Showing 1–50 of 52 results for author: Botti, S

A non-orthogonal representation of the chemical space

Authors: Tiago F. T. Cerqueira, Silvana Botti, Miguel A. L. Marques

Abstract: We present a novel approach to generate a fingerprint for crystalline materials that balances efficiency for machine processing and human interpretability, allowing its application in both machine learning inference and understanding of structure-property relationships. Our proposed fingerprint has two components: one representing the crystal structure and the other characterizing the chemical com… ▽ More We present a novel approach to generate a fingerprint for crystalline materials that balances efficiency for machine processing and human interpretability, allowing its application in both machine learning inference and understanding of structure-property relationships. Our proposed fingerprint has two components: one representing the crystal structure and the other characterizing the chemical composition. To represent the latter we construct a non-orthogonal space where each axis represents a chemical element and where the angle between the axes quantifies a measure of the similarity between them. The chemical composition is then defined by the point on the unit sphere in this non-orthogonal space. By utilizing dimension reduction techniques we can construct a two-dimensional global map of the space of the thermodynamically stable crystalline compounds. Despite their simplicity, such maps succeed in providing a physical separation of material classes according to basic physical properties. Moreover, this compositional fingerprint can be used as a versatile input for machine learning algorithms, supplanting conventional one-hot representations of the chemical composition. △ Less

Submitted 28 June, 2024; originally announced June 2024.

Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange

Authors: Matthew L. Evans, Johan Bergsma, Andrius Merkys, Casper W. Andersen, Oskar B. Andersson, Daniel Beltrán, Evgeny Blokhin, Tara M. Boland, Rubén Castañeda Balderas, Kamal Choudhary, Alberto Díaz Díaz, Rodrigo Domínguez García, Hagen Eckert, Kristjan Eimre, María Elena Fuentes Montero, Adam M. Krajewski, Jens Jørgen Mortensen, José Manuel Nápoles Duarte, Jacob Pietryga, Ji Qi, Felipe de Jesús Trejo Carrillo, Antanas Vaitkus, Jusong Yu, Adam Zettel, Pedro Baptista de Castro , et al. (34 additional authors not shown)

Abstract: The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 relea… ▽ More The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 release, and has underpinned multiple scientific studies. In this work, we highlight the latest features of the API format, accompanying software tools, and provide an update on the implementation of OPTIMADE in contributing materials databases. We end by providing several use cases that demonstrate the utility of the OPTIMADE API in materials research that continue to drive its ongoing development. △ Less

Submitted 5 April, 2024; v1 submitted 1 February, 2024; originally announced February 2024.

Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI

Authors: Ron Hildebrandt, Michael Seifert, Janine George, Steffen Blaurock, Silvana Botti, Harald Krautscheid, Marius Grundmann, Chris Sturm

Abstract: We demonstrate the determination of anharmonic acoustic phonon properties via second-order Raman scattering exemplarily on copper iodide single crystals. The origin of multi-phonon features from the second-order Raman spectra was assigned by the support of the calculated 2-phonon density of states. In this way, the temperature dependence of acoustic phonons was determined down to 10\,K. To determi… ▽ More We demonstrate the determination of anharmonic acoustic phonon properties via second-order Raman scattering exemplarily on copper iodide single crystals. The origin of multi-phonon features from the second-order Raman spectra was assigned by the support of the calculated 2-phonon density of states. In this way, the temperature dependence of acoustic phonons was determined down to 10\,K. To determine independently the harmonic contributions of respective acoustic phonons, density functional theory (DFT) in quasi-harmonic approximation was used. Finally, the anharmonic contributions were determined. The results are in agreement with earlier publications and extend CuI's determined acoustic phonon properties to lower temperatures with higher accuracy. This approach demonstrates that it is possible to characterize the acoustic anharmonicities via Raman scattering down to zero-temperature renormalization constants of at least 0.1\,cm$^{-1}$. △ Less

Submitted 15 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 10 pages, 5 figures, 4 tables

Structure prediction and characterization of CuI-based ternary $p$-type transparent conductors

Authors: Michael Seifert, Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the visible range and remarkable hole conductivity. However, remaining challenges hinder the utilization of copper iodide's unique properties in real-world applications. To address this, chalcogen do** has emerged as a viabl… ▽ More Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the visible range and remarkable hole conductivity. However, remaining challenges hinder the utilization of copper iodide's unique properties in real-world applications. To address this, chalcogen do** has emerged as a viable approach to enhance the hole concentration in copper iodide. In search of further strategies to improve and tune the electronic properties of this transparent semiconductor, we investigate the ternary phase diagram of copper and iodine with sulphur or selenium by performing structure prediction calculations using the minima hop** method. As a result, we find 11 structures located on or near the convex hull, 9 of which are unreported. Based on our band structure calculations, it appears that sulphur and selenium are promising candidates for achieving ternary semiconductors suitable as $p$-type transparent conducting materials. Additionally, our study reveals the presence of unreported phases that exhibit intriguing topological properties. These findings broaden the scope of potential applications for these ternary systems, highlighting the possibility of harnessing their unique electronic characteristics in diverse electronic devices and systems. △ Less

Submitted 24 May, 2023; originally announced May 2023.

Transfer learning on large datasets for the accurate prediction of material properties

Authors: Noah Hoffmann, Jonathan Schmidt, Silvana Botti, Miguel A. L. Marques

Abstract: Graph neural networks trained on large crystal structure databases are extremely effective in replacing ab initio calculations in the discovery and characterization of materials. However, crystal structure datasets comprising millions of materials exist only for the Perdew-Burke-Ernzerhof (PBE) functional. In this work, we investigate the effectiveness of transfer learning to extend these models t… ▽ More Graph neural networks trained on large crystal structure databases are extremely effective in replacing ab initio calculations in the discovery and characterization of materials. However, crystal structure datasets comprising millions of materials exist only for the Perdew-Burke-Ernzerhof (PBE) functional. In this work, we investigate the effectiveness of transfer learning to extend these models to other density functionals. We show that pre-training significantly reduces the size of the dataset required to achieve chemical accuracy and beyond. We also analyze in detail the relationship between the transfer-learning performance and the size of the datasets used for the initial training of the model and transfer learning. We confirm a linear dependence of the error on the size of the datasets on a log-log scale, with a similar slope for both training and the pre-training datasets. This shows that further increasing the size of the pre-training dataset, i.e. performing additional calculations with a low-cost functional, is also effective, through transfer learning, in improving machine-learning predictions with the quality of a more accurate, and possibly computationally more involved functional. Lastly, we compare the efficacy of interproperty and intraproperty transfer learning. △ Less

Submitted 6 March, 2023; originally announced March 2023.

