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Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators
Authors:
Lakhan Bainsla,
Yuya Sakuraba,
Avinash Kumar Chaurasiya,
Akash Kumar,
Keisuke Masuda,
Ahmad A. Awad,
Nilamani Behera,
Roman Khymyn,
Saroj Prasad Dash,
Johan Åkerman
Abstract:
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall…
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Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert dam** constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials.
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Submitted 19 April, 2024; v1 submitted 14 November, 2023;
originally announced November 2023.
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Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature
Authors:
Roselle Ngaloy,
Bing Zhao,
Soheil Ershadrad,
Rahul Gupta,
Masoumeh Davoudiniya,
Lakhan Bainsla,
Lars Sjöström,
Anamul M. Hoque,
Alexei Kalaboukhov,
Peter Svedlindh,
Biplab Sanyal,
Saroj P. Dash
Abstract:
Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with do** or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of…
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Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with do** or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies.
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Submitted 30 October, 2023;
originally announced October 2023.
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Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4
Authors:
Lakhan Bainsla,
Bing Zhao,
Anamul Md. Hoque,
Lars Sjöström,
Nilamani Behera,
Mahmoud Abdel-Hafiez,
Johan Åkerman,
Saroj P. Dash
Abstract:
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. C…
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Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane dam**-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane dam**-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.
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Submitted 10 October, 2023;
originally announced October 2023.
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Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature
Authors:
Bing Zhao,
Lakhan Bainsla,
Roselle Ngaloy,
Peter Svedlindh,
Saroj P. Dash
Abstract:
The discovery of van der Waals (vdW) materials exhibiting non-trivial and tunable magnetic interactions at room temperature can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realising magnetization dynamics for energy-efficient and non-volatile spintronic memo…
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The discovery of van der Waals (vdW) materials exhibiting non-trivial and tunable magnetic interactions at room temperature can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realising magnetization dynamics for energy-efficient and non-volatile spintronic memory and logic technologies. Recent developments in vdW magnets have revealed their potential to enable spin-orbit torque (SOT) induced magnetization dynamics. However, the deterministic and field-free SOT switching of vdW magnets at room temperature has been lacking, prohibiting their potential applications. Here, we demonstrate magnetic field-free and deterministic SOT switching of a vdW magnet (Co0.5Fe0.5)5GeTe2 (CFGT) at room temperature, capitalizing on its non-trivial intrinsic magnetic ordering. We discover a coexistence of ferromagnetic and antiferromagnetic orders in CFGT at room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism. The resulting canted perpendicular magnetization of CFGT introduces symmetry breaking, facilitating successful magnetic field-free magnetization switching in the CFGT/Pt heterostructure devices. Furthermore, the SOT-induced magnetization dynamics and their efficiency are evaluated using 2nd harmonic Hall measurements. This advancement opens new avenues for investigating tunable magnetic phenomena in vdW material heterostructures and realizing field-free SOT-based spintronic technologies.
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Submitted 25 August, 2023;
originally announced August 2023.
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Ultra-low current 10 nm spin Hall nano-oscillators
Authors:
Nilamani Behera,
Avinash Kumar Chaurasiya,
Victor H. González,
Artem Litvinenko,
Lakhan Bainsla,
Akash Kumar,
Ahmad A. Awad,
Himanshu Fulara,
Johan Åkerman
Abstract:
Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of…
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Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $μ$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays.
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Submitted 11 May, 2023;
originally announced May 2023.
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Element Do** Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal
Authors:
**ming Liu,
Yihong Fan,
Delin Zhang,
Onri J. Benally,
Lakhan Bainsla,
Thomas Peterson,
Jian-** Wang
Abstract:
Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was…
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Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic resonance (ST-FMR) technique. This ratio can further increase to 0.14 by inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease (Al do**) or increase (CoSi do**) the resistivity of PtSn4. The work proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with dopants.
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Submitted 2 February, 2022;
originally announced February 2022.
