Showing 1–49 of 49 results for author: Barnes, C

Charge qubits based on ultra-thin topological insulator films

Authors: Kexin Zhang, Hugo V. Lepage, Ying Dong, Crispin H. W. Barnes

Abstract: We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit… ▽ More We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit can be initialized and manipulated using electric pulses of simple forms, (iii) two-qubit entanglement is achieved through a $\sqrt{\text{SWAP}}$ operation when the two qubits are in a parallel setup, and (iv) alternatively, a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation. The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied, and the single qubit operations are controlled by amplitude modulation of the oscillating field, which is convenient experimentally. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 12 pages, 9 figures, submitted to the journal Frontiers of Physics

Pulse-controlled qubit in semiconductor double quantum dots

Authors: Aleksander Lasek, Hugo V. Lepage, Kexin Zhang, Thierry Ferrus, Crispin H. W. Barnes

Abstract: We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and a… ▽ More We present a numerically-optimized multipulse framework for the quantum control of a single-electron charge qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 9 pages, 9 figures

Engineering single donor detectors in doped silicon

Authors: A. A. Lasek, C. H. W. Barnes, T. Ferrus

Abstract: We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier w… ▽ More We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot. △ Less

Submitted 1 September, 2022; v1 submitted 21 November, 2021; originally announced November 2021.

Comments: 10 pages, supplementary information available on demand, new version as accepted for publication in PRB

Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene

Authors: R. O. M. Aboljadayel, A. Ionescu, O. J. Burton, G. Cheglakov, S. Hofmann, C. H. W. Barnes

Abstract: We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that gr… ▽ More We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO$_2$ substrate. The SQUID measurements show that both films have a Curie temperature of about 5.5 K, with a magnetic moment of 0.0032 emu/g at 2 K. The mixed-valency of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu$^{2+}$ : Eu$^{3+}$ ratio of 28 : 72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the Raman spectroscopy scans show that the growth of the Eu$_3$O$_4$ thin films has no damaging effect on the underlayer graphene sheet. Therefore, the graphene layer is expected to retain its properties. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: 16 pages, 9 figures

Journal ref: Nanomaterials 2021, 11(6), 1598

Table-like magnetocaloric effect and enhanced refrigerant capacity in EuO1-δ thin films

Authors: P. Lampen, R. Madhogaria, N. S. Bingham, M. H. Phan, P. M. S. Monteiro, N. -J. Steinke, A. Ionescu, C. H. W. Barnes, H. Srikanth

Abstract: An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-δ thin films through control of oxygen vacancies (δ = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transition… ▽ More An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-δ thin films through control of oxygen vacancies (δ = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce table-like magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range. △ Less

Submitted 13 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Materials 5, 094404 (2021)

Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators

Authors: N. B. Devlin, T. Ferrus, C. H. W. Barnes

Abstract: We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that… ▽ More We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that the parity of the number of layers in a multilayer sample has on the electronic dispersion. In particular, the alignment of the magnetisation vectors on the terminating surfaces of odd layer samples affords particle-hole symmetry leading to the presence of linearly dispersing topologically non-trivial states around $E = 0$. By contrast, the lack of particle-hole symmetry in even layer samples results in a gapped system, with spin-polarised flat-bands appearing either side of a band gap, with characteristic energy well within terahertz energy scales. In addition to being a versatile platform for the development of spintronic devices, when many-body interactions are accounted for we predict that these flat-bands will host strong correlations capable of driving the system into novel topological phases. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 104, 054433 (2021)

Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism

Authors: R. O. M. Aboljadayel, C. J. Kinane, C. A. F. Vaz, D. M. Love, R. S. Weatherup, P. Braeuninger-Weimer, M. -B. Martin, A. Ionescu, A. J. Caruana, T. R. Charlton, J. Llandro, P. M. S. Monteiro, C. H. W. Barnes, S. Hofmann, S. Langridge

Abstract: We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to… ▽ More We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization. △ Less

Submitted 21 March, 2022; v1 submitted 25 January, 2021; originally announced January 2021.

Comments: 21 pages, 7 figures

Non-planar geometrical effects on the magnetoelectrical signal in a three-dimensional nanomagnetic circuit

Authors: Fanfan Meng, Claire Donnelly, Claas Abert, Luka Skoric, Stuart Holmes, Zhuocong Xiao, Jung-Wei Liao, Peter J. Newton, Crispin H. W. Barnes, Dédalo Sanz-Hernández, Aurelio Hierro-Rodriguez, Dieter Suess, Russell P. Cowburn, Amalio Fernández-Pacheco

Abstract: Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a micr… ▽ More Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a microelectronic circuit using direct-write nanofabrication. Due to the 3D vectorial nature of both electrical current and magnetisation, a complex superposition of several magnetoelectrical effects takes place. By performing electrical measurements under the application of 3D magnetic fields, in combination with macrospin simulations and finite element modelling, we disentangle the superimposed effects, finding how a 3D geometry leads to unusual angular dependences of well-known magnetotransport effects such as the anomalous Hall effect. Crucially, our analysis also reveals a strong role of the noncollinear demagnetising fields intrinsic to 3D nanostructures, which results in an angular dependent magnon magnetoresistance contributing strongly to the total magnetoelectrical signal. These findings are key to the understanding of 3D spintronic systems and underpin further fundamental and device-based studies. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$