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Authors: Martin Keller, Abderrezak Belabbes, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the… ▽ More Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the framework of a generalized Ising model, shows that the diamond structure is the most stable under ambient conditions, but hexagonal modifications are close to the phase boundary, especially for Si. Our band-structure calculations using the MBJLDA and HSE06 exchange correlation functionals predict significant changes in electronic states with hexagonality. While Si crystals are always semiconductors with indirect band gaps, the hexagonal Ge polytypes have direct band gaps. The branch point energies for Ge crystals are below the valence band maxima, and therefore the formation of hole gases on Ge surfaces is favoured. Band alignment based on the branch point energy leads to type-I heterocrystalline interfaces between Ge polytypes, where electrons and holes can be trapped in the layer with the higher hexagonality. In contrast, the energy shift of the indirect conduction band minima of Si polytypes is rather weak, leading to delocalization of excited electrons at interfaces, while only holes can localize in the layer with higher hexagonality. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: 37 pages, 7 figures, submitted to Physical Review Materials

Effects of hole do** on the electronic and optical properties of transparent conducting copper iodide

Authors: Michael Seifert, Miguel A. L. Marques, Silvana Botti

Abstract: Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by do** without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions… ▽ More Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by do** without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions on iodine sites can act as shallow acceptors. Following computational predictions, do** by oxygen, sulfur and selenium substitutions on iodine sites has recently been realized in the laboratory, showing however that few experimental challenges have still to be tackled on the way to technological applications. We investigate here by means of {\it ab initio} calculations the effect of such substitutions on the electronic and optical properties of CuI. Our results suggest that sulfur and selenium do** are the best candidates to obtain a controllable increase of hole concentrations, while preserving at the same time transparency in the visible and high hole mobility. △ Less

Submitted 21 December, 2022; originally announced December 2022.

Favorable band alignment for photocatalysis at the strontium germanate interface with silicon

Authors: Tomáš Rauch, Pavel Marton, Silvana Botti, Jiří Hlinka

Abstract: Photocatalytic water splitting is a promising strategy for large-scale clean energy production. However, efficient and low-cost solid-state photocatalysts are still lacking. We present here first-principles calculations to investigate the suitability as photocathode of an epitaxial layer of strontium germanate on a Si(100) single crystal. Conduction and valence bands offsets at the interface betwe… ▽ More Photocatalytic water splitting is a promising strategy for large-scale clean energy production. However, efficient and low-cost solid-state photocatalysts are still lacking. We present here first-principles calculations to investigate the suitability as photocathode of an epitaxial layer of strontium germanate on a Si(100) single crystal. Conduction and valence bands offsets at the interface between these two semiconductors were determined using state-of-the-art approximations of density functional theory for the accurate prediction of band alignments. The resulting type-III band line-up is also confirmed by inspection of the spatially resolved density of states. It is concluded that the electronic structure of the investigated heterostructure is favorable for photocathodic functionality. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Large-scale machine-learning-assisted exploration of the whole materials space

Authors: Jonathan Schmidt, Noah Hoffmann, Hai-Chen Wang, Pedro Borlido, Pedro J. M. A. Carriço, Tiago F. T. Cerqueira, Silvana Botti, Miguel A. L. Marques

Abstract: Crystal-graph attention networks have emerged recently as remarkable tools for the prediction of thermodynamic stability and materials properties from unrelaxed crystal structures. Previous networks trained on two million materials exhibited, however, strong biases originating from underrepresented chemical elements and structural prototypes in the available data. We tackled this issue computing a… ▽ More Crystal-graph attention networks have emerged recently as remarkable tools for the prediction of thermodynamic stability and materials properties from unrelaxed crystal structures. Previous networks trained on two million materials exhibited, however, strong biases originating from underrepresented chemical elements and structural prototypes in the available data. We tackled this issue computing additional data to provide better balance across both chemical and crystal-symmetry space. Crystal-graph networks trained with this new data show unprecedented generalization accuracy, and allow for reliable, accelerated exploration of the whole space of inorganic compounds. We applied this universal network to perform machine-learning assisted high-throughput materials searches including 2500 binary and ternary structure prototypes and spanning about 1 billion compounds. After validation using density-functional theory, we uncover in total 19512 additional materials on the convex hull of thermodynamic stability and ~150000 compounds with a distance of less than 50 meV/atom from the hull. Combining again machine learning and ab-initio methods, we finally evaluate the discovered materials for applications as superconductors, superhard materials, and we look for candidates with large gap deformation potentials, finding several compounds with extreme values of these properties. △ Less

Submitted 2 October, 2022; originally announced October 2022.

Efficient and improved prediction of the band offsets at semiconductor heterojunctions from meta-GGA density functionals

Authors: Arghya Ghosh, Subrata Jana, Tomáš Rauch, Fabien Tran, Miguel A. L. Marques, Silvana Botti, Lucian A. Constantin, Manish K. Niranjan, Prasanjit Samal

Abstract: Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient ap… ▽ More Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient approximation (GGA) significantly underestimate the bulk band gaps. This, in turn, results in inaccurate estimates of the band offsets at the heterointerfaces. In this paper, we investigate the performance of several advanced meta-GGA functionals in the computational prediction of band offsets at semiconductor heterojunctions. In particular, we investigate the performance of r2SCAN (revised strongly-constrained and appropriately-normed functional), rMGGAC (revised semilocal functional based on cuspless hydrogen model and Pauli kinetic energy density functional), mTASK (modified Aschebrock and Kümmel meta-GGA functional), and LMBJ (local modified Becke-Johnson) exchange-correlation functionals. Our results strongly suggest that these meta-GGA functionals for supercell calculations perform quite well, especially, when compared to computationally more demanding GW calculations. We also present band offsets calculated using ionization potentials and electron affinities, as well as band alignment via the branch point energies. Overall, our study shows that the aforementioned meta-GGA functionals can be used within the DFT framework to estimate the band offsets in semiconductor heterostructures with predictive accuracy. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

Authors: Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti

Abstract: We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points… ▽ More We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition. △ Less

Submitted 9 September, 2022; v1 submitted 4 July, 2022; originally announced July 2022.

Comments: Michael Seifert and Evgeny Krüger contributed equally. Some typos were corrected and references were added

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

Authors: Pedro Borlido, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl

Abstract: We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexag… ▽ More We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexagonal elementary crystals is thermodynamically favored, but around and above room temperature random alloys are predicted to be stable. While hexagonal Si has an indirect band gap, the gap of hexagonal Ge is direct with very weak optical transitions at the absorption edge. The alloy band gap remains direct for a Si content below 45\,\% and the oscillator strength of the lowest optical transitions is efficiently enhanced by alloying. The optical spectra show clear trends and both absorption edges and prominent peaks can be tuned with composition. The dependence of transport coefficients on carrier concentration and temperature is similar in cubic and hexagonal alloys. However, the latter display anisotropic response due to the reduced hexagonal symmetry. In particular, the transport mass exhibits a significant directional dependence. Seebeck coefficients and thermoelectric power factors of $n$-doped alloys show non-monotonous variations with the Si content independently of temperature. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Authors: Abderrezak Belabbes, Silvana Botti, Friedhelm Bechstedt

Abstract: The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that… ▽ More The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that the natural band offsets are rather unaffected by the choice to align the vacuum level or the branch point energy, as well as by the use of a hybrid or the Tran-Blaha functional. At interfaces between Ge-rich alloys we observe a type-I heterocharacter with direct band gaps, while Si-rich junctions are type-I but with an indirect band gap. The true band lineups at pseudomorphically grown heterostructures are strongly influenced by the generated biaxial strain of opposite sign in the two adjacent alloys. Our calculations show that the type-I character of the interface is reduced by strain. To prepare alloy heterojunctions suitable for active optoelectronic applications, we discuss how to decrease the compressive biaxial strain at Ge-rich alloys. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Comments: 23 pages, 8 figures

