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Collective Behavior Induced Highly Sensitive Magneto-Optic Effect in 2D Inorganic Liquid Crystals
Authors:
Tianshu Lan,
Baofu Ding,
Ziyang Huang,
Fenggang Bian,
Yikun Pan,
Hui-Ming Cheng,
Bilu Liu
Abstract:
Collective behavior widely exists in nature, ranging from the macroscopic cloud of swallows to the microscopic cloud of colloidal particles. The behavior of an individual inside the collective is distinctive from its behavior alone, as it follows its neighbors. The introduction of such collective behavior in two-dimensional (2D) materials may offer new possibilities to achieve desired but unattain…
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Collective behavior widely exists in nature, ranging from the macroscopic cloud of swallows to the microscopic cloud of colloidal particles. The behavior of an individual inside the collective is distinctive from its behavior alone, as it follows its neighbors. The introduction of such collective behavior in two-dimensional (2D) materials may offer new possibilities to achieve desired but unattained properties. Here, we report a highly sensitive magneto-optic effect and transmissive magneto-coloration via introducing collective behavior into magnetic 2D material dispersions. The increase of ionic strength in the dispersion enhances the collective behavior of colloidal particles, giving rise to a magneto-optic Cotton-Mouton coefficient up to 2700 T-2m-1 which is the highest value obtained so far, being three orders of magnitude larger than other known transparent media. We also reveal linearly dependence of magneto-coloration on the concentration and hydration radius of ions. Such linear dependence and the extremely large Cotton-Mouton coefficient cooperatively allow fabrication of giant magneto-birefringent devices for color-centered visual sensing.
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Submitted 30 August, 2021;
originally announced August 2021.
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Highly Efficient Ion Rejection by Graphene Oxide Membranes via Ion-controlling Interlayer Spacing
Authors:
Liang Chen,
Guosheng Shi,
Jie Shen,
Bingquan Peng,
Bowu Zhang,
Yuzhu Wang,
Fenggang Bian,
Jiajun Wang,
Deyuan Li,
Zhe Qian,
Gang Xu,
Guoquan Zhou,
Minghong Wu,
Wanqin **,
**gye Li,
Hai** Fang
Abstract:
Because they may provide ultrathin, high-flux, and energy-efficient membranes for precise ionic and molecular sieving in aqueous solution, GO membranes (partially oxidized, stacked sheets of graphene) have shown great potential in water desalination and purification, gas and ion separation, biosensors, proton conductors, lithium-based batteries and super-capacitors. Unlike carbon nanotube (CNT) me…
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Because they may provide ultrathin, high-flux, and energy-efficient membranes for precise ionic and molecular sieving in aqueous solution, GO membranes (partially oxidized, stacked sheets of graphene) have shown great potential in water desalination and purification, gas and ion separation, biosensors, proton conductors, lithium-based batteries and super-capacitors. Unlike carbon nanotube (CNT) membranes, in which the nanotube pores have fixed sizes, the pores of GO membranes - the interlayer spacing between GO sheets - are of variable size. This presents a challenge for using GO membranes for filtration. Despite the great efforts to tune and fix the interlayer spacing, it remains difficult both to reduce the interlayer spacing sufficiently to exclude small ions while kee** this separation constant against the tendency of GO membranes to swell when immersed in aqueous solution, which greatly affects the applications of GO membranes. Here, we demonstrate experimentally that highly efficient and selective ion rejection by GO membranes can be readily achieved by controlling the interlayer spacing of GO membranes using cations (K+, Na+, Ca2+, Li+ and Mg2+) themselves. The interspacing can be controlled with precision as small as 1 A, and GO membranes controlled by one kind of cation can exclude other cations with a larger hydrated volume, which can only be accommodated with a larger interlayer spacing. First-principles calculations reveal that the strong noncovalent cation-pi interactions between hydrated cations in solution and aromatic ring structures in GO are the cause of this unexpected behavior. These findings open up new avenues for using GO membranes for water desalination and purification, lithium-based batteries and super-capacitors, molecular sieves for separating ions or molecules, and many other applications.
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Submitted 20 October, 2016;
originally announced October 2016.
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Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
Authors:
U. Jahn,
M. Musolino,
J. Lähnemann,
P. Dogan,
S. Fernández Garrido,
J. F. Wang,
K. Xu,
D. Cai,
L. F. Bian,
X. J. Gong,
H. Yang
Abstract:
Several ten $μ$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in cathodolum…
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Several ten $μ$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features allow for an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, a silicon incorporation into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in a first case, the epitaxy is dominated by the formation of slowly growing facets, while in a second case, the epitaxy proceeds directly along the c-axis.
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Submitted 10 May, 2016;
originally announced May 2016.
