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Stacking-dependent topological magnons in bilayer CrI$_3$
Authors:
M. Soenen,
C. Bacaksiz,
R. M. Menezes,
M. V. Milosevic
Abstract:
Motivated by the potential of atomically-thin magnets towards tunable high-frequency magnonics, we detail the spin-wave dispersion of bilayer CrI$_3$. We demonstrate that the magnonic behavior of the bilayer strongly depends on its stacking configuration and the interlayer magnetic ordering, where a topological bandgap opens in the dispersion caused by the Dzyaloshinskii-Moriya and Kitaev interact…
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Motivated by the potential of atomically-thin magnets towards tunable high-frequency magnonics, we detail the spin-wave dispersion of bilayer CrI$_3$. We demonstrate that the magnonic behavior of the bilayer strongly depends on its stacking configuration and the interlayer magnetic ordering, where a topological bandgap opens in the dispersion caused by the Dzyaloshinskii-Moriya and Kitaev interactions, classifying bilayer CrI$_3$ as a topological magnon insulator. We further reveal that both size and topology of the bandgap in a CrI$_3$ bilayer with an antiferromagnetic interlayer ordering are tunable by an external magnetic field.
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Submitted 30 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Tailoring High-Frequency Magnonics in Monolayer Chromium Trihalides
Authors:
Raí M. Menezes,
Denis Šabani,
Cihan Bacaksiz,
Clécio C. de Souza Silva,
Milorad V. Milošević
Abstract:
Monolayer chromium trihalides, the archetypal two dimensional (2D) magnetic materials, are readily suggested as a promising platform for high frequency magnonics. Here we detail the spin wave properties of monolayer CrBr$_3$ and CrI$_3$, using spin dynamics simulations parametrized from the first principles. We reveal that spin wave dispersion can be tuned in a broad range of frequencies by strain…
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Monolayer chromium trihalides, the archetypal two dimensional (2D) magnetic materials, are readily suggested as a promising platform for high frequency magnonics. Here we detail the spin wave properties of monolayer CrBr$_3$ and CrI$_3$, using spin dynamics simulations parametrized from the first principles. We reveal that spin wave dispersion can be tuned in a broad range of frequencies by strain, paving the way towards flexo magnonic applications. We further show that ever present halide vacancies in these monolayers host sufficiently strong Dzyaloshinskii Moriya interaction to scatter spin waves, which promotes design of spin-wave guides by defect engineering. Finally we discuss the spectra of spin-waves propagating across a moiré periodic modulation of magnetic parameters in a van der Waals heterobilayer, and show that the nanoscale moiré periodicities in such samples are ideal for realization of a magnonic crystal in the terahertz frequency range. Recalling the additional tunability of magnetic 2D materials by electronic gating, our results situate these systems among the front-runners for prospective high frequency magnonic applications.
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Submitted 28 November, 2021;
originally announced November 2021.
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Ion exchange in atomically thin clays and micas
Authors:
Yi-Chao Zou,
Lucas Mogg,
Nick Clark,
Cihan Bacaksiz,
Slavisa Milanovic,
Vishnu Sreepal,
Guang-** Hao,
Yi-Chi Wang,
David G. Hopkinson,
Roman Gorbachev,
Samuel Shaw,
Kostya S. Novoselov,
Rahul Raveendran-Nair,
Francois M. Peeters,
Marcelo Lozada-Hidalgo,
Sarah J. Haigh
Abstract:
Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomical…
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Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomically thin materials. Here we use atomic-resolution scanning transmission electron microscopy to study the dynamics of the process and reveal the binding sites of individual ions in atomically thin and artificially restacked clays and micas. Imaging ion exchange after different exposure time and for different crystal thicknesses, we find that the ion diffusion constant, D, for the interlayer space of atomically thin samples is up to 10^4 times larger than in bulk crystals and approaches its value in free water. Surprisingly, samples where no bulk exchange is expected display fast exchange if the mica layers are twisted and restacked; but in this case, the exchanged ions arrange in islands controlled by the moiré superlattice dimensions. We attribute the fast ion diffusion to enhanced interlayer expandability resulting from weaker interlayer binding forces in both atomically thin and restacked materials. Finally, we demonstrate images of individual surface cations for these materials, which had remained elusive in previous studies. This work provides atomic scale insights into ion diffusion in highly confined spaces and suggests strategies to design novel exfoliated clays membranes.
