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Thermal Conductivity of Double Polymorph Ga2O3 Structures
Authors:
Azat Abdullaev,
Kairolla Sekerbayev,
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Vinay S. Chauhan,
Zhandos Utegulov,
Andrej Kuznetsov
Abstract:
Recently discovered double gamma/beta (γ/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of materials, in contrast to that in conventional heterostructures. In this work, for the first time, we investigate thermal transport in such homo-interface structures as an…
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Recently discovered double gamma/beta (γ/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of materials, in contrast to that in conventional heterostructures. In this work, for the first time, we investigate thermal transport in such homo-interface structures as an example of their physical properties. Specifically, the cross-plane thermal conductivity (k) was measured by femtosecond laser-based time-domain thermoreflectance with MHz modulation rates, effectively obtaining depth profiles of the thermal conductivity across the γ/\b{eta}-Ga2O3 structures. In this way, the thermal conductivity of γ-Ga2O3 k=1.84÷2.11 W m-1K-1 was found to be independent of the initial \b{eta}-substrates orientations, in accordance with the cubic spinel structure of the γ-phase and consistently with the molecular dynamics simulation data. In its turn, the thermal conductivity of monoclinic \b{eta}-Ga2O3 showed a distinct anisotropy, with values ranging from 10 W m-1K-1 for [201] to 20 Wm-1K-1 for [010] orientations. Thus, for double γ/\b{eta} Ga2O3 polymorph structures formed on [010] \b{eta}-substrates, there is an order of magnitude difference in thermal conductivity across the γ/\b{eta} interface, which potentially can be exploited in thermal energy conversion applications.
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Submitted 6 June, 2024;
originally announced June 2024.
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Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing
Authors:
Alexander Azarov,
Augustinas Galeckas,
Ildikó Cora,
Zsolt Fogarassy,
Vishnukanthan Venkatachalapathy,
Eduard Monakhov,
Andrej Kuznetsov
Abstract:
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta) substrate were fabricated by disorder-induced ordering, known to be a practical way to stack these polymorphs together. Such bilayer structures were annealed to invest…
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Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta) substrate were fabricated by disorder-induced ordering, known to be a practical way to stack these polymorphs together. Such bilayer structures were annealed to investigate the optical properties and phase transformations. Specifically, photoluminescence and diffuse reflectance spectroscopies were combined with transmission electron microscopy, Rutherford backscattering/channeling spectrometry and x-ray diffraction to monitor the evolutions. As a result we observe a two-stage annealing kinetics in gamma/beta Ga2O3 bilayers associated with the epitaxial gamma-to-beta regrowth at the interface at temperatures below 700 °C and a non-planar gamma-to-beta phase transformation starting at higher temperatures. Thus, the present data enhance understanding of the polymorphism in Ga2O3, interconnecting the phase transformation kinetics with the evolution of the optical properties.
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Submitted 30 May, 2024;
originally announced May 2024.
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Self-assembling of multilayered polymorphs with ion beams
Authors:
Alexander Azarov,
Cristian Radu,
Augustinas Galeckas,
Ionel Florinel Mercioniu,
Adrian Cernescu,
Vishnukanthan Venkatachalapathy,
Edouard Monakhov,
Flyura Djurabekova,
Corneliu Ghica,
Junlei Zhao,
Andrej Kuznetsov
Abstract:
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallizatio…
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Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; e.g. opting for step-like changes of temperature and/or pressure correlated with switching from one polymorph to another during synthesis is tricky, since it may cause degradation of the structural quality. In the present work, applying the disorder-induced ordering approach we fabricated such multilayered polymorph structures using ion beams. We show that during ion irradiation of gallium oxide, the dynamic annealing of disorder may be tuned towards self-assembling of several polymorph interfaces, consistently with theoretical modelling. Specifically, we demonstrated multilayers with two polymorph interface repetitions obtained in one ion beam assisted fabrication step. Importantly, single crystal structure of the polymorphs was maintained in between interfaces exhibiting repeatable crystallographic relationships, correlating with optical cross-sectional maps. This data paves the way for enhancing functionalities in materials with not previously thought capabilities of ion beam technology.
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Submitted 30 April, 2024;
originally announced April 2024.
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Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide
Authors:
Junlei Zhao,
Javier García Fernández,
Alexander Azarov,
Ru He,
Øystein Prytz,
Kai Nordlund,
Mengyuan Hua,
Flyura Djurabekova,
Andrej Kuznetsov
Abstract:
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this…
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Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this Letter, we focused on such crystallization instead of amorphization in collision cascades in gallium oxide (\ce{Ga2O3}). We determined the disorder threshold for irreversible $β$-to-$γ$ polymorph transition and explained why it results in elevating energy to that of the $γ$-polymorph, which exhibits the highest polymorph energy in the system below the amorphous state. Specifically, we demonstrate that upon reaching the disorder transition threshold, the \ce{Ga}-sublattice kinetically favors transitioning to the $γ$-like configuration, requiring significantly less migration for \ce{Ga} atoms to reach the lattice sites during post-cascade processes. As such, our data provide a consistent explanation of this remarkable phenomenon and can serve as a toolbox for predictive multi-polymorph fabrication.
