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Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene
Authors:
Jake Dudley Mehew,
Rafael Luque Merino,
Hiroaki Ishizuka,
Alexander Block,
Jaime Díez Mérida,
Andrés Díez Carlón,
Kenji Watanabe,
Takashi Taniguchi,
Leonid S. Levitov,
Dmitri K. Efetov,
Klaas-Jan Tielrooij
Abstract:
Carrier relaxation measurements in moiré materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been…
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Carrier relaxation measurements in moiré materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been demonstrated experimentally. Here, we study the cooling of hot electrons in moiré graphene using time- and frequency-resolved photovoltage measurements as a direct probe of its complex energy pathways including electron-phonon coupling. We report on a dramatic speedup in hot carrier cooling of twisted bilayer graphene near the magic angle: the cooling time is a few picoseconds from room temperature down to 5 K, whereas in pristine graphene coupling to acoustic phonons takes nanoseconds. Our analysis indicates that this ultrafast cooling is a combined effect of the formation of a superlattice with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone, enabling Umklapp scattering that overcomes electron-phonon momentum mismatch. These results demonstrate a way to engineer electron-phonon coupling in twistronic systems, an approach that could contribute to the fundamental understanding of their transport properties and enable applications in thermal management and ultrafast photodetection.
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Submitted 31 January, 2023;
originally announced January 2023.
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A pre-time-zero spatiotemporal microscopy technique for the ultrasensitive determination of the thermal diffusivity of thin films
Authors:
Sebin Varghese,
Jake Dudley Mehew,
Alexander Block,
David Saleta Reig,
Paweł Woźniak,
Roberta Farris,
Zeila Zanolli,
Pablo Ordejón,
Matthieu J. Verstraete,
Niek F. van Hulst,
Klaas-Jan Tielrooij
Abstract:
Diffusion is one of the most ubiquitous transport phenomena in nature. Experimentally, it can be tracked by following point spreading in space and time. Here, we introduce a spatiotemporal pump-probe microscopy technique that exploits the residual spatial temperature profile obtained through the transient reflectivity when probe pulses arrive before pump pulses. This corresponds to an effective pu…
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Diffusion is one of the most ubiquitous transport phenomena in nature. Experimentally, it can be tracked by following point spreading in space and time. Here, we introduce a spatiotemporal pump-probe microscopy technique that exploits the residual spatial temperature profile obtained through the transient reflectivity when probe pulses arrive before pump pulses. This corresponds to an effective pump-probe time delay of 13 ns, determined by the repetition rate of our laser system (76 MHz). This pre-time-zero technique enables probing the diffusion of long-lived excitations created by previous pump pulses with nanometer accuracy, and is particularly powerful for following in-plane heat diffusion in thin films. In contrast to existing techniques for quantifying thermal transport it does not require any material input parameters or strong heating. We demonstrate the direct determination of the thermal diffusivities of the layered materials MoSe$_2$ (0.18 cm$^2$/s), WSe$_2$ (0.20 cm$^2$/s), MoS$_2$ (0.35 cm$^2$/s), and WS$_2$ (0.59 cm$^2$/s). This technique paves the way for observing novel nanoscale thermal transport phenomena and tracking diffusion of a broad range of species.
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Submitted 10 November, 2022; v1 submitted 9 November, 2022;
originally announced November 2022.
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Milliwatt terahertz harmonic generation from topological insulator metamaterials
Authors:
Klaas-Jan Tielrooij,
Alessandro Principi,
David Saleta Reig,
Alexander Block,
Sebin Varghese,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira,
Min Chen,
Jan-Christoph Deinert,
Carmen Gomez Carbonell,
Sergio O. Valenzuela,
Laurens W. Molenkamp,
Tobias Kiessling,
Georgy V. Astakhov,
Sergey Kovalev
Abstract:
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at…
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Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.
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Submitted 1 November, 2022;
originally announced November 2022.
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Unraveling heat transport and dissipation in suspended MoSe$_2$ crystals from bulk to monolayer
Authors:
D. Saleta Reig,
S. Varghese,
R. Farris,
A. Block,
J. D. Mehew,
O. Hellman,
P. Woźniak,
M. Sledzinska,
A. El Sachat,
E. Chávez-Ángel,
S. O. Valenzuela,
N. F. Van Hulst,
P. Ordejón,
Z. Zanolli,
C. M. Sotomayor Torres,
M. J. Verstraete,
K. J. Tielrooij
Abstract:
Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative…
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Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative TMD MoSe$_2$, focusing on the effect of material thickness and the material's environment. We use Raman thermometry measurements on suspended crystals, where we identify and eliminate crucial artefacts, and perform $ab$ $initio$ simulations with phonons at finite, rather than zero, temperature. We find that phonon dispersions and lifetimes change strongly with thickness, yet (sub)nanometer thin TMD films exhibit a similar in-plane thermal conductivity ($\sim$20~Wm$^{-1}$K$^{-1}$) as bulk crystals ($\sim$40~Wm$^{-1}$K$^{-1}$). This is the result of compensating phonon contributions, in particular low-frequency modes with a surprisingly long mean free path of several micrometers that contribute significantly to thermal transport for monolayers. We furthermore demonstrate that out-of-plane heat dissipation to air is remarkably efficient, in particular for the thinnest crystals. These results are crucial for the design of TMD-based applications in thermal management, thermoelectrics and (opto)electronics.
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Submitted 19 September, 2021;
originally announced September 2021.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
**can Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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Observation of giant and tuneable thermal diffusivity of Dirac fluid at room temperature
Authors:
Alexander Block,
Alessandro Principi,
Niels C. H. Hesp,
Aron W. Cummings,
Matz Liebel,
Kenji Watanabe,
Takashi Taniguchi,
Stephan Roche,
Frank H. L. Koppens,
Niek F. van Hulst,
Klaas-Jan Tielrooij
Abstract:
Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene i…
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Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene in the diffusive and hydrodynamic regimes, and report a controllable transition to the Dirac-fluid regime at room temperature, using carrier temperature and carrier density as control knobs. We introduce the technique of spatiotemporal thermoelectric microscopy with femtosecond temporal and nanometre spatial resolution, which allows for tracking electronic heat spreading. In the diffusive regime, we find a thermal diffusivity of $\sim$2,000 cm$^2$/s, consistent with charge transport. Remarkably, during the hydrodynamic time window before momentum relaxation, we observe heat spreading corresponding to a giant diffusivity up to 70,000 cm$^2$/Vs, indicative of a Dirac fluid. These results are promising for applications such as nanoscale thermal management.
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Submitted 28 December, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.