Showing 1–47 of 47 results for author: Beere, H E

Landau Level Single-Electron Pum**

Authors: E. Pyurbeeva, M. D. Blumenthal, J. A. Mol, H. Howe, H. E. Beere, T. Mitchell, D. A. Ritchie, M. Pepper

Abstract: We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnik… ▽ More We present the first detailed study of the effect of a strong magnetic field on single-electron pum** in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pum** from Landau levels in the leads, where the measurements exhibit pronounced oscillations in the lengths of the pum** plateaus with the magnetic field, reminiscent of Shubnikov-de Haas oscillations. This similarity indicates that the pum** process is dependent on the density of states of the 2D electron gas over a narrow energy window. Based on these observations, we develop a new theoretical description of the operation of single-electron pumps which for the first time allows for the determination of the physical parameters of the experiment; such as the capture energy of the electrons, the broadening of the quantised Landau levels in the leads, and the quantum lifetime of the electrons. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing

Authors: Pengcheng Ma, Kaveh Delfanazari, Reuben K. Puddy, Jiahui Li, Moda Cao, Teng Yi, Jonathan P. Griffiths, Harvey E. Beere, David A. Ritchie, Michael J. Kelly, Charles G. Smith

Abstract: The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and… ▽ More The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy

Authors: Bikash C. Barik, Himadri Chakraborti, Aditya K. Jain, Buddhadeb Pal, H. E. Beere, D. A. Ritchie, K. Das Gupta

Abstract: A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance… ▽ More A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 6 pages, 5 figures, supplementary material attached. Comments are welcome

Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial

Authors: Ruqiao Xia, Nikita W. Almond, Stephen J. Kindness, Sergey A. Mikhailov, Wadood Tadbier, Riccardo Degl'Innocenti, Yuezhen Lu, Abbie Lowe, Ben Ramsay, Lukas A. Jakob, James Dann, Stephan Hofmann, Harvey E. Beere, David A. Ritchie, Wladislaw Michailow

Abstract: Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly… ▽ More Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Comments: 16 pages, 5 figures

Theory of the in-plane photoelectric effect in two-dimensional electron systems

Authors: S. A. Mikhailov, W. Michailow, H. E. Beere, D. A. Ritchie

Abstract: A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et al., Sci. Adv. \textbf{8}, eabi8398 (2022)). In contrast to the conventional PE phenomena, the IPPE effect is observed at normal incidence of radiation, the height… ▽ More A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et al., Sci. Adv. \textbf{8}, eabi8398 (2022)). In contrast to the conventional PE phenomena, the IPPE effect is observed at normal incidence of radiation, the height of the in-plane potential step, which electrons overcome after absorption of a THz photon, is electrically tunable by gate voltages, and the effect is maximal at a negative electron ``work function'', when the Fermi energy lies above the potential barrier. Based on the discovered phenomenon, efficient detection of THz radiation has been demonstrated. In this work we present a detailed theory of the IPPE effect providing analytical results for the THz wave generated photocurrent, the quantum efficiency, and the internal responsivity of the detector, in dependence on the frequency, the gate voltages, and the geometrical parameters of the detector. The calculations are performed for macroscopically wide samples at zero temperature. Results of the theory are applicable to any semiconductor systems with 2D electron gases, including III-V structures, silicon-based field effect transistors, and the novel 2D layered, graphene-related materials. △ Less

Submitted 23 August, 2022; v1 submitted 29 October, 2021; originally announced October 2021.

Comments: 22 pages, 15 figures, accepted for publication version

Journal ref: Physical Review B 106, 075411 (2022)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

An in-plane photoelectric effect in two-dimensional electron systems for terahertz detection

Authors: Wladislaw Michailow, Peter Spencer, Nikita W. Almond, Stephen J. Kindness, Robert Wallis, Thomas A. Mitchell, Riccardo Degl'Innocenti, Sergey A. Mikhailov, Harvey E. Beere, David A. Ritchie

