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Non-Hermitian bonding and electronic reconfiguration of Ba$_2$ScNbO$_6$ and Ba$_2$LuNbO$_6$
Authors:
Yaorui Tan,
Maolin Bo
Abstract:
Despite the extensive applications of perovskite compounds, the precise nature of non-Hermitian bonding in these materials remains poorly understood. In this study, density functional theory calculations were performed to determine the electronic structures of perovskite compounds. In particular, the bandgaps of Ba$_2$ScNbO$_6$ and Ba$_2$LuNbO$_6$ were found to be 2.617 and 2.629 eV, respectively,…
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Despite the extensive applications of perovskite compounds, the precise nature of non-Hermitian bonding in these materials remains poorly understood. In this study, density functional theory calculations were performed to determine the electronic structures of perovskite compounds. In particular, the bandgaps of Ba$_2$ScNbO$_6$ and Ba$_2$LuNbO$_6$ were found to be 2.617 and 2.629 eV, respectively, and the deformation bond energies and non-Hermitian bonding of these compounds were calculated. The relationship between the non-Hermitian zeros of the O-Nb bond of Ba$_2$ScNbO$_6$ and the non-Hermitian zeros of the Sc-O bond was found to be similar but with varying sizes. Further, in-depth research on the non-Hermitian chemistry verified that precise control of atomic bonding and electron states can be achieved, providing new insights into the study of chemical bonds.
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Submitted 12 February, 2024;
originally announced February 2024.
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Spin fluctuations and charge properties of core shell C$_{80}$+M$_{13}$ (V, Mn, Cr, Ni, Co)
Authors:
Yixin Li,
Hongrong Qiu,
Maolin Bo
Abstract:
Transition metal clusters have a broad spectrum of potential applications in electronic and magnetic devices owing to their unique properties. Protective shells such as fullerene C$_{80}$ can be introduced to improve their stability. In this study, we optimized five core shell structures, C$_{80}$+M$_{13}$ (V, Mn, Cr, Ni, Co), and calculated their electromagnetic properties using density functiona…
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Transition metal clusters have a broad spectrum of potential applications in electronic and magnetic devices owing to their unique properties. Protective shells such as fullerene C$_{80}$ can be introduced to improve their stability. In this study, we optimized five core shell structures, C$_{80}$+M$_{13}$ (V, Mn, Cr, Ni, Co), and calculated their electromagnetic properties using density functional theory.We determined that there is electron transfer between C$_{80}$ and the transition metal clusters near the Fermi surface, and that the d orbitals contribute most to the magnetism of the structure. C$_{80}$+Ni$_{13}$ was antiferromagnetic. The magnetic properties of the clusters were significantly altered, revealing antiferromagnetism. The results establish a theoretical starting point for tuning the electronic and magnetic properties of 13-atom clusters embedded in fullerene cages.
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Submitted 11 September, 2023; v1 submitted 22 July, 2023;
originally announced July 2023.
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Electrostatic shielding effect and Binding energy shift of MoS2, MoSe2 and MoTe2 materials
Authors:
Yaorui Tan,
Maolin Bo
Abstract:
In this paper, the electronic structure and bond properties of MoS2, MoSe2 and MoTe2 are studied. Density functional theory (DFT) calculates combined with the binding energy and bond-charge (BBC) model to obtain electronic structure, binding energy shift and bond properties. It is found that electrostatic shielding by electron exchange is the main cause of density fluctuation. A method for calcula…
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In this paper, the electronic structure and bond properties of MoS2, MoSe2 and MoTe2 are studied. Density functional theory (DFT) calculates combined with the binding energy and bond-charge (BBC) model to obtain electronic structure, binding energy shift and bond properties. It is found that electrostatic shielding by electron exchange is the main cause of density fluctuation. A method for calculating the density of Green's function with energy level shift is established. It provides new methods and ideas for the further study of the binding energy, bond states and electronic properties of nanomaterials.
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Submitted 10 September, 2023; v1 submitted 16 July, 2023;
originally announced July 2023.
