Showing 1–41 of 41 results for author: Balocchi, A

Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers

Authors: D. Lagarde, M. Glazov, V. **dal, K. Mourzidis, Iann Gerber, A. Balocchi, L. Lombez, P. Renucci, T. Taniguchi, K. Watanabe, C. Robert, X. Marie

Abstract: In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is… ▽ More In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 10 pages, 4 figures

Brightened emission of dark trions in transition-metal dichalcogenide monolayers

Authors: V. **dal, K. Mourzidis, A. Balocchi, C. Robert, P. Li, D. Van Tuan, L. Lombez, D. Lagarde, P. Renucci, T. Taniguchi, K. Watanabe, H. Dery, X. Marie

Abstract: The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.… ▽ More The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 13 pages, 4 figures

Non-linear diffusion of negatively charged excitons in WSe2 monolayer

Authors: D. Beret, L. Ren, C. Robert, L. Foussat, P. Renucci, D. Lagarde, A. Balocchi, T. Amand, B. Urbaszek, K. Watanabe, T. Taniguchi, X. Marie, L. Lombez

Abstract: We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv… ▽ More We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Optical manipulation of the Rashba effect in germanium quantum wells

Authors: S. Rossi, E. Talamas Simola, M. Raimondo, M. Acciarri, J. Pedrini, A. Balocchi, X. Marie, G. Isella, F. Pezzoli

Abstract: The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. T… ▽ More The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin-orbit Hamiltonian through contactless optical excitation and opens the way towards the electro-optical manipulation of spins in quantum devices based on group-IV heterostructures. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Journal ref: Adv. Optical Mater. 2022, 2201082

Machine learning assisted GaAsN circular polarimeter

Authors: A. Aguirre-Perez, R. S. Joshya, H. Carrère, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish… ▽ More We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish the relationship between the input voltages, the intensity and degree of circular polarization. We have developed a particular neural network training strategy that substantially improves the accuracy of the device. The algorithm was trained and tested on theoretically generated photoconductivity and on photoluminescence experimental results. Even for a small training experimental dataset (70 instances), it is shown that the proposed algorithm correctly predicts linear, right and left circularly polarized light misclassifying less than $1.5\%$ of the cases and attains an accuracy larger than $97\%$ in the vast majority of the predictions ($92\%$) for intensity and degree of circular polarization. These numbers are significantly improved for the larger theoretically generated datasets (4851 instances). The algorithm is versatile enough that it can be easily adjusted to other device configurations where a map needs to be established between the input parameters and the device response. Training and testing data files as well as the algorithm are provided as supplementary material. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 20 pages, 13 figures

Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$

Authors: Lukas Sponfeldner, Nadine Leisgang, Shivangi Shree, Ioannis Paradisanos, Kenji Watanabe, Takashi Taniguchi, Cedric Robert, Delphine Lagarde, Andrea Balocchi, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek, Richard J. Warburton

Abstract: The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to… ▽ More The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Comments: Main text: 6 pages, 4 figures; Supplementary Information: 17 pages, 15 figures

Interlayer exciton mediated second harmonic generation in bilayer MoS2

Authors: Shivangi Shree, Delphine Lagarde, Laurent Lombez, Cedric Robert, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Iann C. Gerber, Mikhail M. Glazov, Leonid E. Golub, Bernhard Urbaszek, Ioannis Paradisanos

Abstract: Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of… ▽ More Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Comments: main paper and supplement

Journal ref: Nature Communications (2021) 12 : 6894

Chiral photodetector based on GaAsN

Authors: R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical ele… ▽ More The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds. △ Less

Submitted 22 March, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 7 pages, 7 figures

Polarization sensitive photodectector based on GaAsN

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its oper… ▽ More We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its operation hinges mainly on two phenomena: the spin dependent capture of electrons and the hyperfine interaction between bound electrons and nuclei on Ga$^{2+}$ paramagnetic centers in GaAsN. The first phenomenon confers the device with sensitivity to the degree of circular polarization and the latter allows to discriminate the handedness of the incident light. △ Less