Abstract: The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we r… ▽ More The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we report on the discovery of an in-plane photoelectric effect occurring within a two-dimensional electron gas. In this purely quantum-mechanical, scattering-free process, photo-electron momenta are perfectly aligned with the desired direction of motion. The "work function" is artificially created and tunable in-situ. The phenomenon is utilized to build a direct terahertz detector, which yields a giant zero-bias photoresponse that exceeds the predictions by known mechanisms by more than 10-fold. This new aspect of light-matter interaction in two-dimensional systems paves the way towards a new class of highly efficient photodetectors covering the entire terahertz range. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Comments: 18 pages, 5 figures

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

Authors: Shun-Tsung Lo, Chin-Hung Chen, Ju-Chun Fan, L. W. Smith, G. L. Creeth, Che-Wei Chang, M. Pepper, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, Tse-Ming Chen

Abstract: The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a t… ▽ More The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a time. Here we demonstrate that the spatial spin splitting of a coherent beam of electrons can be achieved and controlled using the interplay between an external magnetic field and Rashba spin-orbit interaction in semiconductor nanostructures. The technique of transverse magnetic focusing is used to detect this spin separation. More notably, our ability to engineer the spin-orbit interactions enables us to simultaneously manipulate and probe the coherent spin dynamics of both spin species and hence their correlation, which could open a route towards spintronics and spin-based quantum information processing. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: 15 pages, 4 figures

Journal ref: Nature Communications 8, 15997 (2017)

A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems

Authors: Ugo Siciliani de Cumis, Joanna Waldie, Andrew F. Croxall, Deepyanti Taneja, Justin Llandro, Ian Farrer, Harvey E. Beere, David A. Ritchie

Abstract: We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h… ▽ More We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case. △ Less

Submitted 27 November, 2016; originally announced November 2016.

Comments: 5 pages, 4 figures

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

Authors: B. Zheng, A. F. Croxall, J. Waldie, K. Das Gupta, F. Sfigakis, I. Farrer, H. E. Beere, D. A. Ritchie

Abstract: We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interactin… ▽ More We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs. △ Less

Submitted 3 January, 2016; v1 submitted 27 November, 2015; originally announced November 2015.

Comments: 4 pages, 3 figures

All-electric all-semiconductor spin field effect transistors

Authors: Pojen Chuang, Sheng-Chin Ho, L. W. Smith, F. Sfigakis, M. Pepper, Chin-Hung Chen, Ju-Chun Fan, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, Tse-Ming Chen

Abstract: The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to re… ▽ More The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins -- spin injection, manipulation, and detection -- in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Journal ref: Nature Nanotechnology 10, 35-39 (2015)

Single-photon superradiance from a quantum dot

Authors: P. Tighineanu, R. S. Daveau, T. B. Lehmann, H. E. Beere, D. A. Ritchie, P. Lodahl, S. Stobbe

Abstract: We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the su… ▽ More We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a five-fold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies. △ Less

Submitted 14 April, 2016; v1 submitted 18 June, 2015; originally announced June 2015.

Comments: 15 pages, 11 figures

Journal ref: Phys. Rev. Lett. 116, 163604 (2016)

Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires

Authors: L. W. Smith, H. Al-Taie, A. A. J. Lesage, F. Sfigakis, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, A. R. Hamilton, M. J. Kelly, C. G. Smith

Abstract: Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that… ▽ More Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B. △ Less

Submitted 1 June, 2015; v1 submitted 4 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 91, 23540 (2015)

Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly

Authors: L. W. Smith, H. Al-Taie, F. Sfigakis, P. See, A. A. J. Lesage, B. Xu, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum… ▽ More The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 045426 (2014)

A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices

Authors: H. Al-Taie, L. W. Smith, B. Xu, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the m… ▽ More Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible. △ Less

Submitted 22 July, 2014; originally announced July 2014.

Comments: Proceedings of the 10th International Workshop on Low-Temperature Electronics, pp. 75 - 80 (2013). Available: http://wolte10.lpn.cnrs.fr/FILES/proceedings_6dec2013.pdf

Landau level spin diode in a GaAs two dimensional hole system

Authors: O. Klochan, A. R. Hamilton, K. das Gupta, F. Sfigakis, H. E. Beere, D. A. Ritchie

Abstract: We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems… ▽ More We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems. △ Less

Submitted 15 June, 2014; originally announced June 2014.