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Ultrathin ferrimagnetic GdFeCo films with very low dam**
Authors:
Lakhan Bainsla,
Akash Kumar,
Ahmad A. Awad,
Chunlei Wang,
Mohammad Zahedinejad,
Nilamani Behera,
Himanshu Fulara,
Roman Khymyn,
Afshin Houshang,
Jonas Weissenrieder,
J. Åkerman
Abstract:
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like spin-orbit-torque (SOT) behavior. However to use ferrimagnets in spintronic dev…
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Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like spin-orbit-torque (SOT) behavior. However to use ferrimagnets in spintronic devices their advantageous properties must be retained also in ultrathin films (t < 10 nm). In this study, ferrimagnetic Gdx(Fe87.5Co12.5)1-x thin films in the thickness range t = 2-20 nm were grown on high resistance Si(100) substrates and studied using broadband ferromagnetic resonance measurements at room temperature. By tuning their stoichiometry, a nearly compensated behavior is observed in 2 nm Gdx(Fe87.5Co12.5)1-x ultrathin films for the first time, with an effective magnetization of Meff = 0.02 T and a low effective Gilbert dam** constant of α = 0.0078, comparable to the lowest values reported so far in 30 nm films. These results show great promise for the development of ultrafast and energy efficient ferrimagnetic spintronic devices.
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Submitted 16 November, 2021;
originally announced November 2021.
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Energy-efficient W$_{\text{100-x}}$Ta$_{\text{x}}$/CoFeB/MgO spin Hall nano-oscillators
Authors:
Nilamani Behera,
Himanshu Fulara,
Lakhan Bainsla,
Akash Kumar,
Mohammad Zahedinejad,
Afshin Houshang,
Johan Åkerman
Abstract:
We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit to…
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We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34\% reduction in threshold auto-oscillation current density, which translates into a 64\% reduction in power consumption as compared to pure W-based SHNOs. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.
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Submitted 16 November, 2021;
originally announced November 2021.
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Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy
Authors:
Tomoki Tsuchiya,
Tufan Roy,
Kelvin Elphick,
Jun Okabayashi,
Lakhan Bainsla,
Tomohiro Ichinose,
Kazuya Suzuki,
Masahito Tsujikawa,
Masafumi Shirai,
Atsufumi Hirohata,
Shigemi Mizukami
Abstract:
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show tha…
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The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlap** with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.
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Submitted 10 May, 2019;
originally announced May 2019.
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Experimental and Theoretical Investigation on the Possible Half-metallic Behaviour of Equiatomic Quaternary Heusler Alloys: CoRuMnGe and CoRuVZ (Z = Al, Ga)
Authors:
Deepika Rani,
Lakhan Bainsla,
K. G. Suresh,
Aftab Alam
Abstract:
In this report, structural, electronic, magnetic and transport properties of quaternary Heusler alloys CoRuMnGe and CoRuVZ (Z = Al, Ga) are investigated. All the three alloys are found to crystallize in cubic structure. CoRuMnGe exhibits L2$_1$ structure whereas, the other two alloys have B2-type disorder. For CoRuMnGe and CoRuVGa, the experimental magnetic moments are in close agreement with the…
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In this report, structural, electronic, magnetic and transport properties of quaternary Heusler alloys CoRuMnGe and CoRuVZ (Z = Al, Ga) are investigated. All the three alloys are found to crystallize in cubic structure. CoRuMnGe exhibits L2$_1$ structure whereas, the other two alloys have B2-type disorder. For CoRuMnGe and CoRuVGa, the experimental magnetic moments are in close agreement with the theory as well as those predicted by the Slater-Pauling rule, while for CoRuVAl, a relatively large deviation is seen. The reduction in the moment in case of CoRuVAl possibly arises due to the anti-site disorder between Co and Ru sites as well as V and Al sites. Among these alloys, CoRuMnGe has the highest T$\mathrm{_C}$ of 560 K. Resistivity variation with temperature reflects the half-metallic nature in CoRuMnGe alloy. CoRuVAl shows metallic character in both paramagnetic and ferromagnetic states, whereas the temperature dependence of resistivity for CoRuVGa is quite unusual. In the last system, $ρ$ vs. T curve shows an anomaly in the form of a maximum and a region of negative temperature coefficient of resistivity (TCR) in the magnetically ordered state. The ab initio calculations predict nearly half-metallic ferromagnetic state with high spin polarization of 91, 89 and 93 \% for CoRuMnGe, CoRuVAl and CoRuVGa respectively. To investigate the electronic properties of the experimentally observed structure, the Co-Ru swap disordered structures of CoRuMnGe alloy are also simulated and it is found that the disordered structures retain half-metallic nature, high spin polarization with almost same magnetic moment as in the ideal structure. Nearly half-metallic character, high T$\mathrm{_C}$ and high spin polarization make CoRuMnGe alloy promising for room temperature spintronic applications.
