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Quarter- and half-filled quantum Hall states and their competing interactions in bilayer graphene
Authors:
Ravi Kumar,
André Haug,
Jehyun Kim,
Misha Yutushui,
Konstantin Khudiakov,
Vishal Bhardwaj,
Alexey Ilin,
Kenji Watanabe,
Takashi Taniguchi,
David F. Mross,
Yuval Ronen
Abstract:
Bilayer graphene has emerged as a key platform for studying non-Abelian fractional quantum Hall (FQH) states. Its multiple half-filled plateaus with large energy gaps combined with its tunability offer an opportunity to distill the principles that determine their topological order. Here, we report four additional plateaus at $ν=\frac{1}{2}$ for different spin and valley, revealing a systematic pat…
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Bilayer graphene has emerged as a key platform for studying non-Abelian fractional quantum Hall (FQH) states. Its multiple half-filled plateaus with large energy gaps combined with its tunability offer an opportunity to distill the principles that determine their topological order. Here, we report four additional plateaus at $ν=\frac{1}{2}$ for different spin and valley, revealing a systematic pattern of non-Abelian states according to their Levin--Halperin daughter states. Whenever a pair of $N=1$ Landau levels cross, anti-Pfaffian and Pfaffian develop at half filling of the lower and higher levels, respectively. In the $N=0$ levels, where half-filled plateaus are absent, we instead observe four unexpected incompressible quarter-filled states along with daughters. The mutual exclusion of half- and quarter-filled states indicates a robust competition between the interactions favoring either paired states of two-flux or four-flux composite fermions. Finally, we observe several FQH states that require strong interactions between composite fermions. Our combined findings herald a new generation of quantum Hall physics in graphene-based heterostructures.
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Submitted 29 May, 2024;
originally announced May 2024.
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Aharonov-Bohm interference and the evolution of phase jumps in fractional quantum Hall Fabry-Perot interferometers based on bi-layer graphene
Authors:
Jehyun Kim,
Himanshu Dev,
Ravi Kumar,
Alexey Ilin,
André Haug,
Vishal Bhardwaj,
Changki Hong,
Kenji Watanabe,
Takashi Taniguchi,
Ady Stern,
Yuval Ronen
Abstract:
Quasi-particles in fractional quantum Hall states are collective excitations that carry fractional charge and anyonic statistics. While the fractional charge affects semi-classical characteristics such as shot noise and charging energies, the anyonic statistics is most notable in quantum interference phenomena. In this study, we utilize a versatile bilayer graphene-based Fabry-Pérot Interferometer…
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Quasi-particles in fractional quantum Hall states are collective excitations that carry fractional charge and anyonic statistics. While the fractional charge affects semi-classical characteristics such as shot noise and charging energies, the anyonic statistics is most notable in quantum interference phenomena. In this study, we utilize a versatile bilayer graphene-based Fabry-Pérot Interferometer (FPI) that facilitates the study of a broad spectrum of operating regimes, from Coulomb-dominated to Aharonov-Bohm, for both integer and fractional quantum Hall states. Focusing on the $ν$=$1 \over 3$ fractional quantum Hall state, we study the Aharonov-Bohm interference of quasi-particles when the magnetic flux through an interference loop and the charge density within the loop are independently varied. When their combined variation is such that the Landau filling remains $1 \over 3$ we observe pristine Aharonov-Bohm oscillations with a period of three flux quanta, as is expected from the interference of quasi-particles of one-third of the electron charge. When the combined variation is such that it leads to quasi-particles addition or removal from the loop, phase jumps emerge, and alter the phase evolution. Notably, across all cases, the average phase consistently increases by 2$π$ with each addition of one electron to the loop.
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Submitted 19 February, 2024;
originally announced February 2024.
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Structural and transport properties of 4f electron doped Y1-x(Dy)xPdBi topological semi-metallic thin films
Authors:
Vishal Bhardwaj,
Niladri Banerjee,
Ashok K. Ganguli,
Ratnamala Chatterjee
Abstract:
We report the effect of 4f electron do** on structural, electrical and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2, 0.5, 1) thin films grown by pulsed laser deposition. The Dy do** leads to lattice contraction which increases from 0% for the parent x =0 sample to approx 1.3% for x=1 sample with increase in Dy do**. The electrical transport measurements show…
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We report the effect of 4f electron do** on structural, electrical and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2, 0.5, 1) thin films grown by pulsed laser deposition. The Dy do** leads to lattice contraction which increases from 0% for the parent x =0 sample to approx 1.3% for x=1 sample with increase in Dy do**. The electrical transport measurements show a typical semi-metallic behaviour in the temperature range 3K to 300K and a sharp drop in resistivity at low temperatures (less than 3K) for all the samples. Magnetotransport measurements and Shubnikov de-Hass oscillations at high magnetic fields demonstrate that for these topologically non-trivial samples, Dy do** induced lattice contraction plays an active role in modifying the Fermi surface, carrier concentration and the effective electron mass. There is an uniform suppression of the onset of superconductivity with increased Dy do** which is possibly related to the increasing local exchange field arising from the 4f electrons in Dy. Our results indicate that we can tune various band structure parameters of YPdBi by f electron do** and strained thin films of Y1-x(Dy)xPdBi show surface dominated relativistic carrier transport at low temperatures.
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Submitted 3 February, 2021; v1 submitted 22 January, 2021;
originally announced January 2021.
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Strain driven emergence of topological non-triviality in YPdBi thin films
Authors:
Vishal Bhardwaj,
Anupam Bhattacharya,
Shivangi Srivastava,
Vladimir V. Khovaylo,
Jhuma Sannigrahi,
Niladri Banerjee,
Brajesh K. Mani,
Ratnamala Chatterjee
Abstract:
Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivi…
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Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for develo** next-generation spintronic devices.
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Submitted 22 January, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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New quantum phases of matter: Topological Materials
Authors:
Vishal Bhardwaj,
Ratnamala Chatterjee
Abstract:
In this article, we provide an overview of the basic concepts of novel topological materials. This new class of materials developed by combining the Weyl/Dirac fermionic electron states and magnetism, provide a materials-science platform to test predictions of the laws of topological physics. Owing to their dissipationless transport, these materials hold high promises for technological application…
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In this article, we provide an overview of the basic concepts of novel topological materials. This new class of materials developed by combining the Weyl/Dirac fermionic electron states and magnetism, provide a materials-science platform to test predictions of the laws of topological physics. Owing to their dissipationless transport, these materials hold high promises for technological applications in quantum computing and spintronics devices.
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Submitted 15 March, 2020;
originally announced March 2020.