Authors: Kingshuk Mallick, Aditya A. Wagh, Adrian Ionescu, Crispin H. W. Barnes, P. S. Anil Kumar

Abstract: We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance… ▽ More We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low-T in-plane orientation. In addition, considering MR contributions from the films' (111) texture and interface, we identify a T-window wherein the spin Hall effect induced spin Hall magnetoresistance (SMR) could be extracted. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Role of spin mixing conductance in determining thermal spin pum** near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6

Authors: Kingshuk Mallick, Aditya A. Wagh, Adrian Ionescu, Crispin H. W. Barnes, P. S. Anil Kumar

Abstract: We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomal… ▽ More We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomalous Nernst effect (ANE) generated voltage in bare EuO_{1-x}, however, we find LSSE predominates the thermal signals in the bilayers with Pt. The T-dependence of the LSSE in small T-range near Tc could be fitted to a power law of the form (Tc-T)^P. The derived critical exponent, P, was verified for different methods of LSSE representation and sample crystallinity. The results are explained based on the magnon-driven thermal spin pum** mechanism that relate the T-dependence of LSSE to the spin mixing conductance (Gmix) at the heavy metal/ferromagnet (HM/FM) interface, which in turn is known to vary in accordance with the square of the spontaneous magnetization (Ms). Additionally, the T-dependence of the real part of Gmix derived from spin Hall magnetoresistance measurements at different temperatures for the Pt/LNMO structure, further establish the interdependence. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Sound-driven single-electron transfer in a circuit of coupled quantum rails

Authors: Shintaro Takada, Hermann Edlbauer, Hugo V. Lepage, Junliang Wang, Pierre-André Mortemousque, Giorgos Georgiou, Crispin H. W. Barnes, Chris J. B. Ford, Mingyun Yuan, Paulo V. Santos, Xavier Waintal, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle

Abstract: Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we… ▽ More Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits. △ Less

Submitted 23 September, 2019; v1 submitted 2 March, 2019; originally announced March 2019.

Comments: Accepted for Publication in Nature Communications

Journal ref: Nature Communications 10, 4557 (2019)

Crystal Structure Elucidation of the Novel Molecular-Inorganic Polymer $\mathrm{K_{2}SeO_{4}\cdot H_{2}SeO_{3}}$

Authors: Oscar S. Hernández-Daguer, Charles L. Barnes, Samuel P. Hernández-Rivera, Jorge L. Ríos-Steiner

Abstract: The orthorhombic crystal structure of the novel molecular-inorganic polymer $\mathrm{K_{2}SeO_{4}\cdot H_{2}SeO_{3}}$ was elucidated using single-crystal X-ray diffraction with MoK$α$ radiation ($λ$= 0.71073 Å), performed at 100 and 298.15 K. The reported data is at 100 K since there were no structural differences as compared to the room temperature. The technique revealed… ▽ More The orthorhombic crystal structure of the novel molecular-inorganic polymer $\mathrm{K_{2}SeO_{4}\cdot H_{2}SeO_{3}}$ was elucidated using single-crystal X-ray diffraction with MoK$α$ radiation ($λ$= 0.71073 Å), performed at 100 and 298.15 K. The reported data is at 100 K since there were no structural differences as compared to the room temperature. The technique revealed $\mathrm{K_{2}SeO_{4}\cdot H_{2}SeO_{3}}$ crystals to have space group $Pbcm$ with unit cell dimensions $a =$ 8.8672(17) Å, $b =$ 7.3355(14) Å, $c =$ 11.999(2) Å and $Z =$ 4. The unit cell volume obtained was $V =$ 780.5(3) Å$^3$ with a calculated density $D_{c} = 2.980 Mg/m^3$. In $\mathrm{K_{2}SeO_{4}\cdot H_{2}SeO_{3}}$, the selenate anions and selenous acid molecules form an infinite polymeric chain along the \textit{c} axis, through strong hydrogen bonds. That is to say; there are two distinctive species forming a polymeric sequence extended along the \textit{c} axis with an alternating molecule-anion-molecule $\mathrm{(SeO_{4}^{2-}-H_{2}SeO_{3})_{n}}$, defined as a Molecular Inorganic Polymer (MIP). The $\mathrm{K^{+}}$ cations influence the orientation of the $\mathrm{SeO_{4}^{2-}}$ anions, and these consequently affect the arrangement of the $\mathrm{H_{2}SeO_{3}}$ molecules within the structure. The crystal packing forces are governed by ionic and dipole-dipole interaction. Full-matrix least-square refinement method on $F^2$ provide final Reliability indices of $R_{1}$ = 0.0150, and $wR_{2}$ = 0.0377, and a Goodness-of-fit = 1.140; at 0.75 Å resolution, where $R_{int}$ = 0.0230, and $F(000)$ = 656 for 1014 independent reflections ($I>2σ(I)$), from a total of 8,576 reflections collected. △ Less

Submitted 11 January, 2019; originally announced January 2019.

