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An Ultra-High Vacuum Scanning Tunneling Microscope with Pulse Tube and Joule-Thomson cooling operating at sub-pm z-noise
Authors:
Marcus Eßer,
Marco Pratzer,
Marc Frömming,
Jonas Duffhauß,
Priyamvada Bhaskar,
Michael A. Krzyzowski,
Markus Morgenstern
Abstract:
We describe a compact ultra-high vacuum (UHV) scanning tunneling microscope (STM) system that does not need any external supply of cooling liquids. It achieves temperatures down to 1.5 K and a z-noise down to 300 fmRMS for the frequency range of 0.1 Hz - 5 kHz (feedback loop off). It employs a pulse tube cryocooler (PTC) and a Joule-Thomson (JT) stage inducing only small temperature oscillations a…
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We describe a compact ultra-high vacuum (UHV) scanning tunneling microscope (STM) system that does not need any external supply of cooling liquids. It achieves temperatures down to 1.5 K and a z-noise down to 300 fmRMS for the frequency range of 0.1 Hz - 5 kHz (feedback loop off). It employs a pulse tube cryocooler (PTC) and a Joule-Thomson (JT) stage inducing only small temperature oscillations at the STM with amplitude below 1 mK. The challenge to combine an effective vibrational decoupling from the PTC with sufficient thermal conduction is tackled by a multipartite approach. We realize a minimal stiffness of the UHV bellows that connect the PTC and the STM chamber. Fine Copper wires mechanically decouple the PTC stages from cooling plates that carry the thermal shields, the JT stage and the STM. Soft springs decouple the STM from the JT stage. Finally, the STM body has an optimized conical shape and is made of the light and stiff material Shapal Hi MSoft such that a strong reduction of low frequency vibrations results for the tunnel junction. The voltage noise in the tunnel junction is 0.12 mV and an RF antenna close to the tunnel junction provides radio frequency excitations up to 40 GHz with amplitudes up to 10 mV.
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Submitted 30 May, 2024;
originally announced May 2024.
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Cooling Rate Effects on the Structure of 45S5 Bioglass: Computational and Experimental Evidence of Si--P Avoidance
Authors:
Pratik Bhaskar,
Yashasvi Maurya,
Rajesh Kumar,
R. Ravinder,
Amarnath R. Allu,
Sumanta Das,
Nitya Nand Gosvami,
Randall E. Youngman,
Mikkel S. Bødker,
Nerea Mascaraque,
Morten M. Smedskjaer,
Mathieu Bauchy,
N. M. Anoop Krishnan
Abstract:
Due to its ability to bond with living tissues upon dissolution, 45S5 bioglass and related compositions are promising materials for the replacement, regeneration, and repair of hard tissues in the human body. However, the details of their atomic structure remain unclear. This is partially due to the non-equilibrium nature of glasses, as their non-crystalline structure is highly dependent on their…
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Due to its ability to bond with living tissues upon dissolution, 45S5 bioglass and related compositions are promising materials for the replacement, regeneration, and repair of hard tissues in the human body. However, the details of their atomic structure remain unclear. This is partially due to the non-equilibrium nature of glasses, as their non-crystalline structure is highly dependent on their thermal history, namely, the cooling rate used during quenching. Herein, using molecular dynamics (MD) simulations and magic angle spinning nuclear magnetic resonance (MAS-NMR) spectroscopy experiments, we investigate the structure of the nominal 45S5 bioglass composition prepared using cooling rates ranging over several orders of magnitude. We show that the simulations results are in very good agreement with experimental data, provided that they are extrapolated toward lower cooling rates achieved in experiments. These results highlight that previously reported inconsistencies between simulations and experiments stem from the difference in cooling rate, thereby addressing one of the longstanding questions on the structure of bioglass. Based on these results, we demonstrate the existence of a Si--P avoidance behavior, which may be key in controlling the bioactivity of 45S5 bioglass.
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Submitted 24 June, 2019;
originally announced June 2019.
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Origin and evolution of surface spin current in topological insulators
Authors:
André Dankert,
Priyamvada Bhaskar,
Dmitrii Khokhriakov,
Isabel H. Rodrigues,
Bogdan Karpiak,
M. Venkata Kamalakar,
Sophie Charpentier,
Ion Garate,
Saroj P. Dash
Abstract:
The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing…
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The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100K. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2 and 100K, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.
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Submitted 26 April, 2018;
originally announced April 2018.
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Mask aligner for ultrahigh vacuum with capacitive distance control
Authors:
Priyamvada Bhaskar,
Simon Mathioudakis,
Tim Olschewski,
Florian Muckel,
Jan Raphael Bindel,
Marco Pratzer,
Marcus Liebmann,
Markus Morgenstern
Abstract:
We present a mask aligner driven by three piezo motors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed in $μ$m distance from the sample surface, while kee** it parallel to the surface. Samples and masks can be exchanged in-situ and the mask…
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We present a mask aligner driven by three piezo motors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed in $μ$m distance from the sample surface, while kee** it parallel to the surface. Samples and masks can be exchanged in-situ and the mask can additionally be displaced parallel to the surface. We demonstrate an edge sharpness of the deposited structures below 100 nm, which is likely limited by the diffusion of the deposited Au on Si(111).
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Submitted 8 January, 2018;
originally announced January 2018.
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Map** the band structure of GeSbTe phase change alloys around the Fermi level
Authors:
Jens Kellner,
Gustav Bihlmayer,
Marcus Liebmann,
Sebastian Otto,
Christian Pauly,
Jos Emiel Boschker,
Valeria Bragaglia,
Stefano Cecchi,
Rui Ning Wang,
Volker L. Deringer,
Philipp Küppers,
Priyamvada Bhaskar,
Evangelos Golias,
Jaime Sánchez-Barriga,
Richard Dronskowski,
Thomas Fauster,
Oliver Rader,
Raffaella Calarco,
Markus Morgenstern
Abstract:
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence…
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Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.
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Submitted 17 January, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
