Showing 1–50 of 56 results for author: Blick, R

A hybrid graphene-siliconnitride nanomembrane as a versatile and ultra-widely tunable mechanical device

Authors: Mengqi Fu, Bojan Bošnjak, Zhan Shi, Jannik Dornseiff, Robert H. Blick, Elke Scheer, Fan Yang

Abstract: Integration of 2D materials in nanoelectromechanical systems (NEMS) marries the robustness of silicon-based materials with exceptional electrical controllability in 2D materials, drastically enhancing system performance which now is the key for many advanced applications in nanotechnology. Here, we experimentally demonstrate and theoretically analyze a powerful on-chip graphene integrated NEMS dev… ▽ More Integration of 2D materials in nanoelectromechanical systems (NEMS) marries the robustness of silicon-based materials with exceptional electrical controllability in 2D materials, drastically enhancing system performance which now is the key for many advanced applications in nanotechnology. Here, we experimentally demonstrate and theoretically analyze a powerful on-chip graphene integrated NEMS device consisting of a hybrid graphene/silicon-nitride membrane with metallic leads that enables an extremely large static and dynamic parameter regulation. When a static voltage is applied to the leads, the force induced by the thermal expansion difference between the leads and the membrane results in ultra-wide frequency tuning, deformation (post-buckling transition) and regulation of mechanical properties. Moreover, by injecting an alternating voltage to the leads, we can excite the resonator vibrating even far beyond its linear regime without a complex and space consuming actuation system. Our results prove that the device is a compact integrated system possessing mechanical robustness, high controllability, and fast response. It not only expands the limit of the application range of NEMS devices but also pushes multidimensional nanomechanical resonators into working in the nonlinear regime. △ Less

Submitted 23 June, 2024; v1 submitted 17 June, 2024; originally announced June 2024.

Addressing the spin-valley flavors in moir'e mini-bands of MoS2

Authors: Chithra H. Sharma, Marta Prada, Jan-Hendrik Schmidt, Isabel Gonz'alez D'iaz-Palacio, Tobias Stauber, Takashi Taniguchi, Kenji Watanabe, Lars Tiemann, Robert H. Blick

Abstract: The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These systems exhibit a rich phase diagram of novel physical phenomena and exotic correlated phases that emerge in the low-dispersing bands. Transition metal dichalcogenides, in particular, molybdenum disulfide (MoS2), are potent… ▽ More The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These systems exhibit a rich phase diagram of novel physical phenomena and exotic correlated phases that emerge in the low-dispersing bands. Transition metal dichalcogenides, in particular, molybdenum disulfide (MoS2), are potential candidates to extend the studies on moir'e electronics beyond graphene. Our transport spectroscopy measurements and analysis reveal a correlation-driven phase transition and the emergence of discrete mini-bands in MoS2 moir'e superlattices that remained elusive so far. We resolve these mini-bands arising from quantum mechanical tunneling through Schottky barriers between the MoS2 and its metallic leads. Energy scales deduced from a first approach exhibit an astounding agreement with our experimental observations. The behavior under thermal activation suggests a Lifshitz phase transition at low temperatures that is driven by a complete spin-valley symmetry breaking. These intriguing observations bring out the potential of twisted MoS2 to explore correlated electron states and associated physics. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comment on "Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene"

Authors: Lars Tiemann, Marta Prada, Vincent Strenzke, Robert H. Blick

Abstract: This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated structure of magic angle bilayer graphene. However, identical resonance features have already been reported in previous works on mono- and few-layer graphene, v… ▽ More This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated structure of magic angle bilayer graphene. However, identical resonance features have already been reported in previous works on mono- and few-layer graphene, voiding their theoretical framework. A straight forward theoretical picture within the single-particle topologically non-trivial band structure of graphene delivers satisfactory explanations for the observation of the resonant features and applies as well to the data presented by Morissette {\it et al.}. However, this intuitive picture has been disregarded by the authors. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 3 pages, 1 figure

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

Authors: Vincent Strenzke, Jana M. Meyer, Isabell Grandt-Ionita, Marta Prada, Hyun-Seok Kim, Martin Heilmann, Joao Marcelo J. Lopes, Lars Tiemann, Robert H. Blick

Abstract: The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to s… ▽ More The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Comments: 5 figures, 21 pages

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Authors: Pai Zhao, Chithra H. Sharma, Renrong Liang, Christian Glasenapp, Lev Mourokh, Vadim M. Kovalev, Patrick Huber, Marta Prada, Lars Tiemann, Robert H. Blick

Abstract: Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wav… ▽ More Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transversal potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploit of gauge fields in large planar graphene systems. △ Less

Submitted 7 July, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. Lett. 128, 256601 (2022)

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Authors: Chithra H. Sharma, Pai Zhao, Lars Tiemann, Marta Prada, Arti Dangwal Pandey, Andreas Stierle, Robert. H. Blick

Abstract: Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are perform… ▽ More Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions. △ Less

Submitted 7 March, 2022; v1 submitted 31 October, 2021; originally announced November 2021.