Comments: 27 pages, 7 figures

Machine Learning of Energetic Material Properties

Authors: Brian C. Barnes, Daniel C. Elton, Zois Boukouvalas, DeCarlos E. Taylor, William D. Mattson, Mark D. Fuge, Peter W. Chung

Abstract: In this work, we discuss use of machine learning techniques for rapid prediction of detonation properties including explosive energy, detonation velocity, and detonation pressure. Further, analysis is applied to individual molecules in order to explore the contribution of bonding motifs to these properties. Feature descriptors evaluated include Morgan fingerprints, E-state vectors, a custom "sum o… ▽ More In this work, we discuss use of machine learning techniques for rapid prediction of detonation properties including explosive energy, detonation velocity, and detonation pressure. Further, analysis is applied to individual molecules in order to explore the contribution of bonding motifs to these properties. Feature descriptors evaluated include Morgan fingerprints, E-state vectors, a custom "sum over bonds" descriptor, and coulomb matrices. Algorithms discussed include kernel ridge regression, least absolute shrinkage and selection operator ("LASSO") regression, Gaussian process regression, and the multi-layer perceptron (a neural network). Effects of regularization, kernel selection, network parameters, and dimensionality reduction are discussed. We determine that even when using a small training set, non-linear regression methods may create models within a useful error tolerance for screening of materials. △ Less

Submitted 16 July, 2018; originally announced July 2018.

Comments: Preprint for publication in the Proceedings of the 16th International Detonation Symposium

Structural and magnetic properties of core-shell Au/Fe3O4 nanoparticles

Authors: L. León Fénix J. A. H. Coaquira, M. A. R. Martínez, G. F. Goya, J. Mantilla, M. H. Sousa, L. de los Santos Valladares, C. H. W. Barnes, P. C. Morais

Abstract: We present a systematic study of core-shell Au/Fe_3O_4 nanoparticles produced by thermal decomposition under mild conditions. The morphology and crystal structure of the nanoparticles revealed the presence of Au core of <d> = (6.9\pm 1.0) nm surrounded by Fe_3O_4 shell with a thickness of ~3.5 nm, epitaxially grown onto the Au core surface. The Au/Fe_3O_4 core-shell structure was demonstrated by h… ▽ More We present a systematic study of core-shell Au/Fe_3O_4 nanoparticles produced by thermal decomposition under mild conditions. The morphology and crystal structure of the nanoparticles revealed the presence of Au core of <d> = (6.9\pm 1.0) nm surrounded by Fe_3O_4 shell with a thickness of ~3.5 nm, epitaxially grown onto the Au core surface. The Au/Fe_3O_4 core-shell structure was demonstrated by high angle annular dark field scanning transmission electron microscopy analysis. The magnetite shell grown on top of the Au nanoparticle displayed a thermal blocking state at temperatures below T_B = 59 K and a relaxed state well above T_B. Remarkably, an exchange bias effect was observed when cooling down the samples below room temperature under an external magnetic field. Moreover, the exchange bias field (H_{EX}) started to appear at T~40 K and its value increased by decreasing the temperature. This effect has been assigned to the interaction of spins located in the magnetically disordered regions (in the inner and outer surface of the Fe_3O_4 shell) and spins located in the ordered region of the Fe_3O_4 shell. △ Less

Submitted 19 July, 2017; originally announced July 2017.

Comments: 12 pages, 4 figures

Journal ref: Sci. Reps. 2017. 7:41732

MicroED structure of Au146(p-MBA)57 at subatomic resolution reveals a twinned FCC cluster

Authors: Sandra Vergara, Dylan A. Lukes, Michael W. Martynowycz, Ulises Santiago, German Plascencia-Villa, Simon C. Weiss, M. Jason de la Cruz, David M. Black, Marcos M. Alvarez, Xochitl Lopez-Lozano, Christopher O. Barnes, Guowu Lin, Hans-Christian Weissker, Robert L. Whetten, Tamir Gonen, Guillermo Calero

Abstract: Solving the atomic structure of metallic clusters is fundamental to understanding their optical, electronic, and chemical properties. We report the structure of Au$_{\text{146}}$(p-MBA)$_{\text{57}}$ at subatomic resolution (0.85 Å) using electron diffraction (MicroED) and atomic resolution by X-ray diffraction. The 146 gold atoms may be decomposed into two constituent sets consisting of 119 core… ▽ More Solving the atomic structure of metallic clusters is fundamental to understanding their optical, electronic, and chemical properties. We report the structure of Au$_{\text{146}}$(p-MBA)$_{\text{57}}$ at subatomic resolution (0.85 Å) using electron diffraction (MicroED) and atomic resolution by X-ray diffraction. The 146 gold atoms may be decomposed into two constituent sets consisting of 119 core and 27 peripheral atoms. The core atoms are organized in a twinned FCC structure whereas the surface gold atoms follow a C$_{2}$ rotational symmetry about an axis bisecting the twinning plane. The protective layer of 57 p-MBAs fully encloses the cluster and comprises bridging, monomeric, and dimeric staple motifs. Au$_{\text{146}}$(p-MBA)$_{\text{57}}$ is the largest cluster observed exhibiting a bulk-like FCC structure as well as the smallest gold particle exhibiting a stacking fault. △ Less

Submitted 23 June, 2017; originally announced June 2017.