Anomalous critical fields in quantum critical superconductors

Authors: C. Putzke, P. Walmsley, J. D. Fletcher, L. Malone, D. Vignolles, C. Proust, S. Badoux, P. See, H. E. Beere, D. A. Ritchie, S. Kasahara, Y. Mizukami, T. Shibauchi, Y. Matsuda, A. Carrington

Abstract: Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critic… ▽ More Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critical superconductor, and so it is a particularly suitable system in which to study how the quantum critical fluctuations affect the superconducting state. Here we show that the proximity of the QCP yields unexpected anomalies in the superconducting critical fields. We find that both the lower and upper critical fields strongly violate the expectations from the conventional theory taking into account the observed mass enhancement near the QCP. These anomalous behaviours of the critical fields imply that the energy of superconducting vortices is enhanced, possibly due to a microscopic mixing of antiferromagnetism and superconductivity, suggesting that a highly unusual vortex state is realised in quantum critical superconductors. △ Less

Submitted 15 December, 2014; v1 submitted 6 February, 2014; originally announced February 2014.

Comments: 9 pages

Journal ref: Nature Communications 5,5679 (2014)

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

Authors: H. Al-Taie, L. W. Smith, B. Xu, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plate… ▽ More We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Journal ref: Appl. Phys. Lett. 102, 243102 (2013)

Y coupled terahertz quantum cascade lasers

Authors: Owen P. Marshall, Subhasish Chakraborty, Md. Khairuzzaman, Harvey E. Beere, David A. Ritchie

Abstract: Here we demonstrate a Y coupled terahertz (THz) quantum cascade laser (QCL) system. The two THz QCLs working around 2.85 THz are driven by independent electrical pulsers. Total peak THz output power of the Y system, with both arms being driven synchronously, is found to be more than the linear sum of the peak powers from the individual arms; 10.4 mW compared with 9.6 mW (4.7 mW + 4.9 mW). Furtherm… ▽ More Here we demonstrate a Y coupled terahertz (THz) quantum cascade laser (QCL) system. The two THz QCLs working around 2.85 THz are driven by independent electrical pulsers. Total peak THz output power of the Y system, with both arms being driven synchronously, is found to be more than the linear sum of the peak powers from the individual arms; 10.4 mW compared with 9.6 mW (4.7 mW + 4.9 mW). Furthermore, we demonstrate that the emission spectra of this coupled system are significantly different to that of either arm alone, or to the linear combination of their individual spectra. △ Less

Submitted 5 June, 2012; originally announced June 2012.

Comments: 9 pages, 3 figures

Longitudinal Computer Generated Holograms for Digital Frequency Control in Electronically Tunable Terahertz Lasers

Authors: Subhasish Chakraborty, Owen P. Marshall, Md. Khairuzzaman, Harvey E. Beere, David A. Ritchie

Abstract: A transverse computer-generated hologram (CGH) diffracts and provides flexible control of incident light by steering it to any point in the projected image plane - i.e. CGHs are able to direct the light to where it is needed and away from where it is not. In addition, the number of resolvable points in the image projection plane is a function of the CGH's pixel count. Here we report a longitudinal… ▽ More A transverse computer-generated hologram (CGH) diffracts and provides flexible control of incident light by steering it to any point in the projected image plane - i.e. CGHs are able to direct the light to where it is needed and away from where it is not. In addition, the number of resolvable points in the image projection plane is a function of the CGH's pixel count. Here we report a longitudinal CGH (LCGH), a photonic structure, which swaps the ability to steer light toward fixed spatial points for digital control in the frequency domain. This is of particular interest in the context of tunable lasers. In this regard, an LCGH offers two important degrees-of-freedom (DOFs): 1) provides high-resolution wavevector or k space resolution within the Brillouin zone; 2) enables full control to define or modify the reflectivity at each resolvable k point, so attaining a target spectral response. We demonstrate the flexibility of our LCGH approach by achieving purely electronic tuning between six digitally-selected operating frequencies in a single section terahertz (THz) quantum cascade laser (QCL). These switchable single-frequency devices will simplify combining the power and flexibility of THz QCLs with spectroscopic applications, such as remote sensing, spectral analysis, and both security and medical imaging. △ Less

Submitted 14 May, 2012; originally announced May 2012.