Giant optical oscillator strengths in perturbed hexagonal germanium

Authors: Abderrezak Belabbes, Friedhelm Bechstedt, Silvana Botti

Abstract: We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical… ▽ More We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical transitions. Perturbing the system by replacing a Ge atom in the unit cell with a Si atom boosts of the oscillator strength at the minimum direct gap by orders of magnitude, with a concurrent blue shift of the interband distances. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation-induced wave function mixing. A purely structural modification of the lonsdaleite unit cell of hexagonal Ge yields as well increased optical oscillator strengths, but their magnitude significantly depends on the actual details of the atomic geometry. In particular, moderate tensile uniaxial strain can induce an inversion of the order of the two lowest conduction bands, immediately leading to an extremely efficient enhancement of optical transitions. In general, chemical and/or structural perturbations of the lonsdaleite lattice are shown to be the key to make hexagonal germanium suitable for light emitting devices. △ Less

Submitted 15 December, 2021; originally announced December 2021.

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Authors: Ghada Badawy, Bomin Zhang, Tomáš Rauch, Jamo Momand, Sebastian Koelling, Jason Jung, Sasa Gazibegovic, Oussama Moutanabbir, Bart J. Kooi, Silvana Botti, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers

Abstract: Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topol… ▽ More Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Machine-learning correction to density-functional crystal structure optimization

Authors: Robert Hussein, Jonathan Schmidt, Tomás Barros, Miguel A. L. Marques, Silvana Botti

Abstract: Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constitute… ▽ More Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constituted by experimental crystal structures of the Inorganic Crystal Structure Database matched with PBE-optmized structures stored in the materials project database. We complement these data with PBEsol calculations. We demonstrate that the accuracy and precision of PBE/PBEsol volume predictions can be noticeably improved a posteriori by employing simple, explainable machine learning models. These models can improve PBE unit cell volumes to match the accuracy of PBEsol calculations, and reduce the error of the latter with respect to experiment by 35%. Further, the error of PBE lattice constants is reduced by a factor of 3--5. A further benefit of our approach is the implicit correction of finite temperature effects without performing phonon calculations. △ Less

Submitted 3 November, 2021; originally announced November 2021.

Comments: 62 pages, 5 figures, 3 tables

Journal ref: MRS Bulletin (2022)

Bandgap of two-dimensional materials: Thorough assessment of modern exchange-correlation functionals

Authors: Fabien Tran, Jan Doumont, Leila Kalantari, Peter Blaha, Tomáš Rauch, Pedro Borlido, Silvana Botti, Miguel A. L. Marques, Abhilash Patra, Subrata Jana, Prasanjit Samal

Abstract: The density functional theory (DFT) approximations that are the most accurate for the calculation of band gap of bulk materials are hybrid functionals like HSE06, the MBJ potential, and the GLLB-SC potential. More recently, generalized gradient approximations (GGA), like HLE16, or meta-GGAs, like (m)TASK, have proven to be also quite accurate for the band gap. Here, the focus is on 2D materials an… ▽ More The density functional theory (DFT) approximations that are the most accurate for the calculation of band gap of bulk materials are hybrid functionals like HSE06, the MBJ potential, and the GLLB-SC potential. More recently, generalized gradient approximations (GGA), like HLE16, or meta-GGAs, like (m)TASK, have proven to be also quite accurate for the band gap. Here, the focus is on 2D materials and the goal is to provide a broad overview of the performance of DFT functionals by considering a large test set of 298 2D systems. The present work is an extension of our recent studies [Rauch et al., Phys. Rev. B 101, 245163 (2020) and Patra et al., J. Phys. Chem. C 125, 11206 (2021)]. Due to the lack of experimental results for the band gap of 2D systems, $G_{0}W_{0}$ results were taken as reference. It is shown that the GLLB-SC potential and mTASK functional provide the band gaps that are the closest to $G_{0}W_{0}$. Following closely, the local MBJ potential has a pretty good accuracy that is similar to the accuracy of the more expensive hybrid functional HSE06. △ Less

Submitted 3 January, 2022; v1 submitted 25 May, 2021; originally announced May 2021.

Journal ref: J. Chem. Phys. 155, 104103 (2021)

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

Authors: Pedro Borlido, Jens Renè Suckert, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl

Abstract: We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct ba… ▽ More We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct band gap are very weak. The pseudo-direct character of pure hexagonal Ge is efficiently lifted by alloying. Already for a small admixture of Si, symmetry reduction enhances the oscillator strength of the lowest direct optical transitions. The band gap is direct for a Si content below 45 %. We validate lonsdaleite group-IV alloys to be efficient optical emitters, suitable for integrated optoelectronic applications. △ Less

Submitted 5 May, 2021; originally announced May 2021.

Absorption mechanism of dopamine/DOPAC modified TiO 2 nanoparticles by time-dependent density functional theory calculations

Authors: Costanza Ronchi, Federico Soria, Lorenzo Ferraro, Silvana Botti, Cristiana Di Valentin

Abstract: Donor-modified TiO 2 nanoparticles are interesting hybrid systems shifting the absorption edge of this semiconductor from the ultra-violet to the visible or infrared light spectrum, which is a benefit for several applications ranging from photochemistry, photocatalysis, photovoltaics, or photodynamic therapy. Here, we investigate the absorption properties of two catechol-like molecules, i.e. dopam… ▽ More Donor-modified TiO 2 nanoparticles are interesting hybrid systems shifting the absorption edge of this semiconductor from the ultra-violet to the visible or infrared light spectrum, which is a benefit for several applications ranging from photochemistry, photocatalysis, photovoltaics, or photodynamic therapy. Here, we investigate the absorption properties of two catechol-like molecules, i.e. dopamine and DOPAC ligands, when anchored to a spherical anatase TiO 2 nanoparticle of realistic size (2.2 nm), by means of time-dependent density functional theory calculations. By the differential absorbance spectra with the bare nanoparticle, we show how it is possible to determine the injection mechanism. Since new low-energy absorption peaks are observed, we infer a direct charge transfer injection, which, unexpectedly, does not involve the lowest energy conduction band states. We also find that the more perpendicular the molecular benzene ring is to the surface, the more intense is the absorption, which suggests aiming at high molecular packing in the synthesis. Through a comparative investigation with a flat TiO 2 surface model, we unravel both the curvature and coverage effects. △ Less

Submitted 27 October, 2020; v1 submitted 22 October, 2020; originally announced October 2020.

Stable ordered phases of cuprous iodide with complexes of copper vacancies

Authors: Stefan Jaschik, Mário R. G. Marques, Michael Seifert, Claudia Rödl, Silvana Botti, Miguel A. L. Marques

Abstract: We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100]… ▽ More We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100] crystallographic direction. It turns out that these defect complexes have an important influence on hole conductivity, as they lead to dispersive conducting $p$-states that extend up to around 0.8 eV above the Fermi level. We furthermore observe a characteristic peak in the density of electronic states, which could provide an experimental signature for this type of defect complexes. △ Less

Submitted 14 September, 2020; originally announced September 2020.

