brandbyge

Abstract: The electron microscope has been a powerful, highly versatile workhorse in the fields of material and surface science, micro and nanotechnology, biology and geology, for nearly 80 years. The advent of two-dimensional materials opens new possibilities for realising an analogy to electron microscopy in the solid state. Here we provide a perspective view on how a two-dimensional (2D) Dirac fermion-ba… ▽ More The electron microscope has been a powerful, highly versatile workhorse in the fields of material and surface science, micro and nanotechnology, biology and geology, for nearly 80 years. The advent of two-dimensional materials opens new possibilities for realising an analogy to electron microscopy in the solid state. Here we provide a perspective view on how a two-dimensional (2D) Dirac fermion-based microscope can be realistically implemented and operated, using graphene as a vacuum chamber for ballistic electrons. We use semiclassical simulations to propose concrete architectures and design rules of 2D electron guns, deflectors, tunable lenses and various detectors. The simulations show how simple objects can be imaged with well-controlled and collimated in-plane beams consisting of relativistic charge carriers. Finally, we discuss the potential of such microscopes for investigating edges, terminations and defects, as well as interfaces, including external nanoscale structures such as adsorbed molecules, nanoparticles or quantum dots. △ Less

Submitted 23 April, 2017; originally announced April 2017.

Comments: 34 pages; 14 pages; 6 figures; Supplementary information

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

Authors: Andrea Crovetto, Mattias Palsgaard, Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge, Ole Hansen

Abstract: We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calcu… ▽ More We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu$_2$ZnSnS$_4$ surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit voltage measurements on Cu$_2$ZnSnS$_4$ solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu$_2$ZnSnS$_4$ solar cells. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Comments: Accepted at Applied Physics Letters

Strong paramagnon scattering in single atom Pd contacts

Authors: V. Schendel, C. Barreteau, M. Brandbyge, B. Borca, I. Pentegov, U. Schlickum, M. Ternes, P. Wahl, K. Kern

Abstract: Among all transition metals, Palladium (Pd) has the highest density of states at the Fermi energy yet does not fulfill the Stoner criterion for ferromagnetism. However, its close vicinity to magnetism renders it a nearly ferromagnetic metal, which hosts paramagnons, strongly damped spin fluctuations. In this letter we compare the total and the differential conductance of mono-atomic Pd and Cobalt… ▽ More Among all transition metals, Palladium (Pd) has the highest density of states at the Fermi energy yet does not fulfill the Stoner criterion for ferromagnetism. However, its close vicinity to magnetism renders it a nearly ferromagnetic metal, which hosts paramagnons, strongly damped spin fluctuations. In this letter we compare the total and the differential conductance of mono-atomic Pd and Cobalt (Co) contacts between Pd electrodes. Transport measurements reveal a conductance for Co of 1 $G_0$ , while for Pd we obtain 2 $G_0$. The differential conductance of mono-atomic Pd contacts shows a drop with increasing bias, which gives rise to a peculiar {$Λ$}-shaped spectrum. Supported by theoretical calculations we correlate this finding with the life time of hot quasi-particles in Pd which is strongly influenced by paramagnon scattering. In contrast to this, Co adatoms locally induce magnetic order and transport through single cobalt atoms remains unaffected by paramagnon scattering, consistent with theory. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 96, 035155 (2017)

Electron-phonon scattering from Green's function transport combined with Molecular Dynamics: Applications to mobility predictions

Authors: Troels Markussen, Mattias Palsgaard, Daniele Stradi, Tue Gunst, Mads Brandbyge, Kurt Stokbro

Abstract: We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent transmission from which we evaluate the mobility. We validate our approach by comparing to mobilities and conductivies obtained by the Boltzmann transport equation (BT… ▽ More We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent transmission from which we evaluate the mobility. We validate our approach by comparing to mobilities and conductivies obtained by the Boltzmann transport equation (BTE) for different bulk and one-dimensional systems. For bulk silicon and gold we successfully compare against experimental values. We discuss limitations and advantages of each of the computational approaches. △ Less

Submitted 11 January, 2017; originally announced January 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 95, 245210 (2017)

Flexural phonon scattering induced by electrostatic gating in graphene

Authors: Tue Gunst, Kristen Kaasbjerg, Mads Brandbyge

Abstract: Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometri… ▽ More Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory (DFT) and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and furthermore suggest a direct relation between device symmetry and resulting mobility. △ Less

Submitted 4 January, 2017; v1 submitted 19 September, 2016; originally announced September 2016.

