Showing 1–17 of 17 results for author: Bi, C

Large enhancement of spin-orbit torques under a MHz modulation due to phonon-magnon coupling

Authors: Hanying Zhang, Qianwen Zhao, Baiqing Jiang, Yuan Wang, Tunan Xie, Kaihua Lou, ChaoChao Xia, C. Bi

Abstract: The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years. Quantitative characterization of SOTs highly relies on the SOT-driven ferromagnetic resonance (ST-FMR), where a modulated microwave current is used to generate ac S… ▽ More The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years. Quantitative characterization of SOTs highly relies on the SOT-driven ferromagnetic resonance (ST-FMR), where a modulated microwave current is used to generate ac SOTs and the modulation-frequency is usually less than 100 kHz (the limit of conventional lock-in amplifiers). Here we have investigated the SOT of typical SOT material/ferromagnet bilayers in an extended modulation-frequency range, up to MHz, by develo** the ST-FMR measurement. Remarkably, we found that the measured SOTs are enhanced about three times in the MHz range, which cannot be explained according to present SOT theory. We attribute the enhancement of SOT to additional magnon excitations due to phonon-magnon coupling, which is also reflected in the slight changes of resonant field and linewidth in the acquired ST-FMR spectra, corresponding to the modifications of effective magnetization and dam** constant, respectively. Our results indicate that the write current of SOT-MRAM may be reduced with the assistant of phonon-magnon coupling. △ Less

Submitted 1 December, 2023; originally announced January 2024.

Proximity-induced interfacial room-temperature ferromagnetism in semiconducting Fe3GeTe2

Authors: Qianwen Zhao, Yingmei Zhu, Hanying Zhang, Baiqing Jiang, Yuan Wang, Tunan Xie, Kaihua Lou, ChaoChao Xia, Hongxin Yang, C. Bi

Abstract: The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion do** are currently underway to enhance the functional temperature, in… ▽ More The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion do** are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their plenty of applications in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building high-efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidences of magnetic proximity effects by using non-ferromagnetic materials. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order

Authors: Qianwen Zhao, ChaoChao Xia, Hanying Zhang, Baiqing Jiang, Tunan Xie, Kaihua Lou, Chong Bi

Abstract: The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystall… ▽ More The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricated nanometer-thick amorphous Fe3GeTe2 films approaching the monolayer thickness limit of crystallized Fe3GeTe2 (0.8 nm) through magnetron sputtering. Compared to crystallized Fe3GeTe2, we found that the basic ferromagnetic attributes, such as the Curie temperature that directly reflects magnetic exchange interactions and local anisotropic energy, do not change significantly in the amorphous states. This is attributed to that the short-range atomic order, as confirmed by valence state analysis, is almost the same for both phases. The persistence of ferromagnetism in the ultrathin amorphous counterpart has also been confirmed through magnetoresistance measurements, where two unconventional switching dips arising from electrical transport within domain walls are clearly observed in the amorphous Fe3GeTe2 single layer. These results indicate that the long-range ferromagnetic order of crystallized Fe3GeTe2 may not correlate to the 2D crystalline order and the corresponding ferromagnetic attributes can be utilized in an amorphous state which suits large-scale fabrication in a semiconductor technology-compatible manner for spintronics applications. △ Less

Submitted 1 February, 2023; originally announced February 2023.

Comments: 27 pages, 5 figures

Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films

Authors: Kaihua Lou, Tunan Xie, Qianwen Zhao, Baiqing Jiang, ChaoChao Xia, Hanying Zhang, Zhihong Yao, Chong Bi

Abstract: Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-anne… ▽ More Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-annealing above 300 °C. Here, we report that the PMA of CoFeB/MgO films can be established reliably on various buffer layers in the absence of post-annealing. Further results show that precise control of MgO thickness, which determines oxygen diffusion in the underneath CoFeB layer, is the key to obtaining the as-deposited PMA. Interestingly, contrary to previous understanding, post-annealing does not influence the well-established as-deposited PMA significantly but indeed enhances unsaturated PMA with a thick MgO layer by modulating oxygen distributions, rather than crystallinity or Co- and Fe-O bonding. Moreover, our results indicate that oxygen diffusion also plays a critical role in the PMA degradation at high temperature. These results provide a practical approach to build spin-orbitronic devices based on various high-efficient SOT materials. △ Less

Submitted 31 August, 2022; originally announced August 2022.