Comments: 17 pages, 4 Figures, submitted to Nature Photonics

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Authors: W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie

Abstract: We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be… ▽ More We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). △ Less

Submitted 16 March, 2013; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 4 pages, 4 figures; added figures, references, equations, and text; results/conclusions otherwise unchanged

Journal ref: Applied Physics Letters 102, 103507 (2013)

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Authors: K. Das Gupta, A. F. Croxall, W. Y. Mak, H. E. Beere, C. A. Nicoll, I. Farrer, F. Sfigakis, D. A. Ritchie

Abstract: Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped… ▽ More Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities. △ Less

Submitted 18 November, 2011; originally announced November 2011.

Comments: 4 pages, 3 eps figures

Lasing in planar semiconductor diodes

Authors: Giorgio De Simoni, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Anti-bunched photons from a lateral light-emitting diode

Authors: Tommaso Lunghi, Giorgio De Simoni, Vincenzo Piazza, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we bel… ▽ More We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems. △ Less

Submitted 22 September, 2011; originally announced September 2011.

Stabilization of single-electron pumps by high magnetic fields

Authors: J. D. Fletcher, M. Kataoka, S. P. Giblin, Sunghun Park, H. -S. Sim, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, H. E. Beere, D. A. Ritchie

Abstract: We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati… ▽ More We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization. △ Less

Submitted 31 August, 2012; v1 submitted 22 July, 2011; originally announced July 2011.

Enhancement of edge channel transport by a low frequency irradiation

Authors: A. D. Chepelianskii, J. Laidet, I. Farrer, H. E. Beere, D. A. Ritchie, H. Bouchiat

Abstract: The magnetotransport properties of high mobility two dimensional electron gas have recently attracted a significant interest due to the discovery of microwave induced zero resistance states. Here we show experimentally that microwave irradiation with a photon energy much smaller than the spacing between Landau levels can induce a strong decrease in the four terminal resistance. This effect is not… ▽ More The magnetotransport properties of high mobility two dimensional electron gas have recently attracted a significant interest due to the discovery of microwave induced zero resistance states. Here we show experimentally that microwave irradiation with a photon energy much smaller than the spacing between Landau levels can induce a strong decrease in the four terminal resistance. This effect is not predicted by the bulk transport models introduced to explain zero resistance states, but can be naturally explained by an edge transport model. This highlights the importance of edge channels for zero resistance state physics that was proposed recently. △ Less

Submitted 3 September, 2012; v1 submitted 11 February, 2011; originally announced February 2011.

Journal ref: Phys. Rev. B 86, 205108 (2012)

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

Authors: W. Y. Mak, K. Das Gupta, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie

Abstract: We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentra… ▽ More We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation do** due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants. △ Less

Submitted 6 July, 2010; originally announced July 2010.

Comments: 4 pages, 5 eps figures

Journal ref: Applied Physics Letters 97, 242107 (2010)

Nuclear spin coherence in a quantum wire

Authors: A. Corcoles, C. J. B. Ford, M. Pepper, G. A. C. Jones, H. E. Beere, D. A. Ritchie

Abstract: We have observed millisecond-long coherent evolution of nuclear spins in a quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is achieved by dynamic nuclear polarization in the breakdown regime of the Integer Quantum Hall Effect combined with pulsed Nuclear Magnetic Resonance. The excitation thresholds for the breakdown are significantly smaller than what would be expecte… ▽ More We have observed millisecond-long coherent evolution of nuclear spins in a quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is achieved by dynamic nuclear polarization in the breakdown regime of the Integer Quantum Hall Effect combined with pulsed Nuclear Magnetic Resonance. The excitation thresholds for the breakdown are significantly smaller than what would be expected for our sample and the direction of the nuclear polarization can be controlled by the voltage bias. As a four-level spin system, the device is equivalent to two qubits. △ Less

Submitted 30 September, 2009; v1 submitted 22 June, 2009; originally announced June 2009.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 80, 115326 (2009)

Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime,… ▽ More We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)] △ Less

Submitted 27 October, 2009; v1 submitted 17 December, 2008; originally announced December 2008.