Comments: S. Vergara, D. A. Lukes, and M. W. Martynowycz contributed equally to this work. Correspondence to: [email protected], [email protected], and [email protected]

Topological states and phase transitions in Sb$_2$Te$_3$-GeTe multilayers

Authors: Thuy-Anh Nguyen, Dirk Backes, Angadjit Singh, Rhodri Mansell, Crispin Barnes, David A. Ritchie, Gregor Mussler, Martin Lanius, Detlev Grützmacher, Vijay Narayan

Abstract: Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact… ▽ More Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking. Here, working with multilayers of the TI Sb$_2$Te$_3$ and the band insulator GeTe, we provide experimental evidence of a multiple topological modes in a single Sb$_2$Te$_3$-GeTe-Sb$_2$Te$_3$ structure. Furthermore, we show that reducing the thickness of the GeTe layer induces a phase transition from a Dirac-like phase to a gapped phase. By comparing different multilayer structures we demonstrate that this transition occurs due to the hybridisation of states associated with different TI films. Our results demonstrate that the Sb$_2$Te$_3$-GeTe system offers strong potential towards manipulating topological states as well as towards controlledly inducing various topological phases. △ Less

Submitted 23 May, 2016; originally announced May 2016.

Comments: Scientific reports (accepted)

Journal ref: Scientific Reports 6, Article number: 27716 (2016)

Ground-state electronic structure of quasi-one-dimensional wires in semiconductor heterostructures

Authors: E. T. Owen, C. H. W. Barnes

Abstract: We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we ex… ▽ More We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we expect our results to apply more generally for other low dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows thereby forming a pair of quantum wires that lie beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate would be valuable. △ Less

Submitted 20 October, 2016; v1 submitted 8 September, 2015; originally announced September 2015.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Applied 6, 054007 (2016)

The elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor La$_{x}$Eu$_{1-x}$O

Authors: Pedro M. S. Monteiro, Peter J. Baker, Nicholas D. M. Hine, Nina-J. Steinke, Adrian Ionescu, Joshaniel F. K. Cooper, Crispin H. W. Barnes, Christian J. Kinane, Zaher Salman, Andrew R. Wildes, Thomas Prokscha, Sean Langridge

Abstract: Here we study the effect of La do** in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in… ▽ More Here we study the effect of La do** in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in $T_{\rm C}$ and an RKKY-like interaction is consistent with the $μ$SR data. The estimation of the magnetic moment by DFT simulations concurs with the results obtained by PNR, showing a reduction of the magnetic moment per La$_{x}$Eu$_{1-x}$O for increasing lanthanum do**. This reduction of the magnetic moment is explained by the reduction of the number of Eu-4$f$ electrons present in all the magnetic interactions in EuO films. Finally, we show that an upwards shift of the Fermi energy with La or Gd do** gives rise to half-metallicity for do** levels as high as 3.2 %. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 7 pages, 11 figures

Journal ref: Phys. Rev. B 92, 045202 (2015)

Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. P. Petrović, A. Paré, T. R. Paudel, K. Lee, S. Holmes, C. H. W. Barnes, A. David, T. Wu, E. Y. Tsymbal, C. Panagopoulos

Abstract: Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de… ▽ More Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk. △ Less

Submitted 20 June, 2014; originally announced June 2014.

Comments: Supplementary material available at Scientific Reports website

Journal ref: Scientific Reports 4, 5338 (2014)

The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface

Authors: A. P. Petrović, A. Paré, T. R. Paudel, K. Lee, S. Holmes, C. H. W. Barnes, A. David, T. Wu, E. Y. Tsymbal, C. Panagopoulos

Abstract: A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above t… ▽ More A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above the layer. We find no evidence for finite-momentum pairing or bulk magnetism and hence conclude that ferromagnetism is strictly confined to the interface, where it competes with superconductivity. △ Less

Submitted 10 November, 2013; originally announced November 2013.

Comments: 10 pages, including Supplementary Material

Journal ref: New J. Phys. 16 103012 (2014)

Spatially homogeneous ferromagnetism below the enhanced Curie temperature in EuO_{1-x} thin films

Authors: Pedro M. S. Monteiro, Peter J. Baker, Adrian Ionescu, Crispin H. W. Barnes, Zaher Salman, Andreas Suter, Thomas Prokscha, Sean Langridge

Abstract: We have used low energy implanted muons as a volume sensitive probe of the magnetic properties of EuO_{1-x} thin films. We find that static and homogeneous magnetic order persists up to the elevated T_C in the doped samples and the muon signal displays the double dome feature also observed in the sample magnetization. Our results appear incompatible with either the magnetic phase separation or bou… ▽ More We have used low energy implanted muons as a volume sensitive probe of the magnetic properties of EuO_{1-x} thin films. We find that static and homogeneous magnetic order persists up to the elevated T_C in the doped samples and the muon signal displays the double dome feature also observed in the sample magnetization. Our results appear incompatible with either the magnetic phase separation or bound magnetic polaron descriptions previously suggested to explain the elevated T_C, but are compatible with an RKKY-like interaction mediating magnetic interactions above 69 K. △ Less

Submitted 12 June, 2013; v1 submitted 6 May, 2013; originally announced May 2013.