Comments: 15 pages, 4 figures

Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer

Authors: Kaihua Lou, Qianwen Zhao, Baiqing Jiang, Chong Bi

Abstract: Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR,… ▽ More Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeB layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/CoFeB structures and can be detected by using conventional dc multimeters in the absence of lock-in amplifiers. We further demonstrate that the extracted AUMR by excluding thermal contributions shows reversal signs for the CoFeB and NiFe single layers with opposite SHAs, indicating that the AUMR may originate from the self-generated spin accumulation interacting with magnetization through the giant magnetoresistance-like mechanism. These results suggest that the AUMR contributes UMR signals larger than the interfacial spin Hall UMR in the CoFeB-involved systems, providing a convenient and reliable approach to detect in-plane magnetization for the two-terminal spintronic devices. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Comments: 22 pages, 6 figures

Journal ref: Phys. Rev. Applied 17, 064052 (2022)

Observation of anti-dam** spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Authors: Mahendra DC, Ding-Fu Shao, Vincent D. -H. Hou, P. Quarterman, Ali Habiboglu, Brooks Venuti, Masashi Miura, Brian Kirby, Arturas Vailionis, Chong Bi, Xiang Li, Fen Xue, Yen-Lin Huang, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Weigang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, Shan X. Wang

Abstract: High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic… ▽ More High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic fields. However, an external magnetic field is required to switch the magnetization along x and z-axes via SOT generated by y-spin polarization. Here, we present that the above limitation can be circumvented by unconventional SOT in magnetron-sputtered thin film MnPd3. In addition to the conventional in-plane anti-dam**-like torque due to the y-spin polarization, out-of-plane and in-plane anti-dam**-like torques originating from z-spin and x-spin polarizations, respectively have been observed at room temperature. The spin torque efficiency corresponding to the y-spin polarization from MnPd3 thin films grown on thermally oxidized silicon substrate and post annealed at 400 Deg C is 0.34 - 0.44. Remarkably, we have demonstrated complete external magnetic field-free switching of perpendicular Co layer via unconventional out-of-plane anti-dam**-like torque from z-spin polarization. Based on the density functional theory calculations, we determine that the observed x- and z- spin polarizations with the in-plane charge current are due to the low symmetry of the (114) oriented MnPd3 thin films. Taken together, the new material reported here provides a path to realize a practical spin channel in ultrafast magnetic memory and logic devices. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

Authors: Peng Li, **jun Ding, Steven S. -L. Zhang, James Kally, Timothy Pillsbury, Olle G. Heinonen, Gaurab Rimal, Chong Bi, August DeMann, Stuart B. Field, Weigang Wang, **ke Tang, J. S. Jiang, Axel Hoffmann, Nitin Samarth, Mingzhong Wu

Abstract: A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha… ▽ More A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Journal ref: Nano Letters 2020

Charge-Spin Interconversion in Epitaxial Pt Probed by Spin-Orbit Torques in a Magnetic Insulator

Authors: Peng Li, Lauren J. Riddiford, Chong Bi, Jacob J. Wisser, Xiao-Qi Sun, Arturas Vailionis, Michael J. Veit, Aaron Altman, Xiang Li, Mahendra DC, Shan X. Wang, Y. Suzuki, Satoru Emori

Abstract: We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the fer… ▽ More We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable dam**-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $\approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices. △ Less

Submitted 1 June, 2021; v1 submitted 10 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 064404 (2021)

Atomic Resonant Tunneling in the Surface Diffusion of H Atoms on Pt(111)

Authors: Cheng Bi, Yong Yang

Abstract: The quantum motions of hydrogen (H) atoms play an important role in the dynamical properties and functionalities of condensed phase materials as well as biological systems. In this work, based on the transfer matrix method and first-principles calculations, we study the dynamics of H atoms on Pt(111) surface and numerically calculate the quantum probability of H transferring across the surface pot… ▽ More The quantum motions of hydrogen (H) atoms play an important role in the dynamical properties and functionalities of condensed phase materials as well as biological systems. In this work, based on the transfer matrix method and first-principles calculations, we study the dynamics of H atoms on Pt(111) surface and numerically calculate the quantum probability of H transferring across the surface potential fields. Atomic resonant tunneling (ART) is demonstrated along a number of diffusion pathways. Owing to resonant tunneling, anomalous rate of transfer is predicted for H diffusion along certain path at low temperatures.The role of nuclear quantum effects (NQEs) on the surface reactions involving H is investigated, by analyzing the probabilities of barrier-crossing. The effective barrier is significantly reduced due to quantum tunneling, and decreases monotonically with temperature within a certain region. For barrier-crossing processes where the Arrhenius type relation applies, we show the existence of a nonzero low-temperature limit of rate constant, which indicates the nontrivial activity of H-involved reactions at cryogenic conditions. △ Less

Submitted 25 January, 2021; v1 submitted 28 August, 2020; originally announced August 2020.

