Showing 1–50 of 104 results for author: Bibes, M

Unraveling p-type and n-type interfaces in Superconducting Infinite-Layer Nickelate thin films

Authors: Aravind Raji, Araceli Gutiérrez-Llorente, Dongxin Zhang, Xiaoyan Li, Manuel Bibes, Lucia Iglesias, Jean-Pascal Rueff, Alexandre Gloter

Abstract: After decades of research, superconductivity was finally found in nickel-based analogs of superconducting cuprates, with infinite-layer (IL) structure. These results are so far restricted to thin films in the case of IL-nickelates. Therefore, the nature of the interface with the substrate, and how it couples with the thin film properties is still an open question. Here, using scanning transmission… ▽ More After decades of research, superconductivity was finally found in nickel-based analogs of superconducting cuprates, with infinite-layer (IL) structure. These results are so far restricted to thin films in the case of IL-nickelates. Therefore, the nature of the interface with the substrate, and how it couples with the thin film properties is still an open question. Here, using scanning transmission electron microscopy (STEM)- electron energy loss spectroscopy (EELS) and four-dimensional (4D)-STEM, a novel chemically sharp p-type interface is observed in a series of superconducting IL-praseodymium nickelate samples, and a comparative study is carried out with the previously reported n-type interface obtained in other samples. Both interfaces have strong differences, with the p-type interface being highly polar. In combination with ab-initio calculations, we find that the influence of the interface on the electronic structure is local, and does not extend beyond 2-3 unit cells into the thin film. This decouples the direct influence of the interface in driving the superconductivity, and indicates that the IL-nickelate thin films do not have a universal interface model. Insights into the spatial hole-distribution in SC samples, provided by monochromated EELS and total reflection-hard x-ray photoemission spectroscopy, suggest that this particular distribution might be directly influencing superconductivity. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Towards reliable synthesis of superconducting infinite layer nickelate thin films by topochemical reduction

Authors: Araceli Gutiérrez-Llorente, Aravind Raji, Dongxin Zhang, Laurent Divay, Alexandre Gloter, Fernando Gallego, Christophe Galindo, Manuel Bibes, Lucia Iglesias

Abstract: Infinite layer nickelates provide a new route beyond copper oxides to address outstanding questions in the field of unconventional superconductivity. However, their synthesis poses considerable challenges, largely hindering experimental research on this new class of oxide superconductors. That synthesis is achieved in a two-step process that yields the most thermodynamically stable perovskite phas… ▽ More Infinite layer nickelates provide a new route beyond copper oxides to address outstanding questions in the field of unconventional superconductivity. However, their synthesis poses considerable challenges, largely hindering experimental research on this new class of oxide superconductors. That synthesis is achieved in a two-step process that yields the most thermodynamically stable perovskite phase first, then the infinite-layer phase by topotactic reduction, the quality of the starting phase playing a crucial role. Here, we report on reliable synthesis of superconducting infinite-layer nickelate films after successive topochemical reductions of a parent perovskite phase with nearly optimal stoichiometry. Careful analysis of the transport properties of the incompletely reduced films reveals an improvement of the strange metal behaviour of their normal state resistivity over subsequent topochemical reductions, offering insight into the reduction process. △ Less

Submitted 15 March, 2024; v1 submitted 22 January, 2024; originally announced January 2024.

Comments: 26 pages; 25 figures. Results unchanged; supplemental figures added; references added

Electron-phonon mediated superconductivity in R$_6$Ni$_5$O$_{12}$ nickel oxides

Authors: Alvaro Adrian Carrasco Alvarez, Sebastien Petit, Lucia Iglesias, Manuel Bibes, Wilfrid Prellier, Julien Varignon

Abstract: Nickel oxide superconductors offer an alternative playground for understanding the formation of Cooper pairs in correlated materials such as the famous cuprates. By studying the La$_{n+1}$Ni$_n$O$_{2n+2}$ phase diagram on the basis of hybrid and spin-polarized density functional theory simulations, we reveal the existence of charge and bond ordered (CBO) insulating phases that are quenched by dopi… ▽ More Nickel oxide superconductors offer an alternative playground for understanding the formation of Cooper pairs in correlated materials such as the famous cuprates. By studying the La$_{n+1}$Ni$_n$O$_{2n+2}$ phase diagram on the basis of hybrid and spin-polarized density functional theory simulations, we reveal the existence of charge and bond ordered (CBO) insulating phases that are quenched by do** effects, ultimately resulting in a metallic phase at the $n=5$ member. Nevertheless, the phonons associated with the CBO identified in the phase diagram remain sufficiently large to mediate Cooper pairs in La$_6$Ni$_5$O$_{12}$, yielding a computed critical temperature between $T_c=11-19$ K consistent with the 13 K observed experimentally in Nd$_6$Ni$_5$O$_{12}$. Thus, in order to identify the superconducting mechanism, extracting the relevant instabilities in the do** phase diagram of superconductors appears critical. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Electrical control of magnetism by electric field and current-induced torques

Authors: Albert Fert, Ramamoorthy Ramesh, Vincent Garcia, Fèlix Casanova, Manuel Bibes

