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Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt
Authors:
Christin Schmitt,
Luis Sanchez-Tejerina,
Mariia Filianina,
Felix Fuhrmann,
Hendrik Meer,
Rafael Ramos,
Francesco Maccherozzi,
Dirk Backes,
Eiji Saitoh,
Giovanni Finocchio,
Lorenzo Baldrati,
Mathias Kläui
Abstract:
The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical…
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The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $Δ= 98 \pm 10$ nm, demonstrating strong confinement.
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Submitted 5 September, 2022;
originally announced September 2022.
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Strain-induced Shape Anisotropy in Antiferromagnetic Structures
Authors:
Hendrik Meer,
Olena Gomonay,
Christin Schmitt,
Rafael Ramos,
Leo Schnitzspan,
Florian Kronast,
Mohamad-Assaad Mawass,
Sergio Valencia,
Eiji Saitoh,
Jairo Sinova,
Lorenzo Baldrati,
Mathias Kläui
Abstract:
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by…
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We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.
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Submitted 1 September, 2022; v1 submitted 5 May, 2022;
originally announced May 2022.
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Indirect optical manipulation of the antiferromagnetic order of insulating NiO by ultrafast interfacial energy transfer
Authors:
Stephan Wust,
Christopher Seibel,
Hendrik Meer,
Paul Herrgen,
Christin Schmitt,
Lorenzo Baldrati,
Rafael Ramos,
Takashi Kikkawa,
Eiji Saitoh,
Olena Gomonay,
Jairo Sinova,
Yuriy Mokrousov,
Hans Christian Schneider,
Mathias Kläui,
Baerbel Rethfeld,
Benjamin Stadtmüller,
Martin Aeschlimann
Abstract:
We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt…
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We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt layer into the NiO spin system. We propose that this energy transfer is mediated by a stochastic exchange scattering of hot Pt electrons at the Pt/NiO interface.
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Submitted 5 May, 2022;
originally announced May 2022.
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Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments
Authors:
F. Schreiber,
H. Meer,
C. Schmitt,
R. Ramos,
E. Saitoh,
L. Baldrati,
M. Kläui
Abstract:
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-ind…
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We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a non-magnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
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Submitted 5 January, 2022;
originally announced January 2022.
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Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO
Authors:
A. Barra,
A. Ross,
O. Gomonay,
L. Baldrati,
A. Chavez,
R. Lebrun,
J. D. Schneider,
P. Shirazi,
Q. Wang,
J. Sinova,
G. P. Carman,
M. Kläui
Abstract:
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in pol…
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As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.
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Submitted 24 March, 2021;
originally announced March 2021.
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Identifying the origin of the non-monotonic thickness dependence of spin-orbit torques and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagnetic insulator heterostructure
Authors:
Shilei Ding,
Lorenzo Baldrati,
Andrew Ross,
Zengyao Ren,
Rui Wu,
Sven Becker,
**bo Yang,
Gerhard Jakob,
Arne Brataas,
Mathias Kläui
Abstract:
Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (G…
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Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (GGG) / thulium iron garnet (TmIG) / platinum (Pt) heterostructures with varying TmIG and Pt thicknesses. We find that the non-monotonic SOT efficiency as a function of the magnetic layer thickness is not consistent with the 1/thickness dependence expected from a simple interfacial SOT mechanism. Moreover, considering the insulating nature of TmIG, our results cannot be explained by the SOT mechanism established for metallic magnets where the transverse charge spin current can inject and dephase in the magnetic layers. Rather we can explain this non-monotonic behavior by a model based on the interfacial spin mixing conductance that is affected by the thickness-dependent exchange splitting energy by determining the phase difference of the reflected spin-up and spin-down electrons at the TmIG / Pt interface. By studying the Pt thickness dependence, we find that the effective DMI for GGG / TmIG / Pt does not depend on the Pt thickness, which indicates that the GGG / TmIG interface is the source of the iDMI in this system. Our work demonstrates that SOT and DMI can originate from two different interfaces, which enables independent optimization of DMI and SOT for advanced chiral spintronics with low dam** magnetic insulators.
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Submitted 16 December, 2020;
originally announced December 2020.