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Submitted 14 July, 2021;
originally announced July 2021.
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Distinctive magnetic properties of CrI3 and CrBr3 monolayers caused by spin-orbit coupling
Authors:
C. Bacaksiz,
D. Šabani,
R. M. Menezes,
M. V. Milošević
Abstract:
After the discovery of magnetism in monolayer CrI3, the magnetic properties of different 2D materials from the chromium-trihalide family are intuitively assumed to be similar, yielding magnetic anisotropy from the spin-orbit coupling on halide ligands. Here we reveal significant differences between the CrI3 and CrBr3 magnetic monolayers in their magnetic anisotropy, resulting Curie temperature, hy…
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After the discovery of magnetism in monolayer CrI3, the magnetic properties of different 2D materials from the chromium-trihalide family are intuitively assumed to be similar, yielding magnetic anisotropy from the spin-orbit coupling on halide ligands. Here we reveal significant differences between the CrI3 and CrBr3 magnetic monolayers in their magnetic anisotropy, resulting Curie temperature, hysteresis in external magnetic field, and evolution of magnetism with strain, all predominantly attributed to distinctly different interplay of atomic contributions to spin-orbit coupling in two materials.
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Submitted 26 February, 2021;
originally announced February 2021.
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Releasing latent chirality in magnetic two-dimensional materials
Authors:
Denis Sabani,
Cihan Bacaksiz,
Milorad V. Milosevic
Abstract:
Dzyaloshinskii-Moriya interaction is at heart of chiral magnetism and causes emergence of rich non-collinear and unique topological spin textures in magnetic materials, including cycloids, helices, skyrmions and other. Here we show that strong intrinsic DMI lives in recently discovered van der Waals magnetic two-dimensional materials, due to the sizeable spin-orbit coupling on the non-magnetic ion…
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Dzyaloshinskii-Moriya interaction is at heart of chiral magnetism and causes emergence of rich non-collinear and unique topological spin textures in magnetic materials, including cycloids, helices, skyrmions and other. Here we show that strong intrinsic DMI lives in recently discovered van der Waals magnetic two-dimensional materials, due to the sizeable spin-orbit coupling on the non-magnetic ions. In a perfect crystal, this intrinsic DMI remains hidden, but is released with any break of point-inversion symmetry between magnetic ions, unavoidable at the sample edges, at ever present structural defects, with any buckling of the material, or with non-uniform strain on an uneven substrate. We demonstrate such release of latent chirality on an archetypal magnetic monolayer - CrI3, and discuss the plethora of realizable DMI patterns, their control by nanoengineering and tuning by external electric field, thereby opening novel routes in 2D magnetoelectronics.
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Submitted 7 September, 2020;
originally announced September 2020.
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2D ferromagnetism at finite temperatures under quantum scrutiny
Authors:
Joren Vanherck,
Cihan Bacaksiz,
Bart Sorée,
Milorad V. Milošević,
Wim Magnus
Abstract:
Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which verified experimentally. However, most of the theoretical predictions to date rely on ab-initio methods, at zero temperature and fluctuations-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here we present the solution of the quantum Heisenberg model for…
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Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which verified experimentally. However, most of the theoretical predictions to date rely on ab-initio methods, at zero temperature and fluctuations-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here we present the solution of the quantum Heisenberg model for honeycomb/hexagonal lattices with anisotropic exchange interaction up to third nearest neighbors and in an applied field in arbitrary direction, that answers the question whether long-range magnetization can indeed survive in the ultrathin limit of materials, up to which temperature, and what the characteristic excitation (magnon) frequencies are, all essential to envisaged applications of magnetic 2D materials. We find that long-range magnetic order persists at finite temperature for materials with overall easy-axis anisotropy. We validate the calculations on the examples of monolayer CrI3, CrBr3 and MnSe2. Moreover, we provide an easy-to-use tool to calculate Curie temperatures of new 2D computational materials.
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Submitted 10 August, 2020; v1 submitted 5 June, 2020;
originally announced June 2020.