Abstract: While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferroma… ▽ More While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferromagnet. This discovery drove the development of spin-transfer-torque magnetic random-access memories (STT-MRAMs). More recent research unveiled spin-orbit-torques (SOTs) and will lead to a new generation of devices including SOT-MRAMs. Parallel to these advances, multiferroics and their magnetoelectric coupling experienced a renaissance, leading to novel device concepts for information and communication technology such as the MESO transistor. The story of the electrical control of magnetization is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO, microwave emitters, spin-diodes, skyrmion-based devices, components for neuromorphics, etc). This pas de deux led to major breakthroughs over the last decades (pure spin currents, magnetic skyrmions, spin-charge interconversion, etc). As a result, this field has propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, we cover recent advances in the control of magnetism by electric fields and by current-induced torques. We first review fundamental concepts in these two directions, then discuss their combination, and finally present various families of devices harnessing the electrical control of magnetic properties for various application fields. We conclude by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: Final version accepted for publication in Reviews of Modern Physics

Electronic bandstructure of superconducting KTaO3 (111) interfaces

Authors: Srijani Mallik, Börge Göbel, Hugo Witt, Luis M. Vicente-Arche, Sara Varotto, Julien Bréhin, Gerbold Ménard, Guilhem Saïz, Dyhia Tamsaout, Andrés Felipe Santander-Syro, Franck Fortuna, François Bertran, Patrick Le Fèvre, Julien Rault, Isabella Boventer, Ingrid Mertig, Agnès Barthélémy, Nicolas Bergeal, Annika Johansson, Manuel Bibes

Abstract: Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient… ▽ More Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Boosting the Edelstein effect of two-dimensional electron gases by ferromagnetic exchange

Authors: Gabriel Lazrak, Börge Göbel, Agnès Barthélémy, Ingrid Mertig, Annika Johansson, Manuel Bibes

Abstract: Strontium titanate (SrTiO$_3$) two-dimensional electron gases (2DEGs) have broken spatial inversion symmetry and possess a finite Rashba spin-orbit coupling. This enables the interconversion of charge and spin currents through the direct and inverse Edelstein effects, with record efficiencies at low temperature, but more modest effects at room temperature. Here, we show that making these 2DEGs fer… ▽ More Strontium titanate (SrTiO$_3$) two-dimensional electron gases (2DEGs) have broken spatial inversion symmetry and possess a finite Rashba spin-orbit coupling. This enables the interconversion of charge and spin currents through the direct and inverse Edelstein effects, with record efficiencies at low temperature, but more modest effects at room temperature. Here, we show that making these 2DEGs ferromagnetic enhances the conversion efficiency by nearly one order of magnitude. Starting from the experimental band structure of non-magnetic SrTiO$_3$ 2DEGs, we mimic magnetic exchange coupling by introducing an out-of-plane Zeeman term in a tight-binding model. We then calculate the band structure and spin textures for increasing internal magnetic fields and compute the Edelstein effect using a semiclassical Boltzmann approach. We find that the conversion efficiency first increases strongly with increasing magnetic field, then shows a maximum and finally decreases. This field dependence is caused by the competition of the exchange coupling with the effective Rashba interaction. While enhancing the splitting of band pairs amplifies the Edelstein effect, weakening the in-plane Rashba-type spin texture reduces it. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces

Authors: Julien Bréhin, Luis M. Vicente Arche, Sara Varotto, Srijani Mallik, Jean-Philippe Attané, Laurent Vila, Agnès Barthélémy, Nicolas Bergeal, Manuel Bibes

Abstract: The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashb… ▽ More The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO$_3$ 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics. △ Less

Submitted 2 October, 2023; originally announced October 2023.

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

Authors: Fernando Gallego, Felix Trier, Srijani Mallik, Julien Bréhin, Sara Varotto, Luis Moreno Vicente-Arche, Tanay Gosavy, Chia-Ching Lin, Jean-René Coudevylle, Lucía Iglesias, Félix Casanova, Ian Young, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp… ▽ More The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pum** experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Spin-Hall Current and Nonlocal Transport in Ferromagnet-Free Multi-band models for SrTiO3-Based Nanodevices in the presence of impurities

Authors: Domenico Giuliano, Andrea Nava, Carmine Antonio Perroni, Manuel Bibes, Felix Trier, Marco Salluzzo

Abstract: We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a systematic calculation of the impurity contributions to the self-energy, as well as to the vertex corrections of the relevant diagrams, we recover the full spin-Hall… ▽ More We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a systematic calculation of the impurity contributions to the self-energy, as well as to the vertex corrections of the relevant diagrams, we recover the full spin-Hall vs. sheet conductance dependence of LaAlO3/SrTiO3 as reported in Trier et al. [Nano Lett. 20, 395 (2020)], finding a very good agreement with the experimental data below and above the Lifshitz transition. In particular, we demonstrate that the multiband electronic structure leads to only a partial, instead of a complete, screening of the spin-Hall conductance, which decreases with increasing the carrier density. Our method can be generalized to other two-dimensional systems characterized by a broken inversion symmetry and multiband physics. △ Less

Submitted 17 August, 2023; v1 submitted 29 May, 2023; originally announced May 2023.