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An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit
Authors:
Andrew Ross,
Romain Lebrun,
Lorenzo Baldrati,
Akashdeep Kamra,
Olena Gomonay,
Shilei Ding,
Felix Schreiber,
Dirk Backes,
Francesco Maccherozzi,
Daniel A. Grave,
Avner Rothschild,
Jairo Sinova,
Mathias Kläui
Abstract:
We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisot…
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We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic dam** of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.
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Submitted 19 November, 2020;
originally announced November 2020.
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Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance
Authors:
Sven Becker,
Andrew Ross,
Romain Lebrun,
Lorenzo Baldrati,
Shilei Ding,
Felix Schreiber,
Francesco Maccherozzi,
Dirk Backes,
Mathias Kläui,
Gerhard Jakob
Abstract:
TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a…
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TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.
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Submitted 16 October, 2020;
originally announced October 2020.
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Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
Authors:
Christin Schmitt,
Lorenzo Baldrati,
Luis Sanchez-Tejerina,
Felix Schreiber,
Andrew Ross,
Mariia Filianina,
Shilei Ding,
Felix Fuhrmann,
Rafael Ramos,
Francesco Maccherozzi,
Dirk Backes,
Mohamad A. Mawass,
Florian Kronast,
Sergio Valencia,
Eiji Saitoh,
Giovanni Finocchio,
Mathias Kläui
Abstract:
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes.…
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Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.
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Submitted 28 February, 2021; v1 submitted 19 August, 2020;
originally announced August 2020.
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Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism
Authors:
H. Meer,
F. Schreiber,
C. Schmitt,
R. Ramos,
E. Saitoh,
O. Gomonay,
J. Sinova,
L. Baldrati,
M. Kläui
Abstract:
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the cu…
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We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile non-contact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
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Submitted 12 August, 2020;
originally announced August 2020.
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Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films
Authors:
Felix Schreiber,
Lorenzo Baldrati,
Christin Schmitt,
Rafael Ramos,
Eiji Saitoh,
Romain Lebrun,
Mathias Kläui
Abstract:
We demonstrate stable and reversible current induced switching of large-area ($> 100\;μm^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we…
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We demonstrate stable and reversible current induced switching of large-area ($> 100\;μm^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.
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Submitted 29 April, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching
Authors:
Lorenzo Baldrati,
Christin Schmitt,
Olena Gomonay,
Romain Lebrun,
Rafael Ramos,
Eiji Saitoh,
Jairo Sinova,
Mathias Kläui
Abstract:
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate…
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We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The Néel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.
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Submitted 18 February, 2021; v1 submitted 12 March, 2020;
originally announced March 2020.
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Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
Authors:
Andrew Ross,
Romain Lebrun,
Camilo Ulloa,
Daniel A. Grave,
Asaf Kay,
Lorenzo Baldrati,
Florian Kronast,
Sergio Valencia,
Avner Rothschild,
Mathias Kläui
Abstract:
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse…
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Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.
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Submitted 15 July, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
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Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$
Authors:
T Hajiri,
L. Baldrati,
R. Lebrun,
M. Filianina,
A. Ross,
N. Tanahashi,
M. Kuroda,
W. L. Gan,
T. O. Menteş,
F. Genuzio,
A. Locatelli,
H Asano,
M. Kläui
Abstract:
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magne…
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We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that SMR of AFM and canting magnetization components cancel out. Below 50~K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin system of non-collinear AFM systems.
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Submitted 11 July, 2019;
originally announced July 2019.
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Propagation length of antiferromagnetic magnons governed by domain configurations
Authors:
Andrew Ross,
Romain Lebrun,
Olena Gomonay,
Daniel A. Grave,
Asaf Kay,
Lorenzo Baldrati,
Sven Becker,
Alireza Qaiumzadeh,
Camilo Ulloa,
Gerhard Jakob,
Florian Kronast,
Jairo Sinova,
Rembert Duine,
Arne Brataas,
Avner Rothschild,
Mathias Kläui
Abstract:
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin film…
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The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.
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Submitted 1 February, 2021; v1 submitted 5 July, 2019;
originally announced July 2019.
