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$h/e$ superconducting quantum interference through trivial edge states in InAs
Authors:
Folkert K. de Vries,
Tom Timmerman,
Viacheslav P. Ostroukh,
Jasper van Veen,
Arjan J. A. Beukman,
Fanming Qu,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID…
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Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.
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Submitted 18 September, 2017; v1 submitted 12 September, 2017;
originally announced September 2017.
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Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
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Submitted 11 April, 2017;
originally announced April 2017.
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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Authors:
Fanming Qu,
Jasper van Veen,
Folkert K. de Vries,
Arjan J. A. Beukman,
Michael Wimmer,
Wei Yi,
Andrey A. Kiselev,
Binh-Minh Nguyen,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum w…
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Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
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Submitted 18 August, 2016;
originally announced August 2016.
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A non-invasive method for nanoscale electrostatic gating of pristine materials
Authors:
Arjan J. A. Beukman,
Fanming Qu,
Ken W. West,
Loren N. Pfeiffer,
Leo P. Kouwenhoven
Abstract:
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanow…
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Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nano-processing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-Pérot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material.
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Submitted 18 August, 2016;
originally announced August 2016.
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Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Authors:
Binh-Minh Nguyen,
Andrey A. Kiselev,
Ramsey Noah,
Wei Yi,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Morten Kjaergaard,
Henri J. Suominen,
Fabrizio Nichele,
Charles M. Marcus,
Michael J. Manfra,
Marko Sokolich
Abstract:
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance f…
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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.
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Submitted 16 May, 2016;
originally announced May 2016.
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Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Authors:
Fabrizio Nichele,
Morten Kjaergaard,
Henri J. Suominen,
Rafal Skolasinski,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Fanming Qu,
Arjan J. A. Beukman,
Leo P. Kouwenhoven,
Charles M. Marcus
Abstract:
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like state…
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Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
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Submitted 24 November, 2016; v1 submitted 4 May, 2016;
originally announced May 2016.
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Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
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Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
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Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Authors:
Fanming Qu,
Arjan J. A. Beukman,
Stevan Nadj-Perge,
Michael Wimmer,
Binh-Minh Nguyen,
Wei Yi,
Jacob Thorp,
Marko Sokolich,
Andrey A. Kiselev,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and c…
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Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
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Submitted 19 February, 2015;
originally announced February 2015.
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Edge-mode Superconductivity in a Two Dimensional Topological Insulator
Authors:
Vlad S. Pribiag,
Arjan J. A. Beukman,
Fanming Qu,
Maja C. Cassidy,
Christophe Charpentier,
Werner Wegscheider,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge mo…
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Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference, we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the 2D topological phase. These experiments establish InAs/GaSb as a robust platform for further confinement of Majoranas into localized states enabling future investigations of non-Abelian statistics.
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Submitted 7 August, 2014;
originally announced August 2014.