Comments: 5 pages + 3 EPS figures (replaced with published version)

Journal ref: PRB 80, 125323 (2009)

Magnetic Field Induced Instabilities in Localised Two-Dimensional Electron Systems

Authors: M. Baenninger, A. Ghosh, M. Pepper, H. E. Beere, I. Farrer, D. A. Ritchie

Abstract: We report density dependent instabilities in the localised regime of mesoscopic two-dimensional electron systems (2DES) with intermediate strength of background disorder. They are manifested by strong resistance oscillations induced by high perpendicular magnetic fields B_{\perp}. While the amplitude of the oscillations is strongly enhanced with increasing B_{\perp}, their position in density re… ▽ More We report density dependent instabilities in the localised regime of mesoscopic two-dimensional electron systems (2DES) with intermediate strength of background disorder. They are manifested by strong resistance oscillations induced by high perpendicular magnetic fields B_{\perp}. While the amplitude of the oscillations is strongly enhanced with increasing B_{\perp}, their position in density remains unaffected. The observation is accompanied by an unusual behaviour of the temperature dependence of resistance and activation energies. We suggest the interplay between a strongly interacting electron phase and the background disorder as a possible explanation. △ Less

Submitted 14 October, 2008; originally announced October 2008.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 78, 161306(R) (2008)

Low Temperature Transport in Undoped Mesoscopic Structures

Authors: S. Sarkozy, K. Das Gupta, C. Siegert, A. Ghosh, M. Pepper, I. Farrer, H. E. Beere, D. A. Ritchie, G. A. C. Jones

Abstract: Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These result… ▽ More Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices. △ Less

Submitted 17 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 EPS figs

Anomalous Coulomb drag in electron-hole bilayers

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measure… ▽ More We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measurements are within the linear response regime. Correlated phases have been anticipated in these, but surprisingly, the experimental results appear to contradict Onsager's reciprocity theorem. △ Less

Submitted 27 October, 2009; v1 submitted 1 July, 2008; originally announced July 2008.

Comments: 4 pages, 5 EPS figures (replaced with published version)

Journal ref: PRL 101, 246801 (2008)

Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

Authors: J. A. Keogh, K. Das Gupta, H. E. Beere, D. A. Ritchie, M. Pepper

Abstract: We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility… ▽ More We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 EPS figures

Journal ref: APL 87, 202104 (2005)

Low-Temperature Collapse of Electron Localisation in Two Dimensions

Authors: M. Baenninger, A. Ghosh, M. Pepper, H. E. Beere, I. Farrer, D. A. Ritchie

Abstract: We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from insulating to metal-like transport behaviour is observed, which persists even when the resistivity of the system greatly exceeds the quantum of resistivity h/e^2. The… ▽ More We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from insulating to metal-like transport behaviour is observed, which persists even when the resistivity of the system greatly exceeds the quantum of resistivity h/e^2. The results have been achieved by measuring transport on a mesoscopic length-scale while systematically varying the strength of disorder. △ Less

Submitted 9 November, 2007; originally announced November 2007.

Comments: 6 pages, 4 figures To appear in PRL

Journal ref: Phys. Rev. Lett. 100, 016805 (2008)

Quantisation of Hop** Magnetoresistance Prefactor in Strongly Correlated Two-Dimensional Electron Systems

Authors: Matthias Baenninger, Arindam Ghosh, Michael Pepper, Harvey E. Beere, Ian Farrer, Paula Atkinson, Dave A. Ritchie

Abstract: We report an universal behaviour of hop** transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the expected relation $ρ(B_\perp) = ρ_{\rm{B}}\exp(αB_\perp^2)$. The prefactor $ρ_{\rm{B}}$ decreases exponentially with increasing electron density but saturates… ▽ More We report an universal behaviour of hop** transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the expected relation $ρ(B_\perp) = ρ_{\rm{B}}\exp(αB_\perp^2)$. The prefactor $ρ_{\rm{B}}$ decreases exponentially with increasing electron density but saturates to a finite value at higher densities. Strikingly, this value is found to be universal when expressed in terms of absolute resistance and and shows quantisation at $R_{\rm{B}}\approx h/e^2$ and $R_{\rm{B}}\approx 1/2$ $ h/e^2$. We suggest a strongly correlated electronic phase as a possible explanation. △ Less

Submitted 27 July, 2007; v1 submitted 24 July, 2007; originally announced July 2007.

