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An antiferromagnetic diode effect in even-layered MnBi2Te4
Authors:
Anyuan Gao,
Shao-Wen Chen,
Barun Ghosh,
Jian-Xiang Qiu,
Yu-Fei Liu,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Damien Bérubé,
Thao Dinh,
Houchen Li,
Christian Tzschaschel,
Seunghyun Park,
Tianye Huang,
Shang-Wei Lien,
Zhe Sun,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Amir Yacoby
, et al. (4 additional authors not shown)
Abstract:
In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu…
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In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.
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Submitted 24 June, 2024;
originally announced June 2024.
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Nonlinear optical diode effect in a magnetic Weyl semimetal
Authors:
Christian Tzschaschel,
Jian-Xiang Qiu,
Xue-Jian Gao,
Hou-Chen Li,
Chunyu Guo,
Hung-Yu Yang,
Cheng-** Zhang,
Ying-Ming Xie,
Yu-Fei Liu,
Anyuan Gao,
Damien Bérubé,
Thao Dinh,
Sheng-Chin Ho,
Yuqiang Fang,
Fuqiang Huang,
Johanna Nordlander,
Qiong Ma,
Fazel Tafti,
Philip J. W. Moll,
Kam Tuen Law,
Su-Yang Xu
Abstract:
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta…
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Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Submitted 8 April, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Anisotropic multiband superconductivity in 2M-WS$_{2}$ probed by controlled disorder
Authors:
Sunil Ghimire,
Kamal R. Joshi,
Marcin Konczykowski,
Romain Grasset,
Amlan Datta,
Makariy A. Tanatar,
Damien Berube,
Su-Yang Xu,
Yuqiang Fang,
Fuqiang Huang,
Peter P. Orth,
Mathias S. Scheurer,
Ruslan Prozorov
Abstract:
The intrinsically superconducting Dirac semimetal 2M-WS$_{2}$ is a promising candidate to realize proximity-induced topological superconductivity in its protected surface states. A precise characterization of the bulk superconducting state is essential for understanding the nature of surface superconductivity in the system. Here, we perform a detailed experimental study of the temperature and nonm…
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The intrinsically superconducting Dirac semimetal 2M-WS$_{2}$ is a promising candidate to realize proximity-induced topological superconductivity in its protected surface states. A precise characterization of the bulk superconducting state is essential for understanding the nature of surface superconductivity in the system. Here, we perform a detailed experimental study of the temperature and nonmagnetic disorder dependence of the London penetration depth $λ$, the upper critical field $H_{c2}$, and the superconducting transition temperature $T_c$ in 2M-WS$_{2}$. We observe a power-law dependence $λ(T) - λ(0) \propto T^{3}$ at temperatures below $0.35~T_c$, which is remarkably different from the expected exponential attenuation of a fully gapped isotropic $s$-wave superconductor. We then probe the effect of controlled nonmagnetic disorder induced by 2.5 MeV electron irradiation at various doses and find a significant $T_c$ suppression rate. Together with the observed increase of the slope $dH_{c2}/dT|_{T=T_c}$ with irradiation, our results reveal a strongly anisotropic $s^{++}$ multiband superconducting state that takes the same sign on different Fermi sheets. Our results have direct consequences for the expected proximity-induced superconductivity of the topological surface states.
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Submitted 27 July, 2023;
originally announced July 2023.
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Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
Authors:
Anyuan Gao,
Yu-Fei Liu,
Jian-Xiang Qiu,
Barun Ghosh,
Thaís V. Trevisan,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Hung-Ju Tien,
Shao-Wen Chen,
Mengqi Huang,
Damien Bérubé,
Houchen Li,
Christian Tzschaschel,
Thao Dinh,
Zhe Sun,
Sheng-Chin Ho,
Shang-Wei Lien,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hsin Lin,
Tay-Rong Chang,
Chunhui Rita Du
, et al. (6 additional authors not shown)
Abstract:
Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma…
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Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.
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Submitted 23 July, 2023; v1 submitted 15 June, 2023;
originally announced June 2023.
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Electronic ratchet effect in a moiré system: signatures of excitonic ferroelectricity
Authors:
Zhiren Zheng,
Xueqiao Wang,
Ziyan Zhu,
Stephen Carr,
Trithep Devakul,
Sergio de la Barrera,
Nisarga Paul,
Zumeng Huang,
Anyuan Gao,
Yang Zhang,
Damien Bérubé,
Kathryn Natasha Evancho,
Kenji Watanabe,
Takashi Taniguchi,
Liang Fu,
Yao Wang,
Su-Yang Xu,
Efthimios Kaxiras,
Pablo Jarillo-Herrero,
Qiong Ma
Abstract:
Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the disco…
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Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moiré heterostructure. Our engineered layer-asymmetric moiré potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices.
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Submitted 6 June, 2023;
originally announced June 2023.
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Axion optical induction of antiferromagnetic order
Authors:
Jian-Xiang Qiu,
Christian Tzschaschel,
Junyeong Ahn,
Anyuan Gao,
Houchen Li,
Xin-Yue Zhang,
Barun Ghosh,
Chaowei Hu,
Yu-Xuan Wang,
Yu-Fei Liu,
Damien Bérubé,
Thao Dinh,
Zhenhao Gong,
Shang-Wei Lien,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hai-Zhou Lu,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Brian B. Zhou,
Qiong Ma
, et al. (3 additional authors not shown)
Abstract:
Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics…
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Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states.
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Submitted 9 March, 2023;
originally announced March 2023.
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Layer Hall effect in a 2D topological Axion antiferromagnet
Authors:
Anyuan Gao,
Yu-Fei Liu,
Chaowei Hu,
Jian-Xiang Qiu,
Christian Tzschaschel,
Barun Ghosh,
Sheng-Chin Ho,
Damien Bérubé,
Rui Chen,
Haipeng Sun,
Zhaowei Zhang,
Xin-Yue Zhang,
Yu-Xuan Wang,
Naizhou Wang,
Zumeng Huang,
Claudia Felser,
Amit Agarwal,
Thomas Ding,
Hung-Ju Tien,
Austin Akey,
Jules Gardener,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
Kenneth S. Burch
, et al. (11 additional authors not shown)
Abstract:
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level…
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While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.
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Submitted 21 July, 2021;
originally announced July 2021.
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Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers
Authors:
Jiho Sung,
You Zhou,
Giovanni Scuri,
Viktor Zólyomi,
Trond I. Andersen,
Hyobin Yoo,
Dominik S. Wild,
Andrew Y. Joe,
Ryan J. Gelly,
Hoseok Heo,
Damien Bérubé,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail D. Lukin,
Philip Kim,
Vladimir I. Fal'ko,
Hongkun Park
Abstract:
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and supercondu…
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Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.
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Submitted 4 January, 2020;
originally announced January 2020.
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Electrically tunable valley dynamics in twisted WSe$_2$/WSe$_2$ bilayers
Authors:
Giovanni Scuri,
Trond I. Andersen,
You Zhou,
Dominik S. Wild,
Jiho Sung,
Ryan J. Gelly,
Damien Bérubé,
Hoseok Heo,
Linbo Shao,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Marko Lončar,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in…
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The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe$_2$/WSe$_2$ bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic do**, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
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Submitted 24 December, 2019;
originally announced December 2019.
