Showing 1–50 of 66 results for author: Biswas, D

Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source

Authors: Matthias Schmitt, Deepnarayan Biswas, Olena Tkach, Olena Fedchenko, Jieyi Liu, Hans-Joachim Elmers, Michael Sing, Ralph Claessen, Tien-Lin Lee, Gerd Schönhense

Abstract: Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the D… ▽ More Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the Diamond Light Source, UK. The key component is a large single hemispherical spectrometer combined with a time-of-flight analyzer behind the exit slit. The photon energy ranges from hv = 105 eV to 2 keV, with circular polarization available for hv > 150 eV, allowing for circular dichroism measurements in angle-resolved photoemission (CD-ARPES). A focused and monochromatized He lamp is used for offline measurements. Under k-imaging conditions, energy and momentum resolution are 10.2 meV (FWHM) and 0.010 angstroms^-1 (base resolution 4.2 meV with smallest slits and a pass energy of 8 eV). The large angular filling of the entrance lens and hemisphere (225 mm path radius) allows k-field-of-view diameters > 6 angstroms^-1. Energy filtered X-PEEM mode using synchrotron radiation revealed a resolution of 300 nm. As examples we show 2D band map** of bilayer graphene, 3D map** of the Fermi surface of Cu, CD-ARPES for intercalated indenene layers and the sp valence bands of Cu and Au, and full-field photoelectron diffraction patterns of Ge. △ Less

Submitted 2 June, 2024; originally announced June 2024.

Comments: 20 pages, 9 figures

Where are the photons in a transmission-line pulse?

Authors: Evangelos Varvelis, Debjyoti Biswas, David P. DiVincenzo

Abstract: We develop a photonic description of short, one-dimensional electromagnetic pulses, specifically in the language of electrical transmission lines. Current practice in quantum technology, using arbitrary waveform generators, can readily produce very short, few-cycle pulses in microwave TEM guided structures (coaxial cables or coplanar waveguides) in a very low noise, low temperature setting. We arg… ▽ More We develop a photonic description of short, one-dimensional electromagnetic pulses, specifically in the language of electrical transmission lines. Current practice in quantum technology, using arbitrary waveform generators, can readily produce very short, few-cycle pulses in microwave TEM guided structures (coaxial cables or coplanar waveguides) in a very low noise, low temperature setting. We argue that these systems attain the limit of producing pure coherent quantum states, in which the vacuum has been displaced for a short time, and therefore short spatial extent. When the pulse is bipolar, that is, the integrated voltage of the pulse is zero, then the state can be described by the finite displacement of a single mode. Therefore there is a definite mean number of photons, but which have neither a well defined frequency nor position. Due to the Paley-Wiener theorem, the two-component photon 'wavefunction' of this mode is not strictly bounded in space even if the vacuum displacement that defines it is bounded. This wavefunction's components are, for the case of pulses moving in a specific direction, complex valued, with the real and imaginary parts related by a Hilbert transform. They are thus akin to the 'analytic signals' of communication theory. When the pulse is unipolar no photonic description is possible -- the photon number can be considered to be divergent. We consider properties that photon counters and quantum non-demolition detectors must have to optimally convert and detect the photons in several example pulses, and we discuss some consequence of this optimization for the application of very short pulses in quantum cryptography. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 9 pages, 4 figures

Journal ref: Proceedings of the National Academy of Sciences 121, e2314846121 (2024)

Fast and accurate determination of the curvature-corrected field emission current

Authors: Debabrata Biswas, Rajasree Ramachandran

Abstract: The curvature-corrected field emission current density, obtained by linearizing at or below the Fermi energy, is investigated. Two special cases, corresponding to the peak of the normal energy distribution and the mean normal energy, are considered. It is found that the current density evaluated using the mean normal energy results in errors in the net emission current below 3% for apex radius of… ▽ More The curvature-corrected field emission current density, obtained by linearizing at or below the Fermi energy, is investigated. Two special cases, corresponding to the peak of the normal energy distribution and the mean normal energy, are considered. It is found that the current density evaluated using the mean normal energy results in errors in the net emission current below 3% for apex radius of curvature, $R_a \geq 5$nm and for apex fields $E_a$ in the range $3-10$ V/nm for an emitter having work-function $φ= 4.5$eV. An analytical expression for the net field emission current is also obtained for locally parabolic tips using the generalized cosine law. The errors are found to be below 6% for $R_a \geq 5$nm over an identical range of apex field strengths. The benchmark current is obtained by numerically integrating the current density over the emitter surface and the current density itself computed by integrating over the energy states using the exact Gamow factor and the Kemble form for the WKB transmission coefficient. The analytical expression results in a remarkable speed-up in the computation of the net emission current and is especially useful for large area field emitters having tens of thousands of emission sites. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 11 pages, 9 figures

External screening and lifetime of exciton population in single-layer ReSe$_2$ probed by time- and angle-resolved photoemission spectroscopy

Authors: Klara Volckaert, Byoung Ki Choi, Hyuk ** Kim, Deepnarayan Biswas, Denny Puntel, Simone Peli, Fulvio Parmigiani, Federico Cilento, Young Jun Chang, Søren Ulstrup

Abstract: The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilay… ▽ More The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced excitations in such materials has not been sufficiently explored. Here, we apply an infrared optical excitation to single-layer ReSe$_2$ grown on a bilayer graphene substrate and monitor the temporal evolution of the excited state signal using time- and angle-resolved photoemission spectroscopy. We measure an optical gap of $(1.53 \pm 0.02)$ eV, consistent with resonant excitation of the lowest exciton state. The exciton distribution is tunable via the linear polarization of the pump pulse and exhibits a biexponential decay with time constants given by $τ_1 = (110 \pm 10)$ fs and $τ_2 = (650 \pm 70)$ fs, facilitated by recombination via an in-gap state that is pinned at the Fermi level. By extracting the momentum-resolved exciton distribution we estimate its real-space radial extent to be greater than 17.1 Å, implying significant exciton delocalization due to screening from the bilayer graphene substrate. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, L041001 (2023)

Nanoscale view of engineered massive Dirac quasiparticles in lithographic superstructures

Authors: Alfred J. H. Jones, Lene Gammelgaard, Mikkel O. Sauer, Deepnarayan Biswas, Roland J. Koch, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Antti-Pekka Jauho, Peter Bøggild, Thomas G. Pedersen, Bjarke S. Jessen, Søren Ulstrup

Abstract: Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale hole… ▽ More Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is discovered, underlining the Dirac nature of the superstructures. In situ electrostatic do** dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of (0.64 $\pm$ 0.03) eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The presented methodology outlines a new approach for band structure engineering guided by directly viewing structurally- and electrically-tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale. △ Less

Submitted 17 December, 2022; originally announced December 2022.

Comments: 37 pages, 12 figures (includes supporting information). A revised version has been published in ACS Nano

Journal ref: ACS Nano 2022, 16, 11, 19354-19362

Experimental Implementation of an Efficient Test of Quantumness

Authors: Laura Lewis, Daiwei Zhu, Alexandru Gheorghiu, Crystal Noel, Or Katz, Bahaa Harraz, Qingfeng Wang, Andrew Risinger, Lei Feng, Debopriyo Biswas, Laird Egan, Thomas Vidick, Marko Cetina, Christopher Monroe

Abstract: A test of quantumness is a protocol where a classical user issues challenges to a quantum device to determine if it exhibits non-classical behavior, under certain cryptographic assumptions. Recent attempts to implement such tests on current quantum computers rely on either interactive challenges with efficient verification, or non-interactive challenges with inefficient (exponential time) verifica… ▽ More A test of quantumness is a protocol where a classical user issues challenges to a quantum device to determine if it exhibits non-classical behavior, under certain cryptographic assumptions. Recent attempts to implement such tests on current quantum computers rely on either interactive challenges with efficient verification, or non-interactive challenges with inefficient (exponential time) verification. In this paper, we execute an efficient non-interactive test of quantumness on an ion-trap quantum computer. Our results significantly exceed the bound for a classical device's success. △ Less

Submitted 28 September, 2022; originally announced September 2022.