Journal ref: Chem. Mater. 31, 7877-7882 (2019)

Efficient strain-induced light emission in lonsdaleite germanium

Authors: Jens René Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectr… ▽ More Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectronic applications. In this work, we investigate the possibility to achieve this band inversion by applying strain. To this end we perform ab initio calculations of the electronic band structure and optical properties of strained hexagonal germanium, using density functional theory with the modified Becke-Johnson exchange-correlation functional and including spin-orbit interaction. We consider hydrostatic pressure, uniaxial strain along the hexagonal c axis, as well as biaxial strain in planes perpendicular to and containing the hexagonal c axis to simulate the effect of a substrate. We find that the conduction-band inversion, and therefore the transition from a pseudo-direct to a direct band gap, is attainable for moderate tensile uniaxial strain parallel to the lonsdaleite c axis. △ Less

Submitted 16 March, 2021; v1 submitted 14 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 024602 (2021)

First-principles identification of single photon emitters based on carbon clusters in hexagonal boron nitride

Authors: Cesar Jara, T. Rauch, Silvana Botti, Miguel A. L. Marques, A. Norambuena, R. Coto, J. R. Maze, F. Munoz

Abstract: A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conforma… ▽ More A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements due to the large spectral weight of low-energy breathing modes, ubiquitous in such defects. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Accurate electronic band gaps of two-dimensional materials from the local modified Becke-Johnson potential

Authors: Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have… ▽ More The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have available to compute band gaps are either inaccurate, computationally expensive, or only applicable to bulk systems. Here we show that reliable band structures of nanostructured systems can now be efficiently calculated using density-functional theory with the local modified Becke-Johnson exchange-correlation functional that we recently proposed. After re-optimizing the parameters of this functional specifically for two-dimensional materials, we show, for a test set of almost 300 systems, that the obtained band gaps are of comparable quality as those obtained using the best hybrid functionals, but at a very reduced computational cost. These results open the way for accurate high-throughput studies of band-structures of two-dimensional materials and for the study of van der Waals heterostructures with large unit cells. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 101, 245163 (2020)

Validation of pseudopotential calculations for the electronic band gap of solids

Authors: Pedro Borlido, Jan Doumont, Fabien Tran, Miguel Marques, Silvana Botti

Abstract: Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functional… ▽ More Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functionals, or for many-body methods, such as $GW$, are often not available. Because of this, employing pseudopotentials created with inconsistent exchange-correlation functionals has become a common practice. Our aim is to quantify systematically the error in the determination of the electronic band gap when cross-functional pseudopotential calculations are performed. To this end we compare band gaps obtained with norm-conserving pseudopotentials or the projector-augmented wave method with all-electron calculations for a large dataset of 473 solids. We focus in particular on density functionals that were designed specifically for band-gap calculations. On average, the absolute error is about 0.1 eV, yielding absolute relative errors in the 5-10\% range. Considering that typical errors stemming from the choice of the functional are usually larger, we conclude that the effect of choosing an inconsistent pseudopotential is rather harmless for most applications. However, we find specific cases where absolute errors can be larger than 1 eV, or others where relative errors can amount to a large fraction of the band gap. △ Less

Submitted 23 March, 2020; originally announced March 2020.

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Authors: E. M. T. Fadaly, A. Dijkstra, J. R. Suckert, D. Ziss, M. A. J. v. Tilburg, C. Mao, Y. Ren, V. T. v. Lange, S. Kölling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J. J. Finley, S. Botti, J. E. M. Haverkort, E. P. A. M. Bakkers

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades… ▽ More Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Comments: 25 pages,5 main figures, 7 supplementary figures

Local modified Becke-Johnson exchange-correlation potential for interfaces, surfaces, and two-dimensional materials

Authors: Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dime… ▽ More The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dimensional systems. This is achieved by using a coordinate-dependent expression for the parameter $c$ that weights the Becke-Russel exchange, in contrast to the original global formulation, where $c$ is just a fitted number. Our potential takes advantage of the excellent description of band gaps provided by the modified Becke-Johnson potential and preserves its modest computational effort. Furthermore, it yields with one single calculation band diagrams and band offsets of heterostructures and surfaces. We exemplify the usefulness and efficiency of our local meta-GGA potential by testing it for a series of interfaces (Si/SiO$_2$, AlAs/GaAs, AlP/GaP, and GaP/Si), a Si surface, and boron nitride monolayer. △ Less

Submitted 24 February, 2020; v1 submitted 1 November, 2019; originally announced November 2019.

On the calculation of the bandgap of periodic solids with MGGA functionals using the total energy

Authors: Fabien Tran, Jan Doumont, Peter Blaha, Miguel A. L. Marques, Silvana Botti, Albert P. Bartók

Abstract: During the last few years, it has become more and more clear that functionals of the meta generalized gradient approximation (MGGA) are more accurate than GGA functionals for the geometry and energetics of electronic systems. However, MGGA functionals are also potentially more interesting for the electronic structure, in particular when the potential is non-multiplicative (i.e., when MGGAs are imp… ▽ More During the last few years, it has become more and more clear that functionals of the meta generalized gradient approximation (MGGA) are more accurate than GGA functionals for the geometry and energetics of electronic systems. However, MGGA functionals are also potentially more interesting for the electronic structure, in particular when the potential is non-multiplicative (i.e., when MGGAs are implemented in the generalized Kohn-Sham framework), which may help to get more accurate bandgaps. Here, we show that the calculation of bandgap of solids with MGGA functionals can be done very accurately also in a non-self-consistent manner. This scheme uses only the total energy and can, therefore, be very useful when the self-consistent implementation of a particular MGGA functional is not available. Since self-consistent MGGA calculations may be difficult to converge, the non-self-consistent scheme may also help to speed-up the calculations. Furthermore, it can be applied to any other types of functionals, for which the implementation of the corresponding potential is not trivial. △ Less

Submitted 1 November, 2019; v1 submitted 2 September, 2019; originally announced September 2019.

Journal ref: J. Chem. Phys. 151, 161102 (2019)

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

Authors: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti

Abstract: High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and… ▽ More High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and not consistent regarding the nature of its gap. Using ab initio density-functional theory, we calculate accurate structural, electronic, and optical properties for hexagonal Ge. Given the well-known sensitivity of electronic-structure calculations for Ge to the underlying approximations, we systematically test the performance of several exchange-correlation functionals, including meta-GGA and hybrid functionals. We first validate our approach for cubic Ge, obtaining atomic geometries and band structures in excellent agreement with available experimental data. Then, the same approach is applied to predict electronic and optical properties of lonsdaleite Ge. We portray lonsdaleite Ge as a direct semiconductor with only weakly dipole-active lowest optical transitions, small band gap, huge crystal-field splitting, and strongly anisotropic effective masses. The unexpectedly small direct gap and the oscillator strengths of the lowest optical transitions are explained in terms of symmetry and back-folding of energy bands of the diamond structure. △ Less

Submitted 5 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Materials 3, 034602 (2019)

Low-density silicon allotropes for photovoltaic applications

Authors: Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Thomas J. Lenosky, Stefan Goedecker

Abstract: Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hop** crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase… ▽ More Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hop** crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total 44 metastable phases are presented, of which 11 exhibit direct or quasi-direct band-gaps in the range of $\approx$1.0-1.8 eV, close to the optimal Shockley-Queisser limit of $\approx$1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized. △ Less

Submitted 28 April, 2015; v1 submitted 23 April, 2015; originally announced April 2015.