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Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects
Authors:
Eoin Griffin,
Lucas Mogg,
Guang-** Hao,
Gopinadhan Kalon,
Cihan Bacaksiz,
Guillermo Lopez-Polin,
T. Y. Zhou,
Victor Guarochico,
Junhao Cai,
Christof Neumann,
Andreas Winter,
Michael Mohn,
Jong Hak Lee,
Junhao Lin,
Ute Kaiser,
Irina V. Grigorieva,
Kazu Suenaga,
Barbaros Ozyilmaz,
Hui-Min Cheng,
Wencai Ren,
Andrey Turchanin,
Francois M. Peeters,
Andre K. Geim,
Marcelo Lozada-Hidalgo
Abstract:
Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experi…
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Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.
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Submitted 20 May, 2020; v1 submitted 19 May, 2020;
originally announced May 2020.
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Hematite at its thinnest limit
Authors:
C. Bacaksiz,
M. Yagmurcukardes,
F. M. Peeters,
M. V. Milošević
Abstract:
Motivated by the recent synthesis of two-dimensional $α$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $α$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $α$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures,…
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Motivated by the recent synthesis of two-dimensional $α$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $α$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $α$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures, and how they all differ from bulk through observable Raman spectra. The optical spectra exhibit gradual shift of the prominent peak to higher energy, as well as additional features at lower energy when $α$-Fe$_2$O$_3$ is thinned down to a monolayer. Both optical and electronic properties have strong spin asymmetry, meaning that lower-energy optical and electronic activities are allowed for the single-spin state. Finally, our considerations of magnetic properties reveal that 2D hematite has anti-ferromagnetic ground state for all thicknesses, but the critical temperature for Morin transition increases with decreasing sample thickness. On all accounts, the link to available experimental data is made, and further measurements are prompted.
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Submitted 26 February, 2020;
originally announced February 2020.
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Ab initio methodology for magnetic exchange parameters: \\Generic four-state energy map** on Heisenberg spin Hamiltonian
Authors:
Denis Sabani,
Cihan Bacaksiz,
Milorad Milosevic
Abstract:
The recent development in the field of 2D magnetic materials urges reliable theoretical methodology for determination of magnetic properties. Among the available methods, ab initio four-state energy map** based on Density Functional Theory stands out as a powerful technique to calculate the magnetic exchange interaction in the Heisenberg spin model. Although the required formulae were explained…
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The recent development in the field of 2D magnetic materials urges reliable theoretical methodology for determination of magnetic properties. Among the available methods, ab initio four-state energy map** based on Density Functional Theory stands out as a powerful technique to calculate the magnetic exchange interaction in the Heisenberg spin model. Although the required formulae were explained in earlier works, the considered Hamiltonian in those studies always corresponded to the specific case that J-matrix is anti-symmetric, which may be misleading in other cases. Therefore, using the most general form of the Heisenberg spin Hamiltonian, we here derive the generic formulae. With a proper choice of four different magnetic states, a single formula governs all elements of the exchange interaction matrix for any considered pair of spin sites.
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Submitted 25 February, 2020;
originally announced February 2020.
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Atomically-thin micas as proton conducting membranes
Authors:
L. Mogg,
G. -P. Hao,
S. Zhang,
C. Bacaksiz,
Y. Zou,
S. J. Haigh,
F. M. Peeters,
A. K. Geim,
M. Lozada-Hidalgo
Abstract:
Monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal protons. For thicker two-dimensional (2D) materials, proton conductivity diminishes exponentially so that, for example, monolayer MoS2 that is just three atoms thick is completely impermeable to protons. This seemed to suggest that only one-atom-thick crystals could be used as proton conducting membranes. Here…
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Monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal protons. For thicker two-dimensional (2D) materials, proton conductivity diminishes exponentially so that, for example, monolayer MoS2 that is just three atoms thick is completely impermeable to protons. This seemed to suggest that only one-atom-thick crystals could be used as proton conducting membranes. Here we show that few-layer micas that are rather thick on the atomic scale become excellent proton conductors if native cations are ion-exchanged for protons. Their areal conductivity exceeds that of graphene and hBN by one-two orders of magnitude. Importantly, ion-exchanged 2D micas exhibit this high conductivity inside the infamous gap for proton-conducting materials, which extends from 100 C to 500 C. Areal conductivity of proton-exchanged monolayer micas can reach above 100 S cm-2 at 500 C, well above the current requirements for the industry roadmap. We attribute the fast proton permeation to 5 A-wide tubular channels that perforate micas' crystal structure which, after ion exchange, contain only hydroxyl groups inside. Our work indicates that there could be other 2D crystals with similar nm-scale channels, which could help close the materials gap in proton-conducting applications.