Comments: 43 Pages, 7 Figures, 3 Tables

Journal ref: J. Phys. Chem. C 125, 464 (2021)

Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder

Authors: Xiang Li, Peng Li, Vincent D. -H. Hou, Mahendra DC, Chih-Hung Nien, Fen Xue, Di Yi, Chong Bi, Chien-Min Lee, Shy-Jay Lin, Wilman Tsai, Yuri Suzuki, Shan X. Wang

Abstract: Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we report that long-range disordered sputtered WTex thin films exhibit local chemical and structural order as those of Weyl semimetal WTe2 and conduction behavior that is consistent with semi-metallic Weyl fermion. We find large… ▽ More Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we report that long-range disordered sputtered WTex thin films exhibit local chemical and structural order as those of Weyl semimetal WTe2 and conduction behavior that is consistent with semi-metallic Weyl fermion. We find large charge-to-spin conversion properties and electrical conductivity in thermally annealed sputtered WTex films that are comparable with those in crystalline WTe2 flakes. Besides, the strength of unidirectional spin Hall magnetoresistance in annealed WTex/Mo/CoFeB heterostructure is 5 to 20 times larger than typical SOT layer/ferromagnet heterostructures reported at room temperature. We further demonstrate room temperature dam**-like SOT-driven magnetization switching of in-plane magnetized CoFeB. These large charge-to-spin conversion properties that are robust in the presence of long-range disorder and thermal annealing pave the way for industrial application of a new class of sputtered semimetals. △ Less

Submitted 20 April, 2021; v1 submitted 12 January, 2020; originally announced January 2020.

Two-terminal spin-orbit torque magnetoresistive random access memory

Authors: Noriyuki Sato, Fen Xue, Robert M. White, Chong Bi, Shan X. Wang

Abstract: Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have limitations including the stochastic nature of the STT-switching and a high critical switching current, which makes it unsuitable for ultrafast operation at nanosecond… ▽ More Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have limitations including the stochastic nature of the STT-switching and a high critical switching current, which makes it unsuitable for ultrafast operation at nanosecond and sub-nanosecond regimes. Spin-orbit torque (SOT) switching, which relies on the torque generated by an in-plane current, has the potential to overcome these limitations. However, SOT-MRAM cells studied so far use a three-terminal structure in order to apply the in-plane current, which increases the size of the cells. Here we report a two-terminal SOT-MRAM cell based on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrow Ta underlayer. In this device, an in-plane and out-of-plane current are simultaneously generated upon application of a voltage, and we demonstrate that the switching mechanism is dominated by SOT. We also compare our device to a STT-MRAM cell built with the same architecture and show that critical write current in the SOT-MRAM cell is reduced by more than 70%. △ Less

Submitted 23 August, 2018; v1 submitted 25 June, 2018; originally announced June 2018.

Comments: 21 pages, 13 figures

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Authors: T. Newhouse-Illige, Y. H. Xu, Y. H. Liu, S. Huang, H. Kato, C. Bi, M. Xu, B. J. LeRoy, W. G. Wang

Abstract: Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is s… ▽ More Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier. △ Less

Submitted 30 January, 2018; v1 submitted 31 August, 2017; originally announced September 2017.

Comments: 14 pages, 4 figures

Electrical control of metallic heavy-metal/ferromagnet interfacial states

Authors: Chong Bi, Congli Sun, Meng Xu, Ty Newhouse-Illige, Paul M. Voyles, Weigang Wang

Abstract: Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here we demonstrate that metallic systems can also be con… ▽ More Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here we demonstrate that metallic systems can also be controlled electrically through ionic not electronic effects. In a Pt/Co structure, the control of the metallic Pt/Co interface can lead to unprecedented control effects on the magnetic properties of the entire structure. Consequently, the magnetization and perpendicular magnetic anisotropy of the Co layer can be independently manipulated to any desired state, the efficient spin toques can be enhanced about 3.5 times, and the switching current can be reduced about one order of magnitude. This ability to control a metallic system may be extended to control other physical phenomena. △ Less

Submitted 21 August, 2017; originally announced August 2017.

