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Reconstruction of Angstrom resolution exit-waves by the application of drift-corrected phase-shifting off-axis electron holography
Authors:
J. Lindner,
U. Ross,
T. Meyer,
V. Boureau,
M. Seibt,
Ch. Jooss
Abstract:
Phase-shifting electron holography is an excellent method to reveal electron wave phase information with very high phase sensitivity over a large range of spatial frequencies. It circumvents the limiting trade-off between fringe spacing and visibility of standard off-axis holography. Previous implementations have been limited by the independent drift of biprism and sample. We demonstrate here an a…
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Phase-shifting electron holography is an excellent method to reveal electron wave phase information with very high phase sensitivity over a large range of spatial frequencies. It circumvents the limiting trade-off between fringe spacing and visibility of standard off-axis holography. Previous implementations have been limited by the independent drift of biprism and sample. We demonstrate here an advanced drift correction scheme for the hologram series that exploits the presence of an interface of the TEM specimen to the vacuum area in the hologram. It allows to obtain reliable phase information up to 2π/452 at the 1 Å information limit of the Titan 80-300 kV environmental transmission electron microscope used, by applying a moderate voltage of 250 V to a single biprism for a fringe spacing of 1 Å. The obtained phase and amplitude information is validated at a thin Pt sample by use of multislice image simulation with the frozen lattice approximation and shows excellent agreement. The presented method is applicable in any TEM equipped with at least one electron biprism and thus enables achieving high resolution off-axis holography in various instruments including those for in-situ applications. A software implementation for the acquisition, calibration and reconstruction is provided.
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Submitted 18 April, 2024; v1 submitted 28 March, 2023;
originally announced March 2023.
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Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices
Authors:
Trevor P. Almeida,
Alvaro Palomino,
Steven Lequeux,
Victor Boureau,
Olivier Fruchart,
Ioan Lucian Prejbeanu,
Bernard Dieny,
David Cooper
Abstract:
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of…
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Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating. The experimental practicalities, benefits and limits of using electron holography for analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity.
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Submitted 21 April, 2022;
originally announced April 2022.
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Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films
Authors:
R. Ricca,
V. Boureau,
Y. Bellouard
Abstract:
We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4and SiO2layers of sub-micron thickness. Specifically,we report on the occurrence of a laser-induced elemental intermixing process and on the presence of silicon nanocrystals clusters localized within the multi-layers…
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We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4and SiO2layers of sub-micron thickness. Specifically,we report on the occurrence of a laser-induced elemental intermixing process and on the presence of silicon nanocrystals clusters localized within the multi-layers structure. The spatial distribution of these clusters goes significantly beyond the zone under direct laser exposure providing evidences of energy being channeled transversely to the laser propagation axis at the interface of the nanoscale layers. Thanks to the extreme conditions reigning during laser exposure, this process transposed to various materials may offer a pathway for local and selective crystallization of a variety of compounds and phases, difficult to obtain otherwise.
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Submitted 2 December, 2021;
originally announced December 2021.
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Strained crystalline nanomechanical resonators with ultralow dissipation
Authors:
Alberto Beccari,
Diego A. Visani,
Sergey A. Fedorov,
Mohammad J. Bereyhi,
Victor Boureau,
Nils J. Engelsen,
Tobias J. Kippenberg
Abstract:
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers and at the nanoscale, where soft-clam** and strain engineering have allowed extremely high quality factors. However, these techniques have so far only been a…
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In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers and at the nanoscale, where soft-clam** and strain engineering have allowed extremely high quality factors. However, these techniques have so far only been applied in amorphous materials, specifically silicon nitride. Crystalline materials exhibit significantly lower intrinsic dam** at cryogenic temperatures, due to the absence of two level systems in the bulk, as exploited in Weber bars and silicon optomechanical cavities. Applying dissipation dilution engineering to strained crystalline materials could therefore enable extremely low loss nanomechanical resonators, due to the combination of reduced internal friction, high intrinsic strain, and high yield strength. Pioneering work has not yet fully exploited this potential. Here, we demonstrate that single crystal strained silicon, a material developed for high mobility transistors, can be used to realize mechanical resonators with ultralow dissipation. We observe that high aspect ratio ($>10^5$) strained silicon nanostrings support MHz mechanical modes with quality factors exceeding $10^{10}$ at 7 K, a tenfold improvement over values reported in silicon nitride. At 7 K, the thermal noise-limited force sensitivity is approximately $45\ \mathrm{{zN}/{\sqrt{Hz}}}$ - approaching that of carbon nanotubes - and the heating rate is only 60 quanta-per-second. Our nanomechanical resonators exhibit lower dissipation than the most pristine macroscopic oscillators and their low mass makes them particularly promising for quantum sensing and transduction.
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Submitted 5 July, 2021;
originally announced July 2021.
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High-sensitivity map** of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast
Authors:
Victor Boureau,
Michal Staňo,
Jean-Luc Rouvière,
Jean-Christophe Toussaint,
Olivier Fruchart,
and David Cooper
Abstract:
We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sensitivity. To this end, the magnetic induction of a ferromagnetic NiFe nanowire has been measured and compared to micromagnetic modelling. State-of-the-art electron holography has been performed using the averaging of lar…
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We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sensitivity. To this end, the magnetic induction of a ferromagnetic NiFe nanowire has been measured and compared to micromagnetic modelling. State-of-the-art electron holography has been performed using the averaging of large series of holograms to improve the sensitivity of the measurements. These results are then compared those obtained from pixelated (or 4D) scanning transmission electron microscopy (STEM). This emerging technique uses a pixelated detector to image the local diffraction patterns as the beam is scanned over the sample. For each diffraction pattern, the deflection of the beam is measured and converted into magnetic induction, while scanning the beam allows to build a map. Aberration corrected Lorentz (field-free) configurations of the TEM and STEM were used for an improved spatial resolution. We show that the pixelated STEM approach, even when performed using an old generation of charge-coupled device camera, provides better sensitivity at the expense of spatial resolution. A more general comparison of the two techniques is given.
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Submitted 11 November, 2020; v1 submitted 21 August, 2020;
originally announced August 2020.