Comments: 5 pages, 10 pages of supplementary information, 11 figures

Journal ref: Phys. Rev. Lett. 110, 217208 (2013)

Characterisation of Ferromagnetic Rings for Zernike Phase Plates using the Aharonov-Bohm effect

Authors: C. J. Edgcombe, A. Ionescu, J. C. Loudon, A. M. Blackburn, H. Kurebayashi, C. H. W. Barnes

Abstract: Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferroma… ▽ More Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferromagnetic material can provide the phase shift required for phase plates in transmission electron microscopy. When a ring of this type is used as a phase plate, scattered electrons will be intercepted over a radial range similar to the ring width. A cobalt ring of thickness 20 nm can produce a phase difference of pi/2 from a width of just under 30 nm, suggesting that the range of radial interception for this type of phase plate can be correspondingly small. △ Less

Submitted 15 June, 2012; originally announced June 2012.

Comments: 12 pages including 9 figures. This paper has been peer-reviewed and accepted for publication in Ultramicroscopy (http://www.journals.elsevier.com/ultramicroscopy/)

On-demand single-electron transfer between distant quantum dots

Authors: R. P. G. McNeil, M. Kataoka, C. J. B. Ford, C. H. W. Barnes, D. Anderson, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between… ▽ More Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices. △ Less

Submitted 19 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figures

Journal ref: Nature 477, 439-442 (22 September 2011)

Thickness-dependent magnetic properties of oxygen-deficient EuO

Authors: M. Barbagallo, T. Stollenwerk, J. Kroha, N. -J. Steinke, N. D. M. Hine, J. F. K. Cooper, C. H. W. Barnes, A. Ionescu, P. M. D. S. Monteiro, J. -Y. Kim, K. R. A. Ziebeck, C. J. Kinane, R. M. Dalgliesh, T. R. Charlton, S. Langridge

Abstract: We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that… ▽ More We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$. △ Less

Submitted 21 April, 2011; originally announced April 2011.

Comments: 4 pages, 3 figures, 1 table

Journal ref: Phys. Rev. B 84, 075219 (2011)

Magnetism in graphite oxide: The role of epoxy groups

Authors: D. W. Lee, J. M. Cole, J. W. Seo, S. S. Saxena, C. H. W. Barnes, E. E. M. Chia, C. Panagopoulos

Abstract: We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irrever… ▽ More We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups. △ Less

Submitted 22 February, 2011; v1 submitted 30 May, 2010; originally announced May 2010.

Comments: This paper has been withdrawn by the author due to an error in dealing with data

Transparent and flexible polymerized graphite oxide thin film with frequency-dependent dielectric constant

Authors: D. W. Lee, J. W. Seo, G. R. Jelbert, L. de Los Santos V., J. M. Cole, C. Panagopoulos, C. H. W. Barnes

Abstract: Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowin… ▽ More Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowing for smaller and simpler integrated electronic devices. We discuss this polarizability in terms of space charge effects. △ Less

Submitted 30 May, 2010; originally announced May 2010.

Journal ref: APPLIED PHYSICS LETTERS 95, 172901 ?2009?

Spin polarization control through resonant states in an Fe/GaAs Schottky barrier

Authors: S. Honda, H. Itoh, J. Inoue, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, A. Hirohata, J. A. C. Bland

Abstract: Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest… ▽ More Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photo-excited electrons, and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage. △ Less

Submitted 24 September, 2008; originally announced September 2008.

Comments: 5 pages, 4 figures

Energy-dependent tunnelling from few-electron dynamic quantum dots

Authors: M. R. Astley, M. Kataoka, C. J. B. Ford, C. H. W. Barnes, D. Anderson, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddl… ▽ More We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected. △ Less

Submitted 28 August, 2007; originally announced August 2007.

Comments: Accepted for publication in Physical Review Letters

Geometric Suppression of Single-Particle Energy Spacings in Quantum Antidots

Authors: L. C. Bassett, C. P. Michael, C. J. B. Ford, M. Kataoka, C. H. W. Barnes, M. Y. Simmons, D. A. Ritchie

Abstract: Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclea… ▽ More Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclear. We present a combination of experimental data and the results of new calculations concerning SP orbital states which show how the observed suppression of the energy spacing between states can be explained through a full consideration of the AD potential, without requiring any effects due to electron interactions such as the formation of compressible regions composed of multiple states, which may occur at higher magnetic fields. A full understanding of the regimes in which these effects occur is important for the design of devices to coherently manipulate electrons in edge states using AD resonances. △ Less

Submitted 9 July, 2007; originally announced July 2007.

Comments: 4 pages, 2 figures

Variation of the hop** exponent in disordered silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measuremen… ▽ More We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems. △ Less

Submitted 26 September, 2008; v1 submitted 29 May, 2007; originally announced May 2007.

