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Progress in Develo** Highly Efficient p-Type TCOs for Transparent Electronics: A Comprehensive Review
Authors:
Jarnail Singh,
Pankaj Bhardwaj
Abstract:
Transparent conducting oxides (TCOs) represent a remarkable class of materials that possess both excellent electrical conductivity and high optical transparency, which are typically considered mutually exclusive in traditional materials. In conventional materials, achieving both high electrical conductivity and optical transparency is difficult. Materials with a wide optical band gap are transpare…
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Transparent conducting oxides (TCOs) represent a remarkable class of materials that possess both excellent electrical conductivity and high optical transparency, which are typically considered mutually exclusive in traditional materials. In conventional materials, achieving both high electrical conductivity and optical transparency is difficult. Materials with a wide optical band gap are transparent in the visible region but lack electrical conductivity, while conductive metals are opaque. Hence, the only way to induce both properties in a single material is to create non-stoichiometry and/or defects. By introducing shallow defects near the conduction band for n-type materials and the valence band for p-type materials, it is possible to enhance the conductivity of the material at room temperature. However, develo** efficient p-type TCOs has been particularly difficult due to the localized nature of the valence band derived from O 2p orbitals and the challenges associated with shallow acceptors, resulting in large effective mass of holes. While commercially available TCOs are predominantly n-type, such as Sn:In2O3, Al:ZnO, and F:SnO2, the development of efficient p-type TCOs lags. In this review, we have discussed the origin of p-type conductivity in TCOs, and the difficulties encountered in develo** efficient p-type materials. We have also demonstrated the fundamental materials physics of p-type TCOs, including electronic structures, do**, defect properties, and optical properties. A range of deposition techniques has been adopted to prepare TCO films, and this review provides a detailed discussion of these techniques and their relative deposition parameters. Overall, we have presented an up-to-date and comprehensive review of different p-type transparent conducting oxide thin films, providing insights into ongoing research and potential future directions in this field.
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Submitted 23 May, 2024;
originally announced May 2024.
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Harnessing the Duality of Magnetism and Conductivity: A Review of Oxide based Dilute Magnetic Semiconductors
Authors:
Pankaj Bhardwaj,
Jarnail Singh,
Vikram Verma,
Ravi Kumar
Abstract:
Over the last two decades, the new branch of spintronics, i.e., semiconductor spintronics, has gained more attention because it integrates the characteristics of conventional semiconductors, such as optical bandgap and charge carriers, helpful for processing and computing pieces of information combined with magnets for data storage applications in a single device. Likewise, substituting transition…
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Over the last two decades, the new branch of spintronics, i.e., semiconductor spintronics, has gained more attention because it integrates the characteristics of conventional semiconductors, such as optical bandgap and charge carriers, helpful for processing and computing pieces of information combined with magnets for data storage applications in a single device. Likewise, substituting transition metal (TM) ions to induce magnetic qualities into semiconductors or oxides creates dilute magnetic semiconductors (DMSs) or oxides (DMOs) with high electronic, photonic, and magnetic functionality. This review article discusses the historical outline of magnetic semiconductors with their origin and mechanism. It also includes a concise overview of various DMO systems based on their conductivity (p-type and n-type) to elucidate the synthesis, origin, and control mechanisms and further evoke the prepared spintronics devices. The occurrence of RTFM with transparency and conductivity can be helpful in spintronics device fabrications, which was assumed to be governed by the formation of intrinsic defects, charge carriers, morphology, and the induced exchange interactions between ions. The DMOs-based spintronics devices, such as magneto-optical devices, transparent ferromagnets, and spin-based solar cells, exploit both semiconducting and magnetic properties, which have also been discussed in this review article with outlook and perspectives.
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Submitted 6 May, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
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Switchable Photovoltaic Effect in Ferroelectric CsPbBr3 Nanocrystals
Authors:
Anashmita Ghosh,
Susmita Paul,
Mrinmay Das,
Piyush Kanti Sarkar,
Pooja Bhardwaj,
Goutam Sheet,
Surajit Das,
Anuja Datta,
Somobrata Acharya
Abstract:
Ferroelectric all-inorganic halide perovskites nanocrystals with both spontaneous polarizations and visible light absorption are promising candidates for designing functional ferroelectric photovoltaic devices. Three dimensional halide perovskite nanocrystals have the potential of being ferroelectric, yet it remains a challenge to realize ferroelectric photovoltaic devices which can be operated in…
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Ferroelectric all-inorganic halide perovskites nanocrystals with both spontaneous polarizations and visible light absorption are promising candidates for designing functional ferroelectric photovoltaic devices. Three dimensional halide perovskite nanocrystals have the potential of being ferroelectric, yet it remains a challenge to realize ferroelectric photovoltaic devices which can be operated in absence of an external electric field. Here we report that a popular all-inorganic halide perovskite nanocrystal, CsPbBr3, exhibits ferroelectricity driven photovoltaic effect under visible light in absence of an external electric field. The ferroelectricity in CsPbBr3 nanocrystals originates from the stereochemical activity in Pb (II) lone pair that promotes the distortion of PbBr6 octahedra. Furthermore, application of an external electric field allows the photovoltaic effect to be enhanced and the spontaneous polarization to be switched with the direction of the electric field. Robust fatigue performance, flexibility and prolonged photoresponse under continuous illumination are potentially realized in the zero-bias conditions. These finding establishes all-inorganic halide perovskites nanocrystals as potential candidates for designing novel photoferroelectric devices by coupling optical functionalities and ferroelectric responses.
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Submitted 10 January, 2024; v1 submitted 6 January, 2024;
originally announced January 2024.
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Topological surface states host superconductivity induced by the bulk condensate in YRuB$_2$
Authors:
Nikhlesh Singh Mehta,
Bikash Patra,
Mona Garg,
Ghulam Mohmad,
Mohd Monish,
Pooja Bhardwaj,
P. K. Meena,
K. Motla,
Ravi Prakash Singh,
Bahadur Singh,
Goutam Sheet
Abstract:
While the possibility of topological superconductivity (TSC) in hybrid heterostructures involving topologically nontrivial band structure and superconductors has been proposed, the realization of TSC in a single stoichiometric material is most desired for fundamental experimental investigation of TSC and its device applications. Bulk measurements on YRuB$_2$ detect a single superconducting gap of…
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While the possibility of topological superconductivity (TSC) in hybrid heterostructures involving topologically nontrivial band structure and superconductors has been proposed, the realization of TSC in a single stoichiometric material is most desired for fundamental experimental investigation of TSC and its device applications. Bulk measurements on YRuB$_2$ detect a single superconducting gap of $\sim$ 1 meV. This is supported by our electronic structure calculations which also reveal the existence of topological surface states in the system. We performed surface-sensitive Andreev reflection spectroscopy on YRuB$_2$ and detected the bulk superconducting gap as well as another superconducting gap of $\sim$ 0.5 meV. From our analysis of electronic structure, we show that the smaller gap is formed in the topological surface states in YRuB$_2$ due to the proximity of the bulk superconducting condensate. Thus, in agreement with the past theoretical predictions, we present YRuB$_2$ as a unique system that hosts superconducting topological surface states.
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Submitted 18 May, 2024; v1 submitted 15 September, 2023;
originally announced September 2023.