Submitted 19 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 064040 (2021)

Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures

Authors: Elisa Vitiello, Simone Rossi, Christopher A. Broderick, Giorgio Gravina, Andrea Balocchi, Xavier Marie, Eoin P. O'Reilly, Maksym Myronov, Fabio Pezzoli

Abstract: We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dy… ▽ More We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a step** stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 14, 064068 (2020)

Mo Thio and Oxo-Thio Molecular Complexes Film as Self-Healing Catalyst for Photocatalytic Hydrogen Evolution on 2D Materials

Authors: Juliana Barros Barbosa, Pierre Louis Taberna, Valerie Bourdon, Iann C. Gerber, Romuald Poteau, Andrea Balocchi, Xavier Marie, Jerome Esvan, Pascal Puech, Antoine Barnabé, Lucianna Da Gama Fernandes Vieira, Ionut-Tudor Moraru, Jean Yves Chane-Ching

Abstract: 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-… ▽ More 2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides develo** high electro-catalytic activity, the Mo complexe films were shown to display ability to heal surface defects. We propose that the observed healing of surface defects arises from the strong adsorption on point defects of the 2D WSe2 substrate of Mo complexes such as (MoS4)2-, (MoOS3)2-, (Mo2S6O2)2- as shown from DFT calculations. In addition to display catalytic and healing effects, the thio-, oxo-thio Mo complexes films were shown to enhance charge carrier separation and migration for the hydrogen evolution reaction, thus representing an example of multicomponent passivation layer exhibiting multiple properties. △ Less

Submitted 13 March, 2020; originally announced March 2020.

Giant Stark splitting of an exciton in bilayer MoS$_2$

Authors: Nadine Leisgang, Shivangi Shree, Ioannis Paradisanos, Lukas Sponfeldner, Cedric Robert, Delphine Lagarde, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Richard J. Warburton, Iann C. Gerber, Bernhard Urbaszek

Abstract: Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie… ▽ More Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons. △ Less

Submitted 18 June, 2021; v1 submitted 6 February, 2020; originally announced February 2020.

Comments: final author version

Journal ref: Nature Nanotechnology 15, 901 (2020)

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Authors: J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to m… ▽ More Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 101, 075201 (2020)

Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature

Authors: Iann C. Gerber, Emmanuel Courtade, Shivangi Shree, Cedric Robert, Takashi Taniguchi, Kenji Watanabe, Andrea Balocchi, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek

Abstract: Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculat… ▽ More Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monolayer in the same structure in this energy range. The interlayer excitons consist of an electron localized in one layer and a hole state delocalized over the bilayer, which results in the unusual combination of high oscillator strength and a static dipole moment. We also find signatures of interlayer excitons involving the second highest valence band (B) and compare absorption calculations for different bilayer stackings. For homotrilayer MoS$_2$ we also observe interlayer excitons and an energy splitting between different intralayer A-excitons originating from the middle and outer layers, respectively. △ Less

Submitted 6 February, 2019; v1 submitted 15 November, 2018; originally announced November 2018.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 99, 035443 (2019)

Exciton-phonon coupling in MoSe2 monolayers

Authors: S. Shree, M. Semina, C. Robert, B. Han, T. Amand, A. Balocchi, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek

Abstract: We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous… ▽ More We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcodenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments. △ Less

Submitted 17 April, 2018; originally announced April 2018.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 98, 035302 (2018)

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

Authors: F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S. H. Liang, M. Stoffel, X. Devaux, H. Jaffres, J. M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, P. Renucci

Abstract: The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi… ▽ More The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: initial version, final version to appear in ACS Nano Letters

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Authors: M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K. Sakoda, T. Mano, T. Amand, B. Urbaszek

Abstract: In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p… ▽ More In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments. △ Less

Submitted 27 March, 2018; v1 submitted 2 February, 2018; originally announced February 2018.