Comments: 6 pages, 2 figures

Programming moiré patterns in 2D materials by bending

Authors: Mäelle Kapfer, Bjarke S. Jessen, Megan E. Eisele, Matthew Fu, Dorte R. Danielsen, Thomas P. Darlington, Samuel L. Moore, Nathan R. Finney, Ariane Marchese, Valerie Hsieh, Paulina Majchrzak, Zhihao Jiang, Deepnarayan Biswas, Pavel Dudin, José Avila, Kenji Watanabe, Takashi Taniguchi, Søren Ulstrup, Peter Bøggild, P. J. Schuck, Dmitri N. Basov, James Hone, Cory R. Dean

Abstract: Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to rando… ▽ More Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Journal ref: Science, 381, 2023, pp 677-681

Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures

Authors: Paulina Majchrzak, Klara Volckaert, Deepnarayan Biswas, Denny Puntel, Wibke Bronsch, Federico Cilento, Xing-Chen Pan, Yong P. Chen, Søren Ulstrup

Abstract: Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following… ▽ More Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy. We gain access to the out-of-equilibrium surface electronic structure of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states that are resonant with the optical excitation in the Bi$_2$Te$_3$ layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by in-plane phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The competition of interlayer charge transfer and intralayer phonon scattering establishes MnBi$_2$Te$_4$-based compounds as a platform for controlling ultrafast charge transfer processes in combination with magnetism and topology in van der Waals heterostructures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

Comments: 17 pages, 4 figures

Journal ref: A substantially revised version is published in Nano Letters (2023)

Semi-analytical theory of emission and transport in a LAFE-based diode

Authors: Debabrata Biswas, Rashbihari Rudra, Raghwendra Kumar

Abstract: A large area field emitter (LAFE) typically consists of several thousands of nanoscale emitting tips. These are difficult to simulate using purely numerical methods based on finite/boundary element or finite difference methods. We show here that a semi-analytically obtained electrostatic field allows tracking of field emitted electrons of a LAFE fairly accurately using the knowledge of only the LA… ▽ More A large area field emitter (LAFE) typically consists of several thousands of nanoscale emitting tips. These are difficult to simulate using purely numerical methods based on finite/boundary element or finite difference methods. We show here that a semi-analytically obtained electrostatic field allows tracking of field emitted electrons of a LAFE fairly accurately using the knowledge of only the LAFE geometry. Using a single and a 9-emitter configuration, the beam parameters calculated using this method are compared with the results of tracking using fields generated by COMSOL. The net emission current, energy conservation and the transverse trace-emittance are found to be reproduced with reasonable accuracy. △ Less

Submitted 15 June, 2022; originally announced June 2022.

Comments: 8 pages, 6 figures

Journal ref: Physics of Plasmas 29, 073102 (2022)

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Authors: Xiaochun Huang, Rui Xiong, Klara Volckaert, Chunxue Hao, Deepnarayan Biswas, Marco Bianchi, Philip Hofmann, Philip Beck, Jonas Warmuth, Baisheng Sa, Jens Wiebe, Roland Wiesendanger

Abstract: Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth… ▽ More Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Gamow factors and current densities in cold field emission theory: a comparative study

Authors: Debabrata Biswas

Abstract: The factors that contribute to the accuracy of the cold field emission current within the contemporary frameworks are investigated. It is found that so long as the net current is evaluated using an expression for the local current density obtained by linearizing the Gamow factor, the primary source of error is the choice of the energy at which the Taylor expansion is done, but not as much on the c… ▽ More The factors that contribute to the accuracy of the cold field emission current within the contemporary frameworks are investigated. It is found that so long as the net current is evaluated using an expression for the local current density obtained by linearizing the Gamow factor, the primary source of error is the choice of the energy at which the Taylor expansion is done, but not as much on the choice of the method used to arrive at the approximate Gamow factor. A suitable choice of linearization energy and the implementation of the Kemble correction, allows the restriction of errors to below 3\% across a wide range of local fields. △ Less

Submitted 28 March, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 7 pages, 6 figures, 2 figures replaced

Journal ref: Journal of Applied Physics 131, 154301 (2022)

Interactive Protocols for Classically-Verifiable Quantum Advantage

Authors: Daiwei Zhu, Gregory D. Kahanamoku-Meyer, Laura Lewis, Crystal Noel, Or Katz, Bahaa Harraz, Qingfeng Wang, Andrew Risinger, Lei Feng, Debopriyo Biswas, Laird Egan, Alexandru Gheorghiu, Yunseong Nam, Thomas Vidick, Umesh Vazirani, Norman Y. Yao, Marko Cetina, Christopher Monroe

Abstract: Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but… ▽ More Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but require more resources than what is available on near-term devices. One way to bridge the gap between verifiability and implementation is to use "interactions" between a prover and a verifier. By leveraging cryptographic functions, such protocols enable the classical verifier to enforce consistency in a quantum prover's responses across multiple rounds of interaction. In this work, we demonstrate the first implementation of an interactive quantum advantage protocol, using an ion trap quantum computer. We execute two complementary protocols -- one based upon the learning with errors problem and another where the cryptographic construction implements a computational Bell test. To perform multiple rounds of interaction, we implement mid-circuit measurements on a subset of trapped ion qubits, with subsequent coherent evolution. For both protocols, the performance exceeds the asymptotic bound for classical behavior; maintaining this fidelity at scale would conclusively demonstrate verifiable quantum advantage. △ Less

Submitted 21 June, 2022; v1 submitted 9 December, 2021; originally announced December 2021.

Comments: 11 pages, 3 figures; supp. info 23 pages, 4 figures

Journal ref: Nature Physics (2023)

Interpreting the empirical field emission equation for large area field emitters

Authors: Debabrata Biswas

Abstract: Both single emitters and large area field emitters (LAFE) are generally characterized using the slope and intercept of a Murphy-Good (or Fowler-Nordheim) plot which are used to extract the field enhancement factor and the emission area. Using a shielding model that has been developed recently for a LAFE, the validity of the underlying assumption is investigated. It is found that in case of a LAFE,… ▽ More Both single emitters and large area field emitters (LAFE) are generally characterized using the slope and intercept of a Murphy-Good (or Fowler-Nordheim) plot which are used to extract the field enhancement factor and the emission area. Using a shielding model that has been developed recently for a LAFE, the validity of the underlying assumption is investigated. It is found that in case of a LAFE, the slope has contributions from the enhancement factor {\it as well as} the rate at which the effective number of super-emitters changes with the applied field. As a consequence, the emission area is related to both the slope and the intercept in a LAFE. When the mean spacing in a LAFE is much larger than the height of emitter, the usual interpretation of the slope and intercept are recovered. △ Less

Submitted 5 January, 2022; v1 submitted 2 December, 2021; originally announced December 2021.