Identification of novel Cu, Ag, and Au ternary oxides from global structural prediction

Authors: Tiago F. T. Cerqueira, Sun Lin, Maximilian Amsler, Stefan Goedecker, Silvana Botti, Miguel A. L. Marques

Abstract: We use ab initio global structural prediction, and specifically the minima hop** method, to explore the periodic table in search of novel oxide phases. In total, we study 183 different compositions of the form MXO2, where M=(Cu, Ag, Au) and X is an element of the periodic table. This set includes the well-known Cu delafossite compounds that are, up to now, the best p-type transparent conductive… ▽ More We use ab initio global structural prediction, and specifically the minima hop** method, to explore the periodic table in search of novel oxide phases. In total, we study 183 different compositions of the form MXO2, where M=(Cu, Ag, Au) and X is an element of the periodic table. This set includes the well-known Cu delafossite compounds that are, up to now, the best p-type transparent conductive oxides known to mankind. Our calculations discover 81 stable compositions, out of which only 36 are included in available databases. Some of these new phases are potentially good candidates for transparent electrodes. These results demonstrate, on one hand, how incomplete is still our knowledge of the phase-space of stable ternary materials. On the other hand, we show that structural prediction combined with high-throughput approaches is a powerful tool to extend that knowledge, paving the way for the experimental discovery of new materials on a large scale. △ Less

Submitted 25 March, 2015; originally announced March 2015.

Estimating Excitonic Effects in the Absorption Spectra of Solids: Problems and Insight from a Guided Iteration Scheme

Authors: Santiago Rigamonti, Silvana Botti, Valérie Veniard, Claudia Draxl, Lucia Reining, Francesco Sottile

Abstract: A major obstacle for computing optical spectra of solids is the lack of reliable approximations for capturing excitonic effects within time-dependent density-functional theory. We show that the trustful prediction of strongly bound electron-hole pairs within this framework using simple approximations is still a challenge and that available promising results have to be revisited. Deriving a set of… ▽ More A major obstacle for computing optical spectra of solids is the lack of reliable approximations for capturing excitonic effects within time-dependent density-functional theory. We show that the trustful prediction of strongly bound electron-hole pairs within this framework using simple approximations is still a challenge and that available promising results have to be revisited. Deriving a set of analytical formula we analyze and explain the difficulties. We deduce an alternative approximation from an iterative scheme guided by previously available knowledge, significantly improving the description of exciton binding energies. Finally, we show how one can "read" exciton binding energies from spectra determined in the random phase approximation, without any further calculation. △ Less

Submitted 26 March, 2015; v1 submitted 29 November, 2014; originally announced December 2014.

Comments: 5 pages, 2 figures plus supplemental material

Conducting boron sheets formed by the reconstruction of the α-boron (111) surface

Authors: Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: Systematic ab initio structure prediction was applied for the first time to predict low energy surface reconstructions by employing the minima hop** method on the α-boron (111) surface. Novel reconstruction geometries were identified and carefully characterized in terms of structural and electronic properties. Our calculations predict the formation of a planar, mono-layer sheet at the surface, w… ▽ More Systematic ab initio structure prediction was applied for the first time to predict low energy surface reconstructions by employing the minima hop** method on the α-boron (111) surface. Novel reconstruction geometries were identified and carefully characterized in terms of structural and electronic properties. Our calculations predict the formation of a planar, mono-layer sheet at the surface, which is responsible for conductive surface states. Furthermore, the isolated boron sheet is shown to be the ground state 2D-structure in vacuum at a hole density of η=1/5 and is therefore a potential candidate as a precursor for boron nano-structures. △ Less

Submitted 1 July, 2013; originally announced July 2013.

First-principles predicted low-energy structures of NaSc(BH4)4

Authors: Tran Doan Huan, Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: According to previous interpretations of experimental data, sodium-scandium double-cation borohydride NaSc(BH$_4$)$_4$ crystallizes in the crystallographic space group $Cmcm$ where each sodium (scandium) atom is surrounded by six scandium (sodium) atoms. A careful investigation of this phase based on \textit{ab initio} calculations indicates that the structure is dynamically unstable and gives ris… ▽ More According to previous interpretations of experimental data, sodium-scandium double-cation borohydride NaSc(BH$_4$)$_4$ crystallizes in the crystallographic space group $Cmcm$ where each sodium (scandium) atom is surrounded by six scandium (sodium) atoms. A careful investigation of this phase based on \textit{ab initio} calculations indicates that the structure is dynamically unstable and gives rise to an energetically and dynamically more favorable phase with $C222_1$ symmetry and nearly identical x-ray diffraction pattern. By additionally performing extensive structural searches with the minima-hop** method we discover a class of new low-energy structures exhibiting a novel structural motif in which each sodium (scandium) atom is surrounded by four scandium (sodium) atoms arranged at the corners of either a rectangle with nearly equal sides or a tetrahedron. These new phases are all predicted to be insulators with band gaps of $7.9-8.2$ eV. Finally, we estimate the influence of these structures on the hydrogen-storage performance of NaSc(BH$_4$)$_4$. △ Less

Submitted 29 March, 2014; v1 submitted 8 June, 2013; originally announced June 2013.

Comments: Version published

Journal ref: J. Chem. Phys. 140, 124708 (2014)

Strong renormalization of the electronic band gap due to lattice polarization in the GW formalism

Authors: Silvana Botti, Miguel A. L. Marques

Abstract: The self-consistent GW band gaps are known to be significantly overestimated. We show that this overestimation is, to a large extent, due to the neglect of the contribution of the lattice polarization to the screening of the electron-electron interaction. To solve this problem, we derive within the GW formalism a generalized plasmon-pole model that accounts for lattice polarization. The resulting… ▽ More The self-consistent GW band gaps are known to be significantly overestimated. We show that this overestimation is, to a large extent, due to the neglect of the contribution of the lattice polarization to the screening of the electron-electron interaction. To solve this problem, we derive within the GW formalism a generalized plasmon-pole model that accounts for lattice polarization. The resulting GW self-energy is used to calculate the band structures of a set of binary semiconductors and insulators. The lattice contribution always decreases the band gap. The shrinkage increases with the size of the longitudinal-transverse optical splitting and it can represent more than 15% of the band gap in highly polar compounds, reducing the band-gap percentage error by a factor of three. △ Less

Submitted 30 April, 2013; originally announced April 2013.