Comments: 5 pages, 2 figures

Journal ref: Appl. Phys. Lett. 112, 142103 (2018)

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

Authors: Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello, Pedram Jahandar, Emanuele Grilli, Thierry Amand, Xavier Marie, Maksym Myronov, Fabio Pezzoli

Abstract: Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifeti… ▽ More Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that approaches the ns regime at room temperature. Besides important insights into nonradiative recombination pathways, our findings disclose a rich spin physics in novel epitaxial structures directly grown on a conventional Si substrate. This introduces a viable route towards the synergic enrichment of the group IV semiconductor toolbox with advanced spintronics and photonic capabilities. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 99, 035202 (2019)

Electron-nuclear coherent spin oscillations probed by spin dependent recombination

Authors: S. Azaizia, H. Carrère, J. C. Sandoval-Santana, V. G. Ibarra-Sierra, V. K. Kalevich, E. L. Ivchenko, L. A. Bakaleinikov, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of… ▽ More We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of the conduction electron spin-dependent recombination to the defect site. The hyperfine constants and the relative abundance of the nuclei isotopes involved can be determined without the need of electron spin resonance technique and in the absence of any magnetic field. Information on the nuclear and electron spin relaxation dam** parameters can also be estimated from the oscillations dam** and the long delay behavior. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 97, 155201 (2018)

Electron-nuclear spin dynamics of Ga$^{2+}$ paramagnetic centers probed by spin dependent recombination: A master equation approach

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, S. Azaizia, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching… ▽ More Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching record spin polarizations (100\%). Furthermore, the recent observation of the amplification of the spin filtering effect under a Faraday configuration magnetic field has suggested that the hyperfine interaction that couples bound electrons and nuclei permits the optical manipulation of its nuclear spin polarization. Even though the mechanisms behind the nuclear spin polarization in gallium centers are fairly well understood, the origin of nuclear spin relaxation and the formation of an Overhauser-like magnetic field remain elusive. In this work we develop a model based on the master equation approach to describe the evolution of electronic and nuclear spin polarizations of gallium centers interacting with free electrons and holes. Our results are in good agreement with existing experimental observations. In regard to the nuclear spin relaxation, the roles of nuclear dipolar and quadrupolar interactions are discussed. Our findings show that, besides the hyperfine interaction, the spin relaxation mechanisms are key to understand the amplification of the spin filtering effect and the appearance of the Overhauser-like magnetic field. Based on our model's results we propose an experimental protocol based on time resolved spectroscopy. It consists of a pump-probe photoluminescence scheme that would allow the detection and the tracing of the electron-nucleus flip-flops through time resolved PL measurements. △ Less

Submitted 13 November, 2016; originally announced November 2016.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 95, 195204 (2017)

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers

Authors: C. Robert, D. Lagarde, F. Cadiz, G. Wang, B. Lassagne, T. Amand, A. Balocchi, P. Renucci, S. Tongay, B. Urbaszek, X. Marie

Abstract: We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar… ▽ More We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium. △ Less

Submitted 3 March, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 205423 (2016)

Optical orientation of electron spins and valence band spectroscopy in germanium

Authors: Fabio Pezzoli, Andrea Balocchi, Elisa Vitiello, Thierry Amand, Xavier Marie

Abstract: We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence excitation spectroscopy unfolding the interplay between do** and ultrafast electron transfer from the center of the Brillouin zone towards its edge. As a result, the direct-gap photoluminescence circular polarisation c… ▽ More We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence excitation spectroscopy unfolding the interplay between do** and ultrafast electron transfer from the center of the Brillouin zone towards its edge. As a result, the direct-gap photoluminescence circular polarisation can vary from 30% to -60% when the excitation laser energy increases. This study provides also simultaneous access to the resonant electronic Raman scattering due to inter-valence band excitations of spin-polarized holes, yielding a fast and versatile spectroscopic approach for the determination of the energy spectrum of holes in semiconducting materials. △ Less

Submitted 27 April, 2015; originally announced April 2015.