Comments: 6 pages, 4 figures

Journal ref: Journal of Vacuum Science & Technology B 40, 023201 (2022)

Scaling in large area field emitters and the emission dimension

Authors: Rashbihari Rudra, Debabrata Biswas

Abstract: Electrostatic shielding is an important consideration for large area field emitters (LAFE) and results in a distribution of field enhancement factors even when the constituent emitters are identical. Ideally, the mean and variance together with the nature of the distribution should characterize a LAFE. In practice however, it is generally characterized by an effective field enhancement factor obta… ▽ More Electrostatic shielding is an important consideration for large area field emitters (LAFE) and results in a distribution of field enhancement factors even when the constituent emitters are identical. Ideally, the mean and variance together with the nature of the distribution should characterize a LAFE. In practice however, it is generally characterized by an effective field enhancement factor obtained from a linear fit to a Fowler-Nordheim plot of the $\text{I V}$ data. An alternate characterization is proposed here based on the observation that for a dense packing of emitters, shielding is large and LAFE emission occurs largely from the periphery, while well separated emitter tips show a more uniform or 2-dimensional emission. This observation naturally leads to the question of the existence of an emission-dimension, $D_e$ for characterizing LAFEs. We show here that the number of patches of size $L_P$ in the ON-state (above average emission) scales as $N(L_P) \sim L_P^{-D_e}$ in a given LAFE. The exponent $D_e$ is found to depend on the applied field (or voltage) and approaches $D_e = 2$ asymptotically. △ Less

Submitted 28 July, 2021; v1 submitted 21 June, 2021; originally announced June 2021.

Comments: 6 pages, 6 figures

Journal ref: Journal of Vacuum Science & Technology B 39, 053204 (2021)

Visualizing band structure hybridization and superlattice effects in twisted MoS$_2$/WS$_2$ heterobilayers

Authors: Alfred J. H. Jones, Ryan Muzzio, Sahar Pakdel, Deepnarayan Biswas, Davide Curcio, Nicola Lanatà, Philip Hofmann, Kathleen M. McCreary, Berend T. Jonker, Kenji Watanabe, Takashi Taniguchi, Simranjeet Singh, Roland J. Koch, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup

Abstract: A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band… ▽ More A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm 0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences in their electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrmΓ}$-point of the Brillouin zone, leading to a transition from a direct bandgap in the single-layer to an indirect gap in the heterostructure. Replicas of the hybridized states are observed at the centre of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Comments: 31 pages, 6 figures in the main text and 5 figures in the supporting information

Journal ref: 2D Mater. 9 015032 (2022)

Approximate universality in the electric field variation on a field-emitter tip in the presence of space charge

Authors: Raghwendra Kumar, Gaurav Singh, Debabrata Biswas

Abstract: The electric field at the surface of a curved emitter is necessary to calculate the field emission current. For smooth parabolic emitting tips where space charge is negligible, variation of the electric field at the surface is known to follow the generalized cosine law. Here we investigate the validity of the cosine law in the regime where space charge due to emitted electrons is important. Partic… ▽ More The electric field at the surface of a curved emitter is necessary to calculate the field emission current. For smooth parabolic emitting tips where space charge is negligible, variation of the electric field at the surface is known to follow the generalized cosine law. Here we investigate the validity of the cosine law in the regime where space charge due to emitted electrons is important. Particle-in-Cell (PIC) simulations with an emission algorithm based on the cosine law is employed for this study. It is shown that if $E_P$ and $E_L$ be the field at the apex of tip with and without space charge respectively, then for $\vartheta=E_P/E_L \geq 0.9$, the average relative deviation of the electric field from the cosine law is less than $3\%$ over the endcap. Thus, an emission scheme based on cosine law may be used in PIC simulations of field emission of electrons from curved emitter tips in the weak space charge regime. The relation between $\vartheta$ and normalized current $ζ$ for curved emitters in this regime is also investigated. A linear relation, $\vartheta=1 - δζ$ (where $δ$ is a constant), similar to that obtained theoretically for flat emitting surfaces is observed but the value of $δ$ indicates that the extension of the theory for curved emitters may require incorporation of the field enhancement factor. △ Less

Submitted 28 July, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: 8 pages, 5 figures

Journal ref: Physics of Plasmas 28, 093110 (2021)

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Authors: P. Majchrzak, K. Volckaert, A. G. Cabo, D. Biswas, M. Bianchi, S. K. Mahatha, M. Dendzik, F. Andreatta, S. S. Grønborg, I. Marković, J. M. Riley, J. C. Johannsen, D. Lizzit, L. Bignardi, S. Lizzit, C. Cacho, O. Alexander, D. Matselyukh, A. S. Wyatt, R. T. Chapman, E. Springate, J. V. Lauritsen, P. D. C. King, C. E. Sanders, J. A. Miwa , et al. (2 additional authors not shown)

Abstract: The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing… ▽ More The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Comments: 10 pages, 4 figures

Higher order curvature corrections to the field emission current density

Authors: Debabrata Biswas, Rajasree Ramachandran

Abstract: A simple expression for the Gamow factor is obtained using a second order curvature corrected tunneling potential. Our results show that it approximates accurately the `exact-WKB' transmission coefficient obtained by numerically integrating over the tunneling region to obtain the Gamow factor. The average difference in current density using the respective transmission coefficients is about… ▽ More A simple expression for the Gamow factor is obtained using a second order curvature corrected tunneling potential. Our results show that it approximates accurately the `exact-WKB' transmission coefficient obtained by numerically integrating over the tunneling region to obtain the Gamow factor. The average difference in current density using the respective transmission coefficients is about $1.5 \%$, across a range of work-functions $φ\in [3-5.5]$eV, Fermi energy ${\cal{E}}_F$ in [5-10]eV, local electric fields $E_l$ in[3-9]eV and radius of curvature $R \geq 5$nm). An easy-to-use correction factor $λ_P$ is also provided to approximately map the `exact-WKB' current density to the `exact' current density in terms of ${\cal{E}}_F/φ$. The average error on using $λ_P$ is found to be around $3.5\%$. This is a vast improvement over the average error of $15\%$ when $λ_P = 1$. Finally, an analytical expression for the curvature-corrected current density is obtained using the Gamow factor. It is found to compare well with the `exact-WKB' current density even at small values of local electric field and radius of curvature. △ Less

Submitted 18 March, 2021; originally announced March 2021.

Comments: 8 pages

Journal ref: Journal of Applied Physics 129, 194303 (2021)

Approximate universality in the tunneling potential for curved field emitters -- a line charge model approach

Authors: Rajasree Ramachandran, Debabrata Biswas

Abstract: Field emission tips with apex radius of curvature below 100nm are not adequately described by the standard theoretical models based on the Fowler-Nordheim and Murphy-Good formalisms. This is due to the breakdown of the `constant electric field' assumption within the tunneling region leading to substantial errors in current predictions. A uniformly applicable curvature-corrected field emission theo… ▽ More Field emission tips with apex radius of curvature below 100nm are not adequately described by the standard theoretical models based on the Fowler-Nordheim and Murphy-Good formalisms. This is due to the breakdown of the `constant electric field' assumption within the tunneling region leading to substantial errors in current predictions. A uniformly applicable curvature-corrected field emission theory requires that the tunneling potential be approximately universal irrespective of the emitter shape. Using the line charge model, it is established analytically that smooth generic emitter tips approximately follow this universal trend when the anode is far away. This is verified using COMSOL for various emitter shapes including the locally non-parabolic `hemisphere on a cylindrical post'. It is also found numerically that the curvature-corrected tunneling potential provides an adequate approximation when the anode is in close proximity as well as in the presence of other emitters. △ Less

Submitted 8 April, 2021; v1 submitted 2 March, 2021; originally announced March 2021.

Comments: 10 pages, 7 figures

Journal ref: Journal of Applied Physics 129, 184301 (2021)

Hot carrier-assisted switching of the electron-phonon interaction in 1$T$-VSe$_2$

Authors: Paulina Majchrzak, Sahar Pakdel, Deepnarayan Biswas, Alfred J. H. Jones, Klara Volckaert, Igor Marković, Federico Andreatta, Raman Sankar, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Nicola Lanata, Young Jun Chang, Søren Ulstrup

Abstract: We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent… ▽ More We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed. △ Less

Submitted 12 November, 2020; originally announced November 2020.