Comments: Accepted at Physical Review Letters

Journal ref: Phys. Rev. Lett. 118, 046601 (2017)

Field effect in stacked van der Waals heterostructures: Stacking sequence matters

Authors: Daniele Stradi, Nick R. Papior, Mads Brandbyge

Abstract: Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We ca… ▽ More Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establish an important design rule for devices based on 2D atomic crystals. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Graphene Nanobubbles as Valley Filters and Beamsplitters

Authors: Mikkel Settnes, Stephen R. Power, Mads Brandbyge, Antti-Pekka Jauho

Abstract: The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley po… ▽ More The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley polarized currents. Here we suggest a way to obtain valley polarization using strain-induced inhomogeneous pseudomagnetic fields (PMF) which act differently on the two valleys. Notably, the suggested method does not involve external magnetic fields, or magnetic materials, as previous proposals. In our proposal the strain is due to experimentally feasible nanobubbles (but any local deformation would do): the associated PMFs lead to different real space trajectories for K and K' electrons, thus allowing the two valleys to be addressed individually. In this way, graphene nanobubbles can be exploited in both valley filtering and valley splitting devices, and our simulations reveal that a number of different functionalities are possible depending on the deformation field. △ Less

Submitted 10 January, 2017; v1 submitted 16 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Lett. 117, 276801 (2016)

Localized electronic states at grain boundaries on the surface of graphene and graphite

Authors: Adina Luican-Mayer, Jose E. Barrios-Vargas, Jesper Toft Falkenberg, Gabriel Autès, Aron W. Cummings, David Soriano, Guohong Li, Mads Brandbyge, Oleg V. Yazyev, Stephan Roche, Eva Y. Andrei

Abstract: Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexib… ▽ More Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Improvements on non-equilibrium and transport Green function techniques: the next-generation transiesta

Authors: Nick Papior, Nicolás Lorente, Thomas Frederiksen, Alberto García, Mads Brandbyge

Abstract: We present novel methods implemented within the non-equilibrium Green function code (NEGF) transiesta based on density functional theory (DFT). Our flexible, next-generation DFT-NEGF code handles devices with one or multiple electrodes ($N_e\ge1$) with individual chemical potentials and electronic temperatures. We describe its novel methods for electrostatic gating, contour opti- mizations, and as… ▽ More We present novel methods implemented within the non-equilibrium Green function code (NEGF) transiesta based on density functional theory (DFT). Our flexible, next-generation DFT-NEGF code handles devices with one or multiple electrodes ($N_e\ge1$) with individual chemical potentials and electronic temperatures. We describe its novel methods for electrostatic gating, contour opti- mizations, and assertion of charge conservation, as well as the newly implemented algorithms for optimized and scalable matrix inversion, performance-critical pivoting, and hybrid parallellization. Additionally, a generic NEGF post-processing code (tbtrans/phtrans) for electron and phonon transport is presented with several novelties such as Hamiltonian interpolations, $N_e\ge1$ electrode capability, bond-currents, generalized interface for user-defined tight-binding transport, transmission projection using eigenstates of a projected Hamiltonian, and fast inversion algorithms for large-scale simulations easily exceeding $10^6$ atoms on workstation computers. The new features of both codes are demonstrated and bench-marked for relevant test systems. △ Less

Submitted 15 July, 2016; originally announced July 2016.

Comments: 24 pages, 19 figures

Journal ref: Comput. Phys. Commun. 212, 8-24 (2017)

Inelastic vibrational signals in electron transport across graphene nanoconstrictions

Authors: Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge

Abstract: We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based o… ▽ More We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based on a novel first-principles method which includes the phonon broadening due to coupling with phonons in the electrodes. We find that the signals are modified due to the strong coupling to the electrodes, however, still remain as robust fingerprints of the vibrations in the nanoconstriction. We investigate the effect of including the full self-consistent potential drop due to finite bias and gate do** on the calculations and find this to be of minor importance. △ Less

Submitted 10 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. B 93, 245415 (2016)

All-graphene edge contacts: Electrical resistance of graphene T-junctions

Authors: Kåre Wedel Jacobsen, Jesper Toft Falkenberg, Nick Papior, Peter Bøggild, Antti-Pekka Jauho, Mads Brandbyge

Abstract: Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determin… ▽ More Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determine the transmission spectrum and contact resistance of the system. We find that the most symmetric structures have a significant binding energy, and we determine the contact resistances in the junction to be in the range of 1-10 kOhm which is comparable to the best contact resistance reported for edge-contacted graphene-metal contacts. We conclude that conducting all-carbon T-junctions should be feasible. △ Less

Submitted 29 January, 2016; v1 submitted 28 January, 2016; originally announced January 2016.