Comments: Accepted for publication in Phys. Rev. Lett

Low-Energy Polymeric Phases of Alanates

Authors: Tran Doan Huan, Maximilian Amsler, Miguel A. L. Marques, Silvana Botti, Alexander Willand, Stefan Goedecker

Abstract: Low-energy structures of alanates are currently known to be described by patterns of isolated, nearly ideal tetrahedral [AlH$_4$] anions and metal cations. We discover that the novel polymeric motif recently proposed for LiAlH$_4$ plays a dominant role in a series of alanates, including LiAlH$_4$, NaAlH$_4$, KAlH$_4$, Mg(AlH$_4$)$_2$, Ca(AlH$_4$)$_2$ and Sr(AlH$_4$)$_2$. In particular, most of the… ▽ More Low-energy structures of alanates are currently known to be described by patterns of isolated, nearly ideal tetrahedral [AlH$_4$] anions and metal cations. We discover that the novel polymeric motif recently proposed for LiAlH$_4$ plays a dominant role in a series of alanates, including LiAlH$_4$, NaAlH$_4$, KAlH$_4$, Mg(AlH$_4$)$_2$, Ca(AlH$_4$)$_2$ and Sr(AlH$_4$)$_2$. In particular, most of the low-energy structures discovered for the whole series are characterized by networks of corner-sharing [AlH$_6$] octahedra, forming wires and/or planes throughout the materials. Finally, for Mg(AlH$_4$)$_2$ and Sr(AlH$_4$)$_2$, we identify two polymeric phases to be lowest in energy at low temperatures. △ Less

Submitted 27 March, 2013; v1 submitted 4 November, 2012; originally announced November 2012.

Comments: 9 pages, 8 figures, 2 tables, including supplemental material

Journal ref: Phys. Rev. Lett 110, 135502 (2013)

Speeding up the solution of the Bethe-Salpeter equation by a double-grid method and Wannier interpolation

Authors: David Kammerlander, Silvana Botti, Miguel A. L. Marques, Andrea Marini, Claudio Attaccalite

Abstract: The Bethe-Salpeter equation is a widely used approach to describe optical excitations in bulk semiconductors. It leads to spectra that are in very good agreement with experiment, but the price to pay for such accuracy is a very high computational burden. One of the main bottlenecks is the large number of k-points required to obtain converged spectra. In order to circumvent this problem we propose… ▽ More The Bethe-Salpeter equation is a widely used approach to describe optical excitations in bulk semiconductors. It leads to spectra that are in very good agreement with experiment, but the price to pay for such accuracy is a very high computational burden. One of the main bottlenecks is the large number of k-points required to obtain converged spectra. In order to circumvent this problem we propose a strategy to solve the Bethe-Salpeter equation based on a double-grid technique coupled to a Wannier interpolation of the Kohn-Sham band structure. This strategy is then benchmarked for a particularly difficult case, the calculation of the absorption spectrum of GaAs, and for the well studied case of Si. The considerable gains observed in these cases fully validate our approach, and open the way for the application of the Bethe-Salpeter equation to large and complex systems. △ Less

Submitted 7 September, 2012; originally announced September 2012.

Comments: 5 pages, 3 figures. Accepted for Phys. Rev. B

Journal ref: Phys. Rev. B, 86, 125203 (2012)

Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications

Authors: Silvana Botti, José A. Flores-Livas, Maximilian Amsler, Stefan Goedecker, Miguel A. L. Marques

Abstract: We present state-of-the-art first-principle calculations of the electronic and optical properties of silicon allotropes with interesting characteristics for applications in thin-film solar cells. These new phases consist of distorted sp$^3$ silicon networks and have a lower formation energy than other experimentally produced silicon phases. Some of these structures turned out to have quasi-direct… ▽ More We present state-of-the-art first-principle calculations of the electronic and optical properties of silicon allotropes with interesting characteristics for applications in thin-film solar cells. These new phases consist of distorted sp$^3$ silicon networks and have a lower formation energy than other experimentally produced silicon phases. Some of these structures turned out to have quasi-direct and dipole-allowed band gaps in the range 0.8--1.5\,eV, and to display absorption coefficients comparable with those of chalcopyrites used in thin-film record solar cells. △ Less

Submitted 26 March, 2012; originally announced March 2012.

Comments: submitted

Prediction of a novel monoclinic carbon allotrope

Authors: Maximilian Amsler, José A. Flores-Livas, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: A novel allotrope of carbon with $P2/m$ symmetry was identified during an \emph{ab-initio} minima-hop** structural search which we call $M10$-carbon. This structure is predicted to be more stable than graphite at pressures above 14.4 GPa and consists purely of $sp^3$ bonds. It has a high bulk modulus and is almost as hard as diamond. A comparison of the simulated X-ray diffraction pattern shows… ▽ More A novel allotrope of carbon with $P2/m$ symmetry was identified during an \emph{ab-initio} minima-hop** structural search which we call $M10$-carbon. This structure is predicted to be more stable than graphite at pressures above 14.4 GPa and consists purely of $sp^3$ bonds. It has a high bulk modulus and is almost as hard as diamond. A comparison of the simulated X-ray diffraction pattern shows a good agreement with experimental results from cold compressed graphite. △ Less

Submitted 27 February, 2012; originally announced February 2012.

Comments: 3 pages, 3 figures

Journal ref: Eur. Phys. J. B (2013) 86: 383

High pressure structures of disilane and their superconducting properties

Authors: Maximilian Amsler, José A. Flores-Livas, Thomas J. Lenosky, Lauri Lehtovaara, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: A systematic ab initio search for low enthalpy phases of disilane (Si_2H_6) at high pressures was performed based on the minima hop** method. We found a novel metallic phase of disilane with Cmcm symmetry, which is enthalpically more favorable than the recently proposed structures of disilane up to 280 GPa, but revealing compositional instability below 190 GPa. The Cmcm phase has a moderate elec… ▽ More A systematic ab initio search for low enthalpy phases of disilane (Si_2H_6) at high pressures was performed based on the minima hop** method. We found a novel metallic phase of disilane with Cmcm symmetry, which is enthalpically more favorable than the recently proposed structures of disilane up to 280 GPa, but revealing compositional instability below 190 GPa. The Cmcm phase has a moderate electron-phonon coupling yielding a superconducting transition temperature T_c of around 20 K at 100 GPa, decreasing to 13 K at 220 GPa. These values are an order of magnitude smaller than previously predicted T_c for disilane, and cast strong doubts on the possibility of high-T_c superconductivity in these systems as well as in other hydrogen-rich compounds under moderate pressure. △ Less

Submitted 27 November, 2011; originally announced November 2011.