Comments: 24 pages including supplemental material, 4 figures in the main text and 4 figures in the supplemental material

Journal ref: Phys. Rev. B 103, 241108 (2021)

Simulating multiscale gated field emitters -- a hybrid approach

Authors: Shreya Sarkar, Raghwendra Kumar, Gaurav Singh, Debabrata Biswas

Abstract: Multi-stage cathodes are promising candidates for field emission due to the multiplicative effect in local field predicted by the Schottky conjecture and its recent corrected counterpart [J. Vac. Sci. Technol. B 38, 023208 (2020)]. Due to the large variation in length scales even in a 2-stage compound structure consisting of a macroscopic base and a microscopic protrusion, the simulation methodolo… ▽ More Multi-stage cathodes are promising candidates for field emission due to the multiplicative effect in local field predicted by the Schottky conjecture and its recent corrected counterpart [J. Vac. Sci. Technol. B 38, 023208 (2020)]. Due to the large variation in length scales even in a 2-stage compound structure consisting of a macroscopic base and a microscopic protrusion, the simulation methodology of a gated field emitting compound diode needs to be revisited. As part of this strategy, the authors investigate the variation of local field on the surface of a compound emitter near its apex and find that the generalized cosine law continues to hold locally near the tip of a multi-scale gated cathode. This is used to emit charges with appropriate distributions in position and velocity components with a knowledge of only the electric field at the apex. The distributions are consistent with contemporary free-electron field emission model and follow from the joint distribution of launch angle, total energy, and normal energy. For a compound geometry with local field enhancement by a factor of around 1000, a hybrid model is used where the vacuum field calculated using COMSOL is imported into the Particle-In-Cell code PASUPAT where the emission module is implemented. Space charge effects are incorporated in a multi-scale adaptation of PASUPAT using a truncated geometry with `open electrostatic boundary' condition. The space charge field, combined with the vacuum field, is used for particle-emission and tracking. △ Less

Submitted 17 December, 2020; v1 submitted 6 November, 2020; originally announced November 2020.

Comments: 8 pages, 10 figures

Journal ref: Physics of Plasmas 28, 013111 (2021)

Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$

Authors: Deepnarayan Biswas, Alfred J. H. Jones, Paulina Majchrzak, Byoung Ki Choi, Tsung-Han Lee, Klara Volckaert, Jiagui Feng, Igor Marković, Federico Andreatta, Chang-Jong Kang, Hyuk ** Kim, In Hak Lee, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam S. Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Young Jun Chang , et al. (2 additional authors not shown)

Abstract: Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin… ▽ More Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light. △ Less

Submitted 27 July, 2020; originally announced July 2020.

Comments: 23 pages including supplementary information, 3 figures in the main text and 6 figures in the supplemental text

Journal ref: Nano Lett. 21, 1968-1975 (2021)

Enhanced space charge limited current for curved electron emitters

Authors: Gaurav Singh, Raghwendra Kumar, Debabrata Biswas

Abstract: The maximum current that can be transported across a vacuum diode is limited by forces arising due to space charge. In a planar diode configuration, the space charge limited (SCL) current density from a planar emitting patch is given by the Child-Langmuir (CL) law $J_{CL} \sim V_g^{3/2}/D^2$ where $V_g$ is the potential difference across the diode and $D$ is the separation between the anode and ca… ▽ More The maximum current that can be transported across a vacuum diode is limited by forces arising due to space charge. In a planar diode configuration, the space charge limited (SCL) current density from a planar emitting patch is given by the Child-Langmuir (CL) law $J_{CL} \sim V_g^{3/2}/D^2$ where $V_g$ is the potential difference across the diode and $D$ is the separation between the anode and cathode. We show here analytically using the nonlinear line charge model that for a curved emitter in a planar diode configuration, the limiting current obeys the scaling relationship $J_{SCL} \sim γ_a V_g^{3/2}/D^2$ where $γ_a$ is the apex field enhancement factor of the curved emitter. For an emitter with large height ($h$) to apex radius of curvature ($R_a$) ratio, the limiting current far exceeds the planar value. The result is verified using the particle-in-cell code PASUPAT for two curved emitters shapes. △ Less

Submitted 4 August, 2020; v1 submitted 29 June, 2020; originally announced June 2020.

Comments: 5 pages, 4 figures

Journal ref: Physics of Plasmas 27, 104501 (2020)

Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES

Authors: Alfred J. H. Jones, Ryan Muzzio, Paulina Majchrzak, Sahar Pakdel, Davide Curcio, Klara Volckaert, Deepnarayan Biswas, Jacob Gobbo, Simranjeet Singh, Jeremy T. Robinson, Kenji Watanabe, Takashi Taniguchi, Timur K. Kim, Cephise Cacho, Nicola Lanata, Jill A. Miwa, Philip Hofmann, Jyoti Katoch, Søren Ulstrup

Abstract: The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi ener… ▽ More The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The do** dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and do** where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 16 pages, 4 figures. A revised version of the manuscript has been accepted for publication in Advanced Materials

Journal ref: Adv. Mater. 32, 2001656 (2020)

Pnictogens Allotropy and Phase Transformation during van der Waals Growth

Authors: Matthieu Fortin-Deschênes, Hannes Zschiesche, Tevfik O. Menteş, Andrea Locatelli, Robert M. Jacobberger, Francesca Genuzio, Maureen J. Lagos, Deepnarayan Biswas, Chris Jozwiak, Jill A. Miwa, Søren Ulstrup, Aaron Bostwick, Eli Rotenberg, Michael S. Arnold, Gianluigi A. Botton, Oussama Moutanabbir

Abstract: Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light group VA elements are found in the layered orthorhombic A17 phase such as black phosphorus, and can transition to the layered rhombohedral A7 phase at high… ▽ More Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light group VA elements are found in the layered orthorhombic A17 phase such as black phosphorus, and can transition to the layered rhombohedral A7 phase at high pressure. On the other hand, bulk heavier elements are only stable in the A7 phase. Herein, we demonstrate that these two phases not only co-exist during the vdW growth of antimony on weakly interacting surfaces, but also undertake a spontaneous transformation from the A17 phase to the thermodynamically stable A7 phase. This metastability of the A17 phase is revealed by real-time studies unraveling its thickness-driven transition to the A7 phase and the concomitant evolution of its electronic properties. At a critical thickness of ~4 nm, A17 antimony undergoes a diffusionless shuffle transition from AB to AA stacked alpha-antimonene followed by a gradual relaxation to the A7 bulk-like phase. Furthermore, the electronic structure of this intermediate phase is found to be determined by surface self-passivation and the associated competition between A7- and A17-like bonding in the bulk. These results highlight the critical role of the atomic structure and interfacial interactions in sha** the stability and electronic characteristics of vdW layered materials, thus enabling a new degree of freedom to engineer their properties using scalable processes. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Mixed ground state in Fe-Ni Invar alloys

Authors: S. S. Acharya, V. R. R. Medicherla, Komal Bapna, Khadiza Ali, Deepnarayan Biswas, Rajeev Rawat, Kalobaran Maiti

Abstract: We investigate the ground state properties of Invar alloys via detailed study of the electronic structure of Fe$_{1-x}$Ni$_x$ alloys ($x$ = 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.9) employing $x$-ray photoelectron spectroscopy (XPS). While all the alloys exhibit soft ferromagnetic behavior with Curie temperature much higher than the room temperature, the results for invar alloy, Fe$_{0.6}$Ni$_{0.4}$ exhi… ▽ More We investigate the ground state properties of Invar alloys via detailed study of the electronic structure of Fe$_{1-x}$Ni$_x$ alloys ($x$ = 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.9) employing $x$-ray photoelectron spectroscopy (XPS). While all the alloys exhibit soft ferromagnetic behavior with Curie temperature much higher than the room temperature, the results for invar alloy, Fe$_{0.6}$Ni$_{0.4}$ exhibit anomalous behavior. Moreover, the magneto-resistance of the Invar alloy becomes highly negative while the end members possess positive magneto-resistance. The core level spectra of the Invar alloy exhibit emergence of a distinct new feature below 20~K while all other Fe-Ni alloys exhibit no temperature dependence down to 10~K. Interestingly, the shallow core level spectra (3$s$, 3$p$) of Fe and Ni of the Invar alloy reveal stronger deviation at low temperatures compared to the deep core levels (2$s$, 2$p$) indicating crystal field effect. It appears that there is a large precipitation of antiferromagnetic $γ^\prime$ phase below 20 K possessing low magnetic moment (0.5$μ_B$) on Fe within the $α$ phase. The discovery of negative magneto-resistance, anomalous magnetization at low temperature and the emergence of unusual new features in the core levels at low temperature provide an evidence of mixed phase in the ground state of Invar alloys. △ Less

Submitted 23 May, 2020; originally announced May 2020.