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Submitted 11 June, 2019;
originally announced June 2019.
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Strain Map** In Single-Layer 2D Crystals Via Raman Activity
Authors:
M. Yagmurcukardes,
C. Bacaksiz,
E. Unsal,
B. Akbali,
R. T. Senger,
H. Sahin
Abstract:
By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman…
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By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman active modes of the crystals under in-plane biaxial strain. The results are summarized as follows; (i) frequencies of the phonon modes soften (harden) under applied tensile (compressive) strains, (ii) the response of the Raman activities to applied strain for the in-plane and out-of-plane vibrational modes have opposite trends, thus, the built-in strains in the materials can be monitored by tracking the relative activities of those modes, (iii) in particular, the A-peak in single-layer Si and Ge disappear under a critical tensile strain, (iv) especially in mono and di- atomic single-layers, the shift of the peak frequencies is stronger indication of the strain rather than the change in Raman activities, (v) Raman active modes of single-layer ReX 2 (X=S, Se) are almost irresponsive to the applied strain. Strain-induced modifications in the Raman spectrum of 2D materials in terms of the peak positions and the relative Raman activities of the modes could be a convenient tool for characterization.
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Submitted 3 March, 2018;
originally announced March 2018.
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$h$-AlN-Mg(OH)$_{2}$ vdW Bilayer Heterostructure: Tuning the excitonic characteristics
Authors:
C. Bacaksiz,
A. Dominguez,
A. Rubio,
R. T. Senger,
H. Sahin
Abstract:
Motivated by recent studies that reported the successful synthesis of monolayer Mg(OH)$_{2}$ [Suslu \textit{et al.}, Sci. Rep. \textbf{6}, 20525 (2016)] and hexagonal (\textit{h}-)AlN [Tsipas \textit{et al}., Appl. Phys. Lett. \textbf{103}, 251605 (2013)], we investigate structural, electronic, and optical properties of vertically stacked $h$-AlN and Mg(OH)$_{2}$, through \textit{ab initio} densit…
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Motivated by recent studies that reported the successful synthesis of monolayer Mg(OH)$_{2}$ [Suslu \textit{et al.}, Sci. Rep. \textbf{6}, 20525 (2016)] and hexagonal (\textit{h}-)AlN [Tsipas \textit{et al}., Appl. Phys. Lett. \textbf{103}, 251605 (2013)], we investigate structural, electronic, and optical properties of vertically stacked $h$-AlN and Mg(OH)$_{2}$, through \textit{ab initio} density-functional theory (DFT), many-body quasi-particle calculations within the GW approximation, and the Bethe-Salpeter equation (BSE). It is obtained that the bilayer heterostructure prefers the $AB^{\prime}$ stacking having direct band gap at the $Γ$ with Type-II band alignment in which the valance band maximum and conduction band minimum originate from different layer. Regarding the optical properties, the imaginary part of the dielectric function of the individual layers and hetero-bilayer are investigated. The hetero-bilayer possesses excitonic peaks which appear only after the construction of the hetero-bilayer. The lowest three exciton peaks are detailedly analyzed by means of band decomposed charge density and the oscillator strength. Furthermore, the wave function calculation shows that the first peak of the hetero-bilayer originates from spatially indirect exciton where the electron and hole localized at $h$-AlN and Mg(OH)$_{2}$, respectively, which is important for the light harvesting applications.
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Submitted 3 February, 2017;
originally announced February 2017.
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Electronic, Optical and Mechanical Properties of Silicene Derivatives
Authors:
Mehmet Yagmurcukardes,
Cihan Bacaksiz,
Fadıl Iyikanat,
Engin Torun,
R. Tugrul Senger,
Francois M. Peeters,
Hasan Sahin
Abstract:
Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged a…
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Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged as a promising material for nanoscale device applications. However, the major obstacle for using silicene in electronic applications is the lack of a band gap similar to the case of graphene. Therefore, tuning the electronic properties of silicene by using chemical functionalization methods such as hydrogenation, halogenation or oxidation has been a focus of interest in silicene research. In this paper, we review the recent studies on the structural, electronic, optical and mechanical proper- ties of silicene-derivative structures. Since these derivatives have various band gap energies, they are promising candidates for the next generation of electronic and optoelectronic device applications.