Journal ref: Phys. Rev. Lett. 108, 117004 (2012)

The crystal structure of cold compressed graphite

Authors: Maximilian Amsler, José A. Flores-Livas, Lauri Lehtovaara, Felix Balima, S. Alireza Ghasemi, Denis Machon, Stéphane Pailhès, Alexander Willand, Damien Caliste, Silvana Botti, Alfonso San Miguel, Stefan Goedecker, Miguel A. L. Marques

Abstract: Through a systematic structural search we found an allotrope of carbon with Cmmm symmetry which we predict to be more stable than graphite for pressures above 10 GPa. This material, which we refer to as Z-carbon, is formed by pure sp3 bonds and is the only carbon allotrope which provides an excellent match to unexplained features in experimental X-ray diffraction and Raman spectra of graphite unde… ▽ More Through a systematic structural search we found an allotrope of carbon with Cmmm symmetry which we predict to be more stable than graphite for pressures above 10 GPa. This material, which we refer to as Z-carbon, is formed by pure sp3 bonds and is the only carbon allotrope which provides an excellent match to unexplained features in experimental X-ray diffraction and Raman spectra of graphite under pressure. The transition from graphite to Z-carbon can occur through simple sliding and buckling of graphene sheets. Our calculations predict that Z-carbon is a transparent wide band gap semiconductor with a hardness comparable to diamond. △ Less

Submitted 6 September, 2011; originally announced September 2011.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 108, 117004 (2012)

Band structures of Cu2nSnS4 and Cu2nSnSe4 from many-body methods

Authors: Silvana Botti, David Kammerlander, Miguel A. L. Marque

Abstract: We calculate the band structures of kesterite and stannite Cu2ZnSnS4 and Cu2ZnSnSe4, using a state-of-the-art self-consistent GW approach. Our accurate quasiparticle states allow to discuss: the dependence of the gap on the anion displacement; the key-role of the non-locality of the exchange-correlation potential to obtain good structural parameters; the reliability of less expensive hybrid functi… ▽ More We calculate the band structures of kesterite and stannite Cu2ZnSnS4 and Cu2ZnSnSe4, using a state-of-the-art self-consistent GW approach. Our accurate quasiparticle states allow to discuss: the dependence of the gap on the anion displacement; the key-role of the non-locality of the exchange-correlation potential to obtain good structural parameters; the reliability of less expensive hybrid functional and GGA+U approaches. In particular, we show that even if the band gap is correctly reproduced by hybrid functionals, the band-edge corrections are in disagreement with self-consistent GW results, which has decisive implications for the positioning of the defect levels in the band gap. △ Less

Submitted 25 May, 2011; originally announced May 2011.

Comments: accepted for publication in App. Phys. Lett. (2011)

Enhancing the superconducting transition temperature of BaSi2 by structural tuning

Authors: José A. Flores-Livas, Régis Debord, Silvana Botti, Alfonso San Miguel, Miguel A. L. Marques, Stéphane Pailhès

Abstract: We present a joint experimental and theoretical study of the superconducting phase of the layered binary silicide BaSi2. Compared with the layered AlB2 structure of graphite or diboride-like superconductors, in the hexagonal structure of binary silicides the sp3 arrangement of silicon atoms leads to corrugated sheets. Through a high-pressure synthesis procedure we are able to modify the buckling o… ▽ More We present a joint experimental and theoretical study of the superconducting phase of the layered binary silicide BaSi2. Compared with the layered AlB2 structure of graphite or diboride-like superconductors, in the hexagonal structure of binary silicides the sp3 arrangement of silicon atoms leads to corrugated sheets. Through a high-pressure synthesis procedure we are able to modify the buckling of these sheets, obtaining the enhancement of the superconducting transition temperature from 4 K to 8.7 K when the silicon planes flatten out. By performing ab-initio calculations based on density functional theory we explain how the electronic and phononic properties of the system are strongly affected by changes in the buckling. This mechanism is likely present in other intercalated layered superconductors, opening the way to the tuning of superconductivity through the control of internal structural parameters. △ Less

Submitted 5 November, 2010; originally announced November 2010.

Comments: Submitted

Density-based mixing parameter for hybrid functionals

Authors: Miguel A. L. Marques, Julien Vidal, Micael J. T. Oliveira, Lucia Reining, Silvana Botti

Abstract: A very popular ab-initio scheme to calculate electronic properties in solids is the use of hybrid functionals in density functional theory (DFT) that mixes a portion of Fock exchange with DFT functionals. In spite of their success, a major problem still remains, related to the use of one single mixing parameter for all materials. Guided by physical arguments that connect the mixing parameter to th… ▽ More A very popular ab-initio scheme to calculate electronic properties in solids is the use of hybrid functionals in density functional theory (DFT) that mixes a portion of Fock exchange with DFT functionals. In spite of their success, a major problem still remains, related to the use of one single mixing parameter for all materials. Guided by physical arguments that connect the mixing parameter to the dielectric properties of the solid, and ultimately to its band gap, we propose a method to calculate this parameter from the electronic density alone. This method is able to cut significantly the error of traditional hybrid functionals for large and small gap materials, while retaining a good description of structural properties. Moreover, its implementation is simple and leads to a negligible increase of the computational time. △ Less

Submitted 22 September, 2010; originally announced September 2010.

Comments: submitted

Excitonic effects in the optical properties of CdSe nanowires

Authors: J. G. Vilhena, S. Botti, M. A. L. Marques

Abstract: Using a first-principle approach beyond density functional theory we calculate the electronic and optical properties of small diameter CdSe nanowires.Our results demonstrate how some approximations commonly used in bulk systems fail at this nano-scale level and how indispensable it is to include crystal local fields and excitonic effects to predict the unique optical properties of nanowires. Fro… ▽ More Using a first-principle approach beyond density functional theory we calculate the electronic and optical properties of small diameter CdSe nanowires.Our results demonstrate how some approximations commonly used in bulk systems fail at this nano-scale level and how indispensable it is to include crystal local fields and excitonic effects to predict the unique optical properties of nanowires. From our results, we then construct a simple model that describes the optical gap as a function of the diameter of the wire, that turns out to be in excellent agreement with experiments for intermediate and large diameters. △ Less

Submitted 8 February, 2010; originally announced February 2010.

Comments: submitted

Journal ref: Appl. Phys. Lett. 96, 123106 (2010)

Effects of polarization on the band-structure of delafossite transparent conductive oxides

Authors: Julien Vidal, Fabio Trani, Fabien Bruneval, Miguel A. L. Marques, Silvana Botti

Abstract: We use hybrid functionals and restricted self-consistent GW, state-of-the-art theoretical approaches for quasiparticle band structures, to study the electronic states of delafossite Cu(Al,In)O$_2$, the first p-type and bipolar transparent conductive oxides. We show that self-consistent GW gives remarkably wider band gaps than all the other approaches used so far. Accounting for polaronic effects i… ▽ More We use hybrid functionals and restricted self-consistent GW, state-of-the-art theoretical approaches for quasiparticle band structures, to study the electronic states of delafossite Cu(Al,In)O$_2$, the first p-type and bipolar transparent conductive oxides. We show that self-consistent GW gives remarkably wider band gaps than all the other approaches used so far. Accounting for polaronic effects in the GW scheme we recover a very nice agreement with experiments. Furthermore, the modifications with respect to the Kohn-Sham bands are strongly k-dependent, which makes questionable the common practice of using a scissor operator. Finally, our results support the view that the low energy structures found in optical experiments, and initially attributed to an indirect transition, are due to intrinsic defects in the samples. △ Less

Submitted 29 July, 2010; v1 submitted 3 December, 2009; originally announced December 2009.