Comments: 9 pages, 11 figures

A hybrid approach to modelling large area field emitters

Authors: Debabrata Biswas

Abstract: Large area field electron emitters, typically consisting of several thousands of nanotips, pose a major challenge since numerical modeling requires enormous computational resources. We propose a hybrid approach where the local electrostatic field enhancement parameters of an individual emitter is determined numerically while electrostatic shielding and anode-proximity effects are incorporated usin… ▽ More Large area field electron emitters, typically consisting of several thousands of nanotips, pose a major challenge since numerical modeling requires enormous computational resources. We propose a hybrid approach where the local electrostatic field enhancement parameters of an individual emitter is determined numerically while electrostatic shielding and anode-proximity effects are incorporated using recent analytical advances. The hybrid model is tested numerically on an ordered arrangement of emitters and then applied to recent experimental results on randomly distributed gold nanocones. Using the current-voltage data of two samples with vastly different emitter densities but having similar nanocone sizes, we show that an appropriate modeling of the emitter-apex together with the analytical results on shielding and anode-proximity effects, leads to consistent results for the apex radius of curvature. In both cases, the $\text{I-V}$ data is approximately reproduced for $R_a \simeq 9$nm. Importantly, it is found that anode-proximity plays a significant role in counter-balancing electrostatic shielding and ignoring this effect results in the requirement of a much smaller value of $R_a$. △ Less

Submitted 5 September, 2020; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 10 pages, 12 figures

Journal ref: Journal of Vacuum Science & Technology B 38, 063201 (2020)

Charge trap layer enabled positive tunable V$_{fb}$ in $β$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors

Authors: Dipankar Biswas, Chandan Joishi, Jayeeta Biswas, Prabhans Tiwari, Saurabh Lodha

Abstract: $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}… ▽ More $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}$ metal-oxide-semiconductor capacitors (MOSCAPs), with the ability to fine tune it between 3.5 V to 10.6 V, using a polycrystalline AlN charge trap layer has been demonstrated. This can enable enhancement mode operation over a wide do** range. Excellent V$_{fb}$ retention of ${\sim}$97% for 10$^{4}$ s at 55 $^{\circ}$C was exhibited by the gate stacks after charge trap**, hence reducing the requirement of frequent charge injection cycles. In addition, low gate leakage current density (J$_{g}$) for high negative gate voltages (V$_{g}$${\sim}$-60 V) indicates the potential of this gate stack to enable superior breakdown characteristics in enhancement mode transistors. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: Single file (Manuscript and Supplementary material combined) of 19 pages. Total 5 and 4 figures in manuscript and supplementary material, respectively

Accessing the spectral function in a current-carrying device

Authors: Davide Curcio, Alfred J. H. Jones, Ryan Muzzio, Klara Volckaert, Deepnarayan Biswas, Charlotte E. Sanders, Pavel Dudin, Cephise Cacho, Simranjeet Singh, Kenji Watanabe, Takashi Taniguchi, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup, Philip Hofmann

Abstract: The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known abou… ▽ More The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Comments: 9 pages, 8 figures

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Authors: Ryan Muzzio, Alfred J. H. Jones, Davide Curcio, Deepnarayan Biswas, Jill A. Miwa, Philip Hofmann, Kenji Watanabe, Takashi Taniguchi, Simranjeet Singh, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Roland J. Koch, Søren Ulstrup, Jyoti Katoch

Abstract: Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supporte… ▽ More Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the do**-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations. △ Less

Submitted 28 May, 2020; v1 submitted 10 January, 2020; originally announced January 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 101, 201409(R) (2020)

The Schottky Conjecture and beyond

Authors: Debabrata Biswas

Abstract: The `Schottky Conjecture' deals with the electrostatic field enhancement at the tip of compound structures such as a hemiellipsoid on top of a hemisphere. For such a 2-primitive compound structure, the apex field enhancement factor $γ_a^{(C)}$ is conjectured to be multiplicative ($γ_a^{(C)} = γ_a^{(1)} γ_a^{(2)}$) provided the structure at the base (labelled 1, e.g. the hemisphere) is much larger… ▽ More The `Schottky Conjecture' deals with the electrostatic field enhancement at the tip of compound structures such as a hemiellipsoid on top of a hemisphere. For such a 2-primitive compound structure, the apex field enhancement factor $γ_a^{(C)}$ is conjectured to be multiplicative ($γ_a^{(C)} = γ_a^{(1)} γ_a^{(2)}$) provided the structure at the base (labelled 1, e.g. the hemisphere) is much larger than the structure on top (referred to as crown and labelled 2, e.g. the hemi-ellipsoid). We first demonstrate numerically that for generic smooth structures, the conjecture holds in the limiting sense when the apex radius of curvature of the primitive-base $R_a^{(1)}$, is much larger than the height of the crown $h_2$ (i.e. $h_2/R_a^{(1)} \rightarrow 0$). If the condition is somewhat relaxed, we show that it is the electric field above the primitive-base (i.e. in the absence of the crown), averaged over the height of the crown, that gets magnified instead of the field at the apex of the primitive-base. This observation leads to the Corrected Schottky Conjecture (CSC), which for 2-primitive structures reads as $γ_a^{(C)}\simeq \langle γ_a^{(1)}\rangleγ_a^{(2)}$ where $\langle . \rangle$ denotes the average value over the height of the crown. For small protrusions ($h_2/h_1$ typically less than 0.2), $\langle γ_a^{(1)}\rangle$ can be approximately determined using the Line Charge Model so that $γ_a^{(C)} \simeq γ_a^{(1)}γ_a^{(2)} (2R_a^{(1)}/h_2)\ln(1 + h_2/2R_a^{(1)})$. The error is found to be within $1\%$ for $h_2/R_a^{(1)} < 0.05$, increasing to about $3\%$ (or less) for $h_2/R_a^{(1)} = 0.1$ and bounded below $5\%$ for $h_2/R_a^{(1)}$ as large as 0.5. The CSC is also found to give good results for 3-primitive compound structures. The relevance of the Corrected Schottky Conjecture for field emission is discussed. △ Less

Submitted 28 February, 2020; v1 submitted 9 December, 2019; originally announced December 2019.

