Showing 1–13 of 13 results for author: Balakrishnan, P P

Vertically Graded FeNi Alloys with Low Dam** and a Sizeable Spin-Orbit Torque

Authors: Rachel E. Maizel, Shuang Wu, Purnima P. Balakrishnan, Alexander J. Grutter, Christy J. Kinane, Andrew J. Caruana, Prabandha Nakarmi, Bhuwan Nepal, David A. Smith, Youngmin Lim, Julia L. Jones, Wyatt C. Thomas, **g Zhao, F. Marc Michel, Tim Mewes, Satoru Emori

Abstract: Energy-efficient spintronic devices require a large spin-orbit torque (SOT) and low dam** to excite magnetic precession. In conventional devices with heavy-metal/ferromagnet bilayers, reducing the ferromagnet thickness to $\sim$1 nm enhances the SOT but dramatically increases dam**. Here, we investigate an alternative approach based on a 10 nm thick single-layer ferromagnet to attain both low… ▽ More Energy-efficient spintronic devices require a large spin-orbit torque (SOT) and low dam** to excite magnetic precession. In conventional devices with heavy-metal/ferromagnet bilayers, reducing the ferromagnet thickness to $\sim$1 nm enhances the SOT but dramatically increases dam**. Here, we investigate an alternative approach based on a 10 nm thick single-layer ferromagnet to attain both low dam** and a sizable SOT. Instead of relying on a single interface, we continuously break the bulk inversion symmetry with a vertical compositional gradient of two ferromagnetic elements: Fe with low intrinsic dam** and Ni with sizable spin-orbit coupling. We find low effective dam** parameters of $α_\mathrm{eff} < 5\times10^{-3}$ in the FeNi alloy films, despite the steep compositional gradients. Moreover, we reveal a sizable anti-dam** SOT efficiency of $θ_\mathrm{AD} \approx 0.05$, even without an intentional compositional gradient. Through depth-resolved x-ray diffraction, we identify a lattice strain gradient as crucial symmetry breaking that underpins the SOT. Our findings provide fresh insights into dam** and SOTs in single-layer ferromagnets for power-efficient spintronic devices. △ Less

Submitted 14 June, 2024; originally announced June 2024.

Hydrogen is not necessary for superconductivity in topotactically reduced nickelates

Authors: Purnima P. Balakrishnan, Dan Ferenc Segedin, Lin Er Chow, P. Quarterman, Shin Muramoto, Mythili Surendran, Ranjan K. Patel, Harrison LaBollita, Grace A. Pan, Qi Song, Yang Zhang, Ismail El Baggari, Koushik Jagadish, Yu-Tsun Shao, Berit H. Goodge, Lena F. Kourkoutis, Srimanta Middey, Antia S. Botana, Jayakanth Ravichandran, A. Ariando, Julia A. Mundy, Alexander J. Grutter

Abstract: A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a to… ▽ More A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a topotactic reaction with a strongly reducing agent such as CaH$_2$. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La$_{1-x}$X$_x$NiO$_2$ / SrTiO$_3$ (X = Ca and Sr) and Nd$_6$Ni$_5$O$_{12}$ / NdGaO$_3$ films, along with non-superconducting NdNiO$_2$ / SrTiO$_3$ and (Nd,Sr)NiO$_2$ / SrTiO$_3$. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates. △ Less

Submitted 4 March, 2024; originally announced March 2024.

Comments: 23 pages, 21 figures (including supplemental information)

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

Authors: Wei Yuan, Zi-Jie Yan, Hemian Yi, Zihao Wang, Stephen Paolini, Yi-Fan Zhao, Ling-Jie Zhou, Annie G. Wang, Ke Wang, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Laurel E. Winter, John Singleton, Moses H. W. Chan, Cui-Zu Chang

Abstract: The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe.… ▽ More The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the interaction between superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures. △ Less

Submitted 14 February, 2024; originally announced February 2024.

Comments: 24 pages, 4 figures, comments are welcome

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Yi-Fan Zhao, Ying-Ting Chan, Jiaqi Cai, Ruobing Mei, Xianxin Wu, Zi-Jie Yan, Ling-Jie Zhou, Ruoxi Zhang, Zihao Wang, Stephen Paolini, Run Xiao, Ke Wang, Anthony R. Richardella, John Singleton, Laurel E. Winter, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Moses H. W. Chan, Nitin Samarth, Xiaodong Xu, Weida Wu , et al. (2 additional authors not shown)

Abstract: When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferr… ▽ More When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 14 pages, 4 figures. Accepted by Science. Comments are welcome

First-order phase transition vs. spin-state quantum-critical scenarios in strain-tuned epitaxial cobaltite thin films

Authors: J. E. Dewey, V. Chaturvedi, T. A. Webb, P. Sharma, W. M. Postiglione, P. Quarterman, P. P. Balakrishnan, B. J. Kirby, L. Figari, C. Korostynski, A. Jacobson, T. Birol, R. M. Fernandes, A. N. Pasupathy, C. Leighton