Comments: published

Journal ref: Phys. Rev. Lett. 104, 136401 (2010)

Alloying effects on the optical properties of Ge$_{1-x}$Si$_x$ nanocrystals from TDDFT and comparison with effective-medium theory

Authors: Silvana Botti, Hans-Christian Weissker, Miguel A. L. Marques

Abstract: We present the optical spectra of Ge$_{1-x}$Si$_x$ alloy nanocrystals calculated with time-dependent density-functional theory in the adiabatic local-density ap proximation (TDLDA). The spectra change smoothly as a function of the compositio n $x$. On the Ge side of the composition range, the lowest excitations at the ab sorption edge are almost pure Kohn-Sham independent-particle HOMO-LUMO tran… ▽ More We present the optical spectra of Ge$_{1-x}$Si$_x$ alloy nanocrystals calculated with time-dependent density-functional theory in the adiabatic local-density ap proximation (TDLDA). The spectra change smoothly as a function of the compositio n $x$. On the Ge side of the composition range, the lowest excitations at the ab sorption edge are almost pure Kohn-Sham independent-particle HOMO-LUMO transitio ns, while for higher Si contents strong mixing of transitions is found. Within T DLDA the first peak is slightly higher in energy than in earlier independent-par ticle calculations. However, the absorption onset and in particular its composit ion dependence is similar to independent-particle results. Moreover, classical depolarization effects are responsible for a very strong suppression of the abs orption intensity. We show that they can be taken into account in a simpler way using Maxwell-Garnett classical effective-medium theory. Emission spectra are in vestigated by calculating the absorption of excited nanocrystals at their relaxe d geometry. The structural contribution to the Stokes shift is about 0.5 eV. Th e decomposition of the emission spectra in terms of independent-particle transit ions is similar to what is found for absorption. For the emission, very weak tra nsitions are found in Ge-rich clusters well below the strong absorption onset. △ Less

Submitted 29 January, 2009; originally announced January 2009.

Comments: submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 79, 155440 (2009)

Cluster-surface and cluster-cluster interactions: Ab initio calculations and modeling of van der Waals forces

Authors: Silvana Botti, Alberto Castro, Xavier Andrade, Angel Rubio, Miguel A. L. Marques

Abstract: We present fully ab-initio calculations of van der Waals coefficients for two different situations: i) the interaction between hydrogenated silicon clusters; and ii) the interactions between these nanostructures and a non metallic surface (a silicon or a silicon carbide surface). The methods used are very efficient, and allow the calculation of systems containing hundreds of atoms. The results o… ▽ More We present fully ab-initio calculations of van der Waals coefficients for two different situations: i) the interaction between hydrogenated silicon clusters; and ii) the interactions between these nanostructures and a non metallic surface (a silicon or a silicon carbide surface). The methods used are very efficient, and allow the calculation of systems containing hundreds of atoms. The results obtained are further analyzed and understood with the help of simple models. These models can be of interest for molecular dynamics simulations of silicon nanostructures on surfaces, where they can give a very fast yet sufficiently accurate determination of the van der Waals interaction at large separations. △ Less

Submitted 18 June, 2008; originally announced June 2008.

Comments: Phys. Rev. B

Efficient calculation of van der Waals dispersion coefficients with time-dependent density functional theory in real time: application to polycyclic aromatic hydrocarbons

Authors: Miguel A. L. Marques, Alberto Castro, Giuliano Malloci, Giacomo Mulas, Silvana Botti

Abstract: The van der Waals dispersion coefficients of a set of polycyclic aromatic hydrocarbons, ranging in size from the single-cycle benzene to circumovalene (C66H20), are calculated with a real-time propagation approach to time-dependent density functional theory (TDDFT). In the non-retarded regime, the Casimir-Polder integral is employed to obtain C6, once the dynamic polarizabilities have been compu… ▽ More The van der Waals dispersion coefficients of a set of polycyclic aromatic hydrocarbons, ranging in size from the single-cycle benzene to circumovalene (C66H20), are calculated with a real-time propagation approach to time-dependent density functional theory (TDDFT). In the non-retarded regime, the Casimir-Polder integral is employed to obtain C6, once the dynamic polarizabilities have been computed at imaginary frequencies with TDDFT. On the other hand, the numerical coefficient that characterizes the fully retarded regime is obtained from the static polarizabilities. This ab initio strategy has favorable scaling with the size of the system - as demonstrated by the size of the reported molecules - and can be easily extended to obtain higher order van der Waals coefficients. △ Less

Submitted 13 March, 2007; v1 submitted 12 March, 2007; originally announced March 2007.

Comments: submitted to J. Chem. Phys

A time-dependent density functional theory scheme for efficient calculations of dynamic (hyper)polarizabilities

Authors: Xavier Andrade, Silvana Botti, Miguel A. L. Marques, Angel Rubio

Abstract: We present an efficient perturbative method to obtain both static and dynamic polarizabilities and hyperpolarizabilities of complex electronic systems. This approach is based on the solution of a frequency dependent Sternheimer equation, within the formalism of time-dependent density functional theory, and allows the calculation of the response both in resonance and out of resonance. Furthermore… ▽ More We present an efficient perturbative method to obtain both static and dynamic polarizabilities and hyperpolarizabilities of complex electronic systems. This approach is based on the solution of a frequency dependent Sternheimer equation, within the formalism of time-dependent density functional theory, and allows the calculation of the response both in resonance and out of resonance. Furthermore, the excellent scaling with the number of atoms opens the way to the investigation of response properties of very large molecular systems. To demonstrate the capabilities of this method, we implemented it in a real-space (basis-set free) code, and applied it to benchmark molecules, namely CO, H2O, and paranitroaniline (PNA). Our results are in agreement with experimental and previous theoretical studies, and fully validate our approach. △ Less

Submitted 4 April, 2007; v1 submitted 25 January, 2007; originally announced January 2007.

Comments: 9 pages, 4 figures

Identification of fullerene-like CdSe nanoparticles from optical spectroscopy calculations

Authors: Silvana Botti, Miguel A. L. Marques

Abstract: Semiconducting nanoparticles are the building blocks of optical nanodevices as their electronic states, and therefore light absorption and emission, can be controlled by modifying their size and shape. CdSe is perhaps the most studied of these nanoparticles, due to the efficiency of its synthesis, the high quality of the resulting samples, and the fact that the optical gap is in the visible rang… ▽ More Semiconducting nanoparticles are the building blocks of optical nanodevices as their electronic states, and therefore light absorption and emission, can be controlled by modifying their size and shape. CdSe is perhaps the most studied of these nanoparticles, due to the efficiency of its synthesis, the high quality of the resulting samples, and the fact that the optical gap is in the visible range. In this article, we study light absorption of CdSe nanostructures with sizes up to 1.5 nm within density functional theory. We study both bulk fragments with wurtzite symmetry and novel fullerene-like core-cage structures. The comparison with recent experimental optical spectra allows us to confirm the synthesis of these fullerene-like CdSe clusters. △ Less

Submitted 4 January, 2007; v1 submitted 22 May, 2006; originally announced May 2006.

Journal ref: Phys. Rev. B 2007