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Submitted 7 March, 2024; v1 submitted 15 January, 2024;
originally announced January 2024.
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Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
Authors:
H. Arslan,
I. Aulika,
A. Sarakovskis,
L. Bikse,
M. Zubkins,
A. Azarov,
J. Gabrusenoks,
J. Purans
Abstract:
An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition…
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An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition region between β-Y2O3 and α-Y2O3, and accompanied by the crystalline Y2O3. Resulting from either the low energy separation between 4d and 5s orbitals and/or different spin states of the corresponding orbitals' sublevels, the stability of monoxide is most presumably self-limited by the size of the crystal in thermodynamic terms. This behavior develops a distortion in the structure of the crystal compared to the metal oxide cubic structure and it also effectuates the arrangement in nanocrystalline/amorphous phase. In addition to this, spectroscopic ellipsometry denotes that the semiconducting yttrium oxide has the dominant, mostly amorphous, formation character over crystalline Y2O3. Our purpose, by means of the current findings, is to advance the understanding of formation kinetics/conditions of yttrium with an unusual valency (2+).
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Submitted 11 May, 2023;
originally announced May 2023.
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High versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatin
Authors:
A. Zaborowska,
Ł. Kurpaska,
E. Wyszkowska,
A. Azarov,
M. Turek,
A. Kosińska,
M. Frelek-Kozak,
J. Jagielski
Abstract:
It is well known that ion irradiation can be successfully used to reproduce microstructural features triggered by neutron irradiation. Even though the irradiation process brings many benefits, it is also associated with several drawbacks. For example, the penetration depth of the ion in the material is very limited. This is particularly important for energies below MeV, ultimately reducing the num…
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It is well known that ion irradiation can be successfully used to reproduce microstructural features triggered by neutron irradiation. Even though the irradiation process brings many benefits, it is also associated with several drawbacks. For example, the penetration depth of the ion in the material is very limited. This is particularly important for energies below MeV, ultimately reducing the number of available irradiation facilities. In addition to that, extracting information exclusively from the modified volume may be challenging. Therefore, extreme caution must be taken when interpreting obtained data. Our work aims to compare the findings of nanomechanical studies already conducted separately on thin amorphous ceramic coatings irradiated with ions of different energies, hence layers of different thicknesses. In this work, we show that in some instances, the 10% rule may be obeyed. In order to prove our finding, we compared results obtained for ion irradiated (with two energies: 0.25 and 1.2 MeV up to 25dpa) alumina coating system. Mechanical properties of pristine and ion-irradiated specimens were studied by nanoindentation technique. Interestingly, the qualitative relationship between nanohardness and irradiation damage level is very similar, regardless of the energy used. The presented work proves that for some materials (e.g., hard coatings), the qualitative assessment of the mechanical changes using nanoindentation might be feasible even for shallow implantation depths.
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Submitted 24 April, 2023;
originally announced April 2023.
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Absolute radiation tolerance of amorphous alumina coatings at room temperature
Authors:
A. Zaborowska,
Ł. Kurpaska,
M. Clozel,
E. J. Olivier,
J. H. O'Connell,
M. Vanazzi,
F. Di Fonzo,
A. Azarov,
I. Jóźwik,
M. Frelek-Kozak,
R. Diduszko,
J. H. Neethling,
J. Jagielski
Abstract:
In this study structural and mechanical properties of a 1 um thick Al2O3 coating, deposited on 316L stainless steel by Pulsed Laser Deposition (PLD), subjected to high energy ion irradiation were assessed. Mechanical properties of pristine and ion-modified specimens were investigated using the nanoindentation technique. A comprehensive characterization combining Transmission Electron Microscopy an…
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In this study structural and mechanical properties of a 1 um thick Al2O3 coating, deposited on 316L stainless steel by Pulsed Laser Deposition (PLD), subjected to high energy ion irradiation were assessed. Mechanical properties of pristine and ion-modified specimens were investigated using the nanoindentation technique. A comprehensive characterization combining Transmission Electron Microscopy and Grazing-Incidence X-ray Diffraction provided deep insight into the structure of the tested material at the nano- and micro- scale. Variation in the local atomic ordering of the irradiated zone at different doses was investigated using a reduced distribution function analysis obtained from electron diffraction data. Findings from nanoindentation measurements revealed a slight reduction in hardness of all irradiated layers. At the same time TEM examination indicated that the irradiated layer remained amorphous over the whole dpa range. No evidence of crystallization, void formation or element segregation was observed up to the highest implanted dose. Reported mechanical and structural findings were critically compared with each other pointing to the conclusion that under given irradiation conditions, over the whole range of doses used, alumina coatings exhibit excellent radiation resistance. Obtained data strongly suggest that investigated material may be considered as a promising candidate for next-generation nuclear reactors, especially LFR-type, where high corrosion protection is one of the highest prerogatives to be met.
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Submitted 24 April, 2023;
originally announced April 2023.