Comments: 20 pages, 7 figures, Accepted by Physical Review Applied (2017)

Spin-orbit torque switching of synthetic antiferromagnets

Authors: Chong Bi, Hamid Almasi, Kyle Price, Ty Newhouse-Illige, Meng Xu, Shane R. Allen, Xin Fan, Weigang Wang

Abstract: We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle (SHA)-like switching can be observed in Pt/SAF structures with only positive SHA, depending on the strength of applied in-plane fields. A new switching mechanism dir… ▽ More We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle (SHA)-like switching can be observed in Pt/SAF structures with only positive SHA, depending on the strength of applied in-plane fields. A new switching mechanism directly arising from the asymmetric domain expansion is proposed to explain the anomalous switching behaviors. Contrary to the macrospin-based switching model that the SOT switching direction is determined by the sign of SHA, the new switching mechanism suggests that the SOT switching direction is dominated by the field-modulated domain wall motion and can be reversed even with the same sign of SHA. The new switching mechanism is further confirmed by the domain wall motion measurements. The anomalous switching behaviors provide important insights for understanding SOT switching mechanisms and also offer novel features for applications. △ Less

Submitted 9 January, 2017; originally announced January 2017.

Comments: 40 pages, 14 figures

Journal ref: Phys. Rev. B 95, 104434 (2017)

Reversible control of Co magnetism by voltage induced oxidation

Authors: Chong Bi, Yaohua Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J. W. Freeland, Oleg Mryasov, Shufeng Zhang, S. G. E. te Velthuis, W. G. Wang

Abstract: We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to an oxidized state with nearly zero magnetization, depending on the polarity and tim… ▽ More We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultra-low energy magnetization manipulation in spintronic devices. △ Less

Submitted 30 December, 2014; originally announced December 2014.

Comments: 12 pages, 9 figures, including supplemental materials. Phys. Rev. Lett., in press (Editors' Suggestion, featured in Physics)

Journal ref: Phys. Rev. Lett. 113, 267202 (2014)

Reversal-mechanism of in-plane current induced perpendicular switching in a single ferromagnetic layer

Authors: Chong Bi, Ming Liu

Abstract: We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring… ▽ More We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring the field dependent switching behaviors, we show that such switching can also be achieved between any two multidomain states, and all of these switching behaviors can be well explained by this model. This model indicates that the spin Hall angle in such structures may be overestimated and also predicts similar switching behaviors in other ferromagnetic structures with chiral domain walls or skyrmions. △ Less

Submitted 12 September, 2014; originally announced September 2014.

Journal ref: Journal of Magnetism and Magnetic Materials-2015

Far-infrared optical properties of the pyrochlore spin ice compound Dy2Ti2O4

Authors: C. Z. Bi, J. Y. Ma, B. R. Zhao, Z. Tang, D. Yin, C. Z. Li, D. Z. Yao, J. Shi, X. G. Qiu

Abstract: Near normal incident far-infrared reflectivity spectra of [111] dysprosium titanate (Dy2Ti2O4) single crystal have been measured at different temperatures. Seven phonon modes (eight at low temperature) are identified at frequency below 1000 cm-1. Optical conductivity spectra are obtained by fitting all the reflectivity spectra with the factorized form of the dielectric function. Both the Born ef… ▽ More Near normal incident far-infrared reflectivity spectra of [111] dysprosium titanate (Dy2Ti2O4) single crystal have been measured at different temperatures. Seven phonon modes (eight at low temperature) are identified at frequency below 1000 cm-1. Optical conductivity spectra are obtained by fitting all the reflectivity spectra with the factorized form of the dielectric function. Both the Born effective charges and the static optical primitivity are found to increase with decreasing temperature. Moreover, phonon linewidth narrowering and phonon modes shift with decreasing temperature are also observed, which may result from enhanced charge localization. The redshift of several low frequency modes is attributed to the spin-phonon coupling. All observed optical properties can be explained within the framework of nearest neighbor ferromagnetic(FM) spin ice model. △ Less

Submitted 30 July, 2005; originally announced August 2005.