Comments: 22 pages, 12 .eps figures

Journal ref: Physical Review B 108, 075418 (2023)

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel… ▽ More With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 17 pages, 5 figures

Charge ordering as the driving mechanism for superconductivity in rare-earth nickel oxides

Authors: Álvaro Adrián Carrasco Álvarez, Lucia Iglesias, Sébastien Petit, Wilfrid Prellier, Manuel Bibes, Julien Varignon

Abstract: Superconductivity is one of the most intriguing properties of matter described by an attractive interaction that bounds electrons into Cooper pairs. To date, the highest critical temperature at ambient conditions is achieved in copper oxides. While layered nickel oxides were long proposed to be analogous to cuprates, superconductivity was only demonstrated in 2019 albeit without clarifying the pai… ▽ More Superconductivity is one of the most intriguing properties of matter described by an attractive interaction that bounds electrons into Cooper pairs. To date, the highest critical temperature at ambient conditions is achieved in copper oxides. While layered nickel oxides were long proposed to be analogous to cuprates, superconductivity was only demonstrated in 2019 albeit without clarifying the pairing mechanism. Here we use Density Functional Theory (DFT) to show that superconductivity in nickelates is driven by an electron-phonon coupling originating from a charge ordering. Due to an intrinsic electronic instability in half-doped compounds, Ni$^{1.5+}$ cations dismutate into more stable Ni$^+$ and Ni$^{2+}$ cations, which is accompanied by a bond disproportionation of NiO$_4$ complexes producing an insulating charge ordered state. Once do** suppresses the instability, the bond disproportionation vibration is sufficient to reproduce the key characteristic of nickelates observed experimentally, notably the dome of T$_c$ as a function of do** content. These phenomena are identified if relevant degrees of freedom as well as an exchange correlation functional that sufficiently amends self-interaction errors are involved in the simulations. Finally, despite the presence of correlation effects inherent to $3d$ elements, nickelates superconductors appear similar to non-magnetic bismuth oxide superconductors. △ Less

Submitted 22 November, 2023; v1 submitted 9 November, 2022; originally announced November 2022.

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Authors: Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault

Abstract: Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst… ▽ More Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Patterning of superconducting two-dimensional electron gases based on AlO$_x$/KTaO$_3$(111) interfaces

Authors: Hugo Witt, Srijani Mallik, Luis M. Vicente-Arche, Gerbold Ménard, Guilhem Saïz, Daniela Storniauolo, Maria D'Antuono, Isabella Boventer, Nicolas Bergeal, Manuel Bibes

Abstract: The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher tha… ▽ More The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher than that of SrTiO$_3$-based 2DEGs. Just as in SrTiO$_3$-based 2DEGs, fabricating devices in this new system is a technical challenge due to the fragility of the 2DEG and the propensity of bulk KTaO$_3$ to become conducting outside the devices upon adventitious oxygen vacancy do**. Here, we present three different techniques for patterning Hall bars in AlO$_x$/KTaO$_3$~(111) heterostructures. The devices show superconducting transitions ranging from 1.3 K to 1.78 K, with limited degradation from the unpatterned thin film, and enable an efficient tuning of the carrier density by electric field effect. The array of techniques allows for the definition of channels with a large range of dimensions for the design of various kinds of devices to explore the properties of this system down to the nanoscale. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces

Authors: Sara Varotto, Annika Johansson, Börge Göbel, Luis M. Vicente-Arche, Srijani Mallik, Julien Bréhin, Raphaël Salazar, François Bertran, Patrick Le Fèvre, Nicolas Bergeal, Julien Rault, Ingrid Mertig, Manuel Bibes

Abstract: Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan… ▽ More Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Authors: Conor J. McCluskey, Matthew G. Colbear, James P. V. McConville, Shane J. McCartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymond G. P. McQuaid, J. Marty Gregg

Abstract: Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the d… ▽ More Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm2V-1s-1. This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 22 pages main text, 24 pages supplementary information. Published in advanced materials, DOI:https://doi.org/10.1002/adma.202204298

A multiferroic two-dimensional electron gas

Authors: Julien Bréhin, Yu Chen, Maria D'Antuono, Sara Varotto, Daniela Stornaiuolo, Cinthia Piamonteze, Julien Varignon, Marco Salluzzo, Manuel Bibes

Abstract: Multiferroics are compounds in which at least two ferroic orders coexist - typically (anti)ferromagnetism and ferroelectricity. While magnetic order can arise in both insulating and conducting compounds, ferroelectricity is in principle not allowed in metals although a few two-dimensional (semi)metals were reported to behave as ferroelectrics. Yet, the combination with magnetic order to realize mu… ▽ More Multiferroics are compounds in which at least two ferroic orders coexist - typically (anti)ferromagnetism and ferroelectricity. While magnetic order can arise in both insulating and conducting compounds, ferroelectricity is in principle not allowed in metals although a few two-dimensional (semi)metals were reported to behave as ferroelectrics. Yet, the combination with magnetic order to realize multiferroic metals remains elusive. Here, by combining x-ray spectroscopy and magnetotransport, we show the coexistence of ferroelectricity and magnetism in an oxide-based two-dimensional electron gas (2DEG). The data evidence a non-volatile switching of the polar displacements and of the anomalous Hall effect by the polarization direction, demonstrating a magnetoelectric coupling. Our findings provide new opportunities in quantum matter stemming from the interplay between ferroelectricity, ferromagnetism and Rashba spin-orbit coupling in a 2DEG. △ Less

Submitted 8 June, 2022; originally announced June 2022.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Authors: Cécile Grezes, Aurélie Kandazoglou, Maxen Cosset-Cheneau, Luis Arche, Paul Noël, Paolo Sgarro, Stephane Auffret, Kevin Garello, Manuel Bibes, Laurent Vila, Jean-Philippe Attané

Abstract: Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs usi… ▽ More Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Superfluid stiffness of a KTaO3-based two-dimensional electron gas

Authors: S. Mallik, G. Ménard, G. Saïz, H. Witt, J. Lesueur, A. Gloter, L. Benfatto, M. Bibes, N. Bergeal

Abstract: After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the field of oxides interfaces. However, while both interfaces share common properties, experiments also suggest important differences between the two systems. Here,… ▽ More After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the field of oxides interfaces. However, while both interfaces share common properties, experiments also suggest important differences between the two systems. Here, we report gate tunable superconductivity in 2-DEGs generated at the surface of a (111)-oriented KTaO3 crystal by the simple sputtering of a thin Al layer. We use microwave transport to show that (111)-KTaO3 2-DEGs exhibit a node-less superconducting order parameter with a gap value significantly larger than expected within a simple BCS weak-coupling limit model. Consistent with the two-dimensional nature of superconductivity, we evidence a well-defined Berezinsky-Kosterlitz-Thouless type of transition, which was not reported on SrTiO3-based interfaces. Our finding offers innovative perspectives for fundamental science but also for device applications in a variety of fields such as spin-orbitronics and topological electronics. △ Less

Submitted 19 April, 2022; originally announced April 2022.

