-
Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Authors:
Joanna Sitnicka,
Kyungwha Park,
Paweł Skupiński,
Krzysztof Grasza,
Anna Reszka,
Kamil Sobczak,
Jolanta Borysiuk,
Zbigniew Adamus,
Mateusz Tokarczyk,
Andrei Avdonin,
Irina Fedorchenko,
Irina Abaloszewa,
Sylwia Turczyniak-Surdacka,
Natalia Olszowska,
Jacek Kolodziej,
Bogdan J. Kowalski,
Haiming Deng,
Marcin Konczykowski,
Lia Krusin-Elbaum,
Agnieszka Wolos
Abstract:
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compos…
▽ More
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.
△ Less
Submitted 9 September, 2021; v1 submitted 31 August, 2021;
originally announced September 2021.
-
Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice
Authors:
Haiming Deng,
Zhiyi Chen,
Agnieszka Wolos,
Marcin Konczykowski,
Kamil Sobczak,
Joanna Sitnicka,
Irina V. Fedorchenko,
Jolanta Borysiuk,
Tristan Heider,
Lukasz Plucinski,
Kyungwha Park,
Alexandru B. Georgescu,
Jennifer Cano,
Lia Krusin-Elbaum
Abstract:
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronic…
▽ More
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.
△ Less
Submitted 28 January, 2020;
originally announced January 2020.
-
Direct measurement of hyperfine shifts and radiofrequency manipulation of the nuclear spins in individual CdTe/ZnTe quantum dots
Authors:
G. Ragunathan,
J. Kobak,
G. Gillard,
W. Pacuski,
K. Sobczak,
J. Borysiuk,
M. S. Skolnick,
E. A. Chekhovich
Abstract:
We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields $B_z\gtrsim0.1$ T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with optical initialization time of $\sim$ 1 ms and polarization lifetime exceeding $\sim$ 1 s. Nuclear magnetic resonance spectroscopy of in…
▽ More
We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields $B_z\gtrsim0.1$ T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with optical initialization time of $\sim$ 1 ms and polarization lifetime exceeding $\sim$ 1 s. Nuclear magnetic resonance spectroscopy of individual dots reveals strong electron-nuclear interactions characterized by the Knight fields $|B_e|\gtrsim50$ mT, an order of magnitude stronger than in III-V semiconductor quantum dots. Our studies confirm II-VI semiconductor quantum dots as a promising platform for hybrid electron-nuclear spin quantum registers, combining the excellent optical properties comparable to III-V dots, and the dilute nuclear spin environment similar to group-IV semiconductors.
△ Less
Submitted 19 July, 2018;
originally announced July 2018.
-
Antireflective photonic structure for coherent nonlinear spectroscopy of single magnetic quantum dots
Authors:
W. Pacuski,
J. -G. Rousset,
V. Delmonte,
T. Jakubczyk,
K. Sobczak,
J. Borysiuk,
K. Sawicki,
E. Janik,
J. Kasprzak
Abstract:
This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range cover…
▽ More
This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range covering the QD transitions. This allows to perform coherent, nonlinear, resonant spectroscopy of individual QDs. The coherence dynamics of a charged exciton is measured via four-wave mixing, with the estimated dephasing time $T_2=(210\,\pm\,40)$ ps. The same structure contains QDs doped with single Mn$^{2+}$ ions, as detected in photoluminescence spectra. Our work therefore paves the way toward investigating and controlling an exciton coherence coupled, via $s$,$p$-$d$ exchange interaction, with an individual spin of a magnetic dopant.
△ Less
Submitted 23 March, 2017;
originally announced March 2017.
-
Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells
Authors:
Jean-Guy Rousset,
Barbara Piętka,
Mateusz Król,
Rafał Mirek,
Katarzyna Lekenta,
Jacek Szczytko,
Jolanta Borysiuk,
Jan Suffczynski,
Tomasz Kazimierczuk,
Mateusz Goryca,
Tomasz Smoleński,
Piotr Kossacki,
Michał Nawrocki,
Wojciech Pacuski
Abstract:
We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already…
▽ More
We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.
△ Less
Submitted 15 October, 2015;
originally announced October 2015.
-
MBE grown microcavities based on selenium and tellurium compounds
Authors:
J. -G. Rousset,
T. Jakubczyk,
J. Kobak,
R. Rudniewski,
P. Piotrowski,
M. Ściesiek,
E. Janik,
J. Borysiuk,
T. Slupinski,
A. Golnik,
P. Kossacki,
M. Nawrocki,
W. Pacuski
Abstract:
In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength f…
▽ More
In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.
△ Less
Submitted 15 October, 2013;
originally announced October 2013.
-
An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Authors:
Stanisław Krukowski,
Jakub Sołtys,
Jolanta Borysiuk,
Jacek Piechota
Abstract:
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with th…
▽ More
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.
△ Less
Submitted 18 September, 2012;
originally announced September 2012.
-
Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Rafal Bożek,
Jacek Piechota,
Stanislaw Krukowski,
Wlodzimierz Strupinski,
Jacek M. Baranowski,
Roman Stepniewski
Abstract:
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate,…
▽ More
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface
△ Less
Submitted 30 September, 2011;
originally announced September 2011.
-
Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
Authors:
M. Orlita,
C. Faugeras,
J. Borysiuk,
J. M. Baranowski,
W. Strupinski,
M. Sprinkle,
C. Berger,
W. A. de Heer,
D. M. Basko,
G. Martinez,
M. Potemski
Abstract:
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
△ Less
Submitted 23 January, 2011; v1 submitted 8 October, 2010;
originally announced October 2010.
-
Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Jacek Piechota
Abstract:
Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastabl…
▽ More
Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastable configurations exist: ABAB, AAAA, ABCA. In accordance to these, findings those three cases were considered theoretically, using Density Functional Theory calculations comparing graphene sheets, freestanding and positioned on the SiC(0001) substrate. The total energies were calculated, the most stable structure was identified and the electronic band structure was obtained. The four graphene layer electron band structure depends crucially on the stacking: for the ABAB and ABCA stacking, the bands, close to the K point, are characterized by the hyperbolic dispersion relation while the AA stacking the dispersion in this region is linear, similar to that of a single graphene layer. It was also shown that the linear dispersion relation is preserved in the presence of the SiC substrate, and also for different distances between adjacent carbon layers.
△ Less
Submitted 28 June, 2010; v1 submitted 5 June, 2010;
originally announced June 2010.