Comments: 5 pages, 3 figures, Proceedings of EP2DS 17, Reference added

Local transport in a disorder-stabilized correlated insulating phase

Authors: M. Baenninger, A. Ghosh, M. Pepper, H. E. Beere, I. Farrer, P. Atkinson, D. A. Ritchie

Abstract: We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hop** transport mechanism. Transport in this regime is determined only by the average electron separation, i… ▽ More We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hop** transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by mutual interplay of disorder and Coulomb interaction. △ Less

Submitted 28 October, 2005; originally announced October 2005.

Comments: 4+delta pages, 4 figures, To appear in the Physical Review B (Rapid Comm)

Acoustic charge transport in n-i-n three terminal device

Authors: Marco Cecchini, Giorgio De Simoni, Vincenzo Piazza, Fabio Beltram, H. E. Beere, D. A. Ritchie

Abstract: We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pic… ▽ More We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pick up electrons from a current flowing through the n-i-n junction and steer them toward the output contact. Acoustic charge transport was studied as a function of the injector current and bias, the SAW power and at various temperatures. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage or current sources, thus allowing to sample and process voltage and current signals as well. △ Less

Submitted 25 October, 2005; originally announced October 2005.

Comments: 9 pages, 3 figures. Submitted to Applied Physics Letters

Ultra low threshold current THz quantum cascade lasers based on buried strip-waveguides

Authors: S. Dhillon, J. Alton, S. Barbieri, C. Sirtori, A. de Rossi, M. Calligaro, H. E. Beere, D. Ritchie

Abstract: THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19 mA at 4K in both pulsed and continuous wave operation. Thanks to the semiconductor material on both sides of the active region and to the narrow width of the… ▽ More THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19 mA at 4K in both pulsed and continuous wave operation. Thanks to the semiconductor material on both sides of the active region and to the narrow width of the top metal strip, the thermal properties of these devices have been greatly improved. A decrease of the thermal resistance by over a factor of two compared to standard ridge double-metal lasers of similar size has been measured. △ Less

Submitted 8 March, 2005; originally announced March 2005.

Comments: 10 pages, 3 figures. Submitted for publication to Applied Physiscs Letters (February 2005)

Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices

Authors: Marco Cecchini, Vincenzo Piazza, Fabio Beltram, D. G. Gevaux, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie

Abstract: Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts. Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts. △ Less

Submitted 7 January, 2005; originally announced January 2005.

Comments: 4 pages, 3 figures

A dynamic localization of 2D electrons at mesoscopic length scales

Authors: A. Ghosh, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate the spatial concentration of localized states within a mesoscopic region of the samples. An independent measurement of the electron density within the same reg… ▽ More We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate the spatial concentration of localized states within a mesoscopic region of the samples. An independent measurement of the electron density within the same region shows an unexpected correspondence between the density of electrons in the metallic regime and that of the localized states in the insulating phase. We have argued that this correspondence manifests a rigid distribution of electrons at low densities. △ Less

Submitted 22 March, 2004; originally announced March 2004.

Comments: 8 pages (incl 4 figures), double column

Surface-acoustic-wave driven planar light-emitting device

Authors: Marco Cecchini, Giorgio De Simoni, Vincenzo Piazza, Fabio Beltram, H. E. Beere, D. A. Ritchie

Abstract: Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue tha… ▽ More Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures. △ Less

Submitted 15 March, 2004; originally announced March 2004.

Non-invasive detection of the evolution of the charge states of a double dot system

Authors: A. W. Rushforth, C. G. Smith, M. D. Godfrey, H. E. Beere, D. A. Ritchie, M. Pepper

Abstract: Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation where they are isolated from the leads. Our measurements allow us to identify the movement of electrons between the dots and we can also identify the presenc… ▽ More Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation where they are isolated from the leads. Our measurements allow us to identify the movement of electrons between the dots and we can also identify the presence of a charge trap in our system by detecting the movement of electrons between the dots and the charge trap. The data also reveals evidence of electrons moving between the dots via excited states of either the single dots or the double dot molecule. △ Less

Submitted 2 February, 2004; originally announced February 2004.