Journal ref: AIP Advances 12, 035111 (2022)

Mechanically Modulated Sideband and Squeezing Effects of Membrane Resonators

Authors: Fan Yang, Mengqi Fu, Bojan Bosnjak, Robert H. Blick, Yuxuan Jiang, Elke Scheer

Abstract: We investigate the sideband spectra of a driven nonlinear mode with its eigenfrequency being modulated at a low frequency (< 1 kHz). This additional parametric modulation leads to prominent antiresonance lineshapes in the sideband spectra, which can be controlled through the vibration state of the driven mode. We also establish a direct connection between the antiresonance frequency and the squeez… ▽ More We investigate the sideband spectra of a driven nonlinear mode with its eigenfrequency being modulated at a low frequency (< 1 kHz). This additional parametric modulation leads to prominent antiresonance lineshapes in the sideband spectra, which can be controlled through the vibration state of the driven mode. We also establish a direct connection between the antiresonance frequency and the squeezing of thermal fluctuation in the system. Our work not only provides a simple and robust method for squeezing characterization but also opens a new possibility toward sideband applications. △ Less

Submitted 21 July, 2021; originally announced July 2021.

Journal ref: PhysRevLett.127.184301 (2021)

Dirac imprints on the $g$-factor anisotropy in graphene

Authors: Marta Prada, Lars Tiemann, Jonas Sichau, Robert H Blick

Abstract: Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We resolve experimentally the $g$-factor along the three orthogonal directions in a large-scale graphene sample. We employ a Hall bar structure with an e… ▽ More Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We resolve experimentally the $g$-factor along the three orthogonal directions in a large-scale graphene sample. We employ a Hall bar structure with an external magnetic field of arbitrary direction, and extract the effective $g$-tensor via resistively-detected electron spin resonance. We employ a theoretical perturbative approach to identify the intrinsic and extrinsic spin orbit coupling and obtain a fundamental parameter inherent to the atomic structure of $^{12}$C, commonly used in ab-initio models. △ Less

Submitted 11 December, 2020; originally announced December 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, 075401 (2021)

Polarization amplification by spin-do** in nanomagnetic/graphene hybrid systems

Authors: Tim Anlauf, Marta Prada, Stefan Freercks, Bojan Bosnjak, Robert Frömter, Jonas Sichau, Hans Peter Oepen, Lars Tiemann, Robert H. Blick

Abstract: The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in monolayer graphene via carrier exchange. We probed the spin polarization through a resistively-detected variant of electron spin resonance (ESR) and observed resonance… ▽ More The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in monolayer graphene via carrier exchange. We probed the spin polarization through a resistively-detected variant of electron spin resonance (ESR) and observed resonance amplification mediated by the presence of the nanodots. Each nanodot locally injects a surplus of spin-polarized carriers into the graphene, and the ensemble of all "spin hot spots" generates a non-equilibrium electron spin polarization in the graphene layer at macroscopic lengths. This occurs whenever the interdot distance is comparable or smaller than the spin diffusion length. △ Less

Submitted 7 February, 2021; v1 submitted 20 August, 2020; originally announced August 2020.

Comments: Title of original submission "A nanomagnetic polarization amplifier for graphene" was changed

Journal ref: Phys. Rev. Materials 5, 034006 (2021)

Sublattice symmetry breaking and ultra low energy excitations in Graphene-on-hBN Heterostructures

Authors: U. R. Singh, M. Prada, V. Strenzke, B. Bosnjak, T. Schmirander, L. Tiemann, R. H. Blick

Abstract: The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of the terms involved (few tens of ueV). These low energy terms include sublattice splitting, the Rashba and the intrinsic spin-orbit coupling, whose balance determ… ▽ More The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of the terms involved (few tens of ueV). These low energy terms include sublattice splitting, the Rashba and the intrinsic spin-orbit coupling, whose balance determines the topological properties. In this work, we unravel the contributions arising from the sublattice and the intrinsic spin orbit splitting in graphene on hexagonal boron-nitride. Employing resistively-detected electron spin resonance, we measure a sublattice splitting of the order of 20E-6 eV, and confirm an intrinsic spin orbit coupling of approximately 45E-6 eV. The dominance of the latter suggests a topologically non-trivial state, involving fascinating properties. Electron spin resonance is a promising route towards unveiling the intriguing band structure at low energy scales. △ Less

Submitted 7 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 245134 (2020)

Acoustically driven Dirac electrons in monolayer graphene

Authors: Pai Zhao, Lars Tiemann, Hoc Khiem Trieu, Robert H. Blick

Abstract: We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric curren… ▽ More We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric current, we characterize the frequency domains of the transducer from its first to the third harmonic. We find an oscillatory attenuation of the SAW velocity depending on the conductivity of the graphene layer. The acousto-electric current reveals additional fine structure that is absent in pure magnetotransport. In addition we find a shift between the acousto-electric longitudinal voltage and the velocity change of the SAW. We attribute this shift to the periodic strain field from the propagating SAW that slightly modifies the Dirac cone. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene

Authors: Jonas Sichau, Marta Prada, Timothy J. Lyon, Bojan Bosnjak, Tim Anlauf, Lars Tiemann, Robert H. Blick