Exciton states in monolayer MoSe2: impact on interband transitions

Authors: G. Wang, I. C. Gerber, L. Bouet, D. Lagarde, A. Balocchi, M. Vidal, E. Palleau, T. Amand, X. Marie, B. Urbaszek

Abstract: We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second har… ▽ More We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second harmonic generation (SHG) spectroscopy we record an enhancement by more than 2 orders of magnitude of the SHG signal at resonances of the charged exciton and the 1s and 2p neutral A- and B-exciton. Our post-Density Functional Theory calculations show in the conduction band along the $K-Γ$ direction a local minimum that is energetically and in k-space close to the global minimum at the K-point. This has a potentially strong impact on the polarization and energy of the excitonic states that govern the interband transitions and marks an important difference to MoS2 and WSe2 monolayers. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 8 pages, 3 figures

Journal ref: 2D Materials, 2, 045005 (2015)

Exciton dynamics in WSe2 bilayers

Authors: G. Wang, X. Marie, L. Bouet, M. Vidal, A. Balocchi, T. Amand, D. Lagarde, B. Urbaszek

Abstract: We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the… ▽ More We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the K point of the Brillouin zone efficient optical orientation and alignment during the short emission time $τ_{D}$. The evolution of the direct exciton polarization and intensity as a function of excitation laser energy is monitored in PL excitation (PLE) experiments. △ Less

Submitted 30 September, 2014; originally announced September 2014.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 105, 182105 (2014)

Electron Spin Dephasing and Optical Pum** of Nuclear Spins in GaN

Authors: G. Wang, C. R. Zhu, B. L. Liu, H. Ye, A. Balocchi, T. Amand, B. Urbaszek, H. Yang, X. Marie

Abstract: We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the order of 1.5 ns as a result of the interaction with the fluctuating nuclear spins. It increases drastically when an external magnetic field as small as 10 mT is a… ▽ More We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the order of 1.5 ns as a result of the interaction with the fluctuating nuclear spins. It increases drastically when an external magnetic field as small as 10 mT is applied. We extract a dispersion of the nuclear hyperfine field δBn $\sim$ 4 mT, in agreement with calculations. We also demonstrate for the first time in GaN based systems the optical pum** of nuclear spin yielding the build-up of a significant nuclear polarization. △ Less

Submitted 21 July, 2014; originally announced July 2014.

Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers

Authors: G. Wang, X. Marie, I. Gerber, T. Amand, D. Lagarde, L. Bouet, M. Vidal, A. Balocchi, B. Urbaszek

Abstract: Monolayers (MLs) of MoS2 and WSe2 are 2D semiconductors with strong, direct optical transitions that are governed by tightly Coulomb bound eletron-hole pairs (excitons). The optoelectronic properties of these transition metal dichalcogenides are directly related to the inherent crystal inversion symmetry breaking. It allows for efficient second harmonic generation (SHG) and is at the origin of chi… ▽ More Monolayers (MLs) of MoS2 and WSe2 are 2D semiconductors with strong, direct optical transitions that are governed by tightly Coulomb bound eletron-hole pairs (excitons). The optoelectronic properties of these transition metal dichalcogenides are directly related to the inherent crystal inversion symmetry breaking. It allows for efficient second harmonic generation (SHG) and is at the origin of chiral optical selections rules, which enable efficient optical initialization of electrons in specific K-valleys in momentum space. Here we demonstrate how these unique non-linear and linear optical properties can be combined to efficiently prepare exciton valley coherence and polarization through resonant pum** of an excited exciton state. In particular a new approach to coherent alignment of excitons following two-photon excitation is demonstrated. We observe a clear deviation of the excited exciton spectrum from the standard Rydberg series via resonances in SHG spectroscopy and two- and one-photon absorption. The clear identification of the 2s and 2p exciton excited states combined with first principle calculations including strong anti-screening effects allows us to determine an exciton binding energy of the order of 600 meV in ML WSe2. △ Less

Submitted 31 March, 2014; originally announced April 2014.