Thin-film aspects of superconducting nickelates

Authors: F. Bernardini, L. Iglesias, M. Bibes, A. Cano

Abstract: The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thi… ▽ More The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thin films so far. At the same time, the specifics of infinite-layer nickelates yield distinct interface and surface effects that determine their bulk vs thin-film behavior. In this paper, we provide an overview on these important aspects. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Comments: 6 pages, 2 figures. Front. Phys.

Journal ref: Front. Phys. 10:828007 (2022)

Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling

Authors: D. Q. To, T. H. Dang, L. Vila, J. P. Attané, M. Bibes, H. Jaffrès

Abstract: Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba… ▽ More Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data. △ Less

Submitted 8 January, 2022; originally announced January 2022.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. Research 3, 043170 (2021)

Structural instabilities of infinite-layer nickelates from first-principles simulations

Authors: Álvaro Adrián Carrasco Álvarez, Sébastien Petit, Lucia Iglesias, Wilfrid Prellier, Manuel Bibes, Julien Varignon

Abstract: Rare-earth nickelates RNiO$_2$ adopting an infinite-layer phase show superconductivity once La, Pr or Nd are substituted by a divalent cation. Either in the pristine or doped form, these materials are reported to adopt a high symmetry, perfectly symmetric, P4/mmm tetragonal cell. Nevertheless, bulk compounds are scarce, hindering a full understanding of the role of chemical pressure or strain on l… ▽ More Rare-earth nickelates RNiO$_2$ adopting an infinite-layer phase show superconductivity once La, Pr or Nd are substituted by a divalent cation. Either in the pristine or doped form, these materials are reported to adopt a high symmetry, perfectly symmetric, P4/mmm tetragonal cell. Nevertheless, bulk compounds are scarce, hindering a full understanding of the role of chemical pressure or strain on lattice distortions that in turn could alter magnetic and electronic properties of the 2D nickelates. Here, by performing a full analysis of the prototypical YNiO$_2$ compound with first-principles simulations, we identify that these materials are prone to exhibit O$_4$ group rotations whose type and amplitude are governed by the usual R-to-Ni cation size mismatch. We further show that these rotations can be easily tuned by external stimuli modifying lattice parameters such as pressure or strain. Finally, we reveal that H intercalation is favored for any infinite-layer nickelate member and pushes the propensity of the compounds to exhibit octahedra rotations. △ Less

Submitted 5 December, 2021; originally announced December 2021.

Journal ref: Physical Review Research 4, 023064 (2022)

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Authors: ** Hong Lee, Takayuki Harada, Felix Trier, Lourdes Marcano, Florian Godel, Sergio Valencia, Atsushi Tsukazaki, Manuel Bibes

Abstract: Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivitie… ▽ More Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials. △ Less

Submitted 29 September, 2021; originally announced September 2021.

Comments: Accepted in Nano Lett

Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces

Authors: Fryderyk Lyzwa, Yurii G. Pashkevich, Premysl Marsik, Andrei Sirenko, Andrew Chan, Benjamin P. P. Mallett, Meghdad Yazdi-Rizi, Bing Xu, Luis M. Vicente-Arche, Diogo C. Vaz, Gervasi Herranz, Maximilien Cazayous, Pierre Hemme, Katrin Fürsich, Matteo Minola, Bernhard Keimer, Manuel Bibes, Christian Bernhard

Abstract: The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined e… ▽ More The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined electrons as well as the mechanisms that govern the interfacial electric field. Here we use infrared ellipsometry and confocal Raman spectroscopy to show that an anomalous polar moment is induced at the interface that is non-collinear, highly asymmetric and hysteretic with respect to the vertical gate electric field. Our data indicate that an important role is played by the electromigration of oxygen vacancies and their clustering at the antiferrodistortive domain boundaries of SrTiO3, which generates local electric and possibly also flexoelectric fields and subsequent polar moments with a large lateral component. Our results open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various other parameters, like strain, temperature, or photons. △ Less

Submitted 14 September, 2021; originally announced September 2021.

Journal ref: Communications Physics 5, 133 (2022)

From low-field Sondheimer oscillations to high-field very large and linear magnetoresistance in a SrTiO$_3$-based two-dimensional electron gas

Authors: Srijani Mallik, Gerbold C. Ménard, Guilhem Saiz, Alexandre Gloter, Nicolas Bergeal, Marc Gabay, Manuel Bibes

Abstract: Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl semi-metals to topological insulators. Its origin is often ascribed to unusual band structure effects but it may also be caused by extrinsic sample disorder. Here, we… ▽ More Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl semi-metals to topological insulators. Its origin is often ascribed to unusual band structure effects but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO$_3$ two-dimensional electron gas and, by combining transport measurements with electron spectro-microscopy, show that it is caused by nanoscale inhomogeneities that are self-organized during sample growth. Our data also reveal semi-classical Sondheimer oscillations arising from interferences between helicoidal electron trajectories, from which we determine the 2DEG thickness. Our results bring insight into the origin of linear MR in quantum materials, expand the range of functionalities of oxide 2DEGs and suggest exciting routes to explore the interaction of linear MR with features like Rashba spin-orbit coupling. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pum** experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Voltage-Controlled Reconfigurable Magnonic Crystal at the Submicron Scale

Authors: Hugo Merbouche, Isabella Boventer, Victor Haspot, Stephan Fusil, Vincent Garcia, Diane Gouere, Cecile Carretero, Aymeric Vecchiola, Romain Lebrun, Paolo Bortolotti, Laurent Vila, Manuel Bibes, Agnes Barthelemy, Abdelmadjid Anane

Abstract: Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventual… ▽ More Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection. △ Less

Submitted 16 May, 2021; originally announced May 2021.