Abstract: In 2005 Kane & Mele[C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)], predicted that at sufficiently low energy, graphene exhibits a topological state of matter with an energy gap generated by the atomic spin-orbit interaction. However, this intrinsic gap has not been measured to this date. In this letter, we exploit the chirality of the low energy states to resolve this gap. We prob… ▽ More In 2005 Kane & Mele[C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)], predicted that at sufficiently low energy, graphene exhibits a topological state of matter with an energy gap generated by the atomic spin-orbit interaction. However, this intrinsic gap has not been measured to this date. In this letter, we exploit the chirality of the low energy states to resolve this gap. We probe the spin states experimentally, by employing low temperature microwave excitation in a resistively detected electron spin resonance on graphene. The structure of the topological bands is reflected in our transport experiments, where our numerical models allow us to identify the resonance signatures. We determine the intrinsic spin-orbit bulk gap to be exactly 42.2 μeV. Electron-spin resonance experiments can reveal the competition between the intrinsic spin-orbit coupling and classical Zeeman energy that arises at low magnetic fields and demonstrate that graphene remains to be a material with surprising properties. △ Less

Submitted 13 September, 2018; v1 submitted 17 September, 2017; originally announced September 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 122, 046403 (2019)

Probing Electron Spin Resonance in Monolayer Graphene

Authors: Timothy J. Lyon, Jonas Sichau, August Dorn, Alba Centeno, Amaia Pesquera, Amaia Zurutuza, Robert H. Blick

Abstract: The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility. The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility. △ Less

Submitted 26 November, 2016; originally announced November 2016.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 119, 066802 (2017)

Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

Authors: Timothy J. Lyon, Jonas Sichau, August Dorn, Amaia Zurutuza, Amaia Pesquera, Alba Centeno, Robert H. Blick

Abstract: We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observatio… ▽ More We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis. △ Less

Submitted 16 March, 2017; v1 submitted 18 November, 2016; originally announced November 2016.

Comments: 5 pages, 5 figures. Revision includes updated title, figures updated with extra labels and to be compatible with black and white printing, and various minor edits. Added publication information

Journal ref: Appl. Phys. Lett. 110(11):113502 (2017)

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

Authors: Cornelius S. Bausch, Aune Koitmäe, Eric Stava, Amanda Price, Pedro J. Resto, Yu Huang, David Sonnenberg, Yuliya Stark, Christian Heyn, Justin C. Williams, Erik W. Dent, Robert H. Blick

Abstract: We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the a… ▽ More We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells. △ Less

Submitted 6 May, 2013; originally announced May 2013.

Comments: 3 pages, 4 figures

Coulomb Blockade in a Coupled Nanomechanical Electron Shuttle

Authors: Chulki Kim, Marta Prada, Robert H. Blick

Abstract: We demonstrate single electron shuttling through two coupled nanomechanical pendula. The pendula are realized as nanopillars etched out of the semiconductor substrate. Coulomb blockade is found at room temperature, allowing metrological applications. By controlling the mechanical shuttling frequency we are able to validate the different regimes of electron shuttling. We demonstrate single electron shuttling through two coupled nanomechanical pendula. The pendula are realized as nanopillars etched out of the semiconductor substrate. Coulomb blockade is found at room temperature, allowing metrological applications. By controlling the mechanical shuttling frequency we are able to validate the different regimes of electron shuttling. △ Less

Submitted 19 April, 2012; v1 submitted 10 May, 2011; originally announced May 2011.

Journal ref: ACS Nano, 6 (1), pp 651-655 (Jan. 2012)

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, L. J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, Robert Joynt, Robert Blick, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when… ▽ More We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed. △ Less

Submitted 5 April, 2011; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: published version, 18 pages

Journal ref: Phys. Rev. B 82, 245312 (2010)

Spontaneous Symmetry Breaking in Two Coupled Nanomechanical Electron Shuttles

Authors: Chulki Kim, Jonghoo Park, Robert H. Blick

Abstract: We present spontaneous symmetry breaking in a nanoscale version of a setup prolific in classical mechanics: two coupled nanomechanical pendulums. The two pendulums are electron shuttles fabricated as nanopillars and placed between two capacitor plates in a homogeneous electric field. Instead of being mechanically coupled through a spring they exchange electrons, i.e. they shuttle electrons from th… ▽ More We present spontaneous symmetry breaking in a nanoscale version of a setup prolific in classical mechanics: two coupled nanomechanical pendulums. The two pendulums are electron shuttles fabricated as nanopillars and placed between two capacitor plates in a homogeneous electric field. Instead of being mechanically coupled through a spring they exchange electrons, i.e. they shuttle electrons from the source to the drain 'capacitor plate'. Nonzero DC current through this system by external AC excitation is caused via dynamical symmetry breaking. This symmetry-broken current appears at sub- and superharmonics of the fundamental mode of the coupled system. △ Less

Submitted 12 April, 2010; originally announced April 2010.