Comments: 9 pages, 5 figures + Supplementary Information

Journal ref: Physical Review Letters 114, 097403 (2015)

Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2

Authors: G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, B. Urbaszek

Abstract: Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well separated neutral excitons (bound electron… ▽ More Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well separated neutral excitons (bound electron hole pairs) and charged excitons (trions) in photoluminescence. The neutral exciton photoluminescence intensity decay time is about 4ps, whereas the trion emission occurs over several tens of ps. The trion polarization dynamics shows a partial, fast initial decay within tens of ps before reaching a stable polarization of about 20%, for which a typical valley polarization decay time larger than 1ns can be inferred. This is a clear signature of stable, optically initialized valley polarization. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: 16 pages, 9 figures

Journal ref: Physical Review B 90, 075413 (2014)

Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells

Authors: G. Wang, A. Balocchi, A. V. Poshakinskiy, C. R. Zhu, S. A. Tarasenko, T. Amand, B. L. Liu, X. Marie

Abstract: We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba… ▽ More We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is the consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)- grown asymmetric quantum wells described by the point group Cs where the growth direction is not the principal axis of the spin-relaxation-rate tensor. △ Less

Submitted 6 December, 2013; originally announced December 2013.

Room temperature optical manipulation of nuclear spin polarization in GaAsN

Authors: C. Sandoval-Santana, A. Balocchi, T. Amand, J. C. Harmand, A. Kunold, X. Marie

Abstract: The effect of hyperfine interaction on the room-temperature defect-enabled spin filtering effect in GaNAs alloys is investigated both experimentally and theoretically through a master equation approach based on the hyperfine and Zeeman interaction between electron and nuclear spin of the spin filtering defect. We show that the nuclear spin polarization can be tuned through the optically induced sp… ▽ More The effect of hyperfine interaction on the room-temperature defect-enabled spin filtering effect in GaNAs alloys is investigated both experimentally and theoretically through a master equation approach based on the hyperfine and Zeeman interaction between electron and nuclear spin of the spin filtering defect. We show that the nuclear spin polarization can be tuned through the optically induced spin polarization of conduction band electrons. △ Less

Submitted 8 November, 2013; v1 submitted 4 October, 2013; originally announced October 2013.

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

Authors: C. T. Nguyen, A. Balocchi, D. Lagarde, T. T. Zhang, H. Carrère, S. Mazzucato, P. Barate, T. Amand, X. Marie

Abstract: We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of… ▽ More We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects. △ Less

Submitted 13 September, 2013; originally announced September 2013.

Journal ref: Appl. Phys. Lett. 103, 052403 (2013)

Spin noise spectroscopy of donor bound electrons in ZnO

Authors: H. Horn, A. Balocchi, X. Marie, A. Bakin, A. Waag, M. Oestreich, J. Hübner

Abstract: We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nucl… ▽ More We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring $^{67}$Zn isotope. We measure a typical spin dephasing time of 23 ns in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment. △ Less

Submitted 25 September, 2012; originally announced September 2012.

L-valley Electron Spin Dynamics in GaAs

Authors: T. Zhang, P. Barate, C. T. Nguyen, A. Balocchi, T. Amand, P. Renucci, H. Carrere, B. Urbaszek, X. Marie

Abstract: Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $Γ$ valley following an energy relaxation of several hundred… ▽ More Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $Γ$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photo-excitation experiments with time-resolved photoluminescence spectroscopy of $Γ$ valley spin-polarized photogenerated electrons allows us to deduce a typical L valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations. △ Less

Submitted 25 July, 2012; originally announced July 2012.

Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells

Authors: H. Q. Ye, G. Wang, B. L. Liu, Z. W. Shi, W. X. Wang, C. Fontaine, A. Balocchi, T. Amand, D. Lagarde, P. Renucci, X. Marie

Abstract: The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A… ▽ More The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices. △ Less

Submitted 14 May, 2012; v1 submitted 31 March, 2012; originally announced April 2012.