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Electrostatic shielding effect of ground state energy of metallic elements and non-metallic elements
Authors:
Maolin Bo,
Hanze Li,
Zhihong Wang,
Yunqian Zhong,
Yao Chuang,
ZhongKai Huang
Abstract:
The ground state energy is great importance for studying the properties of a material. In this study, we computed both the Hartree-Fock approximation and the random phase approximation of the ground state energy. Considering the effect of the electrostatic shielding potential, we utilized the Thomas-Fermi dielectric function to obtain the Thomas-Fermi formula for the total potential energy. We sub…
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The ground state energy is great importance for studying the properties of a material. In this study, we computed both the Hartree-Fock approximation and the random phase approximation of the ground state energy. Considering the effect of the electrostatic shielding potential, we utilized the Thomas-Fermi dielectric function to obtain the Thomas-Fermi formula for the total potential energy. We subsequently calculated the total potential energy of the metallic and non-metallic elements in the periodic table using Wigner correlation energy and Hedin-Lundqvist correlation energy, considering the changes in the correlation energies after considering electrostatic shielding effects.The exchange correlation potential including electrostatic shielding effect can be used in the measurement of SIM experiments.
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Submitted 4 April, 2023; v1 submitted 27 November, 2022;
originally announced November 2022.
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Topological Bonding and Electronic properties of Cd$_{43}$Te$_{28}$ semiconductor material with microporous structure
Authors:
Yixin Li,
Wei Xiong,
Lei Li,
Zhuoming Zhou,
Chuang Yao,
Zhongkai Huang,
Maolin Bo
Abstract:
CdTe is II-VI semiconductor material with excellent characteristics and has demonstrated promising potential for application in the photovoltaic field. The electronic properties of Cd43Te28 with microporous structures have been investigated based on density functional theory. The newly established binding-energy and bond-charge model have been used to convert the value of Hamiltonian into bonding…
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CdTe is II-VI semiconductor material with excellent characteristics and has demonstrated promising potential for application in the photovoltaic field. The electronic properties of Cd43Te28 with microporous structures have been investigated based on density functional theory. The newly established binding-energy and bond-charge model have been used to convert the value of Hamiltonian into bonding values. We provide a method for describing topological chemical bonds by atomic coordinates and wave phases. We also discuss the dynamic process of the wave function with time and the magic cube matrix. This study provides an innovative method and technology for the accurate analysis of the topological bonding and electronic properties of microporous semiconductor materials.
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Submitted 4 April, 2023; v1 submitted 26 November, 2022;
originally announced November 2022.
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Atomic bonding and electrical characteristics of metallic and semi-metallic elements
Authors:
Liang**g Ge,
Maolin Bo
Abstract:
In this paper, we use density functional theory to calculate the electronic structure and properties of 46 metallic and semi-metallic elements. The binding energy and bond charge model (BBC) model is combined with the tight binding and density functional tight binding approaches to obtain quantitative information about atomic bonding at the atomic scale and to understand the contributions and effe…
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In this paper, we use density functional theory to calculate the electronic structure and properties of 46 metallic and semi-metallic elements. The binding energy and bond charge model (BBC) model is combined with the tight binding and density functional tight binding approaches to obtain quantitative information about atomic bonding at the atomic scale and to understand the contributions and effects of deformation energy density, energy shifts, and atomic bonding on the Hamiltonian.
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Submitted 17 June, 2023; v1 submitted 13 April, 2022;
originally announced April 2022.
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Atomic bonding and electrical characteristics of two-dimensional graphene/boron nitride van der Waals heterostuctures with manufactured defects via binding energy and bond-charge model
Authors:
Jiannan Wang,
Liang**g Ge,
Anlin Deng,
Hongrong Qiu,
Hanze Li,
Yunhu Zhu,
Maolin Bo
Abstract:
We used the binding energy-bond-charge model to study the atomic bonding and electrical properties of the two-dimensional graphene/BN van der Waals heterostructure. We manipulated its atomic bonding and electrical properties by manufacturing defects. We discovered that this process yielded a band structure with a flat band, i.e., a horizontal band structure without dispersion at the Fermi level. T…
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We used the binding energy-bond-charge model to study the atomic bonding and electrical properties of the two-dimensional graphene/BN van der Waals heterostructure. We manipulated its atomic bonding and electrical properties by manufacturing defects. We discovered that this process yielded a band structure with a flat band, i.e., a horizontal band structure without dispersion at the Fermi level. Thus, our research is significant because it is the first report on this flat band of defect graphene/BN van der Waals heterostructures.