Spin Relaxation in Isotopically Purified Silicon Quantum Dots

Authors: M. Prada, R. H. Blick, R. Joynt

Abstract: We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isot… ▽ More We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isotope $^{29}$Si concentration for which this mechanism become dominant. △ Less

Submitted 17 April, 2009; originally announced April 2009.

Comments: 5 pages

Magnetotransport in non-planar SiGe/Si nanomembranes

Authors: G. J. Meyer, N. L. Dias, R. H. Blick, I. Knezevic

Abstract: We investigate the relationship between electronics and geometry in a nonplanar SiGe/Si resonant quantum cavity (RQC) subject to a magnetic field. The transfer matrix technique originally due to Usuki and coworkers (Phys. Rev. B 52, 8244 1995) has been modified to account for the nonzero local curvature of the RQC. Our results demonstrate that low-temperature ballistic magnetoconductance in nonp… ▽ More We investigate the relationship between electronics and geometry in a nonplanar SiGe/Si resonant quantum cavity (RQC) subject to a magnetic field. The transfer matrix technique originally due to Usuki and coworkers (Phys. Rev. B 52, 8244 1995) has been modified to account for the nonzero local curvature of the RQC. Our results demonstrate that low-temperature ballistic magnetoconductance in nonplanar RQCs is highly sensitive to the changes in curvature for a wide range of magnetic field strengths. △ Less

Submitted 26 June, 2008; originally announced June 2008.

Journal ref: IEEE Trans. Nanotech. 6, 446 (2007)

Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots

Authors: M. Prada, R. H. Blick, R. Joynt

Abstract: We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the… ▽ More We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the plane of the dot, the spin-orbit coupling is important and virtual states are not required. We find that there can be strong anisotropy for different field directions: parallel magnetic field can increase substantially the relaxation time due to Zeeman splitting, but when the magnetic field is applied perpendicular to the plane, the enhancement of the spin-orbit effect shortens the relaxation time. We find the relaxation to be orders of magnitude longer than for GaAs quantum dots, due to weaker hyperfine and spin-orbit effects. △ Less

Submitted 31 January, 2008; originally announced January 2008.

Comments: 5 pages, 3 figures

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Authors: C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single… ▽ More Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot. △ Less

Submitted 1 November, 2007; v1 submitted 19 October, 2007; originally announced October 2007.

Comments: 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

Journal ref: Appl Phys Lett (2007) vol. 91 pp. 213103

Radio-Frequency Rectification on Membrane Bound Pores

Authors: Sujatha Ramachandran, Robert H. Blick, Daniel W. van der Weide

Abstract: We present measurements on direct radio-frequency pum** of ion channels and pores bound in bilipid membranes. We make use of newly developed microcoaxes, which allow delivering the high frequency signal in close proximity to the membrane bound proteins and ion channels. We find rectification of the radio-frequency signal, which is used to pump ions through the channels and pores. We present measurements on direct radio-frequency pum** of ion channels and pores bound in bilipid membranes. We make use of newly developed microcoaxes, which allow delivering the high frequency signal in close proximity to the membrane bound proteins and ion channels. We find rectification of the radio-frequency signal, which is used to pump ions through the channels and pores. △ Less

Submitted 12 September, 2007; originally announced September 2007.

Comments: 18 pages, 4 figures

Direct mechanical mixing in a nanoelectromechanical diode

Authors: Hyun S. Kim, Hua Qin, Robert H. Blick

Abstract: We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10-1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm, placed between two electrodes in an impedance matched coplanar wave guide. We find a non-linear IV-characteristic, which enables ra… ▽ More We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10-1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm, placed between two electrodes in an impedance matched coplanar wave guide. We find a non-linear IV-characteristic, which enables radio frequency mixing of two electromagnetic signals via the nanomechanical transistor. Potential applications for this mixer are ultrasensitive displacement detection or signal processing in communication electronic circuits requiring high-throughput insulation. △ Less

Submitted 16 October, 2007; v1 submitted 12 September, 2007; originally announced September 2007.

Comments: 3 pages, 4 figures. This article has been published by Applied Physics Letters. You can find this article online at http://apl.aip.org in Oct. 2007

Sub-Threshold Field Emission from Thin Silicon Membranes

Authors: Hua Qin, Hyun-Seok Kim, Michael S. Westphall, Lloyd M. Smith, Robert H. Blick

Abstract: We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A sub-threshold electric field applied on the emission side of the membrane enhances the number of electrons emitted by two orders of magnitude. This enhancement stems from field emitted electrons stimulated by the incident partic… ▽ More We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A sub-threshold electric field applied on the emission side of the membrane enhances the number of electrons emitted by two orders of magnitude. This enhancement stems from field emitted electrons stimulated by the incident particles, which suggests that stacks of silicon membranes can form ultra-sensitive electron multipliers. △ Less

Submitted 27 August, 2007; originally announced August 2007.