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Impact of electromagnetic fields and heat on spin transport signals in Y$_{3}$Fe$_{5}$O$_{12}$
Authors:
Joel Cramer,
Lorenzo Baldrati,
Andrew Ross,
Mehran Vafaee,
Romain Lebrun,
Mathias Kläui
Abstract:
Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a…
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Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configuration and the magnons within the Y$_{3}$Fe$_{5}$O$_{12}$ below. We show that these factors can create a non-local signal that shows similar features as compared to an electrically induced magnon flow. Furthermore, a modulation of the spin transport signal between the Pt wires is observed, which can be partly explained by thermally excited spin currents of different polarization. Our results indicate a potential way towards the manipulation of non-local magnon signals, which could be useful for magnon logic.
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Submitted 6 November, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe
Authors:
Romain Lebrun,
Andrew Ross,
Olena Gomonay,
Scott Bender,
Lorenzo Baldrati,
Florian Kronast,
Alireza Qaiumzadeh,
Jairo Sinova,
Arne Brataas,
Rembert Duine,
Mathias Kläui
Abstract:
We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet…
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We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic Néel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.
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Submitted 4 January, 2019;
originally announced January 2019.
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Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
Authors:
Lorenzo Baldrati,
Olena Gomonay,
Andrew Ross,
Mariia Filianina,
Romain Lebrun,
Rafael Ramos,
Cyril Leveille,
Felix Fuhrmann,
Thomas Forrest,
Francesco Maccherozzi,
Sergio Valencia,
Florian Kronast,
Eiji Saitoh,
Jairo Sinova,
Mathias Kläui
Abstract:
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching…
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We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
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Submitted 15 August, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Spin-dependent (inverse) spin Hall effect in Co$_{60}$Fe$_{20}$B$_{20}$
Authors:
Joel Cramer,
Andrew Ross,
Samridh Jaiswal,
Lorenzo Baldrati,
Romain Lebrun,
Mathias Kläui
Abstract:
In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a spin-dependent (inverse) spin Hall effect is found in the ferromagnetic alloy Co$_{60}$Fe$_{20}$B$_{20}$. In a nonlocal magnon transport experiment, Co$_{60}$Fe…
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In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a spin-dependent (inverse) spin Hall effect is found in the ferromagnetic alloy Co$_{60}$Fe$_{20}$B$_{20}$. In a nonlocal magnon transport experiment, Co$_{60}$Fe$_{20}$B$_{20}$ is used to both excite and detect magnonic spin currents flowing in the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. We find that the signal amplitude is significantly modulated by tuning the direction of the Co$_{60}$Fe$_{20}$B$_{20}$ magnetization. We design a sample structure that completely prevents direct magnonic coupling between the ferromagnets. Thus, we can identify unambiguously an intrinsic electronic origin of the observed effect.
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Submitted 8 January, 2019; v1 submitted 2 October, 2018;
originally announced October 2018.
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Electrically controlled long-distance spin transport through an antiferromagnetic insulator
Authors:
R. Lebrun,
A. Ross,
S. A. Bender,
A. Qaiumzadeh,
L. Baldrati,
J. Cramer,
A. Brataas,
R. A. Duine,
M. Kläui
Abstract:
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the long-distance transport of spin signals across ferromagnetic insulators. Antiferromagnetically ordered materials are however the most common class of magnetic mat…
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Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the long-distance transport of spin signals across ferromagnetic insulators. Antiferromagnetically ordered materials are however the most common class of magnetic materials with several crucial advantages over ferromagnetic systems. In contrast to the latter, antiferromagnets exhibit no net magnetic moment, which renders them stable and impervious to external fields. In addition, they can be operated at THz frequencies. While fundamentally their properties bode well for spin transport, previous indirect observations indicate that spin transmission through antiferromagnets is limited to short distances of a few nanometers. Here we demonstrate the long-distance, over tens of micrometers, propagation of spin currents through hematite (α-Fe2O3), the most common antiferromagnetic iron oxide, exploiting the spin Hall effect for spin injection. We control the spin current flow by the interfacial spin-bias and by tuning the antiferromagnetic resonance frequency with an external magnetic field. This simple antiferromagnetic insulator is shown to convey spin information parallel to the compensated moment (Néel order) over distances exceeding tens of micrometers. This newly-discovered mechanism transports spin as efficiently as the net magnetic moments in the best-suited complex ferromagnets. Our results pave the way to ultra-fast, low-power antiferromagnet-insulator-based spin-logic devices that operate at room temperature and in the absence of magnetic fields.
