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Nanoscale single-electron box with a floating lead for quantum sensing: modelling and device characterization
Authors:
Nikolaos Petropoulos,
Xutong Wu,
Andrii Sokolov,
Panagiotis Giounanlis,
Imran Bashir,
Mike Asker,
Dirk Leipold,
Andrew K. Mitchell,
Robert B. Staszewski,
Elena Blokhina
Abstract:
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically empl…
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We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for sensing and precise injection of electrons into an electrostatically formed QD. To analyse the SEB, we propose an extended multi-orbital Anderson impurity model (MOAIM), adapted to our nanoscale SEB system, that is used to predict theoretically the behaviour of the SEB in the context of a charge-sensing application. The validation of the model and the sensing technique has been carried out on a QD fabricated in a fully depleted silicon on insulator (FDSOI) process on a 22-nm technological node. We demonstrate the MOAIM's efficacy in predicting the observed electronic behavior and elucidating the complex electron dynamics and correlations in the SEB. The results of our study reinforce the versatility and precision of the model in the realm of nanoelectronics and highlight the practical utility of the metallic floating node as a mechanism for charge injection and detection in integrated QDs. Finally, we identify the limitations of our model in capturing higher-order effects observed in our measurements and propose future outlooks to reconcile some of these discrepancies.
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Submitted 23 April, 2024;
originally announced April 2024.
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Simulation Methodology for Electron Transfer in CMOS Quantum Dots
Authors:
Andrii Sokolov,
Dmytro Mishagli,
Panagiotis Giounanlis,
Imran Bashir,
Dirk Leipold,
Eugene Koskin,
R. Bogdan Staszewski,
Elena Blokhina
Abstract:
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor…
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The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.
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Submitted 24 June, 2020;
originally announced June 2020.
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Properties of Coupled Single-Electron Lines
Authors:
Krzysztof Pomorski,
Panagiotis Giounanlis,
Elena Blokhina,
Imran Bashir,
Dirk Leipold,
Robert Bogdan Staszewski
Abstract:
Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference…
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Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference with two capacitively coupled classical electrical lines. The derived equations and their solutions prove that the two coupled SET lines can create an entanglement between electrons. The results indicate a possibility of constructing electrostatic (non-spin) coupled qubits that could be used as building blocks in a CMOS quantum computer.
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Submitted 9 May, 2019; v1 submitted 14 April, 2019;
originally announced April 2019.