Origin of the dome-shaped superconducting phase diagram in $\mathrm{SrTiO}_3$-based interfaces

Authors: A. Jouan, S. Hurand, G. Singh, E. Lesne, A. Barthélémy, M. Bibes, C. Ulysse, G. Saiz, C. Feuillet-Palma, J. Lesueur, N. Bergeal

Abstract: A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the supercondu… ▽ More A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the superconducting phase diagram of these oxide interfaces based on Schrödinger-Poisson numerical simulations of the quantum well and transport experiments on a double-gate field-effect device. We propose that the optimal do** point of maximum $T_c$ marks the transition between a single-band and a fragile two-gap s$\pm$-wave superconducting state involving $t_{2g}$ bands of different orbital character. At the optimal do** point, we predict and observe experimentally a bifurcation in the dependence of $T_c$ on the carrier density, which is controlled by the details of the do** execution. Where applying a back-gate voltage triggers the filling of a high-energy $d_\mathrm{xy}$ subband and initiates the overdoped regime, do** with a top-gate delays the filling of the subband and maintains the 2-DEG in the single-band superconducting state of higher $T_c$. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 9 pages, 7 figures

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Authors: Felix Trier, Paul Noël, Joo-Von Kim, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and… ▽ More Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Comments: Submitted to Nature Reviews Materials

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

Authors: Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Sławińska, Paul Noël, Simone Petrò, Federico Fagiani, Alessandro Novati, Matteo Cantoni, Daniela Petti, Edoardo Albisetti, Marcio Costa, Raffaella Calarco, Marco Buongiorno Nardelli, Manuel Bibes, Silvia Picozzi, Jean-Philippe Attané, Laurent Vila, Riccardo Bertacco, Christian Rinaldi

Abstract: Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit… ▽ More Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material. △ Less

Submitted 13 March, 2021; originally announced March 2021.

Comments: 21 pages, 4 figures

Journal ref: Nature Electronics volume 4, 740 (2021)

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

Authors: Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o… ▽ More SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pum** ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Materials 5, 064005 (2021)

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, ** Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

First-principles study of electron and hole do** in perovskite nickelates

Authors: Lucia Iglesias, Manuel Bibes, Julien Varignon

Abstract: Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly identified infinite layer RNiO2 superconductors. Although intensive theoretical works have been devoted to understand the origin of the metal-insulator transition in… ▽ More Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly identified infinite layer RNiO2 superconductors. Although intensive theoretical works have been devoted to understand the origin of the metal-insulator transition in the bulk, there have only been a few studies on the role of hole and electron do** by rare-earth substitutions in RNiO$_3$ materials. Using first-principles calculations based on density functional theory (DFT) we study the effect of hole and electron do** in a prototypical nickelate SmNiO3. We perform calculations without Hubbard-like U potential on Ni 3d levels but with a meta-GGA better amending self-interaction errors. We find that at low do**, polarons form with intermediate localized states in the band gap resulting in a semiconducting behavior. At larger do**, the intermediate states spread more and more in the band gap until they merge either with the valence (hole do**) or the conduction (electron do**) band, ultimately resulting in a metallic state at 25% of R cation substitution. These results are reminiscent of experimental data available in the literature and demonstrate that DFT simulations without any empirical parameter are qualified for studying do** effects in correlated oxides and to explore the mechanisms underlying the superconducting phase of rare-earth nickelates. △ Less

Submitted 5 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 104, 035123 (2021)

Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy

Authors: T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. -M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. Dhillon, H. Jaffrès

Abstract: Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv… ▽ More Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pum** measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pum** for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion. △ Less

Submitted 12 December, 2020; originally announced December 2020.

Comments: 20 pages

Journal ref: Applied Physics Reviews 7, 041409 (2020)

Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer

Authors: I. Gross, W. Akhtar, V. Garcia, L. J. Martínez, S. Chouaieb, K. Garcia, C. Carrétéro, A. Barthélémy, P. Appel, P. Maletinsky, J. -V. Kim, J. Y. Chauleau, N. Jaouen, M. Viret, M. Bibes, S. Fusil, V. Jacques

Abstract: While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and t… ▽ More While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or produce emergent spin-orbit effects, which enable efficient spin-charge interconversion. To harness these unique traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive scanning nanomagnetometer based on a single nitrogen-vacancy (NV) defect in diamond, we demonstrate the first real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film, at room temperature. We image the spin cycloid of a multiferroic BiFeO$_3$ thin film and extract a period of $\sim70$ nm, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO$_3$ to manipulate the cycloid propagation direction by an electric field. Besides highlighting the unique potential of NV magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO$_3$ can be used as a versatile platform for the design of reconfigurable nanoscale spin textures. △ Less

Submitted 24 November, 2020; originally announced November 2020.