General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and non-equilibrium Green's function

Authors: Daniele Stradi, Umberto Martinez, Anders Blom, Mads Brandbyge, Kurt Stokbro

Abstract: Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and non-equilibrium Green's function, which… ▽ More Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and non-equilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I-V bias curves simulations. We apply this method to characterize an Ag/Si interface relevant for photovoltaic applications and study the rectifying-to-Ohmic transition as function of the semiconductor do**.We also demonstrate that the standard "Activation Energy" method for the analysis of I-V bias data might be inaccurate for non-ideal interfaces as it neglects electron tunneling, and that finite-size atomistic models have problems in describing these interfaces in the presence of do**, due to a poor representation of space-charge effects. Conversely, the present method deals effectively with both issues, thus representing a valid alternative to conventional procedures for the accurate characterization of metal-semiconductor interfaces. △ Less

Submitted 1 March, 2016; v1 submitted 18 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 155302 (2016)

Current-induced runaway vibrations in dehydrogenated graphene nanoribbons

Authors: Rasmus Bjerregaard Christensen, **g-Tao Lü, Per Hedegård, Mads Brandbyge

Abstract: We employ a semi-classical Langevin approach to study current-induced atomic dynamics in a partially dehydrogenated armchair graphene nanoribbon. All parameters are obtained from density functional theory. The dehydrogenated carbon dimers behave as effective impurities, whose motion decouples from the rest of carbon atoms. The electrical current can couple the dimer motion in a coherent fashion. T… ▽ More We employ a semi-classical Langevin approach to study current-induced atomic dynamics in a partially dehydrogenated armchair graphene nanoribbon. All parameters are obtained from density functional theory. The dehydrogenated carbon dimers behave as effective impurities, whose motion decouples from the rest of carbon atoms. The electrical current can couple the dimer motion in a coherent fashion. The coupling, which is mediated by nonconservative and pseudo-magnetic current-induced forces, change the atomic dynamics, and thereby show their signature in this simple system. We study the atomic dynamics and current-induced vibrational instabilities using a simplified eigen-mode analysis.Our study shows that the armchair nanoribbon serves as a possible testbed for probing the current-induced forces. △ Less

Submitted 23 December, 2015; originally announced December 2015.

Comments: 6 pages, 2 figures, Beilstein J. Nanotechnology, Thematic Series "Molecular machines and devices"

Journal ref: Beilstein Journal of Nanotechnology 7 (1), 68-74 (2016)

Electron and phonon drag in thermoelectric transport through coherent molecular conductors

Authors: **g-Tao Lü, Jian-Sheng Wang, Per Hedegård, Mads Brandbyge

Abstract: We study thermoelectric transport through a coherent molecular conductor connected to two electron and two phonon baths using the nonequilibrium Green's function method. We focus on the mutual drag between electron and phonon transport as a result of `momentum' transfer, which happens only when there are at least two phonon degrees of freedom. After deriving expressions for the linear drag coeffic… ▽ More We study thermoelectric transport through a coherent molecular conductor connected to two electron and two phonon baths using the nonequilibrium Green's function method. We focus on the mutual drag between electron and phonon transport as a result of `momentum' transfer, which happens only when there are at least two phonon degrees of freedom. After deriving expressions for the linear drag coefficients, obeying the Onsager relation, we further investigate their effect on nonequilibrium transport. We show that the drag effect is closely related to two other phenomena: (1) adiabatic charge pum** through a coherent conductor; (2) the current-induced nonconservative and effective magnetic forces on phonons. △ Less

Submitted 24 January, 2016; v1 submitted 23 December, 2015; originally announced December 2015.

Comments: references added, submitted

Journal ref: Phys. Rev. B 93, 205404 (2016)

First-principles method for electron-phonon coupling and electron mobility: Applications to 2D materials

Authors: Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge

Abstract: We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes i… ▽ More We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semi-analytic treatment of part of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene and monolayer MoS$_2$. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. We find that graphene has more than an order of magnitude higher mobility compared to silicene. For MoS$_2$, we obtain several orders of magnitude lower mobilities in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented BTE solver applied in simulation tools based on first-principles and localized basis sets. △ Less

Submitted 6 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 93, 035414 (2016)

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Authors: Nick R. Papior, Tue Gunst, Daniele Stradi, Mads Brandbyge

Abstract: Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the do** and the energy level alignment in the nanojunction, thereby influencing its conductance. Here we investigate the impact of electrostatic gating in nanojunctions between graphene electrodes operating at finite bias. Usin… ▽ More Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the do** and the energy level alignment in the nanojunction, thereby influencing its conductance. Here we investigate the impact of electrostatic gating in nanojunctions between graphene electrodes operating at finite bias. Using first principles quantum transport simulations, we show that the voltage drop across \emph{symmetric} junctions changes dramatically and controllably in gated systems compared to non-gated junctions. In particular, for \emph{p}-type(\emph{n}-type) carriers the voltage drop is located close to the electrode with positive(negative) polarity, i.e. the potential of the junction is pinned to the negative(positive) electrode. We trace this behaviour back to the vanishing density of states of graphene in the proximity of the Dirac point. Due to the electrostatic gating, each electrode exposes different density of states in the bias window between the two different electrode Fermi energies, thereby leading to a non-symmetry in the voltage drop across the device. This selective pinning is found to be independent of device length when carriers are induced either by the gate or dopant atoms, indicating a general effect for electronic circuitry based on graphene electrodes. We envision this could be used to control the spatial distribution of Joule heating in graphene nanostructures, and possibly the chemical reaction rate around high potential gradients. △ Less

Submitted 3 November, 2015; originally announced November 2015.

Comments: 6 pages, 7 figures