Abstract: Pr-containing perovskite cobaltites exhibit unusual valence transitions, coupled to coincident structural, spin-state, and metal-insulator transitions. Heteroepitaxial strain was recently used to control these phenomena in the model (Pr$_{1-y}$Y$_y$)$_{1-x}$Ca$_x$CoO$_{3-δ}$ system, stabilizing a nonmagnetic insulating phase under compression (with a room-temperature valence/spin-state/metal-insul… ▽ More Pr-containing perovskite cobaltites exhibit unusual valence transitions, coupled to coincident structural, spin-state, and metal-insulator transitions. Heteroepitaxial strain was recently used to control these phenomena in the model (Pr$_{1-y}$Y$_y$)$_{1-x}$Ca$_x$CoO$_{3-δ}$ system, stabilizing a nonmagnetic insulating phase under compression (with a room-temperature valence/spin-state/metal-insulator transition) and a ferromagnetic metallic phase under tension, thus exposing a potential spin-state quantum critical point. The latter has been proposed in cobaltites and can be probed in this system as a function of a disorder-free variable (strain). We study this here via thickness-dependent strain relaxation in compressive SrLaAlO$_4$(001)/(Pr$_{0.85}$Y$_{0.15}$)$_{0.70}$Ca$_{0.30}$CoO$_{3-δ}$ epitaxial thin films to quasi-continuously probe structural, electronic, and magnetic behaviors across the nonmagnetic-insulator/ferromagnetic-metal boundary. High-resolution X-ray diffraction, electronic transport, magnetometry, polarized neutron reflectometry, and temperature-dependent magnetic force microscopy provide a detailed picture, including abundant evidence of temperature- and strain-dependent phase coexistence. This indicates a first-order phase transition as opposed to spin-state quantum-critical behavior, which we discuss theoretically via a phenomenological Landau model for coupled spin-state and magnetic phase transitions. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Comments: main text + supplementary material

Nitrogen-Based Magneto-Ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures

Authors: Christopher J. Jensen, Alberto Quintana, Patrick Quarterman, Alexander J. Grutter, Purnima P. Balakrishnan, Huairuo Zhang, Albert V. Davydov, Xixiang Zhang, Kai Liu

Abstract: Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an a… ▽ More Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co$_{0.7}$Fe$_{0.3}$/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5% and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta cap** layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 28 pages, 4 figures; supporting information: 17 pages, 11 figures

Journal ref: ACS Nano, 17, 6745-6753 (2023)

Exchange-biased quantum anomalous Hall effect

Authors: Peng Zhang, Purnima P. Balakrishnan, Christopher Eckberg, Peng Deng, Tomohiro Nozaki, Sukong Chong, Patrick Quarterman, Megan E. Holtz, Brian B. Maranville, Lei Pan, Eve Emmanouilidou, Ni Ni, Masashi Sahashi, Alexander Grutter, Kang L. Wang

Abstract: The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,S… ▽ More The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics. △ Less

Submitted 7 May, 2022; originally announced May 2022.

Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide

Authors: Vipul Chaturvedi, Supriya Ghosh, Dominique Gautreau, William M. Postiglione, John E. Dewey, Patrick Quarterman, Purnima P. Balakrishnan, Brian J. Kirby, Hua Zhou, Huikai Cheng, Amanda Huon, Timothy Charlton, Michael R. Fitzsimmons, Caroline Korostynski, Andrew Jacobson, Lucca Figari, Javier Garcia Barriocanal, Turan Birol, K. Andre Mkhoyan, Chris Leighton

Abstract: Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transitio… ▽ More Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point. △ Less

Submitted 9 June, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Comments: 35 pages, 7 figures

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

Authors: Peng Chen, Qi Yao, Qiang Sun, Alexander J. Grutter, P. Quarterman, Purnima P. Balakrishnan, Christy J. Kinane, Andrew J. Caruana, Sean Langridge, Baoshan Cui, Lun Li, Yuchen Ji, Yong Zhang, Zhongkai Liu, ** Zou, Guoqiang Yu, Yumeng Yang, Xufeng Kou

Abstract: The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic i… ▽ More The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 20 pages, 5 figures

Magnetic field-induced non-trivial electronic topology in Fe3GeTe2

Authors: Juan Macy, Danilo Ratkovski, Purnima P. Balakrishnan, Mara Strungaru, Yu-Che Chiu, Aikaterini Flessa, Alex Moon, Wenkai Zheng, Ashley Weiland, Gregory T. McCandless, Julia Y. Chan, Govind S. Kumar, Michael Shatruk, Alexander J. Grutter, Julie A. Borchers, William D. Ratcliff, Eun Sang Choi, Elton J. G. Santos, Luis Balicas