Comments: 11 pages, 5 figures

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

Authors: A. Balocchi, J. Renard, C. T. Nguyen, B. Gayral, T. Amand, H. Mariette, B. Daudin, G. Tourbot, X. Marie

Abstract: We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton… ▽ More We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates with no preferential crystallographic orientation. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: 13 pages, 5 figures

Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

Authors: A. Balocchi, Q. H. Duong, P. Renucci, B. Liu, C. Fontaine, T. Amand, D. Lagarde, X. Marie

Abstract: The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost van… ▽ More The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: 5 pages, 2 figures

Journal ref: Physical Review Letters 107, 136604 (2011)

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots

Authors: G. Sallen, B. Urbaszek, M. M. Glazov, E. L. Ivchenko, T. Kuroda, T. Mano, S. Kunz, M. Abbarchi, K. Sakoda, D. Lagarde, A. Balocchi, X. Marie, T. Amand

Abstract: In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interpl… ▽ More In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry. △ Less

Submitted 30 June, 2011; originally announced June 2011.

Comments: 5 pages, 3 figures

Journal ref: Physical Review Letters 107, 166604 (2011)

Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

Authors: A. Kunold, A. Balocchi, F. Zhao, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie

Abstract: A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non paramagnetic centers both under CW and pulsed optical excitation. Emphasis is given to the effect of the competition between paramagnetic centers and non param… ▽ More A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non paramagnetic centers both under CW and pulsed optical excitation. Emphasis is given to the effect of the competition between paramagnetic centers and non paramagnetic centers which allows us to reproduce the measured characteristics of the spin-dependent recombination power dependence. Particular attention is paid to the role of an external magnetic field in Voigt geometry. The photoconductivity exhibits a Hanle-type curve whereas the spin polarization of electrons shows two superimposed Lorentzian curves with different widths, respectively related to the recombination of free and trapped electrons. The model is capable of reproducing qualitatively and quantitatively the most important features of photoluminescence and photocurrent experiments and is helpful in providing insight on the various mechanisms involved in the electron spin polarization and filtering in GaAsN semiconductors. △ Less

Submitted 5 October, 2010; originally announced October 2010.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 83, 165202 (2011)

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Authors: F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie

Abstract: By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoc… ▽ More By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers. △ Less

Submitted 1 March, 2010; v1 submitted 24 July, 2009; originally announced July 2009.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 95, 241104 (2009)

Hole - Nuclear Spin Interaction in Quantum Dots

Authors: B. Eble, C. Testelin, P. Desfonds, F. Bernardot, A. Balocchi, T. Amand, A. Miard, A. Lemaitre, X. Marie, M. Chamarro

Abstract: We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close a… ▽ More We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close agreement with our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei. Finally we demonstrate that a small external magnetic field, typically 10 mT instead of 200 mT for the case of electrons, quenches the hyperfine hole spin dephasing. △ Less

Submitted 22 July, 2008; v1 submitted 7 July, 2008; originally announced July 2008.

Comments: 17 pages, 3 figures, submitted to Phys. Rev. Lett

Exciton and hole spin dynamics in ZnO

Authors: D. Lagarde, A. Balocchi, P. Renucci, H. Carrère, F. Zhao, T. Amand, X. Marie, Z. X. Mei, X. L. Du, Q. K. Xue

Abstract: The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and tempera… ▽ More The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons. △ Less

Submitted 15 April, 2008; originally announced April 2008.

Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots

Authors: D. Lagarde, A. Balocchi, H. Carrere, P. Renucci, T. Amand, X. Marie, S. Founta, H. Mariette

Abstract: The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with c… ▽ More The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with characteristic decay times longer than 10 ns. △ Less

Submitted 28 November, 2007; originally announced November 2007.