Comments: 6 pages, 5 figures

Journal ref: J. Phys.: Condens. Matter 20, 415226 (2008)

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

Authors: J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields

Abstract: The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This typ… ▽ More The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography. △ Less

Submitted 28 January, 2007; originally announced January 2007.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 89, 243505 (2006)

A numerical investigation of a piezoelectric surface acoustic wave interaction with a one-dimensional channel

Authors: S. Rahman, M. Kataoka, C. H. W. Barnes, H. P. Langtangen

Abstract: We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. W… ▽ More We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of the underlying equations of motion, and is performed in three-dimensions fully incorporating the geometry and material composition of the substrate and gates. We demonstrate attenuation of the SAW amplitude as a result of the presence of both mechanical and electrical gates on the surface. We show that the incorporation of a simple model for the screening by the two-dimensional electron gas (2DEG), results in a total electric potential modulation that suggests a mechanism for the capture and release of electrons by the SAW. Our simulations suggest the absence of any significant turbulence in the SAW motion which could hamper the operation of SAW based quantum devices of a more complex geometry. △ Less

Submitted 7 May, 2006; v1 submitted 25 December, 2005; originally announced December 2005.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 74 (2006)

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

Authors: T. Ferrus, R. George, C. H. W. Barnes, M. Pepper

Abstract: We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room tempe… ▽ More We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface. △ Less

Submitted 11 October, 2010; v1 submitted 8 December, 2005; originally announced December 2005.

Comments: 3 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 14, 142108 (2010)

Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of… ▽ More Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band. △ Less

Submitted 11 October, 2007; v1 submitted 6 December, 2005; originally announced December 2005.

Comments: In press in Physica B

Journal ref: Physica B 400, 218 (2007)

Activation mechanisms in sodium-doped Silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper ba… ▽ More We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given. △ Less

Submitted 16 May, 2007; v1 submitted 2 December, 2005; originally announced December 2005.

Comments: published in J. Phys. : Condens. Matter

Journal ref: J. Phys.: Condens. Matter 19, 226216 (2007)

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

Authors: T. Ferrus, R. George, C. H. W. Barnes, N. Lumpkin, D. J. Paul, M. Pepper

Abstract: We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length… ▽ More We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature. △ Less

Submitted 13 April, 2006; v1 submitted 6 October, 2005; originally announced October 2005.

Comments: 4 pages; 5 figures; Published in PRB Rapid-Communications

Journal ref: Phys. Rev. B 73, 4, 041304 (2006)

Single-qubit gates and measurements in the surface acoustic wave quantum computer

Authors: S. Furuta, C. H. W. Barnes, C. J. L. Doran

Abstract: In the surface acoustic wave quantum computer, the spin state of an electron trapped in a moving quantum dot comprises the physical qubit of the scheme. Via detailed analytic and numerical modeling of the qubit dynamics, we discuss the effect of excitations into higher-energy orbital states of the quantum dot that occur when the qubits pass through magnetic fields. We describe how single-qubit q… ▽ More In the surface acoustic wave quantum computer, the spin state of an electron trapped in a moving quantum dot comprises the physical qubit of the scheme. Via detailed analytic and numerical modeling of the qubit dynamics, we discuss the effect of excitations into higher-energy orbital states of the quantum dot that occur when the qubits pass through magnetic fields. We describe how single-qubit quantum operations, such as single-qubit rotations and single-qubit measurements, can be performed using only localized static magnetic fields. The models provide useful parameter regimes to be explored experimentally when the requirements on semiconductor gate fabrication and the nanomagnetics technology are met in the future. △ Less

Submitted 7 June, 2004; originally announced June 2004.

Comments: 13 pages, 10 figures, submitted to Phys. Rev. B

Mesoscopic one-way channels for quantum state transfer via the Quantum Hall Effect

Authors: T. M. Stace, C. H. W. Barnes, G. J. Milburn

Abstract: We show that the one-way channel formalism of quantum optics has a physical realisation in electronic systems. In particular, we show that magnetic edge states form unidirectional quantum channels capable of coherently transporting electronic quantum information. Using the equivalence between one-way photonic channels and magnetic edge states, we adapt a proposal for quantum state transfer to me… ▽ More We show that the one-way channel formalism of quantum optics has a physical realisation in electronic systems. In particular, we show that magnetic edge states form unidirectional quantum channels capable of coherently transporting electronic quantum information. Using the equivalence between one-way photonic channels and magnetic edge states, we adapt a proposal for quantum state transfer to mesoscopic systems using edge states as a quantum channel, and show that it is feasible with reasonable experimental parameters. We discuss how this protocol may be used to transfer information encoded in number, charge or spin states of quantum dots, so it may prove useful for transferring quantum information between parts of a solid-state quantum computer. △ Less

Submitted 22 January, 2004; originally announced January 2004.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett., 93 126804 (2004)

An entangled two photon source using biexciton emission of an asymmetric quantum dot in a cavity

Authors: T. M. Stace, G. J. Milburn, C. H. W. Barnes

Abstract: A semiconductor based scheme has been proposed for generating entangled photon pairs from the radiative decay of an electrically-pumped biexciton in a quantum dot. Symmetric dots produce polarisation entanglement, but experimentally-realised asymmetric dots produce photons entangled in both polarisation and frequency. In this work, we investigate the possibility of erasing the `which-path' infor… ▽ More A semiconductor based scheme has been proposed for generating entangled photon pairs from the radiative decay of an electrically-pumped biexciton in a quantum dot. Symmetric dots produce polarisation entanglement, but experimentally-realised asymmetric dots produce photons entangled in both polarisation and frequency. In this work, we investigate the possibility of erasing the `which-path' information contained in the frequencies of the photons produced by asymmetric quantum dots to recover polarisation-entangled photons. We consider a biexciton with non-degenerate intermediate excitonic states in a leaky optical cavity with pairs of degenerate cavity modes close to the non-degenerate exciton transition frequencies. An open quantum system approach is used to compute the polarisation entanglement of the two-photon state after it escapes from the cavity, measured by the visibility of two-photon interference fringes. We explicitly relate the two-photon visibility to the degree of Bell-inequality violation, deriving a threshold at which Bell-inequality violations will be observed. Our results show that an ideal cavity will produce maximally polarisation-entangled photon pairs, and even a non-ideal cavity will produce partially entangled photon pairs capable of violating a Bell-inequality. △ Less

Submitted 29 November, 2002; originally announced November 2002.