Comments: 4 pages, 3 figures, submit to Appl. phys. Lett. (2007)

Nanopillar Arrays on Semiconductor Membranes as Electron Emission Amplifiers

Authors: Hua Qin, Hyun-Seok Kim, Robert H. Blick

Abstract: A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane system from the flat surface of the membrane, while electron emission from the other side is probed by an anode. The seconda… ▽ More A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane system from the flat surface of the membrane, while electron emission from the other side is probed by an anode. The secondary electron yield (SEY) from nanopillars is found to be about 1.8 times that of plane silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of nanopillars and membrane and application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in nanopillar-membrane system excited by incident particles or radiation. △ Less

Submitted 18 August, 2007; originally announced August 2007.

Comments: 4 figures

Shock Waves in Nanomechanical Resonators

Authors: Florian W. Beil, Achim Wixforth, Werner Wegscheider, Dieter Schuh, Max Bichler, Robert H. Blick

Abstract: The dream of every surfer is an extremely steep wave propagating at the highest speed possible. The best waves for this would be shock waves, but are very hard to surf. In the nanoscopic world the same is true: the surfers in this case are electrons riding through nanomechanical devices on acoustic waves [1]. Naturally, this has a broad range of applications in sensor technology and for communic… ▽ More The dream of every surfer is an extremely steep wave propagating at the highest speed possible. The best waves for this would be shock waves, but are very hard to surf. In the nanoscopic world the same is true: the surfers in this case are electrons riding through nanomechanical devices on acoustic waves [1]. Naturally, this has a broad range of applications in sensor technology and for communication electronics for which the combination of an electronic and a mechanical degree of freedom is essential. But this is also of interest for fundamental aspects of nano-electromechanical systems (NEMS), when it comes to quantum limited displacement detection [2] and the control of phonon number states [3]. Here, we study the formation of shock waves in a NEMS resonator with an embedded two-dimensional electron gas using surface acoustic waves. The mechanical displacement of the nano-resonator is read out via the induced acoustoelectric current. Applying acoustical standing waves we are able to determine the anomalous acoustocurrent. This current is only found in the regime of shock wave formation. We ontain very good agreement with model calculations. △ Less

Submitted 14 August, 2007; originally announced August 2007.

Comments: 14 Pages including 4 figures

Self Excitation of Nano-Mechanical Pillars

Authors: Hyun S. Kim, Hua Qin, Robert H. Blick

Abstract: Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good example are the overall visible wind farm turbines [2]. In other words, a static force, like wind acting on the rotor blades, can generate a resonant excitatio… ▽ More Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good example are the overall visible wind farm turbines [2]. In other words, a static force, like wind acting on the rotor blades, can generate a resonant excitation at a certain mechanical frequency. For nanomechanical systems [3,4,5] such a self excitation (SE) mechanism is highly desirable as well, since it can generate mechanical oscillations at radio frequencies by simply applying a DC bias voltage. This is of great importance for low-power signal communication devices and detectors, as well as for mechanical computing elements. For a particular nanomechanical system - the single electron shuttle - this effect was predicted some time ago by Gorelik et al. [6]. Here, we use a nano-electromechanical single electron transistor (NEMSET) to demonstrate self excitation for both the soft and hard regime, respectively. The ability to use self excitation in nanomechanical systems may enable the detection of quantum mechanical backaction effects [7] in direct tunneling, macroscopic quantum tunneling [8], and rectification [9]. All these effects have so far been over shadowed by the large driving voltages, which had to be applied. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Comments: 19 pages including 4 figures

Doped Nano-Electromechanical Systems

Authors: Dominik V. Scheible, Hua Qin, Hyun-Seok Kim, Robert H. Blick

Abstract: We present a new generation of nano-electromechanical systems (NEMS), which are realized by do** the semiconductor base material. In contrast to the traditional approach these doped NEMS (D-NEMS) do not require a metallization layer. This makes them far lighter and hence increases resonance frequency and quality factor. Additionally, D-NEMS can be tuned from the conductive state into an insula… ▽ More We present a new generation of nano-electromechanical systems (NEMS), which are realized by do** the semiconductor base material. In contrast to the traditional approach these doped NEMS (D-NEMS) do not require a metallization layer. This makes them far lighter and hence increases resonance frequency and quality factor. Additionally, D-NEMS can be tuned from the conductive state into an insulating one. This will enable a host of new device designs, like mechanically tunable pin-junctions and nanomechanical single electron switches. We demonstrate D-NEMS fabrication and operation from the intrinsic, to the light, and to the heavy regime of do**. △ Less

Submitted 9 August, 2007; originally announced August 2007.

Comments: 4 pages, 4 figures

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Authors: Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson

Abstract: Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in… ▽ More Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics. △ Less

Submitted 11 December, 2008; v1 submitted 6 August, 2007; originally announced August 2007.