Journal ref: Nature 549, 252-256 (2017)

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Authors: D. C. Vaz, F. Trier, A. Dyrdał, A. Johansson, K. Garcia, A. Barthélémy, I. Mertig, J. Barnaś, A. Fert, M. Bibes

Abstract: Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is ex… ▽ More Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on July 2, 2020 as Phys. Rev. Materials 4, 071001(R) (2020)

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Authors: Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, Manuel Bibes

Abstract: Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern… ▽ More Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on April 16, 2020 as Phys. Rev. Materials 4, 041002(R) (2020)

Spin and orbital Edelstein effect in an oxide two-dimensional electron gas: theory and application to AlO$_x$/SrTiO$_{3}$

Authors: Annika Johansson, Börge Göbel, Jürgen Henk, Manuel Bibes, Ingrid Mertig

Abstract: The Edelstein effect provides the purely electrical generation and control of a homogeneous magnetization in primarily nonmagnetic materials with broken inversion symmetry. Usually, only the spin density response to an external electric field is discussed. Here, we report on the electrically induced magnetization containing spin as well as orbital contributions in the topological oxide two-dimensi… ▽ More The Edelstein effect provides the purely electrical generation and control of a homogeneous magnetization in primarily nonmagnetic materials with broken inversion symmetry. Usually, only the spin density response to an external electric field is discussed. Here, we report on the electrically induced magnetization containing spin as well as orbital contributions in the topological oxide two-dimensional electron gas at the interface between SrTiO$_3$ and AlO. We find that in this particular system the orbital Edelstein effect exceeds the spin Edelstein effect by more than one order of magnitude. The main reason are orbital moments of different magnitude in the Rashba-like-split band pairs. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Research 3, 013275 (2021)

Electron-polaron dichotomy of charge carriers in perovskite oxides

Authors: Marius-Adrian Husanu, Lorenzo Vistoli, Carla Verdi, Anke Sander, Vincent Garcia, Julien Rault, Federico Bisti, Leonid L. Lev, Thorsten Schmitt, Feliciano Giustino, Andrey S. Mishchenko, Manuel Bibes, Vladimir N. Strocov

Abstract: Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute do** in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,… ▽ More Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute do** in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs. △ Less

Submitted 15 April, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: Accepted manuscript to Communications Physics 3, 62 (2020)

Journal ref: Communications Physics 3, 62 (2020)

A journey into the tuneable antiferromagnetic spin textures of BiFeO3

Authors: A. Haykal, J. Fischer, W. Akhtar, J. -Y. Chauleau, D. Sando, A. Finco, C. Carretero, N. Jaouen, M. Bibes, M. Viret, S. Fusil, V. Jacques, V. Garcia

Abstract: Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and ma… ▽ More Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand. △ Less

Submitted 28 December, 2019; originally announced December 2019.

Giant topological Hall effect in correlated oxide thin films

Authors: Lorenzo Vistoli, Wenbo Wang, Anke Sander, Qiuxiang Zhu, Blai Casals, Rafael Cichelero, Agnès Barthélémy, Stéphane Fusil, Gervasi Herranz, Sergio Valencia, Radu Abrudan, Eugen Weschke, Kazuki Nakazawa, Hiroshi Kohno, Jacobo Santamaria, Weida Wu, Vincent Garcia, Manuel Bibes

Abstract: Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in t… ▽ More Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low do**, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Comments: Contact author for a reprint of the final version published in Nature Physics

Journal ref: Nature Physics 15, 67 (2019)

Factors limiting ferroelectric field-effect do** in complex-oxide heterostructures

Authors: L. Bégon-Lours, V. Rouco, Qiao Qiao, A. Sander, M. A. Roldán, R. Bernard, J. Trastoy, A. Crassous, E. Jacquet, K. Bouzehouane, M. Bibes, J. Santamaría, A. Barthélémy, M. Varela, Javier E. Villegas

Abstract: Ferroelectric field-effect do** has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect do** is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission… ▽ More Ferroelectric field-effect do** has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect do** is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission electron and piezo-response force microscopy in ferroelectric/superconductor (YBa2Cu3O7-δ /BiFeO3) heterostructures, a model system showing very strong field-effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier do** is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field-effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g. charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field-effects and for the strategies to further enhance them. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Materials 2, 084405 (2018)

Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites

Authors: Julien Varignon, Manuel Bibes, Alex Zunger

Abstract: The Jahn-Teller (JT) distortion that can remove electronic degeneracies in partially occupied states and results in systematic atomic displacements is a common underlying feature to many of the intriguing phenomena observed in 3d perovskites, encompassing magnetism, superconductivity, orbital ordering and colossal magnetoresistance. Although the seminal Jahn and Teller theorem has been postulated… ▽ More The Jahn-Teller (JT) distortion that can remove electronic degeneracies in partially occupied states and results in systematic atomic displacements is a common underlying feature to many of the intriguing phenomena observed in 3d perovskites, encompassing magnetism, superconductivity, orbital ordering and colossal magnetoresistance. Although the seminal Jahn and Teller theorem has been postulated almost a century ago, the origins of this effect in perovskite materials are still debated, including propositions such as super exchange, spin-phonon coupling, sterically induced lattice distortions, and strong dynamical correlation effects. Here we analyze the driving forces behind the Jahn-Teller motions and associated electronic fingerprints in a full range of ABX3 compounds. We identify (i) compounds that are prone to an electronically-driven instabilities (i.e. a pure JT effect) such as KCrF3, KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively the JTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 or LaTiO3 that do not show electronically driven JTD despite orbital degeneracies, because their strongly hybridized B, d-X, p states supply but too weak JT forces to overcome the needed atomic distortions; (iii) although LaVO3 exhibits similar B, d-X, p hybridizations as LaTiO3, the former compound exhibits a robust electronic instability while LaTiO3 has zero stabilization energy, the reason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just one t2g1. (iv) We explain the trends in "orbital ordering" whereby electrons occupy orbitals that point to orthogonal directions between all nearest-neighbor 3d atoms. We thereby provide a unified vision to explain octahedra deformations in perovskites that, at odds with common wisdom, does not require the celebrated Mott-Hubbard mechanism. △ Less