Comments: 4 figures

Journal ref: Journal of Vacuum Science & Technology B 38, 023208 (2020)

Selective control of localised vs. delocalised carriers in anatase TiO2 through reaction with O2

Authors: Chiara Bigi, Zhenkun Tang, Gian Marco Pierantozzi, Pasquale Orgiani, Pranab Kumar Das, Jun Fujii, Ivana Vobornik, Tommaso Pincelli, Alessandro Troglia, Tien-Lin Lee, Regina Ciancio, Goran Dražic, Alberto Verdini, Anna Regoutz, Phil D. C. King, Deepnarayan Biswas, Giorgio Rossi, Giancarlo Panaccione, Annabella Selloni

Abstract: Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies… ▽ More Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies at the (001)-(1x4) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. Remarkably, the two states exhibit very different evolution when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. The energy scale analysis for the vacancy migration and recombination resulting from the DFT calculations confirms indeed that only the IGs originate from and remain localized at the surface, whereas the metallic states originate from subsurface vacancies, whose migration and recombination at the surface is energetically less favorable rendering them therefore insensitive to oxygen dosing. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. Materials 4, 025801 (2020)

Momentum-resolved linear dichroism in bilayer MoS$_2$

Authors: Klara Volckaert, Habib Rostami, Deepnarayan Biswas, Igor Marković, Federico Andreatta, Charlotte E. Sanders, Paulina Majchrzak, Cephise Cacho, Richard T. Chapman, Adam Wyatt, Emma Springate, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Sanjoy K. Mahatha, Marco Bianchi, Nicola Lanata, Phil D. C. King, Jill A. Miwa, Alexander V. Balatsky, Philip Hofmann, Søren Ulstrup

Abstract: Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio… ▽ More Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 10 pages including supporting information, 3 figures in the main paper and 4 figures in the supporting information

Journal ref: Phys. Rev. B 100, 241406 (2019)

Electronic structure studies on single crystalline Nd2PdSi3, an exotic Nd-based intermetallic: Evidence for Nd 4f hybridization

Authors: Kalobaran Maiti, Tathamay Basu, Sangeeta Thakur, Nishaina Sahadev, Deepnarayan Biswas, Ganesh Adhikary, Yiku Xu, W. Loeser, E. V. Sampathkumaran

Abstract: In the series R2PdSi3, Nd2PdSi3 is an anomalous compound in the sense that it exhibits ferromagnetic order unlike other members in this family. The magnetic ordering temperature is also unusually high compared to the expected value for a Nd-based system, assuming 4f localization. Here, we have studied the electronic structure of single crystalline Nd2PdSi3 employing high resolution photoemission s… ▽ More In the series R2PdSi3, Nd2PdSi3 is an anomalous compound in the sense that it exhibits ferromagnetic order unlike other members in this family. The magnetic ordering temperature is also unusually high compared to the expected value for a Nd-based system, assuming 4f localization. Here, we have studied the electronic structure of single crystalline Nd2PdSi3 employing high resolution photoemission spectroscopy and ab initio band structure calculations. Theoretical results obtained for the effective electron correlation strength of 6 eV corroborate well with the experimental valence band spectra. While there is significant Pd 4d-Nd 4f hybridization, the states near the Fermi level are found to be dominated by hybridized Nd 4f-Si 3p states. Nd 3d core level spectrum exhibits multiple features manifesting strong final state effects due to electron correlation, charge transfer and collective excitations. These results serve as one of the rare demonstrations of hybridization of Nd 4$f$ states with the conduction electrons possibly responsible for the exoticity of this compound. △ Less

Submitted 22 September, 2019; originally announced September 2019.

Electrostatic shielding versus anode-proximity effect in large area field emitters

Authors: Debabrata Biswas, Rashbihari Rudra

Abstract: Field emisison of electrons crucially depends on the enhancement of the local electric field around nanotips. The enhancement is maximum when individual emitter-tips are well separated. As the distance between two or more nanotips decreases, the field enhancement at individual tips reduces due to the shielding effect. The anode-proximity effect acts in quite the opposite way, increasing the local… ▽ More Field emisison of electrons crucially depends on the enhancement of the local electric field around nanotips. The enhancement is maximum when individual emitter-tips are well separated. As the distance between two or more nanotips decreases, the field enhancement at individual tips reduces due to the shielding effect. The anode-proximity effect acts in quite the opposite way, increasing the local field as the anode is brought closer to the emitter. For isolated emitters, this effect is pronounced when the anode is at a distance less than three times the height of the emitter. It is shown here that for a large area field emitter (LAFE), the anode proximity effect increases dramatically and can counterbalance shielding effects to a large extent. Also, it is significant even when the anode is far away. The apex field enhancement factor for a LAFE in the presence of an anode is derived using the line charge model. It is found to explain the observations well and can accurately predict the apex enhancement factors. The results are supported by numerical studies using COMSOL Multiphysics. △ Less

Submitted 28 February, 2020; v1 submitted 22 September, 2019; originally announced September 2019.

Comments: 6 pages

Journal ref: Journal of Vacuum Science & Technology B 38, 023207 (2020)

Verification of shielding effect predictions for large area field emitters

Authors: Rashbihari Rudra, Debabrata Biswas

Abstract: A recent analytical model for large area field emitters, based on the line charge model (LCM), provides a simple approximate formula for the field enhancement on hemi-ellipsoidal emitter tips in terms of the ratio of emitter height and pairwise distance between neighboring emitters. The formula, verified against the exact solution of the linear LCM, was found to be adequate provided the mean separ… ▽ More A recent analytical model for large area field emitters, based on the line charge model (LCM), provides a simple approximate formula for the field enhancement on hemi-ellipsoidal emitter tips in terms of the ratio of emitter height and pairwise distance between neighboring emitters. The formula, verified against the exact solution of the linear LCM, was found to be adequate provided the mean separation between emitters is larger than half the emitter height. In this paper, we subject the analytical predictions to a more stringent test by simulating (i) an infinite regular array and (ii) an isolated cluster of 10 random emitters, using the finite element software COMSOL. In case of the array, the error in apex field enhancement factor (AFEF) is found to be less than $0.25\%$ for an infinite array when the lattice constant $c \geq 1.5h$, increasing to $2.9\%$ for $c = h$ and $8.1\%$ for $c = 0.75h$. For an isolated random cluster of 10 emitters, the error in large AFEF values is found to be small. Thus, the error in net emitted current is small for a random cluster compared to a regular infinite array with the same (mean) spacing. The line charge model thus provides a reasonable analytical tool for optimizing a large area field emitter. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Comments: 4 pages, 4 figures

Journal ref: AIP Advances 9, 125207 (2019)

Anisotropic two-dimensional screening at the surface of black phosphorus

Authors: Brian Kiraly, Elze J. Knol, Klara Volckaert, Deepnarayan Biswas, Alexander N. Rudenko, Danil A. Prishchenko, Vladimir G. Mazurenko, Mikhail I. Katsnelson, Philip Hofmann, Daniel Wegner, Alexander A. Khajetoorians

Abstract: Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic disper… ▽ More Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic dispersion. Here, we use the adsorption of individual potassium atoms on the surface of black phosphorus to vary the near-surface do** over a wide range, while simultaneously probing the dielectric screening via the ordering of the adsorbed atoms. Using scanning tunneling microscopy, we visualize the role of strongly anisotropic screening which leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band-bending induced confinement potential near the surface. We corroborate the observed behavior with coverage-dependent studies of the electronic structure with angle-resolved photoemission. △ Less

Submitted 1 July, 2019; v1 submitted 6 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Lett. 123, 216403 (2019)

Transient Hot Electron Dynamics in Single-Layer TaS$_2$

Authors: Federico Andreatta, Habib Rostami, Antonija Grubišić Čabo, Marco Bianchi, Charlotte E. Sanders, Deepnarayan Biswas, Cephise Cacho, Alfred J. H. Jones, Richard T. Chapman, Emma Springate, Phil D. C. King, Jill A. Miwa, Alexander Balatsky, Søren Ulstrup, Philip Hofmann

Abstract: Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (ener… ▽ More Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and $k$-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to 150 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant. △ Less

Submitted 23 January, 2019; originally announced January 2019.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 99, 165421 (2019)

The anode proximity effect for generic smooth field emitters

Authors: Debabrata Biswas

Abstract: The proximity of the anode to a curved field electron emitter alters the electric field at the apex and its neighbourhood. A formula for the apex field enhancement factor, $γ_a(D)$, for generic smooth emitters is derived using the line charge model when the anode is at a distance $D$ from the cathode plane. The resulting approximately modular form is such that the anode proximity contribution can… ▽ More The proximity of the anode to a curved field electron emitter alters the electric field at the apex and its neighbourhood. A formula for the apex field enhancement factor, $γ_a(D)$, for generic smooth emitters is derived using the line charge model when the anode is at a distance $D$ from the cathode plane. The resulting approximately modular form is such that the anode proximity contribution can be calculated separately (using geometric quantities such as the anode-cathode distance $D$, the emitter height $h$ and the emitter apex radius of curvature $R_a$) and plugged into the expression for $γ_a(\infty)$. It is also shown that the variation of the enhancement factor on the surface of the emitter close to the apex is unaffected by the presence of the anode and continues to obey the generalized cosine law. These results are verified numerically for various generic emitter shapes using COMSOL Multiphysics. Finally, the theory is applied to explain experimental observations on the scaling behavior of the $I-V$ field emission curve. △ Less

Submitted 7 May, 2019; v1 submitted 26 November, 2018; originally announced November 2018.