Comments: Accepted for publication in Phys. Rev. B. 4 pages, 4 figures

Quantized charge pum** through a quantum dot by surface acoustic waves

Authors: J. Ebbecke, N. E. Fletcher, T. J. B. M. Janssen, F. J. Ahlers, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We present a realization of quantized charge pum**. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amp… ▽ More We present a realization of quantized charge pum**. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the fermi level of the electron reservoirs during the pum** cycle. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 8 pages

Possible evidence of a spontaneous spin-polarization in mesoscopic 2D electron systems

Authors: A. Ghosh, C. J. B. Ford, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We have experimentally studied the non-equilibrium transport in low-density clean 2D electron systems at mesoscopic length scales. At zero magnetic field (B), a double-peak structure in the non-linear conductance was observed close to the Fermi energy in the localized regime. From the behavior of these peaks at non-zero B, we could associate them to the opposite spin states of the system, indica… ▽ More We have experimentally studied the non-equilibrium transport in low-density clean 2D electron systems at mesoscopic length scales. At zero magnetic field (B), a double-peak structure in the non-linear conductance was observed close to the Fermi energy in the localized regime. From the behavior of these peaks at non-zero B, we could associate them to the opposite spin states of the system, indicating a spontaneous spin polarization at B = 0. Detailed temperature and disorder dependence of the structure shows that such a splitting is a ground state property of the low-density 2D systems. △ Less

Submitted 27 October, 2003; originally announced October 2003.

Comments: 7 pages, 5 figures

Imaging Fractal Conductance Fluctuations and Scarred Wave Functions in a Quantum Billiard

Authors: R. Crook, C. G. Smith, A. C. Graham, I. Farrer, H. E. Beere, D. A. Ritchie

Abstract: We present scanning-probe images and magnetic-field plots which reveal fractal conductance fluctuations in a quantum billiard. The quantum billiard is drawn and tuned using erasable electrostatic lithography, where the scanning probe draws patterns of surface charge in the same environment used for measurements. A periodicity in magnetic field, which is observed in both the images and plots, sug… ▽ More We present scanning-probe images and magnetic-field plots which reveal fractal conductance fluctuations in a quantum billiard. The quantum billiard is drawn and tuned using erasable electrostatic lithography, where the scanning probe draws patterns of surface charge in the same environment used for measurements. A periodicity in magnetic field, which is observed in both the images and plots, suggests the presence of classical orbits. Subsequent high-pass filtered high-resolution images resemble the predicted probability density of scarred wave functions, which describe the classical orbits. △ Less

Submitted 27 October, 2003; originally announced October 2003.

Comments: 5 pages, 4 figures To be published in PRL

Quantized charge transport through a static quantum dot using a surface acoustic wave

Authors: N. E. Fletcher, J. Ebbecke, T. J. B. M. Janssen, F. J. Ahlers, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized transport is observed at low RF powers where the surface acoustic wave amplitude is comparable to the quantum dot charging energy. In this regime resonant transp… ▽ More We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized transport is observed at low RF powers where the surface acoustic wave amplitude is comparable to the quantum dot charging energy. In this regime resonant transport through the single-electron dot state occurs which we interpret as turnstile-like operation in which the traveling wave amplitude modulates the entrance and exit barriers of the quantum dot in a cyclic fashion at GHz frequencies. For high RF powers, where the amplitude of the surface acoustic wave is much larger than the quantum dot energies, the quantized acoustoelectric current transport shows behavior consistent with previously reported results. However, in this regime, the number of quantized current plateaus observed and the plateau widths are determined by the properties of the quantum dot, demonstrating that the microscopic detail of the potential landscape in the split gate channel has a profound influence on the quantized acoustoelectric current transport. △ Less

Submitted 20 August, 2003; originally announced August 2003.

Comments: 9 pages

High-performance planar light-emitting diode

Authors: Marco Cecchini, Vincenzo Piazza, Fabio Beltram, Marco Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie

Abstract: Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaA… ▽ More Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range. △ Less

Submitted 31 July, 2002; originally announced July 2002.

Comments: 5 pages, 3 figures