Abstract: The anomalous Hall, Nernst and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ display several features upon cooling, like a reversal in the Nernst signal below $T = 50$ K pointing to a topological transition (TT) associated to the development of magnetic spin textures. Since the anomalous transport variables are related to the Berry curvature, a possible TT might imply deviations from the Wiedema… ▽ More The anomalous Hall, Nernst and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ display several features upon cooling, like a reversal in the Nernst signal below $T = 50$ K pointing to a topological transition (TT) associated to the development of magnetic spin textures. Since the anomalous transport variables are related to the Berry curvature, a possible TT might imply deviations from the Wiedemann-Franz (WF) law. However, the anomalous Hall and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ are found, within our experimental accuracy, to satisfy the WF law for magnetic-fields $μ_0H$ applied along its inter-layer direction. Surprisingly, large anomalous transport coefficients are also observed for $μ_0H$ applied along the planar \emph{a}-axis as well as along the gradient of the chemical potential, a configuration that should not lead to their observation due to the absence of Lorentz force. However, as $μ_0H$ $\|$ \emph{a}-axis is increased, magnetization and neutron scattering indicate just the progressive canting of the magnetic moments towards the planes followed by their saturation. These anomalous planar quantities are found to not scale with the component of the planar magnetization ($M_{\|}$), showing instead a sharp decrease beyond $\sim μ_0 H_{\|} = $ 4 T which is the field required to align the magnetic moments along $μ_0 H_{\|}$. We argue that locally chiral spin structures, such as skyrmions, and possibly skyrmion tubes, lead to a field dependent spin-chirality and hence to a novel type of topological anomalous transport. Locally chiral spin-structures are captured by our Monte-Carlo simulations incorporating small Dzyaloshinskii-Moriya and biquadratic exchange interactions. △ Less

Submitted 13 October, 2021; v1 submitted 17 June, 2021; originally announced June 2021.

Comments: 34 pages, 10 figures, submitted to Applied Physics Reviews

Journal ref: Applied Physics Reviews 8, 041401 (2021)

Emergent electric field control of phase transformation in oxide superlattices

Authors: Di Yi, Yujia Wang, Olaf M. J. van 't Erve, Liubin Xu, Hongtao Yuan, Michael J. Veit, Purnima P. Balakrishnan, Yongseong Choi, Alpha T. N'Diaye, Padraic Shafer, Elke Arenholz, Alexander Grutter, Haixuan Xu, Pu Yu, Berend T. Jonker, Yuri Suzuki

Abstract: Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (T… ▽ More Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltage-controlled functionality. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Nat Commun 11, 902 (2020)

Tuning Perpendicular Magnetic Anisotropy by Oxygen Octahedral Rotations in (La$_{1-x}$Sr$_{x}$MnO$_{3}$)/(SrIrO$_{3}$) Superlattices

Authors: Di Yi, Charles L. Flint, Purnima P. Balakrishnan, Krishnamurthy Mahalingam, Brittany Urwin, Arturas Vailionis, Alpha T. NDiaye, Padraic Shafer, Elke Arenholz, Yongseong Choi, Kevin H. Stone, JiunHaw Chu, Brandon M. Howe, Jian Liu, Ian R. Fisher, Yuri Suzuki

Abstract: Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by oxygen octahedral rotation. In superlattices comprised of La$_{1-x}$Sr$_{x}$MnO$_{3}$ and SrIrO$_{3}$, we find that all superlattices (0$\leq$x$\leq$1) exhibit fer… ▽ More Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by oxygen octahedral rotation. In superlattices comprised of La$_{1-x}$Sr$_{x}$MnO$_{3}$ and SrIrO$_{3}$, we find that all superlattices (0$\leq$x$\leq$1) exhibit ferromagnetism despite the fact that La$_{1-x}$Sr$_{x}$MnO$_{3}$ is antiferromagnetic for x$>$0.5. PMA as high as 4$\times$10$^6$ erg/cm$^3$ is observed by increasing x and attributed to a decrease of oxygen octahedral rotation at interfaces. We also demonstrate that oxygen octahedral deformation cannot explain the trend in PMA. These results reveal a new degree of freedom to control PMA, enabling discovery of emergent magnetic textures and topological phenomena. △ Less

Submitted 6 August, 2017; v1 submitted 11 July, 2017; originally announced July 2017.

Comments: 6 pages, 4 figures

Metallicity in Ultra-Thin Oxygen-Deficient SrTiO$_3$ Thin Films

Authors: Purnima P. Balakrishnan, Urusa S. Alaan, Matthew T. Gray, Yuri Suzuki

Abstract: We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier concentrations of up to 2$\times10^{22}$ cm$^{-3}$ and mobilities of up to 19,000 cm$^2$/V-s at 2 K. There exists a non-conducting layer in our SrTiO$_{3-δ}$ film… ▽ More We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier concentrations of up to 2$\times10^{22}$ cm$^{-3}$ and mobilities of up to 19,000 cm$^2$/V-s at 2 K. There exists a non-conducting layer in our SrTiO$_{3-δ}$ films that is larger in films with lower carrier concentrations. This non-conducting layer can be attributed to a surface depletion layer due to a Fermi level pinning potential. The depletion width, transport, and structural properties are not greatly affected by the insertion of a DyScO$_3$ buffer between the SrTiO$_3$ film and SrTiO$_3$ substrate. △ Less

Submitted 3 June, 2016; originally announced June 2016.

Comments: 5 pages, 4 figures