Submitted 30 July, 2019; v1 submitted 18 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Research 1, 033131 (2019)

Negligible thermal contributions to the spin pum** signal in ferromagnetic metal-Platinum bilayers

Authors: Paul Noël, Maxen Cosset-Cheneau, Victor Haspot, Vincent Maurel, Christian Lombard, Manuel Bibes, Agnès Barthelemy, Laurent Vila, Jean-Philippe Attané

Abstract: Spin pum** by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pum**. He… ▽ More Spin pum** by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pum**. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pum** signals, by combining bolometry and spin pum** by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on Pt\Permalloy and La0.7Sr0.3MnO3\Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance △ Less

Submitted 13 April, 2020; v1 submitted 2 May, 2019; originally announced May 2019.

Comments: 5 figures

Quantized conductance in a one-dimensional ballistic oxide nanodevice

Authors: A. Jouan, G. Singh, E. Lesne, D. C. Vaz, M. Bibes, A. Barthélémy, C. Ulysse, D. Stornaiuolo, M. Salluzzo, S. Hurand, J. Lesueur, C. Feuillet-Palma, N. Bergeal

Abstract: Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combin… ▽ More Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combines gate-tunable superconductivity and sizeable spin-orbit coupling is emerging as a promising platform to realize topological superconductivity. However, the fabrication of nanodevices in which the electronic properties of this oxide interface can be controlled at the nanoscale by field-effect remains a scientific and technological challenge. Here, we demonstrate the quantization of conductance in a ballistic quantum point contact (QPC), formed by electrostatic confinement of the LaAlO3/SrTiO3 2-DEG with a split-gate. Through finite source-drain voltage, we perform a comprehensive spectroscopic investigation of the 3d energy levels inside the QPC, which can be regarded as a spectrometer able to probe Majorana states in an oxide 2-DEG. △ Less

Submitted 28 March, 2019; originally announced March 2019.

Switching on superferromagnetism

Authors: A. Arora, L. C. Phillips, P. Nukala, M. Ben Hassine, A. A. Ünal, B. Dkhil, Ll. Balcells, O. Iglesias, A. Barthélémy, F. Kronast, M. Bibes, S. Valencia

Abstract: Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenu… ▽ More Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior. △ Less

Submitted 12 February, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: 9 pages, 6 figures, Supp. Info. available at: http://www.ffn.ub.es/oscar/Articles.html

Journal ref: Physical Review Materials 3, 024403 (2019)

Origin of band gaps in 3d perovskite oxides

Authors: Julien Varignon, Manuel Bibes, Alex Zunger

Abstract: With their broad range of magnetic, electronic and structural properties, transition metal perovskite oxides ABO3 have long served as a platform for testing condensed matter theories. In particular, their insulating character - found in most compounds - is often ascribed to dynamical electronic correlations through the celebrated Mott-Hubbard mechanism where ga** arises from a uniform, symmetry-… ▽ More With their broad range of magnetic, electronic and structural properties, transition metal perovskite oxides ABO3 have long served as a platform for testing condensed matter theories. In particular, their insulating character - found in most compounds - is often ascribed to dynamical electronic correlations through the celebrated Mott-Hubbard mechanism where ga** arises from a uniform, symmetry-preserving electron repulsion mechanism. However, structural distortions are ubiquitous in perovskites and their relevance with respect to dynamical correlations in producing this rich array of properties remains an open question. Here, we address the origin of band gap opening in the whole family of 3d perovskite oxides. We show that a single-determinant mean-field approach such as density functional theory (DFT) successfully describes the structural, magnetic and electronic properties of the whole series, at low and high temperatures. We find that insulation occurs via energy-lowering crystal symmetry reduction (octahedral rotations, Jahn-Teller and bond disproportionation effects), as well as intrinsic electronic instabilities, all lifting orbital degeneracies. Our work therefore suggests that whereas ABO3 oxides may be complicated, they are not necessarily strongly correlated. It also opens the way towards systematic investigations of do** and defect physics in perovskites, essential for the full realization of oxide-based electronics. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Mott gap** in 3d ABO3 perovskites without Mott-Hubbard interelectronic U