Comments: 10 pages, numerical verification added, references updated

Journal ref: Physics of Plasmas 26, 073106 (2019)

The cosine law of field enhancement factor variation: generic emitter shapes

Authors: Debabrata Biswas, Gaurav Singh, Rajasree Ramachandran

Abstract: The cosine law of field enhancement factor variation was recently derived for a hemi-ellipsoidal emitter and numerically established for other smooth emitter shapes (Biswas et al, Ultramicroscopy, 185, 1 (2018)). An analytical derivation is provided here for general smooth vertical emitter shapes aligned in the direction of the asymptotic electrostatic field. The law is found to hold in the neighb… ▽ More The cosine law of field enhancement factor variation was recently derived for a hemi-ellipsoidal emitter and numerically established for other smooth emitter shapes (Biswas et al, Ultramicroscopy, 185, 1 (2018)). An analytical derivation is provided here for general smooth vertical emitter shapes aligned in the direction of the asymptotic electrostatic field. The law is found to hold in the neighbourhood of the emitter apex from where field emisson pre-dominantly occurs. △ Less

Submitted 28 October, 2018; originally announced October 2018.

Comments: 5 pages

Journal ref: Physica E, 109, 179-182 (2019)

Probing spin correlations using angle resolved photoemission in a coupled metallic/Mott insulator system

Authors: V. Sunko, F. Mazzola, S. Kitamura, S. Khim, P. Kushwaha, O. J. Clark, M. Watson, I. Markovic, D. Biswas, L. Pourovskii, T. K. Kim, T. -L. Lee, P. K. Thakur, H. Rosner, A. Georges, R. Moessner, T. Oka, A. P. Mackenzie, P. D. C. King

Abstract: A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that… ▽ More A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that these arise because a hole created in the Mott layer moves to and propagates in the metallic layer while retaining memory of the Mott layer's magnetism. This picture is quantitatively supported by a strong coupling analysis capturing the physics of PdCrO$_{2}$ in terms of a Kondo lattice Hamiltonian. Our findings open new routes to use the non-magnetic probe of photoemission to gain insights into the spin-susceptibility of correlated electron systems. △ Less

Submitted 20 February, 2020; v1 submitted 24 September, 2018; originally announced September 2018.

Journal ref: Sci.Adv. 6 (2020) eaaz0611

Local excitons in silicon induced by SiGe quantum huts

Authors: Arka Bikash Dey, Milan K Sanyal, Swapnil Patil, Khadiza Ali, Deepnarayan Biswas, Sangeeta Thakur, Kalobaran Maiti

Abstract: Conversion of Si to a direct bandgap semiconductor for optoelectronic application is a great challenge for many decades. It is proposed that embedment of suitable sized quantum dots into silicon matrix may be exploited to convert silicon to a direct bandgap semiconductor. The other bottleneck to this outstanding issue is the identification of local excitons, a signature of direct bandgap property… ▽ More Conversion of Si to a direct bandgap semiconductor for optoelectronic application is a great challenge for many decades. It is proposed that embedment of suitable sized quantum dots into silicon matrix may be exploited to convert silicon to a direct bandgap semiconductor. The other bottleneck to this outstanding issue is the identification of local excitons, a signature of direct bandgap property and their comportment within the dots that can be utilized in engineering optoelectronic devices, quantum communications, etc. We studied the core level spectra of Si/Ge quantum huts embedded Si employing high resolution photoemission spectroscopy. Inverted quantum huts (IQHs) of Ge (13.3nm x 6.6nm) were grown on a Si buffer layer deposited on Si(001) surface using molecular beam epitaxy method and the photoemission experiments were carried out at different locations of the IQH structures exposed via controlled sputtering and annealing processes. We discover distinct features in the Ge 3$d$ core level spectra at the lower binging energy side of the bulk 3$d$ peak in contrast to the scenario of core level satellites often observed due to photoemission final state effects. The energy of these features are found to be sensitive to the location of the IQH structure probed revealing different core hole screening by the excitons located at different parts of IQHs. These results reveal local character of the excitons in the IQHs necessary for type I photoluminescence and establish core level spectroscopy as a direct probe of local excitons. These finding are expected to help amalgamation of microelectronics and solid state photonics important for optoelectronic applications. △ Less

Submitted 2 August, 2019; v1 submitted 7 September, 2018; originally announced September 2018.

Comments: 3 figures

Curvature correction to the field emission current

Authors: Debabrata Biswas, Rajasree Ramachandran

Abstract: The curvature of field emitter tips leads to an altered tunneling potential that assumes significance when the radius of curvature is small. We provide here an analytical curvature-corrected formula for the field emission current from smooth vertically aligned emitter tips and test its applicability across a range of apex radius, $R_a$, and local electric field, $E_a$. It is found to give excellen… ▽ More The curvature of field emitter tips leads to an altered tunneling potential that assumes significance when the radius of curvature is small. We provide here an analytical curvature-corrected formula for the field emission current from smooth vertically aligned emitter tips and test its applicability across a range of apex radius, $R_a$, and local electric field, $E_a$. It is found to give excellent results for $R_a > 10$nm with errors generally less than $10\%$. Surprisingly, for the uncorrected potential, we find the errors to be high even at $R_a = 100$nm ($ > 35\%$ at $E_a = 3$V/nm) and conclude that curvature correction is essential for apex radius less than a micron. △ Less

Submitted 30 July, 2018; originally announced July 2018.

Comments: 7 pages

Journal ref: Journal of Vacuum Science and Technology B 37, 021801 (2019)

Shielding effects in random large area field emitters, the field enhancement factor distribution and current calculation

Authors: Debabrata Biswas, Rashbihari Rudra

Abstract: A finite-size uniform random distribution of vertically aligned field emitters on a planar surface is studied under the assumption that the asymptotic field is uniform and parallel to the emitter axis. A formula for field enhancement factor is first derived for a 2-emitter system and this is then generalized for $N$-emitters placed arbitrarily (line, array or random). It is found that geometric ef… ▽ More A finite-size uniform random distribution of vertically aligned field emitters on a planar surface is studied under the assumption that the asymptotic field is uniform and parallel to the emitter axis. A formula for field enhancement factor is first derived for a 2-emitter system and this is then generalized for $N$-emitters placed arbitrarily (line, array or random). It is found that geometric effects dominate the shielding of field lines. The distribution of field enhancement factor for a uniform random distribution of emitter locations is found to be closely approximated by an extreme value (Gumbel-minimum) distribution when the mean separation is greater than the emitter height but is better approximated by a Gaussian for mean separations close to the emitter height. It is shown that these distributions can be used to accurately predict the current emitted from a large area field emitter. △ Less

Submitted 10 July, 2018; v1 submitted 18 May, 2018; originally announced May 2018.