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Submitted 7 May, 2018;
originally announced May 2018.
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Spin transport in multilayer systems with fully epitaxial NiO thin films
Authors:
Lorenzo Baldrati,
Christoph Schneider,
Tomohiko Niizeki,
Rafael Ramos,
Joel Cramer,
Andrew Ross,
Eiji Saitoh,
Mathias Kläui
Abstract:
We report on the generation and transport of thermal spin currents in fully epitaxial γ-Fe$_2$O$_3$/NiO(001)/Pt and Fe$_3$O$_4$/NiO(001)/Pt trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite (γ-Fe$_2$O$_3$) and magnetite (Fe$_3$O$_4$) thin films by means of the spin Seebeck effect. The spin current propagates ac…
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We report on the generation and transport of thermal spin currents in fully epitaxial γ-Fe$_2$O$_3$/NiO(001)/Pt and Fe$_3$O$_4$/NiO(001)/Pt trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite (γ-Fe$_2$O$_3$) and magnetite (Fe$_3$O$_4$) thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer, before being detected in the Pt layer by the inverse spin Hall effect. The transport of the spin signal is studied as a function of the NiO thickness, temperature and ferrimagnetic material where the spin current is generated. In epitaxial NiO grown on maghemite, the spin Seebeck signal decays exponentially as a function of the NiO thickness, with a spin-diffusion length for thermally-generated magnons of λ$_{MSDL}$ = $1.6 \pm 0.2$ nm, largely independent on temperature. We see no enhancement of the spin current signal as previously reported for certain temperatures and thicknesses of the NiO. In epitaxial NiO grown on magnetite, the temperature-averaged spin diffusion length is λ$_{MSDL}$ = $3.8 \pm 0.3$ nm, and we observe an enhancement of the spin signal when the NiO thickness is 0.8 nm, demonstrating that the growth conditions dramatically affect the spin transport properties of the NiO even for full epitaxial growth. In contrast to theoretical predictions for coherent spin transport, we do not see vastly different spin diffusion lengths between epitaxial and polycrystalline NiO layers.
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Submitted 6 February, 2018;
originally announced February 2018.
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Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
Authors:
Lorenzo Baldrati,
Andrew Ross,
Tomohiko Niizeki,
Christoph Schneider,
Rafael Ramos,
Joel Cramer,
Olena Gomonay,
Mariia Filianina,
Tatiana Savchenko,
Daniel Heinze,
Armin Kleibert,
Eiji Saitoh,
Jairo Sinova,
Mathias Kläui
Abstract:
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthog…
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We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S- and T-domains in the NiO(001), stemming from the competition between the Zeeman energy and the elastic clam** effect of the non-magnetic MgO substrate. From the observed SMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface to be greater than $2\times10^{14}$ $Ω^{-1}$ $m^{-2}$. Our results demonstrate the possibility to electrically detect the Néel vector direction in stable NiO(001) thin films, for rotations in the xy- and xz- planes. Moreover, we show that a careful subtraction of the ordinary magnetoresistance contribution is crucial to correctly estimate the amplitude of the SMR.
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Submitted 24 June, 2021; v1 submitted 4 September, 2017;
originally announced September 2017.
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Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions
Authors:
Greta Radaelli,
Diego Gutiérrez,
Mengdi Qian,
Ignasi Fina,
Florencio Sánchez,
Lorenzo Baldrati,
Jakoba Heidler,
Cinthia Piamonteze,
Riccardo Bertacco,
Josep Fontcuberta
Abstract:
Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extrem…
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Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness.
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Submitted 2 December, 2016;
originally announced December 2016.
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Ferroelectricity and Rashba effect in GeTe
Authors:
C. Rinaldi,
D. Di Sante,
A. Giussani,
R. -N. Wang,
S. Bertoli,
M. Cantoni,
L. Baldrati,
I. Vobornik,
G. Panaccione,
R. Calarco,
S. Picozzi,
R. Bertacco
Abstract:
GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry b…
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GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization.
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Submitted 7 December, 2014;
originally announced December 2014.