Authors: Julien Varignon, Manuel Bibes, Alex Zunger

Abstract: The existence of band gaps in Mott insulators such as perovskite oxides with partially filled 3d shells has been traditionally explained in terms of strong, dynamic inter-electronic repulsion codified by the on-site repulsion energy U in the Hubbard Hamiltonian. The success of the "DFT+U approach" where an empirical on-site potential term U is added to the exchange-and correlation Density Function… ▽ More The existence of band gaps in Mott insulators such as perovskite oxides with partially filled 3d shells has been traditionally explained in terms of strong, dynamic inter-electronic repulsion codified by the on-site repulsion energy U in the Hubbard Hamiltonian. The success of the "DFT+U approach" where an empirical on-site potential term U is added to the exchange-and correlation Density Functional Theory (DFT) raised questions on whether U in DFT+U represents interelectronic correlation in the same way as it does in the Hubbard Hamiltonian, and if empiricism in selecting U can be avoided. Here we illustrate that ab-initio DFT without any U is able to predict gap** trends and structural symmetry breaking (octahedra rotations, Jahn-Teller modes, bond disproportionation) for all ABO3 3d perovskites from titanates to nickelates in both spin-ordered and spin disordered paramagnetic phases. We describe the paramagnetic phases as a supercell where individual sites can have different local environments thereby allowing DFT to develop finite moments on different sites as long as the total cell has zero moment. We use a recently developed exchange and correlation functional ("SCAN") that is sanctioned by the usual single-determinant, mean-field DFT paradigm with static correlations, but has a more precise rendering of self-interaction cancelation. Our results suggest that strong dynamic electronic correlations are not playing a universal role in gap** of 3d ABO3 Mott insulators, and opens the way for future applications of DFT for studying a plethora of complexity effects that depend on the existence of gaps, such as do**, defects, and band alignment in ABO3 oxides. △ Less

Submitted 27 May, 2019; v1 submitted 2 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 100, 035119 (2019)

Bond disproportionation, charge self-regulation and ligand holes in s-p and in d electron ABX3 perovskites by density functional theory

Authors: Gustavo Martini Dalpian, Qihang Liu, Julien Varignon, Manuel Bibes, Alex Zunger

Abstract: Some ABX3 perovskites exhibit different local environments (DLE) for the same B atoms in the lattice, an effect referred to as disproportionation, distinguishing such compounds from perovskites that have single local environments (SLE). The basic phenomenology of disproportionation involves the absence of B-atom charge ordering, the creation of different B-X bond length for different local environ… ▽ More Some ABX3 perovskites exhibit different local environments (DLE) for the same B atoms in the lattice, an effect referred to as disproportionation, distinguishing such compounds from perovskites that have single local environments (SLE). The basic phenomenology of disproportionation involves the absence of B-atom charge ordering, the creation of different B-X bond length for different local environments, the appearance of metal (in SLE) to insulator (in DLE) transition, and the formation of ligand holes. We point out that this phenomenology is common to a broad range of chemical bonding patterns in ABX3 compounds, either with s-p electron B-metal cations (BaBiO3, CsTlF3), or noble metal cation (CsAuCl3), as well as d-electron cations (SmNiO3, CaFeO3). We show that underlying much of this phenomenology is the self-regulating response, whereby in strongly bonded metal-ligand systems with high lying ligand orbitals, the system protects itself from creating highly charged cations by transferring ligand electrons to the metal, thus preserving a nearly constant metal charge in DLE, while creating B-ligand bond alternation and ligand-like conduction band (ligand hole). We are asking what are the minimal theory ingredients needed to explain the main features of this SLE-to-DLE phenomenology, such as its energetic driving force, bond length changes, possible modifications in charge density and density of state changes. Using as a guide the lowering of the total energy in DLE relative to SLE, we show that density functional calculations describe this phenomenology across the whole chemical bonding range without resort to special strong correlation effects, beyond what DFT naturally contains. In particular, lower total energy configurations (DLE) naturally develop bond alternation, ga** of the metallic SLE state, and absence of charge ordering with ligand hole formation. △ Less

Submitted 2 October, 2018; originally announced October 2018.

Comments: 31 pages, 10 figures, 3 tables. Physical Review B 98 (7), 075135

Switchable and tunable Rashba-type spin splitting in covalent perovskite oxides

Authors: Julien Varignon, Jacobo Santamaria, Manuel Bibes

Abstract: In transition metal perovskites (ABO3) most physical properties are tunable by structural parameters such as the rotation of the BO6 octahedra. Examples include the Néel temperature of orthoferrites, the conductivity of mixed-valence manganites, or the band gap of rare-earth scandates. Since oxides often host large internal electric dipoles and can accommodate heavy elements, they also emerge as p… ▽ More In transition metal perovskites (ABO3) most physical properties are tunable by structural parameters such as the rotation of the BO6 octahedra. Examples include the Néel temperature of orthoferrites, the conductivity of mixed-valence manganites, or the band gap of rare-earth scandates. Since oxides often host large internal electric dipoles and can accommodate heavy elements, they also emerge as prime candidates to display Rashba spin-orbit coupling, through which charge and spin currents may be efficiently interconverted. However, despite a few experimental reports in SrTiO3-based interface systems, the Rashba interaction has been little studied in these materials, and its interplay with structural distortions remain unknown. In this Letter, we identify a bismuth-based perovskite with a giant, electrically-switchable Rashba interaction whose amplitude can be controlled by both the ferroelectric polarization and the breathing mode of oxygen octahedra. This particular structural parameter arises from the strongly covalent nature of the Bi-O bonds, reminiscent of the situation in perovskite nickelates. Our results not only provide novel strategies to craft agile spin-charge converters but also highlight the relevance of covalence as a powerful handle to design emerging properties in complex oxides. △ Less

Submitted 9 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Lett. 122, 116401 (2019)

Full field electron spectromicroscopy applied to ferroelectric materials

Authors: N. Barrett, J. E. Rault, J. L. Wang, C. Mathieu, A. Locatelli, T. O. Mentes, M. A. Nino, S. Fusil, M. Bibes, A. Barthelemy, D. Sando, W. Ren, S. Prosandeev, L. Bellaiche, B. Vilquin, A. Petraru, I. P. Krug, C. M. Schneider

Abstract: The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both P… ▽ More The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical map**, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 15 pages, 9 figures

Journal ref: Journal of Applied Physics 113, 187217 (2013)