Comments: 16 pages, 10 figures, submitted to PRB

Journal ref: PRB 67 085317, 2003

Quantum computation using electrons trapped by surface acoustic waves

Authors: C. H. W. Barnes, J. M. Shilton, A. M. Robinson

Abstract: We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW) based single-electron transport devices. These devices allow single electrons to be captured from a two-dimensional electron gas in the potential minima of a SA… ▽ More We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW) based single-electron transport devices. These devices allow single electrons to be captured from a two-dimensional electron gas in the potential minima of a SAW. We discuss how this technology can be adapted to allow the capture of electrons in pure spin states and how both single and two-qubit gates can be constructed using magnetic and non-magnetic gate technology. We give designs for readout gates to allow the spin state of the electrons to be measured and discuss how combinations of gates can be connected to make multi-qubit networks. Finally we consider decoherence and other sources of error, and how they can be minimized for our design. △ Less

Submitted 2 June, 2000; originally announced June 2000.

Spin-orbit coupling in interacting quasi-one-dimensional electron systems

Authors: A. V. Moroz, K. V. Samokhin, C. H. W. Barnes

Abstract: We present a new model for the study of spin-orbit coupling in interacting quasi-one-dimensional systems and solve it exactly to find the spectral properties of such systems. We show that the combination of spin-orbit coupling and electron-electron interactions results in: the replacement of separate spin and charge excitations with two new kinds of bosonic mixed-spin-charge excitation, and a ch… ▽ More We present a new model for the study of spin-orbit coupling in interacting quasi-one-dimensional systems and solve it exactly to find the spectral properties of such systems. We show that the combination of spin-orbit coupling and electron-electron interactions results in: the replacement of separate spin and charge excitations with two new kinds of bosonic mixed-spin-charge excitation, and a characteristic modification of the spectral function and single-particle density of states. Our results show how manipulation of the spin-orbit coupling, with external electric fields, can be used for the experimental determination of microscopic interaction parameters in quantum wires. △ Less

Submitted 13 March, 2000; originally announced March 2000.

Comments: 5 pages including 4 figures; RevTeX; to appear in Phys.Rev.Lett

The spin-orbit interaction as a source of new spectral and transport properties in quasi-one-dimensional systems

Authors: A. V. Moroz, C. H. W. Barnes

Abstract: We present an exact theoretical study of the effect of the spin-orbit (SO) interaction on the band structure and low temperature transport in long quasi-one-dimensional electron systems patterned in two-dimensional electron gases in zero and weak magnetic fields. We reveal the manifestations of the SO interaction which cannot in principle be observed in higher dimensional systems. We present an exact theoretical study of the effect of the spin-orbit (SO) interaction on the band structure and low temperature transport in long quasi-one-dimensional electron systems patterned in two-dimensional electron gases in zero and weak magnetic fields. We reveal the manifestations of the SO interaction which cannot in principle be observed in higher dimensional systems. △ Less

Submitted 13 December, 1999; originally announced December 1999.

Comments: 5 pages including 5 figures; RevTeX; to appear in Phys.Rev.B (Rapid Communications)

Effect of the spin-orbit interaction on the band structure and conductance of quasi-one-dimensional systems

Authors: A. V. Moroz, C. H. W. Barnes

Abstract: We discuss the effect of the spin-orbit interaction on the band structure, wave functions and low temperature conductance of long quasi-one-dimensional electron systems patterned in two-dimensional electron gases (2DEG). Our model for these systems consists of a linear (Rashba) potential confinement in the direction perpendicular to the 2DEG and a parabolic confinement transverse to the 2DEG. We… ▽ More We discuss the effect of the spin-orbit interaction on the band structure, wave functions and low temperature conductance of long quasi-one-dimensional electron systems patterned in two-dimensional electron gases (2DEG). Our model for these systems consists of a linear (Rashba) potential confinement in the direction perpendicular to the 2DEG and a parabolic confinement transverse to the 2DEG. We find that these two terms can significantly affect the band structure introducing a wave vector dependence to subband energies, producing additional subband minima and inducing anticrossings between subbands. We discuss the origin of these effects in the symmetries of the subband wave functions. △ Less

Submitted 27 October, 1999; originally announced October 1999.