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Universal radiation tolerant semiconductor
Authors:
Alexander Azarov,
Javier García Fernández,
Junlei Zhao,
Flyura Djurabekova,
Huan He,
Ru He,
Øystein Prytz,
Lasse Vines,
Umutcan Bektas,
Paul Chekhonin,
Nico Klingner,
Gregor Hlawacek,
Andrej Kuznetsov
Abstract:
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci…
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Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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Submitted 14 August, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Interplay of the disorder and strain in gallium oxide
Authors:
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Platon Karaseov,
Andrei Titov,
Konstantin Karabeshkin,
Andrei Struchkov,
Andrej Kuznetsov
Abstract:
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic and cl…
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Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, x-ray diffraction and theoretical calculations show that the disorder accumulation in \b{eta}-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in \b{eta}-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.
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Submitted 13 September, 2022; v1 submitted 28 April, 2022;
originally announced April 2022.
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Disorder-induced ordering in gallium oxide polymorphs
Authors:
Alexander Azarov,
Calliope Bazioti,
Vishnukanthan Venkatachalapathy,
Ponniah Vajeeston,
Edouard Monakhov,
Andrej Kuznetsov
Abstract:
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization…
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Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of a lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga2O3 and, potentially, for similar polymorphic families in other materials.
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Submitted 7 January, 2022; v1 submitted 1 September, 2021;
originally announced September 2021.
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Boron-do** of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Authors:
Patricia Almeida Carvalho,
Annett Thørgesen,
Quanbao Ma,
Daniel Nielsen Wright,
Spyros Diplas,
Augustinas Galeckas,
Alexander Azarov,
Valdas Jokubavicius,
Jianwu Sun,
Mikael Syväjärvi,
Bengt Gunnar Svensson,
Ole Martin Løvvik
Abstract:
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission…
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Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.
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Submitted 10 December, 2018; v1 submitted 17 April, 2018;
originally announced April 2018.
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GaZn-VZn acceptor complex defect in Ga-doped ZnO
Authors:
Aihua Tang,
Zengxia Mei,
Yaonan Hou,
Lishu Liu,
Vishnukanthan Venkatachalapathy,
Alexander Azarov,
Andrej Kuznetsov,
Xiaolong Du
Abstract:
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth…
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Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth conditions. The secondary ion mass spectrometry and temperature-dependent Hall-effect measurements reveal that a high density of controllable (GaZn-VZn)- is the predominant compensating defect in Ga-doped ZnO. The binding energy of this complex defect obtained from zinc self-diffusion experiments (~0.78 eV) well matches the electrical activation energy derived from the temperature-dependent electrical measurements (~0.82 eV). The compensation ratios were quantitatively calculated by energetic analysis and scattering process to further validate the compensation effect of (GaZn-VZn)- complex in Ga-doped ZnO. Meanwhile, its energy level structure was suggested based on the photoluminescence spectra, and the lifetime was achieved from the time-resolved photoluminescence measurements. The electron transitions between the (GaZn-VZn)- complex defect levels emit the light at ~650 nm with a lifetime of 10-20 nanoseconds. These findings may greatly pave the way towards novel complex defects-derived optical applications.
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Submitted 22 September, 2017;
originally announced September 2017.
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Oxygen vacancies: The origin of n-type conductivity in ZnO
Authors:
Lishu Liu,
Zengxia Mei,
Aihua Tang,
Alexander Azarov,
Andrej Kuznetsov,
Qi-Kun Xue,
Xiaolong Du
Abstract:
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffu…
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Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately-controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n-type conductivity as well as the non-stoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.
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Submitted 17 June, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Authors:
Nicola Dotti,
Francesco Sarti,
Sergio Bietti,
Alexander Azarov,
Andrej Kuznetsov,
Francesco Biccari,
Anna Vinattieri,
Stefano Sanguinetti,
Marco Abbarchi,
Massimo Gurioli
Abstract:
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum e…
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We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X+ from positive to negative values (from ~+5 meV up to ~-7 meV covering about ~ 70 meV of the emission energy) with increasing quantum confinement. These light emitters exhibiting energy-degenerate X and XX energy levels at ~1.855 eV (680 nm) are a promising resource for the generation of entangled photons in the time-reordering scheme on a silicon platform.
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Submitted 23 March, 2015; v1 submitted 15 December, 2014;
originally announced December 2014.
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Fluorine do**: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Authors:
Lishu Liu,
Zengxia Mei,
Yaonan Hou,
Huili Liang,
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Andrej Kuznetsov,
Xiaolong Du
Abstract:
N-type do** of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine do** via radio-frequency plasma assisted molecular beam epitaxi…
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N-type do** of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine do** via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0E19 F/cm3.The dramatically increased carrier concentration (2.85E17 cm-3 vs ~1014 cm-3) and decreased resistivity (129 ohm.cm vs ~10E6 ohm cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F do**. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89E9 cm Hz1/2/W to 3.58eE10 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F do** serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.
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Submitted 16 June, 2016; v1 submitted 19 September, 2014;
originally announced September 2014.