Comments: Published version. Supplementary Information in appendices

Journal ref: Nature Physics v4, pp540-544 (2008)

Jahn-Teller / Kondo Interplay in a Three-Terminal Quantum Dot

Authors: Ryan C. Toonen, Hua Qin, Andreas K. Huettel, Srijit Goswami, Daniel W. van der Weide, Karl Eberl, Robert H. Blick

Abstract: In quantum dot circuits, screening electron clouds in strongly-coupled leads will hybridize with the states of the artificial atom. Using a three-terminal geometry, we directly probe the atomic structure of a quantum dot with Kondo coupling. Our measurements reveal that this hybrid system behaves as a non-linear entity with orbital degeneracy. Geometric distortion reduces the symmetry, lowers th… ▽ More In quantum dot circuits, screening electron clouds in strongly-coupled leads will hybridize with the states of the artificial atom. Using a three-terminal geometry, we directly probe the atomic structure of a quantum dot with Kondo coupling. Our measurements reveal that this hybrid system behaves as a non-linear entity with orbital degeneracy. Geometric distortion reduces the symmetry, lowers the energy, and lifts the degeneracy--the Jahn-Teller effect. △ Less

Submitted 26 September, 2006; v1 submitted 11 December, 2005; originally announced December 2005.

Comments: 4 pages, 4 figures

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

Authors: K A Slinker, K L M Lewis, C C Haselby, S Goswami, L J Klein, J O Chu, S N Coppersmith, Robert Joynt, R H Blick, Mark Friesen, M A Eriksson

Abstract: We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the t… ▽ More We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied. △ Less

Submitted 16 August, 2005; v1 submitted 3 August, 2005; originally announced August 2005.

Comments: New Fig. 1, submitted to New Journal of Physics

Journal ref: New Journal of Physics v7, p246 (2005)

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

Authors: L. J. Klein, K. L. M. Lewis, K. A. Slinker, Srijit Goswami, D. W. van der Weide, R. H. Blick, P. M. Mooney, J. O. Chu, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson

Abstract: The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in… ▽ More The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication. △ Less

Submitted 31 March, 2005; originally announced March 2005.

Comments: 7 pages, 10 figures

Journal ref: Journal of Applied Physics v99, p023509 (2006)

Periodic Field Emission from an Isolated Nano-Scale Electron Island

Authors: D. V. Scheible, C. Weiss, J. P. Kotthaus, R. H. Blick

Abstract: We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation repro… ▽ More We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation reproduces the experimental data and shows deviation from the Fowler-Nordheim description due to the island's electric isolation. △ Less

Submitted 10 September, 2004; originally announced September 2004.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 93, 186801 (2004)

Observation of single defect relaxation in a freely suspended nano resonator

Authors: Florian W. Beil, Robert H. Blick, Achim Wixforth, Werner Wegscheider, Dieter Schuh, Max Bichler

Abstract: Relaxation of single defects in a nanometer sized resonator is observed by coupling surface acoustic waves to a freely suspended beam. The surface waves act on the resonator as driving forces being able to modify the internal friction in the beam. In analogy to classical experiments on internal friction in macroscopic samples, we perform frequency, amplitude, and temperature dependent experiment… ▽ More Relaxation of single defects in a nanometer sized resonator is observed by coupling surface acoustic waves to a freely suspended beam. The surface waves act on the resonator as driving forces being able to modify the internal friction in the beam. In analogy to classical experiments on internal friction in macroscopic samples, we perform frequency, amplitude, and temperature dependent experiments on the nano resonator and find a scenario which is consistent with the observation of single defect relaxation. △ Less

Submitted 2 June, 2004; originally announced June 2004.

Comments: 5 pages, 4 figures

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul… ▽ More We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. △ Less

Submitted 20 April, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: Typos corrected; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. v84, p4047 (2004)

Pseudo-spin Kondo effect versus hybridized molecular states in parallel Double Quantum Dots

Authors: A. W. Holleitner, A. Chudnovskiy, D. Pfannkuche, K. Eberl, R. H. Blick

Abstract: A two quantum-dot device is coupled in parallel for studying the competition between the pseudo-spin Kondo effect and strongly hybridized molecular states. Cryogenic measurements are performed in the regime of weak coupling of the two dots to lead states under linear transport conditions. Detailed simulations verify the finding of the transition between the two different regimes. A two quantum-dot device is coupled in parallel for studying the competition between the pseudo-spin Kondo effect and strongly hybridized molecular states. Cryogenic measurements are performed in the regime of weak coupling of the two dots to lead states under linear transport conditions. Detailed simulations verify the finding of the transition between the two different regimes. △ Less

Submitted 3 November, 2003; originally announced November 2003.

Comments: 14 pages, 3 figures

Nuclear spin relaxation probed by a single quantum dot

Authors: A. K. Huettel, J. Weber, A. W. Holleitner, D. Weinmann, K. Eberl, R. H. Blick

Abstract: We present measurements on nuclear spin relaxation probed by a single quantum dot in a high-mobility electron gas. Current passing through the dot leads to a spin transfer from the electronic to the nuclear spin system. Applying electron spin resonance the transfer mechanism can directly be tuned. Additionally, the dependence of nuclear spin relaxation on the dot gate voltage is observed. We fin… ▽ More We present measurements on nuclear spin relaxation probed by a single quantum dot in a high-mobility electron gas. Current passing through the dot leads to a spin transfer from the electronic to the nuclear spin system. Applying electron spin resonance the transfer mechanism can directly be tuned. Additionally, the dependence of nuclear spin relaxation on the dot gate voltage is observed. We find electron-nuclear relaxation times of the order of 10 minutes. △ Less

Submitted 13 August, 2003; originally announced August 2003.