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Submitted 20 December, 2021; v1 submitted 15 December, 2021;
originally announced December 2021.
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Bond relaxation and electronic properties of T type WTe$_2$/MoS$_2$ heterostructure using BOLS BB and BC model
Authors:
Hongrong Qiu,
Hanze Li,
Jiannan Wang,
Yunhu Zhu,
Maolin Bo
Abstract:
We combined the bond order length strength and bond charge models and the topological concept to obtain the nonbonding, bonding, and antibonding states of the T type WTe$_2$/MoS$_2$ heterostructure.The energy band projection method and electronic information entropy are remarkable approaches for analyzing the electronic properties of various structures based on DFT calculations. This study provide…
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We combined the bond order length strength and bond charge models and the topological concept to obtain the nonbonding, bonding, and antibonding states of the T type WTe$_2$/MoS$_2$ heterostructure.The energy band projection method and electronic information entropy are remarkable approaches for analyzing the electronic properties of various structures based on DFT calculations. This study provides a new way to describe the electronic properties of T type heterostructures and calculate the electron and bonding state probabilities.
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Submitted 24 September, 2021; v1 submitted 4 August, 2021;
originally announced August 2021.
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Atomic bonding and binding energy of two-dimensional Bi/Li(110) heterojunctions via BOLS and BB model
Authors:
Maolin Bo,
Liang**g Ge,
Jibiao Li,
Lei Li,
Chuang Yao,
Zhongkai Huang
Abstract:
Combining the bond-order-length-strength (BOLS) and bonding and binding energy (BB) models with density functional theory (DFT) calculations, we studied the atomic bonding and binding energy behavior of Bi atoms adsorbed on the Li(110) surface. We found that the Bi atoms adsorbed on the Li(110) surface form two-dimensional (2D) geometric structures, including letter-, hexagon-, galaxy-, crown-, fi…
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Combining the bond-order-length-strength (BOLS) and bonding and binding energy (BB) models with density functional theory (DFT) calculations, we studied the atomic bonding and binding energy behavior of Bi atoms adsorbed on the Li(110) surface. We found that the Bi atoms adsorbed on the Li(110) surface form two-dimensional (2D) geometric structures, including letter-, hexagon-, galaxy-, crown-, field-, and cobweb-shaped structures. Thus, we obtained the following quantitative information: (i) the field-shaped structure can be considered the bulk structure; (ii) the field-shaped structure of Bi atom formation has a 5d energy level of 22.727 eV, and in the letter shape structure, this energy is shifted to values greater than 0.342 eV;and (iii) the Bi/Li(110) heterojunction transfers charge from the inner Li atomic layer to the outermost Bi atomic layer. In addition, we analyzed the bonding and electronic dynamics involved in the formation of the Bi/Li(110) heterojunctions using zone-selective electron spectroscopy technology. This work provides a theoretical reference for the fine tuning of binding energies and chemical bonding at the interfaces of 2D metallic materials.
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Submitted 21 August, 2021; v1 submitted 14 August, 2020;
originally announced August 2020.
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Bond Relaxation and Electronic Properties of Two-Dimensional Sb/MoSe2 and Sb/MoTe2 Van der Waals Heterostructures
Authors:
Maolin Bo,
Hanze Li,
Zhongkai Huang,
Lei Li,
Chuang Yao
Abstract:
Van der Waals heterostructures have recently garnered interest for application in high-performance photovoltaic materials. Consequently, understanding the basic electronic characteristics of these heterostructures is important for their utilisation in optoelectronic devices. The electronic structures and bond relaxation of two-dimensional (2D) Sb/transition metal disulfides (TMDs, MoSe2, and MoTe2…
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Van der Waals heterostructures have recently garnered interest for application in high-performance photovoltaic materials. Consequently, understanding the basic electronic characteristics of these heterostructures is important for their utilisation in optoelectronic devices. The electronic structures and bond relaxation of two-dimensional (2D) Sb/transition metal disulfides (TMDs, MoSe2, and MoTe2) van der Waals heterostructures were systematically studied using the bond-charge (BC) correlation and hybrid density functional theory. We found that the Sb/MoSe2 and Sb/MoTe2 heterostructures had indirect band gaps of 0.701 and 0.808 eV, respectively; further, these heterostructures effectively modulated the band gaps of MoSe2 (1.463 eV) and MoTe2 (1.173 eV). The BC correlation revealed four bonding and electronic contributions (electron-holes, antibonding, nonbonding, and bonding states) of the heterostructures. Our results provide an in-depth understanding of the Sb/TMD van der Waals heterojunction, which should be utilised to design 2D metal/semiconductor-based devices.