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Submitted 2 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Spin Gapless Semiconducting Nature in Co-rich Co1+xFe1-xCrGa: Insight and Advancements
Authors:
Deepika Rani,
Enamullah,
Lakhan Bainsla,
K. G. Suresh,
Aftab Alam
Abstract:
In this report, we present structural, electronic, magnetic and transport properties of Co-rich spin gapless semiconductor CoFeCrGa using both theoretical and experimental techniques. The key advantage of Co-rich samples $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ is the high Curie temperature (T$\mathrm{_C}$) and magnetization, without compromising the SGS nature (up to x = 0.4), and hence our choice. The qu…
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In this report, we present structural, electronic, magnetic and transport properties of Co-rich spin gapless semiconductor CoFeCrGa using both theoretical and experimental techniques. The key advantage of Co-rich samples $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ is the high Curie temperature (T$\mathrm{_C}$) and magnetization, without compromising the SGS nature (up to x = 0.4), and hence our choice. The quaternary Heusler alloys $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ (x = 0.1 to 0.5) are found to crystallize in LiMgPdSn-type structure having space group $F\bar{4}3m$ (\# 216). The measured Curie temperature increases from 690 K (x = 0) to 870 K (x = 0.5). Observed magnetization values follow the Slater-Pauling rule. Measured electrical resistivity, in the temperature range of 5-350 K, suggests that the alloys retain the SGS behavior up to x = 0.4, beyond which it reflects metallic character. Unlike conventional semiconductors, the conductivity value ($\mathrm{σ_{xx}}$) at 300 K lies in the range of 2289 S $\mathrm{cm^{-1}}$ to 3294 S $\mathrm{cm^{-1}}$, which is close to that of other reported SGS materials. The anomalous Hall effect is comparatively low. The intrinsic contribution to the anomalous Hall conductivity increase with x, which can be correlated with the enhancement in chemical order. The anomalous Hall coefficient is found to increase from 38 S/cm for x = 0.1 to 43 S/cm for 0.3. Seebeck coefficients turn out to be vanishingly small below 300 K, another signature for being SGS. All the alloys (for different x) are found to be both chemically and thermally stable. Simulated magnetization agrees fairly with the experiment. As such Co-rich CoFeCrGa is a promising candidate for room temperature spintronic applications, with enhanced T$\mathrm{_C}$, magnetic properties and SGS nature.
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Submitted 30 November, 2018;
originally announced November 2018.
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Equiatomic quaternary Heusler alloys: a material perspective for spintronic applications
Authors:
Lakhan Bainsla,
K. G. Suresh
Abstract:
Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature and tunable electronic structure, HMF Heusler alloys have a…
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Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X2YZ (where X and Y are the transition metals and Z is a sp element) have the cubic structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms, a quaternary Heusler structure with different structural symmetry is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties.
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Submitted 10 August, 2016;
originally announced August 2016.
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Spin polarization studies in half-metallic Co2TiX (X = Ge and Sn) Heusler alloys
Authors:
Lakhan Bainsla,
K. G. Suresh
Abstract:
In this paper, we investigated the Co2TiX (X = Ge, Sn) Heusler alloys by structural, magnetic and spin polarization measurements to probe the half-metallic nature. Alloys are synthesized using the arc melting technique, and found to exist in L21 crystal structure with Fm-3m space group. Curie temperature (TC) is found to be 384 and 371 K for Co2TiGe and Co2TiSn respectively. The saturation magneti…
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In this paper, we investigated the Co2TiX (X = Ge, Sn) Heusler alloys by structural, magnetic and spin polarization measurements to probe the half-metallic nature. Alloys are synthesized using the arc melting technique, and found to exist in L21 crystal structure with Fm-3m space group. Curie temperature (TC) is found to be 384 and 371 K for Co2TiGe and Co2TiSn respectively. The saturation magnetization (MS) value of 1.8 and 2.0 Bohr magneton/f.u. are obtained at 5 K for for Co2TiGe and Co2TiSn respectively, compared to 2.0 Bohr magneton/f.u. calculated by Slater-Pauling rule. To obtain the spin polarization value, differential conductance curves are recorded at the ferromagnetic/superconducting point contact at 4.2 K. The current spin polarization (P) value of 0.63 and 0.64 are deduced for Co2TiGe and Co2TiSn respectively. Considering the high current spin polarization and TC, these materials appear to be promising for spintronic devices.
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Submitted 23 June, 2015;
originally announced June 2015.