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Submitted 10 August, 2016;
originally announced August 2016.
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Single Layer PbI2 : Hydrogenation-driven Reconstructions
Authors:
C. Bacaksiz,
H. Sahin
Abstract:
By performing density functional theory-based calculations, we investigate how hydrogen atom interacts with the surfaces of monolayer PbI2 and how one and two side hydrogenation modify its structural, electronic, and magnetic properties. Firstly, it was shown that T-phase of single layer PbI2 is energetically favorable than the H-phase. It is found that hydrogenation of its surfaces is possible th…
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By performing density functional theory-based calculations, we investigate how hydrogen atom interacts with the surfaces of monolayer PbI2 and how one and two side hydrogenation modify its structural, electronic, and magnetic properties. Firstly, it was shown that T-phase of single layer PbI2 is energetically favorable than the H-phase. It is found that hydrogenation of its surfaces is possible through the adsorption of each hydrogen on iodine sites. While H atoms do not form a particular bonding-type at low concentration, by increasing the number of hydrogenated I-sites well-ordered hydrogen patterns are formed on PbI2 matrix. In addition, we found that for one-side hydrogenation, the structure forms a (2x1) Jahn-Teller type distorted structure and band gap is dramatically reduced compared to hydrogen-free single layer PbI2 . Moreover, in the case of full-hydrogenation, the structure also possesses another (2x2) reconstruction with reduction in the band gap. Easy-tunable electronic and structural properties of single layer PbI2 by hydrogenation reveal its potential use in nanoscale semiconducting device applications.
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Submitted 21 July, 2016;
originally announced July 2016.
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Computing Optical Properties of Ultra-thin Crystals
Authors:
H. Sahin,
E. Torun,
C. Bacaksiz,
S. Horzum,
J. Kang,
R. T. Senger,
F. M. Peeters
Abstract:
An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2, MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, graphane). Ultra-thin crystals are atomically-thick layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in t…
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An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2, MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, graphane). Ultra-thin crystals are atomically-thick layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in the synthesis of few-atom-thick crystal structures, which are thought to be the main building blocks of future nanotechnology, reliable theoretical predictions of their electronic, vibrational and optical properties are of great importance. Recent studies revealed the reliable predictive power of existing theoretical approaches based on density functional theory (DFT).
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Submitted 29 February, 2016;
originally announced February 2016.
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Bilayer SnS$_{2}$: Easy-tunable Stacking Sequence by Charging and Loading Pressure
Authors:
C. Bacaksiz,
S. Cahangirov,
A. Rubio,
R. T. Senger,
F. M. Peeters,
H. Sahin
Abstract:
Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the inter…
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Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS$_{2}$ is weaker than that of typical transition-metal dichalcogenides (TMDs) so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. Possible signature of the stacking order in SnS$_{2}$ bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS$_{2}$. It is found that (i) the electric field increases the coupling between the layers at its prefered stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E-field and under sufficient E-field, the bilayer SnS$_{2}$ can become semi-metal, (iii) the most favorable stacking order can be switched by charging and (iv) a loading pressure exceeding 3 GPa changes the stacking order. E-field tunable bandgap and easy-tunable stacking sequence of SnS$_{2}$ layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.
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Submitted 4 February, 2016;
originally announced February 2016.
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Hexagonal AlN: Dimensional-Crossover-Driven Bandgap Transition
Authors:
C. Bacaksiz,
H. Sahin,
H. D. Ozaydin,
S. Horzum,
R. T. Senger,
F. M. Peeters
Abstract:
Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-bandgap semiconductor. Calcu…
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Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-bandgap semiconductor. Calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1 which are observable by Raman measurements. In addition, single layer h-AlN is an indirect-bandgap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA' type stacking is found to be the most favorable one and interlayer interaction is strong. While N-layered h-AlN is an indirect bandgap semiconductor for N=1-10, we predict that thicker structures (N>10) have a direct-bandgap at the Gamma-point. The number-of-layer-dependent bandgap transitions in h-AlN is interesting in that it is significantly different from the indirect-to- direct crossover obtained in the transition metal dichalcogenides.
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Submitted 20 February, 2015;
originally announced February 2015.