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Submitted 4 October, 2019;
originally announced October 2019.
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DFT-based energy shifts screening of Na$_x$K$_{55-x}$ alloy clusters
Authors:
**g Zhao,
Maolin Bo
Abstract:
Compositional effects in NaK alloy clusters have been studied using bond order length strength notation and density functional theory calculations. The results reveal binding energy shifts of the NaK alloy clusters under different elemental compositions. Atomic arrangements that can be used to predict the structures of stable experimental NaK alloys were also obtained. Our study of these alloy nan…
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Compositional effects in NaK alloy clusters have been studied using bond order length strength notation and density functional theory calculations. The results reveal binding energy shifts of the NaK alloy clusters under different elemental compositions. Atomic arrangements that can be used to predict the structures of stable experimental NaK alloys were also obtained. Our study of these alloy nanoclusters has uncovered a trend correlating atomic position and composition with binding energy. We believe this data will help in the experimental preparation of alloy nanoclusters.
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Submitted 6 August, 2019;
originally announced August 2019.
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Bond relaxation, electronic and magnetic behavior of 2D metals structures Y on Li(110) surface
Authors:
Maolin Bo,
Li Lei,
Chuang Yao,
Zhongkai Huang,
Cheng Peng,
Chang Q. Sun
Abstract:
We investigated the bond, electronic and magnetic behavior of adsorption Yttrium atoms on Lithium (110) surface using a combination of Bond-order-length-strength(BOLS) correlation and density-functional theory(DFT). We found that adsorption Y atoms on Li(110) surfaces form two-dimensional (2D) geometric structures of hexagon, nonagon, solid hexagonal, quadrangle and triangle. The consistent with t…
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We investigated the bond, electronic and magnetic behavior of adsorption Yttrium atoms on Lithium (110) surface using a combination of Bond-order-length-strength(BOLS) correlation and density-functional theory(DFT). We found that adsorption Y atoms on Li(110) surfaces form two-dimensional (2D) geometric structures of hexagon, nonagon, solid hexagonal, quadrangle and triangle. The consistent with the magnetic moment are 6.66μB, 5.54μB, 0.28μB, 1.04μB, 2.81μB, respectively. In addition, this work could pave the way for design new 2D metals electronic and magnetic properties.
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Submitted 22 August, 2018;
originally announced September 2018.
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Electronic structure and bond relaxation at Na/Ta(110) interfaces and 1D-chain and 2D-ring Ta metal structures on Na(110)
Authors:
Maolin Bo,
Li Lei,
Chuang Yao,
Cheng Peng,
Zhongkai Huang,
Chang Q. Sun
Abstract:
We investigated the mechanism of Na/Ta(110) and Ta/Na(110) interfaces using a combination of bond band barrier (BBB) and zone selective electron spectroscopy (ZES) correlation. We found that 7/9 ML and 8/9 ML Ta metal on a Na(110) surface form one dimensional (1D) chain and two dimensional (2D) ring structures, respectively. Moreover, we show that on Na(110), the Ta-induced Na(110) surface binding…
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We investigated the mechanism of Na/Ta(110) and Ta/Na(110) interfaces using a combination of bond band barrier (BBB) and zone selective electron spectroscopy (ZES) correlation. We found that 7/9 ML and 8/9 ML Ta metal on a Na(110) surface form one dimensional (1D) chain and two dimensional (2D) ring structures, respectively. Moreover, we show that on Na(110), the Ta-induced Na(110) surface binding energy (BE) shifts are dominated by quantum entrapment. On the contrary, on a Ta(110) surface, the Na-induced Ta(110) surface BE shifts are dominated by polarization. Thus, the BBB and ZES strategy could potentially be used for designing 1D and 2D metals with desired structures and properties.
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Submitted 8 August, 2018; v1 submitted 27 June, 2018;
originally announced June 2018.