Comments: 10 pages

Journal ref: Physics of Plasmas 25, 083105 (2018)

A universal formula for the field enhancement factor

Authors: Debabrata Biswas

Abstract: The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height $h$, the radius of curvature at the apex $R_a$, as well as the shape of the emitter base is still largely unknown. In this work, a universal formula for the field enhancement fact… ▽ More The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height $h$, the radius of curvature at the apex $R_a$, as well as the shape of the emitter base is still largely unknown. In this work, a universal formula for the field enhancement factor is derived. It depends on the ratio $h/R_a$ and has the form $γ_a = (2h/R_a)/[α_1 \log(4h/R_a) - α_2 ]$ where $α_1$, $α_2$ depend on the charge distribution on the emitter. Numerical results show that a simpler form $γ_a = (2h/R_a)/[\log(4h/R_a) - α]$ is equally valid with $α$ depending on the class of emitter and indicative of the shielding by the emitter-base. For the hyperboloid, conical and ellipsoid emitters, the value of $α$ is $0, 0.88$ and $2$ while for the cylindrical base where shielding is minimum, $α\simeq 2.6$. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Journal ref: Physics of Plasmas 25, 043113 (2018)

Field-emission from parabolic tips: current distributions, the net current and effective emission area

Authors: Debabrata Biswas

Abstract: Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of enhancement factor around the apex (Biswas et al, Ultramicroscopy 185, 1-4 (2018)), analytical expressions for surface distribution of net emitted electrons as well as the total and normal energy distributions are derived in terms of the apex radius $R_a$ and the local electri… ▽ More Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of enhancement factor around the apex (Biswas et al, Ultramicroscopy 185, 1-4 (2018)), analytical expressions for surface distribution of net emitted electrons as well as the total and normal energy distributions are derived in terms of the apex radius $R_a$ and the local electric field at the apex $E_a$. Formulae for the net emitted current and effective emission area in terms of these quantities are also obtained. △ Less

Submitted 20 March, 2018; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 8 pages

Journal ref: Physics of Plasmas 25 , 043105 (2018)

The tunneling potential for field emission from nanotips

Authors: Debabrata Biswas, Rajasree Ramachandran, Gaurav Singh

Abstract: In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field $E_0$ is expressed as $-e γE_0 Δs$ where $Δs$ is the perpendicular distance from the emission site and $γ$ is the local field enhancement factor on the surface of the emitter. We show that for curved emitter tips, the current density can be accurately computed if terms involving… ▽ More In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field $E_0$ is expressed as $-e γE_0 Δs$ where $Δs$ is the perpendicular distance from the emission site and $γ$ is the local field enhancement factor on the surface of the emitter. We show that for curved emitter tips, the current density can be accurately computed if terms involving $(Δs/R_2)^2$ and $(Δs/R_2)^3$ are incorporated in the potential where $R_2$ is the second (smaller) principle radius of curvature. The result is established analytically for the hemiellipsoid and hyperboloid emitters and it is found that for sharply curved emitters, the expansion coefficients are equal and coincide with that of a sphere. The expansion seems to be applicable to generic emitters as demonstrated numerically for an emitter with a conical base and quadratic tip. The correction terms in the potential are adequate for $R_a \gtrapprox 2$ nm for local field strengths of $5$ V/nm or higher. The result can also be used for nano-tipped emitter arrays or even a randomly placed bunch of sharp emitters. △ Less

Submitted 11 October, 2017; originally announced October 2017.

Comments: 9 pages, 6 figures

Journal ref: Physics of Plasmas 25, 013113 (2018)

Narrow-band anisotropic electronic structure of ReS$_2$

Authors: D. Biswas, A. M. Ganose, R. Yano, J. M. Riley, L. Bawden, O. J. Clark, J. Feng, L. Collins-Mcintyre, W. Meevasana, T. K. Kim, M. Hoesch, J. E. Rault, T. Sasagawa, D. O. Scanlon, P. D. C. King

Abstract: We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy o… ▽ More We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hop** along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along $k_z$. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS$_2$, and how it can be expected to evolve when thinned to a single layer. △ Less

Submitted 14 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 96, 085205 (2017)

Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides

Authors: M. S. Bahramy, O. J. Clark, B. -J. Yang, J. Feng, L. Bawden, J. M. Riley, I. Marković, F. Mazzola, V. Sunko, D. Biswas, S. P. Cooil, M. Jorge, J. W. Wells, M. Leandersson, T. Balasubramanian, J. Fujii, I. Vobornik, J. E. Rault, T. K. Kim, M. Hoesch, K. Okawa, M. Asakawa, T. Sasagawa, T. Eknapakul, W. Meevasana , et al. (1 additional authors not shown)

Abstract: Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied properties. They range from metals and superconductors to strongly spin-orbit-coupled semiconductors and charge-density-wave systems, with their single-layer variants one of the most prominent current examples of two-dimensional materials beyond graphene. Their varied ground states largely depend on the transition metal… ▽ More Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied properties. They range from metals and superconductors to strongly spin-orbit-coupled semiconductors and charge-density-wave systems, with their single-layer variants one of the most prominent current examples of two-dimensional materials beyond graphene. Their varied ground states largely depend on the transition metal d-electron-derived electronic states, on which the vast majority of attention has been concentrated to date. Here, we focus on the chalcogen-derived states. From density-functional theory calculations together with spin- and angle- resolved photoemission, we find that these generically host type-II three-dimensional bulk Dirac fermions as well as ladders of topological surface states and surface resonances. We demonstrate how these naturally arise within a single p-orbital manifold as a general consequence of a trigonal crystal field, and as such can be expected across a large number of compounds. Already, we demonstrate their existence in six separate TMDs, opening routes to tune, and ultimately exploit, their topological physics. △ Less

Submitted 19 July, 2018; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 10 pages, 4 figures

Journal ref: Nature Materials 17, 21-28 (2018) (DOI 10.1038/nmat5031)

Size and density controlled metal nanocluster embedded metal-oxide-semiconductor structure for memory applications

Authors: Debaleen Biswas, Shyamal Mondal, Satyaranjan Bhattacharyya, Supratic Chakraborty

Abstract: Metal-nanoclusters (NC), deposited by magnetron-based nanocluster source coupled with quadrupole mass filter (QMF) assembly having independent control over its size and density, are used in fabricating NC-based non-volatile memory (NVM) devices. The effect of diameter and density on the NVM charge storage characteristics are presented where Ag is used as the metal NC. The Ag-NC, sandwiched between… ▽ More Metal-nanoclusters (NC), deposited by magnetron-based nanocluster source coupled with quadrupole mass filter (QMF) assembly having independent control over its size and density, are used in fabricating NC-based non-volatile memory (NVM) devices. The effect of diameter and density on the NVM charge storage characteristics are presented where Ag is used as the metal NC. The Ag-NC, sandwiched between HfO$_2$ tunnel and control oxides, is deposited by using the combination of the above two instruments. No annealing is performed at any stage of the device fabrication. The largest hysteresis loop area in the capacitance-voltage ($C-V$) characteristics of metal-oxide-semiconductor (MOS) characteristics is observed for a cluster density of 1 $\times$ 10$^{11}$ cm$^{-2}$. Further, an NC size dependent hysteresis loop area is observed with the MOS devices where the NC diameter is varied from 3 to 1.5 nm kee** the NC density at 1 $\times$ 10$^{11}$ cm$^{-2}$. The device performance is found to be improved with a reduction of the NC size and shows its best with the NC diameter of 1.5 nm. The storage time of the NVM devices also increases with the decrease in the NC diameter and exhibits their best performances for the NCs with a diameter of 1.5 nm. △ Less

Submitted 6 September, 2016; originally announced September 2016.