Comments: 15 pages including 14 figures; RevTeX; to appear in Phys.Rev.B (15 Nov 1999)

Magnetotunneling as a Probe of Luttinger-Liquid Behavior

Authors: Alexander Altland, C. H. W. Barnes, F. W. J. Hekking, A. J. Schofield

Abstract: A novel method for detecting Luttinger-liquid behavior is proposed. The idea is to measure the tunneling conductance between a quantum wire and a parallel two-dimensional electron system as a function of both the potential difference between them, $V$, and an in-plane magnetic field, $B$. We show that the two-parameter dependence on $B$ and $V$ allows for a determination of the characteristic de… ▽ More A novel method for detecting Luttinger-liquid behavior is proposed. The idea is to measure the tunneling conductance between a quantum wire and a parallel two-dimensional electron system as a function of both the potential difference between them, $V$, and an in-plane magnetic field, $B$. We show that the two-parameter dependence on $B$ and $V$ allows for a determination of the characteristic dependence on wave vector $q$ and frequency $ω$ of the {\it spectral function}, $A_{\rm LL}(q,ω)$, of the quantum wire. In particular, the separation of spin and charge in the Luttinger liquid should manifest itself as singularities in the $I$-$V$-characteristic. The experimental feasibility of the proposal is discussed. △ Less

Submitted 29 July, 1999; originally announced July 1999.

Comments: Accepted for publication in Phys. Rev. Lett

Quantum Hall fluctuations and evidence for charging in the quantum Hall effect

Authors: David H. Cobden, C. H. W. Barnes, C. J. B. Ford

Abstract: We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling factor in the gate voltage-magnetic field plane. Also, a relationship appears between the fluctuations on quantum Hall transitions and those found at low densities… ▽ More We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling factor in the gate voltage-magnetic field plane. Also, a relationship appears between the fluctuations on quantum Hall transitions and those found at low densities in zero magnetic field. These phenomena are most naturally attributed to charging effects. We argue that they are the first unambiguous manifestation of interactions in dc transport in the integer quantum Hall effect. △ Less

Submitted 10 February, 1999; originally announced February 1999.

Comments: 4 pages RevTeX including 4 postscript bitmapped figures

An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

Authors: S. Gardelis, C. G Smith, C. H. W. Barnes, E. H. Linfield, D. A. Ritchie

Abstract: We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb… ▽ More We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts. △ Less

Submitted 3 February, 1999; originally announced February 1999.

Comments: 4 pages, 2 figures

Resonant transmission through an open quantum dot

Authors: C. -T. Liang, I. M. Castleton, J. E. F. Frost, C. H. W. Barnes, C. G. Smith, C. J. B. Ford, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant struc… ▽ More We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant structure deriving from tightly bound states is split by Coulomb charging at zero magnetic field. △ Less

Submitted 9 January, 1997; originally announced January 1997.

Comments: To be published in Phys. Rev. B (1997). 8 LaTex pages with 5 figures

Journal ref: Phys. Rev. B 55, 6723 (1997)

Theory of semi-ballistic wave propagation

Authors: A. Mosk, Th. M. Nieuwenhuizen, C. Barnes

Abstract: Wave propagation through waveguides, quantum wires or films with a modest amount of disorder is in the semi-ballistic regime when in the transversal direction(s) almost no scattering occurs, while in the long direction(s) there is so much scattering that the transport is diffusive. For such systems randomness is modelled by an inhomogeneous density of point-like scatterers. These are first consi… ▽ More Wave propagation through waveguides, quantum wires or films with a modest amount of disorder is in the semi-ballistic regime when in the transversal direction(s) almost no scattering occurs, while in the long direction(s) there is so much scattering that the transport is diffusive. For such systems randomness is modelled by an inhomogeneous density of point-like scatterers. These are first considered in the second order Born approximation and then beyond that approximation. In the latter case it is found that attractive point scatterers in a cavity always have geometric resonances, even for Schrödinger wave scattering. In the long sample limit the transport equation is solved analytically. Various geometries are considered: waveguides, films, and tunneling geometries such as Fabry-Pérot interferometers and double barrier quantum wells. The predictions are compared with new and existing numerical data and with experiment. The agreement is quite satisfactory. △ Less

Submitted 11 January, 1996; originally announced January 1996.

Comments: 24 pages Revtex; 10 figures

Journal ref: Phys. Rev. B 53, 15914 (1996)

Introducing Directionality to Anderson Localization: The Transport Properties of Quantum Railroads

Authors: C. Barnes, B. L Johnson, G. Kirczenow

Abstract: We present a study of the transport properties of a general class of quantum mechanical waveguides: Quantum Railroads (QRR). These waveguides are characterised by having a different number of adiabatic modes which carry current in one direction along the waveguide to the opposite direction; for example N forward modes and M reverse modes. Just as Anderson localization is a characteristic of the di… ▽ More We present a study of the transport properties of a general class of quantum mechanical waveguides: Quantum Railroads (QRR). These waveguides are characterised by having a different number of adiabatic modes which carry current in one direction along the waveguide to the opposite direction; for example N forward modes and M reverse modes. Just as Anderson localization is a characteristic of the disordered N=M case and the quantum Hall effect a characteristic of the M=0 case we find that a mixed effect, DIRECTED localization, is a characteristic of QRR's. We find that in any QRR there are always |N-M| perfectly transmitted effective adiabatic modes with the remainder being subject to multiple scattering and interference effects characteristic of the N=M case. △ Less

Submitted 31 January, 1995; originally announced January 1995.

Comments: revtex 3.0. See Can.J.Phys.72,559(1994) or contact [email protected] for figures.