Journal ref: Physical Review B 69, 073302 (2004)

On geometric potentials in nanomechanical circuits

Authors: Alexander V. Chaplik, Robert H. Blick

Abstract: We demonstrate the formation of confinement potentials in suspended nanostructures induced by the geometry of the devices. We then propose a setup for measuring the resulting geometric phase change of electronic wave functions in such a mechanical nanostructure. The device consists of a suspended loop through which a phase coherent current is driven. Combination of two and more geometrically ind… ▽ More We demonstrate the formation of confinement potentials in suspended nanostructures induced by the geometry of the devices. We then propose a setup for measuring the resulting geometric phase change of electronic wave functions in such a mechanical nanostructure. The device consists of a suspended loop through which a phase coherent current is driven. Combination of two and more geometrically induced potentials can be applied for creating mechanical quantum bit states. △ Less

Submitted 4 August, 2003; originally announced August 2003.

Single electron-phonon interaction in a suspended quantum dot phonon cavity

Authors: E. M. Höhberger, R. H. Blick, T. Brandes, J. Kirschbaum, W. Wegscheider, M. Bichler, J. P. Kotthaus

Abstract: An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode co… ▽ More An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy. △ Less

Submitted 6 April, 2003; originally announced April 2003.

Comments: 4 pages, 4 figures

Spin blockade in ground state resonance of a quantum dot

Authors: A. K. Huettel, H. Qin, A. W. Holleitner, R. H. Blick, K. Neumaier, D. Weinmann, K. Eberl, J. P. Kotthaus

Abstract: We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We s… ▽ More We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We support this by probing the bias, magnetic field and temperature dependence of the transport spectrum. Weak violation of the blockade is modelled by detailed calculations of non-linear transport taking into account forbidden transitions. △ Less

Submitted 8 August, 2002; v1 submitted 6 September, 2001; originally announced September 2001.

Comments: 4 pages, 4 figures

Journal ref: Europhys. Lett. 62, 712 (2003)

Adiabatic steering and determination of dephasing rates in double dot qubits

Authors: T. Brandes, F. Renzoni, R. H. Blick

Abstract: We propose a scheme to prepare arbitrary superpositions of quantum states in double quantum--dots irradiated by coherent microwave pulses. Solving the equations of motion for the dot density matrix, we find that dephasing rates for such superpositions can be quantitatively infered from additional electron current pulses that appear due to a controllable breakdown of coherent population trap**… ▽ More We propose a scheme to prepare arbitrary superpositions of quantum states in double quantum--dots irradiated by coherent microwave pulses. Solving the equations of motion for the dot density matrix, we find that dephasing rates for such superpositions can be quantitatively infered from additional electron current pulses that appear due to a controllable breakdown of coherent population trap** in the dots. △ Less

Submitted 23 April, 2001; originally announced April 2001.

Comments: 5 pages, 4 figures. To appear in Phys. Rev. B

Journal ref: Phys. Rev. B. 64, 035319 (2001)

A nanomechanical resonator shuttling single electrons at radio frequencies

Authors: A. Erbe, C. Weiss, W. Zwerger, R. H. Blick

Abstract: We observe transport of electrons through a metallic island on the tip of a nanomechanical pendulum. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. We explain the I-V curve, which differs from previous theoretical predictions, with… ▽ More We observe transport of electrons through a metallic island on the tip of a nanomechanical pendulum. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. We explain the I-V curve, which differs from previous theoretical predictions, with model calculations based on a Master equation approach. △ Less

Submitted 24 November, 2000; originally announced November 2000.

Comments: 5 pages, 4 jpeg-figures

Journal ref: Phys. Rev. Lett. 87, 096106 (2001)

Comparing schemes of displacement detection and subharmonic generation in nanomachined mechanical resonators

Authors: Florian W. Beil, Laura Pescini, Eva Höhberger, Andreas Kraus, Artur Erbe, Robert H. Blick

Abstract: We present measurements on nanomechanical resonators operating in the radio frequency range. We apply a setup which allows the comparison of two schemes of displacement detection for mechanical resonators, namely conventional power reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection, we employ an on-chip preamplif… ▽ More We present measurements on nanomechanical resonators operating in the radio frequency range. We apply a setup which allows the comparison of two schemes of displacement detection for mechanical resonators, namely conventional power reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection, we employ an on-chip preamplifier, which enables direct measurements of the resonator's displacement. We observe that the response of the mechanical resonator depends on the detection technique applied, which is verified in model calculations. We show results on the detection of subharmonics.-Paper withdrawn △ Less

Submitted 15 May, 2002; v1 submitted 17 November, 2000; originally announced November 2000.