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High spin polarization and large spin splitting in equiatomic quaternary CoFeCrAl Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
A. A. Coelho,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling…
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In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling rule. MS values are found to be independent of pressure, which is a prerequisite for half-metals. The ab-initio electronic structure calculations predict half-metallic nature for the alloy with a spin slitting energy of 0.31 eV. Importantly, this system shows a high current spin polarization value of 0.67 [with error of 0.02], as deduced from the point contact Andreev reflection (PCAR) measurements. Linear dependence of electrical resistivity with temperature indicates the possibility of reasonably high spin polarization at elevated temperatures (~150 K) as well. All these suggest that CoFeCrAl is a promising material for the spintronic devices.
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Submitted 22 January, 2015;
originally announced January 2015.
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A new spin gapless semiconductor: quaternary Heusler CoFeCrGa alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
M. Manivel Raja,
A. A. Coelho,
A. K. Nigam,
D. D. Johnson,
Aftab Alam,
K. G. Suresh
Abstract:
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by the first-principles, electronic-structure calcu…
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Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by the first-principles, electronic-structure calculations, we report the first experimental evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (L21) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (MS) obtained at 8 K agrees with the Slater-Pauling rule and the Curie temperature (TC) is found to exceed 400 K. Carrier concentration (up to 250 K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185 S/cm at 5 K. Considering the SGS properties and high TC, this material appears to be promising for spintronic applications.
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Submitted 18 March, 2015; v1 submitted 21 November, 2014;
originally announced November 2014.
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Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
M. Manivel Raja,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles…
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Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles band structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 Bohr's magneton/f.u.. and Curie temperature of 620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly temperature-independent carrier concentration and electrical conductivity is observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data has yielded the current spin polarization value of 0.64, which is found to be robust against the structural disorder. All these properties are quite promising for the spintronic applications such as spin injection and can bridge a gap between the contrasting behavior of half-metallic ferromagnets and semiconductors.
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Submitted 1 October, 2014;
originally announced October 2014.
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High spin polarization in CoFeMnGe quaternary Heusler alloy
Authors:
Lakhan Bainsla,
K. G. Suresh,
A. K. Nigam,
M. Manivel Raja,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
K. Hono
Abstract:
We report the structure, magnetic property and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to exist in the L21 structure with considerable amount of DO3 disorder. Thermal analysis result indicated the Curie temperature is about 711K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the…
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We report the structure, magnetic property and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to exist in the L21 structure with considerable amount of DO3 disorder. Thermal analysis result indicated the Curie temperature is about 711K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 {plus/minus}0.1 was deduced using point contact Andreev reflection (PCAR) measurements. Half-metallic trend in the resistivity has also been observed in the temperature range of 5 K to 300 K. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.
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Submitted 20 August, 2014; v1 submitted 11 August, 2014;
originally announced August 2014.
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Investigation of the quaternary Fe2-xCoxMnSi alloys by structural, magnetic, resistivity and spin polarization measurements
Authors:
Lakhan Bainsla,
K. G. Suresh,
M. Manivel Raja,
A. K. Nigam
Abstract:
Effects of the Co substitution have been observed on the structural, magnetic and magneto-transport properties of Fe2-xCoxMnSi alloy. Curie temperature (TC) and saturation magnetization (MS) of these alloys increased linearly with the Co substitution. Competitive magnetic interaction between ferromagnetic (FM) and anti-ferromagnetic (AFM) phases exists in Fe2-xCoxMnSi for x less than 0.2, AFM phas…
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Effects of the Co substitution have been observed on the structural, magnetic and magneto-transport properties of Fe2-xCoxMnSi alloy. Curie temperature (TC) and saturation magnetization (MS) of these alloys increased linearly with the Co substitution. Competitive magnetic interaction between ferromagnetic (FM) and anti-ferromagnetic (AFM) phases exists in Fe2-xCoxMnSi for x less than 0.2, AFM phase is completely disappears for x greater than or equal to 0.2. The value of Rhodes-Wohlfarth ratio pc/ps is greater than one for these alloys which is the characteristics of iterant magnetism present in the system. Mössbauer spectroscopic measurements have been done to investigate the atomic disorder and local magnetic moment for some x values. Resistivity measurements also confirm the stability of ferromagnetism with the concentration of Co and also show a sign of half metallicity. Resistivity shows semiconducting behaviour for x = 0.4 which is interesting in view of spin gapless semiconductors.
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Submitted 11 August, 2014; v1 submitted 13 June, 2013;
originally announced June 2013.