Comments: 8 pages, 3 figures

Superposition of photon- and phonon- assisted tunneling in coupled quantum dots

Authors: H. Qin, A. W. Holleitner, K. Eberl, R. H. Blick

Abstract: We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular states in the coupled dots are probed by photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as a result of the resonance between the microwave… ▽ More We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular states in the coupled dots are probed by photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as a result of the resonance between the microwave photons and the molecular states. Below 8 GHz, a pronounced superposition of phonon- and photon-assisted tunneling is observed. Coherent superposition of molecular states persists under excitation of acoustic phonons. △ Less

Submitted 11 July, 2001; v1 submitted 9 November, 2000; originally announced November 2000.

Comments: 5 pages, 4 figures

Coherent coupling of two quantum dots embedded in an Aharonov-Bohm ring

Authors: A. W. Holleitner, C. R. Decker, K. Eberl, R. H. Blick

Abstract: We define two laterally gated small quantum dots (~ 15 electrons) in an Aharonov-Bohm geometry in which the coupling between the two dots can be broadly changed. For weakly coupled quantum dots we find Aharonov-Bohm oscillations. In an intermediate coupling regime we concentrate on the molecular states of the double dot and extract the magnetic field dependence of the coherent coupling. We define two laterally gated small quantum dots (~ 15 electrons) in an Aharonov-Bohm geometry in which the coupling between the two dots can be broadly changed. For weakly coupled quantum dots we find Aharonov-Bohm oscillations. In an intermediate coupling regime we concentrate on the molecular states of the double dot and extract the magnetic field dependence of the coherent coupling. △ Less

Submitted 2 November, 2000; originally announced November 2000.

Comments: 6 pages, 4 figures

Magnetotransport measurements on freely suspended two-dimensional electron gases

Authors: R. H. Blick, F. G. Monzon, W. Wegscheider, M. Bichler, F. Stern, M. L. Roukes

Abstract: We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a sacrificial layer. We fabricated simple Hall-bars as well as quantum cavities and quantum dot systems. We find well-pronounced Shubnikov-de Haas oscillations and… ▽ More We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a sacrificial layer. We fabricated simple Hall-bars as well as quantum cavities and quantum dot systems. We find well-pronounced Shubnikov-de Haas oscillations and observe commensurability resonances, allowing characterization of the electron gas in these 100 nm thin membranes. △ Less

Submitted 22 August, 2000; originally announced August 2000.

Comments: 7 pages, 10 figures, submitted to PRB

Determination of the complex microwave photoconductance of a single quantum dot

Authors: H. Qin, F. Simmel, R. H. Blick, J. P. Kotthaus, W. Wegscheider, M. Bichler

Abstract: A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance re… ▽ More A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance resolves photon-assisted tunneling (PAT) in the non-linear regime through the ground state and an excited state as well. The out-of-phase component (susceptance) allows to study charge relaxation within the quantum dot on a time scale comparable to the microwave beat period. △ Less

Submitted 10 November, 2000; v1 submitted 10 March, 2000; originally announced March 2000.

Comments: 5.5 pages, 6 figures, accepted by Phys. Rev. B (Jan. B15 2001)

Mechanical Mixing in Nonlinear Nanomechanical Resonators

Authors: A. Erbe, G. Corso, H. Krommer, A. Kraus, K. Richter, R. H. Blick

Abstract: Nanomechanical resonators, machined out of Silicon-on-Insulator wafers, are operated in the nonlinear regime to investigate higher-order mechanical mixing at radio frequencies, relevant to signal processing and nonlinear dynamics on nanometer scales. Driven by two neighboring frequencies the resonators generate rich power spectra exhibiting a multitude of satellite peaks. This nonlinear response… ▽ More Nanomechanical resonators, machined out of Silicon-on-Insulator wafers, are operated in the nonlinear regime to investigate higher-order mechanical mixing at radio frequencies, relevant to signal processing and nonlinear dynamics on nanometer scales. Driven by two neighboring frequencies the resonators generate rich power spectra exhibiting a multitude of satellite peaks. This nonlinear response is studied and compared to $n^{th}$-order perturbation theory and nonperturbative numerical calculations. △ Less

Submitted 15 December, 1999; originally announced December 1999.

Comments: 5 pages, 7 figures

Report number: mpi-pks/9912003

Nanomechanical vibrating wire resonator for phonon spectroscopy in Helium

Authors: Andreas Kraus, Artur Erbe, Robert H. Blick

Abstract: We demonstrate how to build a vibrating wire resonator for phonon excitation in liquid helium. The resonator is designed as a nanoscopic mechanically flexible beam machined out of a semiconductor/metal-hybrid. Quenching of the mechanical resonance around 100 MHz by phonon excitation in liquid ^4He at 4.2 K is shown. First measurements operating the nano-resonator in a dilution of ^3He/^4He at 30… ▽ More We demonstrate how to build a vibrating wire resonator for phonon excitation in liquid helium. The resonator is designed as a nanoscopic mechanically flexible beam machined out of a semiconductor/metal-hybrid. Quenching of the mechanical resonance around 100 MHz by phonon excitation in liquid ^4He at 4.2 K is shown. First measurements operating the nano-resonator in a dilution of ^3He/^4He at 30 mK are presented. △ Less

Submitted 2 December, 1999; originally announced December 1999.

Comments: 4pages, 4 figures